JPH069515Y2 - Wafer storage boat - Google Patents

Wafer storage boat

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Publication number
JPH069515Y2
JPH069515Y2 JP15046284U JP15046284U JPH069515Y2 JP H069515 Y2 JPH069515 Y2 JP H069515Y2 JP 15046284 U JP15046284 U JP 15046284U JP 15046284 U JP15046284 U JP 15046284U JP H069515 Y2 JPH069515 Y2 JP H069515Y2
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JP
Japan
Prior art keywords
wafer
support
frame
frames
storage boat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP15046284U
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Japanese (ja)
Other versions
JPS6165745U (en
Inventor
昭 北村
Original Assignee
ロ−ム株式会社
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Priority to JP15046284U priority Critical patent/JPH069515Y2/en
Publication of JPS6165745U publication Critical patent/JPS6165745U/ja
Application granted granted Critical
Publication of JPH069515Y2 publication Critical patent/JPH069515Y2/en
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Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は、各種半導体素子に用いる薄板状のウエハを多
数枚その各広巾面が横向きになるようにして適宜間隔で
前後一列状に載せて運搬できるようにした容器(以下収
納ボートと云う)の構造に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention places a large number of thin plate-shaped wafers used for various semiconductor elements in a row in a front-rear direction at appropriate intervals such that their respective wide surfaces are lateral. The present invention relates to the structure of a container that can be transported (hereinafter referred to as a storage boat).

〔従来の技術〕[Conventional technology]

パワートランジスタ等の素子やMOSIC,LSI等の
集積回路等の各種半導体素子を製造するのにSi製等の
薄い円板状のウエハを用い、その片面に素子のベースと
なるべきチップを多数個、一度に作りつけられる、いわ
ゆるバッチ処理を行う。
A thin disk-shaped wafer made of Si or the like is used to manufacture various semiconductor elements such as elements such as power transistors and integrated circuits such as MOSIC and LSI, and a large number of chips to be the bases of the elements are formed on one side of the wafer. Performs so-called batch processing that can be built at once.

この場合、一枚のウエハからのチップの取得数が多いほ
ぼ経済性も向上する。例えばnpn,Siメサ形トラン
ジスタの製造工程において、n形Siウエハの片面に予
め形成されたSiO2の被膜のうちエミッタとなるべき
部分の被膜を除去するのにプラズマ剥離を施したり、エ
ミッタ及びベースの部分をワックスでカバーして後エッ
チングして不要部分を削り取るのにプラズマエッチング
を行う。
In this case, the number of chips obtained from a single wafer is large, and the economy is improved. For example, in a manufacturing process of an npn, Si mesa transistor, plasma delamination is performed to remove a film of a portion of an SiO 2 film previously formed on one surface of an n-type Si wafer to be an emitter, or an emitter and a base are removed. The part is covered with wax and then etched to perform plasma etching to remove unnecessary parts.

このようなプラズマ剥離やプラズマエッチングの工程に
おいて、多数枚のウエハを一度に処理するいわゆるバッ
チ処理のため、従来の技術では、第5図及び第6図及び
特開昭56−120124号公報に示すように、前後長
手の収納ボートの上面に、その前後方向に適宜間隔にて
断面上向き開放状の断面上向きコ字状やV字状の溝4を
切欠き形成し、この各溝4にウエハ10の下端縁を載置
して、適宜間隔で立てた状態で収納することが行われて
いる。
In such a process of plasma stripping or plasma etching, so-called batch processing is performed to process a large number of wafers at a time, and therefore, in the prior art, it is shown in FIGS. 5 and 6 and JP-A-56-120124. As described above, the U-shaped or V-shaped groove 4 having an open cross-section and an upward cross-section is cut out at appropriate intervals in the front-rear direction on the upper surface of the longitudinal storage boat, and the wafer 10 is formed in each groove 4. The lower edge of the is placed and stored in an upright state at appropriate intervals.

〔考案が解決しようとする課題〕[Problems to be solved by the device]

前記のように、断面形状が上向きコ字状(第5図)また
はV字状(第6図)等に形成された各溝4内に各ウエハ
10の端縁部5を挿入してウエハ10を略垂直に立てる
と、前記プラズマ剥離やプラズマエッチングにおいてウ
エハ10の表面10aに向かって放射される電子やイオ
ンのビーム6は直進性が強い一方、溝4の前側面4aと
ウエハ10の表面との間の隙間空間が狭いから、前記溝
4における前側面4aがビーム6を遮ることとなって、
溝4内に位置するウエハ10端縁部5の前面にはビーム
6が照射されずいわゆる影ができ、その箇所の酸化被膜
の剥離やエッチングが不完全もしくは不能となり、それ
らの箇所のチップ部は不良となり、一枚のウエハにおけ
る良品としてのチップの取り数が減少し、経済性を悪く
する問題があった。
As described above, the edge portion 5 of each wafer 10 is inserted into each groove 4 having a U-shaped cross section (FIG. 5) or V-shape (FIG. 6). Is set substantially vertically, the electron or ion beam 6 emitted toward the surface 10a of the wafer 10 in the plasma separation or plasma etching has a strong straight-line property, while the front side surface 4a of the groove 4 and the surface of the wafer 10 are Since the space between them is narrow, the front side surface 4a of the groove 4 blocks the beam 6.
The front surface of the edge portion 5 of the wafer 10 located in the groove 4 is not irradiated with the beam 6 and a so-called shadow is formed, so that peeling or etching of the oxide film at that portion is incomplete or impossible, and the chip portion at those portions is removed. There is a problem in that it becomes defective, the number of chips as non-defective products in one wafer decreases, and the economical efficiency deteriorates.

また、特開昭56−120124号公報でも説明してい
るように、収納ボートにおける溝4にウエハ10を装着
したり、反対に取り外すには、ウエハ10の厚さより溝
4の幅を若干大きくしなければならない。しかも、収納
ボートの上面に形成した溝にウエハ10の下端縁だけを
嵌挿して、該収納ボートを水平な基板(テーブル)に配
置すると、溝4幅がウエハ10の厚さより広い(大き
い)のだから、ウエハ10が前に傾いたり後に傾く等し
て各ウエハの立設状態が区々となり、各ウエハ10に対
するプラズマエッチング等のビーム6の照射等が区々と
なるので、前記先行技術の公報では、収納ボートを傾斜
面に載置するか、水平状の基板上に載置した収納ボート
に立設させたウエハの表面側からガスを噴射させて、各
ウエハを強制的に後傾斜させる技術が開示されている。
Further, as described in JP-A-56-120124, in order to mount the wafer 10 in the groove 4 in the storage boat or to remove it vice versa, the width of the groove 4 is made slightly larger than the thickness of the wafer 10. There must be. Moreover, when only the lower edge of the wafer 10 is inserted into the groove formed on the upper surface of the storage boat and the storage boat is placed on the horizontal substrate (table), the width of the groove 4 is wider (larger) than the thickness of the wafer 10. Therefore, the standing state of each wafer becomes different due to the wafer 10 tilting forward and backward, and the irradiation of the beam 6 such as plasma etching on the wafer 10 also becomes different. In order to forcibly incline each wafer by injecting gas from the front side of the wafer placed on the inclined surface of the storage boat or standing on the storage boat placed on the horizontal substrate. Is disclosed.

しかし、この先行技術の収納ボートにてウエハを載置し
て運搬しようとすると、ウエハの下端縁だけが溝に係合
していることから、ウエハの広幅面方向に揺れに対して
は、当該ウエハが収納ボートから脱落し易いので、ウエ
ハが運搬中に破損して歩留りが悪くなる。
However, when a wafer is loaded and carried by this storage boat of the prior art, only the lower edge of the wafer is engaged with the groove, so that the wafer is shaken in the direction of the wide surface thereof. Since the wafers are easily dropped from the storage boat, the wafers are damaged during transportation, resulting in poor yield.

さらに、前記ウエハの後傾斜状態を保持しながら運搬す
ることは至難のこととなり、作業効率も至極低下すると
いう問題があった。
Further, it is very difficult to carry the wafer while maintaining the rearward tilted state, and there is a problem that the working efficiency is extremely lowered.

本考案は前記諸問題点を解消しようとするものである。The present invention is intended to solve the above problems.

〔課題を解決するための手段〕[Means for Solving the Problems]

この目的を達成するため本考案では、薄い板状のウエハ
を、その広巾表面が前向きになるようにして前後方向に
適宜間隔にて一列状に配列させて運搬可能にする収納ボ
ートにおいて、前記各ウエハの下端縁部を支持溝にて支
持する下端支持枠の前後端と、前記ウエハの左右両側縁
部を支持溝にて支持する左右両側の支持枠の前後端と
を、水平な基板上に垂直状に載置する前枠体と後枠体に
て連結し、前記各支持溝の断面形状を、各ウエハの広巾
裏面側が凭れる急傾斜面と、広巾表面側が密着しないよ
うな緩傾斜面とからなる略V字状に形成する一方、前記
3つの支持枠を水平状に配設すると共に、左右両側支持
枠の各支持溝における急傾斜面の位置を、下端支持枠の
各支持溝における急傾斜面の位置よりウエハ裏面側に位
置するようにずらせ配置するか、又は左右両側支持枠お
よび下端支持枠を、前記前枠体側で高く、後枠体側で低
くなるように傾斜状に配設した構成としたものである。
In order to achieve this object, the present invention relates to a storage boat capable of transporting thin plate-shaped wafers arranged in a row at appropriate intervals in the front-rear direction such that the wide surface of the wafer faces forward. The front and rear ends of the lower end support frame that supports the lower end edge of the wafer in the support groove and the front and rear ends of the left and right support frames that support the left and right side edges of the wafer in the support groove are placed on a horizontal substrate. A front frame and a rear frame that are vertically mounted are connected to each other, and the cross-sectional shape of each of the support grooves has a steep slope where the wide back side of each wafer is supported and a gentle slope where the wide front side does not adhere to each other. And the three support frames are horizontally arranged, and the positions of the steeply inclined surfaces in the support grooves of the left and right support frames are set in the support grooves of the lower end support frame. Slide it so that it is located on the backside of the wafer with respect to the position of the steep slope. Or location, or the left and right side support frame and a lower supporting frame, the higher in the front frame side, is obtained by a structure which is arranged in inclined to be lower at the rear frame side.

〔考案の作用・効果〕[Function and effect of device]

本考案の収納ボートは、水平な基板上に垂直状に載置す
る前枠体と後枠体とに、ウエハの広幅面が前枠体方向に
向くように横向きにして一列状に配列した薄い板状のウ
エハの下端縁部を支持する下端支持枠の前後端と、前記
各ウエハの左右両側縁部を支持する左右両側の支持枠の
前後端とを連結して成るので、各ウエハをいわゆる3点
支持することができる。
The storage boat of the present invention has a front frame and a rear frame that are vertically mounted on a horizontal substrate, and is arranged in a row so that the wide surface of the wafer faces the front frame and is arranged in a row. Since the front and rear ends of the lower end support frame that supports the lower end edge of the plate-shaped wafer and the front and rear ends of the left and right support frames that support the left and right side edges of each wafer are connected, Can support three points.

従って、この収納ボートに載置したウエハを安全且つ確
実に運搬することができ、従来の技術のようにウエハの
下端縁だけを支持するものに比べ、収納ボートの運搬中
にウエハが脱落する事故を極端に減少させることができ
る。
Therefore, the wafer placed on the storage boat can be safely and reliably transported, and the wafer can fall off during transportation of the storage boat as compared with the conventional technique that supports only the lower edge of the wafer. Can be extremely reduced.

そして、左右両側支持枠及び下端支持枠に各々形成され
る支持溝の断面形状を、ウエハの広幅裏面側と対面する
後方が急な傾斜面となり、ウエハの広幅表面側と対面す
る前方が緩い傾斜面となるような偏よったV字状にすれ
ば、各支持溝における角度が緩い緩傾斜面側では、支持
される箇所のウエハの端縁部のみが接当するだけでウエ
ハの広巾表面側が密着せず、ウエハ表面に向かって照射
されるビームが前記支持溝内に位置するウエハの広巾表
面側にも照射することができて、ウエハの周縁部分をも
剥離やエッチング処理することができる。
The cross-sectional shape of the support groove formed on each of the left and right support frames and the lower end support frame has a steep slope in the rear facing the wide back surface of the wafer and a gentle slope in the front facing the wide front surface of the wafer. If the V-shape is biased so that the surface becomes a surface, on the gently inclined surface side where the angle in each support groove is gentle, only the edge portion of the wafer at the supported portion abuts and the wide surface side of the wafer becomes The beam irradiated toward the wafer surface without being in close contact can also be irradiated on the wide surface side of the wafer located in the support groove, and the peripheral portion of the wafer can be peeled off or etched.

他方、各支持溝における急傾斜面にてウエハの裏面側を
支えるので、各一列状に配列したウエハが後向きにずれ
移動することがない。
On the other hand, since the back surface side of the wafer is supported by the steeply inclined surface of each support groove, the wafers arranged in a row do not move backward.

しかも、前記3つの支持枠を水平状に配設すると共に、
各ウエハの左右両側縁部を支持する左右両側支持枠の支
持溝における急傾斜面の位置を、当該ウエハの下端縁部
を支持する下端支持枠の支持溝における急傾斜面の位置
よりウエハ裏面側に位置するようにずらせ配置するか、
又は左右両側支持枠および下端支持枠を、その長手軸線
がウエハの配列の前側で高く、後側に行くに従って低い
位置になるように設けたものであるので、このいずれの
状態においても、各支持溝箇所においてウエハの下端に
対して上側を広幅面の裏面側にずれたように凭れ掛けさ
せることができて、薄い板状のウエハが前に倒れるおそ
れも無くなる。
Moreover, the three support frames are arranged horizontally,
The position of the steeply sloping surface in the support groove of the left and right side support frames supporting the left and right side edges of each wafer is closer to the wafer back side than the position of the steeply sloping surface in the support groove of the lower end support frame supporting the lower edge of the wafer. Or shift it so that it is located at
Alternatively, since the left and right support frames and the lower end support frame are provided such that their longitudinal axes are higher on the front side of the wafer array and lower on the rear side, each support is provided in any of these states. At the groove portion, the upper side can be leaned against the lower end of the wafer so as to be shifted to the back side of the wide surface, and there is no fear that the thin plate-shaped wafer will fall forward.

このように本考案によれば、収納ボート内い載置した各
ウエハの広巾表面の周縁部までビームを均一に照射する
ことができて、一枚のウエハから取れる良品のチップ数
を多くでき製造コストを大幅に低減できて経済性も向上
する効果を有する。
As described above, according to the present invention, it is possible to uniformly irradiate the beam to the peripheral portion of the wide surface of each wafer placed in the storage boat, and increase the number of non-defective chips that can be obtained from one wafer. This has the effect of significantly reducing costs and improving economic efficiency.

また、収納ボートは前後枠体間を下端支持枠と左右両側
支持枠とにより連結したもので、広幅面を横向きにして
たてかけたウエハの下端縁ばかりでなく左右両側縁をも
支持する,いわゆる3点支持であるとともに、前記のご
とく各ウエハを裏面側に凭れ掛けさせられることができ
ることとが相俟って、薄いウエハであってもこれらがボ
ート内で後へずれたり、前のめりに倒れることを防止で
きて、多数枚のウエハの運搬も安全且つ確実に行うこと
ができ、さらに、ウエハのバッチ処理を安定して行える
という効果を有するのである。
Further, the storage boat connects the front and rear frames with the lower end support frame and the left and right side support frames, and supports not only the lower end edge of the wafer laid vertically with the wide surface but also the left and right side edges, In addition to the so-called three-point support, each wafer can be leaned to the back side as described above, and even if it is a thin wafer, these may slip backward in the boat or fall forward. This has the effect that it is possible to prevent this, and to carry a large number of wafers safely and reliably, and also to perform stable batch processing of wafers.

〔実施例〕〔Example〕

次に本考案の実施例について説明すると、図において、
符号10はSi製等の薄い円板状のウエハを、符号11
はこれら多数のウエハ10をその広巾面が横向きとなる
ようにして前後一列状に配置して収納できるようにした
収納ボートを各々示す。
Next, an embodiment of the present invention will be described.
Reference numeral 10 denotes a thin disk-shaped wafer made of Si or the like, and reference numeral 11
Shows a storage boat in which a large number of these wafers 10 are arranged side by side in a row so that their wide surfaces are lateral.

該収納ボート11は、外面に各々把手部12,12を備
えた前枠13と後枠13′と、該前後枠13,13′間
を継ぐ左右一対の側支持枠14,14′及びその両側支
持枠14,14′間の下部に位置する下端支持枠15と
からなり、該左右両側支持枠14,14′の相対面する
内側面と下端支持枠15の上面とでウエハ10の下半分
を囲み、ウエハ10の端縁の3箇所を支持するように配
設されている。
The storage boat 11 has a front frame 13 and a rear frame 13 'each provided with grips 12, 12 on the outer surface, a pair of left and right side support frames 14, 14' connecting the front and rear frames 13, 13 ', and both sides thereof. The lower half of the wafer 10 is composed of a lower end support frame 15 located in the lower part between the support frames 14 and 14 ', and the lower half of the wafer 10 is formed by the inner surfaces of the left and right side support frames 14 and 14' facing each other and the upper surface of the lower end support frame 15. It is provided so as to surround the wafer and to support the three edges of the wafer 10.

断面円形状で前後方向に長手に形成された前記3つの支
持枠14,14′,15は、前枠13側で高い位置に、
後枠13′側で低い位置となるように傾斜され、且つ互
いに平行状に配設される。
The three support frames 14, 14 ′, 15 having a circular cross section and formed longitudinally in the front-rear direction are located at high positions on the front frame 13 side.
The rear frame 13 'is inclined so as to be at a low position on the side of the rear frame 13', and arranged in parallel with each other.

前記左右両側支持枠14,14′の相対面する内側面と
下端支持枠15の上面とには、各々各支持枠の長手軸線
と直角方向に長手の支持溝16,17,18を各支持枠
の長手軸線に沿って一定間隔(P)ごとに多数刻設す
る。これら各支持溝16,17,18の断面形状は、第
3図及び第4図に示すように、各支持枠の下向き傾斜寄
り位置で各支持枠表面19,19,20に対して略直角
等の急な急傾斜面21,21,22を有し、且つその反
対側では前記表面19,19,20に対して適宜鋭角度
(θ1),(θ2)の緩い緩傾斜面23,23,24を
有するような偏りV字状に形成するものである。
On the inner side surfaces of the left and right side support frames 14 and 14 'facing each other and on the upper surface of the lower end support frame 15, support grooves 16, 17 and 18 respectively long in the direction perpendicular to the longitudinal axis of each support frame are provided. A large number are provided at regular intervals (P) along the longitudinal axis of. As shown in FIG. 3 and FIG. 4, the cross-sectional shape of each of the support grooves 16, 17, and 18 is substantially right angle to the support frame surfaces 19, 19, and 20 at the downward tilted position of each support frame. Has steep steep slopes 21, 21, 22 and, on the opposite side thereof, gentle gentle slopes 23, 23, 24 having an acute angle (θ1), (θ2) with respect to the surfaces 19, 19, 20 as appropriate. Is formed in a biased V-shape.

この構成によれば、第1図に示すように、多数枚のウエ
ハ10を、その各ウエハ10の下半分の端縁部の3箇所
10a,10b,10cを前記各支持溝16,17,1
8箇所で係止した状態で一定間隔(P)にて前後一列状
に配設して収納ボート11内に収納できる。
According to this structure, as shown in FIG. 1, a large number of wafers 10 are attached to the support grooves 16, 17, 1 at the three positions 10a, 10b, 10c of the lower edge of each wafer 10.
It can be stored in the storage boat 11 by being arranged in a row in front and rear at fixed intervals (P) while being locked at eight locations.

このとき、左右両側支持枠14,14′の支持溝16,
17位置が下端支持枠15の支持溝18位置の鉛直上方
位置よりも若干ウエハ10の裏面側(収納ボートの後枠
13′寄り側)に形成されているので(第3図参照)、
各ウエハ10はその上端側が下端側よりも後寄り側にな
るいわゆる後傾状に配置され、各ウエハ10は、その裏
面側の各端縁部10a,10b,10cが各支持溝1
6,17,18における急傾斜面21,21,22に凭
れ掛けさせることができるので、後傾状態のまま立つこ
とができ、各ウエハ10が前のめりに倒れるおそれが無
くなるのである。
At this time, the support grooves 16 of the left and right support frames 14, 14 ',
Since the 17 position is formed slightly on the back surface side of the wafer 10 (closer to the rear frame 13 'of the storage boat) than the vertically upper position of the support groove 18 position of the lower end support frame 15 (see FIG. 3).
The respective wafers 10 are arranged in a so-called rearward tilted manner in which the upper end side is closer to the rear side than the lower end side, and each wafer 10 has its back edge side edge portions 10a, 10b, and 10c each supporting groove 1.
Since the steeply inclined surfaces 21, 21, 22 in 6, 17, 18 can be leaned against each other, the wafers 10 can stand in a state of being tilted backward, and there is no possibility that the respective wafers 10 fall forward.

この収納ボート11をその内部のウエハ10表面側がプ
ラズマ剥離装置やプラズマエッチング装置におけるイオ
ン等のビーム25の照射側に向かうように配置すれば、
前記各支持溝16,17,18における緩傾斜面23,
23,24とウエハ10の表面側との間には、大きな三
角形状の空間ができ、ビーム25は各緩傾斜面23,2
3,24に邪魔されずに各支持溝16,17,18にお
けるウエハ10の表面側端縁部に到達できてその部分の
剥離やエッチング処理が完全にできるのである。
If the storage boat 11 is arranged so that the surface side of the wafer 10 inside the storage boat 11 faces the irradiation side of the beam 25 of ions or the like in the plasma stripping apparatus or the plasma etching apparatus,
Gently sloping surface 23 in each of the supporting grooves 16, 17, 18
A large triangular space is formed between the surfaces 23 and 24 and the surface side of the wafer 10, and the beam 25 is formed on each of the gently inclined surfaces 23 and 2.
It is possible to reach the front surface side edge of the wafer 10 in each of the supporting grooves 16, 17, and 18 without being disturbed by 3, 24, and the peeling or etching process of that portion can be completed.

そして、前記左右両側支持枠14,14′及び下端支持
枠15をその長手軸線が前枠13箇所にて高い位置とな
り後枠13′箇所で低い位置となるように前後方向に高
さを変えることにより、これらに載置されるウエハ10
が後方に傾斜して各支持溝16,17,18の急傾斜面
21,21,22に凭れ掛けさせることができるように
していたが、この後方傾斜を実現するための他の実施例
としては、前記左右両側支持枠14,14′及び下端支
持枠15を略水平状に配設し、左右両側支持枠14,1
4′における支持溝16,17の急傾斜面21,21の
位置が下端支持枠15における支持溝18の急傾斜面2
2に対して鉛直上方位置から適宜寸法だけ後方に偏るよ
うにすることによっても達成できる。
Then, the heights of the left and right support frames 14, 14 'and the lower end support frame 15 are changed in the front-rear direction so that the longitudinal axes thereof are at a high position at the front frame 13 and at a low position at the rear frame 13'. The wafer 10 placed on these
Is inclined rearward so that it can lean against the steeply inclined surfaces 21, 21, 22 of the support grooves 16, 17, 18, but as another embodiment for realizing this rearward inclination, The left and right side support frames 14, 14 'and the lower end support frame 15 are arranged substantially horizontally, and the left and right side support frames 14, 1
The positions of the steeply sloping surfaces 21 and 21 of the support grooves 16 and 17 in 4 ′ are the steeply sloping surfaces 2 of the support grooves 18 in the lower end support frame 15.
It can also be achieved by biasing the vertical direction from the vertically upper position with respect to 2 by an appropriate amount.

また、各支持枠14,14′,15の断面形状は四角
形、六角形等の任意のものが使用できる。
Further, the cross-sectional shape of each of the support frames 14, 14 ', 15 can be any shape such as a quadrangle or a hexagon.

【図面の簡単な説明】[Brief description of drawings]

第1図から第4図までは本考案の実施例を示し、第1図
は収納ボートの側面図、第2図は正面図、第3図は第2
図のIII−III線視拡大断面図、第4図は第2図のIV−IV
線視拡大断面図、第5図及び第6図は従来例を示し、第
5図は支持溝の要部拡大断面図、第6図は他の支持溝の
要部拡大断面図である。 10……ウエハ、11……収納ボート、13……前枠、
13′……後枠、14,14′……左右両側支持枠、1
5……下端支持枠、16,17,18……支持溝、2
1,21,22……急傾斜面、23,23,24……緩
傾斜面。
1 to 4 show an embodiment of the present invention, FIG. 1 is a side view of a storage boat, FIG. 2 is a front view, and FIG. 3 is a second view.
FIG. 4 is an enlarged sectional view taken along line III-III in FIG. 4, and FIG. 4 is IV-IV in FIG.
FIG. 5 is an enlarged cross-sectional view of a main portion of a support groove, and FIG. 6 is an enlarged cross-sectional view of a main portion of another support groove. 10 ... Wafer, 11 ... Storage boat, 13 ... Front frame,
13 '... rear frame, 14, 14' ... left and right support frames, 1
5 ... Bottom support frame, 16, 17, 18 ... Support groove, 2
1,2,22 ... steep slopes, 23, 23, 24 ... gently slopes.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】薄い板状のウエハを、その広巾表面が前向
きになるようにして前後方向に適宜間隔にて一列状に配
列させて運搬可能にする収納ボートにおいて、前記各ウ
エハの下端縁部を支持溝にて支持する下端支持枠の前後
端と、前記ウエハの左右両側縁部を支持溝にて支持する
左右両側の支持枠の前後端とを、水平な基板上に垂直状
に載置する前枠体と後枠体にて連結し、前記各支持溝の
断面形状を、各ウエハの広巾裏面側が凭れる急傾斜面
と、広巾表面側が密着しないような緩傾斜面とからなる
略X字状に形成する一方、前記3つの支持枠を水平状に
配設すると共に、左右両側支持枠の各支持溝における急
傾斜面の位置を、下端支持枠の各支持溝における急傾斜
面の位置よりウエハ裏面側に位置するようにずらせ配置
するか、又は左右両側支持枠および下端支持枠を、前記
前枠体側で高く、後枠体側で低くなるように傾斜状に配
設したことを特徴とするウエハの収納ボート。
1. A storage boat capable of transporting thin plate-shaped wafers arranged in a row at an appropriate interval in the front-rear direction so that a wide surface of the wafer faces forward, and a lower edge portion of each wafer. The front and rear ends of the lower end support frame for supporting the wafer in the support groove and the front and rear ends of the left and right support frames for supporting the left and right side edges of the wafer in the support groove are vertically mounted on a horizontal substrate. The front and rear frames are connected to each other, and the cross-sectional shape of each of the supporting grooves is substantially X, which is composed of a steeply inclined surface on which the wide back surface side of each wafer stands and a gently inclined surface on which the wide front surface side does not adhere. On the other hand, the three support frames are arranged horizontally, and the positions of the steep slopes in the respective support grooves of the left and right support frames are set to the positions of the steep slopes in the respective support grooves of the lower end support frame. It is arranged so that it is located on the back side of the wafer, or it is placed on both the left and right sides. A support frame and a lower supporting frame, the higher in the front frame side, the wafer storage boat, characterized in that disposed in inclined to be lower at the rear frame side.
JP15046284U 1984-10-03 1984-10-03 Wafer storage boat Expired - Lifetime JPH069515Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15046284U JPH069515Y2 (en) 1984-10-03 1984-10-03 Wafer storage boat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15046284U JPH069515Y2 (en) 1984-10-03 1984-10-03 Wafer storage boat

Publications (2)

Publication Number Publication Date
JPS6165745U JPS6165745U (en) 1986-05-06
JPH069515Y2 true JPH069515Y2 (en) 1994-03-09

Family

ID=30708609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15046284U Expired - Lifetime JPH069515Y2 (en) 1984-10-03 1984-10-03 Wafer storage boat

Country Status (1)

Country Link
JP (1) JPH069515Y2 (en)

Also Published As

Publication number Publication date
JPS6165745U (en) 1986-05-06

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