JPH0710407Y2 - Reference voltage generation circuit - Google Patents

Reference voltage generation circuit

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Publication number
JPH0710407Y2
JPH0710407Y2 JP1984163581U JP16358184U JPH0710407Y2 JP H0710407 Y2 JPH0710407 Y2 JP H0710407Y2 JP 1984163581 U JP1984163581 U JP 1984163581U JP 16358184 U JP16358184 U JP 16358184U JP H0710407 Y2 JPH0710407 Y2 JP H0710407Y2
Authority
JP
Japan
Prior art keywords
reference voltage
drain
constant current
transistors
current source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1984163581U
Other languages
Japanese (ja)
Other versions
JPS6178315U (en
Inventor
英雄 大前
Original Assignee
ロ−ム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ロ−ム株式会社 filed Critical ロ−ム株式会社
Priority to JP1984163581U priority Critical patent/JPH0710407Y2/en
Publication of JPS6178315U publication Critical patent/JPS6178315U/ja
Application granted granted Critical
Publication of JPH0710407Y2 publication Critical patent/JPH0710407Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【考案の詳細な説明】 〈産業上の利用分野〉 本考案は、任意に温度係数を設定することのできる基準
電圧発生回路に関する。
DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a reference voltage generating circuit capable of arbitrarily setting a temperature coefficient.

〈従来技術とその問題点〉 従来の基準電圧発生回路では、温度補償が充分に考慮さ
れていないために、外部温度が変化すると、これに伴い
基準電圧が変動し、このため、該基準電圧発生回路に接
続された各種機器が誤動作を起こす場合があった。ま
た、各種機器の温度特性に合わせて基準電圧発生回路の
温度係数が設定できれば、適正な温度補償を行うことが
できるので、任意に温度係数の設定ができる基準電圧発
生回路が望まれていた。
<Prior Art and its Problems> In the conventional reference voltage generation circuit, since temperature compensation is not sufficiently taken into consideration, when the external temperature changes, the reference voltage changes accordingly. Various devices connected to the circuit sometimes malfunctioned. Further, if the temperature coefficient of the reference voltage generating circuit can be set in accordance with the temperature characteristics of various devices, appropriate temperature compensation can be performed, so there has been a demand for a reference voltage generating circuit capable of arbitrarily setting the temperature coefficient.

本考案は、上述の事情に鑑みてなされたものであって、
任意に温度係数を設定できるようにするともに、必要に
応じて温度補償が自動的に行われる基準電圧発生回路を
提供することを目的とする。
The present invention has been made in view of the above circumstances,
It is an object of the present invention to provide a reference voltage generating circuit which allows the temperature coefficient to be arbitrarily set and temperature compensation to be automatically performed as necessary.

〈問題点を解決するための手段〉 本考案は上述の目的を達成するため、第1及び第2のMO
Sトランジスタ4,6を備えた基準電圧発生回路であって、
第1及び第2のMOSトランジスタ4,6は、温度特性が互い
にほぼ等しく、それぞれにおいてドレイン4d,6d、ゲー
ト4g,6g間が接続され、それぞれのソース4sとドレイン6
dとを介して直列接続され、かつ、ドレイン4dが定電流
源8にドレイン6dが定電流源10に、もしくは、ドレイン
4dのみが定電流源8に接続されてトランジスタ4,6に異
なる電流密度の電流が与えられ、第1のMOSトランジス
タ4のドレイン4d位置に出力部12が設けられ、温度変動
に伴うトランジスタ4,6それぞれのゲート電圧の変動分
を互いに相殺した基準電圧を発生する基準電圧発生回路
を提供する。
<Means for Solving Problems> In order to achieve the above-mentioned object, the present invention provides a first MO and a second MO.
A reference voltage generating circuit including S transistors 4 and 6,
The temperature characteristics of the first and second MOS transistors 4 and 6 are substantially equal to each other, and the drains 4d and 6d and the gates 4g and 6g are connected to each other.
and the drain 4d is connected to the constant current source 8 and the drain 6d is connected to the constant current source 10 or the drain is connected in series via
Only 4d is connected to the constant current source 8 so that currents having different current densities are given to the transistors 4 and 6, the output section 12 is provided at the drain 4d position of the first MOS transistor 4, and the transistor 4 due to the temperature change, (6) Provided is a reference voltage generation circuit that generates a reference voltage by canceling out fluctuations in each gate voltage.

〈実施例〉 以下、本考案を図面に示す実施例に基づき詳細に説明す
る。
<Example> Hereinafter, the present invention will be described in detail based on an example shown in the drawings.

第1図はこの実施例に係る基準電圧発生回路の構成図で
ある。同図において、符号1は基準電圧発生回路を示
し、2は温度係数補正回路である。
FIG. 1 is a block diagram of a reference voltage generating circuit according to this embodiment. In the figure, reference numeral 1 is a reference voltage generating circuit, and 2 is a temperature coefficient correcting circuit.

この温度係数補正回路2は、ドレイン4d,6d、ゲート4g,
6g間が接続された互いにほぼ温度特性を同じくする第
1、第2MOSトランジスタ4、6が互いにソース4sとドレ
イン6dとを介して直列に接続されて構成されている。ま
た、この温度係数補正回路2の第1、第2MOSトランジス
タ4、6のドレイン4d,6dに定電流源8、10がそれぞれ
接続されている。そして、一方の第1MOSトランジスタ4
と定電流源8との接続点12が基準電圧の出力端子とされ
ている。
This temperature coefficient correction circuit 2 includes a drain 4d, 6d, a gate 4g,
The first and second MOS transistors 4 and 6 having the same temperature characteristics are connected to each other in series between 6g and are connected in series via a source 4s and a drain 6d. Further, constant current sources 8 and 10 are connected to the drains 4d and 6d of the first and second MOS transistors 4 and 6 of the temperature coefficient correction circuit 2, respectively. Then, one of the first MOS transistors 4
A connection point 12 between the constant current source 8 and the constant current source 8 serves as a reference voltage output terminal.

第3図は第1、第2MOSトランジスタ4、6のゲート電圧
とドレイン電流との関係を示す特性図である。同図中、
横軸がゲート電圧Vg、縦軸がドレイン電流の平方根1dで
ある。いま、外部温度が例えば、低温から高温になって
変動すると、これに伴い第1、第2MOSトランジスタ4、
6の特性も第3図の実線T1から破線T2のごとく変化す
る。ところが、定電流源8、10から第1、第2MOSトラン
ジスタ4、6にそれぞれ与える電流値I1、I2を第3図の
A点、B点に対応するように予め設定しておけば、第1M
OSトランジスタ4の電圧変動分ΔV1が第2MOSトランジス
タ6の電圧変動分ΔV2で補償されるため、接続点12で得
られる電圧値はVsとなって、温度に依存せず一定とな
る。また、第1、第2MOSトランジスタ4、6に供給する
電流値I1、I2を適宜設定すれば、任意の温度係数を持た
せることが可能である。
FIG. 3 is a characteristic diagram showing the relationship between the gate voltage and the drain current of the first and second MOS transistors 4 and 6. In the figure,
The horizontal axis represents the gate voltage Vg, and the vertical axis represents the square root 1d of the drain current. Now, when the external temperature fluctuates from low temperature to high temperature, for example, the first and second MOS transistors 4,
The characteristic of 6 also changes from the solid line T 1 to the broken line T 2 in FIG. However, if the current values I 1 and I 2 given from the constant current sources 8 and 10 to the first and second MOS transistors 4 and 6 are set in advance so as to correspond to points A and B in FIG. 3, 1M
Since the voltage variation ΔV 1 of the OS transistor 4 is compensated by the voltage variation ΔV 2 of the second MOS transistor 6, the voltage value obtained at the connection point 12 becomes Vs, which is constant regardless of the temperature. Further, by appropriately setting the current values I 1 and I 2 supplied to the first and second MOS transistors 4 and 6, it is possible to give an arbitrary temperature coefficient.

第2図は他の実施例に係る基準電圧発生回路の構成図で
ある。この実施例で特徴的な点は、温度係数補正回路22
を構成する第1、第2MOSトランジスタ24、26に対して1
つの定電流源28が設けられていること、および第1、第
2MOSトランジスタ24、26の互いの素子形状、例えばチャ
ネル長さやチャネル幅が異なるように設定されているこ
とである。
FIG. 2 is a block diagram of a reference voltage generating circuit according to another embodiment. The characteristic point of this embodiment is that the temperature coefficient correction circuit 22
1 for the first and second MOS transistors 24, 26 that make up
Two constant current sources 28 are provided, and the first and second
That is, the element shapes of the 2MOS transistors 24 and 26, for example, the channel length and the channel width are set to be different from each other.

従って、この実施例の基準電圧発生回路20では、第1、
第2MOSトランジスタ24、26の素子形状が互いに異なる結
果、第1、第2MOSトランジスタ24、26のドレイン、ソー
ス間を流れる電流の電流密度が変化し、これによって第
1図の実施例の場合と同様な温度特性の効果を持たせる
ことができる。
Therefore, in the reference voltage generating circuit 20 of this embodiment, the first,
As a result of the element shapes of the second MOS transistors 24 and 26 being different from each other, the current density of the current flowing between the drain and the source of the first and second MOS transistors 24 and 26 is changed, which is the same as in the embodiment of FIG. The effect of excellent temperature characteristics can be provided.

〈効果〉 以上のように本考案によれば、MOSトランジスタに供給
される定電流源の電流値、あるいはMOSトランジスタの
素子形状を適宜設定することにより任意の温度係数を与
えることができる。しかも定電流源の電流値あるいはMO
Sトランジスタの形状の設定により、MOSトランジスタの
互いの温度依存性を相殺して温度補償ができるようにな
るという優れた効果を奏する。
<Effect> As described above, according to the present invention, an arbitrary temperature coefficient can be given by appropriately setting the current value of the constant current source supplied to the MOS transistor or the element shape of the MOS transistor. Moreover, the current value of the constant current source or MO
By setting the shape of the S transistor, it is possible to cancel the temperature dependences of the MOS transistors and to perform temperature compensation.

【図面の簡単な説明】[Brief description of drawings]

図面は本考案の実施例を示し、第1図および第2図は基
準電圧発生回路の構成図、第3図はMOSトランジスタの
温度依存性を示す特性図である。 1、20…基準電圧発生回路、2、22…温度係数補正回
路、4、6、24、26…MOSトランジスタ、8、10、28…
定電流源。
The drawings show an embodiment of the present invention. FIGS. 1 and 2 are configuration diagrams of a reference voltage generating circuit, and FIG. 3 is a characteristic diagram showing temperature dependence of a MOS transistor. 1, 20 ... Reference voltage generation circuit, 2, 22 ... Temperature coefficient correction circuit, 4, 6, 24, 26 ... MOS transistor, 8, 10, 28 ...
Constant current source.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】第1及び第2のMOSトランジスタ(4,6)を
備えた基準電圧発生回路であって、 第1及び第2のMOSトランジスタ(4,6)は、温度特性が
互いにほぼ等しく、それぞれにおいてドレイン(4d,6
d)、ゲート(4g,6g)間が接続され、それぞれのソース
(4s)とドレイン(6d)とを介して直列接続され、か
つ、ドレイン(4d)が定電流源(8)にドレイン(6d)
が定電流源(10)に、もしくは、ドレイン(4d)のみが
定電流源(8)に接続されてトランジスタ(4,6)に異
なる電流密度の電流が与えられ、 第1のMOSトランジスタ(4)のドレイン(4d)位置に
出力部(12)が設けられ、 温度変動に伴うトランジスタ(4,6)それぞれのゲート
電圧の変動分を互いに相殺した基準電圧を発生するもの
である基準電圧発生回路。
1. A reference voltage generating circuit comprising first and second MOS transistors (4, 6), wherein the first and second MOS transistors (4, 6) have substantially equal temperature characteristics. , Each drain (4d, 6
d) and the gates (4g, 6g) are connected, and they are connected in series via the respective sources (4s) and drains (6d), and the drains (4d) are connected to the constant current source (8) by the drains (6d). )
Is connected to the constant current source (10) or only the drain (4d) is connected to the constant current source (8), and currents having different current densities are given to the transistors (4, 6), and the first MOS transistor (4 A reference voltage generating circuit is provided with an output section (12) at a drain (4d) position of (4), and generates a reference voltage by canceling out variations in the gate voltages of the transistors (4, 6) due to temperature variations. .
JP1984163581U 1984-10-29 1984-10-29 Reference voltage generation circuit Expired - Lifetime JPH0710407Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1984163581U JPH0710407Y2 (en) 1984-10-29 1984-10-29 Reference voltage generation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1984163581U JPH0710407Y2 (en) 1984-10-29 1984-10-29 Reference voltage generation circuit

Publications (2)

Publication Number Publication Date
JPS6178315U JPS6178315U (en) 1986-05-26
JPH0710407Y2 true JPH0710407Y2 (en) 1995-03-08

Family

ID=30721444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1984163581U Expired - Lifetime JPH0710407Y2 (en) 1984-10-29 1984-10-29 Reference voltage generation circuit

Country Status (1)

Country Link
JP (1) JPH0710407Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9511314B2 (en) 2007-10-17 2016-12-06 Caterpillar Inc. Canister filter system with drain that cooperates with filter element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003015754A (en) * 2001-07-03 2003-01-17 Denso Corp Reference voltage generation circuit
JP6097582B2 (en) * 2013-02-01 2017-03-15 ローム株式会社 Constant voltage source

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546637A (en) * 1978-09-28 1980-04-01 Seiko Epson Corp Reference voltage circuit
JPS56111918A (en) * 1980-02-08 1981-09-04 Nec Corp Reference voltage source device
JPS58154626A (en) * 1982-03-10 1983-09-14 Sanyo Electric Co Ltd Photodetector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9511314B2 (en) 2007-10-17 2016-12-06 Caterpillar Inc. Canister filter system with drain that cooperates with filter element

Also Published As

Publication number Publication date
JPS6178315U (en) 1986-05-26

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