JPH07192565A - Contact material and manufacturing method thereof - Google Patents
Contact material and manufacturing method thereofInfo
- Publication number
- JPH07192565A JPH07192565A JP5327887A JP32788793A JPH07192565A JP H07192565 A JPH07192565 A JP H07192565A JP 5327887 A JP5327887 A JP 5327887A JP 32788793 A JP32788793 A JP 32788793A JP H07192565 A JPH07192565 A JP H07192565A
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- component
- temperature
- sintered body
- contact material
- melting point
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Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は接点材料およびその製造
方法に関し、さらに詳しくは導電性および硬度が良好で
特に真空接点材料に好適な接点材料およびその製造方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact material and a method for producing the same, and more particularly to a contact material having good conductivity and hardness, which is suitable for a vacuum contact material, and a method for producing the same.
【0002】[0002]
【従来の技術】従来、接点材料を製造する方法として
は、まずCrやWの単体または炭化物からなる耐弧成分
で焼結体を作製し、これにCuまたはAgからなる高導
電成分を接触させた状態(以下、ワークと称する)のま
まで高導電成分の融点以上の温度まで加熱することによ
り、高導電成分を焼結体となっている耐弧成分に溶浸さ
せて接点材料とする、いわゆる溶浸法が用いられてい
る。2. Description of the Related Art Conventionally, as a method for producing a contact material, a sintered body is first made of an arc-resistant component made of Cr or W alone or a carbide, and a highly conductive component made of Cu or Ag is brought into contact with the sintered body. In the state (hereinafter, referred to as a work), the high conductivity component is heated to a temperature equal to or higher than the melting point to infiltrate the arc resistant component, which is a sintered body, into a contact material, The so-called infiltration method is used.
【0003】ワークには吸着ガス、水などの不純物が多
く含まれているため、これを除去することが必要である
が、従来これらの不純物を除去するためにはワークの昇
温速度をできるだけ遅くし、かつ昇温時間を長くするこ
とが有効とされていた。Since the work contains a large amount of impurities such as adsorbed gas and water, it is necessary to remove these impurities. Conventionally, in order to remove these impurities, the temperature rising rate of the work is made as slow as possible. However, it has been considered effective to increase the temperature raising time.
【0004】一方、高導電成分を耐弧成分に溶浸させた
後冷却する際には、凝固する際に不均一を生じないよう
にゆっくり常温まで冷却するほうが良いとされていた。
しかしながらワークを炉中に投入し、加熱によりワーク
を昇温させる場合、せいぜい昇温速度は5℃/min程
度である。この時ワーク中に存在する吸着ガス、水分な
どの不純物がほぼ400℃までに発生してワーク外へ放
出されるが、400℃以上の温度でもせいぜい5℃/m
in程度の昇温速度でしか昇温させられないので、Wや
Cuなどの成分が溶浸させる前に酸化されてしまい、溶
浸処理に不具合を起こしたり、またワークの特性の劣化
をも引き起こしていた。そしてこのような形態となった
酸素や水はワークからの除去が極めて困難となる。この
ようなワークに残存する不純物の総量は200〜300
ppmにも達していた。On the other hand, when cooling the arc-resistant component after infiltrating the high-conductivity component, it has been said that it is better to cool slowly to room temperature so as to prevent nonuniformity during solidification.
However, when the work is put into the furnace and the temperature of the work is raised by heating, the heating rate is at most about 5 ° C./min. At this time, impurities such as adsorbed gas and moisture existing in the work are generated up to about 400 ° C and released to the outside of the work.
Since the temperature can be raised only at a heating rate of about in, components such as W and Cu are oxidized before being infiltrated, which causes problems in the infiltration process and also deteriorates the characteristics of the work. Was there. Oxygen and water in such a form are extremely difficult to remove from the work. The total amount of impurities remaining in such a work is 200 to 300.
It was as high as ppm.
【0005】またワークの冷却速度を速くすると高導電
成分が凝固する際に不均一な組織を形成してしまうが、
常温まで徐冷することは製造に時間がかかるのみなら
ず、冷却時にも上記した昇温時と同様に、WやCuなど
の成分が酸化されてしまい、ワークの特性の劣化を引き
起こすこともあった。Further, if the cooling rate of the work is increased, a non-uniform structure is formed when the highly conductive component is solidified.
Slow cooling to room temperature not only takes time to manufacture, but also during cooling, components such as W and Cu may be oxidized during cooling, which may cause deterioration of work characteristics. It was
【0006】[0006]
【発明が解決しようとする課題】本発明は上述したよう
な従来の問題点を鑑み、WやCuなどの成分が昇温や冷
却の工程でほとんど酸化されることがなく、導電率およ
び硬度が良好で遮断特性に優れるので、特に真空バルブ
や気中バルブの電気接点材料として好適な接点材料およ
びその製造方法の提供を目的とする。In view of the above-mentioned conventional problems, the present invention is such that the components such as W and Cu are hardly oxidized in the steps of temperature rising and cooling, and the conductivity and hardness are improved. It is an object of the present invention to provide a contact material suitable as an electric contact material for a vacuum valve or an air valve, and a method for manufacturing the same, because it is excellent and has excellent breaking characteristics.
【0007】[0007]
【課題を解決するための手段】本願第1の発明の接点材
料は、Cuおよび/またはAgからなる第1の成分を1
0〜90重量%、残部Cr,W,Mo,Ti,Ta,N
b,Zr,Co,Niの単体および/または炭化物から
なる群から選ばれた少なくとも1種以上からなる第2の
成分よりなり、かつ含有する不純物の総量が150pp
m以下であることを特徴とする。The contact material according to the first aspect of the present invention comprises a first component containing Cu and / or Ag.
0 to 90% by weight, balance Cr, W, Mo, Ti, Ta, N
b, Zr, Co, Ni as a simple substance and / or a second component consisting of at least one selected from the group consisting of carbides, and the total amount of impurities contained is 150 pp
It is characterized by being m or less.
【0008】ここでCu,Agは高導電成分であり、接
点材料の電気導電性に寄与する成分である。またCr,
W,Mo,Ti,Ta,Nb,Zr,Co,Niは耐弧
成分であり、接点材料の強度および消耗性に寄与する成
分である。Here, Cu and Ag are highly conductive components and contribute to the electrical conductivity of the contact material. Also, Cr,
W, Mo, Ti, Ta, Nb, Zr, Co, and Ni are arc-resistant components that contribute to the strength and wear of the contact material.
【0009】ここで高導電成分であるCu,Agは10
重量%未満であれば接点の導電性を低下させるため好ま
しくない。また90重量%を超える量であれば接点の耐
消耗性および耐溶着性を低下させるため好ましくない。
なお成分は、適用する回路に応じて最適な含有量のもの
を使用する。Here, the high conductivity components Cu and Ag are 10
If it is less than wt%, the conductivity of the contact is lowered, which is not preferable. On the other hand, if the amount exceeds 90% by weight, the wear resistance and welding resistance of the contacts are reduced, which is not preferable.
It should be noted that the components to be used have the optimum content according to the applied circuit.
【0010】また耐弧成分であるCr,W,Mo,T
i,Ta,Nb,Zr,Co,Niは単体または炭化物
を用いる。これは高融点元素であり、かつ耐消耗が良好
であるからである。耐弧成分は10重量%未満であれば
接点の強度が低下してしまうため好ましくない。また9
0重量%を超える量であれば接触抵抗が高くなるため好
ましくない。Also, the arc-resistant components Cr, W, Mo, T
As i, Ta, Nb, Zr, Co, and Ni, simple substances or carbides are used. This is because it is a high melting point element and has good wear resistance. If the arc resistance component is less than 10% by weight, the strength of the contact is lowered, which is not preferable. Again 9
If the amount exceeds 0% by weight, the contact resistance becomes high, which is not preferable.
【0011】ここで第1の成分を30〜80重量%とす
ることが好ましい。この範囲であれば接点の導電性、耐
消耗性および耐溶着性が十分であり、特に真空バルブの
電気接点材料として好適である。Here, the first component is preferably 30 to 80% by weight. Within this range, the contact has sufficient conductivity, wear resistance and welding resistance, and is particularly suitable as an electrical contact material for a vacuum valve.
【0012】含有する不純物としては主として酸素、窒
素、水などがある。これらの総量が150ppmを超え
る量であれば特に真空バルブにおいては耐圧を下げてし
まうので好ましくない。なお好ましい範囲としては10
0ppm以下である。The impurities contained are mainly oxygen, nitrogen and water. If the total amount of these exceeds 150 ppm, the withstand pressure is lowered particularly in a vacuum valve, which is not preferable. A preferable range is 10
It is 0 ppm or less.
【0013】本願第2の発明の接点材料は、Cuおよび
/またはAgからなる第1の成分を10〜90重量%、
残部Cr,W,Mo,Ti,Ta,Nb,Zr,Co,
Niの単体および/または炭化物からなる群から選ばれ
た少なくとも1種以上からなる第2の成分よりなり、か
つ不純物として酸素100ppm以下、水素20ppm
以下および窒素30ppm以下含有することを特徴とす
る。The contact material of the second invention of the present application comprises 10 to 90% by weight of the first component composed of Cu and / or Ag.
The balance Cr, W, Mo, Ti, Ta, Nb, Zr, Co,
Consists of a second component of at least one selected from the group consisting of simple substance of Ni and / or carbide, and oxygen as an impurity of 100 ppm or less and hydrogen of 20 ppm
It is characterized by containing less than or equal to 30ppm of nitrogen.
【0014】ここでCu,AgおよびCr,W,Mo,
Ti,Ta,Nb,Zr,Co,Niについては、上記
した本願第1の発明の接点材料と同様である。また含有
する不純物としては酸素100ppm以下、水素20p
pm以下および窒素30ppm以下である。これらのガ
ス成分は、真空バルブ内で接点の開閉を行った際、高温
になった接点材から発生し、再点弧現象の発生につなが
る。酸素,水素および窒素がそれぞれこの数値以下であ
れば、この影響は少ない。なお酸素70ppm以下、水
素10ppm以下および窒素20ppm以下であれば再
点弧現象の発生はほとんど発生せず、より好ましい。Here, Cu, Ag and Cr, W, Mo,
Ti, Ta, Nb, Zr, Co and Ni are the same as the contact material of the first invention of the present application. The impurities contained are oxygen 100 ppm or less and hydrogen 20 p.
It is pm or less and nitrogen is 30 ppm or less. These gas components are generated from the contact material that has become high temperature when the contacts are opened and closed in the vacuum valve, which leads to the occurrence of the re-ignition phenomenon. If oxygen, hydrogen and nitrogen are below this value, respectively, this effect is small. If the oxygen content is 70 ppm or less, the hydrogen content is 10 ppm or less, and the nitrogen content is 20 ppm or less, the re-ignition phenomenon hardly occurs, which is more preferable.
【0015】本願第3の発明の接点材料の製造方法は、
Cuおよび/またはAgからなる第1の成分をCr,
W,Mo,Ti,Ta,Nb,Zr,Co,Niの単体
および/または炭化物からなる群から選ばれた少なくと
も1種以上からなる第2の成分よりなる焼結体と接触さ
せ、これを400℃以上,前記第1の成分の融点未満の
所定の温度まで急加熱する第1の工程と、前記所定の温
度で所定時間保持した後、前記第1の成分の融点以上の
温度に昇温する第2の工程と、前記第1の成分が前記第
2の成分よりなる焼結体に溶浸するまで前記第1の成分
の融点以上の温度を保持し、その後前記第1の成分の融
点よりも100℃以上低い温度まで徐冷する第3の工程
とからなることを特徴とする。The method of manufacturing a contact material according to the third aspect of the present invention is
The first component consisting of Cu and / or Ag is Cr,
W, Mo, Ti, Ta, Nb, Zr, Co, Ni simple substance and / or contact with a sintered body composed of a second component of at least one selected from the group consisting of carbides, and this is contacted with 400 A first step of rapidly heating to a predetermined temperature of not less than 0 ° C. and lower than the melting point of the first component, and holding at the predetermined temperature for a predetermined time, and then raising the temperature to the melting point of the first component or more. In the second step, the temperature above the melting point of the first component is maintained until the first component infiltrates into the sintered body composed of the second component, and then the melting point of the first component is exceeded. Also comprises a third step of gradually cooling to a temperature lower by 100 ° C. or more.
【0016】ここでCu,AgおよびCr,W,Mo,
Ti,Ta,Nb,Zr,Co,Niについては、上記
した本願第1および第2の発明の接点材料と同様であ
る。なお第2の成分として炭化物を用いる場合には、C
oおよび/またはNiを同時に用いるのが好ましい。Here, Cu, Ag and Cr, W, Mo,
Ti, Ta, Nb, Zr, Co and Ni are the same as the contact materials of the first and second inventions of the present application. When a carbide is used as the second component, C
It is preferable to use o and / or Ni at the same time.
【0017】また高導電成分である第1の成分を耐弧成
分である第2の成分よりなる焼結体に接触させるには、
例えば第1の成分を板状にする、第1の成分を粉末状と
するなどの方法がある。In order to bring the first component, which is a highly conductive component, into contact with the sintered body composed of the second component, which is an arc resistant component,
For example, there is a method in which the first component is made into a plate shape and the first component is made into a powder form.
【0018】第1の工程で400℃以上,前記第1の成
分の融点未満の所定の温度まで急加熱するとしたのは、
400℃未満ではワーク中に存在する吸着ガス、水分な
どの不純物が発生し、この不純物が存在する環境下で加
熱することによりゆっくり昇温することとなり、従来の
問題点を解決できない。また第1の成分の融点以上の温
度とした場合、焼結体である第2の成分が均一な温度分
布となっていないうちに第1の成分が溶融してしまうた
め、組織に不均一が生じ好ましくない。なお第1の成分
である銅の融点は1083.4℃、銀の融点は961.
93℃である。また好ましい所定温度の範囲としては5
00〜600℃である。In the first step, rapid heating to 400 ° C. or higher and a predetermined temperature below the melting point of the first component is
If the temperature is lower than 400 ° C., impurities such as adsorbed gas and water existing in the work are generated, and the temperature is slowly raised by heating in an environment where the impurities are present, and the conventional problems cannot be solved. Further, when the temperature is equal to or higher than the melting point of the first component, the first component melts before the second component, which is a sintered body, has a uniform temperature distribution. It is not preferred. The melting point of the first component, copper, is 1083.4 ° C., and the melting point of silver is 961.
It is 93 ° C. Further, the preferable predetermined temperature range is 5
It is 00-600 degreeC.
【0019】次に所定の温度で所定時間保持するとした
のは、ワークを均一な温度分布とするためである。また
第1の成分の融点以上の温度に昇温するとしたのは、第
1の成分を溶融させ、第2の成分の焼結体に溶浸させる
ためである。なおここで好ましい範囲としては第1の成
分の融点から5℃以上上の温度であり、特に好ましい範
囲は第1の成分の融点から10℃以上上の温度である。
またこの時の昇温速度は3〜7℃/min程度が好まし
い。The reason why the temperature is kept at a predetermined temperature for a predetermined time is that the work has a uniform temperature distribution. Further, the reason why the temperature is raised to a temperature equal to or higher than the melting point of the first component is to melt the first component and infiltrate it into the sintered body of the second component. Here, a preferable range is a temperature 5 ° C. or higher above the melting point of the first component, and a particularly preferable range is a temperature 10 ° C. or higher above the melting point of the first component.
Further, the temperature rising rate at this time is preferably about 3 to 7 ° C./min.
【0020】次に第1の成分が第2の成分よりなる焼結
体に溶浸するまで第1の成分の融点以上の温度を保持す
るとしたのは、第1の成分と第2の成分による化合物を
十分に形成させるためである。The reason why the temperature above the melting point of the first component is maintained until the first component infiltrates into the sintered body composed of the second component is that the first component and the second component This is because the compound is sufficiently formed.
【0021】またその後第1の成分の融点よりも100
℃以上低い温度まで徐冷するとしたのは、第1の成分の
融点まで冷却しても、第1の成分および第2の成分の反
応で液相が生成しており、これらは第1の成分の融点よ
りも低い融点を有しているためである。しかし第1の成
分の融点よりも100℃低い温度であればこれらの相も
凝固するので、この温度まで徐冷すればほぼ均一な耐弧
成分の組織が得られ、十分である。またこの時の冷却速
度は、3℃/min以下が好ましい。Further, after that, 100 is higher than the melting point of the first component.
The reason for gradually cooling to a temperature lower than ℃ is that the liquid phase is generated by the reaction of the first component and the second component even when cooled to the melting point of the first component. This is because it has a melting point lower than that of However, if the temperature is 100 ° C. lower than the melting point of the first component, these phases also solidify. Therefore, slow cooling to this temperature is sufficient because a substantially uniform arc-resistant component structure can be obtained. Further, the cooling rate at this time is preferably 3 ° C./min or less.
【0022】なお、この温度まで冷却した後は製造時間
の短縮および第1の成分および第2の成分が不純物によ
り酸化されることをできるだけ防止するために速く冷却
した方が良いが、従来のようにそのまま徐冷しても昇温
時ほどには特性に悪影響を招かない。具体的には5℃/
min以上が好ましく、ワークを炉外へ取り出して放冷
するのはその一例である。After cooling to this temperature, it is better to cool it faster in order to shorten the manufacturing time and to prevent the first component and the second component from being oxidized by impurities as much as possible. Even if it is gradually cooled as it is, the characteristics are not adversely affected as much as when the temperature is raised. Specifically, 5 ° C /
min or more is preferable, and one example is to take the work out of the furnace and allow it to cool.
【0023】本願第4の発明の接点材料の製造方法は上
記した本願第3の発明の接点材料の製造方法のうち、特
に第1の工程の急加熱として炉中に投入することにより
行うことを特徴とするものである。The method for producing the contact material according to the fourth invention of the present application is carried out by placing the material in a furnace as rapid heating in the first step in the method for producing the contact material according to the third invention of the present application. It is a feature.
【0024】このように常温から所定の温度に加熱され
ている炉中にワークを投入することにより、微小時間で
ワークを所定の温度に昇温させることができ、しかもワ
ークに含有されている不純物である吸着ガスや水などに
より第1の成分または第2の成分が酸化されてしまう恐
れが少なくできる。したがって接点材料中に残存する不
純物、特に酸素、水素および窒素の含有量が飛躍的に低
減できる。By thus introducing the work into the furnace heated from room temperature to the predetermined temperature, the work can be heated to the predetermined temperature in a minute time, and the impurities contained in the work can be increased. It is possible to reduce the risk that the first component or the second component is oxidized by the adsorbed gas or water. Therefore, the contents of impurities remaining in the contact material, particularly oxygen, hydrogen and nitrogen, can be dramatically reduced.
【0025】[0025]
【作用】上記構成としたことにより、導電率および硬度
が高く、またほぼ均一な耐弧成分の組織を有する接点材
料が得られる。また再点弧現象の発生の原因となるガス
成分の量が効果的に低減される。With the above structure, a contact material having high conductivity and hardness and having a substantially uniform structure of arc-resistant component can be obtained. In addition, the amount of the gas component that causes the occurrence of the re-ignition phenomenon is effectively reduced.
【0026】[0026]
【実施例】以下、本発明の実施例につき説明する。 ・実施例1 50×50×6mmのCu板上に空孔率を約50%に調
整したφ45×10tmmのCrの焼結体を載置しワー
クを形成した(Cu55.4wt%)。EXAMPLES Examples of the present invention will be described below. Example 1 A work piece was formed by placing a φ45 × 10 t mm Cr sintered body having a porosity adjusted to about 50% on a 50 × 50 × 6 mm Cu plate (Cu 55.4 wt%).
【0027】他方、真空炉を600℃とし、この真空炉
に上記したワークを投入し、ワークを急加熱した。炉の
温度は一旦は550℃に低下したが、すぐに600℃に
回復し、この温度で1時間保持した。On the other hand, the vacuum furnace was set to 600 ° C., the above-mentioned work was put into this vacuum furnace, and the work was rapidly heated. The temperature of the furnace once dropped to 550 ° C, but immediately recovered to 600 ° C, and this temperature was maintained for 1 hour.
【0028】その後、5℃/minの昇温速度で110
0℃まで昇温し0.5時間保持して、CuをCr焼結体
に溶浸させた。その後2℃/minの冷却速度で900
℃まで徐冷し、その後常温まで放熱した。Thereafter, 110 at a temperature rising rate of 5 ° C./min.
The temperature was raised to 0 ° C. and kept for 0.5 hour to infiltrate Cu into the Cr sintered body. Then 900 at a cooling rate of 2 ° C / min
It was gradually cooled to ℃ and then radiated to room temperature.
【0029】この時の製造時間とワークの温度との関係
を図1に示す。 ・実施例2 50×50×6mmのCu板上に空孔率を約50%に調
整したφ45×10tmmのCrの焼結体を載置しワー
クを形成した(Cu55.4wt%)。FIG. 1 shows the relationship between the manufacturing time and the temperature of the work at this time. Example 2 A φ45 × 10 t mm sintered body of Cr having a porosity adjusted to about 50% was placed on a Cu plate of 50 × 50 × 6 mm to form a work (Cu55.4 wt%).
【0030】他方、真空炉を400℃とし、この真空炉
に上記したワークを投入し、ワークを急加熱した。炉の
温度は一旦は350℃に低下したが、すぐに400℃に
回復し、この温度で1時間保持した。On the other hand, the vacuum furnace was set to 400 ° C., the above-mentioned work was put into this vacuum furnace, and the work was rapidly heated. The temperature of the furnace once dropped to 350 ° C, but immediately recovered to 400 ° C, and this temperature was maintained for 1 hour.
【0031】その後、5℃/minの昇温速度で110
0℃まで昇温し0.5時間保持して、CuをCr焼結体
に溶浸させた。その後2℃/minの冷却速度で900
℃まで徐冷し、その後常温まで放熱した。 ・実施例3 50×50×6mmのCu板上に空孔率を約50%に調
整したφ45×10tmmのCrの焼結体を載置しワー
クを形成した(Cu55.4wt%)。After that, 110 at a temperature rising rate of 5 ° C./min.
The temperature was raised to 0 ° C. and kept for 0.5 hour to infiltrate Cu into the Cr sintered body. Then 900 at a cooling rate of 2 ° C / min
It was gradually cooled to ℃ and then radiated to room temperature. Example 3 A φ45 × 10 t mm sintered body of Cr having a porosity adjusted to about 50% was placed on a Cu plate of 50 × 50 × 6 mm to form a work (Cu55.4 wt%).
【0032】他方、真空炉を900℃とし、この真空炉
に上記したワークを投入し、ワークを急加熱した。炉の
温度は一旦は800℃に低下したが、すぐに900℃に
回復し、この温度で1時間保持した。On the other hand, the vacuum furnace was set to 900 ° C., the above-mentioned work was put into this vacuum furnace, and the work was rapidly heated. The temperature of the furnace once dropped to 800 ° C, but immediately recovered to 900 ° C, and this temperature was maintained for 1 hour.
【0033】その後、5℃/minの昇温速度で110
0℃まで昇温し0.5時間保持して、CuをCr焼結体
に溶浸させた。その後2℃/minの冷却速度で900
℃まで徐冷し、その後常温まで放熱した。 ・実施例4 50×50×5mmのCu板上に空孔率を約50%に調
整したφ50×5t mmのWの焼結体を載置しワークを
形成した(Cu31.8wt%)。After that, 110 at a temperature rising rate of 5 ° C./min.
The temperature was raised to 0 ° C. and kept for 0.5 hour to infiltrate Cu into the Cr sintered body. Then 900 at a cooling rate of 2 ° C / min
It was gradually cooled to ℃ and then radiated to room temperature. Example 4 A workpiece was formed by placing a W sintered body of φ50 × 5 t mm having a porosity adjusted to about 50% on a Cu plate of 50 × 50 × 5 mm (Cu 31.8 wt%).
【0034】他方、真空炉を600℃とし、この真空炉
に上記したワークを投入し、ワークを急加熱した。炉の
温度は一旦は500℃に低下したが、すぐに600℃に
回復し、この温度で1時間保持した。On the other hand, the vacuum furnace was set to 600 ° C., the above-mentioned work was put into this vacuum furnace, and the work was rapidly heated. The temperature of the furnace once dropped to 500 ° C, but immediately recovered to 600 ° C, and this temperature was maintained for 1 hour.
【0035】その後、5℃/minの昇温速度で110
0℃まで昇温し0.5時間保持して、CuをW焼結体に
溶浸させた。その後2℃/minの冷却速度で900℃
まで徐冷し、その後常温まで放熱した。 ・実施例5 50×50×3mmのAg板上に空孔率を約55%に調
整したφ50×10tmmのWの焼結体を載置しワーク
を形成した(Ag40.0wt%)。Then, at a temperature rising rate of 5 ° C./min, 110
The temperature was raised to 0 ° C. and maintained for 0.5 hour to infiltrate Cu into the W sintered body. Then 900 ℃ at a cooling rate of 2 ℃ / min
It was slowly cooled to room temperature and then radiated to room temperature. Example 5 A workpiece was formed by placing a φ50 × 10 t mm W sintered body having a porosity adjusted to about 55% on a 50 × 50 × 3 mm Ag plate (Ag 40.0 wt%).
【0036】他方、真空炉を600℃とし、この真空炉
に上記したワークを投入し、ワークを急加熱した。炉の
温度は一旦は500℃に低下したが、すぐに600℃に
回復し、この温度で1時間保持した。On the other hand, the vacuum furnace was set to 600 ° C., the above-mentioned work was put into this vacuum furnace, and the work was rapidly heated. The temperature of the furnace once dropped to 500 ° C, but immediately recovered to 600 ° C, and this temperature was maintained for 1 hour.
【0037】その後、5℃/minの昇温速度で100
0℃まで昇温し0.5時間保持して、AgをW焼結体に
溶浸させた。その後2℃/minの冷却速度で800℃
まで徐冷し、その後常温まで放熱した。 ・比較例1 50×50×6mmのCu板上に空孔率を約50%に調
整したφ45×10tmmのCrの焼結体を載置しワー
クを形成した(Cu55.4wt%)。Then, the temperature is raised to 100 at a temperature rising rate of 5 ° C./min.
The temperature was raised to 0 ° C. and maintained for 0.5 hour to infiltrate Ag into the W sintered body. Then 800 ℃ at a cooling rate of 2 ℃ / min
It was slowly cooled to room temperature and then radiated to room temperature. Comparative Example 1 A workpiece was formed by placing a φ45 × 10 t mm Cr sintered body having a porosity adjusted to about 50% on a Cu plate of 50 × 50 × 6 mm (Cu 55.4 wt%).
【0038】これを真空炉中に載置し、4℃/minの
昇温速度で加熱した。炉の温度を1000℃まで加熱し
て、この温度で1時間保持した。その後、4℃/min
の昇温速度で1100℃まで昇温し0.5時間保持し
て、CuをCr焼結体に溶浸させた。This was placed in a vacuum furnace and heated at a temperature rising rate of 4 ° C./min. The furnace temperature was heated to 1000 ° C. and kept at this temperature for 1 hour. After that, 4 ℃ / min
The temperature was raised to 1100 ° C. at a heating rate of 1 and held for 0.5 hour to infiltrate Cu into the Cr sintered body.
【0039】その後6℃/minの冷却速度で常温まで
冷却した。この時の製造時間とワークの温度との関係を
図2に示す。 ・比較例2 50×50×5mmのCu板上に空孔率を約50%に調
整したφ50×5t mmのWの焼結体を載置しワークを
形成した(Cu31.8wt%)。Thereafter, it was cooled to room temperature at a cooling rate of 6 ° C./min. The relationship between the manufacturing time and the temperature of the work at this time is shown in FIG. Comparative Example 2 A work piece was formed by placing a φ50 × 5 t mm W sintered body having a porosity adjusted to about 50% on a 50 × 50 × 5 mm Cu plate (Cu 31.8 wt%).
【0040】これを真空炉中に載置し、5℃/minの
昇温速度で加熱した。炉の温度を1000℃まで加熱し
て、この温度で1時間保持した。その後、5℃/min
の昇温速度で1100℃まで昇温し0.5時間保持し
て、CuをW焼結体に溶浸させた。This was placed in a vacuum furnace and heated at a heating rate of 5 ° C./min. The furnace temperature was heated to 1000 ° C. and kept at this temperature for 1 hour. After that, 5 ℃ / min
The temperature was raised to 1100 ° C. at a heating rate of 1 and held for 0.5 hour to infiltrate Cu into the W sintered body.
【0041】その後6℃/minの冷却速度で常温まで
冷却した。 ・比較例3 50×50×3mmのAg板上に空孔率を約50%に調
整したφ50×5t mmのWの焼結体を載置しワークを
形成した(Ag40.0wt%)。Then, it was cooled to room temperature at a cooling rate of 6 ° C./min. Comparative Example 3 A workpiece was formed by placing a φ50 × 5 t mm W sintered body having a porosity adjusted to about 50% on a 50 × 50 × 3 mm Ag plate (Ag 40.0 wt%).
【0042】これを真空炉中に載置し、5℃/minの
昇温速度で加熱した。炉の温度を1000℃まで加熱し
て、この温度で1時間保持した。その後、5℃/min
の昇温速度で1100℃まで昇温し0.5時間保持し
て、AgをW焼結体に溶浸させた。This was placed in a vacuum furnace and heated at a temperature rising rate of 5 ° C./min. The furnace temperature was heated to 1000 ° C. and kept at this temperature for 1 hour. After that, 5 ℃ / min
The temperature was raised to 1100 ° C. at a heating rate of 1 and held for 0.5 hour to infiltrate the W sintered body with Ag.
【0043】その後6℃/minの冷却速度で常温まで
冷却した。これらの製造方法により得られた接点材料に
つき、不純物含有量(ppm)、導電性(%IACS)
および硬度(HRB)につき評価を行った。その結果を
表1に示す。Then, it was cooled to room temperature at a cooling rate of 6 ° C./min. Impurity content (ppm), conductivity (% IACS) of contact materials obtained by these manufacturing methods
And the hardness (HRB) was evaluated. The results are shown in Table 1.
【0044】[0044]
【表1】 [Table 1]
【0045】この表1の結果から、本願発明の接点材料
は不純物、とくに酸素、水素、窒素の含有量が従来と比
べて1/2以下となり純度が高く、高導電率、高硬度を
有していることがわかる。 ・実施例6 50×50×4mmのAg板上に空孔率を約40%に調
整したφ50×5t mmのCoを0.7%含有するWC
の焼結体を載置しワークを形成した(Ag31.0wt
%)。From the results shown in Table 1, the contact material of the present invention has a content of impurities, especially oxygen, hydrogen, and nitrogen, which is 1/2 or less of that of the conventional material, and has high purity, high conductivity and high hardness. You can see that Example 6 WC containing 0.7% of Co of φ50 × 5 t mm with porosity adjusted to about 40% on an Ag plate of 50 × 50 × 4 mm
The sintered body was placed to form a work (Ag 31.0 wt
%).
【0046】他方、真空炉を600℃とし、この真空炉
に上記したワークを投入し、ワークを急加熱した。炉の
温度は一旦は500℃に低下したが、すぐに600℃に
回復し、この温度で1時間保持した。On the other hand, the vacuum furnace was set to 600 ° C., the above-mentioned work was put into this vacuum furnace, and the work was rapidly heated. The temperature of the furnace once dropped to 500 ° C, but immediately recovered to 600 ° C, and this temperature was maintained for 1 hour.
【0047】その後、5℃/minの昇温速度で100
0℃まで昇温し0.5時間保持して、AgをWC焼結体
に溶浸させた。その後2℃/minの冷却速度で800
℃まで徐冷し、その後常温まで放熱した。 ・比較例4 50×50×5mmのAg板上に空孔率を約40%に調
整したφ50×5t mmのCoを0.7%含有するWC
の焼結体を載置しワークを形成した(Ag31.0wt
%)。Thereafter, the temperature is raised at a rate of 5 ° C./min to 100
The temperature was raised to 0 ° C. and maintained for 0.5 hour to infiltrate Ag into the WC sintered body. Then 800 at a cooling rate of 2 ° C / min
It was gradually cooled to ℃ and then radiated to room temperature. Comparative Example 4 WC containing 0.7% of φ50 × 5 t mm Co on a 50 × 50 × 5 mm Ag plate with porosity adjusted to about 40%.
The sintered body was placed to form a work (Ag 31.0 wt
%).
【0048】これを真空炉中に載置し、5℃/minの
昇温速度で加熱した。炉の温度を800℃まで加熱し
て、この温度で1時間保持した。その後、5℃/min
の昇温速度で1000℃まで昇温し0.5時間保持し
て、AgをWC焼結体に溶浸させた。This was placed in a vacuum furnace and heated at a temperature rising rate of 5 ° C./min. The furnace temperature was heated to 800 ° C. and held at this temperature for 1 hour. After that, 5 ℃ / min
The temperature was raised up to 1000 ° C. and kept for 0.5 hour to infiltrate Ag into the WC sintered body.
【0049】その後6℃/minの冷却速度で常温まで
冷却した。これらの製造方法により得られた接点材料に
つき、不純物含有量(ppm)、導電性(%IACS)
および硬度(HRC)につき評価を行った。その結果を
表2に示す。Then, it was cooled to room temperature at a cooling rate of 6 ° C./min. Impurity content (ppm), conductivity (% IACS) of contact materials obtained by these manufacturing methods
And the hardness (HRC) was evaluated. The results are shown in Table 2.
【0050】[0050]
【表2】 [Table 2]
【0051】この表2の結果から耐弧成分として炭化物
を用いた場合でも、表1と同様に本願発明の接点材料は
不純物、とくに酸素,水素,窒素の含有量が従来と比べ
て1/2以下となり純度が高く、高導電率,高硬度を有
していることがわかる。From the results shown in Table 2, even when a carbide is used as the arc-resistant component, the contact material of the present invention has a content of impurities, particularly oxygen, hydrogen, and nitrogen, which is half that of the conventional one. The following shows that the purity is high, and the conductivity and hardness are high.
【0052】[0052]
【発明の効果】以上説明したように本発明によれば、導
電率および硬度が高く、またほぼ均一な耐弧成分の組織
を有する接点材料が得られた。また再点弧現象の発生し
にくい接点材料が得られた。したがってこの接点材料を
真空バルブ、気中バルブなどの電気接点材料として用い
ることにより、高い遮断特性を発揮する。As described above, according to the present invention, a contact material having high conductivity and hardness, and having a substantially uniform structure of arc-resistant component was obtained. In addition, contact materials were obtained that were unlikely to cause re-ignition. Therefore, by using this contact material as an electric contact material for vacuum valves, air valves, etc., high breaking characteristics are exhibited.
【図1】 図1は実施例1における製造時間とワークの
温度との関係を示す図である。FIG. 1 is a diagram showing a relationship between a manufacturing time and a temperature of a work in Example 1.
【図2】 図2は比較例1における製造時間とワークの
温度との関係を示す図である。FIG. 2 is a diagram showing a relationship between a manufacturing time and a temperature of a work in Comparative Example 1.
Claims (4)
成分を10〜90重量%、残部Cr,W,Mo,Ti,
Ta,Nb,Zr,Co,Niの単体および/または炭
化物からなる群から選ばれた少なくとも1種以上からな
る第2の成分よりなり、かつ含有する酸素,水素および
窒素の総量が150ppm以下であることを特徴とする
接点材料。1. A first component comprising Cu and / or Ag in an amount of 10 to 90% by weight and the balance Cr, W, Mo, Ti,
The second component is composed of at least one selected from the group consisting of simple substances of Ta, Nb, Zr, Co, Ni and / or carbides, and the total amount of oxygen, hydrogen and nitrogen contained is 150 ppm or less. Contact material characterized by the following.
成分を10〜90重量%、残部Cr,W,Mo,Ti,
Ta,Nb,Zr,Co,Niの単体および/または炭
化物からなる群から選ばれた少なくとも1種以上からな
る第2の成分よりなり、かつ不純物として酸素100p
pm以下、水素20ppm以下および窒素30ppm以
下含有することを特徴とする接点材料。2. A first component comprising Cu and / or Ag in an amount of 10 to 90% by weight and the balance Cr, W, Mo, Ti,
Ta, Nb, Zr, Co, Ni simple substance and / or a second component consisting of at least one selected from the group consisting of carbides, and oxygen 100p as an impurity
A contact material containing pm or less, hydrogen 20 ppm or less and nitrogen 30 ppm or less.
成分をCr,W,Mo,Ti,Ta,Nb,Zr,C
o,Niの単体および/または炭化物からなる群から選
ばれた少なくとも1種以上からなる第2の成分よりなる
焼結体と接触させ、これを400℃以上,前記第1の成
分の融点未満の所定の温度まで急加熱する第1の工程
と、前記所定の温度で所定時間保持した後、前記第1の
成分の融点以上の温度に昇温する第2の工程と、前記第
1の成分が前記第2の成分よりなる焼結体に溶浸するま
で前記第1の成分の融点以上の温度を保持し、その後前
記第1の成分の融点よりも100℃以上低い温度まで徐
冷する第3の工程とからなることを特徴とする接点材料
の製造方法。3. A first component comprising Cu and / or Ag is added to Cr, W, Mo, Ti, Ta, Nb, Zr, C.
o, Ni is brought into contact with a sintered body composed of at least one second component selected from the group consisting of simple substances and / or carbides, and this is kept at 400 ° C. or higher and lower than the melting point of the first component. A first step of rapidly heating to a predetermined temperature; a second step of maintaining the temperature at the predetermined temperature for a predetermined time and then raising the temperature to a temperature equal to or higher than the melting point of the first component; A temperature equal to or higher than the melting point of the first component is maintained until it is infiltrated into the sintered body including the second component, and then gradually cooled to a temperature 100 ° C. or more lower than the melting point of the first component. And a step of manufacturing a contact material.
とにより行う請求項3記載の接点材料の製造方法。4. The method for producing a contact material according to claim 3, wherein the rapid heating in the first step is performed by charging in a furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5327887A JPH07192565A (en) | 1993-12-24 | 1993-12-24 | Contact material and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5327887A JPH07192565A (en) | 1993-12-24 | 1993-12-24 | Contact material and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07192565A true JPH07192565A (en) | 1995-07-28 |
Family
ID=18204096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5327887A Pending JPH07192565A (en) | 1993-12-24 | 1993-12-24 | Contact material and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07192565A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100400354B1 (en) * | 2000-12-07 | 2003-10-04 | 한국과학기술연구원 | Fabrication Method of Cu-Cr Contact Materials for Vacuum Switches |
| WO2011162107A1 (en) * | 2010-06-22 | 2011-12-29 | 株式会社アライドマテリアル | Electrical contact material |
-
1993
- 1993-12-24 JP JP5327887A patent/JPH07192565A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100400354B1 (en) * | 2000-12-07 | 2003-10-04 | 한국과학기술연구원 | Fabrication Method of Cu-Cr Contact Materials for Vacuum Switches |
| WO2011162107A1 (en) * | 2010-06-22 | 2011-12-29 | 株式会社アライドマテリアル | Electrical contact material |
| JP4898978B2 (en) * | 2010-06-22 | 2012-03-21 | 株式会社アライドマテリアル | Electrical contact material |
| CN102947475A (en) * | 2010-06-22 | 2013-02-27 | 联合材料公司 | Electrical contact material |
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