JPH0671027B2 - Semiconductor element mounting method - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for mounting a semiconductor device such as a microcomputer, a multi-electrode such as a gate array, or a narrow pitch LSI chip.

Conventional Technology Conventional technology will be described with reference to FIG.

First, as shown in FIG. 2A, a photocurable resin 23 is applied to the surface of the wiring board 21 made of glass having the conductor wiring 22.
The conductor wiring 22 is made of Cr-Au, Al, ITO, etc.
Is epoxy, acrylic, or the like. Next, as shown in FIG. 2B, an LSI chip having a protruding electrode 25 made of Al, Au or the like.
24 so that the protruding electrode 25 and the conductor wiring 22 match.
The photocurable resin 23 of 21 is installed in the coated area, and the LSI chip 24 is pressed by the pressing tool 26. At this time, the photocurable resin 23 is pushed out to the surroundings, and the protruding electrode 25 of the LSI chip 24 and the conductor wiring 22 are electrically contacted. Further, at this time, the LSI chip 24 is elastically deformed into a concave shape by the pressure. Next, ultraviolet rays 27 are irradiated from the back surface of the wiring board 21 to cure the photocurable resin 23. Next, as shown in FIG. 2C, the pressure tool 26 is released. At this time, the LSI chip 24 is fixed to the wiring board 21 while being elastically deformed into a concave shape.

Problems to be Solved by the Invention In the above-described conventional technique, the LSI chip is elastically deformed and fixed to the wiring substrate, and therefore has the following problems.

(1) Since the LSI chip is deformed, the characteristics of the element change and the yield is low.

(2) Since the LSI chip is constantly subjected to the force of peeling from the photocurable resin, peeling occurs in a high temperature and high humidity state, and reliability is low.

Means for Solving the Problems The present invention provides an LSI of a photo-curable resin when an LSI chip is pressed.
Only the area around the chip electrode is cured, then the pressure is released and LS
With the elastic deformation of the I-chip restored, the photo-curable resin in the uncured portion is cured.

That is, according to the present invention, the step of applying an insulating resin to the conductor wiring of the insulating substrate having the conductor wiring, the conductor wiring and the electrode of the semiconductor element are aligned, Is placed in a coated area and pressed, and a step of bringing the electrodes of the semiconductor element into contact with the conductor wiring; and the semiconductor element in a state of being pressed against the insulating substrate, the semiconductor element of the insulating resin Insulating the semiconductor element by curing only the periphery of the electrode and electrically connecting the electrode of the semiconductor element and the conductor wiring, and curing the uncured portion of the insulating resin after releasing the pressure. A method of mounting a semiconductor element, the method comprising the steps of: fixing an insulating resin to the conductor wiring of an insulating substrate having a conductor wiring; Is not said semiconductor device is placed in an area where the insulating resin is applied to the insulating substrate pressed, the step of contacting an electrode with the conductor wiring of the semiconductor element,
A step of electrically connecting the conductor wiring to the electrode of the semiconductor element by curing only the periphery of the electrode of the semiconductor element of the insulating resin in a state where the semiconductor element is pressed against the insulating substrate; After releasing the pressure, by a curing method different from the curing method of the insulating resin around the electrodes of the semiconductor element, the uncured portion of the insulating resin is cured to form the semiconductor element on the insulating substrate. A method for mounting a semiconductor element, which includes a step of fixing the semiconductor element.

Since the LSI chip can be fixed to the wiring board without deformation of the LSI chip, the characteristics of the semiconductor element are not deteriorated and the reliability is high.

Embodiment An embodiment of the present invention will be described with reference to FIG.

First, as shown in FIG. 1a, the conductor wiring 2 is made of glass.
And conductor wiring 2 of wiring board 1 having ultraviolet blocking film 8
Insulating resin 3 is applied to the region including. The thickness of the wiring board 1 is about 0.1 to 2.0 mm, and the conductor wiring 2 is made of Cr-Au, A
l, ITO, etc., and its thickness is about 0.1 to 1.0 μ. If the conductor wiring 2 is opaque, the ultraviolet blocking film 8 can be easily formed at the same time when the conductor wiring 2 is formed. When the conductor wiring 2 is transparent such as ITO, it is separately formed by vapor deposition, printing or the like. The insulating resin 3 is formed by a curing method such as photo-curing and room-temperature curing or photo-curing and heat curing, and its main component is epoxy, acrylic, urethane or the like. As a coating method, a dispenser, printing or the like is used. Further, although the insulating resin 3 is applied to the wiring board 2, it may be applied to the LSI chip 4 side mounted on the wiring board 1 later.

Next, as shown in FIG. 1b, the LSI chip 4 having the protruding electrode 5 made of Au or the like is coated with the insulating resin 3 of the wiring board 1 so that the protruding electrode 5 and the conductor wiring 2 are aligned with each other. Installed in the designated area. The thickness of the protruding electrode 5 is about 1 to 10 μm, and the size thereof is about 3 μ □ to 50 μ □.

Next, the LSI chip 1 is pressed by the pressing tool 6. At this time, the insulating resin 3 is pushed out to the surroundings, and the protruding electrodes 5 of the LSI chip 4 and the conductor wirings 2 electrically contact each other. At this time, the LSI chip 4 has a concave warp such that the center of the LSI chip 4 is the lowest. The amount of warpage is 1 for LSI chip 4
When it is 0 mm □, it is about several μm. Next, while the LSI chip 4 is being pressed, ultraviolet rays 7 are irradiated to cure the insulating resin 3. At this time, the insulating resin 3 located in the center of the LSI chip 4 is not cured by the ultraviolet blocking film 8 and the protruding electrode 5
The insulating resin 3 only around the area is cured. The curing time is
When the UV illuminance is 500 to 1000 mW / cm ₂ , it is about 0.5 to 1.0 seconds.

Next, as shown in FIG. 1c, the pressure tool 6 is released. At this time, the protruding electrodes 5 and the conductor wirings 2 of the LSI chip 1 are kept in electrical connection by the curing shrinkage force of the already cured insulating resin 3a around the protruding electrodes 5. Also, LS
Since the insulating resin 3b at the center of the I-chip 4 is uncured, L
The warpage of the LSI chip 4 generated when the SI chip 4 is pressed is eliminated, and the LSI chip 4 becomes flat. Next, as shown in FIG. 1D, the uncured insulating resin 3b is cured by heating or room temperature to fix the LSI chip 4 to the wiring board 1. In the case of heat curing, it is cured at 80 ° C to 150 ° C for 10 minutes to 30 minutes, and in the case of room temperature curing, it is cured in about 10 minutes to 3 hours.

Note that an electron beam blocking film may be used as the film 8 and the resin 3 may be cured by irradiation with an electron beam.

According to the present invention, when the LSI chip is pressed, that is, when the LSI chip is warped, the insulating resin around only the protruding electrodes of the LSI chip is cured to release the pressure on the LSI chip. However, since the entire insulating resin is cured with the warpage eliminated, the following effects are obtained.

(1) Since the LSI chip does not warp, the element characteristics do not change and the yield is high.

(2) High reliability because there is no stress on the insulating resin due to the stress of the LSI chip.

(3) The adhesive strength is very weak before the central portion of the LSI chip is hardened, and by performing an electrical inspection at this point, it becomes very easy to replace the LSI chip and the productivity at the time of multi-chip mounting is high.

[Brief description of drawings]

FIG. 1 is a sectional view of each step of a method according to an embodiment of the present invention, and FIG. 2 is a sectional view of each step of a conventional method. 1 ... Wiring board, 2 ... Conductor wiring, 3 ... Insulating resin,
4 ... LSI chip, 5 ... protruding electrode, 6 ... pressing tool, 7 ... UV, 8 ... UV blocking film.

Claims (3)

[Claims] 1. A step of applying an insulating resin to the conductor wiring of an insulating substrate having a conductor wiring, and aligning the conductor wiring with an electrode of a semiconductor element so that the semiconductor element is coated with the insulating resin of the insulating substrate. The step of placing in the applied area and applying pressure to bring the electrode of the semiconductor element into contact with the conductor wiring; and the step of applying the semiconductor element to the insulating substrate, the electrode of the semiconductor element of the insulating resin Of electrically connecting the electrodes of the semiconductor element to the conductor wiring by curing only the periphery of the semiconductor element, and after releasing the pressure, the uncured portion of the insulating resin is cured so that the semiconductor element is insulated. A method of mounting a semiconductor device, comprising the step of fixing to a substrate. 2. A step of applying an insulating resin to the conductor wiring of an insulating substrate having a conductor wiring, and a step of aligning the conductor wiring with an electrode of a semiconductor element so that the semiconductor element is coated with the insulating resin of the insulating substrate. The step of placing in the coated area and applying pressure to bring the electrode of the semiconductor element and the conductor wiring into contact with each other; and the step of applying pressure to the insulating substrate to the electrode of the semiconductor element of the insulating resin Different from the step of curing only the periphery to electrically connect the electrode of the semiconductor element and the conductor wiring, and the method of curing the insulating resin around the electrode of the semiconductor element after releasing the pressure. A method of mounting a semiconductor element, comprising the step of curing an uncured portion of the insulating resin by a curing method to fix the semiconductor element to the insulating substrate. 3. An insulating substrate having a conductor wiring facing an electrode of a semiconductor element on at least one main surface of a transparent insulating substrate, and a portion not facing the electrode of the semiconductor element in the semiconductor element mounting region, The method of mounting a semiconductor element according to claim 1 or 2, wherein a wiring board having a film that blocks ultraviolet rays or electron beams is used.