JPH0687392B2 - Method for manufacturing electron-emitting device - Google Patents
Method for manufacturing electron-emitting deviceInfo
- Publication number
- JPH0687392B2 JPH0687392B2 JP63210445A JP21044588A JPH0687392B2 JP H0687392 B2 JPH0687392 B2 JP H0687392B2 JP 63210445 A JP63210445 A JP 63210445A JP 21044588 A JP21044588 A JP 21044588A JP H0687392 B2 JPH0687392 B2 JP H0687392B2
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- electron
- fine particles
- emitting device
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Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は電子放出素子に関し、更に詳しくは表面伝導形
電子放出素子の製造方法に関する。TECHNICAL FIELD The present invention relates to an electron-emitting device, and more particularly to a method for manufacturing a surface conduction electron-emitting device.
［開示の概要］ 本明細書及び図面は、表面伝導形電子放出素子の製造方
法において、一対の電極間に微粒子を含む薄膜導電体を
設け、通電加熱を施し電子放出部を形成することによ
り、島構造のバラツキや素子劣化等を改善する技術を開
示するものである。[Summary of Disclosure] The present specification and the drawings show that in a method of manufacturing a surface conduction electron-emitting device, a thin-film conductor containing fine particles is provided between a pair of electrodes, and an electron-emitting portion is formed by applying electric heating to form A technique for improving the variation of the island structure and the deterioration of the element is disclosed.
［従来の技術］ 従来、簡単な構造で電子の放出が得られる素子として、
例えば、エム アイ エリンソン（M.I.Elinson）等に
よって発表された冷陰極素子が知られている。［ラジオ
エンジニアリング エレクトロン フィジィツス（Ra
dio Eng. Electron. Phys.）第10巻、1290〜1296頁、19
65年］ これは、基板上に形成された小面積の薄膜に、膜面に平
行に電流を流すことにより、電子放出が生ずる現像を利
用するもので、一般には表面伝導形電子放出素子と呼ば
れている。[Prior Art] Conventionally, as an element that can emit electrons with a simple structure,
For example, a cold cathode device announced by MI Elinson is known. [Radio Engineering Electron Physics (Ra
dio Eng. Electron. Phys.) Volume 10, 1290-1296, 19
65 years] This utilizes development in which a small area thin film formed on a substrate causes electron emission by passing an electric current in parallel with the film surface, and is generally called a surface conduction electron-emitting device. Has been.
この表面伝導形電子放出素子としては、前記エリンソン
等により開発されたSnO2（Sb）薄膜を用いたもの、Au薄
膜によるもの［ジー・ディトマー“スイン ソリド フ
ィルムス”（G.Dittmer:“Thin Solid Films"）,9巻,31
7頁，（1972年）］、ITO薄膜によるもの［エム ハート
ウエル アンド シージーフォンスタッド“アイイーイ
ーイートランス”イーディーコンファレン（M.Hartwell
and C.G.Fonstad: “IEEE Trans.ED Conf."）519頁，
（1975）］、カーボン薄膜によるもの［荒木久他：“真
空",第26巻，第１号,22頁，（1983）］などが報告され
ている。The surface conduction electron-emitting device uses the SnO 2 (Sb) thin film developed by Elinson et al., And the Au thin film [G.Dittmer: “Thin Solid Films”]. Films "), 9 volumes, 31
Page 7, (1972)], by ITO thin film [M. Hartwell and Siegi Fonstad "IEEE TRANS" Edie Conference (M.Hartwell
and CGFonstad: “IEEE Trans.ED Conf.”) page 519,
(1975)], a carbon thin film [Hisashi Araki et al., "Vacuum", Vol. 26, No. 1, p. 22, (1983)] and the like.
これらの表面伝導形電子放出素子の典型的な素子構成を
第５図に示す。同図において、１および２は電気的接続
を得るための電極、３は電子放出材料で形成される薄
膜、４は基板、５は電子放出部を示す。A typical device configuration of these surface conduction electron-emitting devices is shown in FIG. In the figure, 1 and 2 are electrodes for obtaining electrical connection, 3 is a thin film formed of an electron emitting material, 4 is a substrate, and 5 is an electron emitting portion.
従来、これらの表面伝導形電子放出素子においては、電
子放出を行う前にあらかじめフォーミングと呼ばれる通
電加熱処理によって電子放出部を形成する。即ち、前記
電極１と電極２の間に電圧を印加する事により、薄膜３
に通電し、これにより発生するジュール熱で薄膜３を局
所的に破壊、変形もしくは変質せしめ、電気的に高抵抗
な状態にした電子放出部５を形成することにより電子放
出機能を得ている。Conventionally, in these surface conduction electron-emitting devices, an electron-emitting portion is formed in advance by an electric heating process called forming before the electron emission. That is, by applying a voltage between the electrodes 1 and 2, the thin film 3
The thin film 3 is locally destroyed, deformed or altered by the Joule heat generated thereby, and the electron emitting portion 5 in an electrically high resistance state is formed to obtain the electron emitting function.
なお、電気的に高抵抗状態とは、薄膜３の一部に0.5μ
ｍ〜５μｍの亀裂を有し、且つ亀裂内が所謂島構造を有
する不連続状態膜をいう。島構造とは一般に数十Åから
数μｍ径の微粒子が基板４にあり、各微粒子は空間的に
不連続で電気的に連続な膜をいう。Note that an electrically high resistance state means that a part of the thin film 3 has a thickness of 0.5 μm.
A discontinuous state film having a crack of m to 5 μm and having a so-called island structure inside the crack. The island structure generally refers to a film in which fine particles having a diameter of several tens of μm to several μm are present on the substrate 4, and each fine particle is spatially discontinuous and electrically continuous.
従来、表面伝導形電子放出素子は上述高抵抗不連続膜に
電極1,2により電圧を印加し、素子表面に電流を流すこ
とにより、上述微粒子より電子放出せしめるものであ
る。Conventionally, in a surface conduction electron-emitting device, a voltage is applied to the high resistance discontinuous film by electrodes 1 and 2 and a current is caused to flow on the surface of the device so that electrons are emitted from the fine particles.
［発明が解決しようとする課題］ しかしながら、上記の様な従来の通電加熱によるフォー
ミング処理によって製造された電子放出素子には、次の
ような問題点があった。[Problems to be Solved by the Invention] However, the above-described conventional electron-emitting device manufactured by the forming process by electric heating has the following problems.
１）電子放出部となる島構造の設計が不可能なため、素
子の改良が難しく、素子間のバラツキも生じやすい。1) Since it is impossible to design an island structure that serves as an electron-emitting portion, it is difficult to improve the elements and variations among the elements are likely to occur.
２）島構造の寿命が短かく且つ安定性が悪く、また外界
の電磁波ノイズにより素子破壊も生じやすい。2) The island structure has a short life and is poor in stability, and element damage is likely to occur due to external electromagnetic wave noise.
３）フォーミング工程の際に生じるジュール熱が大きい
ため、基板が破壊しやすくマルチ化が難しい。3) Since the Joule heat generated during the forming process is large, the substrate is easy to break, and it is difficult to make multiple substrates.
４）島の材料が金、銀、SnO2、ITO等に限定され仕事関
数の小さい材料が使えないため、大電流を得ることがで
きない。4) The material of the island is limited to gold, silver, SnO 2 , ITO, etc., and materials with a small work function cannot be used, so a large current cannot be obtained.
以上のような問題点があるため、表面伝導形電子放出素
子は、素子構造が簡単であるという利点があるにもかか
わらず、産業上積極的に応用されるには至ってはいなか
った。Due to the above-mentioned problems, the surface conduction electron-emitting device has not been positively applied industrially although it has an advantage that the device structure is simple.
本発明は、上記の様な従来例の欠点を除去した新規な電
子放出素子の製造方法を提供することを目的とする。It is an object of the present invention to provide a novel method for manufacturing an electron-emitting device that eliminates the above-mentioned drawbacks of the conventional example.
［課題を解決するための手段］ 本発明は対向する電極間に微粒子を含む薄膜導電体を設
け、この薄膜導電体に通電加熱（フォーミング）を施
し、上述島構造を有する不連続状態膜を形成して電子放
出部とすることにより、上記目的を達成するものであ
る。[Means for Solving the Problems] In the present invention, a thin film conductor containing fine particles is provided between opposing electrodes, and the thin film conductor is subjected to electric heating (forming) to form a discontinuous state film having the island structure. Then, the above-mentioned object is achieved by forming an electron-emitting portion.
本発明における島構造の微粒子は薄膜導電体内に含まれ
る微粒子と同一であり、この微粒子が電子放出部とな
る。また、この微粒子はガスディポジション法や分散塗
布法等により電極間に分散される。The fine particles having an island structure in the present invention are the same as the fine particles contained in the thin film conductor, and these fine particles serve as the electron emitting portion. Further, the fine particles are dispersed between the electrodes by a gas deposition method, a dispersion coating method or the like.
［作用］ 微粒子を含む薄膜導電体は、通電加熱により熱分解さ
れ、電極間には微粒子が形成されることになる。この方
法によれば、フォーミング時の熱量を少なくすることが
できるため、膜割れや基板割れを防止することができ
る。また、島材の選択が可能となり、且つ島構造の形成
が安定するため、制御性もより向上させることができ
る。[Function] The thin-film conductor containing fine particles is thermally decomposed by electric heating and fine particles are formed between the electrodes. According to this method, the amount of heat at the time of forming can be reduced, so that film cracking or substrate cracking can be prevented. In addition, since the island material can be selected and the island structure is stably formed, the controllability can be further improved.
［実施例］ 実施例１ 第１図は本発明における電子放出素子の構成図であっ
て、通電加熱前の状態を示したものである。Example 1 Example 1 FIG. 1 is a configuration diagram of an electron-emitting device according to the present invention, showing a state before energization heating.
図中、６は、ガラスもしくは石英等の基板、９は微粒子
を含む薄膜導電体膜、７および８は前記薄膜導電体膜９
に電流を流すための電極である。In the figure, 6 is a substrate such as glass or quartz, 9 is a thin film conductor film containing fine particles, 7 and 8 are the thin film conductor film 9
It is an electrode for passing an electric current to.
次に、本実施例における電子放出素子の製造方法を説明
する。Next, a method of manufacturing the electron-emitting device according to this embodiment will be described.
石英の基板６表面の脱脂及び洗浄を行う。 The surface of the quartz substrate 6 is degreased and washed.
基板６の表面に、通常よく用いられる真空成膜プロ
セスとフォトリソプロセスによりNiの電極7,8を形成す
る。電極材としては、一般的な導電性材料、Au,Pt,Ag等
の金属の他、SnO2,ITO等の酸化物導電性材料でも使用で
きる。電極7,8の厚みは数100Åから数μｍ程度が適当で
あるが、この数値に限るものではない。また電極間隔Ｌ
の寸法は電極対向間隔が数μｍから数100μｍが適当で
あり、本実施例においては５μｍとした。一方、間隔幅
Ｗは数μｍから数mm程度が適当であり、本実施例におい
ては500μｍとした。ただし、このＬおよびＷの寸法
は、いずれも上記数値に限るものではない。Ni electrodes 7 and 8 are formed on the surface of the substrate 6 by a vacuum film forming process and a photolithography process which are commonly used. As the electrode material, a general conductive material, a metal such as Au, Pt, or Ag, or an oxide conductive material such as SnO 2 or ITO can be used. It is suitable that the thickness of the electrodes 7 and 8 is several hundred liters to several μm, but the thickness is not limited to this value. Also, the electrode spacing L
It is suitable that the distance between the electrodes is several μm to several hundred μm, and in this embodiment, it is set to 5 μm. On the other hand, the interval width W is suitably several μm to several mm, and in this embodiment, it is 500 μm. However, the dimensions of L and W are not limited to the above numerical values.
次に前記で得た電極ギャップ部へ微粒子を塗布し
薄膜導電体９を形成する。塗布には微粒子の分散液を用
いる。酢酸ブチルやアルコール等から成る有機溶剤に、
微粒子及び微粒子の分散を促進する添加剤を加え、撹拌
等により微粒子の分散液を調整する。この微粒子分散液
を資料表面にディッピングやスピンコート等の方法によ
り塗布し、溶媒等が蒸発する温度、例えば250℃で10分
程度仮焼成を行う。これにより微粒子が電極間隔Ｌ中の
絶縁基板６の表面に配置される。もちろん微粒子は試料
全面に配置されるが、電子放出に際し電極間隔Ｌ部以外
の微粒子は実質的に電圧が印加されないため、何ら支障
をきたさない。また、微粒子の配置密度は塗布条件、及
び微粒子分散液の調整により変化し、これに合わせて電
極間隔Ｌに流れる電流量も変化する。Next, fine particles are applied to the electrode gap portion obtained above to form the thin film conductor 9. A fine particle dispersion is used for coating. For organic solvents such as butyl acetate and alcohol,
Fine particles and an additive that promotes dispersion of fine particles are added, and a dispersion liquid of fine particles is prepared by stirring or the like. This fine particle dispersion is applied to the surface of the material by a method such as dipping or spin coating, and pre-baked at a temperature at which the solvent or the like evaporates, for example, 250 ° C. for about 10 minutes. As a result, the fine particles are arranged on the surface of the insulating substrate 6 in the electrode space L. Of course, the fine particles are arranged on the entire surface of the sample, but since no voltage is substantially applied to the fine particles other than the electrode interval L portion during electron emission, there is no problem. The arrangement density of the fine particles changes depending on the coating conditions and the adjustment of the fine particle dispersion liquid, and the amount of current flowing through the electrode interval L also changes accordingly.
本実施例における微粒子材料としては、粒径1000Å以下
のSnO2微粒子を用いたが、これ以外の材料を用いること
もできる。具体的には、LaB6，CeB6，YB4，GdB4などの
硼化物、TiC,ZrC,HfC,TaC,SiC,Wcなどの炭化物、TiN,Zr
N,HfNなどの窒化物、Nb,Mo,Rh,Hf,Ta,W,Re,Ir,Pt,Ti,A
u,Ag,Cu,Cr,Al.Co,Ni,Fe,Pb,Pd,Cs,Baなどの金属、In2O
3，SuO2，Sb2O3などの金属酸化物、Si,Geなどの半導
体、カーボン、AgMgなどを一例として挙げることができ
る。なお本発明は上記材料に限定されるものではない。As the fine particle material in the present embodiment, SnO 2 fine particles having a particle diameter of 1000 Å or less were used, but other materials can also be used. Specifically, LaB 6, CeB 6, YB 4, borides such GdB 4, TiC, ZrC, HfC , TaC, SiC, carbides such as Wc, TiN, Zr
N, HfN and other nitrides, Nb, Mo, Rh, Hf, Ta, W, Re, Ir, Pt, Ti, A
u, Ag, Cu, Cr, Al.Co, Ni, Fe, Pb, Pd, Cs, Ba and other metals, In 2 O
As examples, metal oxides such as 3 , SuO 2 , and Sb 2 O 3 , semiconductors such as Si and Ge, carbon, AgMg, and the like can be given. The present invention is not limited to the above materials.
本実施例における分散液としては、微粒子（SnO2,1.0
g）、有機溶媒（MEK（メチルエチルケトン）：シクロヘ
キサン＝3:1,800cc）の各材料をガラスビーズと共にペ
イントシェーカーで24時間攪拌し、分散液とした。The dispersion liquid in this example includes fine particles (SnO 2 , 1.0
g) and each material of the organic solvent (MEK (methyl ethyl ketone): cyclohexane = 3: 1,800 cc) were stirred with a glass bead for 24 hours on a paint shaker to prepare a dispersion liquid.
本実施例における、薄膜導電体膜９は、上記分散液を一
般に良く用いられるディピング法やスピナー法等の分散
塗布法により形成した。この時シート抵抗が数10KΩ以
下の抵抗値になるように形成した。The thin-film conductor film 9 in this example was formed by a dispersion coating method such as a dipping method or a spinner method, which is commonly used for the above-mentioned dispersion liquid. At this time, the sheet resistance was formed to have a resistance value of several tens of KΩ or less.
次に、真空度１×10-5Torrの環境において電極7,8
に電圧を印加し、薄膜導電体膜９に通電する。電圧を上
昇させると、薄膜導電体膜９に流れる電流が増加し、電
極7,8間の薄膜導電体膜９がジュール熱により破壊する
（フォーミング工程）。このようなフォーミング工程後
の素子の概略を第２図に示す。第２図において、10はフ
ォーミング工程により形成されたSnO2微粒子を島とする
不連続膜である。以上の工程により作製された素子を10
-5Torr以上の真空下に置き、先に述べたように電極7,8
間に電圧を印加し、素子上面に設けられた引き出し電極
（図示せず）で電子を引き出したところ、安定した電子
放出が確認された。Next, in an environment with a vacuum of 1 × 10 -5 Torr, the electrodes 7,8
A voltage is applied to the thin film conductor film 9 to energize it. When the voltage is increased, the current flowing through the thin film conductor film 9 increases, and the thin film conductor film 9 between the electrodes 7 and 8 is destroyed by Joule heat (forming step). An outline of the element after such a forming step is shown in FIG. In FIG. 2, reference numeral 10 is a discontinuous film having islands of SnO 2 fine particles formed by the forming process. The device manufactured by the above process
Place under a vacuum of -5 Torr or higher and use electrodes 7,8 as described above.
When a voltage was applied between them and electrons were extracted by an extraction electrode (not shown) provided on the upper surface of the device, stable electron emission was confirmed.
従来のフォーミングによる素子の作成においては、全く
電子放出を示さないものや、数10％も特性がばらつく例
が多かったが、この方法によって作成した素子では、素
子間のばらつきが非常に小さく24Vの電圧印加で平均放
出電流1.2μＡ（±10％）が安定に得られた。しかも、
この特性を10時間以上も維持し、寿命の点でも向上して
いることがわかった。また微粒子径や塗布条件を変化さ
せると、それぞれの条件に応じて放出電流の異なる素子
が再現良く作製できた。In the conventional fabrication of devices by forming, there were many cases in which no electron emission was shown or the characteristics varied by several tens of percent. An average emission current of 1.2 μA (± 10%) was stably obtained by applying a voltage. Moreover,
It was found that this property was maintained for more than 10 hours, and the life was also improved. When the particle diameter and the coating conditions were changed, devices with different emission currents could be produced with good reproducibility according to the respective conditions.
また、フォーミング工程の際に発生するジュール熱も従
来と比べ数分の一程度であり、基板や電極に破損のない
素子が作製できた。In addition, the Joule heat generated during the forming process is about a fraction of that of the conventional one, and an element having no damage on the substrate or the electrode could be manufactured.
実施例２ 第３図は、本発明の第２の実施例における電子放出素子
の構成図であって、通電加熱前の状態を示したものであ
る。図中、11は本実施例における微粒子を含む薄膜導電
体膜である。他の構成は前記実施例１と同様であり、基
板６上に電極7,8を形成する。このとき、電極間隔Ｌは
５μｍ、電極幅Ｗは10mmとした。Second Embodiment FIG. 3 is a configuration diagram of an electron-emitting device according to the second embodiment of the present invention, showing a state before energization and heating. In the figure, 11 is a thin film conductor film containing fine particles in this embodiment. The other structure is similar to that of the first embodiment, and the electrodes 7 and 8 are formed on the substrate 6. At this time, the electrode interval L was 5 μm and the electrode width W was 10 mm.
次に、超微粒子の製膜法として広く知られているガスデ
ポジション法（「粉体と工業」Vol.19,No.5,1987）によ
り、0.1μｍ以下の銀微粒子で薄膜導電体膜11をを形成
する。ガスディポジション法は、粒径が0.1μｍ以下の
きわめて小さな粒子による製膜が可能であり、材料とし
ては、銀以外に金、銅、ニッケルなどの様々な金属材料
により製膜できる。薄膜導電体膜11の幅Ｗは2mmに形成
した。Next, by a gas deposition method (“Powder and Industry”, Vol.19, No.5, 1987) widely known as a method for forming ultrafine particles, thin film conductor film 11 with 0.1 μm or less of silver particles is used. To form. The gas deposition method is capable of forming a film with extremely small particles having a particle size of 0.1 μm or less, and as a material, various metal materials such as gold, copper, nickel and the like can be formed as a material. The width W of the thin conductor film 11 was formed to be 2 mm.
次に、実施例１と同様にフォーミング工程後、第４図に
示すように電子放出素子を形成した。第４図において、
12はフォーミング工程により形成された銀微粒子を島と
する不連続膜である。Next, after the forming process as in Example 1, an electron-emitting device was formed as shown in FIG. In FIG.
Reference numeral 12 is a discontinuous film having islands of fine silver particles formed by the forming process.
上述した電子放出素子において、実施例１と同様に特性
を評価したところ、同様な結果が得られた。When the characteristics of the above-mentioned electron-emitting device were evaluated in the same manner as in Example 1, similar results were obtained.
また、実施例１の分散塗布法による電子放出素子はその
製造時に有機溶剤が介在しているが、本実施例における
電子放出素子は、微粒子のみで素子が製造できる。一般
に、素子に残存する有機溶剤は、素子を駆動したときの
次のような問題を引き起こすものと考えられている。Further, although the electron-emitting device according to the dispersion coating method of Example 1 has an organic solvent interposed at the time of its manufacture, the electron-emitting device according to this example can be manufactured with only fine particles. It is generally considered that the organic solvent remaining in the element causes the following problems when the element is driven.
有機溶剤が分解し、ハイドロカーボン等の炭化物質
が表面上に析出し、特性を劣化させる。The organic solvent is decomposed and carbonized substances such as hydrocarbons are deposited on the surface to deteriorate the characteristics.
有機溶剤が分解イオン化し、このイオンが電子放出
部に衝突することにより、電子放出特性を劣化させる。The organic solvent is decomposed and ionized, and the ions collide with the electron emission portion, thereby deteriorating the electron emission characteristics.
本実施例のガスディポジション法によって形成された素
子は、分解塗布法によってつくられた素子に比べてこの
ような欠点がなく、良好な特性が得られた。The element formed by the gas deposition method of the present example does not have such a defect as compared with the element formed by the decomposition coating method, and excellent characteristics are obtained.
実施例３ 前記実施例１で説明した素子において、微粒子材料とし
てSnO2とAuを混合した微粒子分散液を用いた。混合割合
はモル比でAu:SnO2＝2:1とした。他の構成及び作製手順
は実施例１と同様である。Example 3 In the device described in Example 1, a fine particle dispersion liquid in which SnO 2 and Au were mixed was used as the fine particle material. The mixing ratio was Au: SnO 2 = 2: 1 in terms of molar ratio. Other configurations and manufacturing procedures are similar to those of the first embodiment.
本実施例では、SnO2が電子放出に係る微粒子となり、Au
が電極間の導電を得るための微粒子となる。In this example, SnO 2 becomes fine particles related to electron emission,
Become fine particles for obtaining conductivity between the electrodes.
本素子は、フォーミング前の素子抵抗が低く、フォーミ
ング時の素子電圧を低くすることができるため、フォー
ミングによる素子劣化を最小限に抑えることができる。
また、本実施例の素子は、下記表１に示すように実施例
１の素子に比べ、同じ放出電流を得る場合の素子電圧を
低くすることができた。Since this element has low element resistance before forming and can reduce element voltage during forming, element deterioration due to forming can be minimized.
Further, as shown in Table 1 below, the device of this example was able to lower the device voltage when the same emission current was obtained, as compared with the device of example 1.
［発明の効果］ 以上説明したように、本発明によれば、対向する電極間
に微粒子を含む薄膜導電体を設け、この薄膜導電体に通
電加熱（フォーミング）を施し、前記微粒子による不連
続膜を形成することにより、次のような効果が得られ
る。 [Effects of the Invention] As described above, according to the present invention, a thin film conductor containing fine particles is provided between opposing electrodes, and the thin film conductor is subjected to electric heating (forming) to form a discontinuous film of the fine particles. By forming the, the following effects are obtained.
１）島構造の設計が可能となり、素子間のバラツキも従
来に比べ非常に少なくすることができる。1) It becomes possible to design an island structure, and the variation between elements can be greatly reduced compared to the conventional one.
２）島構造の寿命を向上させ、且つ安定した放出電流が
得られる。2) The life of the island structure is improved and a stable emission current can be obtained.
３）膜割れや、基板割れを生じにくい。3) Film cracks and substrate cracks are less likely to occur.
４）不連続膜の島の材料の選択が可能となる。4) It becomes possible to select the material of the island of the discontinuous film.
第１図及び第２図は第１の実施例を示す図、第３図及び
第４図は第２の実施例を示す図、第５図は素子の典型的
な構成図である。 1,2,7,8……電極 ３……薄膜、4,6……基板 9,11……薄膜導電体膜、10,12……不連続膜1 and 2 are diagrams showing the first embodiment, FIGS. 3 and 4 are diagrams showing the second embodiment, and FIG. 5 is a typical constitutional view of the element. 1,2,7,8 …… electrodes 3 …… thin film, 4,6 …… substrate 9,11 …… thin film conductor film, 10,12 …… discontinuous film
Claims (5)
を設け、該薄膜導電体に通電加熱を施すことにより、電
子放出部を形成する電子放出素子の製造方法。1. A method of manufacturing an electron-emitting device, wherein an electron-emitting portion is formed by providing a thin-film conductor film containing fine particles between a pair of electrodes and heating the thin-film conductor with electricity.
第１項記載の電子放出素子の製造方法。2. The method for producing an electron-emitting device according to claim 1, wherein the thin film conductor is a film containing conductive fine particles.
極間に分散させた第１項記載の電子放出素子の製造方
法。3. The method for manufacturing an electron-emitting device according to claim 1, wherein the fine particles are dispersed between the electrodes by a gas deposition method.
第１項記載の電子放出素子の製造方法。4. The method for manufacturing an electron-emitting device according to claim 1, wherein the fine particles are dispersed between the electrodes by coating.
微粒子と、前記一対の電極間に電流を流す微粒子との混
合微粒子からなる第１項記載の電子放出素子の製造方
法。5. The method of manufacturing an electron-emitting device according to claim 1, wherein the thin-film conductor is composed of mixed particles of at least particles for electron emission and particles for passing an electric current between the pair of electrodes.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63210445A JPH0687392B2 (en) | 1988-05-02 | 1988-08-26 | Method for manufacturing electron-emitting device |
| US07/345,173 US5023110A (en) | 1988-05-02 | 1989-05-01 | Process for producing electron emission device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63-107570 | 1988-05-02 | ||
| JP10757088 | 1988-05-02 | ||
| JP63210445A JPH0687392B2 (en) | 1988-05-02 | 1988-08-26 | Method for manufacturing electron-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0256822A JPH0256822A (en) | 1990-02-26 |
| JPH0687392B2 true JPH0687392B2 (en) | 1994-11-02 |
Family
ID=26447592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63210445A Expired - Lifetime JPH0687392B2 (en) | 1988-05-02 | 1988-08-26 | Method for manufacturing electron-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0687392B2 (en) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5470265A (en) * | 1993-01-28 | 1995-11-28 | Canon Kabushiki Kaisha | Multi-electron source, image-forming device using multi-electron source, and methods for preparing them |
| US6313815B1 (en) | 1991-06-06 | 2001-11-06 | Canon Kabushiki Kaisha | Electron source and production thereof and image-forming apparatus and production thereof |
| CA2080092C (en) | 1991-10-08 | 1999-03-23 | Ichiro Nomura | Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device |
| AU655677B2 (en) | 1991-10-08 | 1995-01-05 | Canon Kabushiki Kaisha | Electron-emitting device, and electron beam-generating apparatus and image-forming apparatus employing the device |
| JP3072795B2 (en) * | 1991-10-08 | 2000-08-07 | キヤノン株式会社 | Electron emitting element, electron beam generator and image forming apparatus using the element |
| CA2112431C (en) * | 1992-12-29 | 2000-05-09 | Canon Kabushiki Kaisha | Electron source, and image-forming apparatus and method of driving the same |
| CA2112733C (en) * | 1993-01-07 | 1999-03-30 | Naoto Nakamura | Electron beam-generating apparatus, image-forming apparatus, and driving methods thereof |
| US5505647A (en) * | 1993-02-01 | 1996-04-09 | Canon Kabushiki Kaisha | Method of manufacturing image-forming apparatus |
| JP3205167B2 (en) * | 1993-04-05 | 2001-09-04 | キヤノン株式会社 | Method of manufacturing electron source and method of manufacturing image forming apparatus |
| JP3062990B2 (en) * | 1994-07-12 | 2000-07-12 | キヤノン株式会社 | Electron emitting device, method of manufacturing electron source and image forming apparatus using the same, and device for activating electron emitting device |
| JP3072825B2 (en) * | 1994-07-20 | 2000-08-07 | キヤノン株式会社 | Electron emitting element, electron source, and method of manufacturing image forming apparatus |
| JP3241251B2 (en) | 1994-12-16 | 2001-12-25 | キヤノン株式会社 | Method of manufacturing electron-emitting device and method of manufacturing electron source substrate |
| JP3352385B2 (en) | 1997-03-21 | 2002-12-03 | キヤノン株式会社 | Electron source substrate and method of manufacturing electronic device using the same |
| US6220912B1 (en) | 1997-05-09 | 2001-04-24 | Canon Kabushiki Kaisha | Method and apparatus for producing electron source using dispenser to produce electron emitting portions |
| JPH1125851A (en) | 1997-05-09 | 1999-01-29 | Canon Inc | Electron source, manufacturing method and manufacturing apparatus thereof, image forming apparatus and manufacturing method thereof |
| JP3169926B2 (en) | 1998-02-13 | 2001-05-28 | キヤノン株式会社 | Manufacturing method of electron source |
| JP4541560B2 (en) | 1999-02-08 | 2010-09-08 | キヤノン株式会社 | Electronic device, electron source, and method of manufacturing image forming apparatus |
| JP3530796B2 (en) | 1999-03-05 | 2004-05-24 | キヤノン株式会社 | Image forming device |
| CN1215517C (en) | 2001-08-02 | 2005-08-17 | 佳能株式会社 | Electron source and mfg. method thereof |
| JP3728281B2 (en) | 2001-08-28 | 2005-12-21 | キヤノン株式会社 | Electron source substrate and image forming apparatus |
| US7188919B2 (en) | 2002-07-08 | 2007-03-13 | Canon Kabushiki Kaisha | Liquid discharge method and apparatus using individually controllable nozzles |
| US7111755B2 (en) | 2002-07-08 | 2006-09-26 | Canon Kabushiki Kaisha | Liquid discharge method and apparatus and display device panel manufacturing method and apparatus |
| JP2008257912A (en) | 2007-04-02 | 2008-10-23 | Canon Inc | Electron beam equipment |
| JP2008257913A (en) | 2007-04-02 | 2008-10-23 | Canon Inc | Electron beam equipment |
| JP2010102030A (en) | 2008-10-22 | 2010-05-06 | Canon Inc | Light emitting device, and image display device using the same |
| JP2010262852A (en) | 2009-05-08 | 2010-11-18 | Canon Inc | LIGHT-EMITTING SUBSTRATE PROVIDED WITH LIGHT-EMITTING MEMBER AND IMAGE DISPLAY DEVICE PROVIDED WITH THE LIGHT-EMITTING SUBSTRATE |
| JP2011033877A (en) | 2009-08-03 | 2011-02-17 | Canon Inc | Method for determining correction value |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60113971A (en) * | 1983-11-26 | 1985-06-20 | Matsushita Electric Ind Co Ltd | Thin-film field-effect type semiconductor device and manufacture thereof |
-
1988
- 1988-08-26 JP JP63210445A patent/JPH0687392B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0256822A (en) | 1990-02-26 |
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