JPH0719018Y2 - Magnetic sensor - Google Patents
Magnetic sensorInfo
- Publication number
- JPH0719018Y2 JPH0719018Y2 JP1989036245U JP3624589U JPH0719018Y2 JP H0719018 Y2 JPH0719018 Y2 JP H0719018Y2 JP 1989036245 U JP1989036245 U JP 1989036245U JP 3624589 U JP3624589 U JP 3624589U JP H0719018 Y2 JPH0719018 Y2 JP H0719018Y2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- magnetic sensor
- leads
- magnetoresistive
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 65
- 239000011521 glass Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 239000000696 magnetic material Substances 0.000 claims description 4
- 230000035699 permeability Effects 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 2
- 239000002893 slag Substances 0.000 description 10
- 230000004907 flux Effects 0.000 description 5
- 229910000889 permalloy Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005294 ferromagnetic effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は磁気センサに関し、詳しくはVTR装置やFDD装置
におけるモータ速度制御手段などに使用され、磁気抵抗
効果素子をDHD（ダブル・ヒートシンク・ダイオード）
構造で組込んだ磁気センサに関する。[Detailed Description of the Invention] [Industrial field of application] The present invention relates to a magnetic sensor, and more specifically, it is used as a motor speed control means in a VTR device or an FDD device, and uses a magnetoresistive effect element as a DHD (double heat sink diode). )
The present invention relates to a magnetic sensor incorporated with a structure.
VTR装置やFDD装置におけるモータ速度制御手段に使用さ
れる磁気センサには、例えば、外部から加えられる磁界
の変化で電気抵抗値が変化する磁気抵抗効果素子（以下
MR素子と称す）を組込んだものがある。A magnetic sensor used as a motor speed control means in a VTR device or an FDD device includes, for example, a magnetoresistive effect element (hereinafter, referred to as a magnetoresistive effect element whose electric resistance value changes with a change in a magnetic field applied from the outside
There is one that incorporates the MR element).
この種、MR素子を使用した磁気センサの一例を第５図及
び第６図を参照しながら説明する。同図に示す磁気セン
サ（１）は、セラミック等の非磁性基板（２）の一側縁
表面に、磁気抵抗体の一種である、パーマロイ等の強磁
性体薄膜からなるMR素子（３）を蒸着或いはスパッタリ
ングにより被着形成すると共に、上記MR素子（３）の両
端から延びる金属製リード（４）（４）を非磁性基板
（２）上に被着形成し、更に上記MR素子（３）を含む主
要部分をエポキシ樹脂等の外装樹脂材（５）でモールド
したものである。An example of a magnetic sensor using this type of MR element will be described with reference to FIGS. 5 and 6. The magnetic sensor (1) shown in the figure has an MR element (3) made of a ferromagnetic thin film such as permalloy, which is a kind of magnetic resistance, on one side edge surface of a non-magnetic substrate (2) such as ceramic. The MR element (3) is formed by vapor deposition or sputtering, and metal leads (4) (4) extending from both ends of the MR element (3) are formed on the non-magnetic substrate (2). The main part including is molded with an exterior resin material (5) such as an epoxy resin.
上記構成からなる磁気センサ（１）を、例えばVTR装置
におけるモータ速度制御手段に使用する場合、第６図に
示すように、VTR装置内に装着され、磁気ヘッド（図示
せず）が組付けられた回転ドラム（６）の周縁に上記磁
気センサ（１）を近接配置し、上記回転ドラム（６）の
周縁に装着された磁界発生手段、例えば磁石（７）によ
る磁束Ａを磁気センサ（１）で検知する。即ち、まず磁
気センサ（１）のリード（４）（４）（第５図参照）を
介してMR素子（３）にセンス電流を流しておき、図中矢
印で示すように回転ドラム（６）を回転させると、これ
により磁気センサ（１）のMR素子（３）の前方を通過す
る磁石（７）の磁束Ａが図中鎖線で示すようにMR素子
（３）を通り、このMR素子（３）の電気抵抗値が変化
し、その変化に比例して上記MR素子（３）の両端電圧が
変化するのを読取り、回転ドラム（６）の回転数を検出
してこの磁気センサ（１）の出力信号によりモータ速度
制御する。When the magnetic sensor (1) having the above structure is used as a motor speed control means in a VTR device, for example, it is mounted in the VTR device and a magnetic head (not shown) is attached, as shown in FIG. The magnetic sensor (1) is arranged close to the periphery of the rotating drum (6), and the magnetic flux (A) generated by the magnetic field generating means, for example, the magnet (7) attached to the periphery of the rotating drum (6) is detected by the magnetic sensor (1). Detect with. That is, first, a sense current is made to flow through the MR element (3) via the leads (4), (4) (see FIG. 5) of the magnetic sensor (1), and the rotating drum (6) is indicated by the arrow in the figure. When is rotated, the magnetic flux A of the magnet (7) passing in front of the MR element (3) of the magnetic sensor (1) passes through the MR element (3) as shown by the chain line in the figure, and this MR element ( 3) The electric resistance value of the magnetic element (1) changes by reading that the voltage across the MR element (3) changes in proportion to the change, and the rotational speed of the rotating drum (6) is detected. The motor speed is controlled by the output signal of.
ところで、前述した構成からなる磁気センサ（１）で
は、被検知対象物である回転ドラム（６）の磁石（７）
の磁束Ａを検知するため、回転ドラム（６）に磁気セン
サ（１）を近接配置しなければならず、上記回転ドラム
（６）周辺での構造上、磁気センサ（１）の設置位置に
制約を受けることが多かった。By the way, in the magnetic sensor (1) having the above-mentioned configuration, the magnet (7) of the rotating drum (6), which is the object to be detected, is detected.
In order to detect the magnetic flux A of the rotating drum (6), the magnetic sensor (1) must be arranged close to the rotating drum (6). Due to the structure around the rotating drum (6), the installation position of the magnetic sensor (1) is restricted. I was often received.
また、従来の磁気センサ（１）は、非磁性基板（２）上
のMR素子（３）を外装樹脂材（５）でモールドした構造
であるため、外装樹脂材（５）が吸湿し易く耐湿性に劣
しく、MR素子（３）が湿気により劣化し易いという問題
があった。Further, since the conventional magnetic sensor (1) has a structure in which the MR element (3) on the non-magnetic substrate (2) is molded with the exterior resin material (5), the exterior resin material (5) easily absorbs moisture and is resistant to moisture. There is a problem that the MR element (3) is poor in performance and is easily deteriorated by moisture.
そこで、本考案は上記問題点に鑑みて提案されたもの
で、その目的とするところは機器への組付けが容易で、
且つ、小型化及び耐湿性の向上を図り得る磁気センサを
提供するところにある。Therefore, the present invention has been proposed in view of the above problems, and the purpose thereof is to be easily assembled to a device,
Another object of the present invention is to provide a magnetic sensor that can be downsized and have improved moisture resistance.
本考案における上記目的を達成するための技術的手段
は、非磁性基板上に磁気抵抗体薄膜を被着させたペレッ
ト状のMR素子を高透磁率の軟磁性材料からなる一対の金
属製軸状リードで挾持して磁気的結合させると共に電気
的に接続し、上記磁気抵抗効果素子およびリードの接続
部にガラススリーブを外嵌し、両リードの素子挾持端部
の外周面にガラススリーブの内周面を溶着して上記MR素
子を封止した磁気センサである。The technical means for achieving the above object in the present invention is a pellet-shaped MR element having a magnetoresistive thin film deposited on a non-magnetic substrate, and a pair of metallic shaft-shaped MR elements made of a soft magnetic material with high magnetic permeability. Hold the leads to make a magnetic coupling and make an electrical connection, fit a glass sleeve over the magnetoresistive element and the connection part of the lead, and attach the inner circumference of the glass sleeve to the outer peripheral surface of the element holding ends of both leads. It is a magnetic sensor in which the MR element is sealed by welding the surface.
本考案に係る磁気センサは、MR素子をDHD構造で組込ん
だものであるから、小型で生産製に富んだ磁気センサが
実現容易となり、而もMR素子の両端から延びる軸状リー
ドが磁気的な導出入路となり、この軸状リードを所望形
状にフォーミングしてその先端部を被検知対象物に近接
させるだけでMR素子によるセンシングが可能となる。し
たがって磁気センサ本体を被検知対象物から離隔配置で
き、設置位置を選択する自由度が上がる。また、上記MR
素子がガラススリーブ内で軸状リード間に気密的に封止
されるので、外部からの悪影響を受けにくく、耐湿性の
改善が図れる。Since the magnetic sensor according to the present invention incorporates the MR element with the DHD structure, it is easy to realize a magnetic sensor that is small and rich in production, and the axial leads extending from both ends of the MR element are magnetic. The MR element can perform sensing simply by forming the axial lead into a desired shape and bringing the tip of the axial lead close to the object to be detected. Therefore, the magnetic sensor main body can be arranged apart from the object to be detected, and the degree of freedom in selecting the installation position is increased. Also, the above MR
Since the element is hermetically sealed between the axial leads in the glass sleeve, it is less likely to be adversely affected from the outside and the moisture resistance can be improved.
本考案に係る磁気センサの一実施例を第１図乃至第４図
を参照しながら説明する。An embodiment of the magnetic sensor according to the present invention will be described with reference to FIGS.
第１図に示す磁気センサ（10）において、（11）はシリ
コンやセラミック等の非磁性基板（12）上に磁気抵抗体
の一種の、Fe−Ni合金であるパーマロイ等の強磁性体薄
膜（13）を被着させたペレット状のMR素子である。例え
ば、高抵抗のシリコンからなるウェーハ表面を酸化さ
せ、その表面にパーマロイ等の強磁性体材料を蒸着或い
はスパッタリングして所定のパターンに成膜する。この
成膜後、磁界を加えながら高湿加熱してアニール処理を
行うことにより磁束に対する抵抗変化率を大きくして感
度アップを図る。その後、上記ウェーハを各ペレットサ
イズ毎にダイシングにより分割し、そのペレット両端面
に電極（14）（14）を適宜の手段により形成してMR素子
（11）を得る。このMR素子（11）における強磁性体薄膜
（13）は、例えば第２図に示すように基板全面に成膜し
た後、第３図に示すような屈曲したパターンにフォトエ
ッチング技術を利用して仕上げる。この第３図に示す屈
曲パターンを有するMR素子（11）では、電極（14）（1
4）間の電流路（15）の部分に於いて電流の流れに対し
磁場が垂直に作用し、磁場の検出感度を高めることが出
来る。In the magnetic sensor (10) shown in FIG. 1, (11) is a ferromagnetic thin film (Fe-Ni alloy, such as Permalloy) which is a kind of magnetoresistor on a non-magnetic substrate (12) such as silicon or ceramic ( This is a pellet-shaped MR element with 13) deposited. For example, a wafer surface made of high-resistance silicon is oxidized, and a ferromagnetic material such as permalloy is deposited or sputtered on the surface to form a film in a predetermined pattern. After this film formation, an annealing process is performed by heating with high humidity while applying a magnetic field, thereby increasing the resistance change rate with respect to the magnetic flux and increasing the sensitivity. After that, the wafer is divided by dicing into pellet sizes, and electrodes (14) and (14) are formed on both end faces of the pellets by an appropriate means to obtain an MR element (11). The ferromagnetic thin film (13) in this MR element (11) is formed on the entire surface of the substrate as shown in FIG. 2, for example, and then a photo-etching technique is applied to a bent pattern as shown in FIG. Finish. In the MR element (11) having the bending pattern shown in FIG. 3, the electrodes (14) (1
In the part of the current path (15) between 4), the magnetic field acts perpendicular to the current flow, and the magnetic field detection sensitivity can be increased.
（16）（16）は上記MR素子（11）を両側方から挾持する
一対の軸状リード（以下スラグリードと称す）で、Fe−
Ni合金からなる芯線をCuでクラッドしたジュメット線の
ような高透磁率の軟磁性材料で構成される。このスラグ
リード（16）（16）は、対向する面にMR素子（11）の両
電極（14）（14）が衝合した大径のスラグ部（17）（1
7）と、このスラグ部（17）（17）に溶接固定されてス
ラグ部（17）（17）から180°反対方向に延びる小径の
リード部（18）（18）とからなり、MR素子（11）と磁気
的結合すると共に電気的に接続される。（19）はスラグ
リード（16）（16）のスラグ部（17）（17）に跨がって
外嵌されたガラススリーブで、上記スラグ（17）（17）
の外周面にガラススリーブ（19）の内周面を溶着してMR
素子（11）を封止する。(16) (16) is a pair of axial leads (hereinafter referred to as slag leads) that sandwich the MR element (11) from both sides.
It is composed of a soft magnetic material with a high magnetic permeability such as a Dumet wire in which a core wire made of a Ni alloy is clad with Cu. These slag leads (16) (16) have a large diameter slag part (17) (1) (1) where the electrodes (14) (14) of the MR element (11) abut on opposite surfaces.
7) and a small diameter lead portion (18) (18) which is fixed to the slag portion (17) (17) by welding and extends 180 ° in the opposite direction from the slag portion (17) (17). 11) Magnetically coupled to and electrically connected. Reference numeral (19) is a glass sleeve fitted over the slag portions (17) and (17) of the slag reeds (16) and (16).
Weld the inner peripheral surface of the glass sleeve (19) to the outer peripheral surface of the MR
The element (11) is sealed.
上記構成からなる磁気センサ（10）をVTR装置における
モータ速度制御手段として使用する場合、まず、第４図
に示すようにVTR装置の回転ドラム（20）の周縁近傍に
磁気センサ（10）を配置する。この場合、本考案の磁気
センサ（10）では、一方のスラグリード（16）を他方の
スラグリード（16）側へ略180°程度屈曲させて両スラ
グリード（16）（16）を同一方向に導出し、その先端部
を回転ドラム（20）の周縁に近接配置する。この時、磁
気センサ本内であるガラススリーブ（19）内のMR素子
（11）は、回転ドラム（20）の周縁近接位置から離隔し
た位置に配設することができる。尚、上記磁気センサ本
体のMR素子（11）から延びるスラグリード（16）（16）
は後述するように磁気的な導出入路となるために、上記
MR素子（11）にセンサ電流を流す手段としては、例えば
各スラグリード（16）（16）のガラススリーブ（19）の
両端位置にCu線等の引出しリード（21）（21）を接続
し、この引出しリード（21）（21）を介してMR素子（1
1）にセンス電流を流すようにすればよい。When the magnetic sensor (10) having the above structure is used as a motor speed control means in a VTR device, first, as shown in FIG. 4, the magnetic sensor (10) is arranged near the peripheral edge of the rotary drum (20) of the VTR device. To do. In this case, in the magnetic sensor (10) of the present invention, one slug lead (16) is bent to the other slug lead (16) side by about 180 ° so that both slug leads (16) (16) move in the same direction. It is led out, and its tip is arranged in proximity to the peripheral edge of the rotary drum (20). At this time, the MR element (11) in the glass sleeve (19) which is in the magnetic sensor main body can be arranged at a position separated from the peripheral edge proximity position of the rotating drum (20). The slag leads (16) (16) extending from the MR element (11) of the magnetic sensor body
Is a magnetic derivation route as described later,
As a means for supplying a sensor current to the MR element (11), for example, lead wires (21) (21) such as Cu wires are connected to both ends of the glass sleeve (19) of each slag lead (16) (16), MR element (1) via this lead-out lead (21) (21)
The sense current may be applied to 1).
この状態で図中矢印で示すように回転ドラム（20）を回
転させると、これにより磁気センサ（10）のスラグリー
ド（16）（16）の先端部前方を通過する磁石（22）の磁
束Ｂは、図中鎖線で示すようにスラグリード（16）（1
6）が高透磁率の軟磁性材料からなるため、そのスラグ
リード（16）（16）を介してMR素子（11）に効率良く導
出入され、このMR素子（11）の電気抵抗値が変化し、そ
の変化に比例して上記MR素子（11）の両端電圧が変化す
るのを読取り、回転ドラム（20）の回転数を検出してこ
の磁気センサ（10）の出力信号によりモータ速度を制御
する。In this state, when the rotary drum (20) is rotated as shown by the arrow in the figure, the magnetic flux B of the magnet (22) passing in front of the tips of the slug leads (16) (16) of the magnetic sensor (10) is thereby caused. Is the slag lead (16) (1
Since 6) is made of a soft magnetic material with high magnetic permeability, it can be efficiently led in and out of the MR element (11) through its slug leads (16) (16), and the electrical resistance value of this MR element (11) changes. Then, it is read that the voltage across the MR element (11) changes in proportion to the change, the rotation speed of the rotating drum (20) is detected, and the motor speed is controlled by the output signal of this magnetic sensor (10). To do.
尚、上記実施例では磁気抵抗体の一種である、パーマロ
イ等の強磁性体材料からなるMR素子について説明した
が、本考案はこれに限定されることなく、他の磁気抵抗
体としてInSb等の半導体材料からなるMR素子についても
適用可能であるのは勿論である。Although the MR element made of a ferromagnetic material such as permalloy, which is a kind of magnetoresistive element, has been described in the above embodiment, the present invention is not limited to this, and other magnetoresistive elements such as InSb may be used. Needless to say, the present invention is also applicable to MR elements made of semiconductor materials.
本考案によれば、MR素子をDHD構造で組込んだから、被
検知対象物に対して近接配置させる必要がなく、軸状リ
ードの先端部をその被検知対象物まで引きまわすだけで
済むので、その設置位置が任意に選定できる小型で生産
性に富んだ実用的価値大なる磁気センサを提供できる。
また、MR素子はガラススリーブ内に気密封止されるので
外部からの影響を受けにくく、耐湿性の向上を図ること
が実現容易となる。According to the present invention, since the MR element is incorporated in the DHD structure, it is not necessary to dispose the MR element close to the object to be detected, and only the tip of the axial lead is pulled around to the object to be detected. It is possible to provide a magnetic sensor that is small in size and highly productive, whose installation position can be arbitrarily selected, and which has great practical value.
Further, since the MR element is hermetically sealed in the glass sleeve, it is unlikely to be affected by the outside, and it becomes easy to improve the moisture resistance.
第１図は本考案に係る磁気センサの一実施例を示す断面
図、第２図は非磁性基板の全面にパーマロイを成膜した
状態を示す拡大平面図、第３図は第２図の基板全面の成
膜をパターン化した第１図の磁気センサにおけるMR素子
の拡大平面図、第４図は第１図の磁気センサの使用状態
を示す概略平面図である。 第５図は磁気センサの従来例を示す部分断面を含む平面
図、第６図は第５図の磁気センサの使用状態を示す概略
平面図である。 （10）…磁気センサ、（11）…磁気抵抗効果素子（MR素
子）、（12）…非磁性基板、（13）…磁気抵抗体薄膜、
（16）…リード、（19）…ガラススリーブ。FIG. 1 is a sectional view showing an embodiment of a magnetic sensor according to the present invention, FIG. 2 is an enlarged plan view showing a state in which permalloy is formed on the entire surface of a non-magnetic substrate, and FIG. 3 is a substrate of FIG. FIG. 4 is an enlarged plan view of the MR element in the magnetic sensor of FIG. 1 in which film formation on the entire surface is patterned, and FIG. 4 is a schematic plan view showing a usage state of the magnetic sensor of FIG. FIG. 5 is a plan view including a partial cross section showing a conventional example of a magnetic sensor, and FIG. 6 is a schematic plan view showing a usage state of the magnetic sensor of FIG. (10) ... Magnetic sensor, (11) ... Magnetoresistive effect element (MR element), (12) ... Non-magnetic substrate, (13) ... Magnetoresistive thin film,
(16) ... Lead, (19) ... Glass sleeve.
Claims (1)
たペレット状の磁気抵抗効果素子を高透磁率の軟磁性材
料からなる一対の金属製軸状リードで挾持して磁気的結
合させると共に電気的に接続し、上記磁気抵抗効果素子
およびリードの接続部にガラススリーブを外嵌し、両リ
ードの素子挾持端部の外周面にガラススリーブの内周面
を溶着して上記磁気抵抗効果素子を封止したことを特徴
とする磁気センサ。1. A pellet-shaped magnetoresistive element in which a magnetoresistive thin film is adhered on a non-magnetic substrate is sandwiched by a pair of metal axial leads made of a soft magnetic material having high magnetic permeability to be magnetically coupled. And electrically connect, and a glass sleeve is externally fitted to the connecting portion of the magnetoresistive effect element and the lead, and the inner peripheral surface of the glass sleeve is welded to the outer peripheral surfaces of the element holding ends of both the leads to produce the magnetic resistance. A magnetic sensor having an effect element sealed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989036245U JPH0719018Y2 (en) | 1989-03-28 | 1989-03-28 | Magnetic sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989036245U JPH0719018Y2 (en) | 1989-03-28 | 1989-03-28 | Magnetic sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02128579U JPH02128579U (en) | 1990-10-23 |
| JPH0719018Y2 true JPH0719018Y2 (en) | 1995-05-01 |
Family
ID=31542312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989036245U Expired - Lifetime JPH0719018Y2 (en) | 1989-03-28 | 1989-03-28 | Magnetic sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719018Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004060298A1 (en) * | 2004-12-15 | 2006-06-22 | Robert Bosch Gmbh | Magnetic sensor array has one magnetic field sensor element whose electrical characteristics changes as function of magnetic field of working magnet and which is raised on flux controlling lead frame |
-
1989
- 1989-03-28 JP JP1989036245U patent/JPH0719018Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02128579U (en) | 1990-10-23 |
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