JPH0664343B2 - Resin composition for resist - Google Patents

Resin composition for resist

Info

Publication number
JPH0664343B2
JPH0664343B2 JP60049235A JP4923585A JPH0664343B2 JP H0664343 B2 JPH0664343 B2 JP H0664343B2 JP 60049235 A JP60049235 A JP 60049235A JP 4923585 A JP4923585 A JP 4923585A JP H0664343 B2 JPH0664343 B2 JP H0664343B2
Authority
JP
Japan
Prior art keywords
polymer
unit
diisopropenylbenzene
resist
halogenoisopropenylcumene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60049235A
Other languages
Japanese (ja)
Other versions
JPS61209436A (en
Inventor
浅沼  正
Original Assignee
三井東圧化学株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三井東圧化学株式会社 filed Critical 三井東圧化学株式会社
Priority to JP60049235A priority Critical patent/JPH0664343B2/en
Publication of JPS61209436A publication Critical patent/JPS61209436A/en
Publication of JPH0664343B2 publication Critical patent/JPH0664343B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は紫外線、X線、γ線或は電子線などの照射によ
って架橋し、溶剤に不溶の重合体となるネガタイプレジ
スト用として好適な樹脂組成物に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention is a resin suitable for a negative type resist which is crosslinked by irradiation with ultraviolet rays, X-rays, γ-rays or electron beams to become a polymer insoluble in a solvent. It relates to a composition.

〔従来の技術〕[Conventional technology]

レジスト用の樹脂組成物としては多くのものが知られて
おり、アクリル酸系の重合体、フェノール系の重合体、
スチレン系の重合体などからなる樹脂組成物が半導体デ
ィバイス製造用などの用途で利用されている。
Many are known as resin compositions for resists, acrylic acid-based polymers, phenol-based polymers,
A resin composition composed of a styrene-based polymer or the like is used in applications such as manufacturing of semiconductor devices.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

半導体ディバイスの高集積化などによりレジスト用の樹
脂組成物に対する高感度、高解像力等の高機能化の要望
が極めて強く、新たな優れた特性を有するレジスト用の
樹脂組成物の開発が望まれている。
Due to high integration of semiconductor devices, there is a strong demand for high sensitivity, high resolution and other functions for resin compositions for resists, and development of resin compositions for resists with new excellent properties is desired. There is.

〔問題点を解決するための手段〕[Means for solving problems]

本発明者は、上述の新たな高機能のレジスト用の樹脂組
成物の開発について鋭意検討し、本発明を完成した。
The present inventor earnestly studied the development of the above new resin composition for a high-performance resist, and completed the present invention.

即ち、本発明は、(1)一般式(I) (式中、Xはハロゲン原子) で示されるα−ハロゲノイソプロペニルクメン単位を有
する重合体と (2)一般式(II) で表わされるジイソプロペニルベンゼン単位を有する重
合体とを含有するレジスト用樹脂組成物である。
That is, the present invention provides (1) general formula (I) (Wherein, X is a halogen atom), and a polymer having an α-halogenoisopropenylcumene unit represented by the formula (2) and the general formula (II) And a polymer having a diisopropenylbenzene unit represented by the following.

本発明において、上記α−ハロゲノイソプロペニルクメ
ン単位とジイソプロペニルベンゼン単位は必ずしも別々
のポリマー鎖中に存在する必要はなく、同一のポリマー
鎖中にα−ハロゲノイソプロペニルクメン単位とジイソ
プロペニルベンゼン単位が存在しても良い。
In the present invention, the α-halogenoisopropenylcumene unit and the diisopropenylbenzene unit do not necessarily have to be present in different polymer chains, and the α-halogenoisopropenylcumene unit and the diisopropenylbenzene unit may be present in the same polymer chain. Units may exist.

本発明においては、重合体中の全単量体単位に対するα
−ハロゲノイソプロペニルクメン単位の存在比率が0.02
以上であることが好ましく、又、α−ハロゲノイソプロ
ペニルクメン単位とジイソプロペニルベンゼン単位の和
が0.05以上であることが、レジスト用に用いた時の感度
の上で好ましく、照射により生じたゲルの耐久性の上か
らも好ましい。
In the present invention, α with respect to all monomer units in the polymer
-Halogenoisopropenylcumene unit abundance ratio of 0.02
The above is preferable, and the sum of α-halogenoisopropenylcumene unit and diisopropenylbenzene unit is preferably 0.05 or more in terms of sensitivity when used for a resist, and the gel produced by irradiation is preferable. It is also preferable from the viewpoint of durability.

α−ハロゲノイソプロペニルクメン単位とジイソプロペ
ニルベンゼン単位の比率については好ましくは10/90〜
90/10である。10/90より小さいと感度の上から好まし
くなく、90/10以上では、架橋により生じたゲルの耐久
性から好ましくない。
The ratio of α-halogenoisopropenylcumene units to diisopropenylbenzene units is preferably 10/90 to
90/10. If it is less than 10/90, it is not preferable in terms of sensitivity, and if it is 90/10 or more, it is not preferable because of the durability of the gel produced by crosslinking.

本発明の組成物を構成する重合体の分子量については特
に制限はないが、塗膜の成形性などを考慮すれば1000以
上好ましくは10,000〜1,000,000である。又、基板への
密着性、塗膜の耐久性、感度の向上などを改良するた
め、これら重合体以外の添加剤を添加することもでき
る。
The molecular weight of the polymer constituting the composition of the present invention is not particularly limited, but is 1000 or more, preferably 10,000 to 1,000,000 in consideration of the moldability of the coating film. Further, in order to improve the adhesion to the substrate, the durability of the coating film, the improvement of sensitivity and the like, additives other than these polymers may be added.

本発明において、α−ハロゲノイソプロペニルクメン単
位は重合体連鎖を形成するイソプロペニル基に対してm
位又はp位にハロゲノプロパン基が結合した構造をして
おり、ハロゲン原子としてはフッ素、塩素、臭素、ヨウ
素が挙げられる。ジイソプロペニルベンゼン単位は重合
体連鎖を形成するイソプロペニル基に対してm位又はp
位にイソプロペニル基が結合した構造をしている。これ
らの単位量単位以外の単量体単位としては種々の構造の
ものが使用可能であるが、好ましくは芳香環を有する単
量体単位、即ちスチレン、α−メキルスチレン又は芳香
環にアルキル基、アルコキシ基、ハロゲン原子などの置
換基のついたスチレン誘導体が好ましい単量体単位とし
て挙げられる。
In the present invention, the α-halogenoisopropenylcumene unit is m relative to the isopropenyl group forming the polymer chain.
It has a structure in which a halogenopropane group is bonded to the position or p-position, and examples of the halogen atom include fluorine, chlorine, bromine and iodine. The diisopropenylbenzene unit is in the m-position or p-position to the isopropenyl group forming the polymer chain.
It has a structure in which an isopropenyl group is bonded to the position. As the monomer unit other than these unit amount units, those having various structures can be used, but preferably a monomer unit having an aromatic ring, that is, styrene, α-methylstyrene or an alkyl group or alkoxy group on the aromatic ring. A preferable monomer unit is a styrene derivative having a substituent such as a group or a halogen atom.

本発明の組成物を構成する重合体としては種々可能であ
るが、単量体として、α−ハロゲノイソプロペニルクメ
ン、ジイソプロペニルベンゼン及び/又は他の単量体を
用いて適当に組み合せて単独或いは共重合反応を行い、
α−ハロゲノイソプロペニルクメン単位含有重合体、ジ
イソプロペニルベンゼン単位含有重合体、或いは両者を
含有する重合体を得ることが可能である。又、上記ジイ
ソプロペニルベンゼン単位含有重合体をハロゲン化炭化
水素などの溶剤に溶解し、フッ化水素、塩化水素、臭化
水素、ヨウ化水素などのハロゲン化水素を一部のイソプ
ロペニル基或いは全部のイソプロペニル基がハロゲノプ
ロピル基になるまで導入することで、α−ハロゲノイソ
プロペニルクメン単位含有重合体或いはα−ハロゲノイ
ソプロペニルクメン単位とジイソプロペニルベンゼン単
位の両者を含有する重合体とすることもできる。ジイソ
プロペニルベンゼン単位の多い重合体を得る方法として
は例えば特開昭59-207905号に具体的方法が開示されて
いる。
Although various kinds of polymers can be used to form the composition of the present invention, α-halogenoisopropenylcumene, diisopropenylbenzene and / or another monomer is used as a monomer in an appropriate combination and used alone. Alternatively, a copolymerization reaction is performed,
It is possible to obtain an α-halogenoisopropenylcumene unit-containing polymer, a diisopropenylbenzene unit-containing polymer, or a polymer containing both of them. Further, the above-mentioned diisopropenylbenzene unit-containing polymer is dissolved in a solvent such as a halogenated hydrocarbon, and a hydrogen halide such as hydrogen fluoride, hydrogen chloride, hydrogen bromide or hydrogen iodide is partially converted to an isopropenyl group or By introducing all the isopropenyl groups until they become halogenopropyl groups, an α-halogenoisopropenylcumene unit-containing polymer or a polymer containing both α-halogenoisopropenylcumene units and diisopropenylbenzene units is obtained. You can also As a method for obtaining a polymer having a large number of diisopropenylbenzene units, a specific method is disclosed in, for example, JP-A-59-207905.

本発明においては上記方法で得られた重合体から必要に
応じ溶剤に不溶な部分を除去し、場合によっては前述の
基板との密着性、塗膜の耐久性、感度の向上剤などを加
え、そのままレジスト用樹脂組成物溶液としたり、溶媒
を除去して固体状の組成物とすることもできる。本発明
の組成物は通常は適当な溶剤に溶解して基板に塗布し、
乾燥して得られた塗膜に紫外線、X線、γ線、或いは電
子先などを照射することで照射部のみが架橋反応を起し
溶剤に不溶となるためネガタイプのレジスト用として使
用できる。
In the present invention, if necessary, the solvent-insoluble portion is removed from the polymer obtained by the above-mentioned method, and in some cases, the adhesion to the substrate described above, the durability of the coating film, and a sensitivity improver are added, The resin composition solution for resist may be used as it is, or the solvent may be removed to obtain a solid composition. The composition of the present invention is usually dissolved in a suitable solvent and applied to a substrate,
When the coating film obtained by drying is irradiated with ultraviolet rays, X-rays, γ-rays, or an electronic tip, only the irradiated part undergoes a crosslinking reaction and becomes insoluble in a solvent, and therefore it can be used for a negative type resist.

〔発明の効果〕〔The invention's effect〕

本発明の組成物は、紫外線、X線、γ線或いは電子線な
どの照射に対して高感度であり、レジスト用重合体とし
て極めて有用である。
The composition of the present invention has high sensitivity to irradiation with ultraviolet rays, X-rays, γ-rays, electron rays and the like, and is extremely useful as a resist polymer.

〔実施例〕〔Example〕

以下、実施例を挙げ本発明をさらに説明する。 Hereinafter, the present invention will be further described with reference to examples.

参考例1 200mlの丸底フラスコにベンゼン100ml、スチレン36ml、
ジイソプロペニルベンゼン(m体96%、残りはイソプロ
ペニルクメン)14ml、アゾビスイソブチロニトリル0.3g
を加え、70℃で14時間反応した後、反応混合物を1の
メタノールに投じて、共重合体を沈澱させた。乾燥後秤
量としたところ9.9gであった。プロトンNMRによってイ
ソプロペニル基の含量を測定したところ、ジイソプロペ
ニルベンゼン単位は18.6モル%であり、30℃トルエン溶
液の極限粘度数は0.39であった。これを重合体Aとす
る。
Reference example 1 100 ml benzene, 36 ml styrene in a 200 ml round bottom flask,
14 ml of diisopropenylbenzene (m-form 96%, the rest is isopropenylcumene), 0.3 g of azobisisobutyronitrile
Was added and the mixture was reacted at 70 ° C. for 14 hours, and then the reaction mixture was poured into 1 of methanol to precipitate the copolymer. After weighing, it was weighed and found to be 9.9 g. When the content of isopropenyl group was measured by proton NMR, the diisopropenylbenzene unit was 18.6 mol% and the intrinsic viscosity number of the toluene solution at 30 ° C. was 0.39. This is referred to as polymer A.

上記で得た重合体A5gを200mlのクロロホルムに溶解し、
塩化水素ガス2gを10分間かけて導入し、さらに30分間撹
拌した後窒素ガスを導入して未反応の塩化水素ガスを除
去し、反応液をろ過した後ろ液を真空乾燥して5.2gの重
合体Bを得た。元素分析及びプロトンNMRにより実質的
にイソプロペニル基はすべてクロルプロトン基に変って
いることを確認した。又、30℃トルエン溶液で測定した
極限粘度は0.34であった。
Polymer A5g obtained above was dissolved in 200 ml of chloroform,
Introduce 2 g of hydrogen chloride gas over 10 minutes, stir for another 30 minutes, then introduce nitrogen gas to remove unreacted hydrogen chloride gas, filter the reaction solution, and vacuum dry the solution to 5.2 g weight. Combined B was obtained. It was confirmed by elemental analysis and proton NMR that substantially all the isopropenyl groups were changed to chloro proton groups. The intrinsic viscosity measured with a toluene solution at 30 ° C. was 0.34.

塩化水素ガスの導入量を0.3gとした他は上述と同様の反
応を行つた。得られた重合体Cは元素分析及びプロトン
NMRによれば8.6モル%はクロルプロパン基に変ってお
り、又10モル%はイソプロペニル基のままであった。又
30℃トルエン溶液で測定した極限粘度は0.35であった。
The same reaction as described above was performed except that the amount of hydrogen chloride gas introduced was 0.3 g. The polymer C thus obtained was subjected to elemental analysis and protons.
According to NMR, 8.6 mol% was converted to a chloropropane group, and 10 mol% remained an isopropenyl group. or
The intrinsic viscosity measured with a toluene solution at 30 ° C was 0.35.

参考例2 200mlの丸底フラスコを用いトルエン60ml、α−メチル
スチレン34ml、ジイソプロペニルベンゼン(96wt%がm
−ジイソプロペニルベンゼン、残りはm−イソプロペニ
ルクメンである)16ml、ジグライム1mlを入れ、−10℃
でブチルリチウム(10wt%ヘキサン溶液)1.5mlを加
え、1時間反応し、次いで多量のメタノール中に投じろ
過乾燥して重合体D21.5gを得た。プロトンNMRによれば
ジイソプロペニル単位は28モル%であり、30℃トルエン
溶液の極限粘度数は0.42であった。
Reference Example 2 Using a 200 ml round bottom flask, 60 ml of toluene, 34 ml of α-methylstyrene and diisopropenylbenzene (96 wt% is m
-Diisopropenylbenzene, the rest is m-isopropenylcumene) 16ml, diglyme 1ml, -10 ℃
Butyllithium (10 wt% hexane solution) (1.5 ml) was added thereto, and the mixture was reacted for 1 hour. Then, the mixture was poured into a large amount of methanol, filtered and dried to obtain 21.5 g of Polymer D. According to proton NMR, the diisopropenyl unit content was 28 mol%, and the intrinsic viscosity number of the toluene solution at 30 ° C. was 0.42.

この重合体Dを用い、参考例1と同様にして完全にイソ
プロペニル基をクロロプロピル基に変えた重合体Eを得
た。この重合体Eの極限粘度数は0.40であった。
Using this polymer D, a polymer E in which the isopropenyl group was completely changed to a chloropropyl group was obtained in the same manner as in Reference Example 1. The intrinsic viscosity of this polymer E was 0.40.

実施例1〜5、参考例1〜3 重合体A〜Eを表1に示す量比で単独あるいは混合して
クロロホルムに溶解し、ガラス板に塗布し、乾燥して厚
み約2μmの塗膜を形成した。この塗膜の上に2mm間隔
のアルミ製の格子を置き、10cmの距離から300W水銀灯
(東芝製300H)で60分間光照射した。その後、この塗膜
をクロロホルムで処理し、光照射部の溶解性を調べた。
結果を表1に示す。
Examples 1 to 5 and Reference Examples 1 to 3 Polymers A to E were individually or mixed in the ratios shown in Table 1 and dissolved in chloroform, coated on a glass plate and dried to form a coating film having a thickness of about 2 μm. Formed. An aluminum grid with a 2 mm interval was placed on this coating film, and light was irradiated from a distance of 10 cm with a 300 W mercury lamp (Toshiba 300H) for 60 minutes. Then, this coating film was treated with chloroform and the solubility of the light-irradiated part was examined.
The results are shown in Table 1.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】(1)一般式I (式中、Xはハロゲン原子を示す。) で表わされるα−ハロゲノイソプロペニルクメン単位を
有する重合体と (2)一般式II で表わされるジイソプロペニルベンゼン単位を有する重
合体とを 含有するレジスト用樹脂組成物。
1. A general formula I: (Wherein X represents a halogen atom) and a polymer having an α-halogenoisopropenylcumene unit represented by the formula (2) and the general formula II A resin composition for resist containing a polymer having a diisopropenylbenzene unit represented by:
JP60049235A 1985-03-14 1985-03-14 Resin composition for resist Expired - Lifetime JPH0664343B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60049235A JPH0664343B2 (en) 1985-03-14 1985-03-14 Resin composition for resist

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60049235A JPH0664343B2 (en) 1985-03-14 1985-03-14 Resin composition for resist

Publications (2)

Publication Number Publication Date
JPS61209436A JPS61209436A (en) 1986-09-17
JPH0664343B2 true JPH0664343B2 (en) 1994-08-22

Family

ID=12825227

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60049235A Expired - Lifetime JPH0664343B2 (en) 1985-03-14 1985-03-14 Resin composition for resist

Country Status (1)

Country Link
JP (1) JPH0664343B2 (en)

Also Published As

Publication number Publication date
JPS61209436A (en) 1986-09-17

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