JPH0682997B2 - MOS differential amplifier circuit - Google Patents

MOS differential amplifier circuit

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Publication number
JPH0682997B2
JPH0682997B2 JP63161470A JP16147088A JPH0682997B2 JP H0682997 B2 JPH0682997 B2 JP H0682997B2 JP 63161470 A JP63161470 A JP 63161470A JP 16147088 A JP16147088 A JP 16147088A JP H0682997 B2 JPH0682997 B2 JP H0682997B2
Authority
JP
Japan
Prior art keywords
differential pair
differential amplifier
power supply
differential
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP63161470A
Other languages
Japanese (ja)
Other versions
JPH0210904A (en
Inventor
靖典 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
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Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP63161470A priority Critical patent/JPH0682997B2/en
Publication of JPH0210904A publication Critical patent/JPH0210904A/en
Publication of JPH0682997B2 publication Critical patent/JPH0682997B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、MOS差動増幅回路に関し、特に同相入力電圧
範囲の広いMOS差動増幅回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a MOS differential amplifier circuit, and more particularly to a MOS differential amplifier circuit having a wide common mode input voltage range.

〔従来の技術〕[Conventional technology]

第2図従来例の第1の例を示す回路図でPチャネルMOSF
ET入力型である。
FIG. 2 is a circuit diagram showing a first example of a conventional example, which is a P-channel MOSF.
It is an ET input type.

第2図に示すPチャネルMOSFET入力型差動増幅回路は、
電源端子13,14,入力端子10,11,出力端子12,差動対を構
成するPチャネルMOSFETM20,M21,能動負荷としてのNチ
ャネルMOSFETM22,M23,電流源としてのPチャネルMOSFET
M26より差動増幅段を構成し、出力段を構成するNチャ
ネルMOSFETM24,その能動負荷としてのPチャネルMOSFET
M25,バイアス回路を構成する定電流源I3,PチャネルMOSF
ETM27とからなる。C2は周波数補償用容量である。
The P-channel MOSFET input type differential amplifier circuit shown in FIG.
Power supply terminals 13 and 14, input terminals 10 and 11, output terminal 12, P-channel MOSFETs M20 and M21 forming a differential pair, N-channel MOSFETs M22 and M23 as active loads, P-channel MOSFETs as current sources
An N-channel MOSFET M24 that constitutes a differential amplifier stage from M26 and constitutes an output stage, and a P-channel MOSFET as its active load
M25, constant current source I3 that composes bias circuit, P-channel MOSF
Consists of ETM27. C2 is a frequency compensating capacitor.

PチャネルMOSFET入力型差動増幅回路は、同相入力電圧
が正側電源端子13の電源電圧へ近づくと、差動対M20,M2
1及び電流源としてのM26が定電流値での正常動作ができ
なくなる。このため、同相入力電圧は、正側電源端子13
の電源電圧に対して、電流源としてのM26のドレイン・
ソース間飽和電圧VDSsatと差動対M20,M21のゲート・ソ
ース間電圧VGSとの和の電圧以上低いものとなる。
When the in-phase input voltage approaches the power supply voltage of the positive power supply terminal 13, the P-channel MOSFET input differential amplifier circuit outputs a differential pair M20, M2.
1 and M26 as a current source cannot operate normally at a constant current value. Therefore, the common mode input voltage is
For the power supply voltage of M26, the drain of M26
It becomes lower than the sum of the saturation voltage V DSsat between sources and the gate-source voltage V GS of the differential pair M20, M21.

同様に、第2図のPチャネルMOSFET入力型差動増幅回路
のトランジスタの極性を変えたNチャネルMOSFET入力型
差動増幅回路(図示せず)では、今度は、同相入力電圧
の下限は負側電源端子14の電源電圧に対して制限を受け
る。
Similarly, in the N-channel MOSFET input type differential amplifier circuit (not shown) in which the polarity of the transistor of the P-channel MOSFET input type differential amplifier circuit is changed, the lower limit of the common mode input voltage is the negative side this time. Limited by the power supply voltage of the power supply terminal 14.

上述した同相入力電圧範囲が制限を受けるという欠点を
改善する為、第3図に示すような回路が、特願昭59−22
8612号公報により示されている。
In order to improve the above-mentioned drawback that the common-mode input voltage range is limited, a circuit as shown in FIG. 3 is disclosed in Japanese Patent Application No. 59-22.
No. 8612.

その回路構成は、電源端子23,24,入力端子20,21,出力端
子22,NチャネルMOSFETM37,M38により構成された第1の
差動対と能動負荷としてのPチャネルMOSFETM39,M40及
び電流源としてのNチャネルMOSFETM36からなる第1の
差動増幅回路と、PチャネルMOSFETM30,M31により構成
された第2の差動対と、電流源としてのPチャネルMOSF
ETM45及びM30のドレインと、第1の差動増幅回路のM37
のドレインに接続されたNチャネルMOSFETM32,M33から
なる第1の電流ミラー回路と、M31のドレインと第1の
差動増幅回路のM38のドレインに接続されたNチャネルM
OSFETM34,M35からなる第2の電流ミラー回路とからなる
第2の差動増幅回路よりなる差動増幅段とPチャネルMO
SFETM41と能動負荷としてのNチャネルMOSFETM42とから
なる出力段、及びバイアス回路を構成する定電流源I4,N
チャネルMOSFETM43,PチャネルMOSFETM44よりなる。C3は
周波数補償用容量である。
The circuit configuration is as follows: a first differential pair composed of power supply terminals 23, 24, input terminals 20, 21, output terminal 22, N-channel MOSFETs M37, M38, P-channel MOSFETs M39, M40 as an active load, and a current source. First differential amplifier circuit composed of N-channel MOSFET M36, a second differential pair composed of P-channel MOSFETs M30 and M31, and a P-channel MOSF as a current source.
Drain of ETM45 and M30, and M37 of the first differential amplifier circuit
A first current mirror circuit composed of N-channel MOSFETs M32 and M33 connected to the drain of M31, and an N-channel M connected to the drain of M31 and the drain of M38 of the first differential amplifier circuit.
A differential amplifier stage including a second differential amplifier circuit including a second current mirror circuit including OSFETs M34 and M35 and a P-channel MO
A constant current source I4, N forming a bias circuit and an output stage consisting of an SFET M41 and an N-channel MOSFET M42 as an active load.
It is composed of a channel MOSFET M43 and a P-channel MOSFET M44. C3 is a frequency compensating capacitor.

第3図に示すような回路において、同相入力電圧が正側
電源端子23の電源電圧へ近づくと、M30,M31により構成
される差動対からなる第2の差動増幅回路側は、前述し
た同相入力電圧に制限を受けるが、M37,M38により構成
される差動対からなる第1の差動増幅回路側は、こうし
た制限を受けない。逆に同相入力電圧が負側電源端子24
の電源電圧に近づくと、M30,M31により構成される差動
対からなる第2の差動増幅回路側は、同相入力電圧の制
限を受けない。
In the circuit as shown in FIG. 3, when the in-phase input voltage approaches the power supply voltage of the positive power supply terminal 23, the second differential amplifier circuit side composed of the differential pair composed of M30 and M31 is The common-mode input voltage is limited, but the first differential amplifier circuit side composed of the differential pair composed of M37 and M38 is not subject to such limitation. Conversely, the in-phase input voltage is negative power supply terminal 24
When approaching the power supply voltage of, the second differential amplifier circuit side composed of the differential pair constituted by M30 and M31 is not restricted by the common mode input voltage.

従って、同相入力電圧範囲は、ほぼ正側,負側の電源電
圧一杯となり、第2図に示すような回路における同相入
力電圧が制限を受けるという欠点が改善される。
Therefore, the common-mode input voltage range is almost full of the positive-side and negative-side power supply voltages, and the disadvantage that the common-mode input voltage in the circuit as shown in FIG. 2 is limited is improved.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

上述した従来の同相入力電圧が制限を受けるという欠点
を改善する為の第3図に示すような回路は以下に述べる
ような欠点がある。
The circuit as shown in FIG. 3 for improving the above-mentioned drawback that the common mode input voltage is limited has the following drawbacks.

MOS差動増幅回路におけるオフセット電圧には、大別し
て製造上の原因により整合性が要求される素子に対し
て、理想的には生じないはずのミスマッチが生じる事に
よるものと、回路設計上の原因により、全ての素子が理
想的な場合でも生じるものの2通りがある。
The offset voltage in the MOS differential amplifier circuit is roughly divided into the elements that are required to be matched due to manufacturing reasons, and a mismatch that should not occur ideally occurs. Therefore, there are two types that occur even if all the elements are ideal.

ここでは、オフセット電圧について、後者のものだけを
考える事にして、以後単にオフセット電圧と記す。
Here, regarding the offset voltage, only the latter one will be considered and will be simply referred to as an offset voltage hereinafter.

第2図に示す回路において、オフセット電圧の発生する
原因は、一般にはM22とM23の各々のゲート・ソース電圧
は等しいが、ドレイン・ソース電圧が等しいとは限らな
い為、M22とM23のドレイン電流が異なる事による。しか
しながらM24のゲート・ソース電圧がM22,M23のゲート・
ソース電圧に等しければ、M22とM23は、ゲート・ソース
電圧,ドレイン・ソース電圧が等しくなり、M22とM23の
ドレイン電流は等しく、オフセット電圧は発生しない。
したがって、トランジスタサイズを と選ぶ事により、M22,M23,M24のゲート・ソース電圧を
等しくでき、オフセット電圧を無くす事ができる。
In the circuit shown in FIG. 2, the cause of the offset voltage is that the gate-source voltages of M22 and M23 are generally the same, but the drain-source voltages are not always the same, so the drain currents of M22 and M23 are not the same. Is different. However, the gate-source voltage of M24 is
If they are equal to the source voltage, M22 and M23 have the same gate-source voltage and drain-source voltage, the drain currents of M22 and M23 are equal, and no offset voltage is generated.
Therefore, the transistor size By selecting, the gate and source voltages of M22, M23 and M24 can be made equal and the offset voltage can be eliminated.

同様にして第3図に示す回路においては、M41のゲート
・ソース電圧をM39とM40のゲート・ソース電圧と等しく
するよう、M39(M40)にはM37(M38)のドレイン電流の
他にM33(M35)のドレイン電流が流れる事に注意して、
次式のようにトランジスタサイズ選べばオフセット電圧
は無くせると考えられる。
Similarly, in the circuit shown in FIG. 3, in order to make the gate-source voltage of M41 equal to the gate-source voltage of M39 and M40, M39 (M40) has a drain current of M37 (M38) as well as M33 (M38). Note that the drain current of (M35) flows,
It is considered that the offset voltage can be eliminated by selecting the transistor size as in the following equation.

しかし、同相入力電圧が正側電源端子23の電源電圧付近
では、M30,M31より構成される第2の差動対及び電流源
としてのM45が定電流値での正常動作をしなくなるの
で、M39(M40)を流れる電流は、ほとんどM37(M38)の
ドレイン電流だけとなり、M41を流れる電流は一定であ
るのに対し、M39,M40を流れる電流が変化するため、
(2)式のようにトランジスタサイズを選んでも同相入
力電圧が、正側電源端子23の電源電圧付近では、M39,M4
0,M41のゲート・ソース電圧が等しくならずオフセット
電圧が発生してしまうという欠点があった。
However, when the common-mode input voltage is near the power supply voltage of the positive power supply terminal 23, the second differential pair composed of M30 and M31 and M45 as a current source do not operate normally at a constant current value. The current flowing through (M40) is almost exclusively the drain current of M37 (M38), and the current flowing through M41 is constant, whereas the current flowing through M39 and M40 changes.
Even if the transistor size is selected as shown in equation (2), the common-mode input voltage is M39, M4 near the power supply voltage of the positive power supply terminal 23.
There is a drawback that the gate and source voltages of 0 and M41 are not equal and an offset voltage is generated.

また、同相入力電圧が負側電源端子24の電源電圧付近で
も同様である。
The same applies when the in-phase input voltage is near the power supply voltage of the negative power supply terminal 24.

本発明の目的は、各々極性の異なる第1,第2の差動増幅
回路の組み合せからなる差動段と差動段の能動負荷のMO
SFETに流れる電流を検出し、その電流値に比例した電流
が流れるMOSFETの出力段を設けることにより、同相入力
電圧範囲をほぼ正側,負側の電源電圧一杯まで取ること
ができ、かつ同相入力電圧が電源電圧付近でもオフセッ
ト電圧を発生しないMOS差動増幅回路を提供することに
ある。
An object of the present invention is to provide a differential stage composed of a combination of first and second differential amplifier circuits having different polarities, and an MO of an active load of the differential stage.
By detecting the current flowing in the SFET and providing an output stage of the MOSFET through which a current proportional to the current value flows, the common mode input voltage range can be taken up to the full positive and negative side power supply voltage, and the common mode input An object is to provide a MOS differential amplifier circuit that does not generate an offset voltage even when the voltage is near the power supply voltage.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明のMOS差動増幅回路はゲートが各々第1・第2の
入力端子に接続された2個の第1導電型のMOSFETにより
構成された第1の差動対と、その共通ソースと第2の電
源端子間に設けられた第1の定電流源と、前記第1の差
動対を構成するMOSFETの各々のドレインと第1の電源端
子間に設けられた電流ミラー形態の第2導電型の2個の
負荷MOSFETとからなる第1の差動増幅回路と、ゲートが
各々前記第1・第2の入力端子に接続された2個の第2
導電型MOSFETにより構成された第2の差動対と、その共
通ソースと第1の電源端子間に設けられた第2の定電流
源と、前記第2の差動対を構成する一方の第1のMOSFET
のドレインと他方第2のMOSFETとゲートが共通で、前記
第1の差動増幅回路の差動対を構成しているMOSFETのド
レインに接続された2個の第1導電型のMOSFETからなる
第1の電流ミラー回路と前記第2の差動対を構成する第
2のMOSFETのドレインと前記第2の差動対を構成する第
1のMOSFETとゲートが共通で、前記第1の差動増幅回路
の差動対を構成するMOSFETのドレインに接続された2個
の第1導電型MOSFETからなる第2の電流ミラー回路より
なる第2の差動増幅回路とからなる差動増幅段と、前記
第1の差動増幅回路の負荷MOSFETに流れる電流を検出し
て、該電流値に比例した電流が流れる第2導電型のMOSF
ETよりなる出力段とを含んで構成される。
The MOS differential amplifier circuit of the present invention has a first differential pair composed of two MOSFETs of the first conductivity type whose gates are respectively connected to the first and second input terminals, a common source and a first differential pair. A first constant current source provided between the two power supply terminals, and a current mirror type second conductivity provided between the drains of the MOSFETs forming the first differential pair and the first power supply terminal. Differential amplifier circuit consisting of two load MOSFETs of the second type, and two second differential amplifiers whose gates are respectively connected to the first and second input terminals.
A second differential pair composed of a conductivity type MOSFET, a second constant current source provided between the common source thereof and the first power supply terminal, and one of the first differential pair constituting the second differential pair. 1 MOSFET
Of the first conductivity type MOSFET connected to the drains of the MOSFETs forming the differential pair of the first differential amplifier circuit and having a common drain and the second MOSFET on the other hand. The first differential amplifier has a common drain and a drain of a second MOSFET forming the second differential pair and a first MOSFET forming the second differential pair. A differential amplification stage including a second differential amplification circuit including a second current mirror circuit including two first conductivity type MOSFETs connected to drains of MOSFETs forming a differential pair of the circuit; A second conductivity type MOSF that detects a current flowing in the load MOSFET of the first differential amplifier circuit and flows a current proportional to the current value.
And an output stage composed of ET.

〔実施例〕〔Example〕

次に本発明について、図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.

第1図は、本発明の一実施例の等価回路図である。FIG. 1 is an equivalent circuit diagram of an embodiment of the present invention.

第1図に示すMOS差動増幅回路は、入力端子1,2,出力端
子3,電源端子4,5,NチャネルMOSFETM7,M8により構成され
た第1の差動対と、能動負荷としてのPチャネルMOSFET
M9,M10及び電流源I2よりなる第1の差動増幅回路と、P
チャネルMOSFETM1,M2により構成される第2の差動対と
電流源I1及びM1のドレインと前記第1の差動増幅回路の
M9のドレインに接続されたNチャネルMOSFETM3,M4から
なる第1の電流ミラー回路と、M2と、前記第1の差動増
幅回路のM8のドレインに接続されたNチャネルMOSFETM
5,M6から第2の電流ミラー回路よりなる第2の差動増幅
回路からなる差動増幅段と、前記第1の差動増幅回路に
おける能動負荷としてのM9と第3の電流ミラー回路を構
成するPチャネルMOSFETM11,また、M11のドレイン電流
を入力電流とする、NチャネルMOSFETM12,M13からなる
第4の電流ミラー回路と、前記第3,第4の電流ミラー回
路によりM9に流れる電流に比例した電流を折り返し、前
記第4の電流ミラー回路によりM9に流れる電流に比例し
た電流が流れているPチャネルMOSFETM14からなる出力
段により構成される。C1は周波数補償用の容量である。
The MOS differential amplifier circuit shown in FIG. 1 includes a first differential pair composed of input terminals 1 and 2, output terminal 3, power supply terminals 4 and 5, N-channel MOSFETs M7 and M8, and a P as an active load. Channel MOSFET
A first differential amplifier circuit comprising M9, M10 and a current source I2, and P
The second differential pair formed by the channel MOSFETs M1 and M2, the drains of the current sources I1 and M1 and the first differential amplifier circuit
A first current mirror circuit composed of N-channel MOSFETs M3 and M4 connected to the drain of M9, M2, and an N-channel MOSFET M connected to the drain of M8 of the first differential amplifier circuit.
5, a differential amplifier stage composed of M6 to a second differential amplifier circuit composed of a second current mirror circuit, M9 as an active load in the first differential amplifier circuit, and a third current mirror circuit A fourth current mirror circuit composed of P-channel MOSFET M11 and N-channel MOSFETs M12 and M13, which uses the drain current of M11 as an input current, and is proportional to the current flowing through M9 by the third and fourth current mirror circuits. The output stage is composed of a P-channel MOSFET M14 which folds back a current and in which a current proportional to the current flowing through M9 flows through the fourth current mirror circuit. C1 is a capacitance for frequency compensation.

第1図に示すMOS差動増幅回路は第3図に示す従来の同
相入力電圧範囲の広いMOS差動増幅回路と同様に各々極
性の異なる第1及び第2の差動増幅回路の組み合せによ
り差動段を構成しているので、同相入力電圧範囲は、ほ
ぼ正側,負側の電源端子4,5の電源電圧一杯に取る事が
できる。
The MOS differential amplifier circuit shown in FIG. 1 differs from the conventional MOS differential amplifier circuit having a wide common-mode input voltage range shown in FIG. 3 by the combination of the first and second differential amplifier circuits having different polarities. Since the driving stage is configured, the common-mode input voltage range can be set to the full power supply voltage of the positive and negative power supply terminals 4 and 5.

またオフセット電圧については、M14に流れる電流は、M
9に流れる電流に比例している為 が成り立つようにトランジスタサイズを選べばM9,M10,M
14のゲート・ソース電圧は等しくなり、オフセット電圧
は発生しない。
Regarding the offset voltage, the current flowing through M14 is M
Because it is proportional to the current flowing through 9, M9, M10, M if the transistor size is selected so that
The gate-source voltages of 14 are equal and no offset voltage is generated.

また、同相入力電圧が正側の電源端子4の電源電圧付近
で、M1,M2よりなる第1の差動対及び電流源I1が、定電
流値での正常動作をしなくなり、M9,M10を流れる電流が
変化しても、その変化を前記第3,第4の電流ミラー回路
で検出して、M14に流れる電流も変化させ、M14には常に
M9に流れる電流に比例した電流が流れるので(3)式の
ようにトランジスタサイズを選べば、同相入力電圧が正
側の電源端子4の電源電圧付近でも、M9,M10,M14のゲー
ト・ソース電圧は等しくオフセット電圧は発生しない。
Further, in the vicinity of the power supply voltage of the power supply terminal 4 on the positive side of the common mode input voltage, the first differential pair composed of M1 and M2 and the current source I1 do not operate normally at the constant current value, and M9 and M10 Even if the flowing current changes, the change is detected by the third and fourth current mirror circuits, and the current flowing in M14 is also changed.
Since a current proportional to the current flowing in M9 flows, if the transistor size is selected as shown in equation (3), the gate-source voltage of M9, M10, M14 can be set even when the common-mode input voltage is near the power supply voltage of power supply terminal 4 on the positive side. Does not generate an offset voltage equally.

同様に同相入力電圧が負側の電源端子5の電源電圧付近
でもオフセット電圧は発生しない。
Similarly, no offset voltage is generated even when the in-phase input voltage is near the power supply voltage of the power supply terminal 5 on the negative side.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明は、各々極性の異なる第1,第
2の差動増幅回路の組み合せからなる差動段と差動段の
能動負荷のMOSFETに流れる電流を検出し、その電流値に
比例した電流を出力段のMOSFETに流す事により、同相入
力電圧範囲をほぼ正側,負側の電源電圧一杯まで取るこ
とができ、かつ同相入力電圧が電源電圧付近でもオフセ
ット電圧を発生しないという効果がある。
As described above, the present invention detects the current flowing through the differential stage composed of a combination of the first and second differential amplifier circuits having different polarities and the MOSFET of the active load of the differential stage, and outputs the detected current value. By supplying a proportional current to the MOSFET in the output stage, the common-mode input voltage range can be taken up to the full positive and negative power supply voltage, and offset voltage is not generated even when the common-mode input voltage is near the power supply voltage. There is.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例の等価回路図、第2図は従来
の第1の例を示す回路図、第3図は従来の第2の例を示
す回路図である。 1,2,10,11,20,21……入力端子、3,12,22……出力端子、
4,13,23……正側電源端子、5,14,24……負側電源端子、 M1,M2,M9〜M11,M14,M20,M21,M25〜M27,M30,M31,M39〜M4
1,M44,M45……PチャネルMOSFET、M3〜M8,M12,M13,M22
〜M24,M32〜M38,M42,M43……NチャネルMOSFET、I1〜I4
……定電流源、C1〜C3……容量。
FIG. 1 is an equivalent circuit diagram of an embodiment of the present invention, FIG. 2 is a circuit diagram showing a first conventional example, and FIG. 3 is a circuit diagram showing a second conventional example. 1,2,10,11,20,21 …… Input terminal, 3,12,22 …… Output terminal,
4,13,23 …… Positive power supply terminal, 5,14,24 …… Negative power supply terminal, M1, M2, M9 to M11, M14, M20, M21, M25 to M27, M30, M31, M39 to M4
1, M44, M45 ... P-channel MOSFET, M3 to M8, M12, M13, M22
~ M24, M32 ~ M38, M42, M43 ... N-channel MOSFET, I1 ~ I4
…… Constant current source, C1 to C3 …… Capacity.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】ゲートが各々第1・第2の入力端子に接続
された2個の第1導電型のMOSFETにより構成された第1
の差動対と前記第1の差動対の共通ソースと第2の電源
端子間に設けられた第1の定電流源と前記第1の差動対
を構成するMOSFETの各々のドレインと第1の電源端子間
に設けられた電源ミラー形態の第2導電型の2個の負荷
MOSFETとからなる第1の差動増幅回路と、ゲートが各々
前記第1・第2の入力端子に接続された2個の第2導電
型のMOSFETにより構成された第2の差動対とその共通ソ
ースと第1の電源端子間に設けられた第2の定電流源と
前記第2の差動対を構成する一方の第1のMOSFETのドレ
インと、前記第2の差動対を構成する他方第2のMOSFET
とゲートが共通な前記第1の差動増幅回路の差動対を構
成しているMOSFETのドレインに接続された2個の第1導
電型MOSFETからなる第1の電流ミラー回路と前記第2の
差動対を構成する第2のMOSFETのドレインと前記第2の
差動対を構成する第1のMOSFETとゲートが共通な前記第
1の差動回路の差動対を構成しているMOSFETのドレイン
に接続された2個の第1導電型のMOSFETからなる第2の
電流ミラー回路からなる第2の差動増幅回路と、前記第
1の差動増幅回路の負荷MOSFETに流れる電流を検出して
該電流値に比例した電流が流れる前記第1,第2の差動増
幅回路の共通出力とゲートが接続されたソース接地型の
第2の導電型のMOSFETとを含むことを特徴とするMOS差
動増幅回路。
1. A first gate composed of two MOSFETs of a first conductivity type whose gates are respectively connected to first and second input terminals.
Differential pair, a common source of the first differential pair, and a first constant current source provided between the second power supply terminal and a drain of each of the MOSFETs forming the first differential pair. Two loads of the second conductivity type in the form of a power supply mirror provided between the first power supply terminals
A first differential amplifier circuit composed of a MOSFET, a second differential pair composed of two second conductivity type MOSFETs whose gates are connected to the first and second input terminals, respectively, and the second differential pair. A second constant current source provided between a common source and a first power supply terminal, and a drain of one first MOSFET forming the second differential pair, and the second differential pair are formed. On the other hand, the second MOSFET
A first current mirror circuit composed of two MOSFETs of the first conductivity type connected to the drains of the MOSFETs forming a differential pair of the first differential amplifier circuit having a common gate Of the MOSFET forming the differential pair of the first differential circuit in which the drain of the second MOSFET forming the differential pair and the first MOSFET forming the second differential pair have a common gate; A second differential amplifier circuit formed of a second current mirror circuit composed of two MOSFETs of the first conductivity type connected to the drain and a current flowing through the load MOSFET of the first differential amplifier circuit are detected. And a common output of the first and second differential amplifier circuits through which a current proportional to the current value flows and a source-grounded second conductivity type MOSFET connected to the gate. Differential amplifier circuit.
JP63161470A 1988-06-28 1988-06-28 MOS differential amplifier circuit Expired - Lifetime JPH0682997B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63161470A JPH0682997B2 (en) 1988-06-28 1988-06-28 MOS differential amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63161470A JPH0682997B2 (en) 1988-06-28 1988-06-28 MOS differential amplifier circuit

Publications (2)

Publication Number Publication Date
JPH0210904A JPH0210904A (en) 1990-01-16
JPH0682997B2 true JPH0682997B2 (en) 1994-10-19

Family

ID=15735707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63161470A Expired - Lifetime JPH0682997B2 (en) 1988-06-28 1988-06-28 MOS differential amplifier circuit

Country Status (1)

Country Link
JP (1) JPH0682997B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2586171B2 (en) * 1990-03-26 1997-02-26 日本電気株式会社 Operational amplifier
US5856749A (en) * 1996-11-01 1999-01-05 Burr-Brown Corporation Stable output bias current circuitry and method for low-impedance CMOS output stage

Also Published As

Publication number Publication date
JPH0210904A (en) 1990-01-16

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