JPH07193183A - Resin-sealed semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) [Abstract] [Purpose] A resin-encapsulated semiconductor device excellent in die-bonding property, in which bubbles are not generated by forming a loose curved surface portion on an insulating adhesive sheet without narrowing the width of the inner lead. And a method for manufacturing the same. In a resin-sealed semiconductor device in which an inner lead and an IC chip are joined by an insulating adhesive sheet, an inner lead 14 having a loosely curved surface portion 18 formed therein.
And an insulating adhesive sheet 13 fixed to the inner leads 14, and a loose ridge-shaped curved surface portion is provided on an adhesive surface of the insulating adhesive sheet 13 to the IC chip 11.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a resin-sealed semiconductor device and a method of manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, as a technique in such a field,
For example, there is one disclosed in Japanese Patent Laid-Open No. 61-218139, and as the size of the IC chip increases, the size between the package side end and the tab that is the IC chip mounting portion tends to become narrower. This is because the size of the package cannot be increased because the package size for accommodating the IC chip is standardized even though the IC chip is large.

As a result, of the leads which are external terminals,
In a so-called short lead, which has a structure in which the length embedded in the resin forming the package is short, the adhesive strength is further reduced, and the package is easily pulled out.
Further, the lead and the resin are easily peeled off during lead bending. As a result, the reliability of the semiconductor device is likely to deteriorate, such as poor electrical continuity or deterioration in moisture resistance.

Therefore, an insulating sheet having a size that does not cover the bonding pads is adhered to the non-circuit forming surface of the IC chip, inner leads are extended on the upper surface of the insulating sheet, and the inner leads and the molding resin are provided. The adhesive strength is greatly improved, and even if a large IC chip is mounted, it is possible to prevent the leads from coming off from the molding resin.

FIG. 6 is a plan sectional view of such a conventional resin-sealed semiconductor device, FIG. 7 is a sectional view taken along the line AA of FIG. 6, and FIG.
FIG. Here, the resin-sealed semiconductor device is shown as a lead-on-chip package. That is, the inner leads 4 are fixed to the IC chip 1 via the insulating adhesive sheet 3. This insulating adhesive sheet 3 has a base film 6 in the center and adhesives 5 are provided on both sides thereof.

After the inner lead 4 is fixed to the IC chip 1, the IC chip 1 and the inner lead 4 are connected by a thin metal wire (not shown), and finally the IC chip 1 is sealed with a mold resin 2. .

[0007]

However, in the conventional resin-sealed semiconductor device described above, as shown in FIG.
Insulating adhesive sheet 3 and IC chip 1 during die bonding
There is a problem in that air is trapped during this period and bubbles 7 are generated, which affects the solder heat resistance. In order to avoid this, there is also a method of narrowing the width of the inner lead 4 shown in FIG. 6, but in that case, there is a fear of insufficient strength on the second bond side during wire bonding.

The present invention eliminates the above-mentioned problem that air bubbles are formed between the insulating adhesive sheet under the inner lead and the IC chip, so that the insulating adhesive sheet can be formed without narrowing the width of the inner lead. It is an object of the present invention to provide a resin-encapsulated semiconductor device having excellent die-bonding properties, in which bubbles are not formed by forming a curved surface having a gentle ridge shape, and a method for manufacturing the same.

[0009]

In order to achieve the above object, the present invention provides a resin-sealed semiconductor device in which an inner lead and an IC chip are joined by an insulating adhesive sheet,
An inner lead having a loose raised curved surface portion and an insulating adhesive sheet fixed to the inner lead are provided, and a loose raised curved surface portion is provided on an adhesive surface of the insulating adhesive sheet to the IC chip. It is a thing.

Further, in the method of manufacturing a resin-sealed semiconductor device in which the inner lead and the IC chip are joined by an insulating adhesive sheet, the step of forming a loose raised curved surface portion on the inner lead and the same loose lead on the inner lead. A step of adhering an insulating adhesive sheet having a raised curved surface portion and a step of die-bonding a loose raised curved surface portion of the insulating adhesive sheet to an IC chip are performed.

[0011]

As described above, the present invention has an inner lead forming a loose curved surface portion and an insulating adhesive sheet fixed to the inner lead, and adhering the insulating adhesive sheet to an IC chip. Since a curved surface with a gentle ridge shape is formed on the surface, when the inner lead is die-bonded to the IC chip, the inner lead is gradually joined to the IC chip from the central part of the insulating adhesive sheet, and air is pushed out to the outside. Unlike the conventional case, bubbles are not generated on the bonding surface of the adhesive sheet to the IC chip, and it is possible to perform bubble-free die bonding.

[0012]

Embodiments of the present invention will now be described in detail with reference to the drawings. FIG. 1 is a partial cross-sectional view (enlarged part B of FIG. 3) of a main part of a resin-encapsulated semiconductor device showing a first embodiment of the present invention, and FIG. 2 is a resin-encapsulated semiconductor showing the first embodiment of the present invention. 2 is a plan sectional view of the apparatus, FIG. 3 is a sectional view taken along line BB of FIG.
FIG. 4 is a manufacturing process diagram of the inner leads of the resin-sealed semiconductor device. Here, LOC (lead-on-chip)
Will be described.

As shown in FIGS. 1 to 3, the IC chip 11
Inner lead 1 having a loosely raised curved surface portion 18
4 is similarly fixed via an insulating adhesive sheet 13 having a loose curved surface portion. This insulating adhesive sheet 13 has a base film 16 in the center and adhesive materials 15 on both sides thereof.
Is provided. Further, after the inner lead 14 is fixed to the IC chip 11, the IC chip 11 and the inner lead 14 are connected by a thin metal wire 25 [see FIG. 5 (d)], and finally the IC chip 11 is sealed with the mold resin 12. To be done.

Next, a method for manufacturing the inner leads of the resin-sealed semiconductor device showing the first embodiment of the present invention will be described with reference to FIG.
Will be explained. Here, a manufacturing method using a punch will be described. First, as shown in FIG. 4A, the inner lead 14 is fixed by a lower die 21 having a recess for displacing the upper die 20 and the inner lead 14.

Next, as shown in FIG. 4B, the inner lead 14 is pressed by the punch 22. Then, the inner lead 14 is formed with a gentle raised curved surface portion 18 below. At this time, the second surface of the inner lead 14 for wire bonding (about 0.3 mm or more from the tip of the inner lead 14) is not pressed.

Next, as shown in FIG. 4C, the second surface 23 for wire bonding is subjected to Ag plating. Next, as shown in FIG. 4D, the insulating adhesive sheet 13 is attached to the inner leads 14. At this time, the insulating adhesive sheet 13 is attached to the mold (not shown) on the insulating adhesive sheet side.
In order to form a loose raised curved surface portion 13a, a gentle depression is formed.

The insulating adhesive sheet 1 thus obtained
The inner leads 14 to which 3 is fixed are die-bonded to the IC chip 11, as shown in FIG. That is, the insulating adhesive sheet 13 has a bulged central portion. Therefore, at the time of die-bonding to the IC chip 11, since the air is gradually bonded to the IC chip 11 from the central portion of the insulating adhesive sheet 13 and air is pushed outward, air bubbles 7 as shown in FIG. Disappeared
Die bonding without bubbles can be performed.

The die bonding process for the inner leads will be described in detail with reference to FIG. When the inner lead 14 to which the insulating adhesive sheet 13 is fixed is obtained as described above, it is positioned at the die bonding position of the IC chip 11 as shown in FIG.

Next, as shown in FIG. 5B, the inner leads 14 are die-bonded to the IC chip 11.
At this time, a loose, raised curved surface portion 13a is formed on the surface of the insulating adhesive sheet 13 to be bonded to the IC chip 11, and the insulating adhesive sheet 13 has a raised central portion. The adhesive is gradually bonded to the IC chip 11 from the center of the adhesive sheet 13, and the air is pushed outward.

Next, as shown in FIG. 5C, the inner lead 14 is die-bonded to the die-bonding position of the IC chip 11 without bubbles. Next, FIG.
As shown in (d), the thin metal wire 25 is first bonded to the bonding pad 19 of the IC chip 11, and the second metal wire 25 is second bonded to the second wire bonding surface 23 of the inner lead 14.

Next, a second embodiment of the present invention will be described with reference to the drawings. FIG. 9 is a cross-sectional view of a resin-encapsulated semiconductor device showing a second embodiment of the present invention, and FIG. 10 is an enlarged cross-sectional view (enlarged C part of FIG. 9) of the resin-encapsulated semiconductor device. Here, COL (chip on read) will be described. As shown in FIGS. 9 to 10, the inner lead 34 having the loose raised curved surface portion 38 is similarly fixed to the IC chip 31 via the insulating adhesive sheet 33 having the loose raised curved surface portion. This insulating adhesive sheet 33 has a base film 35 in the center and adhesives 36 on both sides thereof.

In addition, the inner lead 34 is the IC chip 3
1 is fixed to the IC chip 31 and the inner lead 3
4 are connected by a thin metal wire 37. That is, IC chip 3
The thin metal wire 37 is first bonded to the first bonding pad 34, and the thin metal wire 37 is second bonded to the second surface of the inner lead 34. Finally, the IC chip 31 is sealed with the mold resin 32.

Next, a third embodiment of the present invention will be described with reference to the drawings. In this embodiment, unevenness is formed on the side of the inner lead opposite to the side where the insulating adhesive sheet is provided so as to improve the adhesion with the molding resin. Hereinafter, a method of manufacturing the inner lead will be described with reference to FIG. Here, a manufacturing method by coining will be described.

First, as shown in FIG. 11A, the inner lead 41 is set on a lower mold 51 having a loose recess for deforming the inner lead 41, and the inner lead 41 is fixed by a clamper 52. . Then, FIG.
As shown in (b), the inner die 4 is
1 is pressed to form a loose, raised curved surface portion 42. At this time, an uneven portion 53 is provided on the surface of the upper die 50 that contacts the inner lead 41 except for the second surface for wire bonding.

Next, as shown in FIG. 11 (c), a concavo-convex portion 44 is formed on the inner lead 41 except for the second surface 43 for wire bonding on the side opposite to where the insulating adhesive sheet is provided. Next, the second surface 43 for wire bonding of the inner lead 41 is subjected to Ag plating. Next, as shown in FIG. 11D, the insulating adhesive sheet 45 is fixed. The insulating adhesive sheet 45 has a base film 46 in the center and adhesives 47 on both sides thereof.

Insulating adhesive sheet 4 thus obtained
The inner lead 41 having the number 5 is fixed to an IC chip (not shown), wire bonding is performed, and then resin sealing is performed. As described above, since the inner lead 41 is formed with the uneven portion 44, the mold resin to be resin-sealed is filled in the uneven portion 44, the adhesiveness with the mold resin is increased, and the package side end and the IC chip are increased. Even if the dimension between the tab, which is the mounting portion, becomes narrower, the inner lead 41
It is possible to increase the pull-out strength of.

Needless to say, the inner lead 41 having the insulating adhesive sheet thus obtained can be applied to either LOC (lead-on-chip) or COL (chip-on-lead). The present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.

[0028]

As described above in detail, according to the present invention, the insulating adhesive sheet for adhering to the IC chip is provided with the loose curved surface portion, so that the insulating adhesive sheet and the IC chip are bonded together. It is possible to obtain a resin-encapsulated semiconductor device which has excellent solder heat resistance and does not generate bubbles on the joint surface.

Further, as described in claim 2, the unevenness is formed on the surface of the inner lead, so that the adhesion between the inner lead and the sealing resin can be improved and the pulling strength of the inner lead can be improved. .

[Brief description of drawings]

FIG. 1 is a partial cross-sectional view (enlarged part B in FIG. 3) of a main part of a resin-sealed semiconductor device showing a first embodiment of the present invention.

FIG. 2 is a plan sectional view of a resin-encapsulated semiconductor device showing a first embodiment of the present invention.

FIG. 3 is a sectional view taken along line BB of FIG.

FIG. 4 is a manufacturing process diagram of the inner leads of the resin-encapsulated semiconductor device showing the first embodiment of the present invention.

FIG. 5 is a cross-sectional view of the mounting process of the inner leads of the resin-sealed semiconductor device according to the first embodiment of the present invention on an IC chip.

FIG. 6 is a plan sectional view of a conventional resin-sealed semiconductor device.

7 is a cross-sectional view taken along the line AA of FIG.

FIG. 8 is an enlarged view of part A in FIG.

FIG. 9 is a sectional view of a resin-sealed semiconductor device showing a second embodiment of the present invention.

FIG. 10 is an enlarged cross-sectional view (enlarged C part of FIG. 9) of a main part of a resin-encapsulated semiconductor device showing a second embodiment of the present invention.

FIG. 11 is a sectional view of a step of manufacturing the inner lead of the resin-encapsulated semiconductor device showing the second embodiment of the present invention.

[Explanation of symbols]

 11, 31 IC chip 12, 32 Mold resin 13, 33, 45 Insulation adhesive sheet 13a, 18, 38, 42 Loose raised curved surface portion 14, 34, 41 Inner lead 15, 36, 47 Adhesive material 16, 35, 46 Base film 19,34 Bonding pad 20,50 Upper mold 21,51 Lower mold 22 Punch 23,43 Second surface of wire bonding 25,37 Metal fine wire 44,53 Uneven portion 52 Clamper

Claims (4)

[Claims] 1. A resin-sealed semiconductor device in which an inner lead and an IC chip are joined by an insulating adhesive sheet,
(A) an inner lead having a loose curved surface,
(B) An insulating adhesive sheet fixed to the inner leads, and (c) a loose raised curved surface portion is provided on an adhesive surface of the insulating adhesive sheet to the IC chip. apparatus. 2. The resin-encapsulated semiconductor device according to claim 1, further comprising a concavo-convex portion on the side of the inner lead opposite to the side where the insulating adhesive sheet is provided. 3. A method of manufacturing a resin-encapsulated semiconductor device in which an inner lead and an IC chip are joined by an insulating adhesive sheet, wherein (a) a step of forming a loose, raised curved surface portion on the inner lead; A step of bonding an insulating adhesive sheet having a similar loose curved surface portion to the inner lead; and (c) a step of die bonding the loose raised curved surface portion of the insulating adhesive sheet to an IC chip. Of manufacturing resin-sealed semiconductor device. 4. The method of manufacturing a resin-encapsulated semiconductor device according to claim 3, wherein in the step (a), the inner lead is provided with a curved surface portion having a loose ridge shape and the inner lead is provided with a curved surface portion. A method for manufacturing a resin-encapsulated semiconductor device, which comprises forming a concavo-convex portion on the side.