JPH0710934U - Glow discharge decomposition device - Google Patents
Glow discharge decomposition deviceInfo
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- JPH0710934U JPH0710934U JP4060293U JP4060293U JPH0710934U JP H0710934 U JPH0710934 U JP H0710934U JP 4060293 U JP4060293 U JP 4060293U JP 4060293 U JP4060293 U JP 4060293U JP H0710934 U JPH0710934 U JP H0710934U
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Abstract
(57)【要約】
【目的】 筒状基体上の周方向および軸方向の膜厚およ
び膜質の均一化を図り、しかも作業性のよいａ−Ｓｉ感
光体用のグロー放電分解装置を提供する。
【構成】 真空容器２中に保持される筒状基体４の周面
にａ−Ｓｉ系膜を成膜するグロ−放電分解装置におい
て、高周波電源１０の接地端子と導通した回転軸１６ｂ
を介して真空容器２の底体２ｂより基体４の回転を導入
すると共に、蓋体２ｃの下側に高周波電源１０の接地端
子と導通した位置決め部材１８および棒状体１７を設
け、その棒状体１７と摺擦する接触子を有する筒状体１
９を基体４の上方端に設けることにより、成膜に際して
基体上下の位置決めと導通とを同時に行なうことを特徴
とするグロー放電分解装置。
(57) [Summary] [PROBLEMS] To provide a glow discharge decomposition apparatus for an a-Si photoconductor, which has a uniform film thickness and film quality in the circumferential and axial directions on a cylindrical substrate and has good workability. In a glow discharge decomposition apparatus for forming an a-Si film on a peripheral surface of a cylindrical substrate 4 held in a vacuum container 2, a rotary shaft 16b electrically connected to a ground terminal of a high frequency power source 10.
The rotation of the base body 4 is introduced from the bottom body 2b of the vacuum container 2 via the positioning member 18 and the rod-shaped body 17 which are electrically connected to the ground terminal of the high-frequency power source 10 below the lid 2c. Cylindrical body 1 having contactor which rubs against
A glow discharge decomposition apparatus characterized in that by providing 9 at the upper end of the substrate 4, the vertical positioning and conduction of the substrate are performed simultaneously during film formation.
Description
【０００１】[0001]
本考案は、アモルファスシリコン系光導電層を有する電子写真感光体をグロー 放電プラズマＣＶＤ法を用いて製作するための、グロー放電分解装置の改良に関 するものである。 The present invention relates to an improvement of a glow discharge decomposition apparatus for manufacturing an electrophotographic photosensitive member having an amorphous silicon photoconductive layer by using a glow discharge plasma CVD method.
【０００２】[0002]
近年、アモルファスシリコン系光導電層を有する電子写真感光体が、その優れ た光感度特性や高い耐久性により、複写機や電子写真方式プリンタにおける市場 を拡大しつつある。 In recent years, electrophotographic photoreceptors having an amorphous silicon photoconductive layer have been expanding the market in copying machines and electrophotographic printers due to their excellent photosensitivity characteristics and high durability.
【０００３】 このアモルファスシリコン（以下、ａ−Ｓｉと略す）感光体の製作には、真空 容器中でグロー放電プラズマにより原料ガスを分解して基体上にａ−Ｓｉ系光導 電層を成膜する、グロー放電分解装置が使用される。このような従来のグロー放 電分解装置１の構成例を、図７に縦断面図で示す。図７において、金属製の真空 容器２は筒状体２ａと底体２ｂと蓋体２ｃとからなり、底体２ｂと蓋体２ｃは接 地されている。容器２の中央部には、感光体ドラムとなる筒状基体４が基体支持 体３ａと３ｂに保持されてほぼ垂直に配置される。これら支持体３ａと３ｂは、 基体４の延長部としてのダミーリングも兼ねている。基体４の内部には基体４を 所定の温度に加熱するためのヒーター５が設置されていて、図示しない外部の温 度制御手段と接続されている。また支持体３ｂには、容器２内の真空を保持しつ つ外部からの回転を導入するためにメカニカル真空シールとベアリングを内蔵し た回転導入端子６を介して、モーター等の回転駆動手段７が接続され、それによ り基体４を回転できるようになっている。容器２の内側には、基体４を取り囲む ように金属製の中空筒状電極８が設けられ、接地された底体２ｂおよび蓋体２ｃ とは、セラミックやテフロン等の絶縁リング９、９’により絶縁されている。電 極８は容器２の筒状体２ａと電気的に接続されており、高周波電源１０からの高 周波電力がマッチングボックス１１を介して印加される。また、電極８の内周面 には多数のガス噴出口１２が設けられており、ガス供給口１３から供給される原 料ガスが、電極８−基体４間のグロー放電空間に送り出される。成膜反応後の残 余ガスは、排気口１４を通して、図示しない外部の真空ポンプにより排気される 。なお、図中の矢印は、これらのガスの流れを表わしている。To manufacture this amorphous silicon (hereinafter abbreviated as a-Si) photoreceptor, a raw material gas is decomposed by glow discharge plasma in a vacuum container to form an a-Si-based photovoltaic layer on a substrate. , Glow discharge decomposition equipment is used. An example of the configuration of such a conventional glow discharge decomposition apparatus 1 is shown in a vertical sectional view in FIG. In FIG. 7, the metal vacuum container 2 comprises a cylindrical body 2a, a bottom body 2b and a lid body 2c, and the bottom body 2b and the lid body 2c are grounded. At the center of the container 2, a cylindrical substrate 4 serving as a photosensitive drum is held substantially vertically by the substrate supports 3a and 3b. These supports 3a and 3b also serve as a dummy ring as an extension of the base 4. A heater 5 for heating the substrate 4 to a predetermined temperature is installed inside the substrate 4 and is connected to an external temperature control means (not shown). Further, the support 3b is provided with a rotation driving means 7 such as a motor through a rotation introducing terminal 6 having a mechanical vacuum seal and a bearing incorporated therein for holding the vacuum in the container 2 and introducing rotation from the outside. Are connected so that the substrate 4 can be rotated. Inside the container 2, a metal hollow cylindrical electrode 8 is provided so as to surround the base body 4, and the bottom body 2b and the lid body 2c, which are grounded, are insulated by insulating rings 9 and 9'of ceramics or Teflon. It is insulated. The electrode 8 is electrically connected to the cylindrical body 2 a of the container 2, and high frequency power from the high frequency power source 10 is applied via the matching box 11. Further, a large number of gas ejection ports 12 are provided on the inner peripheral surface of the electrode 8, and the raw material gas supplied from the gas supply port 13 is sent to the glow discharge space between the electrode 8 and the substrate 4. The residual gas after the film forming reaction is exhausted through an exhaust port 14 by an external vacuum pump (not shown). The arrows in the figure represent the flow of these gases.
【０００４】 この装置１によりａ−Ｓｉ感光体を製作するには、まず、容器２内に基体４を セットし、排気口１４を通して真空ポンプにより容器２内を真空排気する。次い でヒーター５により基体４を所定の温度に加熱し、所定の流量に調整されたＳｉ Ｈ4 等の成膜用ガスや、Ｈ2 あるいはＨｅ等の希釈ガス、およびその他所望の特 性を得るための種々の不純物ガスからなる原料ガスを、ガス供給口１３からガス 噴出口１２を介して、所定のガス圧で電極８−基体４間に送り出す。それと共に 、高周波電源１０からの高周波電力をマッチングボックス１１を介して電極８に 印加すると、電極８−基体４間にグロー放電プラズマが発生し、原料ガスが分解 されて基体４上に光導電層や表面層などのａ−Ｓｉ系膜が成膜される。この成膜 中には、基体４は回転駆動手段７により自転し、ａ−Ｓｉ系膜の膜厚および膜質 の均一化を図っている。そして、成膜終了後に基体４を取り出し、ａ−Ｓｉ感光 体として使用する。In order to manufacture an a-Si photoconductor using the apparatus 1, first, the substrate 4 is set in the container 2 and the container 2 is evacuated by the vacuum pump through the exhaust port 14. Next, the substrate 5 is heated to a predetermined temperature by the heater 5, and a film forming gas such as Si H 4 adjusted to a predetermined flow rate, a diluting gas such as H 2 or He, and other desired characteristics are obtained. Raw material gases made of various impurity gases for obtaining are sent from the gas supply port 13 through the gas ejection port 12 to a predetermined gas pressure between the electrode 8 and the substrate 4. At the same time, when high frequency power from the high frequency power source 10 is applied to the electrode 8 through the matching box 11, glow discharge plasma is generated between the electrode 8 and the base body 4, the source gas is decomposed, and the photoconductive layer is formed on the base body 4. And an a-Si based film such as a surface layer are formed. During the film formation, the substrate 4 is rotated by the rotation driving means 7 to make the film thickness and film quality of the a-Si film uniform. After the film formation is completed, the substrate 4 is taken out and used as an a-Si photoconductor.
【０００５】[0005]
上記のような従来の装置１では、成膜されるａ−Ｓｉ系膜の膜厚および膜質を 均一化するための基体の支持および回転を、基体下側の片方からのみ行なってい る。そのため、回転時に基体上端部の振れが発生して、電極と基体との放電間隔 が周方向で一定に保たれず、周方向に均一な膜が得られないという問題点があっ た。また、基体の電気的な接地状態が上下で異なるため、軸方向でもグロー放電 が一様とならず、均一な膜が得られないという問題点があった。 In the conventional device 1 as described above, the support and rotation of the base for uniformizing the film thickness and film quality of the formed a-Si based film are performed only from one side below the base. Therefore, there is a problem in that the upper end of the substrate is shaken during rotation, the discharge interval between the electrode and the substrate is not kept constant in the circumferential direction, and a uniform film cannot be obtained in the circumferential direction. Moreover, since the electrical grounding state of the base differs vertically, there is a problem in that glow discharge is not uniform even in the axial direction and a uniform film cannot be obtained.
【０００６】 このような問題点に対して、ａ−Ｓｉ層の膜厚分布と電子写真特性の均一化を 目的として、特開昭６０−１７６０４７号には、円筒状電極の長手方向の長さを 円筒状基体の長さより長くし、円筒状基体の両端を円筒状ダミー部で保持するこ とが開示されている。しかし、これは装置の大型化を招く上に、回転時の基体の 振れにより基体の周方向で均一な膜が得られないという問題点は、改善されてい なかった。With respect to such a problem, in order to make the film thickness distribution of the a-Si layer and the electrophotographic characteristics uniform, Japanese Patent Laid-Open No. 176047/1985 discloses the length of the cylindrical electrode in the longitudinal direction. It is disclosed that the length is longer than the length of the cylindrical substrate, and both ends of the cylindrical substrate are held by the cylindrical dummy portions. However, this has not solved the problem that it causes an increase in the size of the apparatus and that a uniform film cannot be obtained in the circumferential direction of the substrate due to the vibration of the substrate during rotation.
【０００７】 上記のような基体の回転時の振れ対策としては、基体の支持および回転を基体 の上下でそれぞれ行なって基体の振れを抑制し、基体上下で接地状態が一様にな るようにする方法があり、次のような組合せがある。 イ）底体を介して回転を下から行ない、蓋体を介して上から回転を支持する。 ロ）蓋体を介して回転を上から行ない、底体を介して下から回転を支持する。 上記イ）の組合せでは、蓋体にも回転導入端子を設ける必要があるため、蓋体 の構造が複雑になり、蓋体の重量が増して作業性が悪化するという問題点がある 。また、基体を真空容器内にセットしたり成膜後に基体を取り出したりする際に 、基体上端と蓋体からの支持部材との嵌め合わせを調整せねばならず、これによ っても作業性が悪化するという問題点がある。さらに、回転導入端子には真空を 保持するためのシール部材が用いられているので、このシール部材と回転軸の接 触部からのこすれにより発生するゴミが基体へ落下して成膜不良を発生させたり 、シール部材からの真空漏れの要因が増えることにより、その点検や補修のため に装置の稼働率が低下するという問題点もある。As a measure against the shake of the base during rotation as described above, the base is supported and rotated above and below the base to suppress the shake of the base so that the grounding state becomes uniform above and below the base. There are the following combinations. A) Rotation is performed from below through the bottom body, and rotation is supported from above through the lid body. B) Rotation is performed from above via the lid, and rotation is supported from below via the bottom. In the combination of b) above, since it is necessary to provide the lid with the rotation introducing terminal, the structure of the lid becomes complicated, and the weight of the lid increases and the workability deteriorates. In addition, when setting the substrate in a vacuum container or taking out the substrate after film formation, the fitting between the upper end of the substrate and the support member from the lid must be adjusted, which also improves workability. However, there is a problem that is worse. Furthermore, since a seal member is used for holding the vacuum in the rotation introducing terminal, dust generated due to rubbing from the contact portion between this seal member and the rotating shaft falls onto the substrate to cause film formation failure. There is also a problem that the factor of vacuum leakage from the seal member increases and the operation rate of the device decreases due to inspection and repair.
【０００８】 一方、ロ）の組合せでは、蓋体に対して上記イ）に加えてさらに回転駆動手段 まで設けることになる。そのため、回転駆動手段を蓋体と一体に設けると蓋体の 重量がさらに増し、また蓋体に脱着可能に設けると煩雑な脱着作業が必要になる ので、いずれもイ）の問題点に加えてさらに作業性が悪化するという問題点があ る。On the other hand, in the combination of (b), in addition to the above (a), the rotary drive means is further provided for the lid. Therefore, if the rotation driving means is provided integrally with the lid body, the weight of the lid body is further increased, and if the rotation drive means is detachably provided to the lid body, a complicated attaching and detaching work is required. Further, there is a problem that workability deteriorates.
【０００９】 本考案は、上記の問題点に対して、筒状基体上の周方向および軸方向の膜厚お よび膜質の均一化を図り、しかも作業性のよい、ａ−Ｓｉ感光体用のグロー放電 分解装置を提供することを目的とする。In order to solve the above-mentioned problems, the present invention is intended for an a-Si photoconductor which has a uniform film thickness and film quality in the circumferential and axial directions on a tubular substrate and has good workability. It is an object of the present invention to provide a glow discharge decomposition device.
【００１０】[0010]
本考案のグロー放電分解装置は、外側にグロー放電生成用電源を設け且つ内部 に被成膜用筒状基体と電極手段とを配設した筒状真空容器が、接地された蓋体と 底体を有し、上記基体と蓋体及び底体を電気的に導通させると共に、上記電源の 出力端子と接地端子とをそれぞれ電極手段と基体とに電気的に導通させて、基体 と電極手段との間にプラズマを発生せしめるグロー放電分解装置であって、前記 蓋体の下側に設けた導電性棒状体と摺擦する導電性接触子を備えた筒状体を上記 基体の上方端に配設し、前記棒状体と接触子と筒状体とを介して基体と前記電源 の接地端子とを電気的に導通させると共に、前記底体を貫通する回転軸を介して 基体と前記電源の接地端子とを電気的に導通させつつ底体下部に設けられた回転 駆動手段により基体を回転させることを特徴とするものである。 The glow discharge decomposition apparatus of the present invention comprises a cylindrical vacuum container in which a power source for glow discharge generation is provided outside and a cylindrical substrate for film formation and electrode means are provided inside, and a lid body and a bottom body are grounded. And electrically connecting the base body to the lid and the bottom body, and electrically connecting the output terminal of the power source and the ground terminal to the electrode means and the base body, respectively. A glow discharge decomposing device for generating plasma between, and a cylindrical body having a conductive contact that rubs against a conductive rod-shaped body provided on the lower side of the lid is provided at the upper end of the base body. The base and the ground terminal of the power supply are electrically connected to each other through the rod-shaped body, the contact and the cylindrical body, and the base and the ground terminal of the power supply are connected through a rotary shaft that penetrates the bottom body. While electrically connecting and, the rotation drive means provided at the bottom of the bottom It is characterized in that the rotating body.
【００１１】[0011]
以下、本考案のグロー放電分解装置を実施例に基づいて詳細に説明する。 〔例１〕 図１に、本考案のグロー放電分解装置１５の実施例の概略構成を縦断面図で示 す。なお図１において、図７と同一箇所には同一符号を付す。筒状の金属製の真 空容器２は筒状体２ａと底体２ｂと蓋体２ｃとからなり、底体２ｂと蓋体２ｃは 接地されている。容器２の中央部には、感光体ドラムとなる筒状基体４が、基体 支持体１６により、下側から保持されてほぼ垂直に配置される。この支持体１６ は、基体４の延長部としてのダミーリングも兼ねた筒状部１６ａと、底体２ｂを 介して高周波電源１０の接地端子と導通した回転軸１６ｂとからなっている。基 体４の内部には基体４を所定の温度に加熱するためのヒーター５が設置されてい て、図示しない外部の温度制御手段と接続されている。また支持体１６の回転軸 １６ｂには、回転導入端子６を介してモーター等の回転駆動手段７が底体２ｂを 貫通して接続され、それにより基体４が自転できるようになっている。容器２の 筒状体２ａの内側には、基体４を取り囲むように金属製の中空筒状電極８が設け られ、接地された底体２ｂおよび蓋体２ｃとは、セラミックやテフロン等の絶縁 リング９、９’により絶縁されている。電極８は容器２の筒状体２ａと電気的に 接続されており、高周波電源１０の出力端子からの高周波電力がマッチングボッ クス１１を介して印加される。また、電極８の内周面には多数のガス噴出口１２ が設けられており、ガス供給口１３から供給される原料ガスが、所定のガス圧で 電極８−基体４間のグロー放電空間に送り出される。成膜反応後の残余ガスは、 排気口１４を通して図示しない外部の真空ポンプにより排気される。なお、図中 の矢印は、ガスの流れを表わしている。 Hereinafter, the glow discharge decomposition apparatus of the present invention will be described in detail based on embodiments. [Example 1] FIG. 1 is a vertical sectional view showing a schematic configuration of an embodiment of a glow discharge decomposition apparatus 15 of the present invention. In FIG. 1, the same parts as those in FIG. 7 are designated by the same reference numerals. The cylindrical metal empty container 2 is composed of a cylindrical body 2a, a bottom body 2b, and a lid body 2c, and the bottom body 2b and the lid body 2c are grounded. At the center of the container 2, a cylindrical substrate 4 serving as a photosensitive drum is held from below by a substrate support 16 and arranged substantially vertically. The supporting body 16 is composed of a cylindrical portion 16a which also serves as a dummy ring as an extension of the base body 4, and a rotating shaft 16b which is electrically connected to the ground terminal of the high frequency power source 10 via the bottom body 2b. A heater 5 for heating the base body 4 to a predetermined temperature is installed inside the base body 4 and is connected to an external temperature control means (not shown). Further, a rotation driving means 7 such as a motor is connected to the rotation shaft 16b of the support 16 through a rotation introduction terminal 6 so as to penetrate through the bottom body 2b, whereby the base body 4 can rotate. A hollow cylindrical electrode 8 made of metal is provided inside the cylindrical body 2a of the container 2 so as to surround the base body 4, and is insulated from the grounded bottom body 2b and lid 2c by an insulating ring such as ceramic or Teflon. Insulated by 9, 9 '. The electrode 8 is electrically connected to the tubular body 2 a of the container 2, and high frequency power from the output terminal of the high frequency power supply 10 is applied via the matching box 11. Further, a large number of gas ejection ports 12 are provided on the inner peripheral surface of the electrode 8, and the raw material gas supplied from the gas supply port 13 is supplied to the glow discharge space between the electrode 8 and the substrate 4 at a predetermined gas pressure. Sent out. The residual gas after the film forming reaction is exhausted through an exhaust port 14 by an external vacuum pump (not shown). The arrows in the figure represent the flow of gas.
【００１２】 蓋体２ｃの下側には、本考案の特徴部分である導電性棒状体１７と円板状の棒 状体位置決め部材１８とが、蓋体２ｃを介して高周波電源１０の接地端子と電気 的に導通して設置されている。一方、基体４の上方端には、内部に羽根状の導電 性接触子を有する筒状体１９が設置されて、棒状体１７と摺擦しつつ導通し、且 つ基体４と一体に回転するようになっている。また、この筒状体１９は、支持体 １６の筒状部１６ａと同じく、基体４の延長部としてのダミーリングも兼ねてい る。Below the lid 2c, a conductive rod-shaped body 17 and a disc-shaped rod-shaped body positioning member 18, which are characteristic parts of the present invention, are connected to the ground terminal of the high-frequency power source 10 via the lid 2c. It is installed in electrical communication with. On the other hand, at the upper end of the base body 4, a tubular body 19 having a blade-shaped conductive contact therein is installed, so that the rod-like body 17 is in sliding contact with the base body 4 and is electrically connected to the base body 4. It is like this. The tubular body 19 also serves as a dummy ring as an extension of the base body 4, like the tubular portion 16 a of the support 16.
【００１３】 図２に、これら棒状体１７と位置決め部材１８および筒状体１９の構造例を分 解斜視図で示す。筒状体１９は、部分断面図でその内部の構造も一部示した。導 電性棒状体１７は、つば状の頭部１７ａと棒状部１７ｂと、棒状部１７ｂの側面 に設けられた突起部１７ｃとからなる。突起部１７ｃは、この構造例では棒状部 １７ｂの側面から棒状に突起するように設けられている。この棒状体１７が嵌め 合わされる位置決め部材１８のほぼ中央には、棒状体１７の突起部１７ｃと嵌合 する切欠き部１８ｂを有する位置決め穴１８ａが設けられていて、棒状部１７ｂ を位置決め穴１８ａに挿入し、つば状頭部１７ａと位置決め部材１８を密着させ たときに突起部１７ｃと切欠き部１８ｂとが嵌合して、棒状体１７が固定される ようになっている。一方、筒状体１９の内部には、棒状部１７ｂと摺擦しつつ導 通をとるための複数の羽根状の導電性接触子１９ａが、棒状体１７が挿入された ときに棒状部１７ｂにバネ性を有して接触するように設けられている。棒状部１ ７ｂと羽根状の導電性接触子１９ａとは、基体４の自転に伴って筒状体１９が回 転する間も、両者の摺擦によって導通が保たれる。従って、棒状体１７が位置決 め部材１８および蓋体２ｃを介して接地と、また棒状体１７が筒状体１９と、さ らに筒状体１９が基体４の上方端とそれぞれ接触しているので、これらの組合せ により、基体４上部と接地との導通が確保される。筒状体１９の内部に設けられ る接触子１９ａには、上記の目的に適合するものであれば、例示した複数の羽根 状の他に、複数のブラシ状やワイヤ状、渦巻きバネ状などの種々の形状が採用で きる。FIG. 2 is an exploded perspective view showing a structural example of the rod-shaped body 17, the positioning member 18, and the tubular body 19. The tubular body 19 partially shows the internal structure in a partial sectional view. The conductive rod-shaped body 17 includes a brim-shaped head portion 17a, a rod-shaped portion 17b, and a protrusion portion 17c provided on a side surface of the rod-shaped portion 17b. In this structural example, the protruding portion 17c is provided so as to protrude in a rod shape from the side surface of the rod portion 17b. A positioning hole 18a having a notch portion 18b that fits with a projection 17c of the rod-shaped body 17 is provided at substantially the center of the positioning member 18 with which the rod-shaped body 17 is fitted. When the collar-shaped head 17a and the positioning member 18 are brought into close contact with each other and the protrusion 17c and the notch 18b are fitted to each other, the rod-shaped body 17 is fixed. On the other hand, inside the tubular body 19, a plurality of blade-shaped conductive contacts 19a for conducting while rubbing against the rod-shaped portion 17b are attached to the rod-shaped portion 17b when the rod-shaped body 17 is inserted. It has a spring property and is provided so as to be in contact. The rod-shaped portion 17b and the blade-shaped conductive contactor 19a are kept in conduction by the rubbing of both while the tubular body 19 rotates as the base body 4 rotates. Therefore, the rod-shaped body 17 comes into contact with the ground through the positioning member 18 and the lid body 2c, the rod-shaped body 17 comes into contact with the tubular body 19, and the tubular body 19 comes into contact with the upper end of the base body 4, respectively. Therefore, the combination of these ensures the continuity between the upper portion of the base 4 and the ground. As long as the contactor 19a provided inside the tubular body 19 meets the above-mentioned purpose, in addition to the plurality of blades illustrated above, a plurality of brushes, wires, spiral springs, and the like can be used. Various shapes can be adopted.
【００１４】 図３（ａ）〜（ｃ）には、棒状体１７と蓋体２ｃとの導通をより確実に取るた めの構成例の要部概略図を示した。同図（ａ）は、棒状体１７を蓋体２ｃに密着 させて導通を取るように、バネ性を有する導電性部材２０を用いて、棒状体１７ を位置決め部材１８ごと蓋体２ｃに押し付けるようにする例である。その際、位 置決め部材１８や導電性部材２０の位置決めおよび真空の保持を兼ねた、導電性 の枠体２１を設けるとよい。一方、同図（ｂ）は、バネ性を有する導電性部材２ ０を用いて、棒状体１７および位置決め部材１８と蓋体２ｃとの導通を取るよう にする例である。この際も、導電性の枠体２１を設けるとよい。また、同図（ｃ ）は、棒状体１７と蓋体２ｃとが直接に接触せず、枠体２１と導電性部材２０に より位置決め部材１８の固定と導通を行ない、棒状体１７の保持を行なうように する例である。この場合、棒状体１７と位置決め部材１８とは、両者の嵌合によ り固定される構造としてもよいし、棒状体１７を位置決め部材１８に固定する部 材を追加して設けてもよい。なお、これら導電性部材２０や枠体２１は必ずしも 必要なものではなく、また、この他にも導通を確保する目的で種々の構成を採る ことは、何ら差し支えない。3 (a) to 3 (c) are schematic views showing the main part of a configuration example for more surely establishing electrical continuity between the rod-shaped body 17 and the lid body 2c. In the same figure (a), the rod-shaped body 17 is pressed together with the positioning member 18 onto the lid body 2c by using the conductive member 20 having a spring property so that the rod-shaped body 17 is brought into close contact with the lid body 2c for electrical conduction. Is an example. At that time, it is preferable to provide a conductive frame body 21 that positions the positioning member 18 and the conductive member 20 and holds a vacuum. On the other hand, FIG. 2B shows an example in which the conductive member 20 having a spring property is used to establish conduction between the rod-shaped body 17, the positioning member 18, and the lid body 2c. Also in this case, the conductive frame body 21 may be provided. In addition, in the same figure (c), the rod-shaped body 17 and the lid body 2c do not directly contact each other, and the positioning member 18 is fixed and conducted by the frame body 21 and the conductive member 20, and the rod-shaped body 17 is held. This is an example of doing it. In this case, the rod-shaped body 17 and the positioning member 18 may be fixed by fitting them together, or a member for fixing the rod-shaped body 17 to the positioning member 18 may be additionally provided. The conductive member 20 and the frame body 21 are not always necessary, and other various structures may be adopted for the purpose of ensuring electrical continuity.
【００１５】 このグロー放電分解装置１５に基体４をセットする時には、容器２の蓋体２ｃ を開けて基体支持体１６に基体４を装着し、次いで基体４の上部に筒状体１９を 取り付ける。そして位置決め部材１８の位置を、筒状体１９に棒状体１７の棒状 部１７ｂが挿入され且つ基体４の回転の中心が振れないように調整し、その上部 より棒状体１７を、筒状体１９に棒状体１７の棒状部１７ｂが挿入されるように 取り付けて、蓋体２ｃを閉じる。When setting the base 4 in the glow discharge decomposition apparatus 15, the lid 2 c of the container 2 is opened, the base 4 is mounted on the base support 16, and then the tubular body 19 is mounted on the base 4. Then, the position of the positioning member 18 is adjusted so that the rod-shaped portion 17b of the rod-shaped body 17 is inserted into the tubular body 19 and the center of rotation of the base body 4 is not shaken. The rod-shaped body 17 is attached so that the rod-shaped portion 17b of the rod-shaped body 17 is inserted therein, and the lid 2c is closed.
【００１６】 基体４をセットした後の成膜工程は、前記した従来の工程と同様に行なわれる 。すなわち、排気口１４を通して真空ポンプにより容器２内を真空排気し、次い でヒーター５により基体４を所定の温度に加熱し、所定の流量に調整されたＳｉ Ｈ4 等の成膜用ガスや、Ｈ2 あるいはＨｅ等の希釈ガス、およびその他所望の特 性を得るためのIIIa族元素やＶa 族元素あるいは炭素（Ｃ）や窒素（Ｎ）や酸素 （Ｏ）等を含有する種々の不純物ガスからなる原料ガスを、ガス供給口１３から ガス噴出口１２を介して、所定のガス圧で電極８−基体４間に送り出す。それと 共に、高周波電源１０からの高周波電力をマッチングボックス１１を介して電極 ８に印加すると、電極８−基体４間にグロー放電プラズマが発生し、原料ガスが 分解されて基体４上に光導電層や表面層などのａ−Ｓｉ系膜が成膜される。この 成膜中に基体４は回転駆動手段７により自転するが、棒状体１７と筒状体１９に より、基体４上部の回転中心の位置決めが行なわれると共に接地との導通が確保 されるので、基体４の周方向および軸方向でのグロ−放電が安定し、ａ−Ｓｉ系 膜の膜厚および膜質の均一化が行なえる。The film forming process after setting the substrate 4 is performed in the same manner as the above-mentioned conventional process. That is, the inside of the container 2 is evacuated by the vacuum pump through the exhaust port 14, then the substrate 4 is heated by the heater 5 to a predetermined temperature, and a film forming gas such as Si H 4 or the like adjusted to a predetermined flow rate. , H 2 or He, etc., and various impurity gases containing IIIa group elements, Va group elements, carbon (C), nitrogen (N), oxygen (O), etc. for obtaining other desired characteristics. A raw material gas consisting of is supplied from the gas supply port 13 through the gas ejection port 12 at a predetermined gas pressure between the electrode 8 and the substrate 4. At the same time, when high frequency power from the high frequency power source 10 is applied to the electrode 8 through the matching box 11, glow discharge plasma is generated between the electrode 8 and the base body 4, the source gas is decomposed and the photoconductive layer is formed on the base body 4. And an a-Si based film such as a surface layer are formed. During the film formation, the base 4 rotates by the rotation driving means 7, but the rod-shaped body 17 and the cylindrical body 19 position the center of rotation of the upper part of the base 4 and ensure continuity with the ground. The glow discharge in the circumferential direction and the axial direction of the substrate 4 is stabilized, and the film thickness and film quality of the a-Si film can be made uniform.
【００１７】 上述のように、本考案のグロ−放電分解装置によれば、真空容器の蓋体には回 転導入端子などの複雑な機構の部品が付加されず、棒状体と筒状体の取付けも大 気中で容易に行なえることから、作業性のよいグロ−放電分解装置となる。また 、基体上方に設けた棒状体と筒状体により、基体上部の回転中心の位置決めが行 なわれると共に接地との導通が確保されるため、基体の周方向および軸方向での グロ−放電が安定し、基体上に成膜されるａ−Ｓｉ系膜の膜厚および膜質の均一 化が行なえるので、均一な電子写真特性を持つａ−Ｓｉ感光体を作製できるグロ −放電分解装置となる。As described above, according to the glow discharge decomposer of the present invention, the lid of the vacuum container does not have a complicated mechanical component such as the rotation introducing terminal, and the rod-shaped body and the tubular body are separated. Since it can be easily installed in the atmosphere, it is a glow discharge decomposition device with good workability. In addition, the rod-shaped body and the cylindrical body provided above the base body position the center of rotation of the base body and ensure continuity with the ground, so that glow discharge in the circumferential and axial directions of the base body is ensured. Since the film thickness and film quality of the a-Si film formed on the substrate are stable and uniform, it becomes a glow discharge decomposition apparatus capable of producing an a-Si photoconductor having uniform electrophotographic characteristics. .
【００１８】 以下、具体的な実験例を述べる。 本考案のグロ−放電分解装置１５に、表面を鏡面仕上げした直径３０ｍｍ、長 さ３００ｍｍの筒状アルミ基体をセットし、表１の成膜条件で、注入阻止層、光 導電層、表面層を積層してａ−Ｓｉ感光体Ａを作製した。Specific experimental examples will be described below. A cylindrical aluminum substrate having a diameter of 30 mm and a length of 300 mm, whose surface was mirror-finished, was set in the glow discharge decomposition apparatus 15 of the present invention, and the injection blocking layer, the photoconductive layer, and the surface layer were formed under the film forming conditions shown in Table 1. A-Si photoconductor A was produced by stacking.
【００１９】[0019]
【表１】 [Table 1]
【００２０】 このａ−Ｓｉ感光体Ａの膜厚分布を光学式膜厚計を用いて測定したところ、膜 厚ムラが周方向で１％以下、軸方向で３％以下、全体でも５％以下と、良好な結 果であった。When the film thickness distribution of the a-Si photoconductor A was measured using an optical film thickness meter, the film thickness unevenness was 1% or less in the circumferential direction, 3% or less in the axial direction, and 5% or less in total. It was a good result.
【００２１】 次に、電子写真特性として、以下の条件で帯電および光感度を測定した。帯電 は、表面電荷量０．２μＣ／ｃｍ2 の帯電条件での暗部表面電位を測定した。光 感度としては、暗部表面電位４２０Ｖに設定後、波長６８５ｎｍ、露光量０．４ ５μＪ／ｃｍ2 で露光を行なった後の明部表面電位を測定した。Next, as electrophotographic characteristics, charging and photosensitivity were measured under the following conditions. For charging, the dark part surface potential was measured under a charging condition of a surface charge amount of 0.2 μC / cm 2 . As the photosensitivity, after setting the dark part surface potential to 420 V, the light part surface potential after exposure at a wavelength of 685 nm and an exposure amount of 0.45 μJ / cm 2 was measured.
【００２２】 上記測定によるａ−Ｓｉ感光体Ａの帯電は４２０Ｖ、光感度は２０Ｖであり、 周方向および軸方向のムラは、それぞれ５％以下と良好な結果であった。According to the above measurement, the a-Si photoconductor A was charged at 420 V and the photosensitivity was 20 V, and the circumferential and axial unevenness was 5% or less, respectively, which was a good result.
【００２３】 〔例２〕 本考案のグロ−放電分解装置を、多数の基体に同時に成膜できる量産型成膜装 置に適用した例を、図４および図５に示す。図４は量産型グロ−放電分解装置２ ２の概略構成を示す縦断面図であり、図５はその横断面図である。なお、図４お よび図５の装置２２において、装置１５と同一機能を有する箇所には同一符号を 付す。筒状の金属製の真空容器２３は筒状の本体２３ａと蓋体２３ｂとからなり 、それぞれ接地されている。この装置２２においては、装置１５における底体２ ｂに相当する部分が、真空容器２３の底部として筒状の本体２３ａと一体に形成 されているが、本考案のグロ−放電分解装置における筒状真空容器の底体は、こ のような構成も含むものである。この容器２３の内部には、感光体ドラムとなる 複数本の筒状基体４が、複数の基体支持体１６により下側から保持されて、ほぼ 垂直に円状の配列で配置される。この支持体１６は、各基体４の延長部としての ダミーリングも兼ねた筒状部１６ａと、筒状の本体２３ａの底部を介して高周波 電源１０の接地端子と導通した回転軸１６ｂとからなっている。各基体４の内部 には基体４を所定の温度に加熱するためのヒーター５が設置されていて、図示し ない外部の温度制御手段と接続されている。また各支持体１６には、それぞれ回 転導入端子６を介して回転駆動手段７が筒状の本体２３ａの底部を貫通して接続 され、それにより各基体４が自転できるようになっている。この回転駆動手段７ は、各支持体１６毎に独立に設けてもよいし、ギヤやベルトやチェーンなどを用 いて共通化してもよい。容器２３の中央には、基体４の円状の配列の中心になる ように、金属製の中空筒状電極２４が設けられ、接地された蓋体２３ｂとは、セ ラミックやテフロン等の絶縁リング２５により絶縁されている。電極２４には、 高周波電源１０の出力端子からの高周波電力がマッチングボックス１１を介して 印加される。また、電極２４の外周面には多数のガス噴出口２６が設けられてお り、ガス供給口２７から供給される原料ガスが、所定のガス圧で電極２４−基体 ４間のグロー放電空間に送り出される。成膜反応後の残余ガスは、排気口２８を 通して図示しない真空ポンプにより排気される。なお、図中の矢印は、ガスの流 れを表わしている。蓋体２３ｂの下側には、各基体４に対応して位置決め穴が設 けられたドーナツ板状の位置決め部材２９が設けられ、棒状体１７が、接地され た蓋体２３ｂまたは筒状の本体２３ａと電気的に導通して各基体４の回転中心に 対応するように、各位置決め穴に設置されている。一方、各基体４の上方端には 、棒状体１７と摺擦しつつ基体４と一体に回転する筒状体１９が設置されていて 、筒状体１９に棒状体１７が挿入されることにより、各基体４の上部の位置決め および接地との導通を行なう。この筒状体１９は、支持体１６の筒状部１６ａと 同じく各基体４の延長部としてのダミーリングも兼ねている。Example 2 An example in which the glow discharge decomposition apparatus of the present invention is applied to a mass-production type film forming apparatus capable of simultaneously forming a film on a large number of substrates is shown in FIGS. 4 and 5. FIG. 4 is a vertical sectional view showing a schematic configuration of the mass production type glow discharge decomposition apparatus 22 and FIG. 5 is a horizontal sectional view thereof. In addition, in the device 22 shown in FIGS. 4 and 5, the parts having the same functions as those of the device 15 are designated by the same reference numerals. The cylindrical metal vacuum container 23 is composed of a cylindrical main body 23a and a lid 23b, and is grounded. In this device 22, the part corresponding to the bottom body 2b in the device 15 is integrally formed with the cylindrical main body 23a as the bottom part of the vacuum container 23. However, the cylindrical shape in the glow discharge decomposition device of the present invention. The bottom of the vacuum container also includes such a structure. Inside the container 23, a plurality of cylindrical substrates 4 serving as photosensitive drums are held from below by a plurality of substrate supports 16 and arranged in a substantially vertical circular array. The support body 16 is composed of a tubular portion 16a which also serves as a dummy ring as an extension of each base body 4, and a rotary shaft 16b which is electrically connected to the ground terminal of the high frequency power source 10 through the bottom portion of the tubular main body 23a. ing. A heater 5 for heating the base 4 to a predetermined temperature is installed inside each base 4, and is connected to an external temperature control means (not shown). Further, the rotation driving means 7 is connected to each support member 16 through the rotation introducing terminal 6 so as to penetrate through the bottom portion of the cylindrical main body 23a, whereby each base member 4 can rotate. The rotation drive means 7 may be provided independently for each support body 16, or may be shared by using gears, belts, chains or the like. A metal hollow cylindrical electrode 24 is provided in the center of the container 23 so as to be at the center of the circular array of the bases 4, and is insulated from the grounded lid 23b by an insulating ring such as ceramic or Teflon. It is insulated by 25. High frequency power from the output terminal of the high frequency power supply 10 is applied to the electrode 24 via the matching box 11. Further, a large number of gas ejection ports 26 are provided on the outer peripheral surface of the electrode 24, and the source gas supplied from the gas supply port 27 enters the glow discharge space between the electrode 24 and the base body 4 at a predetermined gas pressure. Sent out. The residual gas after the film forming reaction is exhausted through a gas exhaust port 28 by a vacuum pump (not shown). The arrows in the figure represent the flow of gas. A donut plate-shaped positioning member 29 having positioning holes corresponding to each base body 4 is provided below the lid 23b, and the rod-shaped body 17 is grounded to the lid 23b or the tubular body. It is installed in each positioning hole so as to be electrically connected to 23a and correspond to the center of rotation of each substrate 4. On the other hand, at the upper end of each base body 4, a tubular body 19 is installed that rotates integrally with the base body 4 while rubbing against the rod-shaped body 17. By inserting the rod-shaped body 17 into the tubular body 19, , The upper part of each substrate 4 is positioned and electrically connected to the ground. The tubular body 19 also serves as a dummy ring as an extension of each base body 4, like the tubular portion 16 a of the support body 16.
【００２４】 この装置２２に基体４をセットする時には、容器２３の蓋体２３ｂを開けて各 基体支持体１６にそれぞれ基体４を装着し、次いで各基体４の上端にそれぞれ筒 状体１９を取り付ける。そしてドーナツ板状の位置決め部材２９を、各位置決め 穴が各基体４の回転中心に対応するようにセットして、棒状体１７を各筒状体１ ９に接触するように挿入した後、蓋体２３ｂを閉じる。この装置２２においても 、蓋体２３ｂには回転導入端子などの複雑な機構の部品が付加されず、位置決め 部材２９と棒状体１７の取り付けも大気中で容易に行なえるので、作業性のよい 量産型グロ−放電分解装置となる。When setting the base body 4 in the device 22, the lid body 23 b of the container 23 is opened, the base body 4 is attached to each base body support body 16, and then the tubular body 19 is attached to the upper end of each base body 4. . Then, the donut plate-shaped positioning member 29 is set so that each positioning hole corresponds to the center of rotation of each base body 4, and the rod-shaped body 17 is inserted so as to come into contact with each cylindrical body 19, and then the lid body is inserted. Close 23b. Also in this device 22, since a lid 23b does not have a complicated mechanical component such as a rotation introduction terminal, and the positioning member 29 and the rod-shaped body 17 can be easily attached in the atmosphere, mass production with good workability is achieved. It becomes a type glow discharge decomposition device.
【００２５】 基体４をセットした後の成膜工程は、前記した従来の工程と同様に行なわれる 。すなわち、排気口２８を通して真空ポンプにより容器２３内を真空排気し、次 いでヒーター５により各基体４を所定の温度に加熱し、所定の流量に調整された ＳｉＨ4 等の成膜用ガスや、Ｈ2 あるいはＨｅ等の希釈ガス、およびその他所望 の特性を得るためのIIIa族元素やＶa 族元素あるいはＣやＮやＯ等を含有する種 々の不純物ガスからなる原料ガスを、ガス供給口２７からガス噴出口２６を介し て、所定のガス圧で電極２４−各基体４間に送り出す。それと共に、高周波電源 １０の出力端子からの高周波電力をマッチングボックス１１を介して電極２４に 印加すると、電極２４−各基体４間にグロー放電プラズマが発生し、原料ガスが 分解されて各基体４上に光導電層や表面層などのａ−Ｓｉ系膜が成膜される。こ の成膜中には、各基体４は回転駆動手段７により自転するが、棒状体１７と筒状 体１９により、各基体４上部の回転中心の位置決めが行なわれると共に接地との 導通が確保されるため、各基体４の周方向および軸方向でのグロ−放電が安定し 、ａ−Ｓｉ系膜の膜厚および膜質の均一化が行なえる。The film forming process after setting the substrate 4 is performed in the same manner as the conventional process described above. That is, the inside of the container 23 is evacuated by the vacuum pump through the exhaust port 28, then each substrate 4 is heated to a predetermined temperature by the heater 5, and a film forming gas such as SiH 4 adjusted to a predetermined flow rate, A gas supply port 27 is used to supply a diluent gas such as H 2 or He, and other source gases made of various impurity gases containing a Group IIIa element or a Va group element or C, N, O or the like for obtaining desired characteristics. The gas is sent out from the electrode 24 to each substrate 4 at a predetermined gas pressure via the gas ejection port 26. At the same time, when high-frequency power from the output terminal of the high-frequency power source 10 is applied to the electrode 24 via the matching box 11, glow discharge plasma is generated between the electrode 24 and each substrate 4, and the raw material gas is decomposed to decompose each substrate 4. An a-Si-based film such as a photoconductive layer or a surface layer is formed on top. During the film formation, each substrate 4 is rotated by the rotation driving means 7, but the rod-shaped body 17 and the cylindrical body 19 position the center of rotation of each substrate 4 and ensure continuity with the ground. Therefore, the glow discharge in the circumferential direction and the axial direction of each substrate 4 is stabilized, and the film thickness and film quality of the a-Si based film can be made uniform.
【００２６】 また、このような量産型グロ−放電分解装置における位置決め部材２９の取付 けについては、位置決め部材２９を蓋体２３ｂと直接には接触させず、筒状の本 体２３ａに固定するようにしてもよい。そのような量産型グロ−放電分解装置３ ０の例を、図６に縦断面図で示す。図６において図４と同一箇所には、同一符号 を付している。この装置３０においては、位置決め部材２９は、筒状の真空容器 本体２３ａの上方内側に形成された顎部２３ｃに載置されて固定され、この顎部 ２３ｃと筒状の本体２３ａを介して接地と導通している。また、棒状体１７と接 地との導通をより確実にするために、バネ性を有する導電性部材３１を用いて、 蓋体２３ｂと棒状体１７あるいは位置決め部材２９とを導通させてもよい。Regarding the attachment of the positioning member 29 in such a mass production type glow discharge decomposition apparatus, the positioning member 29 is fixed to the cylindrical main body 23a without directly contacting with the lid 23b. You may An example of such a mass production type glow discharge decomposition apparatus 30 is shown in a vertical sectional view in FIG. 6, the same parts as those in FIG. 4 are designated by the same reference numerals. In this device 30, the positioning member 29 is mounted and fixed on a jaw portion 23c formed inside the tubular vacuum container body 23a at the upper side thereof, and is grounded via the jaw portion 23c and the tubular body 23a. It is in continuity with. Further, in order to ensure the electrical connection between the rod-shaped body 17 and the ground, a conductive member 31 having a spring property may be used to electrically connect the lid body 23b to the rod-shaped body 17 or the positioning member 29.
【００２７】 以下、具体的な実験例を述べる。 本考案のグロ−放電分解装置２２に、表面を鏡面仕上げした直径３０ｍｍ、長 さ３００ｍｍの筒状アルミ基体計１６本をセットし、表２の成膜条件で、注入阻 止層、光導電層、表面層を積層したａ−Ｓｉ感光体Ｂ１〜Ｂ１６を作製した。Specific experimental examples will be described below. In the glow discharge decomposition apparatus 22 of the present invention, 16 cylindrical aluminum substrates having a diameter of 30 mm and a length of 300 mm with mirror-finished surfaces were set, and the injection blocking layer and the photoconductive layer were formed under the film forming conditions shown in Table 2. , A-Si photoconductors B1 to B16 in which surface layers were laminated were produced.
【００２８】[0028]
【表２】 [Table 2]
【００２９】 これらのａ−Ｓｉ感光体Ｂ１〜Ｂ１６の膜厚分布を光学式膜厚計を用いて測定 したところ、各感光体Ｂ１〜Ｂ１６での膜厚ムラがそれぞれ周方向で１％以下、 軸方向で３％以下、全体でも５％以下と、良好な結果であった。When the film thickness distribution of each of the a-Si photoconductors B1 to B16 was measured using an optical film thickness meter, the film thickness unevenness of each of the photoconductors B1 to B16 was 1% or less in the circumferential direction. Good results were obtained, with the axial direction being 3% or less, and the total being 5% or less.
【００３０】 次に、電子写真特性として、〔例１〕と同じ条件で帯電および光感度を測定し た。その結果、ａ−Ｓｉ感光体Ｂ１〜Ｂ１６の帯電は全て４２０±１０Ｖ、光感 度は全て２０±０．５Ｖであり、各感光体での周方向および軸方向のムラは、そ れぞれ５％以下と良好な結果であった。Next, as electrophotographic characteristics, charging and photosensitivity were measured under the same conditions as in [Example 1]. As a result, the a-Si photoconductors B1 to B16 are all charged to 420 ± 10V and the photosensitivity is 20 ± 0.5V, and the circumferential and axial unevenness of each photoconductor is different. It was a good result of 5% or less.
【００３１】 〔例３〕 図７に示した従来のグロー放電分解装置１に、表面を鏡面仕上げした直径３０ ｍｍ、長さ３００ｍｍの筒状アルミ基体をセットし、表１と同じ成膜条件で、注 入阻止層、光導電層、表面層を積層したａ−Ｓｉ感光体Ｃを作製した。Example 3 A cylindrical aluminum substrate having a diameter of 30 mm and a length of 300 mm, the surface of which was mirror-finished, was set in the conventional glow discharge decomposition apparatus 1 shown in FIG. Then, an a-Si photoconductor C in which the injection blocking layer, the photoconductive layer and the surface layer were laminated was produced.
【００３２】 このａ−Ｓｉ感光体Ｃの膜厚分布を光学式膜厚計を用いて測定したところ、膜 厚ムラが周方向で５％、軸方向で１５％、全体でも２０％と、〔例１〕に比べて 劣る結果であった。When the film thickness distribution of the a-Si photoconductor C was measured by using an optical film thickness meter, the film thickness unevenness was 5% in the circumferential direction, 15% in the axial direction, and 20% in total. The result was inferior to that of Example 1].
【００３３】 また、電子写真特性として、〔例１〕と同じ条件で帯電および光感度を測定し たところ、帯電および光感度の中心値は〔例１〕とほぼ同様であったが、周方向 のムラが帯電、光感度共に５％、軸方向のムラが帯電で１０％、光感度で２０％ と、いずれも〔例１〕に比べて劣る結果であった。As the electrophotographic characteristics, when the charging and photosensitivity were measured under the same conditions as in [Example 1], the center values of charging and photosensitivity were almost the same as in [Example 1], but in the circumferential direction. The unevenness was 5% in both charging and photosensitivity, and the unevenness in the axial direction was 10% in charging and 20% in photosensitivity, which were all inferior to those in [Example 1].
【００３４】 〔例４〕 図８のように、本考案のグロ−放電分解装置２２から棒状体１７と位置決め部 材２９を取り除き、各筒状体１９を図７に示した基体支持体３ａに替えた、量産 型グロ−放電分解装置３２を用いて、〔例２〕と同様にしてａ−Ｓｉ感光体Ｄ１ 〜Ｄ１６を作製した。Example 4 As shown in FIG. 8, the rod-shaped body 17 and the positioning member 29 are removed from the glow discharge decomposition apparatus 22 of the present invention, and each tubular body 19 is replaced with the base body support body 3a shown in FIG. Using the replaced mass-production type glow discharge decomposition device 32, a-Si photoconductors D1 to D16 were produced in the same manner as in [Example 2].
【００３５】 これらのａ−Ｓｉ感光体Ｄ１〜Ｄ１６の膜厚分布を光学式膜厚計を用いて測定 したところ、各感光体Ｄ１〜Ｄ１６での膜厚ムラがそれぞれ周方向で５％、軸方 向で２０％、全体では３０％と、いずれも〔例２〕に比べて劣る結果であった。 次に、電子写真特性として、〔例１〕と同じ条件で帯電および光感度を測定し たところ、ａ−Ｓｉ感光体Ｄ１〜Ｄ１６の帯電および光感度の中心値は〔例２〕 とほぼ同様であった。しかし、各感光体でのムラは、帯電が周方向で５％、軸方 向で１２％、全体で２０％であり、光感度が周方向で５％、軸方向で３０％、全 体で５０％であって、いずれも〔例２〕に比べて劣る結果であった。When the film thickness distribution of each of the a-Si photoconductors D1 to D16 was measured using an optical film thickness meter, the film thickness unevenness of each of the photoconductors D1 to D16 was 5% in the circumferential direction, 20% in all directions and 30% in total, which were inferior to those of [Example 2]. Next, as the electrophotographic characteristics, when the charging and photosensitivity were measured under the same conditions as in [Example 1], the center values of charging and photosensitivity of the a-Si photoconductors D1 to D16 were almost the same as in [Example 2]. Met. However, the unevenness of each photoconductor is 5% in the circumferential direction, 12% in the axial direction, and 20% in total, and the photosensitivity is 5% in the circumferential direction, 30% in the axial direction, and the total is 20%. It was 50%, which were all inferior to [Example 2].
【００３６】[0036]
以上詳述したように、本考案により筒状基体上の周方向および軸方向の膜厚お よび膜質の均一化が図れ、しかも作業性のよいａ−Ｓｉ感光体用のグロー放電分 解装置を提供することができた。 As described in detail above, according to the present invention, a glow discharge decomposing device for an a-Si photoconductor, which can achieve uniform film thickness and film quality in the circumferential and axial directions on a cylindrical substrate and has good workability, is provided. Could be provided.
【００３７】 本考案の装置によれば、真空容器上部や蓋体に複雑な機構の回転導入端子を設 ける必要がないので、基体のセットや取り出しの作業性がよく、しかも装置の製 作コストも削減される。According to the device of the present invention, since it is not necessary to provide a rotation introducing terminal of a complicated mechanism on the upper portion of the vacuum container or the lid, the workability of setting and taking out the substrate is good, and the manufacturing cost of the device is high. Is also reduced.
【００３８】 また本考案の装置によれば、真空容器上部や蓋体に複雑な機構の回転導入端子 を設ける必要がないので、装置稼働時に真空漏れの原因となる真空シール部が増 えず、信頼性の高い成膜装置となる。Further, according to the device of the present invention, since it is not necessary to provide a rotation introducing terminal of a complicated mechanism on the upper part of the vacuum container or the lid, the vacuum seal part which causes a vacuum leak cannot be increased during the operation of the device. The film forming apparatus has high reliability.
【００３９】 さらに本考案により、成膜時の回転による基体の振れが抑制されて基体周方向 の膜厚および膜質の均一化が行なえると共に、基体上下での接地との導通状態が 一様になることから基体軸方向の膜厚および膜質の均一化も行なえるので、均一 な電子写真特性を有するａ−Ｓｉ感光体が作製できるグロ−放電分解装置を提供 することができた。Further, according to the present invention, the shake of the substrate due to the rotation during the film formation is suppressed, the film thickness and film quality in the substrate circumferential direction can be made uniform, and the conductive state with the ground above and below the substrate is made uniform. As a result, the film thickness and film quality in the axial direction of the substrate can be made uniform, so that it is possible to provide a glow discharge decomposition apparatus capable of producing an a-Si photoconductor having uniform electrophotographic characteristics.
【図１】本考案のグロー放電分解装置の概略構成を示す
縦断面図である。FIG. 1 is a vertical sectional view showing a schematic configuration of a glow discharge decomposition apparatus of the present invention.
【図２】本考案の棒状体と筒状体の分解斜視図である。FIG. 2 is an exploded perspective view of a rod-shaped body and a cylindrical body of the present invention.
【図３】（ａ）〜（ｃ）は本考案の棒状体と筒状体の構
成例を示す要部断面概略図である。3 (a) to 3 (c) are schematic cross-sectional views of a main part showing a configuration example of a rod-shaped body and a cylindrical body of the present invention.
【図４】本考案のグロー放電分解装置の他の実施例の概
略構成を示す縦断面図である。FIG. 4 is a vertical sectional view showing a schematic configuration of another embodiment of the glow discharge decomposition apparatus of the present invention.
【図５】本考案のグロー放電分解装置の他の実施例の横
断面図である。FIG. 5 is a cross-sectional view of another embodiment of the glow discharge decomposition apparatus of the present invention.
【図６】本考案のグロー放電分解装置の他の実施例の概
略構成を示す縦断面図である。FIG. 6 is a vertical sectional view showing a schematic structure of another embodiment of the glow discharge decomposition apparatus of the present invention.
【図７】従来のグロー放電分解装置の概略構成を示す縦
断面図である。FIG. 7 is a vertical sectional view showing a schematic configuration of a conventional glow discharge decomposition apparatus.
【図８】従来のグロー放電分解装置の他の実施例の概略
構成を示す縦断面図である。FIG. 8 is a vertical sectional view showing a schematic configuration of another embodiment of the conventional glow discharge decomposition apparatus.
２、２３・・・真空容器 ２ｂ・・・・・底体 ２ｃ、２３ｂ・蓋体 ４・・・・・・基体 ８、２４・・・電極 １６・・・・・基体支持体 １６ｂ・・・・回転軸 １７・・・・・導電性棒状体 １８、２９・・位置決め部材 １９・・・・・筒状体 2, 23 ... Vacuum container 2b ... Bottom body 2c, 23b / Lid body 4 ... Base body 8, 24 ... Electrode 16 ... Base body support body 16b ...・ Rotary shaft 17 ・ ・ ・ Conductive rod 18, 29 ・ ・ Positioning member 19 ・ ・ ・ Cylindrical body
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 31/0248 Ｈ０５Ｈ 1/46 9014−2Ｇ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 31/0248 H05H 1/46 9014-2G
Claims (1)
内部に被成膜用筒状基体と電極手段とを配設した筒状真
空容器が、接地された蓋体と底体を有し、上記基体と蓋
体及び底体を電気的に導通させると共に、上記電源の出
力端子と接地端子とをそれぞれ電極手段と基体とに電気
的に導通させて、基体と電極手段との間にプラズマを発
生せしめるグロー放電分解装置であって、前記蓋体の下
側に設けた導電性棒状体と摺擦する導電性接触子を備え
た筒状体を上記基体の上方端に配設し、前記棒状体と接
触子と筒状体とを介して基体と前記電源の接地端子とを
電気的に導通させると共に、前記底体を貫通する回転軸
を介して基体と前記電源の接地端子とを電気的に導通さ
せつつ底体下部に設けられた回転駆動手段により基体を
回転させることを特徴とするグロ−放電分解装置。1. A cylindrical vacuum container having a glow discharge generating power source on the outside and a film-forming cylindrical substrate and electrode means arranged inside has a lid body and a bottom body which are grounded, The base body, the lid, and the bottom body are electrically connected to each other, and the output terminal and the ground terminal of the power source are electrically connected to the electrode means and the base body, respectively, so that plasma is generated between the base body and the electrode means. A glow discharge decomposing device for generating, wherein a cylindrical body provided with a conductive contact provided on a lower side of the lid and slidingly rubbed with the conductive rod is disposed at an upper end of the base, The base body and the ground terminal of the power source are electrically connected to each other via the body, the contactor, and the tubular body, and the base body and the ground terminal of the power source are electrically connected to each other via a rotating shaft penetrating the bottom body. It is characterized in that the base is rotated by the rotation driving means provided at the bottom of the bottom body while conducting to the base. A characteristic glow discharge decomposition device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4060293U JPH0710934U (en) | 1993-07-26 | 1993-07-26 | Glow discharge decomposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4060293U JPH0710934U (en) | 1993-07-26 | 1993-07-26 | Glow discharge decomposition device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0710934U true JPH0710934U (en) | 1995-02-14 |
Family
ID=12585070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4060293U Pending JPH0710934U (en) | 1993-07-26 | 1993-07-26 | Glow discharge decomposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0710934U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100877401B1 (en) * | 2007-10-31 | 2009-01-07 | 김재일 | Plasma Apparatus for Air Pollutant Treatment |
| JP2010013717A (en) * | 2008-07-07 | 2010-01-21 | Canon Inc | Deposited film formation device |
| JP2010031363A (en) * | 2008-06-30 | 2010-02-12 | Canon Inc | Deposition film forming apparatus |
| JP2010251008A (en) * | 2009-04-13 | 2010-11-04 | Denso Corp | Plasma generator |
| JP2011257657A (en) * | 2010-06-10 | 2011-12-22 | Canon Inc | Forming method and forming device of electrophotographic photoreceptor |
| JP2013060626A (en) * | 2011-09-13 | 2013-04-04 | Canon Inc | Deposition film forming method |
-
1993
- 1993-07-26 JP JP4060293U patent/JPH0710934U/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100877401B1 (en) * | 2007-10-31 | 2009-01-07 | 김재일 | Plasma Apparatus for Air Pollutant Treatment |
| JP2010031363A (en) * | 2008-06-30 | 2010-02-12 | Canon Inc | Deposition film forming apparatus |
| JP2010013717A (en) * | 2008-07-07 | 2010-01-21 | Canon Inc | Deposited film formation device |
| JP2010251008A (en) * | 2009-04-13 | 2010-11-04 | Denso Corp | Plasma generator |
| JP2011257657A (en) * | 2010-06-10 | 2011-12-22 | Canon Inc | Forming method and forming device of electrophotographic photoreceptor |
| JP2013060626A (en) * | 2011-09-13 | 2013-04-04 | Canon Inc | Deposition film forming method |
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