JPH0687468B2 - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor deviceInfo
- Publication number
- JPH0687468B2 JPH0687468B2 JP62111254A JP11125487A JPH0687468B2 JP H0687468 B2 JPH0687468 B2 JP H0687468B2 JP 62111254 A JP62111254 A JP 62111254A JP 11125487 A JP11125487 A JP 11125487A JP H0687468 B2 JPH0687468 B2 JP H0687468B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- pellet
- frame
- manufacturing semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 238000000034 method Methods 0.000 title description 8
- 238000004519 manufacturing process Methods 0.000 title description 5
- 229920005989 resin Polymers 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 25
- 239000008188 pellet Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000465 moulding Methods 0.000 claims description 5
- 239000004593 Epoxy Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の製造方法に関し、特にプラスチッ
ク ピン グリッド アレイ型パッケージを有する半導
体装置の樹脂封止方法に関する。The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a resin sealing method for a semiconductor device having a plastic pin grid array type package.
従来、プラスチック ピン グリッド アレイ型パッケ
ージを用いた半導体装置の製造工程において、半導体ペ
レット（以下単にペレットという）の樹脂封止は次のよ
うな方法により行なわれていた。Conventionally, in a manufacturing process of a semiconductor device using a plastic pin grid array type package, resin sealing of a semiconductor pellet (hereinafter simply referred to as pellet) has been performed by the following method.
すなわち第２図に示すように、配線等が形成された基板
７上にペレット６を固着したのち、配線とペレット６と
を金属細線により接続する。次にペレット６を囲んでAl
等からなる枠２を設け、この枠２内にエポキシ樹脂11A
を注入して硬化させる。続いてAl等からなるキャップ10
にエポキシ樹脂11Bを注入し、このキャップ10を枠２の
上にかぶせ内部のエポキシ樹脂11Bを硬化させて封止を
完了する。That is, as shown in FIG. 2, after the pellet 6 is fixed on the substrate 7 on which the wiring and the like are formed, the wiring and the pellet 6 are connected by a thin metal wire. Next, surround the pellet 6 and
A frame 2 made of, etc. is provided, and the epoxy resin 11A is placed in the frame 2.
Inject and cure. Next, cap 10 made of Al, etc.
Then, the epoxy resin 11B is injected into the container, the cap 10 is placed on the frame 2, and the epoxy resin 11B inside is cured to complete the sealing.
上述した従来の樹脂の封止方法では、キャップ10中の樹
脂の量を一定に保つことが難しく、またキャップ10をか
ぶせた時に樹脂がはみ出し外観を悪化させたり、またキ
ャップ内に気泡が残り半導体装置の耐湿性を低下させる
という欠点があった。In the conventional resin sealing method described above, it is difficult to keep the amount of the resin in the cap 10 constant, and when the cap 10 is covered, the resin protrudes and deteriorates the appearance, and bubbles remain in the cap of the semiconductor. There is a drawback that the moisture resistance of the device is lowered.
本発明の目的は、耐湿性の向上した半導体装置の製造方
法を提供することにある。An object of the present invention is to provide a method for manufacturing a semiconductor device having improved moisture resistance.
本発明の半導体装置の製造方法は、ガラスエポキシ基板
上に搭載された半導体ペレットの周囲を枠でかこみ、こ
の枠内に第１の樹脂を注入して半導体ペレットを封止す
る工程と、前記ガラスエポキシ基板を成型治具の上型お
よび下型ではさみ第２の樹脂を注入して前記第１の樹脂
で封止された前記半導体ペレットを封止する工程とを含
んで構成される。A method of manufacturing a semiconductor device according to the present invention comprises a step of surrounding a semiconductor pellet mounted on a glass epoxy substrate with a frame, injecting a first resin into the frame to seal the semiconductor pellet, And a step of injecting a second resin into the upper and lower molds of a molding jig to seal the semiconductor pellet sealed with the first resin.
次に、本発明の実施例について図面を参照して説明す
る。Next, embodiments of the present invention will be described with reference to the drawings.
第１図（ａ），（ｂ）は本発明の一実施例を説明するた
めの工程順に示した治具及び半導体装置の断面図であ
る。1A and 1B are cross-sectional views of a jig and a semiconductor device, which are shown in the order of steps for explaining an embodiment of the present invention.
まず第１図（ａ）に示すように、従来と同じ工程により
配線等が形成されたガラスエポキシからなる基板７上に
ペレット６を固着し、その周囲をAl等からなる枠２で囲
みこの中に第１の樹脂３としてエポキシ樹脂を注入し封
止する。First, as shown in FIG. 1 (a), a pellet 6 is fixed on a substrate 7 made of glass epoxy in which wiring and the like are formed by the same process as in the conventional case, and the periphery thereof is surrounded by a frame 2 made of Al or the like. Then, epoxy resin is injected as the first resin 3 and sealed.
次にこの第１の樹脂３で封止されたペレット６を成形治
具の下型７の上にのせて上型１をかぶせ、注入口９より
第２の樹脂８としてエポキシ樹脂を注入する。Next, the pellet 6 sealed with the first resin 3 is placed on the lower mold 7 of the molding jig, the upper mold 1 is covered, and an epoxy resin is injected from the injection port 9 as the second resin 8.
次に第１図（ｂ）に示すように、第２の樹脂８を硬化さ
せたのち上型１及び下型７からとり出し半導体装置の成
型による樹脂封止を終了させる。Next, as shown in FIG. 1 (b), after the second resin 8 is cured, it is taken out from the upper mold 1 and the lower mold 7, and the resin sealing by molding of the semiconductor device is completed.
このようにして形成された半導体装置においては、第１
の樹脂３上に第２の樹脂８が密着して形成されているた
め耐湿性は向上する。In the semiconductor device thus formed, the first
Since the second resin 8 is formed in close contact with the resin 3 of No. 3, the moisture resistance is improved.
尚、上記実施例においては第１及び第２の樹脂としてエ
ポキシ樹脂を用いた場合について説明したが、シリコン
樹脂等他の耐湿性樹脂を用いることができる。Although the case where the epoxy resin is used as the first and second resins has been described in the above embodiment, other moisture resistant resin such as silicon resin can be used.
以上説明したように本発明は、基板上に固着されたペレ
ットを第１の樹脂で封止したのち、更に成型法により第
２の樹脂で封止することにより、半導体装置の耐湿性を
向上させるとができる効果がある。As described above, the present invention improves the moisture resistance of the semiconductor device by sealing the pellets fixed on the substrate with the first resin and further sealing with the second resin by the molding method. There is an effect that can be.
第１図（ａ），（ｂ）は、本発明の一実施例を説明する
ための半導体装置の断面図、第２図は従来の半導体装置
の一例の断面図である。 １…上型、２…枠、３…第１の樹脂、４…基板、６…ペ
レット、７…下型、８…第２の樹脂、９…注入口、10…
キャップ、11A,11B…エポキシ樹脂。1 (a) and 1 (b) are sectional views of a semiconductor device for explaining an embodiment of the present invention, and FIG. 2 is a sectional view of an example of a conventional semiconductor device. 1 ... Upper mold, 2 ... Frame, 3 ... First resin, 4 ... Substrate, 6 ... Pellet, 7 ... Lower mold, 8 ... Second resin, 9 ... Injection port, 10 ...
Cap, 11A, 11B ... Epoxy resin.
Claims (1)
ペレットの周囲を枠でかこみ、この枠内に第１の樹脂を
注入して半導体ペレットを封止する工程と、前記ガラス
エポキシ基板を成型治具の上型および下型ではさみ第２
の樹脂を注入して前記第１の樹脂で封止された前記半導
体ペレットを封止する工程とを含むことを特徴とする半
導体装置の製造方法。1. A step of encapsulating a semiconductor pellet mounted on a glass epoxy substrate with a frame, injecting a first resin into the frame to seal the semiconductor pellet, and molding and curing the glass epoxy substrate. Second scissors for upper and lower molds
And a step of injecting the resin to seal the semiconductor pellet sealed with the first resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62111254A JPH0687468B2 (en) | 1987-05-06 | 1987-05-06 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62111254A JPH0687468B2 (en) | 1987-05-06 | 1987-05-06 | Method for manufacturing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63274152A JPS63274152A (en) | 1988-11-11 |
| JPH0687468B2 true JPH0687468B2 (en) | 1994-11-02 |
Family
ID=14556522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62111254A Expired - Lifetime JPH0687468B2 (en) | 1987-05-06 | 1987-05-06 | Method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0687468B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2723195B2 (en) * | 1990-12-14 | 1998-03-09 | 松下電工株式会社 | Semiconductor package |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5833857A (en) * | 1981-08-21 | 1983-02-28 | Nec Corp | Semiconductor device |
| JPS58165334A (en) * | 1982-03-25 | 1983-09-30 | Nitto Electric Ind Co Ltd | Manufacture of resin sealed type semiconductor device |
-
1987
- 1987-05-06 JP JP62111254A patent/JPH0687468B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63274152A (en) | 1988-11-11 |
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