JPH071791Y2 - Semiconductor wafer removing device - Google Patents
Semiconductor wafer removing deviceInfo
- Publication number
- JPH071791Y2 JPH071791Y2 JP1988138323U JP13832388U JPH071791Y2 JP H071791 Y2 JPH071791 Y2 JP H071791Y2 JP 1988138323 U JP1988138323 U JP 1988138323U JP 13832388 U JP13832388 U JP 13832388U JP H071791 Y2 JPH071791 Y2 JP H071791Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing jig
- jig
- wax
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Description
【考案の詳細な説明】 [産業上の利用分野] 本考案は、半導体ウエハ取外装置、特に研磨用治具に接
着されたウエハを安定に取外すウエハ取外装置に関する
ものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a semiconductor wafer removing device, and more particularly to a wafer removing device for stably removing a wafer bonded to a polishing jig.
[従来の技術] ウエハを研磨する場合は平坦な治具にワックスを塗布し
その上にウエハを貼付して行うが、貼付する時は加熱プ
レート上に治具を載せワックスを溶融状態にして塗布す
る。[Prior Art] When polishing a wafer, wax is applied to a flat jig and the wafer is pasted onto it. When pasting, the jig is placed on a heating plate and the wax is applied in a molten state. To do.
この場合ワックスの溶融に必要な温度は通常40℃以上で
あればよいが、加熱プレートを短時間に昇温させるた
め、プレートの表面温度を100℃以上に設定して行う。In this case, the temperature required for melting the wax is usually 40 ° C. or higher, but in order to raise the temperature of the heating plate in a short time, the surface temperature of the plate is set to 100 ° C. or higher.
貼付したウエハを鏡面加工した後は再び治具を加熱し、
ワックスを溶融してウエハを取外し次工程に備える。After mirror-finishing the attached wafer, heat the jig again,
The wax is melted and the wafer is removed to prepare for the next step.
[考案が解決しようとする課題] 上述したように鏡面研磨されたウエハはワックスを溶融
して治具より取外されるが、この場合大気中で高温に加
熱されたウエハは冷却時に吸湿により酸化され易い状態
となる。[Problems to be Solved by the Invention] As described above, a wafer that is mirror-polished is melted with wax and removed from the jig. In this case, a wafer heated to a high temperature in the atmosphere is oxidized by moisture absorption during cooling. It will be in a state where it is easy to be affected.
ウエハ鏡面に酸化が生ずるとエッチングした場合にエッ
チングが一様とならずミクロ的に表面に微少な凹凸が形
成される。When oxidation occurs on the mirror surface of the wafer, the etching is not uniform and microscopic unevenness is formed on the surface.
MOCVD(Metal Organic CVD)やMBE(Molecular Beam Ep
itaxy)成長技術のように、高精度の表面仕上が要求さ
れる場合はウエハの酸化を極度に低減することが必要で
ウエハの取外し作業における酸化防止対策が極めて重要
となるが、従来はウエハを取外す場合は先端の鋭利な薄
手の工具を用いて治具に密着したウエハを引剥す方式が
用いられており、品質を十分保証できない嫌いがあっ
た。MOCVD (Metal Organic CVD) and MBE (Molecular Beam Ep)
When high-precision surface finishing is required as in the growth technology, it is necessary to extremely reduce the oxidation of the wafer, and it is extremely important to take measures to prevent oxidation during the wafer removal work. When removing the wafer, a method of peeling off the wafer that is in close contact with the jig by using a thin tool with a sharp tip is used, and there is a dislike that the quality cannot be sufficiently guaranteed.
本考案の目的は、接着されたウエハの取外し時に生ずる
表面酸化を防止する半導体ウエハ取外装置を提供するこ
とにある。It is an object of the present invention to provide a semiconductor wafer removing device that prevents surface oxidation that occurs when removing a bonded wafer.
[課題を解決するための手段] 本考案は、研磨用治具にワックスで接着された半導体ウ
エハを取外す半導体ウエハ取外装置において、装置全体
を密閉して内部に窒素ガス等の不活性ガスを充填する密
閉カバーと、前記ウエハが貼付された研磨用治具を収納
して自動的に搬出するローダと、該ローダにより搬出さ
れた前記研磨用治具を予熱する予熱プレートと、該予熱
プレートより送られた前記研磨用治具を加熱しつつ前記
ワックスを略溶融状態とすることにより前記ウエハを取
外し状態とする加熱プレートと、前記ウエハの取外し作
業を外気より遮断して行えるよう前記密閉カバーの側面
に設けられ作業者が手を入れて手袋の上から前記ウエハ
の取外し作業のできる操作手袋付き操作窓と、取外され
た前記ウエハを外部に取出せるよう前記密閉カバーの側
面に設けられたウエハ取出口と、前記ローダに積載され
た前記研磨用治具を降下或いは予熱プレートの方向に移
動させる昇降機及び横行機と、前記ウエハが取外された
研磨用治具を冷却する冷却プレートと、冷却された前記
研磨用治具を収納するアンローダとよりなることを特徴
とする半導体ウエハ取外装置を用い、ウエハ取外し時に
表面酸化が生じないようにして目的の達成を計ってい
る。[Means for Solving the Problems] The present invention is a semiconductor wafer removing device for removing a semiconductor wafer adhered to a polishing jig with wax, and the whole device is hermetically sealed and an inert gas such as nitrogen gas is provided inside. A sealing cover to be filled, a loader that automatically stores and carries out the polishing jig to which the wafer is attached, a preheating plate that preheats the polishing jig carried out by the loader, and a preheating plate A heating plate that removes the wafer by heating the polishing jig that has been sent to bring the wax into a substantially molten state, and a sealing cover that enables the removal operation of the wafer to be shut off from the outside air. An operation window with operation gloves, which is provided on the side surface and allows an operator to put his / her hand in and remove the wafer from the top of the glove, and the closet so that the removed wafer can be taken out. A wafer take-out port provided on a side surface of the closed cover, an elevator and a traverse machine for lowering or moving the polishing jig loaded on the loader toward the preheating plate, and a polishing jig for removing the wafer. A semiconductor wafer removing device comprising a cooling plate for cooling the tool and an unloader for storing the cooled polishing jig is used to achieve the object by preventing surface oxidation during wafer removal. Is measuring.
[作用] 本考案の半導体ウエハ取外装置ではウエハを研磨治具か
ら取外す場合、表面の酸化を防止するためウエハを不活
性ガスの雰囲気中で外部から操作して取外すようにして
いるので、ウエハを大気に晒すことなく取外すことがで
き、酸化が生じない状態でウエハを安定に取出すことが
できる。[Operation] In the semiconductor wafer removing apparatus of the present invention, when the wafer is removed from the polishing jig, the wafer is manipulated and removed from the outside in the atmosphere of the inert gas to prevent the surface from being oxidized. The wafer can be removed without exposing it to the atmosphere, and the wafer can be stably taken out without oxidation.
[実施例] 以下、本考案の一実施例について図を用いて説明する。[Embodiment] An embodiment of the present invention will be described below with reference to the drawings.
第1図は本考案の半導体ウエハ取外装置の一実施例を示
す正面図である。FIG. 1 is a front view showing an embodiment of the semiconductor wafer removing apparatus of the present invention.
同図において1は装置全体を密閉して内部に窒素ガス等
の不活性ガスを充填する密閉カバー、2はウエハが貼付
された治具を収納して自動的に搬出するローダ、3はロ
ーダ2により搬出された治具を予熱する予熱プレート、
4は予熱プレート3より送られた治具を加熱しつつウエ
ハを取外し状態とする加熱プレート、5はウエハの取外
し作業を外気より遮断して行う操作手袋付き操作窓、6
は取外されたウエハを取出すウエハ取出口、7及び8は
ローダ2に積載された治具を降下或いは予備プレート3
の方向に移動させる昇降機及び横行機、9はウエハ取外
しの終了した治具を冷却する冷却プレート、10は冷却さ
れた治具を収納するアンローダである。In the figure, 1 is a hermetic cover for hermetically sealing the entire apparatus and filling the inside with an inert gas such as nitrogen gas, 2 is a loader for accommodating and automatically unloading a jig to which a wafer is attached, 3 is a loader 2 Preheating plate to preheat the jig carried out by
Reference numeral 4 is a heating plate for heating the jig sent from the preheating plate 3 to bring the wafer into a detached state, and 5 is an operation window with operation gloves for shutting off the wafer removal operation from the outside air, 6
Is a wafer outlet for taking out the removed wafer, and 7 and 8 are for lowering the jig loaded on the loader 2 or the spare plate 3.
An elevating machine and a traversing machine for moving in the direction of, a cooling plate 9 for cooling the jig whose wafer has been removed, and an unloader 10 for storing the cooled jig.
ローダ2より昇降機7、横行機8により送り出された治
具は、予熱プレート3で設定時間予熱され、ワックスが
略溶融された状態で次の加熱プレート4に送られ、ここ
でワックスが十分に溶融されこの状態でウエハの取外し
作業が行われる。The jig sent from the loader 2 by the elevator 7 and the traverse machine 8 is preheated by the preheating plate 3 for a set time, and is sent to the next heating plate 4 in a state where the wax is substantially melted, and the wax is sufficiently melted here. In this state, the wafer removing operation is performed.
この場合装置内部は密閉カバー1により窒素ガス等が充
填されているので、ウエハの取外し作業は操作部の操作
窓5を通して、操作手袋に作業者が手を入れ手袋上より
ウエハの取り外し作業が行われるもので、外気より遮断
した状態で全ての操作が行われる。In this case, since the inside of the apparatus is filled with nitrogen gas or the like by the hermetically closed cover 1, the operator removes the wafer from above the glove by putting the operator's hand into the operation glove through the operation window 5 of the operation unit. All operations are performed in a state of being shielded from the outside air.
そして取外されたウエハは取出口6より取出される。The removed wafer is taken out from the take-out port 6.
取外し終了した治具は、冷却プレート9により冷却され
た後、アンローダ10に収納される。The jig that has been removed is cooled by the cooling plate 9 and then stored in the unloader 10.
このように本実施例ではウエハを治具より取外す場合、
窒素ガス等の不活性ガス中で行うことができるので、ウ
エハに酸化が生じない状態で安定に作業することができ
る。As described above, in this embodiment, when the wafer is removed from the jig,
Since it can be performed in an inert gas such as nitrogen gas, the wafer can be stably operated without being oxidized.
[考案の効果] 以上述べたように本考案によれば次のような効果が得ら
れる。[Effect of the Invention] As described above, according to the present invention, the following effects can be obtained.
(1)研磨治具に接着されたウエハを取外す場合、表面
酸化を生ずることなく安定に取外すことができる。(1) When the wafer bonded to the polishing jig is removed, it can be stably removed without causing surface oxidation.
(2)治具を装置内に収納後、搬出工程を自動的に行う
ことにより作業効率の向上を計ることができる。(2) The work efficiency can be improved by automatically carrying out the carry-out process after the jig is housed in the device.
第1図は本考案の半導体ウエハ取外装置の一実施例を示
す正面図である。 1:密閉カバー、2:ローダ、3:予熱プレート、4:加熱プレ
ート、5:操作窓、6:ウエハ取出口、9:冷却プレート、1
0:アンローダ。FIG. 1 is a front view showing an embodiment of the semiconductor wafer removing apparatus of the present invention. 1: Airtight cover, 2: Loader, 3: Preheating plate, 4: Heating plate, 5: Operation window, 6: Wafer outlet, 9: Cooling plate, 1
0: unloader.
Claims (1)
ウエハを取外す半導体ウエハ取外装置において、装置全
体を密閉して内部に窒素ガス等の不活性ガスを充填する
密閉カバーと、前記ウエハが貼付された研磨用治具を収
納して自動的に搬出するローダと、該ローダにより搬出
された前記研磨用治具を予熱する予熱プレートと、該予
熱プレートより送られた前記研磨用治具を加熱しつつ前
記ワックスを略溶融状態とすることにより前記ウエハを
取外し状態とする加熱プレートと、前記ウエハの取外し
作業を外気より遮断して行えるよう前記密閉カバーの側
面に設けられ作業者が手を入れて手袋の上から前記ウエ
ハの取外し作業のできる操作手袋付き操作窓と、取外さ
れた前記ウエハを外部に取出せるよう前記密閉カバーの
側面に設けられたウエハ取出口と、前記ローダに積載さ
れた前記研磨用治具を降下或いは予熱プレートの方向に
移動させる昇降機及び横行機と、前記ウエハが取外され
た研磨用治具を冷却する冷却プレートと、冷却された前
記研磨用治具を収納するアンローダとよりなることを特
徴とする半導体ウエハ取外装置。1. A semiconductor wafer removing device for removing a semiconductor wafer adhered to a polishing jig with wax, and a sealing cover for sealing the entire device and filling the interior with an inert gas such as nitrogen gas; A loader for accommodating a polishing jig attached with and automatically unloading it, a preheating plate for preheating the polishing jig carried out by the loader, and the polishing jig sent from the preheating plate A heating plate that heats the wax to a state in which the wax is substantially melted to remove the wafer, and a wafer provided on the side surface of the hermetic cover so that the wafer can be removed from the atmosphere by an operator. An operation window with operation gloves that allows the user to remove the wafer from the top of the glove, and the side surface of the hermetic cover that allows the removed wafer to be taken out. An evacuation port, an elevator and a traverse machine for lowering or moving the polishing jig loaded on the loader in the direction of a preheating plate, and a cooling plate for cooling the polishing jig from which the wafer has been removed, A semiconductor wafer removing device, comprising: an unloader that accommodates the cooled polishing jig.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988138323U JPH071791Y2 (en) | 1988-10-24 | 1988-10-24 | Semiconductor wafer removing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988138323U JPH071791Y2 (en) | 1988-10-24 | 1988-10-24 | Semiconductor wafer removing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0258331U JPH0258331U (en) | 1990-04-26 |
| JPH071791Y2 true JPH071791Y2 (en) | 1995-01-18 |
Family
ID=31400553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988138323U Expired - Lifetime JPH071791Y2 (en) | 1988-10-24 | 1988-10-24 | Semiconductor wafer removing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH071791Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201241134A (en) * | 2010-12-14 | 2012-10-16 | Sumitomo Bakelite Co | Method of processing a base material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5612735A (en) * | 1979-07-10 | 1981-02-07 | Nec Corp | Peeling of monocrystalline wafer |
| JPS56161340U (en) * | 1980-04-28 | 1981-12-01 |
-
1988
- 1988-10-24 JP JP1988138323U patent/JPH071791Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0258331U (en) | 1990-04-26 |
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