JPH0712068B2 - Insulation board for electrical equipment - Google Patents
Insulation board for electrical equipmentInfo
- Publication number
- JPH0712068B2 JPH0712068B2 JP61040723A JP4072386A JPH0712068B2 JP H0712068 B2 JPH0712068 B2 JP H0712068B2 JP 61040723 A JP61040723 A JP 61040723A JP 4072386 A JP4072386 A JP 4072386A JP H0712068 B2 JPH0712068 B2 JP H0712068B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- weight
- substrate
- layer
- metal substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
- H10W70/68—Shapes or dispositions thereof
- H10W70/6875—Shapes or dispositions thereof being on a metallic substrate, e.g. insulated metal substrates [IMS]
Landscapes
- Insulating Bodies (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、たとえば混成集積回路のような電気装置用絶
縁基板の改良に関する。Description: FIELD OF THE INVENTION The present invention relates to improvements in insulating substrates for electrical devices such as hybrid integrated circuits.
（従来技術） 従来混成集積回路用基板のような電気装置用絶縁基板に
は電気絶縁性に優れたセラミック基板が主として用いら
れている。しかしセラミックは機械的強度、特に抗折力
が弱く、加工することができない。またセラミック基板
は、基板が大きくなるにしたがって平坦度が悪くなり、
このためセラミックで大形の基板を作ることは困難であ
る。(Prior Art) Conventionally, a ceramic substrate excellent in electrical insulation is mainly used as an insulating substrate for an electric device such as a substrate for a hybrid integrated circuit. However, ceramics have weak mechanical strength, especially bending strength, and cannot be processed. Moreover, the flatness of the ceramic substrate becomes worse as the substrate becomes larger.
Therefore, it is difficult to make a large-sized substrate with ceramics.
このためセラミック基板に代えて金属基体を用いること
が考えられている。金属基体の場合は、この上に形成す
る電子回路を金属基体から絶縁する必要があり、各種方
法が提案されている。例えば鉄を主成分とする金属基体
を用いる場合、この表面にガラス層を形成した基板が提
案されており、更に金属基体上に酸化物層を形成し、そ
の上にガラス層を形成して、ガラス層が金属表面に密着
するようにした基板も提案されている。Therefore, it has been considered to use a metal substrate instead of the ceramic substrate. In the case of a metal base, it is necessary to insulate the electronic circuit formed thereon from the metal base, and various methods have been proposed. For example, when using a metal substrate containing iron as a main component, a substrate having a glass layer formed on the surface thereof has been proposed. Further, an oxide layer is formed on the metal substrate, and a glass layer is formed on the oxide layer. Substrates in which the glass layer is in close contact with the metal surface have also been proposed.
しかしこの基板を厚膜用の混成集積回路用基板として用
いた場合、次のような問題がある。即ち厚膜用の場合、
基板上にガラス質絶縁物層を形成する時、又は基板上に
電子回路を形成する時、いずれも800℃以上の高温で焼
く工程が繰返されるため、密着性が劣化し、ガラス層が
金属表面から剥離することがある。However, when this substrate is used as a thick film hybrid integrated circuit substrate, the following problems occur. That is, for thick film,
When forming a glassy insulating layer on a substrate or forming an electronic circuit on a substrate, the process of baking at a high temperature of 800 ° C or higher is repeated, resulting in poor adhesion and a glass layer with a metal surface. May peel off.
（発明が解決しようとする技術的課題） 本発明は、この問題を解決すべくなされたもので、その
目的とするところは、厚膜用電子回路の焼成を繰返して
も絶縁層と金属基体表面との密着性が低下せず、両者間
での密着性に優れた電気装置用絶縁基板を得んとするも
のである。(Technical problem to be solved by the invention) The present invention has been made to solve this problem, and an object of the present invention is to provide an insulating layer and a metal substrate surface even if firing of a thick film electronic circuit is repeated. The purpose of the present invention is to obtain an insulating substrate for an electric device which is excellent in the adhesiveness between the two without lowering the adhesiveness with.
（技術的課題を解決するための手段） すなわちこの発明は、クロム10〜30重量％、アルミニウ
ム0.05〜７重量％を含む鉄合金、又はクロム10〜30重量
％、アルミニウム0.05〜７重量％、チタン0.1〜３重量
％を含む鉄合金、あるいはクロム10〜30重量％、シリコ
ン0.1〜３重量％含む鉄合金からなる金属基体と、この
金属基体の表面に形成された酸化被膜と、この酸化被膜
上に酸化被膜とガラスの反応によって形成された反応層
と、この反応層を介して上記酸化被膜上に形成されたガ
ラス質絶縁物層とを具備してなる電気装置用絶縁基板で
ある。(Means for Solving the Technical Problem) That is, the present invention is an iron alloy containing 10 to 30 wt% chromium and 0.05 to 7 wt% aluminum, or 10 to 30 wt% chromium, 0.05 to 7 wt% aluminum, and titanium. A metal base made of an iron alloy containing 0.1 to 3% by weight, or an iron alloy containing 10 to 30% by weight of chromium and 0.1 to 3% by weight of silicon, an oxide film formed on the surface of the metal substrate, and an oxide film formed on the oxide film. An insulating substrate for an electric device, comprising: a reaction layer formed by the reaction of an oxide film with glass; and a glassy insulating layer formed on the oxide film via the reaction layer.
以下この発明を図示する実施例を参照して説明する。本
発明にかかる電気装置用絶縁基板は、金属基体１の表面
に酸化被膜層２を形成しその上に反応層３を形成し、更
に反応層３のうえにガラス質絶縁物層４を形成してい
る。The present invention will be described below with reference to the illustrated embodiments. In the insulating substrate for an electric device according to the present invention, an oxide film layer 2 is formed on the surface of a metal substrate 1, a reaction layer 3 is formed thereon, and a glassy insulator layer 4 is further formed on the reaction layer 3. ing.
金属基体１は、クロム10〜30％含む鉄合金である。この
鉄合金は、アルミニウムや鉄と異なり、加工性、耐食
性、耐熱性がいずれも優れ、金属基体として最適なもの
である。この範囲としたのは、含有量が少ないと、上述
した効果が発揮されず、また多すぎると材料の加工性が
悪くなるためである。鉄合金にアルミニウムを添加した
理由は、アルミニウム酸化物に富む酸化被膜を得るため
である。即ち、酸化被膜にアルミニウム酸化物が多い
と、ガラス質物質と酸化被膜との反応が過度に進行せ
ず、酸化被膜が残存するためである。しかも製造された
基板上において回路の焼成を繰返しても両者間の密着性
は余り劣化しない。このような効果は、シリコンの添加
によっても同様に得られる。アルミニウムまたはシリコ
ンの添加量を上記範囲に限定した理由は、少くなすぎる
とこの効果が発揮されず、多すぎると材料の加工性が悪
くなるためである。またチタンは、金属基体と酸化物層
との密着性を向上させるために添加し、少なすぎるとこ
の効果が発揮されず多すぎると材料の加工性が悪くなる
ためである。次いで金属基体１の表面に加熱処理等によ
り酸化被膜層２を形成する。この酸化被膜層２は、ガラ
ス質絶縁物層４に対して金属基体１よりも密着性が良
く、金属基体１とガラス質絶縁物層４の密着性を向上さ
せることができる。この膜厚は0.04〜５μｍ特に0.1〜
２μｍが好適である。厚すぎると金属基体１と酸化被膜
２との密着性が部分的に悪くなる場合があり、薄すぎる
と後の焼成工程等で酸化被膜２が全てガラスと反応して
反応層３となってしまうためである。次にこの酸化被膜
２の上にガラス質絶縁物層４、例えば、ホウケイ酸鉛を
主成分とする結晶化ガラスを印刷等の手段により形成す
る。次いでこれを焼成して、酸化被膜層とガラス質絶縁
物層とを反応させて両者の境界部分に反応層を形成す
る。この反応層の介在によりガラス質絶縁層と酸化被膜
層との密着性を向上する。この反応層の膜厚は、もとの
酸化被膜の厚さから反応後において残存している酸化被
膜の厚さを引いた値にほぼ等しく、少なくとも数十オン
グストロームあることが望ましい。残存する酸化被膜の
膜厚があまり薄いと、基板上に厚膜電子回路を形成する
ための回路形成ペースト焼成中に焼成が進行して、酸化
被膜が全て反応層になってしまう恐れがあるためであ
る。The metal substrate 1 is an iron alloy containing 10 to 30% chromium. Unlike iron and iron, this iron alloy has excellent workability, corrosion resistance, and heat resistance, and is optimal as a metal substrate. The reason for setting this range is that if the content is too small, the above-mentioned effects are not exhibited, and if it is too large, the workability of the material is deteriorated. The reason for adding aluminum to the iron alloy is to obtain an oxide film rich in aluminum oxide. That is, when the oxide film contains a large amount of aluminum oxide, the reaction between the glassy substance and the oxide film does not proceed excessively, and the oxide film remains. Moreover, even if the circuit is repeatedly fired on the manufactured substrate, the adhesion between the two does not significantly deteriorate. Such an effect can be similarly obtained by adding silicon. The reason why the addition amount of aluminum or silicon is limited to the above range is that this effect is not exhibited when the amount is too small, and the workability of the material is deteriorated when the amount is too large. Further, titanium is added in order to improve the adhesion between the metal substrate and the oxide layer. If it is too small, this effect is not exhibited, and if it is too large, the workability of the material deteriorates. Next, the oxide film layer 2 is formed on the surface of the metal substrate 1 by heat treatment or the like. The oxide film layer 2 has better adhesion to the glassy insulator layer 4 than the metal substrate 1, and can improve the adhesion between the metal substrate 1 and the glassy insulator layer 4. This film thickness is 0.04-5 μm, especially 0.1-
2 μm is preferred. If it is too thick, the adhesion between the metal substrate 1 and the oxide film 2 may be partially deteriorated, and if it is too thin, the oxide film 2 entirely reacts with the glass to form the reaction layer 3 in the subsequent firing step or the like. This is because. Next, a glassy insulating layer 4, for example, a crystallized glass containing lead borosilicate as a main component is formed on the oxide film 2 by a means such as printing. Then, this is fired to react the oxide film layer and the glassy insulating layer to form a reaction layer at the boundary between the two. The interposition of this reaction layer improves the adhesion between the glassy insulating layer and the oxide film layer. The film thickness of the reaction layer is substantially equal to the value obtained by subtracting the thickness of the oxide film remaining after the reaction from the original thickness of the oxide film, and is preferably at least several tens of angstroms. If the remaining oxide film is too thin, the baking may progress during the baking of the circuit forming paste for forming the thick film electronic circuit on the substrate, and the oxide film may become the reaction layer altogether. Is.
（発明の効果） この発明によれば酸化被膜層とガラス質絶縁物層との間
に密着性の優れた反応層を形成し、しかも酸化被膜も確
実に残存するので、焼成時に熱膨脹係数差によって金属
基体とガラス質絶縁物層との間に応力が働いても、両者
の密着性が大きいためガラス質絶縁物層の剥離を確実に
防止することができる。(Effects of the Invention) According to the present invention, a reaction layer having excellent adhesion is formed between the oxide film layer and the glassy insulating layer, and since the oxide film surely remains, the difference in the coefficient of thermal expansion during firing causes a difference. Even if a stress acts between the metal substrate and the glassy insulating layer, the adhesion between the two is great, so that peeling of the glassy insulating layer can be reliably prevented.
実施例 15クロム−４アルミニウム−鉄合金からなる金属基体を
大気中、900℃、10分で処理して酸化被膜を形成し、次
いでこの上にガラス質絶縁物をスクリーン印刷した後乾
燥し、しかる後850℃大気中で10分間焼成して反応層を
形成せしめた。このようにして得られた絶縁基板をIMA
で調べたところ、酸化被膜及び反応層が共に存在し、ガ
ラス成分の拡散は酸化被膜中全部には、及んでいないこ
とが確認された。Example 15 A metal substrate made of a chrome-4aluminum-iron alloy is treated at 900 ° C. for 10 minutes in the atmosphere to form an oxide film, and then a glassy insulating material is screen-printed and dried. Then, it was baked in the atmosphere at 850 ° C. for 10 minutes to form a reaction layer. The insulating substrate thus obtained is
As a result of the examination, it was confirmed that both the oxide film and the reaction layer were present, and the diffusion of the glass component did not reach the entire oxide film.
比較例 18クロム−鉄合金からなる金属基体を900℃、大気中、1
0分で処理して酸化被膜を形成した。次にこれにガラス
質絶縁物をスクリーン印刷により形成したのち、850
℃、大気中で10分間焼成して絶縁基板を得た。この絶縁
基板を調べたところ酸化被膜及び反応層が共に存在して
いた。Comparative Example 18 A metal base made of a chromium-iron alloy was heated at 900 ° C. in air for 1
The treatment was performed for 0 minutes to form an oxide film. Next, a glassy insulator is formed on this by screen printing, and then 850
An insulating substrate was obtained by firing in air at 10 ° C for 10 minutes. When this insulating substrate was examined, both an oxide film and a reaction layer were present.
このようにして得られた両絶縁基板試料を850℃で60分
焼成したところ比較例のものは、ガラス絶縁物層が剥離
してしまった。これに対して実施例のものは、30kg/5mm
φの密着強度を示した。比較例のものが剥離したのは、
850℃で60分間焼成したために残存する酸化被膜層がな
くなってしまったためである。When both insulating substrate samples thus obtained were baked at 850 ° C. for 60 minutes, the glass insulating layer was peeled off in the comparative example. On the other hand, the example is 30 kg / 5 mm
The adhesion strength of φ was shown. The thing of the comparative example peeled off,
This is because the remaining oxide film layer has disappeared after baking at 850 ° C for 60 minutes.
図面は本発明の一実施例を示す断面図である。 １……金属基体、２……酸化被膜層、３……反応層、４
……ガラス質絶縁物層。The drawings are sectional views showing an embodiment of the present invention. 1 ... Metal substrate, 2 ... Oxide film layer, 3 ... Reaction layer, 4
...... Glass insulator layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 八代 利之 埼玉県川口市芝5925の４ (56)参考文献 特開 昭60−214583（ＪＰ，Ａ) 特開 昭53−32376（ＪＰ，Ａ) 特開 昭53−116473（ＪＰ，Ａ) 特開 昭56−164592（ＪＰ，Ａ) 特公 昭59−17879（ＪＰ，Ｂ２) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiyuki Yashiro 4 5925 5925 Shiba, Kawaguchi City, Saitama Prefecture (56) References JP-A-60-214583 (JP, A) JP-A-53-32376 (JP, A) Special Kai 53-116473 (JP, A) JP 56-164592 (JP, A) JP 59-17879 (JP, B2)
Claims (5)
７重量％を含む鉄合金からなる金属基体と、この金属基
体の表面に形成されたアルミニウム酸化物に富む酸化被
膜と、この酸化被膜上に酸化被膜とガラスの反応によっ
て形成された反応層と、この反応層を介して上記酸化被
膜上に形成されたガラス質絶縁物層とを具備してなる電
気装置用絶縁基板。1. Chromium 10 to 30% by weight, aluminum 0.05 to
A metal substrate made of an iron alloy containing 7% by weight, an aluminum oxide-rich oxide film formed on the surface of the metal substrate, and a reaction layer formed on the oxide film by a reaction between the oxide film and glass, An insulating substrate for an electric device, comprising a glassy insulator layer formed on the oxide film via the reaction layer.
ウム0.05〜７重量％、チタン0.1〜３重量％を含む鉄合
金である特許請求の範囲第１項記載の電気装置用絶縁基
板。2. The insulating substrate for an electric device according to claim 1, wherein the metal substrate is an iron alloy containing 10 to 30% by weight of chromium, 0.05 to 7% by weight of aluminum and 0.1 to 3% by weight of titanium.
ン0.1〜３重量％を含む鉄合金である特許請求の範囲第
１項記載の電気装置用絶縁基板。3. The insulating substrate for an electric device according to claim 1, wherein the metal substrate is an iron alloy containing 10 to 30% by weight of chromium and 0.1 to 3% by weight of silicon.
ウム0.05〜７重量％、シリコン0.1〜３重量％を含む鉄
合金である特許請求の範囲第１項記載の電気装置用絶縁
基板4. The insulating substrate for an electric device according to claim 1, wherein the metal substrate is an iron alloy containing 10 to 30% by weight of chromium, 0.05 to 7% by weight of aluminum and 0.1 to 3% by weight of silicon.
ウム0.05〜７重量％、シリコン0.1〜３重量％、チタン
0.1〜３重量％を含む鉄合金である特許請求の範囲第１
項記載の電気装置用絶縁基板。5. A metal substrate comprising 10 to 30% by weight of chromium, 0.05 to 7% by weight of aluminum, 0.1 to 3% by weight of silicon, and titanium.
Claim 1 which is an iron alloy containing 0.1 to 3% by weight.
An insulating substrate for an electric device according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61040723A JPH0712068B2 (en) | 1986-02-26 | 1986-02-26 | Insulation board for electrical equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61040723A JPH0712068B2 (en) | 1986-02-26 | 1986-02-26 | Insulation board for electrical equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62198138A JPS62198138A (en) | 1987-09-01 |
| JPH0712068B2 true JPH0712068B2 (en) | 1995-02-08 |
Family
ID=12588522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61040723A Expired - Fee Related JPH0712068B2 (en) | 1986-02-26 | 1986-02-26 | Insulation board for electrical equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712068B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2356396B (en) * | 1999-10-07 | 2003-11-19 | Rolls Royce Plc | A metallic article having a protective coating and a method of applying a protective coating to a metallic article |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5917879B2 (en) | 2011-10-18 | 2016-05-18 | 日本無線株式会社 | Modulation method identification device |
-
1986
- 1986-02-26 JP JP61040723A patent/JPH0712068B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5917879B2 (en) | 2011-10-18 | 2016-05-18 | 日本無線株式会社 | Modulation method identification device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62198138A (en) | 1987-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0355998B1 (en) | Glass ceramic substrate having electrically conductive film | |
| US6013357A (en) | Power module circuit board and a process for the manufacture thereof | |
| JPH0712068B2 (en) | Insulation board for electrical equipment | |
| JPH03179793A (en) | Surface structure of ceramic board and manufacture thereof | |
| JP2989975B2 (en) | Method for manufacturing aluminum nitride substrate | |
| JPH0679444B2 (en) | Electric film | |
| JPS62198137A (en) | Insulating substrate for electric device | |
| JPH04279831A (en) | platinum temperature sensor | |
| JPS62198187A (en) | Insulating board for electric apparatus | |
| JPH01145887A (en) | Insulating substrate for electric device and manufacture thereof | |
| JPH0436478B2 (en) | ||
| JP2960644B2 (en) | Surface-treated aluminum nitride substrate | |
| JPH036679B2 (en) | ||
| JPS6367552B2 (en) | ||
| JPH0297686A (en) | Production of enameled substrate | |
| JP2536612B2 (en) | Method of manufacturing substrate for semiconductor device having excellent heat dissipation | |
| JPH05251837A (en) | Circuit board | |
| JPH1125754A (en) | Copper metallized composition and method for producing glass ceramic substrate | |
| JPH0563108B2 (en) | ||
| JPS62198188A (en) | Insulating board for electric apparatus | |
| JPH02153883A (en) | High thermal conductivity base and its production | |
| JPH0436106B2 (en) | ||
| JPS60103190A (en) | Production of enamel coated steel sheet | |
| JPS62197373A (en) | Metallization of aluminum nitride sintered body | |
| JPH025551A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |