JPH0683054A - Photosensitive resin composition - Google Patents
Photosensitive resin compositionInfo
- Publication number
- JPH0683054A JPH0683054A JP23860092A JP23860092A JPH0683054A JP H0683054 A JPH0683054 A JP H0683054A JP 23860092 A JP23860092 A JP 23860092A JP 23860092 A JP23860092 A JP 23860092A JP H0683054 A JPH0683054 A JP H0683054A
- Authority
- JP
- Japan
- Prior art keywords
- formula
- acid ester
- group
- photosensitive resin
- resin composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims description 9
- 150000002148 esters Chemical class 0.000 claims abstract description 14
- 229920005575 poly(amic acid) Polymers 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 9
- 239000004593 Epoxy Substances 0.000 abstract description 10
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 4
- 229920005989 resin Polymers 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 239000003566 sealing material Substances 0.000 abstract description 3
- 239000004952 Polyamide Substances 0.000 abstract 3
- 239000002253 acid Substances 0.000 abstract 3
- 229920002647 polyamide Polymers 0.000 abstract 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 description 14
- -1 4-aminophenoxy Chemical group 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000009719 polyimide resin Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 206010034972 Photosensitivity reaction Diseases 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- KMKWGXGSGPYISJ-UHFFFAOYSA-N 4-[4-[2-[4-(4-aminophenoxy)phenyl]propan-2-yl]phenoxy]aniline Chemical compound C=1C=C(OC=2C=CC(N)=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OC1=CC=C(N)C=C1 KMKWGXGSGPYISJ-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000004040 coloring Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- 239000008096 xylene Substances 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 2
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 150000004985 diamines Chemical class 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OYDNMGZCIANYBE-UHFFFAOYSA-N (1-hydroxy-3-prop-2-enoyloxypropan-2-yl) 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(CO)COC(=O)C=C OYDNMGZCIANYBE-UHFFFAOYSA-N 0.000 description 1
- LGPAKRMZNPYPMG-UHFFFAOYSA-N (3-hydroxy-2-prop-2-enoyloxypropyl) prop-2-enoate Chemical compound C=CC(=O)OC(CO)COC(=O)C=C LGPAKRMZNPYPMG-UHFFFAOYSA-N 0.000 description 1
- ADFXKUOMJKEIND-UHFFFAOYSA-N 1,3-dicyclohexylurea Chemical compound C1CCCCC1NC(=O)NC1CCCCC1 ADFXKUOMJKEIND-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 description 1
- KAJBSGLXSREIHP-UHFFFAOYSA-N 2,2-bis[(2-sulfanylacetyl)oxymethyl]butyl 2-sulfanylacetate Chemical compound SCC(=O)OCC(CC)(COC(=O)CS)COC(=O)CS KAJBSGLXSREIHP-UHFFFAOYSA-N 0.000 description 1
- PSYGHMBJXWRQFD-UHFFFAOYSA-N 2-(2-sulfanylacetyl)oxyethyl 2-sulfanylacetate Chemical compound SCC(=O)OCCOC(=O)CS PSYGHMBJXWRQFD-UHFFFAOYSA-N 0.000 description 1
- ZFFTZDQKIXPDAF-UHFFFAOYSA-N 2-Furanmethanethiol Chemical compound SCC1=CC=CO1 ZFFTZDQKIXPDAF-UHFFFAOYSA-N 0.000 description 1
- LTHJXDSHSVNJKG-UHFFFAOYSA-N 2-[2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOCCOC(=O)C(C)=C LTHJXDSHSVNJKG-UHFFFAOYSA-N 0.000 description 1
- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- VHSHLMUCYSAUQU-UHFFFAOYSA-N 2-hydroxypropyl methacrylate Chemical compound CC(O)COC(=O)C(C)=C VHSHLMUCYSAUQU-UHFFFAOYSA-N 0.000 description 1
- GWZMWHWAWHPNHN-UHFFFAOYSA-N 2-hydroxypropyl prop-2-enoate Chemical compound CC(O)COC(=O)C=C GWZMWHWAWHPNHN-UHFFFAOYSA-N 0.000 description 1
- FLFWJIBUZQARMD-UHFFFAOYSA-N 2-mercapto-1,3-benzoxazole Chemical compound C1=CC=C2OC(S)=NC2=C1 FLFWJIBUZQARMD-UHFFFAOYSA-N 0.000 description 1
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- RRBONVXWAGQXDJ-UHFFFAOYSA-N 4-methoxybutyl 2-sulfanylacetate Chemical compound COCCCCOC(=O)CS RRBONVXWAGQXDJ-UHFFFAOYSA-N 0.000 description 1
- WLHCBQAPPJAULW-UHFFFAOYSA-N 4-methylbenzenethiol Chemical compound CC1=CC=C(S)C=C1 WLHCBQAPPJAULW-UHFFFAOYSA-N 0.000 description 1
- BXAVKNRWVKUTLY-UHFFFAOYSA-N 4-sulfanylphenol Chemical compound OC1=CC=C(S)C=C1 BXAVKNRWVKUTLY-UHFFFAOYSA-N 0.000 description 1
- QQGYZOYWNCKGEK-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)oxy]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(OC=2C=C3C(=O)OC(C3=CC=2)=O)=C1 QQGYZOYWNCKGEK-UHFFFAOYSA-N 0.000 description 1
- YEMVKBHTRGTNJT-UHFFFAOYSA-N 5-phenyl-4,5-dihydro-1,3-oxazole Chemical compound C1N=COC1C1=CC=CC=C1 YEMVKBHTRGTNJT-UHFFFAOYSA-N 0.000 description 1
- 229920001342 Bakelite® Polymers 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OAOANFGURTXYPE-UHFFFAOYSA-N C(CC)(=S)OCCCCO Chemical compound C(CC)(=S)OCCCCO OAOANFGURTXYPE-UHFFFAOYSA-N 0.000 description 1
- XCHLRFRZJLYDOF-UHFFFAOYSA-N CCC.OC(=O)C=C.OC(=O)C=C Chemical compound CCC.OC(=O)C=C.OC(=O)C=C XCHLRFRZJLYDOF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QOSSAOTZNIDXMA-UHFFFAOYSA-N Dicylcohexylcarbodiimide Chemical compound C1CCCCC1N=C=NC1CCCCC1 QOSSAOTZNIDXMA-UHFFFAOYSA-N 0.000 description 1
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- NPKSPKHJBVJUKB-UHFFFAOYSA-N N-phenylglycine Chemical compound OC(=O)CNC1=CC=CC=C1 NPKSPKHJBVJUKB-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- OYUVOPFBKVLKNU-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(2-methylprop-2-enoyloxymethyl)-3-prop-2-enoyloxypropyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(COC(=O)C=C)COC(=O)C(C)=C OYUVOPFBKVLKNU-UHFFFAOYSA-N 0.000 description 1
- GCNKJQRMNYNDBI-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(2-methylprop-2-enoyloxymethyl)butyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(CC)COC(=O)C(C)=C GCNKJQRMNYNDBI-UHFFFAOYSA-N 0.000 description 1
- TUOBEAZXHLTYLF-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CC)COC(=O)C=C TUOBEAZXHLTYLF-UHFFFAOYSA-N 0.000 description 1
- JUDXBRVLWDGRBC-UHFFFAOYSA-N [2-(hydroxymethyl)-3-(2-methylprop-2-enoyloxy)-2-(2-methylprop-2-enoyloxymethyl)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(COC(=O)C(C)=C)COC(=O)C(C)=C JUDXBRVLWDGRBC-UHFFFAOYSA-N 0.000 description 1
- ZAXUZNBAVXOOCM-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C ZAXUZNBAVXOOCM-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- RUDUCNPHDIMQCY-UHFFFAOYSA-N [3-(2-sulfanylacetyl)oxy-2,2-bis[(2-sulfanylacetyl)oxymethyl]propyl] 2-sulfanylacetate Chemical compound SCC(=O)OCC(COC(=O)CS)(COC(=O)CS)COC(=O)CS RUDUCNPHDIMQCY-UHFFFAOYSA-N 0.000 description 1
- UKMBKKFLJMFCSA-UHFFFAOYSA-N [3-hydroxy-2-(2-methylprop-2-enoyloxy)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)OC(=O)C(C)=C UKMBKKFLJMFCSA-UHFFFAOYSA-N 0.000 description 1
- 125000004018 acid anhydride group Chemical group 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- ZZTCCAPMZLDHFM-UHFFFAOYSA-N ammonium thioglycolate Chemical compound [NH4+].[O-]C(=O)CS ZZTCCAPMZLDHFM-UHFFFAOYSA-N 0.000 description 1
- 229940075861 ammonium thioglycolate Drugs 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- KGQLBLGDIQNGSB-UHFFFAOYSA-N benzene-1,4-diol;methoxymethane Chemical compound COC.OC1=CC=C(O)C=C1 KGQLBLGDIQNGSB-UHFFFAOYSA-N 0.000 description 1
- UENWRTRMUIOCKN-UHFFFAOYSA-N benzyl thiol Chemical compound SCC1=CC=CC=C1 UENWRTRMUIOCKN-UHFFFAOYSA-N 0.000 description 1
- SKGVGRLWZVRZDC-UHFFFAOYSA-N butyl 2-sulfanylacetate Chemical compound CCCCOC(=O)CS SKGVGRLWZVRZDC-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 125000005641 methacryl group Chemical group 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- MADOXCFISYCULS-UHFFFAOYSA-N octyl 2-sulfanylacetate Chemical compound CCCCCCCCOC(=O)CS MADOXCFISYCULS-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 208000017983 photosensitivity disease Diseases 0.000 description 1
- 231100000434 photosensitization Toxicity 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- 229940103494 thiosalicylic acid Drugs 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、優れた感光性を保持
し、硬化後の皮膜が半導体素子及び封止樹脂との密着性
に優れた感光性樹脂組成物である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is a photosensitive resin composition which retains excellent photosensitivity and has a cured film excellent in adhesion to a semiconductor element and a sealing resin.
【0002】[0002]
【従来の技術】従来、半導体素子の表面保護膜、層間絶
縁膜等には、耐熱性が優れ、また卓越した電気的特性、
機械的特性等を有するポリイミドが用いられているが、
近年半導体素子の高集積化、大型化、封止樹脂パッケー
ジの薄型化、小型化、半田リフローによる表面実装方式
への移行等により耐熱サイクル性、耐熱ショック性等の
著しい向上の要求があり、更に高性能なポリイミド樹脂
が必要とされるようになってきた。一方、ポリイミド樹
脂自身に感光性を付与する技術が最近注目を集めてき
た。これらの感光性を付与したポリイミド樹脂を使用す
ると、付与していないポリイミド樹脂に比較してパター
ン作成工程の簡素化効果があるだけでなく、毒性の強い
エッチング液を使用しなくてすむので、安全、公害上も
優れており、ポリイミド樹脂の感光性化は重要な技術と
なることが期待されている。感光性ポリイミド樹脂とし
ては、例えば下式(A)2. Description of the Related Art Conventionally, surface protection films, interlayer insulating films, etc. of semiconductor elements have excellent heat resistance and excellent electrical characteristics.
Polyimide, which has mechanical properties, is used,
In recent years, due to the high integration of semiconductor elements, large size, thinning and miniaturization of encapsulation resin package, and transition to surface mounting method by solder reflow, there has been a demand for remarkable improvement in heat cycle resistance, heat shock resistance, etc. High performance polyimide resins have been required. On the other hand, a technique of imparting photosensitivity to the polyimide resin itself has recently attracted attention. The use of these photosensitized polyimide resins not only has the effect of simplifying the pattern creation process compared to non-added polyimide resins, but it also saves the use of highly toxic etching liquids, so it is safe. It is also excellent in terms of pollution, and it is expected that photosensitization of polyimide resin will be an important technology. As the photosensitive polyimide resin, for example, the following formula (A)
【0003】[0003]
【化3】 [Chemical 3]
【0004】で示されるような構造のエステル基で感光
性基を付与したポリイミド前駆体組成物(例えば特公昭
55−41422号公報、特開昭60−228537号
公報)あるいは下式(B)A polyimide precursor composition having a photosensitive group with an ester group having a structure as shown in (for example, JP-B-55-41422, JP-A-60-228537) or the following formula (B)
【0005】[0005]
【化4】 [Chemical 4]
【0006】で示されるような構造のポリアミック酸に
化学線により2量化、または重合可能な炭素−炭素二重
結合及びアミノ基または、その四級化塩を含む化合物を
添加した組成物(例えば特公昭59−52822号公
報)等が知られている。これらは、いずれも適当な有機
溶剤に溶解し、ワニス状態で塗布、乾燥した後、フォト
マスクを介して紫外線照射し、現像、リンス処理して所
望のパターンを得、更に加熱処理することによりポリイ
ミド皮膜としている。しかし、かかる従来の技術は感光
性特性に優れ、Si等の基板との密着性も良いものであ
ったが、エポキシ系封止材料との密着性が低く問題にな
っていた。A composition obtained by adding a compound containing a carbon-carbon double bond and an amino group or a quaternized salt thereof, which is dimerized or actinically exposed to actinic radiation, to a polyamic acid having the structure shown in (for example, JP-A-59-52822) and the like are known. All of these are dissolved in an appropriate organic solvent, applied in a varnish state, dried, irradiated with ultraviolet rays through a photomask, developed and rinsed to obtain a desired pattern, and further subjected to heat treatment to form a polyimide. It is a film. However, although such a conventional technique has excellent photosensitivity and good adhesion to a substrate such as Si, it has a problem of low adhesion to an epoxy-based encapsulating material.
【0007】[0007]
【発明が解決しようとする課題】本発明の目的は半導体
素子及びエポキシ系封止材料との密着性に優れ、しかも
吸湿処理後に劣化がない感光性樹脂を提供するものであ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a photosensitive resin which is excellent in adhesiveness between a semiconductor element and an epoxy type encapsulating material and which is not deteriorated after a moisture absorption treatment.
【0008】[0008]
【課題を解決するための手段】本発明は式(1)で示さ
れるポリアミド酸エステルを主成分とする感光性樹脂組
成物である。The present invention is a photosensitive resin composition containing a polyamic acid ester represented by the formula (1) as a main component.
【0009】[0009]
【化5】 [Chemical 5]
【0010】[0010]
【化6】 [Chemical 6]
【0011】[0011]
【作用】本発明において用いる式(1)で示されるポリ
アミド酸エステルは、高い感度を保持し、半導体素子及
びエポキシ系封止材料との密着性が優れていることを特
徴とする。式(1)中、R1は4価の有機基を有する化
合物から導入されるもので、ピロメリット酸二無水物、
3,3',4,4'−ベンゾフェノンテトラカルボン酸二無
水物、4,4'−オキシジフタル酸二無水物又はこれらの
誘導体が使用される。また使用にあたっては1種類でも
2種類以上の混合物であってもかまわない。The polyamic acid ester represented by the formula (1) used in the present invention is characterized by having high sensitivity and excellent adhesiveness with the semiconductor element and the epoxy-based encapsulating material. In formula (1), R 1 is introduced from a compound having a tetravalent organic group, and pyromellitic dianhydride,
3,3 ', 4,4'-benzophenone tetracarboxylic dianhydride, 4,4'-oxydiphthalic dianhydride or derivatives thereof are used. In addition, one kind or a mixture of two or more kinds may be used.
【0012】式(1)中、R2は2価の有機基を有する
化合物から導入されるもので、4,4'−ジアミノジフェ
ニルエーテル及び2,2−ビス〔4−(4−アミノフェ
ノキシ)フェニル〕プロパンもしくはこれらの誘導体が
使用される。又、4,4'−ジアミノジフェニルエーテル
の構造単位のモル百分率を〔R21〕、2,2−ビス〔4
−(4−アミノフェノキシ)フェニル〕プロパンの構造
単位のモル百分率を〔R22〕とすると〔R21〕+
〔R22〕=100で、4>〔R21〕/〔R22〕≧0の値
をとる。4≦〔R21〕/〔R22〕であるとエポキシ系封
止材料及びSi等の基板等への密着性が低く、好ましく
ない。より好ましくは2>〔R21〕/〔R22〕>0.5
である。In the formula (1), R 2 is introduced from a compound having a divalent organic group and includes 4,4'-diaminodiphenyl ether and 2,2-bis [4- (4-aminophenoxy) phenyl. ] Propane or derivatives thereof are used. Also, the molar percentage of the structural units of 4,4'-diaminodiphenyl ether [R 21], 2,2-bis [4
- (4-aminophenoxy) when the molar percentage of the structural units of the phenyl] propane and [R 22] [R 21] +
[R 22 ] = 100 and 4> [R 21 ] / [R 22 ] ≧ 0. When 4 ≦ [R 21 ] / [R 22 ], the adhesion of the epoxy-based encapsulating material and Si to the substrate or the like is low, which is not preferable. More preferably 2> [R 21 ] / [R 22 ]> 0.5
Is.
【0013】式(1)中、R3 は、アクリル(メタクリ
ル)基を1〜3基有する感光性基である。アクリル(メ
タクリル)基が0では架橋構造が得られず好ましくな
い。また4基以上のアクリル(メタクリル)基は硬化後
の着色を濃くするので好ましくない。R3を導入するた
めの化合物しては、例えば、ペンタエリスリトールトリ
アクリレート、ペンタエリスリトールトリメタクリレー
ト、ペンタエリスリトールアクリレートジメタクリレー
ト、ペンタエリスリトールジアクリレートメタクリレー
ト、グリセロールジアクリレート、グリセロールジメタ
クリレート、グリセロールアクリレートメタクリレー
ト、トリメチロールプロパンジアクリレート、1,3−
ジアクリロイルエチル−5−ヒドロキシエチルイソシア
ヌレート、1,3−ジメタクリレート−5−ヒドロキシ
エチルイソシアヌレート、エチレングリコール変性ペン
タエリスリトールトリアクリレート、プロピレングリコ
ール変性ペンタエリスリトールトリアクリレート、トリ
メチロールプロパンジアクリレート、トリメチロールプ
ロパンジメタクリレート、2−ヒドロキシエチルメタク
リレート、2−ヒドロキシエチルアクリレート、グリシ
ジルメタクリレート、グリシジルアクリレート、2−ヒ
ドロキシプロピルメタクリレート、2−ヒドロキシプロ
ピルアクリレート、ポリエチレングリコール変性メタク
リレート、ポリエチレングリコール変性アクリレート、
ポリプロピレングリコール変性アクリレート、ポリプロ
ピレングリコール変性メタクリレート等が挙げられる
が、これらに限定されない。これらの使用にあたっては
1種類でも2種類以上の混合物でもかまわない。In the formula (1), R 3 is a photosensitive group having 1 to 3 acrylic (methacryl) groups. When the acryl (methacryl) group is 0, a crosslinked structure cannot be obtained, which is not preferable. Further, four or more acrylic (methacrylic) groups are not preferable because they deepen the coloring after curing. Examples of the compound for introducing R 3 include pentaerythritol triacrylate, pentaerythritol trimethacrylate, pentaerythritol acrylate dimethacrylate, pentaerythritol diacrylate methacrylate, glycerol diacrylate, glycerol dimethacrylate, glycerol acrylate methacrylate, trimethylol. Propane diacrylate, 1,3-
Diacryloylethyl-5-hydroxyethyl isocyanurate, 1,3-dimethacrylate-5-hydroxyethyl isocyanurate, ethylene glycol modified pentaerythritol triacrylate, propylene glycol modified pentaerythritol triacrylate, trimethylolpropane diacrylate, trimethylolpropane Dimethacrylate, 2-hydroxyethyl methacrylate, 2-hydroxyethyl acrylate, glycidyl methacrylate, glycidyl acrylate, 2-hydroxypropyl methacrylate, 2-hydroxypropyl acrylate, polyethylene glycol modified methacrylate, polyethylene glycol modified acrylate,
Examples thereof include, but are not limited to, polypropylene glycol-modified acrylate and polypropylene glycol-modified methacrylate. In using these, one kind or a mixture of two or more kinds may be used.
【0014】式(1)中、R4は、−CH3基又は−C2
H5基である。これらのエステルは、硬化物中、メチル
基、エチル基が高揮発性であるために低着色となる特徴
を有する。−C2H5基以上のプロピル基、ブチル基等で
は、着色が濃くなるとともにカルボキシル基との反応性
が低下するので好ましくない。また、感光基R3とR4の
それぞれの構造単位の割合は、それぞれのモル百分率を
〔R3〕、〔R4〕とすると、〔R3〕+〔R4〕=10
0、0.2<〔R3〕/〔R4〕<2である。0.2以下
であると、感光特性が低下し、好ましくない。2以上で
あると、硬化皮膜の着色度合いが大きくなり、好ましく
ない。In the formula (1), R 4 is --CH 3 group or --C 2
H 5 group. These esters are characterized by low coloring due to the high volatility of methyl groups and ethyl groups in the cured product. -C 2 H 5 group or propyl group, a butyl group or the like is not preferable because with colored darker the reactivity with the carboxyl groups decreases. Further, the ratio of the structural units of the photosensitive groups R 3 and R 4 is [R 3 ] + [R 4 ] = 10, where the molar percentages are [R 3 ], [R 4 ].
0 and 0.2 <[R 3 ] / [R 4 ] <2. When it is 0.2 or less, the photosensitivity is deteriorated, which is not preferable. When it is 2 or more, the degree of coloring of the cured film increases, which is not preferable.
【0015】式(1)で示されるポリアミド酸エステル
は、カルボキシル基に感光基が導入された構造単位の割
合がX、一部に感光基が導入された構造単位の割合が
Y、カルボキシル基にCH3基又はC2H5基が導入され
た構造単位の割合がZであり、3種の構造単位が混在し
ているものである。それぞれ、0<X,Y<100、0
<Z<80で、かつX+Y+Z=100を満たすもの
で、X,Y,Zは各構造単位のモル百分率を示すもので
ある。Zが80以上であると感光基量が少なく感度が低
く実用性が少ない。In the polyamic acid ester represented by the formula (1), the proportion of structural units having a photosensitive group introduced into a carboxyl group is X, the proportion of structural units having a photosensitive group partially introduced is Y, and a carboxyl group is a carboxyl group. The ratio of the structural units having the CH 3 group or C 2 H 5 group introduced is Z, and three types of structural units are mixed. 0 <X, Y <100, 0 respectively
<Z <80 and X + Y + Z = 100 are satisfied, and X, Y, and Z represent the mole percentage of each structural unit. When Z is 80 or more, the amount of the photosensitive group is small, the sensitivity is low and the practicality is low.
【0016】本発明におけるポリアミド酸エステル
(1)は、通常以下のようにして合成される。まず、感
光基R3及びR4を導入するためのアルコール基を有する
化合物を溶媒に溶解させ、これに過剰の酸無水物又はそ
の誘導体を反応させる。この後、残存するカルボキシル
基、酸無水物基に、ジアミンを反応させることにより合
成することができる。即ち、R3成分及びR4成分、酸無
水物成分、ジアミン成分の反応モル比を制御することに
より、R3及びR4のモル比ならびに分子量を容易に制御
することが可能である。本発明においては、感度、解像
度等のリソグラフィー特性を向上するために増感剤、開
始剤、保存性向上剤等を添加してもよい。増感剤として
は、The polyamic acid ester (1) in the present invention is usually synthesized as follows. First, a compound having an alcohol group for introducing the photosensitive groups R 3 and R 4 is dissolved in a solvent, and an excess acid anhydride or its derivative is reacted with this. After that, the remaining carboxyl group and acid anhydride group can be reacted with diamine to synthesize. That is, by controlling the reaction molar ratio of the R 3 component and R 4 component, the acid anhydride component, and the diamine component, the molar ratio of R 3 and R 4 and the molecular weight can be easily controlled. In the present invention, a sensitizer, an initiator, a storability improver and the like may be added to improve lithographic properties such as sensitivity and resolution. As a sensitizer,
【0017】[0017]
【化7】 [Chemical 7]
【0018】[0018]
【化8】 [Chemical 8]
【0019】等が挙げられるが、これに限定されるもの
ではない。また、使用にあたっては1種類でも2種類以
上の混合物でも構わない。添加量は、ポリアミド酸エス
テル100重量部に対して増感剤は0.1〜10重量部
が好ましい。0.1重量部以下では、添加量が少なすぎ
感度向上の効果が得られ難い。10重量部以上では、硬
化フィルム強度を低下させ好ましくない。Although not limited thereto, the present invention is not limited thereto. In addition, one kind or a mixture of two or more kinds may be used. The amount of the sensitizer added is preferably 0.1 to 10 parts by weight with respect to 100 parts by weight of the polyamic acid ester. If it is 0.1 part by weight or less, the amount of addition is too small and it is difficult to obtain the effect of improving sensitivity. If it is 10 parts by weight or more, the strength of the cured film is lowered, which is not preferable.
【0020】更に、開始剤として、N−フェニルグリシ
ン、N−フェニルジエタノールアミン、3,3',4,4'
−ベンゾフェノンテトラカルボン酸、テトラ−t−ブチ
ルパーオキサイド、5−フェニルオキサゾリン、各種オ
キシム化合物、また保存性向上のために、1−フェニル
−5−メルカプト−(1H−テトラゾール)、2−メル
カプトベンゾチアゾール、2−メルカプトベンゾイミダ
ゾール、2−メルカプトベンゾオキサゾール、ペンタエ
リスリトールテトラキス−(チオグリコレート)、チオ
グリコール酸、チオグリコール酸アンモニウム、チオグ
リコール酸ブチル、チオグリコール酸オクチル、チオグ
タコール酸メトキシブチル、トリメチロールプロパント
リス−(チオグリコレート)、エチレングリコールジチ
オグリコレート、β−メルカプトプロピオン酸、β−メ
ルカプトプロピオン酸オクチル、トリメチロールプロパ
ントリス−(β−チオプロピオネート)、ペンタエリス
リトールテトラキス−(β−チオプロピオネート)、
1,4−ブタンジオールジチオプロピオネート、チオサ
リチル酸、フルフリルメルカプタン、ベンジルメルカプ
タン、α−メルカプトプロピオン酸、p−ヒドロキシチ
オフェノール、p−メチルチオフェノール、チオフェノ
ール等を添加してもよい。Further, as an initiator, N-phenylglycine, N-phenyldiethanolamine, 3,3 ', 4,4'
-Benzophenone tetracarboxylic acid, tetra-t-butyl peroxide, 5-phenyloxazoline, various oxime compounds, and 1-phenyl-5-mercapto- (1H-tetrazole), 2-mercaptobenzothiazole for improving storage stability. , 2-mercaptobenzimidazole, 2-mercaptobenzoxazole, pentaerythritol tetrakis- (thioglycolate), thioglycolic acid, ammonium thioglycolate, butyl thioglycolate, octyl thioglycolate, methoxybutyl thioglycolate, trimethylolpropane Tris- (thioglycolate), ethylene glycol dithioglycolate, β-mercaptopropionic acid, octyl β-mercaptopropionate, trimethylolpropane tris- (β-thiol Propionate), pentaerythritol tetrakis - (beta-thiopropionate),
1,4-butanediol dithiopropionate, thiosalicylic acid, furfuryl mercaptan, benzyl mercaptan, α-mercaptopropionic acid, p-hydroxythiophenol, p-methylthiophenol, thiophenol and the like may be added.
【0021】本発明による感光性樹脂組成物には、この
他接着助剤、禁止剤、レベリング剤その他各種充填剤を
添加してもよい。In addition to the above, an adhesion aid, an inhibitor, a leveling agent and various other fillers may be added to the photosensitive resin composition according to the present invention.
【0022】本発明による感光性樹脂組成物の使用方法
は、まず、該組成物を適当な支持体、例えはシリコンウ
エハやセラミック、アルミ基板等に塗布する。塗布方法
はスピンナーを用いた回転塗布、スプレーコーターを用
いた噴霧塗布、浸漬、印刷、ロールコーティング等で行
なう。次に60〜80℃の低温でプリベークして塗膜を
乾燥後、所望のパターン形状に化学線を照射する。化学
線としてはX線、電子線、紫外線、可視光線等が使用で
きるが、200〜500nmの波長のものが好ましい。In the method of using the photosensitive resin composition according to the present invention, first, the composition is applied to a suitable support, for example, a silicon wafer, a ceramic, an aluminum substrate or the like. The coating method is spin coating using a spinner, spray coating using a spray coater, dipping, printing, roll coating, or the like. Next, after prebaking at a low temperature of 60 to 80 ° C. to dry the coating film, a desired pattern shape is irradiated with actinic rays. As the actinic rays, X rays, electron rays, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable.
【0023】次に、未照射部を現像液で溶解除去するこ
とによりレリーフパターンを得る。現像液としては、N
−メチル−2−ピロリドン、N,N−ジメチルアセトア
ミド、N,N−ジメチルホルムアミド等や、メタノー
ル、キシレン、イソプロピルアルコール、水、アルカリ
水溶液等を単独または混合して使用する。現像方法とし
ては、スプレー、パドル、浸漬、超音波等の方式が可能
である。Next, a relief pattern is obtained by dissolving and removing the unirradiated portion with a developing solution. As a developing solution, N
-Methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide, etc., methanol, xylene, isopropyl alcohol, water, alkaline aqueous solution, etc. may be used alone or in combination. As a developing method, methods such as spraying, paddle, dipping, and ultrasonic wave can be used.
【0024】次に、現像によって形成したレリーフパタ
ーンをリンスする。リンス液としては、メタノール、キ
シレン、エタノール、イソプロピルアルコール、酢酸ブ
チル、水等を使用する。次に加熱処理を行ない、イミド
環を形成し、耐熱性に富む最終パターンを得る。Next, the relief pattern formed by development is rinsed. As the rinse liquid, methanol, xylene, ethanol, isopropyl alcohol, butyl acetate, water or the like is used. Next, heat treatment is performed to form an imide ring, and a final pattern having high heat resistance is obtained.
【0025】本発明による感光性樹脂組成物は、半導体
用途のみならず、多層回路の層間絶縁膜やフレキシブル
銅張板のカバーコート、ソルダーレジスト膜や液晶配向
膜等としても有用である。The photosensitive resin composition according to the present invention is useful not only for semiconductor applications, but also as an interlayer insulating film of a multilayer circuit, a cover coat of a flexible copper clad board, a solder resist film, a liquid crystal alignment film and the like.
【0026】[0026]
【実施例】以下実施例により本発明を具体的に説明す
る。 実施例1 ピロメリット酸二無水物65.5g(0.30モル)と
3,3',4,4'−ベンゾフェノンテトラカルボン酸二無
水物225.5g(0.70モル)とを2−ヒドロキシ
−1,3−ジメタクリロキシプロパン228.0g
(1.00モル)とメタノール32.0g(1.00モ
ル)でエステル化後、2,2−ビス〔4−(4−アミノ
フェノキシ)−フェニル〕プロパン369.5g(0.
9モル)をジシクロヘキシルカルボジイミドを縮合剤と
して、ポリアミド酸エステル共重合物を得た。ジシクロ
ヘキシルウレアを濾別後、エタノールにて再沈し、固形
物を濾過し減圧乾燥した。次に、このポリアミド酸エス
テル100重量部に、ミヒラーケトン(λmax365
nm)5重量部、テトラエチレングリコールジメタクリ
レート10重量部、トリメトキシシリルプロピルメタク
リレート3重量部及びメチルエーテルハイドロキノン
0.1重量部をN−メチルピロリドン300重量部、キ
シレン30重量部に溶解させ、感光性樹脂組成物を得
た。これを窒化膜(SiN)付シリコンウエハにスピン
ナーを用いて、硬化膜厚が5μmになるようにして塗布
した。更に硬化炉で窒素中150℃/30分、350℃
/60分硬化し、ポリイミド皮膜を得た。このフィルム
のSiN付シリコンウエハへの密着性をJIS−D−0
202に準じて測定したところ、プレッシャクッカーで
125℃/2.3気圧下にて48時間処理後も0/10
0(剥がれ数/総数)で高い密着性を示した。次に同様
な方法で別途作成したポリイミド皮膜付きウエハ上にE
ME−6300(住友ベークライト社製)エポキシ系封
止材料を金型を用いて、175℃、3分で成形し、2×
2×2mmの成形物を得た。この後175℃、8時間で
ポストベークした。この試験片をプレッシャクッカーに
て48時間処理し、更にテンシロン万能試験機を用いて
せん断密着力を測定した。密着力を2.8kg/mm2
と高い値を示した。評価結果を表1に示す。The present invention will be described in detail with reference to the following examples. Example 1 65.5 g (0.30 mol) of pyromellitic dianhydride and 225.5 g (0.70 mol) of 3,3 ′, 4,4′-benzophenone tetracarboxylic acid dianhydride were treated with 2-hydroxy. -1,3-Dimethacryloxypropane 228.0 g
(1.00 mol) with 32.0 g (1.00 mol) of methanol and then esterified with 36,95 g (0.2%) of 2,2-bis [4- (4-aminophenoxy) -phenyl] propane.
9 mol) was used as a condensing agent for dicyclohexylcarbodiimide to obtain a polyamic acid ester copolymer. After dicyclohexylurea was filtered off, it was reprecipitated with ethanol, and the solid substance was filtered and dried under reduced pressure. Next, 100 parts by weight of this polyamic acid ester was added to Michler's ketone (λmax 365).
nm) 5 parts by weight, tetraethylene glycol dimethacrylate 10 parts by weight, trimethoxysilylpropyl methacrylate 3 parts by weight, and methyl ether hydroquinone 0.1 parts by weight are dissolved in 300 parts by weight of N-methylpyrrolidone and 30 parts by weight of xylene, and exposed. A resin composition was obtained. This was applied to a silicon wafer with a nitride film (SiN) using a spinner so that the cured film thickness would be 5 μm. Furthermore, in a curing oven, 150 ° C / 30 minutes in nitrogen, 350 ° C
It was cured for 60 minutes to obtain a polyimide film. The adhesion of this film to a silicon wafer with SiN is determined by JIS-D-0
When measured according to 202, it was 0/10 even after treatment with a pressure cooker at 125 ° C./2.3 atmospheric pressure for 48 hours.
High adhesion was indicated by 0 (number of peeling / total number). Next, E on a wafer with a polyimide film, which was separately prepared by the same method,
ME-6300 (manufactured by Sumitomo Bakelite Co., Ltd.) epoxy-based encapsulating material was molded at 175 ° C. for 3 minutes using a mold, and 2 ×
A molded product of 2 × 2 mm was obtained. Then, post baking was performed at 175 ° C. for 8 hours. This test piece was treated with a pressure cooker for 48 hours, and the shear adhesion was measured using a Tensilon universal tester. Adhesion force of 2.8 kg / mm 2
And showed a high value. The evaluation results are shown in Table 1.
【0027】実施例2〜10 表1の配合に従い、実施例1と同一の反応を行ない実施
例1と同様の操作でポリアミド酸エステルを行ない実施
例1と同様の評価を行なった。その評価結果を表1に示
す。Examples 2 to 10 According to the formulations shown in Table 1, the same reaction as in Example 1 was carried out, the polyamic acid ester was carried out in the same manner as in Example 1, and the same evaluation as in Example 1 was carried out. The evaluation results are shown in Table 1.
【0028】比較例1 実施例1中の2,2−ビス〔4−(4−アミノフェノキ
シ)フェニル〕プロパンの代りに、4,4'−ジアミノジ
フェニルエーテル180.2g(0.9モル)で反応を
行ない、実施例1と同様の操作でポリアミド酸エステル
を得て、実施例1と同様の評価を行なった結果密着力は
0.7kg/mm2と低い値を示した。評価結果を表1
に示す。 比較例2 実施例1中の2,2−ビス〔4−(4−アミノフェノキ
シ)フェニル〕プロパンの代りに、2,2−ビス〔4−
(4−アミノフェノキシ)フェニル〕プロパン55.4
g(0.135モル)と4,4'−ジアミノジフェニルエ
ーテル153.2g(0.765モル)で反応を行な
い、実施例1同様の操作でポリアミド酸エステルを得
て、実施例1と同様の評価を行なった結果1.4kg/
mm2と低い値を示した。評価結果を表1に示す。Comparative Example 1 Instead of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in Example 1, 180.2 g (0.9 mol) of 4,4'-diaminodiphenyl ether was reacted. The polyamic acid ester was obtained in the same manner as in Example 1 and evaluated in the same manner as in Example 1. As a result, the adhesion was a low value of 0.7 kg / mm 2 . Table 1 shows the evaluation results
Shown in. Comparative Example 2 Instead of 2,2-bis [4- (4-aminophenoxy) phenyl] propane in Example 1, 2,2-bis [4-
(4-Aminophenoxy) phenyl] propane 55.4
g (0.135 mol) and 4,4'-diaminodiphenyl ether 153.2 g (0.765 mol) were reacted to obtain a polyamic acid ester by the same operation as in Example 1, and the same evaluation as in Example 1 was performed. The result was 1.4 kg /
The value was as low as mm 2 . The evaluation results are shown in Table 1.
【0029】[0029]
【表1】 [Table 1]
【0030】[0030]
【発明の効果】従来の感光性樹脂組成物は、高感度化や
Si等の基板とポリイミド間での接着性向上に対する発
明は多くみられた。しかしエポキシ系封止材料に対して
の密着性を向上させる手法はあまり知られていなかっ
た。シランカップリング剤の添加でエポキシ系封止材料
への密着性を向上させる報告もあるが、フィルム機械強
度を低下させる等の欠点がある。本発明はポリイミド構
造に、2,2−ビス〔4−(4−アミノフェノキシ)フ
ェニル)プロパンを導入することにより優れた感光性を
保持しつつ、硬化後の皮膜がSi等の基板及びエポキシ
系封止材料への密着性に優れ、吸湿処理後にも劣化のな
い感光性ポリイミド樹脂を得ることができる。In the conventional photosensitive resin composition, many inventions have been found for improving the sensitivity and improving the adhesiveness between the substrate such as Si and the polyimide. However, a method for improving the adhesion to the epoxy-based encapsulating material has not been well known. Although it has been reported that the addition of a silane coupling agent improves the adhesion to the epoxy-based encapsulating material, it has a drawback such as a decrease in mechanical strength of the film. The present invention maintains excellent photosensitivity by introducing 2,2-bis [4- (4-aminophenoxy) phenyl) propane into a polyimide structure, while the cured film has a substrate such as Si and an epoxy system. It is possible to obtain a photosensitive polyimide resin which has excellent adhesion to a sealing material and is not deteriorated even after a moisture absorption treatment.
フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/027 Continuation of front page (51) Int.Cl. 5 Identification code Office reference number FI technical display area H01L 21/027
Claims (1)
ルを主成分とする感光性樹脂組成物。 【化1】 【化2】 1. A photosensitive resin composition containing a polyamic acid ester represented by the formula (1) as a main component. [Chemical 1] [Chemical 2]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23860092A JPH0683054A (en) | 1992-09-07 | 1992-09-07 | Photosensitive resin composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23860092A JPH0683054A (en) | 1992-09-07 | 1992-09-07 | Photosensitive resin composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0683054A true JPH0683054A (en) | 1994-03-25 |
Family
ID=17032603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23860092A Pending JPH0683054A (en) | 1992-09-07 | 1992-09-07 | Photosensitive resin composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0683054A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006124630A (en) * | 2004-09-30 | 2006-05-18 | Sumitomo Bakelite Co Ltd | Resin composition, semiconductor device and display element, and methods for producing semiconductor device and display element |
| WO2021070232A1 (en) * | 2019-10-07 | 2021-04-15 | Hdマイクロシステムズ株式会社 | Polyimide precursor, resin composition, photosensitive resin composition, method for manufacturing patterned cured film, cured film, interlayer insulating film, cover coat layer, surface-protective film, and electronic component |
-
1992
- 1992-09-07 JP JP23860092A patent/JPH0683054A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006124630A (en) * | 2004-09-30 | 2006-05-18 | Sumitomo Bakelite Co Ltd | Resin composition, semiconductor device and display element, and methods for producing semiconductor device and display element |
| WO2021070232A1 (en) * | 2019-10-07 | 2021-04-15 | Hdマイクロシステムズ株式会社 | Polyimide precursor, resin composition, photosensitive resin composition, method for manufacturing patterned cured film, cured film, interlayer insulating film, cover coat layer, surface-protective film, and electronic component |
| CN114502617A (en) * | 2019-10-07 | 2022-05-13 | 艾曲迪微系统股份有限公司 | Polyimide precursor, resin composition, photosensitive resin composition, method for producing patterned cured film, interlayer insulating film, covercoat, surface protective film, and electronic component |
| CN114502617B (en) * | 2019-10-07 | 2024-05-03 | 艾曲迪微系统股份有限公司 | Polyimide precursor, photosensitive resin composition, interlayer insulating film, covercoat, surface protective film, and electronic component |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100533488B1 (en) | Positive photosensitive resin composition and semiconductor device using the same | |
| JP5415861B2 (en) | Photosensitive resin composition, pattern forming method, and semiconductor device | |
| US6319656B1 (en) | Photosensitive polyimide precursor and its use for pattern formation | |
| US4430418A (en) | Radiation-sensitive polyimide precursor composition derived from a diaryl fluoronated diamine compound | |
| EP0418870B1 (en) | Radiation sensitive polymer composition | |
| JPH1184645A (en) | Photosensitive resin composition | |
| JPH03186847A (en) | Photosensitive resin composition | |
| JP3342299B2 (en) | Photosensitive resin composition | |
| JPH0683054A (en) | Photosensitive resin composition | |
| JPH04116557A (en) | Pattern forming method of photosensitive resin composition | |
| JP3390303B2 (en) | Semiconductor device | |
| HK26488A (en) | Radiation-sensitive polyimide precursor composition derived from a diaryl fluoro compound | |
| JP2986970B2 (en) | Photosensitive resin composition | |
| JPH0827538B2 (en) | Photosensitive resin composition | |
| JP3132736B2 (en) | Manufacturing method of photosensitive resin | |
| JPH0827537B2 (en) | Photosensitive resin composition | |
| JP2693670B2 (en) | Photosensitive resin composition | |
| JP3462713B2 (en) | Semiconductor device, manufacturing method thereof, and surface protective film | |
| JP2809787B2 (en) | Photosensitive resin composition | |
| JPH06214390A (en) | Negative type photosensitive resin composition and its pattern forming method | |
| JPH05134406A (en) | Production of semiconductor device | |
| JP3407780B2 (en) | Photosensitive resin composition and pattern forming method thereof | |
| JP2809788B2 (en) | Photosensitive resin composition | |
| JP3339134B2 (en) | Actinic radiation sensitive polymer composition | |
| JP2809789B2 (en) | Photosensitive resin composition |