JPH0685437A - Cleaning method of electronic part - Google Patents
Cleaning method of electronic partInfo
- Publication number
- JPH0685437A JPH0685437A JP25738192A JP25738192A JPH0685437A JP H0685437 A JPH0685437 A JP H0685437A JP 25738192 A JP25738192 A JP 25738192A JP 25738192 A JP25738192 A JP 25738192A JP H0685437 A JPH0685437 A JP H0685437A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- gap
- gap part
- easier
- electronic component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000007788 liquid Substances 0.000 claims description 7
- 230000004907 flux Effects 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 6
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 238000013022 venting Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 239000002904 solvent Substances 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
- 235000007586 terpenes Nutrition 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007127 saponification reaction Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Cleaning By Liquid Or Steam (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、電子部品の洗浄方法に
関し、特に、フロン、エタン等のオゾン層破壊物質を使
用しない電子部品の洗浄方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning electronic parts, and more particularly to a method for cleaning electronic parts that does not use ozone depleting substances such as CFCs and ethane.
【0002】[0002]
【従来の技術】近年、フロン、エタン等の塩素系有機溶
剤によるオゾン層破壊が問題になり、その全廃が急がれ
ている。たとえば、ハイブリッドIC等の電子部品の洗
浄工程においても、上記の塩素系有機溶剤を使用してお
り、この塩素系有機溶剤を使用しないで洗浄する、いわ
ゆる代替洗浄方法の開発が急がれている。2. Description of the Related Art In recent years, the destruction of the ozone layer by chlorine-based organic solvents such as CFCs and ethane has become a problem, and the total abolition thereof is urgently required. For example, the chlorine-based organic solvent is used in the cleaning process of electronic parts such as hybrid ICs, and the development of a so-called alternative cleaning method for cleaning without using the chlorine-based organic solvent is urgently needed. .
【0003】現在、提案されている代替洗浄方法は、以
下に述べるものがある。 水洗浄 これは、水溶性フラックスを水により除去するものであ
る。 アルカリケン化 これは、ロジン(松脂)系フラックスをアルカリケン化
剤によって、一旦、水に溶解する物質にし、その後水で
すすぐものである。 準水系洗浄 これは、ロジン系フラックスを、炭化水素、テルペン、
高級アルコール、界面活性剤等の溶剤に溶かして除去
し、その後水ですすぐものである。このように、従来の
代替洗浄方法は、ほとんど水を用いて行うことになる。Currently proposed alternative cleaning methods are described below. Washing with water This is to remove the water-soluble flux with water. Alkali saponification This is a process in which a rosin (pine resin) -based flux is once dissolved in water by an alkali saponifying agent and then rinsed with water. Semi-aqueous cleaning This is a rosin-based flux for hydrocarbons, terpenes,
It is dissolved in a solvent such as higher alcohol or surfactant to remove it, and then rinsed with water. As described above, the conventional alternative cleaning method is mostly performed using water.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、たとえ
ば、ハイブリッドIC等の電子部品の基板とその基板上
の部品との隙間に入り込んだフラックスを洗浄する場合
には、上記の従来の代替洗浄方法では、フラックスを十
分洗浄しきれず、電子部品の絶縁性劣化などの品質問題
が生じるおそれがある。この理由としては、従来の代替
洗浄方法に使用する溶剤や水は、隙間部分へ入り込みに
くいということがあげられる。隙間に入りやすいかどう
かを表す物性値として、ヌレ指数がある。このヌレ指数
は、(1)式で表されるように、However, for example, when cleaning the flux that has entered the gap between the substrate of an electronic component such as a hybrid IC and the component on the substrate, the conventional alternative cleaning method described above is used. There is a risk that the flux cannot be cleaned sufficiently and quality problems such as deterioration of the insulation of electronic parts may occur. The reason for this is that it is difficult for the solvent and water used in the conventional alternative cleaning method to enter the gap. There is a Nure index as a physical property value that indicates whether or not it easily enters a gap. This Nure index is, as expressed by equation (1),
【0005】 ヌレ指数=(密度×1000)/(粘度×表面張力)
(1)Nudity index = (density × 1000) / (viscosity × surface tension)
(1)
【0006】密度、粘度、表面張力を組み合わせたもの
で、その値が大きいと隙間に入りやすくなるため、その
値を比較することにより、隙間部分の洗浄性が比較でき
る。すなわち、塩素系有機溶剤であるフロンR−113
が120、 1、1、1−トリクロロエタンが55であ
るのに対し、従来の代替洗浄方法に使用する溶剤や水
は、炭化水素およびテルペンが30〜40、高級アルコ
ール、界面活性剤が5〜20、水が15であり、従来の
代替洗浄方法に使用する溶剤や水のヌレ指数は、塩素系
有機溶剤のヌレ指数よりも小さい。したがって、従来の
代替洗浄方法に使用する溶剤や水は、塩素系有機溶剤に
比べて、隙間部分の洗浄性が劣り、電子部品の品質が低
下してしまうという不都合がある。This is a combination of density, viscosity and surface tension. If the value is large, it easily enters the gap. Therefore, by comparing the values, the cleanability of the gap can be compared. That is, Freon R-113 which is a chlorine-based organic solvent
Is 120, 1, 1, 1-trichloroethane, while the solvent and water used in the conventional alternative cleaning method are hydrocarbons and terpenes 30 to 40, higher alcohols and surfactants 5 to 20. , Water is 15, and the wetting index of the solvent or water used in the conventional alternative cleaning method is smaller than that of the chlorine-based organic solvent. Therefore, the solvent and water used in the conventional alternative cleaning method are inferior to the chlorine-based organic solvent in the cleaning property of the gap portion and the quality of the electronic component is deteriorated.
【0007】本発明は、電子部品の品質を低下させず
に、代替洗浄方法への移行を容易にすることのできる電
子部品の洗浄方法を提供することを目的にしている。An object of the present invention is to provide a method for cleaning electronic parts which can facilitate the transition to the alternative cleaning method without degrading the quality of the electronic parts.
【0008】[0008]
【課題を解決するための手段】本発明の電子部品の洗浄
方法は、上記目的を達成するために、洗浄液中に電子部
品を浸漬して、その電子部品を減圧または加圧下で洗浄
することを特徴とする。In order to achieve the above-mentioned object, a method of cleaning an electronic component according to the present invention comprises immersing the electronic component in a cleaning liquid and cleaning the electronic component under reduced pressure or pressure. Characterize.
【0009】[0009]
【作用】本発明の電子部品の洗浄方法は、上記のよう
に、電子部品を減圧または加圧下で洗浄することによ
り、電子部品の、たとえば、隙間部分への洗浄液の侵入
が容易になり、電子部品の洗浄性を高めることができ
る。According to the method of cleaning an electronic component of the present invention, as described above, by cleaning the electronic component under reduced pressure or pressure, it becomes easy for the cleaning liquid to enter the gap of the electronic component. The washability of parts can be improved.
【0010】[0010]
【実施例】以下、本発明の一実施例を図面を参照しつつ
詳述する。図1は本発明の一実施例の電子部品の洗浄方
法を説明するための図である。この図において、1は、
槽部2と蓋部3とから構成される密閉容器で、この密閉
容器1内に、従来の代替洗浄方法で使用した洗浄剤や水
等の洗浄液4が充填され、さらに、洗浄液4中には、ハ
イブリッドIC等の電子部品5が浸漬されている。この
電子部品5は、たとえば、基板6面上に部品7が搭載さ
れ、半田付け固定されたものである。この基板6と部品
7との間に隙間部分8が形成されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. FIG. 1 is a diagram for explaining a method of cleaning an electronic component according to an embodiment of the present invention. In this figure, 1 is
A closed container composed of a tank part 2 and a lid part 3, and the closed container 1 is filled with a cleaning liquid 4 such as a cleaning agent or water used in a conventional alternative cleaning method. , An electronic component 5 such as a hybrid IC is immersed. The electronic component 5 is, for example, a component 7 mounted on the surface of a substrate 6 and fixed by soldering. A gap portion 8 is formed between the substrate 6 and the component 7.
【0011】この隙間部分8には気泡9が形成される場
合が多く、槽部2の孔を通して密閉容器1内の気圧を、
たとえば、10〜100mmHg程度に減圧すれば、気
泡9が上昇しやすくなり、隙間部分8の気泡9が抜け
て、隙間部分へ洗浄液4が入り込み易くなる。したがっ
て、隙間部分8に付着したフラックスを取り除くことが
できる。Bubbles 9 are often formed in the gap portion 8, and the air pressure inside the closed container 1 is passed through the holes of the tank 2.
For example, if the pressure is reduced to about 10 to 100 mmHg, the bubbles 9 are likely to rise, the bubbles 9 in the gap portion 8 escape, and the cleaning liquid 4 easily enters the gap portion. Therefore, the flux attached to the gap portion 8 can be removed.
【0012】逆に、密閉容器1内の気圧を、たとえば、
1500mmHg程度に加圧すれば、隙間部分8の気泡
9の体積が小さくなり、その分、隙間部分8へ洗浄液4
が入り込み易くなる。したがって、隙間部分8に付着し
たフラックスを取り除くことができる。On the contrary, the atmospheric pressure in the closed container 1 is, for example,
If the pressure is increased to about 1500 mmHg, the volume of the bubbles 9 in the gap portion 8 becomes smaller, and the cleaning liquid 4 is added to the gap portion 8 by that amount.
Becomes easier to enter. Therefore, the flux attached to the gap portion 8 can be removed.
【0013】なお、上記実施例において、電子部品5
は、基板6に部品7を搭載したものであるが、この構成
に限定されるものではなく、いかなるものでもよい。ま
た、実施例では、密閉容器1内で減圧および加圧を行っ
たが、密閉容器内に限らず、たとえば、小室内に槽部2
を配置しておき、その小室内の気圧を減圧または加圧し
てもよい。In the above embodiment, the electronic component 5
The component 7 is mounted on the substrate 6, but the configuration is not limited to this, and any component may be used. Further, in the embodiment, depressurization and pressurization were performed in the closed container 1, but not limited to the closed container, for example, the tank portion 2 in a small chamber.
May be arranged and the atmospheric pressure in the small chamber may be reduced or increased.
【0014】[0014]
【発明の効果】本発明の電子部品の洗浄方法、以上述べ
たように、減圧または加圧下で洗浄することにより、電
子部品の洗浄性を高めることができる。したがって、電
子部品の品質を低下させずに、代替洗浄方法への移行を
容易にすることができる。As described above, the electronic component cleaning method of the present invention can enhance the cleaning performance of the electronic component by cleaning under reduced pressure or pressure. Therefore, the transition to the alternative cleaning method can be facilitated without degrading the quality of the electronic component.
【図1】本発明の電子部品の洗浄方法を説明するための
図である。FIG. 1 is a diagram for explaining a method of cleaning an electronic component according to the present invention.
1 密閉容器 2 槽部 3 蓋部 4 洗浄液 5 電子部品 6 基板 7 部品 8 隙間部分 9 気泡 1 Airtight container 2 Tank part 3 Lid part 4 Cleaning liquid 5 Electronic parts 6 Board 7 Parts 8 Gap part 9 Bubbles
Claims (1)
部品を減圧または加圧下で洗浄することを特徴とする電
子部品の洗浄方法。1. A method of cleaning an electronic component, which comprises immersing the electronic component in a cleaning liquid and cleaning the electronic component under reduced pressure or pressure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25738192A JPH0685437A (en) | 1992-08-31 | 1992-08-31 | Cleaning method of electronic part |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25738192A JPH0685437A (en) | 1992-08-31 | 1992-08-31 | Cleaning method of electronic part |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0685437A true JPH0685437A (en) | 1994-03-25 |
Family
ID=17305602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25738192A Pending JPH0685437A (en) | 1992-08-31 | 1992-08-31 | Cleaning method of electronic part |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0685437A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0818198A (en) * | 1994-06-29 | 1996-01-19 | Fuji Elelctrochem Co Ltd | Method of manufacturing thin film pattern |
| JP2017098302A (en) * | 2015-11-18 | 2017-06-01 | 浜松ホトニクス株式会社 | Electrode cleaning method and integrated circuit device manufacturing method |
| WO2022097530A1 (en) * | 2020-11-09 | 2022-05-12 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing device |
-
1992
- 1992-08-31 JP JP25738192A patent/JPH0685437A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0818198A (en) * | 1994-06-29 | 1996-01-19 | Fuji Elelctrochem Co Ltd | Method of manufacturing thin film pattern |
| JP2017098302A (en) * | 2015-11-18 | 2017-06-01 | 浜松ホトニクス株式会社 | Electrode cleaning method and integrated circuit device manufacturing method |
| WO2022097530A1 (en) * | 2020-11-09 | 2022-05-12 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing device |
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