JPH067547B2 - Vapor phase growth equipment - Google Patents
Vapor phase growth equipmentInfo
- Publication number
- JPH067547B2 JPH067547B2 JP58103146A JP10314683A JPH067547B2 JP H067547 B2 JPH067547 B2 JP H067547B2 JP 58103146 A JP58103146 A JP 58103146A JP 10314683 A JP10314683 A JP 10314683A JP H067547 B2 JPH067547 B2 JP H067547B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- susceptor
- vapor phase
- phase growth
- foreign matter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 (a) 発明の技術分野 本発明は、気相成長装置に係り、特に、その構成に関
す。Description: (a) Technical Field of the Invention The present invention relates to a vapor phase growth apparatus, and more particularly to the configuration thereof.
(b) 技術の背景 半導体装置の主体をなす、半導体素子の製造において、
薄膜形成は重要な工程の一つであり、多結晶シリコン
（Si）・二酸化シリコン（SiO2）・リン珪酸ガラス〔PS
G（Phospho Silicate Glass）〕などは、ＣＶＤ法によ
って形成されている。(b) Background of technology In the manufacture of semiconductor elements, which are the main components of semiconductor devices,
Thin film formation is one of the important processes, and polycrystalline silicon (Si), silicon dioxide (SiO 2 ), phosphosilicate glass [PS
G (Phospho Silicate Glass)] and the like are formed by the CVD method.
これは、薄膜形成させるウエハを加熱しておき、例え
ば、モノシラン（SiH4）等の反応ガス、一種または数種
をそこへ当て、化学反応を利用して、薄膜を成長させる
方法で、気相成長装置を使用して、作業が行われる。This is a method of growing a thin film by heating a wafer on which a thin film is to be formed, applying a reaction gas such as monosilane (SiH 4 ), or one or several kinds thereof, and utilizing a chemical reaction to grow the thin film. Work is performed using a growth device.
半導体装置の高性能化のため、半導体素子内の回路集積
度が上がって来ており、これに伴い、形成される薄膜の
質の向上が必要になって、気相成長装置には、膜の均一
性、異物付着の低減、更には、生産性の向上等に向けて
の、改良が望まれている。The degree of circuit integration in semiconductor elements is increasing due to higher performance of semiconductor devices, and along with this, it is necessary to improve the quality of formed thin films. Improvements are desired for uniformity, reduction of foreign matter adhesion, and further improvement of productivity.
(c) 従来技術と問題点 第１図は従来の連続式気相成長装置の薄膜形成機構部構
成の一例を示した図で、１はウエハ、２はサセプタ、３
はコンベヤ、４はヒータ、５はデスパージョンヘッド、
６は反応ガスをそれぞれ示す。(c) Conventional Technology and Problems FIG. 1 shows an example of the structure of a thin film forming mechanism of a conventional continuous vapor phase growth apparatus. 1 is a wafer, 2 is a susceptor, 3
Is a conveyor, 4 is a heater, 5 is a dispersion head,
Reference numeral 6 denotes a reaction gas, respectively.
ウエハ１は、コンベヤ３に係止されたサセプタ２に載置
されて、図示右方向へ一定速度で搬送される。サセプタ
２の下側には、ヒータ４が設置されていて、ウエハ１
が、前記搬送過程において、ヒータ４により、サセプタ
２を介して所定の温度に加熱されたところで、上部に設
置されているデスパージョンヘッド５から吹き出す反応
ガス６に当たり、薄膜の披着面なるウエハ１の上表面に
薄膜が形成される。The wafer 1 is placed on the susceptor 2 locked by the conveyor 3 and is conveyed rightward in the drawing at a constant speed. A heater 4 is installed below the susceptor 2, and the wafer 1
However, in the transfer process, when heated to a predetermined temperature by the heater 4 through the susceptor 2, it hits the reaction gas 6 blown out from the dispersion head 5 installed on the upper part of the wafer 1 serving as a deposition surface of the thin film. A thin film is formed on the upper surface of the.
この構成の気相成長装置は、上記機構部分全体が筺体に
収納されているとはいえ、該筺体内に混入した塵埃、ま
た、サセプタ２の表面に形成された薄膜の剥離したもの
等が、該筺体内で浮遊落下して、ウエハ１の表面に異物
として付着し、前記形成される薄膜の品質を低下させる
欠点がある。In the vapor phase growth apparatus of this configuration, although the entire mechanical portion is housed in the housing, dust mixed in the housing, peeled thin film formed on the surface of the susceptor 2, and the like, It has a drawback that it floats and drops in the housing and adheres to the surface of the wafer 1 as a foreign matter, deteriorating the quality of the formed thin film.
(d) 発明の目的 本発明の目的は上記従来の欠点に鑑み、異物付着の少な
い薄膜を形成する、気相成長装置の構成を提供するにあ
る。(d) Object of the Invention In view of the above-mentioned conventional drawbacks, an object of the present invention is to provide a structure of a vapor phase growth apparatus for forming a thin film with less foreign matter adhesion.
(e) 発明の構成 上記目的は、被披着体の披着面が垂下方向を向いた状態
で、薄膜を形成させる薄膜形成機構と、該薄膜を形成し
た後に、前記披着面およびその周辺の、表面の異物を除
去する洗浄機構とを備える気相成長装置にする、本発明
の構成によって達成される。(e) Configuration of the invention The above-mentioned object is to form a thin film in a state where the wearing surface of the object to be worn is oriented in the hanging direction, and after forming the thin film, the wearing surface and its surroundings. This is achieved by the configuration of the present invention, which is a vapor phase growth apparatus including a cleaning mechanism for removing foreign matter on the surface.
薄膜面に付着する異物は、気相成長装置の筺体内に浮遊
していたものであり、この種の異物は、一般に、上方を
向いている面には付着し易いが、下方を向いている面に
は付着し難いため、前記披着面を下方向に向けることに
より、前記異物の付着は格段に減少する。The foreign matter adhering to the thin film surface was floating in the housing of the vapor phase growth apparatus. Generally, this kind of foreign matter tends to adhere to the surface facing upward, but faces downward. Since it is difficult for the foreign matter to adhere to the surface, by adhering the wearing surface downward, the adhesion of the foreign matter is significantly reduced.
また、薄膜形成後、引続いて行う洗浄は、放置後の洗浄
より、異物除去の効果が優れ、該薄膜の品質向上に寄与
するばかりでなく、更に、前記披着面の周辺も同時に洗
浄することにより、例えば、前記サセプタも洗浄される
ので、該サセプタから発生する異物も除去出来て、前記
異物付着の減少にも寄与出来る。In addition, the subsequent cleaning after the thin film is formed is more effective in removing foreign matters than the cleaning after being left, and not only contributes to improving the quality of the thin film, but also the periphery of the dressing surface is simultaneously cleaned. Thereby, for example, since the susceptor is also cleaned, the foreign matter generated from the susceptor can be removed and the adhesion of the foreign matter can be reduced.
(f) 発明の実施例 以下本発明の一実施例を図により説明する。全図を通じ
同一符号は同一対象物を示す。(f) Embodiment of the Invention An embodiment of the present invention will be described below with reference to the drawings. The same reference numerals denote the same objects throughout the drawings.
第２図は本発明の構成による連続式気相成長装置の一例
の構成図で、2aはサセプタ、3aはコンベヤ、７はブラシ
スクラバー、８はヒータ、９はウエハチャック機構、10
はウエハリリース機構、11はカセットをそれぞれ示す。FIG. 2 is a block diagram of an example of a continuous vapor phase growth apparatus according to the configuration of the present invention, in which 2a is a susceptor, 3a is a conveyor, 7 is a brush scrubber, 8 is a heater, 9 is a wafer chuck mechanism, and 10 is a wafer chuck mechanism.
Is a wafer release mechanism, and 11 is a cassette.
コンベヤ3aは、左右が円弧、上下が水平のリング状をな
し、反時計方向に一定速度で移動する。The conveyor 3a has a ring shape in which the left and right sides are arcs and the top and bottom sides are horizontal, and moves in a counterclockwise direction at a constant speed.
サセプタ2aは、コンベヤ3aに係止されていて、コンベヤ
3aの移動に追従するが、コンベヤ3aの上下の水平部分で
は、サセプタ2aの表面は、常に、所定の平面内にあるよ
うになっていて、また、サセプタ2aの、外側を向いてい
る表面には、その傾斜如何にかかわらず、移動離脱のな
いような、ウエハ１の支持機構を備えている。The susceptor 2a is locked to the conveyor 3a,
Although following the movement of 3a, in the upper and lower horizontal parts of the conveyor 3a, the surface of the susceptor 2a is always in a predetermined plane, and also on the surface of the susceptor 2a, which faces outward. Is provided with a support mechanism for the wafer 1 that does not move or separate regardless of its inclination.
この搬送機構の、下側水平部分に薄膜を形成する機構部
が、上側水平部分に洗浄機構部が配置され、更に、ウエ
ハの装着・離脱機構が設けられて、本連続式気相成長装
置がなっている。A mechanism for forming a thin film on the lower horizontal portion of the transfer mechanism, a cleaning mechanism on the upper horizontal portion, and a wafer mounting / demounting mechanism are provided for the continuous vapor phase growth apparatus. Has become.
薄膜形成の機構部では、ヒータ４は、サセプタ2aの裏面
側、即ち、サセプタ2aの上側にあり、デスパージョンヘ
ッド５は、反対に、サセプタ2aの下側で、反応ガス６を
上方に吹き出すように取付けられて、前記従来例の上下
を逆様にした形になっている。In the mechanism for forming a thin film, the heater 4 is on the back surface side of the susceptor 2a, that is, on the upper side of the susceptor 2a, and on the contrary, the diffusion head 5 blows the reaction gas 6 upward on the lower side of the susceptor 2a. It is attached to the above-mentioned conventional example and has a shape in which the top and bottom of the conventional example are reversed.
洗浄機構部は、ブラシスクラバー７と、ヒータ８でなっ
ており、共に、サセプタ2aの表面側、即ち、サセプタ2a
の上側にあり、ブラシスクラバー７・ヒータ８の順に、
サセプタ2aが通過するように、配置されている。ブラシ
スクラバー７の、ブラッシング部分の前では、洗浄液を
供給し、後では、水洗水を供給して洗浄し、その後に、
ヒータ８で乾燥して洗浄を完了させる。The cleaning mechanism is composed of a brush scrubber 7 and a heater 8, both of which are on the surface side of the susceptor 2a, that is, the susceptor 2a.
It is on the upper side of, and in the order of brush scrubber 7 and heater 8,
It is arranged so that the susceptor 2a passes through. Before the brushing portion of the brush scrubber 7, the cleaning liquid is supplied, and after that, the cleaning water is supplied to clean, and after that,
The heater 8 dries to complete the cleaning.
薄膜形成の機構部の前には、ウエハ１を、カセット11か
ら取り出し、サセプタ2aへ装着するウエハチャック機構
９が取付けられ、また、洗浄機構部の後には、ウエハ１
を、サセプタ2aから取り出し、カセット11へ収納するウ
エハリリース機構10が取付けられて、自動化が図られて
いる。A wafer chuck mechanism 9 for taking the wafer 1 out of the cassette 11 and mounting it on the susceptor 2a is attached in front of the thin film forming mechanism portion, and after the cleaning mechanism portion, the wafer 1 is attached.
A wafer release mechanism 10 for taking out the wafer from the susceptor 2a and storing it in the cassette 11 is attached for automation.
この構成による連続式気相成長装置では、薄膜形成の機
構は、従来と変わるところはないが、薄膜面での異物付
着の点では、以下のようになり、従来に比べて、大幅に
改良されている。In the continuous vapor phase growth apparatus with this configuration, the thin film formation mechanism is no different from the conventional one, but in terms of foreign matter adhesion on the thin film surface, it is as follows, which is a significant improvement over the conventional one. ing.
薄膜面に付着する異物は、気相成長装置の筺体内に浮遊
していたものであり、この種の異物は、一般に、上方を
向いている面には付着し易いが、下方を向いている面に
は付着し難いため、ウエハ１の薄膜披着面を下方向に向
けることにより、前記異物の付着は格段に減少する。The foreign matter adhering to the thin film surface was floating in the housing of the vapor phase growth apparatus. Generally, this kind of foreign matter tends to adhere to the surface facing upward, but faces downward. Since it is difficult for the foreign matter to adhere to the surface, the foreign matter is significantly reduced by directing the thin film deposition surface of the wafer 1 downward.
また、薄膜形成直後の洗浄は、放置後の洗浄より、異物
除去の効果が優れ、形成された薄膜の品質向上に寄与す
るばかりでなく、更に、サセプタ2aの表面も洗浄される
ので、サセプタ2aから発生する異物も除去出来て、異物
付着の減少にも寄与出来る。Further, the cleaning immediately after forming the thin film is more effective in removing foreign matters than the cleaning after being left, and not only contributes to improving the quality of the formed thin film, but also the surface of the susceptor 2a is cleaned, so that the susceptor 2a Foreign substances generated from the can also be removed, which can contribute to the reduction of foreign matter adhesion.
(g) 発明の効果 以上に説明したように、本発明による構成によれば、異
物付着の少ない薄膜を形成する、気相成長装置を提供す
ることが出来、形成される薄膜の品質向上を可能にさせ
る効果がある。(g) Effects of the Invention As described above, according to the configuration of the present invention, it is possible to provide a vapor phase growth apparatus that forms a thin film with less foreign matter attached, and it is possible to improve the quality of the formed thin film. It has the effect of
第１図は従来の連続式気相成長装置の薄膜形成機構部構
成の一例を示した図、第２図は本発明の構成による連続
式気相成長装置の一例の構成図である。 図面において、１はウエハ、２・2aはサセプタ、３・3a
はコンベヤ、４はヒータ、５はデスパージョンヘッド、
６は反応ガス、７はブラシスクラバー、８はヒータ、９
はウエハチャック機構、10はウエハリリース機構、11は
カセットをそれぞれ示す。FIG. 1 is a diagram showing an example of the configuration of a thin film forming mechanism portion of a conventional continuous vapor deposition apparatus, and FIG. 2 is a configuration diagram of an example of a continuous vapor deposition apparatus having the configuration of the present invention. In the drawing, 1 is a wafer, 2.2a is a susceptor, 3.3a
Is a conveyor, 4 is a heater, 5 is a dispersion head,
6 is a reaction gas, 7 is a brush scrubber, 8 is a heater, 9
Is a wafer chuck mechanism, 10 is a wafer release mechanism, and 11 is a cassette.
Claims (2)
着面に、薄膜を形成させる装置において、前記披着面が
垂下方向を向いた状態で、前記薄膜を形成させる薄膜形
成機構と、前記薄膜を形成した後に、前記披着面および
その周辺の、表面の異物を除去する洗浄機構とを備えた
ことを特徴とする気相成長装置。1. A device for forming a thin film on a dressing surface of an adherend by utilizing a chemical reaction of gas, wherein the thin film is formed with the dressing surface facing downward. A vapor deposition apparatus comprising: a forming mechanism; and a cleaning mechanism for removing foreign matter on the surface of the attachment surface and its periphery after forming the thin film.
配置され、前記被披着体が、連続的に順次該両機構に搬
送されることを特徴とする、特許請求の範囲第(1)項記
載の気相成長装置。2. The thin film forming mechanism and the cleaning mechanism are arranged in series, and the adherend is continuously and sequentially conveyed to the both mechanisms. ) The vapor phase growth apparatus according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58103146A JPH067547B2 (en) | 1983-06-09 | 1983-06-09 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58103146A JPH067547B2 (en) | 1983-06-09 | 1983-06-09 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59228932A JPS59228932A (en) | 1984-12-22 |
| JPH067547B2 true JPH067547B2 (en) | 1994-01-26 |
Family
ID=14346369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58103146A Expired - Lifetime JPH067547B2 (en) | 1983-06-09 | 1983-06-09 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH067547B2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4807561A (en) * | 1986-05-19 | 1989-02-28 | Toshiba Machine Co., Ltd. | Semiconductor vapor phase growth apparatus |
| JPH0234789A (en) * | 1988-07-21 | 1990-02-05 | Hitachi Electron Eng Co Ltd | Vapor-phase reactor |
| US5169452A (en) * | 1990-05-14 | 1992-12-08 | Tdk Corporation | Apparatus for the synthesis of diamond-like thin films |
| JPH06272027A (en) * | 1993-03-17 | 1994-09-27 | Fuji Photo Film Co Ltd | Method for automatically cleaning vacuum deposition tank and device therefor |
| JP3732250B2 (en) * | 1995-03-30 | 2006-01-05 | キヤノンアネルバ株式会社 | In-line deposition system |
| JP3330300B2 (en) * | 1997-02-28 | 2002-09-30 | 東京エレクトロン株式会社 | Substrate cleaning device |
| TW552306B (en) | 1999-03-26 | 2003-09-11 | Anelva Corp | Method of removing accumulated films from the surfaces of substrate holders in film deposition apparatus, and film deposition apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0652714B2 (en) * | 1981-03-30 | 1994-07-06 | 株式会社日立製作所 | Thin film material manufacturing method |
| JPS5834913A (en) * | 1981-08-27 | 1983-03-01 | Mitsubishi Electric Corp | Purifying method of wafer supporting tool |
-
1983
- 1983-06-09 JP JP58103146A patent/JPH067547B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59228932A (en) | 1984-12-22 |
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