JPH07169383A - Impregnated cathode and electron tube or electron beam applying apparatus using same - Google Patents
Impregnated cathode and electron tube or electron beam applying apparatus using sameInfo
- Publication number
- JPH07169383A JPH07169383A JP32444893A JP32444893A JPH07169383A JP H07169383 A JPH07169383 A JP H07169383A JP 32444893 A JP32444893 A JP 32444893A JP 32444893 A JP32444893 A JP 32444893A JP H07169383 A JPH07169383 A JP H07169383A
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- cathode
- impregnated cathode
- electron
- impregnated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 22
- 239000000843 powder Substances 0.000 claims abstract description 32
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 31
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 23
- 239000011248 coating agent Substances 0.000 claims abstract description 16
- 238000000576 coating method Methods 0.000 claims abstract description 16
- 239000000126 substance Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000001513 hot isostatic pressing Methods 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 13
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 11
- 239000003870 refractory metal Substances 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052762 osmium Inorganic materials 0.000 claims description 5
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000001354 calcination Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000005245 sintering Methods 0.000 abstract description 8
- 239000010953 base metal Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 15
- 238000010849 ion bombardment Methods 0.000 description 13
- 239000008188 pellet Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002775 capsule Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 206010024769 Local reaction Diseases 0.000 description 2
- FQNGWRSKYZLJDK-UHFFFAOYSA-N [Ca].[Ba] Chemical compound [Ca].[Ba] FQNGWRSKYZLJDK-UHFFFAOYSA-N 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- -1 compound compound Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
- Solid Thermionic Cathode (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は陰極線管等の電子管、ま
た、電子ビーム蒸着機等の電子線応用装置に用いられる
含浸型カソードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron tube such as a cathode ray tube, and an impregnated cathode used in an electron beam application apparatus such as an electron beam vapor deposition machine.
【0002】[0002]
【従来の技術】テレビジョン用、ディスプレイ用陰極線
管は常に、より輝度の高い画像を、より長期間にわたり
表示することが要求されている。このためにカソードの
電流密度を上げることと同時に、寿命を伸ばすことが必
要である。この目的に対して含浸型カソードは適してい
るが、一方含浸型カソードは酸化物カソードに比べ動作
温度が200℃以上高いという大きな欠点がある。2. Description of the Prior Art Cathode ray tubes for televisions and displays are always required to display brighter images for a longer period of time. Therefore, it is necessary to increase the current density of the cathode and at the same time extend the life. Although the impregnated cathode is suitable for this purpose, the impregnated cathode has a major drawback that the operating temperature is higher than that of the oxide cathode by 200 ° C. or more.
【0003】このため含浸型カソードの動作温度を下げ
るための努力が常に行われてきた。この例をいくつか挙
げる。For this reason, efforts have always been made to reduce the operating temperature of impregnated cathodes. Here are some examples:
【0004】まず第1例として、W粉末とSc酸化物粉
末とを混合、成形し、しかる後に水素中で仮焼結、真空
中で本焼結をして作られた多孔質基体にBaO,Al2
O3,CaO等から成る電子放射物質を水素中で溶融含
浸する方法で作られた含浸型カソードがある。(特公平
5−4772号公報) また第2例として、多孔質基体にBaO,Al2 O3 ,
CaO,Sc2 O3 化合物を溶融含浸させた含浸型カソ
ードがある。First, as a first example, a W powder and a Sc oxide powder were mixed and shaped, and then BaO was added to a porous substrate made by temporary sintering in hydrogen and main sintering in vacuum. Al 2
There is an impregnated cathode made by a method of melt-impregnating an electron emitting material such as O 3 and CaO in hydrogen. (Japanese Patent Publication No. 5-4772) As a second example, BaO, Al 2 O 3 ,
There is an impregnated cathode in which a CaO, Sc 2 O 3 compound is melt-impregnated.
【0005】また第3例として、多孔質基体に電子放射
物質を含浸して成る含浸型カソードの表面に、(Ba,
Sc,O)複合化合物層を被覆した含浸型カソードがあ
る。(特開昭60−170136号公報) また第4例として、多孔質基体に電子放射物質を含浸し
て成る含浸型カソードの表面にWとSc酸化物から成る
複合化合物薄膜を被覆した含浸型カソードがある。(特
開昭61−13526号公報) これらはいずれもSc原子を基体、電子放射物質ないし
は表面に添加することにより動作温度の低下をはかるも
ので、スカンデート含浸型カソードと総称される。As a third example, the surface of an impregnated cathode formed by impregnating a porous substrate with an electron-emitting substance (Ba,
There is an impregnated cathode coated with a Sc, O) composite compound layer. (JP-A-60-170136) As a fourth example, an impregnated cathode in which the surface of an impregnated cathode formed by impregnating a porous substrate with an electron emitting substance is coated with a thin film of a compound compound containing W and Sc oxides. There is. (Japanese Patent Application Laid-Open No. 61-13526) All of these are intended to lower the operating temperature by adding Sc atoms to the substrate, the electron emitting material or the surface, and are collectively referred to as scandate-impregnated cathodes.
【0006】一方、これとは別に陰極線管と比較しては
るかに低い真空度で使われる電子ビーム蒸着機、電子ビ
ーム溶接機等電子線応用装置のカソードは、残留ガスに
よるイオン衝撃が陰極線管に比べはるかに大きいため、
イオン衝撃に強いWカソードが従来使われてきた。しか
しWカソードは動作温度が非常に高い(2500〜26
00℃)ため加熱電源に対する負荷が大きいほか、カソ
ード周辺部材が不必要に熱せられて、ガス放出、軟化変
形、変質劣化などの不具合が発生していた。このためW
カソードに代わる、イオン衝撃に強く、かつ動作温度が
低いカソードが望まれている。On the other hand, apart from this, the cathode of an electron beam application apparatus such as an electron beam vapor deposition machine and an electron beam welding machine, which is used at a much lower degree of vacuum than a cathode ray tube, has an ion impact due to residual gas on the cathode ray tube. Is much larger than
W cathodes that are resistant to ion bombardment have been used in the past. However, the W cathode has a very high operating temperature (250 to 26
Therefore, the load on the heating power source is large, and the cathode peripheral member is unnecessarily heated, causing problems such as gas release, softening deformation, and deterioration of quality. Therefore W
A cathode that is strong against ion bombardment and has a low operating temperature is desired as an alternative to the cathode.
【0007】[0007]
【発明が解決しようとする課題】しかしながら上記の従
来のスカンデート含浸型カソードには陰極線管のカソー
ドとして次の欠点があった。However, the conventional scandate-impregnated cathode described above has the following drawbacks as a cathode of a cathode ray tube.
【0008】まず第1例の、基体中にSc酸化物を混合
焼結した型のものは、カソード表面の電子放射分布が不
均一である欠点があった。この理由は多孔質基体焼結の
際に2200〜2500℃の高温に加熱されるため、S
c酸化物とWが局所的に著しく反応する結果、表面の仕
事関数分布が不均一になってしまうためである。また基
体から表面へのSc原子の補給が遅いため活性化に時間
がかかる欠点、イオン衝撃後の電子放射能力回復が遅い
という欠点もあった。First, the type of the first example, in which the Sc oxide is mixed and sintered in the substrate, has a drawback that the electron emission distribution on the cathode surface is non-uniform. The reason for this is that when the porous substrate is sintered, it is heated to a high temperature of 2200 to 2500 ° C.
This is because the work function distribution on the surface becomes non-uniform as a result of a significant local reaction between the c oxide and W. Further, there is a drawback that activation is time-consuming because Sc atoms are slowly replenished from the substrate to the surface, and that the electron emission ability after ion bombardment is slowly recovered.
【0009】次に第2例の、多孔質基体にBaO,Al
2 O3 ,CaO,Sc2 O3 化合物を溶融含浸させたも
のは、BaO,Al2 O3 ,CaO,Sc2 O3 化合物
を溶融させるのに1700〜1900℃の高温にするた
め基体と前記化合物が局部的に著しく反応し、その際の
反応生成物が局在するため、第1例の、基体中にSc酸
化物を混合焼結した型のものと同様、カソード表面の電
子放射分布が不均一である欠点があった。Next, in the second example, BaO, Al was added to the porous substrate.
The 2 O 3, CaO, Sc 2 O 3 that the compound was melted impregnated, BaO, Al 2 O 3, CaO, and substrate to a high temperature of from 1,700 to 1,900 ° C. to melt the Sc 2 O 3 compound wherein Since the compound locally reacts remarkably and the reaction product at that time is localized, the electron emission distribution on the cathode surface is similar to that of the first example in which Sc oxide is mixed and sintered in the substrate. It had the drawback of being non-uniform.
【0010】また、第3、4例のような表面に複合化合
物を被覆した型のものは被覆層の構成が複雑なため製造
が著しく、安定して特性が再現しがたく、また、当被覆
膜中のSc化合物が金属Scになりやすく、そうなると
動作温度低減効果がなくなるという欠点もあった。Further, in the case of the type in which the composite compound is coated on the surface as in the third and fourth examples, the production is remarkable due to the complicated structure of the coating layer, the characteristics are difficult to reproduce stably, and There is also a drawback that the Sc compound in the covering film is likely to become metallic Sc, and if so, the effect of reducing the operating temperature is lost.
【0011】また、上記の従来のスカンデート含浸型カ
ソードを電子線応用装置のカソードとして用いる場合、
電子線応用装置は陰極線管と比較にならない程、連続し
た強いイオン衝撃があるため陰極線管とは異なる次の欠
点があった。When the above conventional scandate-impregnated cathode is used as a cathode of an electron beam application apparatus,
The electron beam application device has the following drawbacks different from the cathode ray tube because of the continuous strong ion bombardment, which is incomparable to the cathode ray tube.
【0012】第1例の、基体中にSc酸化物を混合焼結
した型のもの及び第2例の多孔質基体にBaO,Al2
O3 ,CaO,Sc2 O3 化合物を溶融含浸させたもの
は、連続した強いイオン衝撃により電子放射能力が低下
した状態が続き、必要な電子線強度が得られない。BaO, Al 2 was added to the first example of the type in which Sc oxide was mixed and sintered in the substrate, and the porous substrate of the second example.
Those obtained by melt-impregnating O 3 , CaO, and Sc 2 O 3 compounds do not have the required electron beam intensity because the electron emission capability continues to be reduced due to continuous strong ion bombardment.
【0013】また、第3、4例のような表面に複合化合
物を被覆した型のものは、被覆層が連続した強いイオン
衝撃により短時間に破壊されてしまい、やはり必要な電
子線強度が得られなくなる。Further, in the case of the type in which the composite compound is coated on the surface as in the third and fourth examples, the coating layer is destroyed in a short time by the continuous strong ion bombardment, and the required electron beam intensity is still obtained. I will not be able to.
【0014】そこで、本発明はかかる従来の技術の問題
点に鑑みて提案されたものであり、ひとつには陰極線管
用に良好な電子放射特性を低温で、かつ再現性よく得ら
れる含浸型カソードを提供すること、さらに電子線応用
装置用に低真空でイオン衝撃の激しい環境でも良好な電
子放射特性を低温で、かつ再現性よく得られる含浸型カ
ソードを提供することを目的とする。また、この含浸型
カソードを用いた長寿命、かつ特性バラツキの少ない高
品質の電子管、電子線応用装置等を提供することを目的
とする。Therefore, the present invention has been proposed in view of the above problems of the prior art, and one of them is to provide an impregnated cathode capable of obtaining good electron emission characteristics at a low temperature and with good reproducibility for a cathode ray tube. Another object of the present invention is to provide an impregnated cathode for an electron beam application device, which can obtain good electron emission characteristics at low temperature and with good reproducibility even in an environment of low vacuum and severe ion bombardment. Another object of the present invention is to provide a high-quality electron tube, an electron beam application device, etc., which uses this impregnated cathode and has a long life and less variation in characteristics.
【0015】[0015]
【課題を解決するための手段】本発明の含浸型カソード
は、高融点金属粉と、Baの化合物を含む電子放射物質
の粉末と、希土類金属、希土類金属合金、希土類金属の
酸化物のうち1種以上からなる希土類系物質の粉末とを
混合成型したものを熱間等方加圧(Hot Isostatic Pres
sing)処理して焼結することで構成される。The impregnated cathode of the present invention is one of a refractory metal powder, a powder of an electron emitting material containing a compound of Ba, a rare earth metal, a rare earth metal alloy, and an oxide of a rare earth metal. Hot isostatic pressing of a mixture of powders of rare earth materials consisting of at least one species and molding
sing) Processed and sintered.
【0016】さらに本発明の含浸型カソードの別構成
は、高融点金属粉末と、Baの化合物を含む電子放射物
質粉末と、希土類金属、希土類金属合金および希土類金
属酸化物のうち少なくとも1種からなる希土類系物質の
粉末を混合成型したものを熱間等方加圧(Hot Isostati
c Pressing)処理して焼結一体化すると共に、白金族金
属もしくは白金族金属合金から成る被覆膜を形成して電
子放射面としたことを特徴とする。特に、Irの被覆膜
を0.05〜1.0μmとしたことを特徴とする。Further, another constitution of the impregnated cathode of the present invention comprises a refractory metal powder, an electron emitting substance powder containing a compound of Ba, and at least one kind of rare earth metal, rare earth metal alloy and rare earth metal oxide. Hot isostatic pressing of a mixture of rare earth powders
c Pressing) treatment for sintering and integration, and a coating film made of a platinum group metal or a platinum group metal alloy is formed to form an electron emission surface. In particular, it is characterized in that the Ir coating film is 0.05 to 1.0 μm.
【0017】また、前記含浸型カソードにおいて、高融
点金属がW,Mo,Ta,Re,Ir,Os,またはそ
れらの群から選ばれた混合物または合金から成ることを
特徴とする。In the impregnated cathode, the refractory metal is W, Mo, Ta, Re, Ir, Os, or a mixture or alloy selected from the group thereof.
【0018】また、Baの化合物を含む電子放射物質と
しては、CaCO3 、Al2 O3 、SrCO3 のうちの
1種以上とBaCO3 との混合物、または該混合物を予
備焼成したもの、あるいはCaO,SrO,Al2 O3
のうち1種以上とBaOとの混合物であることを特徴と
する。The electron emitting material containing a Ba compound may be a mixture of BaCO 3 with at least one of CaCO 3 , Al 2 O 3 and SrCO 3 , or a mixture of CaO and CaO. , SrO, Al 2 O 3
It is characterized in that it is a mixture of one or more of them and BaO.
【0019】また、前記含浸型カソードにおいて、希土
類金属がSc,Y,Dy,La,Ce、またはそれらの
組合せ、希土類金属合金が高融点金属と前記希土類金属
との合金、希土類金属酸化物が前記希土類金属の酸化物
であることを特徴とする。In the impregnated cathode, the rare earth metal is Sc, Y, Dy, La, Ce or a combination thereof, the rare earth metal alloy is an alloy of a refractory metal and the rare earth metal, and the rare earth metal oxide is the above. It is characterized by being an oxide of a rare earth metal.
【0020】また、前記含浸型カソードにおいて、白金
族金属がIr,Os,Ru,Rh,Pd、またはそれら
の組合せであり、また白金族金属合金が前記白金族金属
間の合金であることを特徴とする。In the impregnated cathode, the platinum group metal is Ir, Os, Ru, Rh, Pd, or a combination thereof, and the platinum group metal alloy is an alloy between the platinum group metals. And
【0021】また、前記含浸型カソードにおいて、希土
類金属酸化物がSc2 O3 であり、その添加量が0.6
wt%以上、8.2wt%以下であることを特徴とす
る。In the impregnated cathode, the rare earth metal oxide is Sc 2 O 3 , and the added amount is 0.6.
It is characterized in that it is not less than wt% and not more than 8.2 wt%.
【0022】さらに、本発明は、前記各種含浸型カソー
ドを電子管や電子線応用装置に使用したことを特徴とす
る。Furthermore, the present invention is characterized in that the various impregnated cathodes are used in an electron tube or an electron beam application device.
【0023】[0023]
【作用】高融点金属粉と、Baの化合物を含む電子放射
物質と、Sc酸化物粉末とを混合したものを熱間等方加
圧(Hot Isostatic Pressing)処理して焼結することに
より、従来2200〜2500℃必要であった焼結温
度、ないしは、1700〜1900℃必要であった溶融
含浸温度を900〜1400℃に下げることができる。
これにより、従来問題となっていたSc酸化物ないしS
c酸化物を含む化合物と高融点金属の局所的反応を避け
ることができ、動作温度低減効果に加え、カソード表面
の電子放射分布不均一が緩和され、更に低真空でイオン
衝撃の激しい環境でも電子放射能力が低下しない含浸型
カソードが得られる。By mixing a mixture of a high melting point metal powder, an electron emitting material containing a compound of Ba, and a Sc oxide powder with hot isostatic pressing (hot isostatic pressing) and sintering, The sintering temperature required from 2200 to 2500 ° C. or the melt impregnation temperature required from 1700 to 1900 ° C. can be lowered to 900 to 1400 ° C.
As a result, Sc oxide or S
It is possible to avoid the local reaction between the compound containing c-oxide and the refractory metal, and in addition to the effect of reducing the operating temperature, the non-uniformity of the electron emission distribution on the cathode surface is alleviated. An impregnated-type cathode is obtained in which the emissivity is not reduced.
【0024】また基体金属および電子放射物質の少なく
とも一方に、希土類金属、希土類金属合金および希土類
金属酸化物のうち少なくとも一つの希土類系物質を添加
すると共に、電子放射面に白金族金属もしくは白金族金
属合金から成る被覆膜を形成することにより、前記のカ
ソード表面の電子放射分布不均一が緩和される効果に加
え、電子放射面の仕事関数が更に減少するので更に動作
温度を下げる事ができる。後者の効果は前記2つの手段
(基体に対するものと電子放射面に対するもの)を各々
単独で用いた場合より大きい。また、前記2つの手段は
製造が容易なため特性の再現性が良い。At least one rare earth metal selected from the group consisting of rare earth metals, rare earth metal alloys and rare earth metal oxides is added to at least one of the base metal and the electron emitting material, and platinum group metal or platinum group metal is formed on the electron emitting surface. By forming the coating film made of an alloy, in addition to the effect of alleviating the non-uniformity of the electron emission distribution on the cathode surface, the work function of the electron emission surface is further reduced, so that the operating temperature can be further lowered. The latter effect is greater than when the above two means (one for the substrate and one for the electron emitting surface) are used alone. Further, since the two means are easy to manufacture, reproducibility of characteristics is good.
【0025】[0025]
【実施例】以下本発明の実施例を図面を参照しながら説
明する。Embodiments of the present invention will be described below with reference to the drawings.
【0026】図1は本発明の含浸型カソードの製造工程
流れ図である。FIG. 1 is a flow chart of the manufacturing process of the impregnated cathode of the present invention.
【0027】まずBaCO3 ,CaCO3 .Al2 O3
の各粉体をモル比が4:1:1になるよう計量し、分散
性が良好になるよう良く混合する。(11) 次に上記混合物を大気中で1100℃程度に加熱し、炭
酸塩を熱分解してバリウムカルシウムアルミネートを主
成分とする化合物に変換する。以後、当化合物を電子放
射物質と呼ぶ。(12) 次に上記電子放射物質とW粉末とSc2 O3 粉末とを適
切な重量比率、たとえば電子放射物質10、W100、
Sc2 O3 2(1.8wt%)の比で計量し、分散性
が良好になるよう良く混合する。(13) 次に上記混合物を適切な形状、大きさのゴム型に入れ、
約2000Kg/cm2 の冷間等方加圧(Cold Static
Pressing)処理により、粉体から成形体に変換する。
(14) 次に上記成形体をガラス製カプセルに入れ、成形体とガ
ラスカプセルとの空隙にはアルミナ粉末を詰め、内部を
10-5Torr程度の真空にしたのち密封する。(1
5) 次に上記ガラスカプセル入り成形体を図5に示す昇温昇
圧スケジュールで熱間等方加圧(Hot Isostatic Pressi
ng)処理して成形体を高温高圧で焼結する。この時の雰
囲気、温度、圧力、時間はそれぞれArガス、900〜
1400℃、1000〜2000気圧、1〜180分が
適切であるが、この実施例ではそれぞれArガス、10
00℃、1500気圧、20分とした。(16) 次に上記焼結体に切断、研削、研磨などの加工を施し、
所望の寸法、形状の含浸型カソードペレットを得る。
(17) 本発明の第1実施例の含浸型カソードはこの段階で2極
管に組み立て電子放射特性を測定した。First, BaCO 3 , CaCO 3 . Al 2 O 3
The respective powders of 1 are weighed so that the molar ratio becomes 4: 1: 1 and well mixed so that the dispersibility becomes good. (11) Next, the mixture is heated to about 1100 ° C. in the atmosphere to thermally decompose the carbonate and convert it into a compound containing barium calcium aluminate as a main component. Hereinafter, this compound is referred to as an electron emitting substance. (12) Next, the electron emitting material, W powder, and Sc 2 O 3 powder are mixed in an appropriate weight ratio, for example, electron emitting material 10, W100,
Weigh in a ratio of Sc 2 O 3 2 (1.8 wt%) and mix well to obtain good dispersibility. (13) Next, the mixture is put into a rubber mold having an appropriate shape and size,
Cold isostatic pressing of about 2000 Kg / cm 2 (Cold Static
Pressing) process converts the powder into a compact.
(14) Next, the above-mentioned molded body is put into a glass capsule, and alumina powder is filled in the space between the molded body and the glass capsule, and the inside is evacuated to about 10 -5 Torr and then sealed. (1
5) Next, the above-mentioned molded body containing glass capsules is hot isostatically pressed (Hot Isostatic Pressi) according to the heating / pressurizing schedule shown in FIG.
ng) process and sinter the compact at high temperature and high pressure. At this time, the atmosphere, temperature, pressure, and time are Ar gas, 900-
1400 ° C., 1000 to 2000 atm, and 1 to 180 minutes are suitable, but in this example, Ar gas and 10 respectively.
It was set to 00 ° C., 1500 atm, and 20 minutes. (16) Next, the sintered body is subjected to processing such as cutting, grinding and polishing,
An impregnated cathode pellet having a desired size and shape is obtained.
(17) At this stage, the impregnated cathode of Example 1 of the present invention was assembled in a diode to measure electron emission characteristics.
【0028】図2(a)に本発明の第1実施例の含浸型
カソードペレット21の断面を示す。図2(a)に示す
とおり、本発明の第1実施例の含浸型カソードペレット
は多孔質W基体22の空隙部にSc2 O3 23、電子
放射物質24が分散混合一体化されたものであり、電子
放射面は25である。FIG. 2A shows a cross section of the impregnated cathode pellet 21 of the first embodiment of the present invention. As shown in FIG. 2A, the impregnated cathode pellet of the first embodiment of the present invention is a porous W substrate 22 in which Sc 2 O 3 23 and an electron emitting substance 24 are dispersed and mixed and integrated. And the electron emission surface is 25.
【0029】本発明の第2実施例の含浸型カソードは上
記カソードペレットの電子放射面25にIrをスパッタ
リング法で被覆した(図1の18)のち2極管に組み立
て電子放射特性を測定した。Ir被覆膜の厚さは0.0
5〜1.0μmが適切だが、本実施例では0.2μmお
よび0.5μmを用いた。図2(b)に本発明の第2実
施例の含浸型カソードペレット27の断面を示す。図2
(b)に示すとおり、本発明の第2実施例の含浸型カソ
ードペレットは図2(a)に示した本発明の第1実施例
の含浸型カソードペレットの電子放射面25にIr膜2
6が被覆されたものである。In the impregnated cathode of the second embodiment of the present invention, the electron emission surface 25 of the cathode pellet was coated with Ir by the sputtering method (18 in FIG. 1), and then assembled in a dipole to measure the electron emission characteristics. The thickness of the Ir coating film is 0.0
5 to 1.0 μm is suitable, but 0.2 μm and 0.5 μm were used in this example. FIG. 2B shows a cross section of the impregnated cathode pellet 27 according to the second embodiment of the present invention. Figure 2
As shown in FIG. 2B, the impregnated cathode pellet of the second embodiment of the present invention has the Ir film 2 on the electron emission surface 25 of the impregnated cathode pellet of the first embodiment of the present invention shown in FIG. 2A.
6 is coated.
【0030】また同様に、電子放射物質とWの量はその
ままとしSc2 O3 の量を0.5wt%,0.9wt
%,3.5wt%,5.1wt%,6.7wt%,8.
3wt%とした含浸型カソードペレットを作製し、同様
にして電子放射特性を測定した。Similarly, the amounts of the electron emitting material and W are unchanged, and the amounts of Sc 2 O 3 are 0.5 wt% and 0.9 wt.
%, 3.5 wt%, 5.1 wt%, 6.7 wt%, 8.
An impregnated cathode pellet of 3 wt% was prepared and the electron emission characteristics were measured in the same manner.
【0031】本発明の第1実施例,第2実施例の含浸型
カソードの代表的な電子放射特性について図3を参照し
て説明する。Typical electron emission characteristics of the impregnated cathodes of the first and second embodiments of the present invention will be described with reference to FIG.
【0032】図3は本発明の第1実施例,第2実施例と
従来の各種含浸型カソードの高真空下での電子放射特性
を2極管特性を用いて比較したものである。図3におい
て横軸はカソード・アノード間印加電圧、縦軸はカソー
ドエミッション電流である。図3において曲線が上方か
つ左方にあるほど優れた特性である。FIG. 3 is a comparison of the electron emission characteristics under high vacuum of the first and second embodiments of the present invention and various conventional impregnated cathodes by using the dipole characteristics. In FIG. 3, the horizontal axis represents the voltage applied between the cathode and the anode, and the vertical axis represents the cathode emission current. In FIG. 3, the higher the curve is on the left side, the better the characteristic.
【0033】図3において曲線31は従来のS型含浸型
カソード,即ちバリウムカルシウムアルミネートを主成
分とする電子放射物質およびWから成る含浸型カソード
で表面にIr等の被覆膜がないものの2極管特性であ
る。曲線32は従来のM型含浸型カソード、即ち前記S
型含浸型カソードの表面にIr膜(厚さ0.2μm)を
被覆したものの2極管特性である。曲線33は従来品第
1例、即ちW粉末とSc酸化物粉末を混合、成形し、し
かる後に水素中で仮焼結、真空中で本焼結をして作られ
た多孔質基体にBaO,Al2 O3 ,CaO等から成る
電子放射物質を水素中で溶融含浸する方法で作られた含
浸型カソードの2極管特性である。曲線35は本発明第
1実施例、即ちW粉末と電子放射物質と、Sc2 O3 粉
末とを混合したものを熱間等方加圧(Hot Isostatic Pr
essing)処理して焼結する方法で作られた含浸型カソー
ドの2極管特性である。曲線34は本発明第2実施例,
即ち本発明第1実施例の含浸型カソードの電子放射面に
Ir膜(厚さ0.2μm)を被覆したものの含浸型カソ
ードの2極管特性である。なお上記2極管特性のカソー
ド温度はいずれも850℃(輝度温度)である。In FIG. 3, a curve 31 is a conventional S-type impregnated cathode, that is, an impregnated cathode composed of W and an electron-emitting substance mainly containing barium calcium aluminate and having no coating film such as Ir on the surface. It is a polar characteristic. Curve 32 is a conventional M type impregnated cathode, that is, S
This is a diode characteristic of a mold-impregnated cathode whose surface is coated with an Ir film (thickness 0.2 μm). The curve 33 is the first example of the conventional product, that is, W powder and Sc oxide powder are mixed and molded, and then the powder is pre-sintered in hydrogen and main-sintered in vacuum. It is a dipole characteristic of an impregnated cathode produced by a method of melt-impregnating an electron emitting substance composed of Al 2 O 3 , CaO and the like in hydrogen. A curve 35 is the first embodiment of the present invention, that is, a mixture of W powder, an electron emitting substance, and Sc 2 O 3 powder is hot isostatically pressed (Hot Isostatic Pr).
essing) is a characteristic of the dipole of an impregnated cathode manufactured by a method of processing and sintering. The curve 34 represents the second embodiment of the present invention,
That is, it is the dipole characteristic of the impregnated cathode in which the electron emission surface of the impregnated cathode of the first embodiment of the present invention is coated with an Ir film (thickness 0.2 μm). The cathode temperature of the above-mentioned bipolar characteristics is 850 ° C. (luminance temperature).
【0034】図3から明らかなように、各種含浸型カソ
ードの特性を比較すると特性の低いものから順に、S型
(31)、従来品第1例(33)、本発明第1実施例
(35)、M型(32)、本発明第2実施例(34)で
ある。As is apparent from FIG. 3, when the characteristics of various impregnated cathodes are compared, the S type (31), the conventional product first example (33), and the first embodiment of the present invention (35) ), M type (32), and the second embodiment (34) of the present invention.
【0035】これにより本発明第2実施例(34)の含
浸型カソードは従来品(例えばM型含浸型カソード3
2)よりも高真空下での特性が優れ、陰極線管に好適す
る。一方、本発明第1実施例(35)は陰極線管に用い
た場合はM型(32)にやや劣るように見られるが、こ
れらを電子線応用装置に用いた場合は、M型(32)は
イオン衝撃により表面の被覆膜が短時間に消失し、S型
(31)になってしまうため、真空度の低い電子ビーム
溶接機等の電子線応用装置に使用することができない。
これに対し、本発明第1実施例(35)の含浸型カソー
ドは格段にイオン衝撃に強いため、長時間にわたり使用
が可能であり、かかる用途では本発明第1実施例(3
5)はM型(32)に優っている。なお本発明第2実施
例(34)を電子線応用装置に用いた場合は、イオン衝
撃により表面被覆Ir膜が短時間に消失し、本発明第1
実施例(35)と実質的に同じものになるため、この含
浸型カソードは高真空度の陰極線管に最適である。As a result, the impregnated cathode of the second embodiment (34) of the present invention is a conventional product (for example, M type impregnated cathode 3).
It has better characteristics under high vacuum than 2) and is suitable for cathode ray tubes. On the other hand, the first embodiment (35) of the present invention seems to be slightly inferior to the M type (32) when used in a cathode ray tube, but when these are used in an electron beam application device, the M type (32) Since the coating film on the surface disappears in a short time due to ion bombardment and becomes an S type (31), it cannot be used in an electron beam application device such as an electron beam welding machine having a low degree of vacuum.
On the other hand, the impregnated cathode of the first embodiment (35) of the present invention is significantly resistant to ion bombardment, and thus can be used for a long time. In such applications, the first embodiment (3) of the present invention is used.
5) is superior to the M type (32). When the second embodiment (34) of the present invention is used in an electron beam application apparatus, the surface-coated Ir film disappears in a short time due to ion bombardment.
This impregnated cathode is most suitable for a high vacuum cathode ray tube because it becomes substantially the same as the embodiment (35).
【0036】なお本発明第1実施例(35)の含浸型カ
ソードを電子ビーム溶接機に実装し、低真空度、イオン
衝撃大の環境にて特性評価をおこなった。その結果、従
来のWカソードと同等の電子放射能力がはるかに低温
(約1000℃)で得られ、イオン衝撃に対してもWカ
ソードと同等の耐久性があることを確認した。The impregnated cathode of Example 1 (35) of the present invention was mounted on an electron beam welding machine, and characteristics were evaluated in an environment of low vacuum and high ion bombardment. As a result, it was confirmed that the electron emission ability equivalent to that of the conventional W cathode was obtained at a much lower temperature (about 1000 ° C.), and that it had the same durability against ion bombardment as the W cathode.
【0037】次に図4を参照して本発明第2実施例(3
4)におけるIr被覆膜厚と2極管特性の関係を説明す
る。Next, referring to FIG. 4, a second embodiment of the present invention (3
The relationship between the Ir coating film thickness and the dipole characteristic in 4) will be described.
【0038】図4において曲線41は表面にIrを被覆
していない含浸型カソードの2極管特性である。曲線4
2はIr膜厚0.2μmのもの、曲線43はIr膜厚
0.5μmのものの2極管特性である。各々においてカ
ソード温度は850℃(輝度温度)である。In FIG. 4, a curve 41 shows the characteristics of the dipole of the impregnated cathode whose surface is not coated with Ir. Curve 4
No. 2 shows the dipole characteristic of Ir film thickness of 0.2 μm, and curve 43 shows the dipole characteristic of Ir film thickness of 0.5 μm. In each case, the cathode temperature is 850 ° C. (brightness temperature).
【0039】図4から明らかなように、本発明の含浸型
カソードの2極管特性はIr膜厚に大きく依存し、現在
のところ0.2μm付近が最良である。As is apparent from FIG. 4, the dipole characteristics of the impregnated cathode of the present invention largely depend on the Ir film thickness, and the best value is around 0.2 μm at present.
【0040】次に本発明の含浸型カソードにおけるSc
2 O3 の添加量と電子放射特性との関連を表1を参照し
て説明する。Next, Sc in the impregnated cathode of the present invention
The relationship between the amount of 2 O 3 added and the electron emission characteristics will be described with reference to Table 1.
【0041】[0041]
【表1】 [Table 1]
【0042】表1にて記号は電子放射特性の程度を示す
ものであり、優れた順に◎>○>△>Xとした。なお、
これらの記号のうち△は従来のS型含浸型カソード(図
3、31)と同等の特性であり、XはS型含浸型カソー
ド(図3,31)より特性が低い。The symbols in Table 1 indicate the degree of electron emission characteristics, and were set in order of excellentness: ⊚>∘>Δ> X. In addition,
Among these symbols, Δ has characteristics equivalent to those of the conventional S-type impregnated cathode (FIGS. 3 and 31), and X has lower characteristics than the S-impregnated cathode (FIGS. 3 and 31).
【0043】また、従来例1、2の電子放射特性のレベ
ルは△ないし○である。Further, the levels of electron emission characteristics of Conventional Examples 1 and 2 are Δ to ◯.
【0044】表1よりSc2 O3 の添加量が増加するに
つれて電子放射特性は良好になるが、さらに添加量が増
すとかえって電子放射特性は低下し、8.3wt%以上
になるとS型含浸型カソードより特性が劣ることが分か
る。このためSc2 O3 の添加量の最適な範囲は0.6
wt%以上8.2wt%以下であり、特に1.0wt%
以上5.0wt%以下が望ましい。From Table 1, the electron emission characteristics are improved as the amount of Sc 2 O 3 added is increased, but the electron emission characteristics are deteriorated when the amount added is further increased. It can be seen that the characteristics are inferior to the type cathode. Therefore, the optimum range of the amount of added Sc 2 O 3 is 0.6.
wt% or more and 8.2 wt% or less, especially 1.0 wt%
Above 5.0 wt% is desirable.
【0045】なお上記実施例では高融点金属がWである
が、これに限らずW,Mo,Ta,Re,Ir,Osま
たはそれらの間の混合物もしくは合金でもよい。Although the refractory metal is W in the above embodiment, it is not limited to this and may be W, Mo, Ta, Re, Ir, Os, or a mixture or alloy thereof.
【0046】また、上記実施例では電子放射物質がBa
CO3 ,CaCO3 ,Al2 O3 の混合物を大気中で予
備焼成したものであるが、これに限らずCaCO3 ,A
l2O3 ,SrCO3 のうちの1種以上とBaCO3 と
の混合物を予備焼成無あるいは予備焼成して使用しても
よい。またCaO,Al2 O3 ,SrOのうち1種以上
とBaOとの混合物を使用してもよい。In the above embodiment, the electron emitting substance is Ba.
A mixture of CO 3 , CaCO 3 , and Al 2 O 3 is pre-calcined in the air, but not limited to this, CaCO 3 , A
A mixture of one or more of 1 2 O 3 and SrCO 3 and BaCO 3 may be used without preliminary calcination or after preliminary calcination. A mixture of BaO and one or more of CaO, Al 2 O 3 , and SrO may be used.
【0047】また、上記実施例では希土類系物質がSc
2 O3 であるが、これに限らずSc,Y,Dy,La,
Ceまたはそれらの組合せ、または基体金属とそれらの
合金、またはそれらの酸化物でもSc2 O3 には及ばな
いが近い効果は得られる。In the above embodiment, the rare earth material is Sc.
2 O 3 , but not limited to this, Sc, Y, Dy, La,
Ce or a combination thereof, a base metal and an alloy thereof, or an oxide thereof does not reach that of Sc 2 O 3 , but a similar effect can be obtained.
【0048】また、上記実施例では電子放射面に被覆す
る白金族金属がIrであるが、これに限らずIr,O
s,Ru,Rh,Pdまたはそれらの組合せ、またはそ
れらの間の合金であってもよい。Further, in the above embodiment, the platinum group metal coating the electron emitting surface is Ir, but not limited to this, Ir, O
It may be s, Ru, Rh, Pd or a combination thereof or an alloy therebetween.
【0049】[0049]
【発明の効果】以上説明したように、本発明の含浸型カ
ソードは、高融点金属粉と電子放射物質と希土類系物質
の粉末とを混合、しかるのちに熱間等方加圧処理により
焼結させることにより、焼結温度を低減して不要な反応
を抑制でき、特に低真空度でのイオン衝撃に強く良好か
つ安定な電子放射特性を再現よく得ることができる。As described above, in the impregnated cathode of the present invention, the refractory metal powder, the electron emitting material and the powder of the rare earth material are mixed, and then sintered by hot isostatic pressing. By doing so, it is possible to reduce the sintering temperature and suppress unnecessary reactions, and it is possible to reproducibly obtain favorable and stable electron emission characteristics that are particularly resistant to ion bombardment at a low vacuum degree.
【0050】また前記含浸型カソードに白金族金属もし
くは白金族金属合金から成る被覆膜を形成して電子放出
面とすることにより、特に高真空下で良好かつ安定な電
子放射特性を低温で再現性よく得ることができる。Further, by forming a coating film made of a platinum group metal or a platinum group metal alloy on the impregnated cathode to form an electron emission surface, good and stable electron emission characteristics can be reproduced at a low temperature especially under a high vacuum. You can get good quality.
【0051】また本発明の含浸型カソードを使用するこ
とにより、長寿命かつ高品質の電子管、電子線応用装置
が提供できる。Further, by using the impregnated cathode of the present invention, it is possible to provide a long life and high quality electron tube and electron beam application device.
【図1】 本発明の含浸型カソードの実施例の製造工程
図。FIG. 1 is a manufacturing process diagram of an embodiment of an impregnated cathode of the present invention.
【図2】 本発明の含浸型カソードの第1実施例(a)
および第2実施例(b)のペレット断面図。FIG. 2 is a first embodiment (a) of the impregnated cathode of the present invention.
And a pellet cross-sectional view of the second embodiment (b).
【図3】 本発明の含浸型カソードと従来の各種含浸型
カソードの2極管特性の比較図。FIG. 3 is a comparison diagram of the dipole characteristics of the impregnated cathode of the present invention and various conventional impregnated cathodes.
【図4】 本発明の含浸型カソードの表面Ir被覆膜厚
と2極管特性の関連を示す図。FIG. 4 is a diagram showing the relationship between the surface Ir coating film thickness of the impregnated cathode of the present invention and the characteristics of a diode.
【図5】 本発明の熱間等方加圧(Hot Isostatic Pres
sing)処理条件の一例を示すプログラム。FIG. 5: Hot Isostatic Pres of the present invention
sing) A program showing an example of processing conditions.
11 BaCO3 ,CaCO3 ,Al2 O3 混合工程 12 熱分解工程 13 電子放射物質、W粉末、Sc2 O3 粉末の混合工
程 14 冷間成形工程 15 カプセル封入工程 16 熱間等方加圧(Hot Isostatic Pressing)処理工
程 17 切断・機械加工工程 18 Ir被覆膜形成工程 21 本発明の含浸型カソード(第1実施例) 22 多孔質W基体 23 Sc2 O3 粒子 24 電子放射物質 25 電子放射面 26 Ir被覆膜 27 本発明の含浸型カソード(第2実施例)11 BaCO 3 , CaCO 3 , Al 2 O 3 Mixing Step 12 Pyrolysis Step 13 Electron Emitting Material, W Powder, Sc 2 O 3 Powder Mixing Step 14 Cold Forming Step 15 Encapsulation Step 16 Hot Isostatic Pressing ( Hot Isostatic Pressing) Treatment step 17 Cutting / machining step 18 Ir coating film forming step 21 Impregnated cathode of the present invention (first embodiment) 22 Porous W substrate 23 Sc 2 O 3 particles 24 Electron emitting material 25 Electron emission Surface 26 Ir coating film 27 Impregnated cathode of the present invention (second embodiment)
Claims (10)
子放射物質の粉末と、希土類系物質の粉末とを混合、成
型し、熱間等方加圧処理した焼結体からなり、前記希土
類系物質が希土類金属、希土類金属合金および希土類金
属の酸化物のうち1種以上からなる含浸型カソード。1. A sintered body obtained by mixing and molding a refractory metal powder, a powder of an electron emitting substance containing a Ba compound, and a powder of a rare earth-based substance, and subjecting the mixture to hot isostatic pressing. An impregnated cathode in which the rare earth material is one or more of a rare earth metal, a rare earth metal alloy, and an oxide of a rare earth metal.
子放射物質の粉末と、希土類系物質の粉末とを混合、成
型し、熱間等方加圧処理した焼結体に白金族金属もしく
は白金族金属合金からなる被覆膜を形成して電子放射面
とし、前記希土類系物質が希土類金属、希土類金属合金
および希土類金属の酸化物のうち1種以上からなる含浸
型カソード。2. A platinum group metal is added to a sintered body obtained by mixing and molding a refractory metal powder, an electron emitting substance powder containing a Ba compound, and a rare earth substance powder, and subjecting the mixture to hot isostatic pressing. Alternatively, an impregnated cathode in which a coating film made of a platinum group metal alloy is formed to serve as an electron emission surface, and the rare earth-based substance is at least one selected from a rare earth metal, a rare earth metal alloy, and an oxide of a rare earth metal.
Ir,Os、またはこれらの群から選ばれた混合物、ま
たはこれらの群から選ばれた合金からなることを特徴と
する請求項1または請求項2記載の含浸型カソード。3. The refractory metal is W, Mo, Ta, Re,
The impregnated cathode according to claim 1 or 2, which is made of Ir, Os, a mixture selected from the group, or an alloy selected from these groups.
CaCO3 、Al2 O3 、SrCO3 のうちの1種以上
とBaCO3 との混合物、または該混合物を予備焼成し
たものであることを特徴とする請求項1または請求項2
記載の含浸型カソード。4. An electron emitting material containing the compound of Ba,
3. A mixture of BaCO 3 and at least one of CaCO 3 , Al 2 O 3 and SrCO 3 , or a mixture obtained by pre-calcining the mixture.
The impregnated cathode described.
CaO,SrO,Al2 O3 のうち1種以上とBaOと
の混合物であることを特徴とする請求項1または請求項
2記載の含浸型カソード。5. An electron emitting material containing the compound of Ba,
The impregnated cathode according to claim 1 or 2, which is a mixture of one or more of CaO, SrO, and Al 2 O 3 and BaO.
Ce、またはこれらの群から選ばれた1種以上の組合せ
であり、前記希土類金属合金が希土類金属と高融点金属
との合金であることを特徴とする請求項1または請求項
2記載の含浸型カソード。6. The rare earth metal is Sc, Y, Dy, La,
3. The impregnating mold according to claim 1, wherein the rare earth metal alloy is Ce, or a combination of one or more selected from these groups, and the rare earth metal alloy is an alloy of a rare earth metal and a high melting point metal. Cathode.
って、その添加量が0.6wt%以上、8.2wt%以
下であることを特徴とする請求項1または請求項2記載
の含浸型カソード。7. The rare earth metal oxide is a Sc oxide, and the amount of addition thereof is 0.6 wt% or more and 8.2 wt% or less, according to claim 1 or 2. Impregnated cathode.
h,Pdの群から選ばれた1種以上であることを特徴と
する請求項2記載の含浸型カソード。8. The platinum group metal is Ir, Os, Ru, R
The impregnated cathode according to claim 2, which is one or more selected from the group consisting of h and Pd.
膜厚が0.05〜1.0μmであることを特徴とする請
求項2記載の含浸型カソード。9. The impregnated cathode according to claim 2, wherein the platinum group metal is Ir and the coating film thickness is 0.05 to 1.0 μm.
浸型カソードから選ばれた含浸型カソードを使用したこ
とを特徴とする電子管または電子線応用装置。10. An electron tube or electron beam application apparatus, wherein an impregnated cathode selected from the impregnated cathodes according to claim 1 is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32444893A JPH07169383A (en) | 1993-03-22 | 1993-12-22 | Impregnated cathode and electron tube or electron beam applying apparatus using same |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6165593 | 1993-03-22 | ||
| JP5-237618 | 1993-09-24 | ||
| JP23761893 | 1993-09-24 | ||
| JP5-61655 | 1993-09-24 | ||
| JP32444893A JPH07169383A (en) | 1993-03-22 | 1993-12-22 | Impregnated cathode and electron tube or electron beam applying apparatus using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07169383A true JPH07169383A (en) | 1995-07-04 |
Family
ID=27297585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32444893A Pending JPH07169383A (en) | 1993-03-22 | 1993-12-22 | Impregnated cathode and electron tube or electron beam applying apparatus using same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07169383A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461327C (en) * | 2004-12-30 | 2009-02-11 | 中国科学院电子学研究所 | A kind of preparation method of barium tungsten cathode impregnated with metal nano film |
| JP2014525991A (en) * | 2011-08-03 | 2014-10-02 | コーニンクレッカ フィリップス エヌ ヴェ | Target for barium-scandium oxide dispenser cathode |
-
1993
- 1993-12-22 JP JP32444893A patent/JPH07169383A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100461327C (en) * | 2004-12-30 | 2009-02-11 | 中国科学院电子学研究所 | A kind of preparation method of barium tungsten cathode impregnated with metal nano film |
| JP2014525991A (en) * | 2011-08-03 | 2014-10-02 | コーニンクレッカ フィリップス エヌ ヴェ | Target for barium-scandium oxide dispenser cathode |
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