JPH07161920A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPH07161920A JPH07161920A JP30811093A JP30811093A JPH07161920A JP H07161920 A JPH07161920 A JP H07161920A JP 30811093 A JP30811093 A JP 30811093A JP 30811093 A JP30811093 A JP 30811093A JP H07161920 A JPH07161920 A JP H07161920A
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- temperature detection
- type transistor
- low
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、低温時に駆動能力が低
下する半導体集積回路の低電圧回路に利用する。本発明
は、温度検出回路を内蔵し温度変化による駆動能力の低
下を防止することができる半導体集積回路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is used for a low voltage circuit of a semiconductor integrated circuit whose driving ability is lowered at low temperature. The present invention relates to a semiconductor integrated circuit having a built-in temperature detection circuit and capable of preventing a decrease in driving ability due to a temperature change.
【０００２】[0002]
【従来の技術】ＭＯＳトランジスタの駆動能力に影響す
るものとして次の要因が挙げられる。その一つは電子の
移動度であり、他の一つはＭＯＳトランジスタのソース
・ゲート間電圧（ＶGS）−スレッショルド電圧（ＶTH）
である。2. Description of the Related Art The following factors can be cited as factors that affect the driving capability of MOS transistors. One is electron mobility, and the other is the source-gate voltage (V GS ) -threshold voltage (V TH ) of the MOS transistor.
Is.
【０００３】電子の移動度は高温時に低くなり低温時に
高くなる。スレッショルド電圧（ＶTH）は高温時に低く
低温時に高くなる。ソース・ゲート間電圧（ＶGS）が高
いときスレッショルド電圧（ＶTH）の影響は、電子の移
動度に比べほとんど無視できるが、ソース・ゲート間電
圧（ＶGS）が低くなるときスレッショルド電圧（ＶTH）
の影響が電子の移動度による影響を上回る。したがっ
て、電源電圧が低くなると駆動能力はスレッショルド電
圧：−ＶTHに比例するので高温時には高くなり、低温時
には低くなる。The mobility of electrons is low at high temperatures and high at low temperatures. The threshold voltage (V TH ) is low at high temperatures and high at low temperatures. When the source-gate voltage (V GS ) is high, the influence of the threshold voltage (V TH ) is almost negligible compared to the electron mobility, but when the source-gate voltage (V GS ) is low, the threshold voltage (V TH ) is low. TH )
Influences more than the mobility of electrons. Therefore, the driving capability lower the supply voltage is the threshold voltage: high at high temperatures is proportional to -V TH, it becomes low at low temperatures.
【０００４】ここで、インバータ回路を例にして説明す
る。図５は従来例における一般的なインバータ回路の構
成を示したものであり、図６（ａ）および（ｂ）は従来
例における制御信号付インバータ回路の構成を示したも
のである。このインバータ回路は電源間にＮ型トランジ
スタとＰ型トランジスタとを直列に接続して構成され
る。このインバータ回路の場合は入力信号の変化時に貫
通電流が流れるため、各トランジスタの電源側に抵抗を
直列接続して貫通電流を抑制している。これによりトラ
ンジスタの駆動能力が低下する。その対策を施した駆動
能力補正回路を図７に示す。直列に接続された抵抗と並
列にＰ型トランジスタおよびＮ型トランジスタを接続
し、外部制御信号によりＰ型トランジスタおよびＮ型ト
ランジスタをＯＮさせると、インバータ回路としての駆
動能力は向上する。Here, an inverter circuit will be described as an example. FIG. 5 shows the configuration of a general inverter circuit in the conventional example, and FIGS. 6A and 6B show the configuration of a control signal added inverter circuit in the conventional example. This inverter circuit is configured by connecting an N-type transistor and a P-type transistor in series between power supplies. In the case of this inverter circuit, a through current flows when the input signal changes, so a resistor is connected in series to the power source side of each transistor to suppress the through current. As a result, the driving ability of the transistor is reduced. FIG. 7 shows a drive capability correction circuit that takes measures against this. When a P-type transistor and an N-type transistor are connected in parallel with a resistor connected in series and the P-type transistor and the N-type transistor are turned on by an external control signal, the driving capability of the inverter circuit is improved.
【０００５】温度検出回路としてはサーミスタを用いる
のが一般的であり、例えば、図８に示すような特開昭６
３−２４７９８９号公報に開示されている回路がある
が、サーミスタは金属の焼結体を用いているので半導体
集積回路に内蔵することは不可能である。A thermistor is generally used as the temperature detecting circuit. For example, as shown in FIG.
Although there is a circuit disclosed in Japanese Patent Laid-Open No. 247989/1993, it is impossible to incorporate the thermistor in a semiconductor integrated circuit because it uses a sintered metal body.
【０００６】[0006]
【発明が解決しようとする課題】このような従来の駆動
能力補正回路では、温度変動による駆動能力低下に対応
するには、集積回路の外部にサーミスタなどを用いて温
度検出回路を構成し、その回路の出力を制御信号として
集積回路に入力する必要があるために、集積回路に一体
化することは不可能である。In such a conventional drive capacity correction circuit, in order to cope with the decrease in drive capacity due to temperature fluctuation, a temperature detection circuit is constructed by using a thermistor or the like outside the integrated circuit. Since the output of the circuit needs to be input to the integrated circuit as a control signal, it cannot be integrated into the integrated circuit.
【０００７】本発明はこのような背景のもとに行われた
ものであって、温度検出回路を集積回路に一体化し、温
度変動による駆動能力の低下に対応することができる回
路を提供することを目的とする。The present invention has been made under such a background, and provides a circuit in which a temperature detection circuit is integrated with an integrated circuit and it is possible to cope with a decrease in driving ability due to temperature fluctuation. With the goal.
【０００８】[0008]
【課題を解決するための手段】本発明は、論理ゲートの
駆動電流通路に挿入された駆動能力補正回路と、温度検
出回路とを一つの基板上に備え、この駆動能力補正回路
は前記温度検出回路の検出出力にしたがって温度が低い
ときに前記論理ゲートの駆動電流が大きくなるように設
定されたことを特徴とする。According to the present invention, a drive capacity correction circuit inserted in a drive current path of a logic gate and a temperature detection circuit are provided on one substrate, and the drive capacity correction circuit is provided with the temperature detection circuit. The drive current of the logic gate is set to increase when the temperature is low according to the detection output of the circuit.
【０００９】前記温度検出回路の検出出力通路にヒステ
リシス回路が挿入され、前記温度検出回路は、ＭＯＳト
ランジスタと、このＭＯＳトランジスタのソースまたは
ドレイン電流通路に挿入された抵抗器とを備え、前記駆
動能力補正回路は、抵抗器と、この抵抗器の両端にドレ
イン電極およびソース電極が接続されゲート電極が制御
端子に接続されたＭＯＳトランジスタとを備えることが
望ましい。A hysteresis circuit is inserted in the detection output path of the temperature detection circuit, and the temperature detection circuit comprises a MOS transistor and a resistor inserted in the source or drain current path of the MOS transistor, and the drive capability is provided. The correction circuit preferably includes a resistor and a MOS transistor having a drain electrode and a source electrode connected to both ends of the resistor and a gate electrode connected to a control terminal.
【００１０】[0010]
【作用】温度検出回路の抵抗は高温になるとその抵抗値
が高くなり、低温になるとその抵抗値は低くなる。ま
た、Ｐ型トランジスタは、低温環境において、高温時に
スレッショルド電圧が下がるために抵抗値が低くなり、
低温時にスレッショルド電圧が上がるために抵抗値は高
くなる。そのために、温度検出回路の検出出力は高温時
に電圧が高くなり、低温時に電圧が低くなる。The resistance of the temperature detecting circuit becomes high when the temperature becomes high, and becomes low when the temperature becomes low. Further, the P-type transistor has a low resistance value in a low temperature environment because the threshold voltage decreases at a high temperature,
Since the threshold voltage increases at low temperatures, the resistance value increases. Therefore, the detection output of the temperature detection circuit has a high voltage at high temperatures and a low voltage at low temperatures.
【００１１】ヒステリシス回路を介挿する場合には、温
度検出回路の検出出力が入力したときに、入力電圧が高
い方から低くなるときのしきい値と、低い方から高くな
るときのしきい値とが異なるので、温度検出回路の出力
の微妙な変化により駆動能力補正回路が不必要に頻繁に
オンまたはオフすることにより雑音が発生することが防
止される。In the case of inserting a hysteresis circuit, when the detection output of the temperature detection circuit is input, the threshold value when the input voltage becomes lower from the higher side and the threshold value when the input voltage becomes higher from the lower side. Therefore, it is possible to prevent noise from being generated by the driving capability correction circuit being turned on or off unnecessarily frequently due to a slight change in the output of the temperature detection circuit.
【００１２】これにより、半導体集積回路を低温時に低
電圧で使用したときに生じるトランジスタの駆動能力の
悪化を防止することができる。As a result, it is possible to prevent the driving capability of the transistor from being deteriorated when the semiconductor integrated circuit is used at a low voltage at a low temperature.
【００１３】[0013]
【実施例】次に、本発明実施例を図面に基づいて説明す
る。図１は本発明実施例の構成を示す回路図、図２
（ａ）および（ｂ）は本発明実施例における温度検出回
路の構成例を示す図である。Embodiments of the present invention will now be described with reference to the drawings. 1 is a circuit diagram showing the configuration of an embodiment of the present invention, FIG.
(A) And (b) is a figure which shows the structural example of the temperature detection circuit in the Example of this invention.
【００１４】本発明実施例は、論理ゲートの駆動電流通
路に挿入された駆動能力補正回路１１と、温度検出回路
１０とを一つの基板上に備え、この駆動能力補正回路１
１は温度検出回路１０の検出出力にしたがって温度が低
いときに前記論理ゲートの駆動電流が大きくなるように
設定され、温度検出回路１０の検出出力通路にヒステリ
シス回路６が挿入され、温度検出回路１０には、ＭＯＳ
トランジスタと、このＭＯＳトランジスタのソースまた
はドレイン電流通路に挿入された抵抗８とを備え、駆動
能力補正回路１１には、抵抗５と、この抵抗５の両端に
ドレイン電極およびソース電極が接続されゲート電極が
制御端子に接続されたＭＯＳトランジスタとを備える。In the embodiment of the present invention, a driving ability correction circuit 11 inserted in a driving current path of a logic gate and a temperature detection circuit 10 are provided on one substrate, and the driving ability correction circuit 1 is provided.
1 is set according to the detection output of the temperature detection circuit 10 so that the drive current of the logic gate becomes large when the temperature is low, and the hysteresis circuit 6 is inserted in the detection output passage of the temperature detection circuit 10. Has a MOS
The MOS transistor includes a transistor and a resistor 8 inserted in a source or drain current path of the MOS transistor. The driving capability correction circuit 11 includes a resistor 5 and a drain electrode and a source electrode connected to both ends of the resistor 5 and a gate electrode. And a MOS transistor connected to the control terminal.
【００１５】本実施例では、論理ゲートの駆動電流通路
に第一のＰ型トランジスタ１および第一のＮ型トランジ
スタ２が配置され、駆動能力補正回路１１のＭＯＳトラ
ンジスタとして第二のＰ型トランジスタ３および第二の
Ｎ型トランジスタ４がそれぞれ備えられ、温度検出回路
１０のＭＯＳトランジスタとして図２（ａ）に示す構成
の場合にはＰ型トランジスタ７が備えられ、同図（ｂ）
に示す場合にはＮ型トランジスタ９が備えられる。In this embodiment, the first P-type transistor 1 and the first N-type transistor 2 are arranged in the drive current path of the logic gate, and the second P-type transistor 3 is used as the MOS transistor of the drive capability correction circuit 11. And a second N-type transistor 4 are provided respectively, and a P-type transistor 7 is provided as the MOS transistor of the temperature detection circuit 10 in the case of the configuration shown in FIG. 2A, and FIG.
In the case shown in, the N-type transistor 9 is provided.
【００１６】第二のＰ型トランジスタ３および第二のＮ
型トランジスタ４にはヒステリシス回路６からの出力が
入力され、このヒステリシス回路６には温度検出回路１
０からの出力が入力される。図２（ａ）および（ｂ）は
本発明実施例における温度検出回路の構成例を示したも
のである。同図（ａ）の場合は電源間にＰ型トランジス
タ７と抵抗８が直列に接続されて構成される。抵抗８は
高温になるとその抵抗値が高くなり、低温になるとその
抵抗値は低くなる。また、Ｐ型トランジスタ７は低電圧
環境下において高温時にスレッショルド電圧（ＶTH）が
下がるために、抵抗値は低くなり、低温時にスレッショ
ルド電圧（ＶTH）が上がるために抵抗値は高くなる。そ
の結果、温度検出回路１０からの出力Ａは図３に示すよ
うに高温時に電圧が高くなり、低温時に低くなる特性が
得られる。この出力をヒステリシス回路６に出力する。
ヒステリシス回路６は図３に示す特性を有しており、入
力電圧が高い方から低くなるときのしきい値と、低い方
から高くなるときのしいき値とが異なるので、温度検出
回路１０の出力の微妙な変化により駆動能力補正回路が
オンまたはオフを繰り返すことを防止することができ
る。The second P-type transistor 3 and the second N
The output from the hysteresis circuit 6 is input to the type transistor 4, and the temperature detection circuit 1 is connected to the hysteresis circuit 6.
The output from 0 is input. 2A and 2B show a configuration example of the temperature detection circuit in the embodiment of the present invention. In the case of FIG. 7A, a P-type transistor 7 and a resistor 8 are connected in series between the power supplies. The resistance value of the resistor 8 becomes high when the temperature becomes high, and becomes low when the temperature becomes low. Further, the P-type transistor 7 has a low resistance value because the threshold voltage (V TH ) decreases at a high temperature in a low voltage environment, and has a high resistance value at a low temperature because the threshold voltage (V TH ) increases. As a result, as shown in FIG. 3, the output A from the temperature detection circuit 10 has a characteristic that the voltage is high at high temperatures and low at low temperatures. This output is output to the hysteresis circuit 6.
The hysteresis circuit 6 has the characteristics shown in FIG. 3, and since the threshold value when the input voltage becomes lower from the higher side and the threshold value when the input voltage becomes higher from the lower side are different, It is possible to prevent the drive capability correction circuit from repeatedly turning on and off due to a slight change in the output.
【００１７】図２（ｂ）は温度検出回路１０の他の構成
例を示したもので、電源間に抵抗８とＮ型トランジスタ
９が直列に接続されて構成され、図２（ａ）の場合と同
等の効果を得ることができる。図４（ａ）および（ｂ）
は、他の駆動能力補正回路の構成例を示したもので、こ
の構成の場合も同様の効果を得ることができる。FIG. 2B shows another configuration example of the temperature detection circuit 10, which is constructed by connecting a resistor 8 and an N-type transistor 9 in series between power supplies, and in the case of FIG. 2A. The same effect as can be obtained. 4 (a) and (b)
Shows an example of the configuration of another drive capability correction circuit, and similar effects can be obtained in this configuration as well.
【００１８】[0018]
【発明の効果】以上説明したように本発明によれば、一
つの集積回路に温度検出回路を内蔵することができ、内
蔵した温度検出回路により駆動能力補正回路を制御する
ことにより、低電圧時の低温特性の悪化を防止すること
ができる効果がある。As described above, according to the present invention, a temperature detecting circuit can be built in one integrated circuit, and the driving capability correcting circuit is controlled by the built-in temperature detecting circuit, so that a low voltage can be obtained. It is effective in preventing the deterioration of the low temperature characteristics.
【図１】本発明実施例の構成を示す回路図。FIG. 1 is a circuit diagram showing a configuration of an embodiment of the present invention.
【図２】（ａ）および（ｂ）は本発明実施例における図
１に示す温度検出回路の構成例を示す図。2A and 2B are diagrams showing a configuration example of a temperature detection circuit shown in FIG. 1 in an embodiment of the present invention.
【図３】本発明実施例における温度検出回路およびヒス
テリシス回路の特性を示す図。FIG. 3 is a diagram showing characteristics of a temperature detection circuit and a hysteresis circuit in the embodiment of the present invention.
【図４】（ａ）および（ｂ）は本発明実施例における別
の駆動能力補正回路の構成例を示す図。4A and 4B are diagrams showing a configuration example of another drive capability correction circuit in the embodiment of the present invention.
【図５】従来例におけるインバータ回路の構成を示す
図。FIG. 5 is a diagram showing a configuration of an inverter circuit in a conventional example.
【図６】（ａ）および（ｂ）は従来例における制御信号
付インバータ回路の構成を示す図。6A and 6B are diagrams showing a configuration of an inverter circuit with a control signal in a conventional example.
【図７】従来例における駆動能力補正回路の構成を示す
図。FIG. 7 is a diagram showing a configuration of a drive capacity correction circuit in a conventional example.
【図８】従来例における温度検出回路の構成を示す図。FIG. 8 is a diagram showing a configuration of a temperature detection circuit in a conventional example.
１ 第一のＰ型トランジスタ ２ 第一のＮ型トランジスタ ３ 第二のＰ型トランジスタ ４ 第二のＮ型トランジスタ ５、８ 抵抗 ６ ヒステリシス回路 ７ Ｐ型トランジスタ ９ Ｎ型トランジスタ １０ 温度検出回路 １１ 駆動能力補正回路 ＴＨ１、ＴＨ２ サーミスタ 1 First P-type Transistor 2 First N-type Transistor 3 Second P-type Transistor 4 Second N-type Transistor 5, 8 Resistor 6 Hysteresis Circuit 7 P-type Transistor 9 N-type Transistor 10 Temperature Detection Circuit 11 Driving Capability Correction circuit TH1, TH2 Thermistor
Claims (4)
駆動能力補正回路と、温度検出回路とを一つの基板上に
備え、この駆動能力補正回路は前記温度検出回路の検出
出力にしたがって温度が低いときに前記論理ゲートの駆
動電流が大きくなるように設定されたことを特徴とする
半導体集積回路。1. A drive capability correction circuit inserted in a drive current path of a logic gate and a temperature detection circuit are provided on a single substrate, and the drive capability correction circuit detects a temperature according to a detection output of the temperature detection circuit. A semiconductor integrated circuit, wherein the driving current of the logic gate is set to be large when the value is low.
テリシス回路が挿入された請求項１記載の半導体集積回
路。2. The semiconductor integrated circuit according to claim 1, wherein a hysteresis circuit is inserted in a detection output passage of the temperature detection circuit.
タと、このＭＯＳトランジスタのソースまたはドレイン
電流通路に挿入された抵抗器とを備えた請求項１または
２記載の半導体集積回路。3. The semiconductor integrated circuit according to claim 1, wherein the temperature detection circuit includes a MOS transistor and a resistor inserted in a source or drain current path of the MOS transistor.
の抵抗器の両端にドレイン電極およびソース電極が接続
されゲート電極が制御端子に接続されたＭＯＳトランジ
スタとを備えた請求項１または２記載の半導体集積回
路。4. The drive capability correction circuit includes a resistor and a MOS transistor having a drain electrode and a source electrode connected to both ends of the resistor and a gate electrode connected to a control terminal. The semiconductor integrated circuit described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30811093A JPH07161920A (en) | 1993-12-08 | 1993-12-08 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30811093A JPH07161920A (en) | 1993-12-08 | 1993-12-08 | Semiconductor integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07161920A true JPH07161920A (en) | 1995-06-23 |
Family
ID=17976996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30811093A Pending JPH07161920A (en) | 1993-12-08 | 1993-12-08 | Semiconductor integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07161920A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100404295B1 (en) * | 2001-08-02 | 2003-11-03 | (주)실리콘세븐 | Temperature sensing circuit having hysteresis generating means |
| US7499253B2 (en) | 2005-03-07 | 2009-03-03 | Rohm Co., Ltd. | Semiconductor integrated-circuit unit with temperature protective circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60227458A (en) * | 1984-04-25 | 1985-11-12 | Mitsubishi Electric Corp | Heat insulation device in semiconductor integrated circuit device |
| JPS62113460A (en) * | 1985-11-13 | 1987-05-25 | Matsushita Electric Ind Co Ltd | Heat protective circuit |
| JPS62229866A (en) * | 1985-11-29 | 1987-10-08 | Nippon Denso Co Ltd | Semiconductor device |
| JPH0525245U (en) * | 1991-03-29 | 1993-04-02 | 株式会社イトーキクレビオ | Air conditioning air blowing device |
| JPH05129598A (en) * | 1990-11-26 | 1993-05-25 | Fuji Electric Co Ltd | Power device overheat detection circuit |
-
1993
- 1993-12-08 JP JP30811093A patent/JPH07161920A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60227458A (en) * | 1984-04-25 | 1985-11-12 | Mitsubishi Electric Corp | Heat insulation device in semiconductor integrated circuit device |
| JPS62113460A (en) * | 1985-11-13 | 1987-05-25 | Matsushita Electric Ind Co Ltd | Heat protective circuit |
| JPS62229866A (en) * | 1985-11-29 | 1987-10-08 | Nippon Denso Co Ltd | Semiconductor device |
| JPH05129598A (en) * | 1990-11-26 | 1993-05-25 | Fuji Electric Co Ltd | Power device overheat detection circuit |
| JPH0525245U (en) * | 1991-03-29 | 1993-04-02 | 株式会社イトーキクレビオ | Air conditioning air blowing device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100404295B1 (en) * | 2001-08-02 | 2003-11-03 | (주)실리콘세븐 | Temperature sensing circuit having hysteresis generating means |
| US7499253B2 (en) | 2005-03-07 | 2009-03-03 | Rohm Co., Ltd. | Semiconductor integrated-circuit unit with temperature protective circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6225846B1 (en) | Body voltage controlled semiconductor integrated circuit | |
| US6310492B1 (en) | CMOS semiconductor integrated circuit | |
| US20070229041A1 (en) | Excess Current Detecting Circuit and Power Supply Device Provided with it | |
| US7310213B2 (en) | Semiconductor device provided with overheat protection circuit and electronic circuit using the same | |
| US4599554A (en) | Vertical MOSFET with current monitor utilizing common drain current mirror | |
| JPH01227520A (en) | Power semiconductor device | |
| US20020113642A1 (en) | Reference voltage circuit | |
| US20030030482A1 (en) | Semiconductor integrated circuit and reference voltage generating circuit employing it | |
| US6859040B2 (en) | Voltage detecting circuit | |
| US3946251A (en) | Pulse level correcting circuit | |
| US20010048325A1 (en) | Integrated CMOS semiconductor circuit | |
| JP2770941B2 (en) | Schmitt trigger circuit | |
| US5982225A (en) | Hot electron compensation for improved MOS transistor reliability | |
| JP2706721B2 (en) | Voltage regulator | |
| JPH07161920A (en) | Semiconductor integrated circuit | |
| JP3963597B2 (en) | Short circuit protection circuit | |
| US5604448A (en) | Output buffer circuit having low noise characteristics | |
| US6985026B2 (en) | Semiconductor integrated circuit device and cellular terminal using the same | |
| JP2651246B2 (en) | CMOS input buffer circuit | |
| JP3126540B2 (en) | MOS type semiconductor device | |
| US20020153926A1 (en) | Inverter circuit | |
| JP2001034349A (en) | Internal step-down power supply circuit | |
| JP3493956B2 (en) | Logic circuit | |
| US6064263A (en) | DTCMOS differential amplifier | |
| JP3557948B2 (en) | Voltage detection circuit |