JPH07106959B2 - Single crystal pulling device - Google Patents
Single crystal pulling deviceInfo
- Publication number
- JPH07106959B2 JPH07106959B2 JP23945087A JP23945087A JPH07106959B2 JP H07106959 B2 JPH07106959 B2 JP H07106959B2 JP 23945087 A JP23945087 A JP 23945087A JP 23945087 A JP23945087 A JP 23945087A JP H07106959 B2 JPH07106959 B2 JP H07106959B2
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- single crystal
- heater
- side wall
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、単結晶引上げ方法（チョクラルスキー法）に
より、化合物半導体単結晶を引上げる装置に関する。The present invention relates to an apparatus for pulling a compound semiconductor single crystal by a single crystal pulling method (Czochralski method).
〔従来の技術〕 GaAs等のIII−Ｖ族化合物半導体はSiより大きな電子移
動度を有し、その性質を利用したICや発光素子の開発が
進められている。III−Ｖ族化合物半導体の単結晶を成
長させる方法としては、単結晶引上げ方法の一種である
液体封止引上げ法（Liquid Encapsulated Czochralski
（LEC）法）が工業的に多く用いられている。この方法
では加熱されるるつぼに原料と封止剤としてB2O3を導入
し、圧力容器内を高圧の不活性ガス雰囲気にした後、原
料を加熱溶融して原料融液とし、その表面をB2O3融液で
おおい、原料融液表面に種結晶を浸透し、なじませた
後、種結晶を回転させつつ引上げて単結晶をつくる。そ
の際、結晶を均一に安定成長させるためには、引上げ装
置内の温度を制御し、輻射、対流および伝導の熱的環境
を常に一定にすることが必要である。[Prior Art] III-V group compound semiconductors such as GaAs have electron mobility higher than Si, and development of ICs and light-emitting devices utilizing these properties is underway. As a method for growing a single crystal of a III-V group compound semiconductor, a liquid encapsulation pulling method (Liquid Encapsulated Czochralski), which is a kind of pulling method for a single crystal, is used.
(LEC) method is widely used industrially. Introducing B 2 O 3 as a raw material and the sealing agent in a crucible that is heated in this way, after the pressure vessel an inert gas atmosphere of high pressure, the raw material heated and melted to a raw material melt, the surface After covering with the B 2 O 3 melt and infiltrating the seed crystal onto the surface of the raw material melt to make it familiar, the seed crystal is pulled up while rotating to form a single crystal. At that time, in order to uniformly and stably grow the crystal, it is necessary to control the temperature in the pulling apparatus and always keep the thermal environment of radiation, convection and conduction constant.
一方、単結晶引上げ過程においては、第２図（ａ）、
（ｂ）に示すように引上げ軸（３）の下端に設けた種結
晶を原料融液（７）に浸漬して結晶成長とともに融液
（７）が減少し、液面の高さがるつぼ（５）壁に対して
下がっていく。そこで、成長界面（固液界面）のヒータ
ー（１）に対する位置を一定に保つために、るつぼ
（５）を支持する下軸（４）を上昇させてるつぼ（５）
を下から上へ徐々に押し上げている。On the other hand, in the single crystal pulling process, as shown in FIG.
As shown in (b), the seed crystal provided at the lower end of the pulling shaft (3) is immersed in the raw material melt (7) to reduce the melt (7) as the crystal grows, and the crucible ( 5) Go down against the wall. Therefore, in order to keep the position of the growth interface (solid-liquid interface) with respect to the heater (1) constant, the lower shaft (4) supporting the crucible (5) is raised.
Is gradually pushed from bottom to top.
しかしながら、第２図（ａ）、（ｂ）に示す従来の装置
で、るつぼ（５）を押し上げると、るつぼ（５）壁上端
の位置が変化するため、結晶上部の熱的環境が大きく変
化するという問題が生じる。るつぼ（５）壁がヒーター
（１）上部端より上にのびることにより（第２図（ｂ）
参照）、るつぼ（５）壁が障壁となりホットゾーンから
るつぼ（５）内への輻射が変化するのである。特に、ヒ
ーター（１）が上部にサブヒーター（２）を設けてある
場合には、熱的環境の変化は著しい。本発明は以上のよ
うな点に鑑みてなされたもので、その目的とするところ
は、単結晶引上げによるるつぼ位置の移動にかかわら
ず、装置内の熱的環境が常に一定である単結晶引上げ装
置を提供することである。However, when the crucible (5) is pushed up in the conventional device shown in FIGS. 2 (a) and 2 (b), the position of the upper end of the wall of the crucible (5) changes, so that the thermal environment of the upper part of the crystal changes significantly. The problem arises. The crucible (5) wall extends above the upper end of the heater (1) (Fig. 2 (b)).
See), the wall of the crucible (5) serves as a barrier, and the radiation from the hot zone into the crucible (5) changes. In particular, when the heater (1) is provided with the sub-heater (2) on the upper part, the change of the thermal environment is remarkable. The present invention has been made in view of the above points, and an object thereof is a single crystal pulling apparatus in which the thermal environment in the apparatus is always constant regardless of the movement of the crucible position due to the single crystal pulling. Is to provide.
上記目的を達成するために本発明によれば、原料融液を
収容するるつぼと、該るつぼの周囲に設けられたヒータ
ーと、るつぼ内を上下に移動し回転可能な引上軸および
るつぼを保持、回転するための下軸とよりなる単結晶引
上げ装置において、原料融液の上側におけるるつぼ側壁
の内側かつ該側壁とヒーター間に位置して、るつぼ側壁
上端の移動範囲を少なくとも被うように、るつぼ側壁の
内側かつ該側壁とヒーター間の全周にわたりヒーターか
らの輻射熱を遮断する熱遮蔽物を設けたことを特徴とす
る単結晶引上げ装置が提供される。前記のような二重円
筒壁からなる熱遮蔽物を設けると、ヒーター部分から固
液界面および結晶体部分への輻射による熱供給はこの熱
遮蔽物により制約される。さらに、この熱遮蔽物により
ヒーターの加熱によって対流ガスがるつぼの内側へ侵入
することを効果的に防ぐことができる。従って、るつぼ
の位置にかかわらず反応装置内の熱的環境は一定に維持
される。According to the present invention to achieve the above object, a crucible for containing a raw material melt, a heater provided around the crucible, and a pulling shaft and a crucible which can move up and down in the crucible and are rotatable. , In a single crystal pulling device consisting of a lower shaft for rotation, located inside the crucible side wall on the upper side of the raw material melt and between the side wall and the heater, so as to at least cover the moving range of the crucible side wall upper end, A single crystal pulling apparatus is provided, which is provided with a heat shield that shields radiant heat from the heater inside the crucible side wall and around the entire circumference between the side wall and the heater. When the heat shield composed of the double cylindrical wall as described above is provided, the heat supply from the heater portion to the solid-liquid interface and the crystal portion by radiation is restricted by the heat shield. Further, the heat shield can effectively prevent the convection gas from entering the inside of the crucible by the heating of the heater. Therefore, the thermal environment within the reactor remains constant regardless of the crucible position.
以下図面に示した実施例に基づいて本発明を説明する。 The present invention will be described below based on the embodiments shown in the drawings.
第１図（ａ）、（ｂ）は本発明による単結晶引上げ装置
の要部断面図である。加熱源はヒーター（１）とサブヒ
ーター（２）により構成されており、ヒーターの内側に
カーボンの二重円筒よりなる熱遮蔽物（６）が設けられ
ている。少なくともこの熱遮蔽物（６）は上下方向に、
るつぼ壁の移動範囲を被う十分な大きさをもっている。
るつぼ（５）は下軸（４）により保持されており、円筒
状るつぼ壁は前記熱遮蔽物（６）の二重円筒の中に挿入
されている。第１図（ａ）は単結晶引上げ開始時の状態
を示し、るつぼ（５）壁の上端が熱遮蔽物（６）の下端
に挿入されている。結晶が引上げられるにつれてるつぼ
は上昇し、最もるつぼ（５）が上昇した状態を第１図
（ｂ）が示す。この状態において、るつぼ（５）壁は熱
遮蔽物（６）内に納まるようになっている。1 (a) and 1 (b) are cross-sectional views of a main part of a single crystal pulling apparatus according to the present invention. The heating source is composed of a heater (1) and a sub-heater (2), and a heat shield (6) made of a double cylinder of carbon is provided inside the heater. At least this heat shield (6) is in the vertical direction,
It is large enough to cover the range of movement of the crucible wall.
The crucible (5) is held by the lower shaft (4) and the cylindrical crucible wall is inserted in the double cylinder of the heat shield (6). FIG. 1 (a) shows a state at the start of pulling a single crystal, in which the upper end of the crucible (5) wall is inserted into the lower end of the heat shield (6). The crucible ascends as the crystal is pulled up, and FIG. 1 (b) shows the most elevated crucible (5). In this state, the crucible (5) wall is adapted to fit inside the heat shield (6).
以上説明したように本発明によれば、原料融液の上側に
おけるるつぼ側壁の内側かつ該側壁とヒーター間に位置
して、るつぼ側壁上端の移動範囲を少なくとも被うよう
に、るつぼ側壁の内側かつ該側壁とヒーター間の全周に
わたりヒーターからの輻射熱を遮断する熱遮蔽物を設け
てあるため、単結晶の引上げ開始から終了まで、原料融
液および単結晶体周辺の熱的環境が円筒方向に一定に維
持されるという優れた効果がある。As described above, according to the present invention, the inside of the crucible side wall on the upper side of the raw material melt and located between the side wall and the heater, so as to cover at least the moving range of the upper side of the crucible side wall, the inside of the crucible side wall and Since the heat shield that blocks the radiant heat from the heater is provided over the entire circumference between the side wall and the heater, the thermal environment around the raw material melt and the single crystal is in the cylindrical direction from the start to the end of pulling the single crystal. It has the excellent effect of being maintained constant.
第１図は本発明にかかる単結晶引上げ装置の要部断面図
であり、第１図（ａ）は引上げ開始時、第１図（ｂ）は
引上げ終了時の状態を示す。第２図は従来の単結晶引上
げ装置の要部断面図であり、第２図（ａ）は引上げ開始
時、第２図（ｂ）は引上げ終了時の状態を示す。 １……ヒーター、２……サブヒーター、３……引上軸、
４……下軸、５……るつぼ、６……熱遮蔽物、７……原
料融液。FIG. 1 is a sectional view of a main part of a single crystal pulling apparatus according to the present invention. FIG. 1 (a) shows a state at the start of pulling and FIG. 1 (b) shows a state at the end of pulling. FIG. 2 is a sectional view of an essential part of a conventional single crystal pulling apparatus. FIG. 2 (a) shows a state at the start of pulling and FIG. 2 (b) shows a state at the end of pulling. 1 ... Heater, 2 ... Sub heater, 3 ... Pull-up shaft,
4 ... Lower axis, 5 ... Crucible, 6 ... Heat shield, 7 ... Raw material melt.
Claims (1)
周囲に設けられたヒーターと、るつぼ内を上下に移動し
回転可能な引上軸およびるつぼを保持、回転するための
下軸とよりなる単結晶引上げ装置において、原料融液の
上側におけるるつぼ側壁の内側かつ該側壁とヒーター間
に位置して、るつぼ側壁上端の移動範囲を少なくとも被
うように、るつぼ側壁の内側かつ該側壁とヒーター間の
全周にわたりヒーターからの輻射熱を遮断する熱遮蔽物
を設けたことを特徴とする単結晶引上げ装置。1. A crucible for accommodating a raw material melt, a heater provided around the crucible, a pull-up shaft movable up and down in the crucible and a lower shaft for holding and rotating the crucible. In the single crystal pulling apparatus consisting of, the inside of the crucible side wall on the upper side of the raw material melt and located between the side wall and the heater, so as to at least cover the moving range of the upper end of the crucible side wall, A single crystal pulling apparatus, which is provided with a heat shield that blocks radiant heat from the heater over the entire circumference between the heaters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23945087A JPH07106959B2 (en) | 1987-09-24 | 1987-09-24 | Single crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23945087A JPH07106959B2 (en) | 1987-09-24 | 1987-09-24 | Single crystal pulling device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6483594A JPS6483594A (en) | 1989-03-29 |
| JPH07106959B2 true JPH07106959B2 (en) | 1995-11-15 |
Family
ID=17044952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23945087A Expired - Lifetime JPH07106959B2 (en) | 1987-09-24 | 1987-09-24 | Single crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07106959B2 (en) |
-
1987
- 1987-09-24 JP JP23945087A patent/JPH07106959B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6483594A (en) | 1989-03-29 |
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