JPH071775B2 - Heat pipe type heat equalizer - Google Patents
Heat pipe type heat equalizerInfo
- Publication number
- JPH071775B2 JPH071775B2 JP10416387A JP10416387A JPH071775B2 JP H071775 B2 JPH071775 B2 JP H071775B2 JP 10416387 A JP10416387 A JP 10416387A JP 10416387 A JP10416387 A JP 10416387A JP H071775 B2 JPH071775 B2 JP H071775B2
- Authority
- JP
- Japan
- Prior art keywords
- container
- heat pipe
- pipe type
- heat
- type heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はガリウム−ヒ素半導体ウェハーの検査評価工程
等に用いるヒートパイプ式均熱台に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of use] The present invention relates to a heat pipe type heat equalizing table used in an inspection and evaluation process of a gallium-arsenic semiconductor wafer.
物質の加熱においては、加熱面の温度の均一性が問題と
なることが多い。即ちある一定の面積を有する加熱面の
温度に局所的なバラツキがあった場合、それを用いて製
造される製品の品質のむらに直結することは明白であ
る。In heating a substance, the uniformity of the temperature of the heating surface often becomes a problem. That is, if there is a local variation in the temperature of the heating surface having a certain area, it is obvious that it directly leads to uneven quality of the product manufactured using it.
一般的には従来から台状金属を直接ヒータ等で加熱する
方式がとられていた。この場合表面温度がある程度ばら
つくことはいうまでもないが、従来の技術分野ではさほ
ど高精度の均一性は要求されなかった。ところが近年急
速に開発が進みつつあるガリウム−ヒ素半導体ウェハー
の検査評価工程等においては、加熱表面温度を±１℃以
内におさえる必要があり、高精度の均熱台に対する要請
が極めて大きくなった。Generally, a method of directly heating a trapezoidal metal with a heater or the like has been conventionally used. In this case, it goes without saying that the surface temperature fluctuates to some extent, but in the conventional technical field, highly precise uniformity was not required. However, in the inspection and evaluation process of gallium-arsenic semiconductor wafers, which have been rapidly developed in recent years, it is necessary to keep the heating surface temperature within ± 1 ° C., and the demand for a high-precision soaking table has become extremely large.
このような中で均熱台と加熱源とをヒートパイプで結ぶ
方式や均熱台自体をヒートパイプ化する方式が開発され
ているが、前者の場合にはヒートパイプをいかに高密度
に配置しても表面の温度を±１℃におさえることは不可
能である。また後者の場合、ヒートパイプ凝縮面の凝縮
液が滴下する以前に凝縮面上で不均一に偏在する液膜を
形成するため、温度分布にある程度のバラツキが生じる
欠点があった。Under such circumstances, a method of connecting the heat equalizing base and the heating source with a heat pipe and a method of converting the heat equalizing base itself into a heat pipe have been developed, but in the former case, how densely the heat pipes are arranged. However, it is impossible to keep the surface temperature at ± 1 ° C. In the latter case, the condensate on the condensing surface of the heat pipe forms a nonuniformly unevenly distributed liquid film on the condensing surface before dropping, so that there is a drawback that the temperature distribution has some variation.
本発明はこれに鑑み種々検討の結果、先端技術分野が要
請する高精度の温度均一性を有するヒートパイプ式均熱
台を開発したもので、台状容器内を真空引きして作動液
を封入することにより、ヒートパイプ化し、該容器の両
底面の何れか一方を作動液凝縮面として均熱を行なわせ
る台において、凝縮面の容器内側に角錐又は円錐状の突
起を面全体に稠密に設けたことを特徴とするものであ
る。As a result of various studies in view of this, the present invention has developed a heat pipe type heat equalizing table having high-precision temperature uniformity required in the advanced technical field. The table-like container is evacuated to enclose the working fluid. In this way, a heat pipe is formed, and a pyramidal or conical protrusion is densely provided on the entire surface of the container on the condensation surface inside the container on the table for performing soaking using either one of the bottom surfaces of the container as the condensation surface of the working fluid. It is characterized by that.
台状容器の均熱を行なわせる面の容器内側を作動液凝縮
面とし、その面に角錐又は円錐状の突起を面全体に稠密
に設けることにより、凝縮液は面の全体に均一に分布す
るようになる。その結果加熱面の温度分布を均一に保持
し、温度のバラツキを±１℃以内におさえることができ
る。The condensate is evenly distributed over the entire surface by making the inside of the surface of the trapezoidal container that is subjected to heat equalization the working fluid condensing surface and providing pyramidal or conical protrusions densely on the entire surface. Like As a result, the temperature distribution on the heating surface can be kept uniform, and the variation in temperature can be suppressed within ± 1 ° C.
台状容器としては台状のものであればよいが、その使用
上から角錐台又は円錐台とすることが望ましく、その両
底面の何れか一方を加熱面とし、その容器内側を作動液
凝縮面として角錐又は円錐状突起を設ける。このような
突起としては加工上四角錐又は三角錐とすることが望ま
しく、その底面の一辺の長さを２〜20mm、高さを２〜20
mmとする。これは突起の底面の長さと高さがそれぞれ2m
m未満では凝縮液が突起間を充填して凝縮面上に液膜を
形成するようになるためであり、また突起の底面の長さ
と高さがそれぞれ20mmを越える凝縮液の分布がマクロ的
な次元となって意味がなくなるためである。The trapezoidal container may be of a trapezoidal shape, but it is desirable to use a truncated pyramid or a truncated cone from the viewpoint of its use. Either one of the bottom surfaces of the container is a heating surface, and the inside of the container is a working liquid condensing surface. As a pyramid or a cone-shaped protrusion. It is desirable to form a quadrangular pyramid or a triangular pyramid as such a protrusion, and one side of the bottom surface has a length of 2 to 20 mm and a height of 2 to 20 mm.
mm. The length and height of the bottom of the protrusion are 2m each
When the length is less than m, the condensate fills the spaces between the protrusions to form a liquid film on the condensing surface. This is because it becomes a dimension and has no meaning.
凝縮面の大きさとしては20〜600cm2とすることが望まし
く、20cm2未満では均熱台としてのやくわりを果せず、6
00cm2を越えると高精度の均一化が困難となるためであ
る。作動液としては使用目的に応じて選択使用すればよ
いが、ガリウム−ヒ素半導体ウェハーの検査評価用とし
てはナフタレンを用い、容器の材質としてはステンレス
鋼を用いる。また内圧上昇により均熱を行なわせる均熱
面の歪を防止するために、容器の両底面間に支柱を設け
るとよい。It is desirable to 20～600Cm 2 as the size of the condensation surface, without fulfill the role of a soaking stage is less than 20 cm 2, 6
This is because if it exceeds 00 cm 2 , it is difficult to achieve high-precision homogenization. The working fluid may be selected and used according to the purpose of use, but naphthalene is used for inspection and evaluation of gallium-arsenic semiconductor wafers, and stainless steel is used as the material of the container. Further, in order to prevent distortion of the soaking surface for soaking by increasing the internal pressure, it is advisable to provide columns between both bottom surfaces of the container.
第１図及び第２図は本発明均熱台の一実施例を示すもの
で、図において（１）はステンレス鋼からなる高さ34m
m、一方の底面の直径130mm、他方の底面の直径82mmの円
錐台状中空容器を示し、該容器（１）の一方の直径130m
m底面を均熱面（２）、他方の直径82mmの底面を加熱源
取付面（３）とする。均熱面（２）の容器（１）の内側
には作動液凝縮及び下方への滴下をうながすために底面
の一辺が18mm、高さが5mmの四角錐状突起（４）を稠密
に設け、これにより凝縮液が面の局所にかたよったり、
あるいは外周部に液だまりを形成するのを防止する。FIG. 1 and FIG. 2 show one embodiment of the heat equalizing table of the present invention. In the figure, (1) is made of stainless steel and has a height of 34 m.
m, frustoconical hollow container having a diameter of 130 mm on one bottom surface and a diameter of 82 mm on the other bottom surface, and a diameter of 130 m on one side of the container (1)
The bottom surface with a diameter of 82 mm is the heating source mounting surface (3). Inside the container (1) of the soaking surface (2), a square pyramidal protrusion (4) with a side of 18 mm and a height of 5 mm is densely provided in order to encourage condensation of the working liquid and drip downward. As a result, the condensate is hardened locally on the surface,
Alternatively, it prevents the formation of a liquid pool on the outer peripheral portion.
均熱面（２）と加熱源取付面（３）、即ち容器の両底面
間に、均熱面（２）の内圧上昇による歪を防止する支柱
（５）を設け、加熱源取付面（３）にはヒータ取付けの
ためのボルト（６）を設ける。また中空容器（１）には
作動液注入及び真空封じ切り用管（７）を取付け、内部
を真空引きしてナフタレンを封入し、加熱源取付面
（３）にヒータを取付け、ガリウム−ヒ素半導体ウェハ
ーの均熱台を作成した。A heat source mounting surface (3) is provided between the heat equalizing surface (2) and the heating source mounting surface (3), that is, between both bottom surfaces of the container, by providing a column (5) that prevents distortion due to an increase in internal pressure of the heat equalizing surface (2). ) Is provided with a bolt (6) for mounting the heater. Further, a pipe (7) for injecting a working liquid and a vacuum sealer is attached to the hollow container (1), the interior is evacuated to enclose naphthalene, and a heater is attached to the heating source attachment surface (3) to form a gallium-arsenic semiconductor. A soaking stand for the wafer was created.
これについて均熱台の温度を200℃以上に設定し、均熱
面の温度分布を調べた。その結果均熱面の温度分布は±
１℃以内におさえることができた。尚比較のため均熱面
の容器内側に突起を形成しない同一大きさの均熱台を作
成し、同様にして均熱面の温度分布を調べた。その結果
均熱面の容器内側に突起を形成しない均熱台の温度分布
は±10℃であった。The temperature of the soaking table was set to 200 ° C or higher and the temperature distribution on the soaking surface was examined. As a result, the temperature distribution on the soaking surface is ±
It could be controlled within 1 ° C. For comparison, a soaking table of the same size without forming protrusions on the inside of the soaking surface was prepared, and the temperature distribution on the soaking surface was examined in the same manner. As a result, the temperature distribution of the soaking pedestal without forming protrusions on the inside of the soaking surface was ± 10 ° C.
このように本発明均熱台によれば、ガリウム−ヒ素半導
体ウェハーの検査評価工程等において被検査体を±１℃
という高精度の均熱が可能となり、ガリウム−ヒ素半導
体ウェハーの品質向上に大きく寄与することができる等
工業上顕著な効果を奏するものである。As described above, according to the soaking table of the present invention, the object to be inspected is ± 1 ° C. in the inspection and evaluation process of the gallium-arsenic semiconductor wafer.
That is, it is possible to achieve high-precision soaking, and to significantly contribute to the quality improvement of gallium-arsenic semiconductor wafers, which is an industrially significant effect.
第１図は本発明均熱台の一実施例を示す側断面図、第２
図は第１図のＡ−Ａ′線における断面図である。 （１）台状容器、（２）均熱面 （３）加熱源取付面、（４）四角錐状突起 （５）支柱、（６）ボルト （７）真空封じ切り管FIG. 1 is a side sectional view showing an embodiment of the heat equalizing table of the present invention, and FIG.
The drawing is a sectional view taken along the line AA 'in FIG. (1) Trapezoidal container, (2) Soaking surface (3) Heating source mounting surface, (4) Square pyramidal protrusion (5) Support, (6) Bolt (7) Vacuum sealed tube
Claims (6)
ることによりヒートパイプ化し、該容器の両底面の何れ
か一方を作動液凝縮面として均熱を行なわせる台におい
て、凝縮面の容器内側に角錐又は円錐状の突起を面全体
に稠密に設けたことを特徴とするヒートパイプ式均熱
台。1. A condensing surface of a pedestal container in which a heat pipe is formed by evacuating the inside of the pedestal container to fill the working liquid, and using either one of the bottom surfaces of the container as a working liquid condensing surface for uniform heat distribution. A heat pipe type heat equalizing table, characterized in that pyramidal or conical protrusions are densely provided on the entire surface inside the container.
を用いる特許請求の範囲第１項記載のヒートパイプ式均
熱台。2. The heat pipe type heat equalizing table according to claim 1, wherein a truncated pyramid or a truncated cone is used as the trapezoidal container.
し、その底面の一辺の長さを２〜20mm、高さを２〜20mm
とする特許請求の範囲第１項又は第２項記載のヒートパ
イプ式均熱台。3. The shape of the protrusions on the condensing surface is a quadrangular pyramid or a triangular pyramid, and one side of the bottom surface has a length of 2 to 20 mm and a height of 2 to 20 mm.
The heat pipe type heat equalizing table according to claim 1 or 2.
許請求の範囲第１項，第２項又は第３項記載のヒートパ
イプ式均熱台。4. A heat pipe type heat equalizing table according to claim 1, 2, or 3, wherein the working fluid condensing surface has an area of 20 to 600 cm 2 .
囲第１項，第２項，第３項又は第４項記載のヒートパイ
プ式均熱台。5. The heat pipe type heat equalizing table according to claim 1, 2, 3, or 4, wherein naphthalene is used as the working fluid.
歪による凝縮面の変形を防止する支持柱を設ける特許請
求の範囲第１項，第２項，第３項，第４項又は第５項記
載のヒートパイプ式均熱台。6. A support column for preventing deformation of the condensation surface due to thermal strain between the condensation surface in the container and the other bottom surface. The heat pipe type heat equalizing table according to item 4 or 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10416387A JPH071775B2 (en) | 1987-04-27 | 1987-04-27 | Heat pipe type heat equalizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10416387A JPH071775B2 (en) | 1987-04-27 | 1987-04-27 | Heat pipe type heat equalizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63269543A JPS63269543A (en) | 1988-11-07 |
| JPH071775B2 true JPH071775B2 (en) | 1995-01-11 |
Family
ID=14373386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10416387A Expired - Lifetime JPH071775B2 (en) | 1987-04-27 | 1987-04-27 | Heat pipe type heat equalizer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH071775B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0550372U (en) * | 1991-12-05 | 1993-07-02 | 株式会社アドバンテスト | Constant temperature chamber, constant temperature chamber temperature control system and heat transfer plate |
| JPH09210582A (en) * | 1995-12-01 | 1997-08-12 | Fujikura Ltd | heat pipe |
| CN116124298B (en) * | 2021-11-12 | 2026-04-14 | 北京振兴计量测试研究所 | Cooling structure and design method |
-
1987
- 1987-04-27 JP JP10416387A patent/JPH071775B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63269543A (en) | 1988-11-07 |
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