JPH0716441Y2 - LED array - Google Patents

LED array

Info

Publication number
JPH0716441Y2
JPH0716441Y2 JP1989148282U JP14828289U JPH0716441Y2 JP H0716441 Y2 JPH0716441 Y2 JP H0716441Y2 JP 1989148282 U JP1989148282 U JP 1989148282U JP 14828289 U JP14828289 U JP 14828289U JP H0716441 Y2 JPH0716441 Y2 JP H0716441Y2
Authority
JP
Japan
Prior art keywords
electrode
substrate
led array
diffusion region
dummy electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1989148282U
Other languages
Japanese (ja)
Other versions
JPH0387243U (en
Inventor
研介 澤瀬
弘美 緒方
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP1989148282U priority Critical patent/JPH0716441Y2/en
Publication of JPH0387243U publication Critical patent/JPH0387243U/ja
Application granted granted Critical
Publication of JPH0716441Y2 publication Critical patent/JPH0716441Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Dot-Matrix Printers And Others (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)

Description

【考案の詳細な説明】 (イ)産業上の利用分野 この考案は、ホトプリンタ等に適用される発光ダイオー
ド(LED)アレイに関する。
[Detailed Description of the Invention] (a) Field of Industrial Application The present invention relates to a light emitting diode (LED) array applied to a photo printer or the like.

(ロ)従来の技術 ホトプリンタ等に使用されるLEDチップは、多数個の拡
散領域が所定のピッチをおいてライン状に配列されるLE
Dアレイが使用される。この種のLEDアレイは、第4図に
示すように、基板(N型)1の一面に電極2を形成する
とともに、基板1のN層1a上面の一部に拡散領域(P
型)1bを形成し、この拡散領域1bの表面一部を除いて基
板1の上面をチッ化膜4で覆い、さらに拡散領域3に接
触させて、アルミニウムAlで構成される電極5が設けら
れている。この電極5の他端はボンディングパッド6を
形成している。なお拡散領域1bで表示部3を形成してい
る。
(B) Prior art LED chips used in photo printers and the like have LEs in which a large number of diffusion regions are arranged in a line at a predetermined pitch.
D arrays are used. In this type of LED array, as shown in FIG. 4, an electrode 2 is formed on one surface of a substrate (N type) 1 and a diffusion region (P) is formed on a part of the upper surface of the N layer 1a of the substrate 1.
Type) 1b is formed, the upper surface of the substrate 1 except for a part of the surface of the diffusion region 1b is covered with a nitride film 4, and the diffusion region 3 is brought into contact with the electrode 5 made of aluminum Al. ing. The other end of the electrode 5 forms a bonding pad 6. The display area 3 is formed by the diffusion area 1b.

(ハ)考案が解決しようとする課題 ホトプリンタ等に使用されるLEDチップは、近年、価格
低減の要請とともにLEDチップの小型化も要求されてい
る。しかし、アレイ方向、つまりLEDの配列方向は解像
度によって決定されており、その余地がなく、小型化の
要求に応えるために、プロセス方向の幅を縮めるように
している。具体的には、上記したようにボンディングパ
ッド6を片側引き出しにするとともに、発光部3を形成
する拡散領域1bやボンディングパッド6をできるだけ、
カッティングライン、つまりチップ基板の端縁に近づけ
るようにしている。しかしながら、この方法は、チッ化
膜4のはがれが起きた場合、第5図に示すように、電極
5のボンディングパッド6と基板1のN層1aがショート
するおそれがあるという問題があった。
(C) Issues to be solved by the invention In recent years, LED chips used in photo printers and the like have been required to be smaller in size as well as to be price-reduced. However, the array direction, that is, the LED array direction is determined by the resolution, and there is no room for it, and the width in the process direction is reduced in order to meet the demand for miniaturization. Specifically, as described above, the bonding pad 6 is drawn out on one side, and the diffusion region 1b forming the light emitting portion 3 and the bonding pad 6 are as much as possible.
The cutting line, that is, the edge of the chip substrate is brought close to the cutting line. However, this method has a problem that when the peeling of the nitride film 4 occurs, the bonding pad 6 of the electrode 5 and the N layer 1a of the substrate 1 may be short-circuited as shown in FIG.

この考案は、上記問題点に着目してなされたものであっ
て、チッ化膜等の絶縁膜層のはがれを防止し、またはが
れが生じてもショートのおそれのないLEDアレイを提供
することを目的としている。
The present invention has been made in view of the above problems, and provides an LED array that prevents peeling of an insulating film layer such as a nitride film, or does not cause a short circuit even if peeling occurs. It is an object.

(ニ)課題を解決するための手段及び作用 この考案のLEDアレイは、基板と、この基板上の一面に
形成される第1の電極と、前記基板上の他面に列設され
る拡散領域と、この拡散領域を除いて前記基板の他面に
形成される絶縁膜層と、前記絶縁膜層に形成され、一端
がボンディングパッドとされ、他端が前記拡散領域に接
触する第2の電極とを備えるものにおいて、前記基板の
端縁より微小距離をおいて、前記絶縁膜層上に、前記第
2の電極とは離隔してダミー電極を設けている。
(D) Means and Actions for Solving the Problems An LED array of the present invention is a substrate, a first electrode formed on one surface of the substrate, and a diffusion region arranged on the other surface of the substrate. And an insulating film layer formed on the other surface of the substrate except the diffusion region, and a second electrode formed on the insulating film layer, one end of which serves as a bonding pad and the other end of which contacts the diffusion region. A dummy electrode is provided on the insulating film layer at a minute distance from the edge of the substrate and apart from the second electrode.

このLEDアレイでは、基板の端縁から微小距離にダミー
電極としているので、このダミー電極が保護機能を果た
し、絶縁膜層がはがれにくい。また少しはがれて、基板
のN層とダミー電極がショートしても、ダミー電極は第
2の電極と離隔して設けられているので、発光動作には
何らの影響も与えない。
In this LED array, since the dummy electrode is provided at a minute distance from the edge of the substrate, the dummy electrode fulfills a protective function and the insulating film layer is hardly peeled off. In addition, even if the N layer of the substrate and the dummy electrode are short-circuited and the dummy electrode is short-circuited, since the dummy electrode is provided apart from the second electrode, it does not affect the light emitting operation.

(ホ)実施例 以下、実施例により、この考案をさらに詳細に説明す
る。
(E) Embodiment Hereinafter, the present invention will be described in more detail with reference to embodiments.

第1図は、この考案の一実施例を示すLEDアレイの部分
平面図である。同図においてLEDアレイ10の基板11の上
面に、拡散領域11bが所定ピッチをおいて配列されてい
る。また拡散領域11bの一端に接触して電極パターン15
がチッ化膜14上に形成され、これら電極パターン15の他
端に、ボンディングパット部16が形成されている。
FIG. 1 is a partial plan view of an LED array showing an embodiment of the present invention. In the figure, diffusion regions 11b are arranged at a predetermined pitch on the upper surface of the substrate 11 of the LED array 10. Further, the electrode pattern 15 is brought into contact with one end of the diffusion region 11b.
Are formed on the nitride film 14, and bonding pad portions 16 are formed on the other ends of these electrode patterns 15.

以上の構成は、従来のLEDアレイと特に変わるところは
ない。
The above structure is not different from the conventional LED array.

この実施例LEDアレイの特徴は、基板11の端縁17から、
約5μmの微小距離の内側に、ダミー電極18を形成した
ことである。このダミー電極18は、電極パターン15の形
成時に同じマスクパターンで同時に形成される。したが
って電極材質は、例えばアルミニウムが使用される。ま
た、各ダミー電極18は、電極パターン15とは離隔して形
成されている。
The feature of this embodiment LED array is that from the edge 17 of the substrate 11,
That is, the dummy electrode 18 is formed inside the minute distance of about 5 μm. The dummy electrode 18 is simultaneously formed with the same mask pattern when the electrode pattern 15 is formed. Therefore, for example, aluminum is used as the electrode material. Further, each dummy electrode 18 is formed apart from the electrode pattern 15.

LEDチップ10毎に分割する前の一部平面図を示すと第2
図の通りであり、スクライブライン19を境界に、複数個
のLEDチップ10にカッティング分割されるが、カッティ
ング時の衝撃等に対しても、ダミー電極18による保護の
ためチッ化膜14がはがれない。また、はがれたとしても
N層にショートするのはダミー電極18であり、電極15は
ショートしないので、発光部の動作に影響を与えない
(第3図も参照)。
The second is a partial plan view of the LED chip 10 before it is divided.
As shown in the drawing, the LED chip 10 is divided into a plurality of chips with the scribe line 19 as a boundary, but the nitride film 14 does not come off due to protection by the dummy electrode 18 even against impacts during cutting. . Further, even if peeled off, it is the dummy electrode 18 that short-circuits to the N layer, and the electrode 15 does not short-circuit, so that it does not affect the operation of the light emitting portion (see also FIG. 3).

(ヘ)考案の効果 この考案によれば、基板の端縁より微小距離をおいて、
絶縁膜層上に、ダミー電極を形成するものであるから、
カッティング時等の衝撃に対してもダミー電極による補
強機能のため、チッ化膜等の絶縁層がはがれず、したが
ってLEDアレイの歩止まりが向上する。また、たとえ絶
縁膜層のはがれが若干生じて、ダミー電極がショートす
ることがあっても、ダミー電極は第2の電極とは離隔し
て形成されているので、第2の電極に電気的な影響を与
えず、LEDアレイの性能を下げるおそれはない。
(F) Effect of the device According to this device, a small distance is set from the edge of the substrate,
Since the dummy electrode is formed on the insulating film layer,
The dummy electrode reinforces the insulating layer such as a nitride film even when it is impacted during cutting, so that the yield of the LED array is improved. Even if the insulating film layer is slightly peeled off and the dummy electrode is short-circuited, the dummy electrode is formed apart from the second electrode, so that the second electrode is electrically connected. It does not affect the performance of the LED array.

【図面の簡単な説明】[Brief description of drawings]

第1図は、この考案の一実施例を示すLEDアレイの一部
平面図、第2図は、切断前のLEDアレイを示す部分平面
図、第3図は、第1図に示すLEDアレイのIII-III線で切
断した断面図、第4図は、従来のLEDアレイを示す断面
図、第5図は、従来の同LEDアレイにおける不具合を説
明するための説明図である。 11:基板、11a:N層、11b:拡散領域、12:第1の電極、14:
チッ化膜、15:第2の電極、17:端縁、18:ダミー電極。
FIG. 1 is a partial plan view of an LED array showing an embodiment of the present invention, FIG. 2 is a partial plan view of the LED array before cutting, and FIG. 3 is a plan view of the LED array shown in FIG. A cross-sectional view taken along line III-III, FIG. 4 is a cross-sectional view showing a conventional LED array, and FIG. 5 is an explanatory diagram for explaining a defect in the conventional LED array. 11: substrate, 11a: N layer, 11b: diffusion region, 12: first electrode, 14:
Nitride film, 15: second electrode, 17: edge, 18: dummy electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】基板と、この基板上の一面に形成される第
1の電極と、前記基板上の他面に列設される拡散領域
と、この拡散領域を除いて前記基板の他面に形成される
絶縁膜層と、前記絶縁膜層に形成され、一端がボンディ
ングパッドとされ、他端が前記拡散領域に接触する第2
の電極とを備えるLEDアレイにおいて、 前記基板の端縁より微小距離をおいて、前記絶縁膜層上
に、前記第2の電極とは離隔してダミー電極を形成した
ことを特徴とするLEDアレイ。
1. A substrate, a first electrode formed on one surface of the substrate, a diffusion region arranged on the other surface of the substrate, and a diffusion region on the other surface of the substrate except the diffusion region. An insulating film layer to be formed, and a second one formed on the insulating film layer, one end of which is a bonding pad and the other end of which is in contact with the diffusion region.
In the LED array, the dummy electrode is formed on the insulating film layer at a minute distance from the edge of the substrate, the dummy electrode being separated from the second electrode. .
JP1989148282U 1989-12-22 1989-12-22 LED array Expired - Lifetime JPH0716441Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989148282U JPH0716441Y2 (en) 1989-12-22 1989-12-22 LED array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989148282U JPH0716441Y2 (en) 1989-12-22 1989-12-22 LED array

Publications (2)

Publication Number Publication Date
JPH0387243U JPH0387243U (en) 1991-09-04
JPH0716441Y2 true JPH0716441Y2 (en) 1995-04-19

Family

ID=31694740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989148282U Expired - Lifetime JPH0716441Y2 (en) 1989-12-22 1989-12-22 LED array

Country Status (1)

Country Link
JP (1) JPH0716441Y2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150192281A1 (en) * 2012-07-09 2015-07-09 Sharp Kabushiki Kaisha Light emission device, and illumination device

Also Published As

Publication number Publication date
JPH0387243U (en) 1991-09-04

Similar Documents

Publication Publication Date Title
JP2960065B2 (en) Inkjet print head
US5955748A (en) End face light emitting type light emitting diode
JP3356068B2 (en) Method for manufacturing photoelectric conversion element
EP0871226B1 (en) Method of manufacturing light-receiving/emitting diode array chip
US5252182A (en) Method for manufacturing thermal recording device
KR100675460B1 (en) LED array package structure and method
US12477652B2 (en) Circuit device
US11942563B1 (en) Manufacturing method of chip package and chip package
JP3316252B2 (en) Optical print head
US5038186A (en) Light emitting diode array
JP3485788B2 (en) Light emitting diode array and optical print head
CN111834385B (en) Backside illuminated image sensor and manufacturing method thereof
JP2023172904A (en) pixel structure
JP2001232839A (en) Thermal head
US20060270070A1 (en) Electronic device, electronic device producing method, thermal head, and thermal head producing method
JP3108500B2 (en) Thermal head
JP2777442B2 (en) Light emitting diode array
TWI835553B (en) Circuit board and manufacturing method thereof
JPH05190899A (en) Semiconductor element array chip and manufacture thereof
JP2004311552A (en) Semiconductor device and method of manufacturing the same
JPH09260309A (en) Wafer scribe line structure
JPH04244862A (en) Thermal head
JPH0736754Y2 (en) Light emitting diode for optical printer
JPS62298133A (en) semiconductor substrate
JPH01206068A (en) Thermal recording head and production thereof