JPH071815B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH071815B2 JPH071815B2 JP27583386A JP27583386A JPH071815B2 JP H071815 B2 JPH071815 B2 JP H071815B2 JP 27583386 A JP27583386 A JP 27583386A JP 27583386 A JP27583386 A JP 27583386A JP H071815 B2 JPH071815 B2 JP H071815B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- light
- output
- light receiving
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 230000000694 effects Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 （イ） 産業上の利用分野 本発明は半導体レーザ装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a semiconductor laser device.
（ロ） 従来の技術 現在、半導体レーザチップから出力されるレーザ光のモ
ニタ方法としては特公昭58-46879号公報に開示されてい
るように半導体レーザチップの１対の共振器端面の両方
からレーザ光を出力せしめ、その一方から出力されるレ
ーザ光を受光素子で検出することにより行なっていた。(B) Conventional Technology Currently, as a method of monitoring laser light output from a semiconductor laser chip, as disclosed in Japanese Patent Publication No. 58-46879, laser is emitted from both of a pair of resonator end faces of the semiconductor laser chip. This is done by causing light to be output and detecting the laser light output from one of them with a light receiving element.
（ハ） 発明が解決しようとする問題点 然るに、斯る方法では常に両共振器端面よりレーザ光を
出力せねばならず、一方の共振器端面の反射率を略100
％として、他方の共振器端面のみからレーザ光を出力さ
せることにより、高出力のレーザ光を取出す構成とはで
きない。(C) Problems to be Solved by the Invention However, in this method, laser light must be always output from both resonator end faces, and one of the resonator end faces has a reflectance of about 100.
%, By outputting the laser light only from the other end face of the resonator, it is not possible to obtain a high-output laser light.
（ニ） 問題点を解決するための手段 本発明は斯る点に鑑みてなされたもので、その構成的特
徴は１対の共振器端面を有する半導体レーザチップ、該
チップの上記共振器端面と交叉する側面に積層された受
光素子からなることにある。(D) Means for Solving the Problems The present invention has been made in view of the above points, and its structural features are a semiconductor laser chip having a pair of resonator end faces, and the resonator end face of the chip. It is composed of light receiving elements stacked on the intersecting side surfaces.
（ホ） 作用 半導体レーザチップの共振器端面からはレーザ光が出力
されるが、その他の面からも、上記レーザ発振にほぼ比
例して自然光が放出されている。従って、上記受光素子
は上記自然光を受光する。(E) Action Laser light is output from the cavity end surface of the semiconductor laser chip, but natural light is emitted from other surfaces as well in proportion to the laser oscillation. Therefore, the light receiving element receives the natural light.
（ヘ） 実施例 第１図は本発明の第１の実施例を示し、Siからなるヒー
トシンク（１）上には第１〜第３の半導体レーザチップ
（２）〜（４）が固着されている。斯るチップ（２）〜
（４）は共に一主面の略中央に紙面垂直方向に延在する
溝が形成されたＰ型GaAs基板（５）上にＰ型Ga0.55Al
0.45Asからなる第１クラッド層（６）、ノンドープGa
0.85Al0.15Asからなる活性層（７）、ｎ型Ga0.55Al0.45
Asからなる第２クラッド層（８）及びｎ型GaAsからなる
キャップ層（９）を順次積層してなる屈折率導波型の半
導体レーザチップである。斯る各チップ（２）〜（４）
において基板（５）の他主面及びキャップ層（９）の表
面に夫々形成された第１、第２電極（10）（11）間に順
方向バイアスを印加すると夫々紙面に平行となる１対の
共振器端面より紙面垂直方向にレーザ光が出射される。
また、上記各チップ（２）〜（４）の共振器端面と直交
する右側面には第１〜第３の受光素子（12）〜（14）が
積層されている。上記各受光素子（12）〜（14）は夫
々、各チップ（２）〜（４）の右側面及び第２電極（1
1）表面の一部に積層されたSiO2、SiN、Al2O3等からな
る1000Å厚の透明絶縁膜（15）上にITO、SnO2等からな
る2000Å厚の透明電極（16）、アモルファス半導体材料
からなる受光層（17）及び2000Å厚のAl電極（18）を順
次積層してなる。尚、上記受光層（17）としては、例え
ば150〜200Å厚のＰ型a-Si層、4000〜8000Å厚のｉ型a-
Si0.5Ge0.5:H層及び300〜500Å厚のｎ型a-Si層を順次積
層したものを用いる。また、上記Al電極（18）表面には
受光層（17）への外来光の入射を防止するためのAuから
なる光学バリア（19）が積層されている。(F) Embodiments FIG. 1 shows a first embodiment of the present invention, in which first to third semiconductor laser chips (2) to (4) are fixed on a heat sink (1) made of Si. There is. Such chip (2) ~
(4) P-type Ga 0.55 Al on a P-type GaAs substrate having a groove extending in the direction perpendicular to the paper surface substantially at the center of both the main surface is formed (5)
First clad layer (6) made of 0.45 As, undoped Ga
0.85 Al 0.15 As active layer (7), n-type Ga 0.55 Al 0.45
A refractive index guided semiconductor laser chip is formed by sequentially stacking a second cladding layer (8) made of As and a cap layer (9) made of n-type GaAs. Such chips (2) to (4)
When a forward bias is applied between the first and second electrodes (10) and (11) formed on the other main surface of the substrate (5) and the surface of the cap layer (9), respectively, a pair becomes parallel to the paper surface. Laser light is emitted from the cavity end face in the direction perpendicular to the plane of the drawing.
Further, first to third light receiving elements (12) to (14) are laminated on the right side surface of each of the chips (2) to (4) which is orthogonal to the cavity end surface. The light receiving elements (12) to (14) are respectively provided on the right side surface of the chips (2) to (4) and the second electrode (1).
1) 2000 Å thick transparent electrode (16) made of ITO, SnO 2 etc. on a 1000 Å thick transparent insulating film (15) made of SiO 2 , SiN, Al 2 O 3 etc. laminated on part of the surface, amorphous A light-receiving layer (17) made of a semiconductor material and an Al electrode (18) having a thickness of 2000 Å are sequentially laminated. The light receiving layer (17) may be, for example, a P-type a-Si layer having a thickness of 150 to 200Å and an i-type a- having a thickness of 4000 to 8000Å.
A layer in which a Si 0.5 Ge 0.5 : H layer and an n-type a-Si layer having a thickness of 300 to 500 Å are sequentially laminated is used. Further, an optical barrier (19) made of Au is laminated on the surface of the Al electrode (18) to prevent external light from entering the light receiving layer (17).
第２図に例えば第１の半導体レーザチップ（２）の第
１、第２電極（10）（11）間に順方向バイアスを印加し
た際の、レーザの駆動電流と第１の半導体レーザチップ
（２）のレーザ光出力との関係及びこのレーザ光出力と
第１の受光素子（12）の出力との関係を夫々実線及び一
点鎖線で示す。尚、図中Ａ、Ｂ点は夫々半導体レーザチ
ップにしきい値電流が印加された時点を示す。尚、上記
チップ（２）の水平方向の幅は約100μｍである。FIG. 2 shows a laser drive current and a first semiconductor laser chip (for example) when a forward bias is applied between the first and second electrodes (10) and (11) of the first semiconductor laser chip (2). The relationship between 2) the laser light output and the relationship between the laser light output and the output of the first light receiving element (12) are shown by a solid line and a dashed line, respectively. Incidentally, points A and B in the figure respectively indicate the times when the threshold current is applied to the semiconductor laser chip. The width of the chip (2) in the horizontal direction is about 100 μm.
第２図より明らかな如く、第１の半導体レーザチップ
（２）にしきい値以上の電流が印加されレーザ光が出力
された後は、レーザ光出力と受光素子出力とは比例関係
となる。ゆえに、受光素子の出力に基づいてレーザ光の
出力を制御することができる。As is apparent from FIG. 2, after the current exceeding the threshold value is applied to the first semiconductor laser chip (2) and the laser light is output, the laser light output and the light receiving element output have a proportional relationship. Therefore, the output of laser light can be controlled based on the output of the light receiving element.
従って、本実施例装置では、共振器端面より出力される
レーザ光をモニタ光として使用しなくても良いので、１
対の共振器端面の一方を高反射率として、他方の共振器
端面のみからレーザ光を出力させることにより、高出力
のレーザ光を取出すことができる。Therefore, in the device of the present embodiment, it is not necessary to use the laser light output from the end face of the resonator as the monitor light.
High output laser light can be extracted by making one of the pair of resonator end surfaces have a high reflectance and outputting the laser light only from the other resonator end surface.
また、第１〜第３の半導体レーザチップ（２）〜（４）
を第１図に示す如く、近接配置した際でも例えば第２の
半導体レーザチップ（３）の左側面から放出される自然
光は第１の受光素子（12）及び光学バリア（19）の存在
により、第１の半導体レーザチップ（２）内に入射する
ことを防止できる。従って、第１の半導体レーザチップ
（２）において、第２の半導体レーザチップ（３）の側
面から放出される自然光の影響による出力変動、SN比の
低下等を防止できる。The first to third semiconductor laser chips (2) to (4)
As shown in FIG. 1, natural light emitted from, for example, the left side surface of the second semiconductor laser chip (3) even when they are arranged close to each other is due to the presence of the first light receiving element (12) and the optical barrier (19). It is possible to prevent the light from entering the first semiconductor laser chip (2). Therefore, in the first semiconductor laser chip (2), it is possible to prevent the output fluctuation, the decrease of the SN ratio, etc. due to the influence of the natural light emitted from the side surface of the second semiconductor laser chip (3).
更に、上記各受光素子（12）〜（14）は各チップ（２）
〜（４）の右側面に対してパッシベーション膜として働
くので、半導体レーザチップの長寿命化が計れる。尚、
本実施例では右側面のみに受光素子を積層したが、左側
面にも受光素子を積層することにより更にパッシベーシ
ョン効果を上げることができる。Furthermore, each of the light receiving elements (12) to (14) is composed of each chip (2).
Since it works as a passivation film on the right side surface of (4) to (4), the life of the semiconductor laser chip can be extended. still,
Although the light receiving element is laminated only on the right side surface in the present embodiment, the passivation effect can be further improved by laminating the light receiving element on the left side surface.
第３図は本発明の第２の実施例を示し、第１の実施例と
の相違は、第１の実施例ではヒートシンク（１）上にハ
イブリッドに載置した第１〜第３の半導体レーザチップ
（２）〜（４）の各々に第１〜第３の受光素子（12）〜
（14）を形成したのに対して、第２の実施例では１つの
基板（５）上に第１〜第３の半導体レーザチップ（２）
〜（４）をモノリシックに形成してなる装置の各々のチ
ップに第１〜第３の受光素子（12）〜（14）を形成した
ものである。尚、第３図中、第１図と同一箇所には同一
符号を付し説明を省略する。FIG. 3 shows a second embodiment of the present invention. The difference from the first embodiment is that in the first embodiment, the first to third semiconductor lasers mounted hybridly on the heat sink (1). Each of the chips (2) to (4) has first to third light receiving elements (12) to
Whereas (14) is formed, in the second embodiment, the first to third semiconductor laser chips (2) are formed on one substrate (5).
To (4) are monolithically formed, and first to third light receiving elements (12) to (14) are formed on each chip of the device. In FIG. 3, the same parts as those in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted.
このような第２の実施例の構成でも第１の実施例と同様
な効果が得られる。With the configuration of the second embodiment, the same effect as that of the first embodiment can be obtained.
（ト） 発明の効果 本発明によれば、半導体レーザチップの側面から放出さ
れる自然光をモニタ光として用いることができるので、
共振器端面の一方から高出力のレーザ光を出力可能であ
る。(G) Effect of the Invention According to the present invention, since natural light emitted from the side surface of the semiconductor laser chip can be used as the monitor light,
High-power laser light can be output from one of the cavity end faces.
第１図及び第３図は夫々本発明の第１、第２の実施例を
示す断面図、第２図はレーザ光出力と駆動電流及び受光
素子出力との関係を示す特性図である。 （２）〜（４）……第１〜第３半導体レーザチップ、
（12）〜（14）……第１〜第３受光素子。1 and 3 are sectional views showing the first and second embodiments of the present invention, respectively, and FIG. 2 is a characteristic diagram showing the relationship between the laser light output and the drive current and the light receiving element output. (2) to (4) ... First to third semiconductor laser chips,
(12) to (14) ... First to third light receiving elements.
Claims (1)
ップ、該チップの上記共振器端面と交叉する側面に積層
された受光素子からなることを特徴とする半導体レーザ
装置。1. A semiconductor laser device comprising a semiconductor laser chip having a pair of cavity end faces, and a light receiving element laminated on a side surface of the chip intersecting the cavity end face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27583386A JPH071815B2 (en) | 1986-11-19 | 1986-11-19 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27583386A JPH071815B2 (en) | 1986-11-19 | 1986-11-19 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63128783A JPS63128783A (en) | 1988-06-01 |
| JPH071815B2 true JPH071815B2 (en) | 1995-01-11 |
Family
ID=17561062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27583386A Expired - Fee Related JPH071815B2 (en) | 1986-11-19 | 1986-11-19 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH071815B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5076694B2 (en) * | 2007-07-12 | 2012-11-21 | 日亜化学工業株式会社 | Semiconductor laser device |
| JP5063300B2 (en) * | 2007-11-05 | 2012-10-31 | 富士フイルム株式会社 | Laser module |
-
1986
- 1986-11-19 JP JP27583386A patent/JPH071815B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63128783A (en) | 1988-06-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |