JPH07201718A - Heat treatment apparatus and heat treatment method - Google Patents
Heat treatment apparatus and heat treatment methodInfo
- Publication number
- JPH07201718A JPH07201718A JP5352985A JP35298593A JPH07201718A JP H07201718 A JPH07201718 A JP H07201718A JP 5352985 A JP5352985 A JP 5352985A JP 35298593 A JP35298593 A JP 35298593A JP H07201718 A JPH07201718 A JP H07201718A
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- JP
- Japan
- Prior art keywords
- substrate
- mounting table
- processed
- heat treatment
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
(57)【要約】 (修正有)
【目的】 基板を載置する載置台と基板との接触する面
積を少なくして載置台から基板を搬送する際の剥離帯電
現象を減少させ、微細塵埃の付着を防止しするととも
に、放電による素子の破壊等を防止して、製品歩留りの
向上を図れるようにし、また基板の受渡しの際の基板の
位置ずれ、破損、落下を防止するとともに、均一な熱処
理を行う。
【構成】 基板を載置しこの基板の温度を制御する加熱
処理装置において、基板を載置する載置台60と、この
載置台60を介して基板に熱を供給する発熱体62と、
基板を支持する支持ピン70とを具備し、載置台60の
表面に溝71を設けた。
(57) [Summary] (Modified) [Purpose] The contact area between the mounting table on which the substrate is mounted and the substrate is reduced to reduce the peeling electrification phenomenon when the substrate is transported from the mounting table and to reduce the amount of fine dust. In addition to preventing adhesion, it is also possible to prevent damage to the element due to discharge, etc., to improve product yield, and to prevent misalignment, damage, and drop of the board when delivering it, and to perform uniform heat treatment. I do. In a heat treatment apparatus for mounting a substrate and controlling the temperature of the substrate, a mounting table 60 for mounting the substrate, and a heating element 62 for supplying heat to the substrate via the mounting table 60,
A support pin 70 for supporting the substrate is provided, and a groove 71 is provided on the surface of the mounting table 60.
Description
【0001】[0001]
【産業上の利用分野】この発明は、熱処理装置と熱処理
方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat treatment apparatus and a heat treatment method.
【0002】[0002]
【従来の技術】一般に、半導体デバイスやLCDの製造
工程においては、シリコン基板あるいはLCD基板(ガ
ラス基板)にフォトレジストを塗布し、フォトリソグラ
フィ技術を用いて回路パターン等を縮小してフォトレジ
ストに転写し、これを現像処理する一連の処理が施され
る。2. Description of the Related Art Generally, in the manufacturing process of semiconductor devices and LCDs, a photoresist is applied to a silicon substrate or an LCD substrate (glass substrate), and a circuit pattern or the like is reduced by using a photolithography technique and transferred to the photoresist. Then, a series of processes for developing this is performed.
【0003】上記の製造工程における処理装置は、上方
から清浄化されたエアをダウンフローするクリーンルー
ム内に設置されて使用されるため、この処理装置を構成
する搬入搬出機構及び処理機構ユニット内は比較的低湿
度の雰囲気となっており、しかも、被処理体であるLC
D基板(以下単に基板という)は電気伝導率の点からガ
ラスである関係上、基板は処理中に帯電し易い状態にあ
る。Since the processing apparatus in the above manufacturing process is installed and used in a clean room in which purified air is downflowed from above, the inside of the loading / unloading mechanism and the processing mechanism unit constituting this processing apparatus are compared. LC which is an object to be processed in a relatively low humidity atmosphere
Since the D substrate (hereinafter simply referred to as the substrate) is glass in terms of electric conductivity, the substrate is easily charged during the processing.
【0004】[0004]
【発明が解決しようとする課題】しかしながら、基板が
帯電されて静電気が生じると、基板の表面に微細塵埃が
付着してしまい、製品歩留りの低下をきたすばかりか、
基板汚染(コンタミネーション)が生じるという問題が
あった。また、基板に帯電された静電気により基板の搬
送中に放電が生じ、この放電によって基板表面に形成さ
れた素子が破壊されたり、センサ類の精密機器類が誤動
作するなどの問題もあった。更には、静電気によって基
板が載置台等に吸着して、基板の受渡しの際に基板の位
置がずれたり、割れたり、落下するという虞れもあり、
基板の連続処理に支障をきたすという問題もあった。However, when the substrate is charged and static electricity is generated, fine dust adheres to the surface of the substrate, which not only lowers the product yield, but also
There is a problem that substrate contamination occurs. In addition, there is a problem in that the static electricity charged on the substrate causes discharge during the transportation of the substrate, the element formed on the substrate surface is destroyed by the discharge, and precision instruments such as sensors malfunction. Furthermore, there is a risk that the substrate may be attracted to the mounting table or the like by static electricity, and the substrate may be displaced, broken, or dropped when the substrate is delivered.
There is also a problem that it interferes with the continuous processing of the substrate.
【0005】この発明は上記事情に鑑みなされたもので
あり、その目的は、基板を載置する載置台と基板との接
触する面積を少なくして載置台から基板を搬送する際の
剥離帯電現象を減少させ、微細塵埃の付着を防止しする
とともに、放電による素子の破壊等を防止して、製品歩
留りの向上を図れるようにし、また基板の受渡しの際の
基板の位置ずれ、破損、落下を防止するとともに、均一
な熱処理を行うことのできる熱処理装置と熱処理方法を
提供することにある。The present invention has been made in view of the above circumstances, and an object thereof is a peeling electrification phenomenon when a substrate is conveyed from a mounting table by reducing a contact area between the mounting table on which the substrate is mounted and the substrate. To prevent the adhesion of fine dust and to prevent the destruction of elements due to electric discharge to improve the product yield, and also to prevent the misalignment, damage, and drop of the board during the delivery of the board. An object of the present invention is to provide a heat treatment apparatus and a heat treatment method capable of preventing the heat treatment and performing uniform heat treatment.
【0006】[0006]
【課題を解決するための手段】請求項1の発明は、被処
理体を載置しこの被処理体の温度を制御する熱処理装置
において、被処理体を載置する載置台と、この載置台を
介して被処理体に熱を供給する発熱体と、被処理体を支
持する支持手段とを具備し、前記載置台の表面を粗面で
構成したことを特徴とする。According to a first aspect of the present invention, in a heat treatment apparatus on which a target object is placed and the temperature of the target object is controlled, a mounting table on which the target object is mounted, and the mounting table. It is characterized in that it comprises a heating element for supplying heat to the object to be processed through the above, and a supporting means for supporting the object to be processed, and the surface of the mounting table is constituted by a rough surface.
【0007】請求項2の発明は、被処理体を載置しこの
被処理体の温度を制御する熱処理装置において、被処理
体を載置する載置台と、この載置台を介して被処理体に
熱を供給する発熱体と、被処理体を支持する支持手段と
を具備し、前記載置台の表面にタフラム処理を施したこ
とを特徴とする。According to a second aspect of the present invention, in a heat treatment apparatus that mounts an object to be processed and controls the temperature of the object to be processed, a mounting table on which the object to be processed is mounted, and an object to be processed through the mounting table. It is characterized in that it is provided with a heating element for supplying heat to the substrate and a supporting means for supporting the object to be treated, and that the surface of the mounting table is subjected to a tough lam treatment.
【0008】請求項3の発明は、被処理体を載置しこの
被処理体の温度を制御する熱処理装置において、被処理
体を載置する載置台と、この載置台を介して被処理体に
熱を供給する発熱体と、被処理体を支持する支持手段と
を具備し、前記載置台の表面に溝を設け、前記載置台の
表面と被処理体との接触面積を少なくしたことを特徴と
する。According to a third aspect of the present invention, in a heat treatment apparatus that mounts an object to be processed and controls the temperature of the object to be processed, a mounting table on which the object to be processed is mounted, and an object to be processed through the mounting table. A heating element for supplying heat to the object and a supporting means for supporting the object to be processed, and a groove is provided on the surface of the mounting table to reduce the contact area between the surface of the mounting table and the object to be processed. Characterize.
【0009】請求項4の発明は、被処理体を載置しこの
被処理体の温度を制御するに際して、被処理体を載置す
る載置台と、この載置台を介して被処理体に熱を供給す
る発熱体と、被処理体を支持する支持体とによって、前
記載置台の表面と被処理体との接触面積を少なくすると
ともに、均一に熱処理を行うことを特徴とする。According to a fourth aspect of the present invention, when the object to be processed is mounted and the temperature of the object to be processed is controlled, the mounting table on which the object to be processed is mounted, and the object to be processed are heated via the mounting table. It is characterized in that the contact area between the surface of the mounting table and the object to be treated is reduced and the heat treatment is performed uniformly by the heating element for supplying the heat treatment and the support for supporting the object to be treated.
【0010】[0010]
【作用】本発明によれば、載置台の表面を粗面で構成
し、或いはタフラム処理を施し、また或いは溝を設け、
被処理体と載置台との接触面積を減らすことにより、剥
離帯電とによる静電気の発生を防止することができる。According to the present invention, the surface of the mounting table is made rough, or toughened, or provided with a groove.
By reducing the contact area between the object to be processed and the mounting table, it is possible to prevent generation of static electricity due to peeling charging.
【0011】[0011]
【実施例】以下に、この発明の実施例を図面を用いて詳
細に説明する。このような処理を行う場合、図1に示す
処理システムが使用されている。このシステムは、被処
理体としての基板Gを搬入・搬出するローダ部40と、
基板Gをブラシ洗浄するブラシ洗浄装置42と、基板G
を高圧ジェット水で洗浄するジェット水洗浄装置44
と、基板Gの表面を疎水化処理するアドヒージョン処理
装置46と、基板Gを所定温度に冷却する冷却処理装置
48と、基板Gの表面にレジスト液を塗布するレジスト
塗布装置50と、レジスト液塗布の前後で基板Gを加熱
してプリベーク又はポストベークを行う加熱処理装置5
2及び基板Gの周縁部のレジストを除去するレジスト除
去装置54と、現像装置55などを集合化して作業効率
の向上を図っている。Embodiments of the present invention will be described in detail below with reference to the drawings. When performing such processing, the processing system shown in FIG. 1 is used. This system includes a loader section 40 for loading and unloading a substrate G as an object to be processed,
A brush cleaning device 42 for cleaning the substrate G with a brush;
Water washing device 44 for washing water with high pressure jet water
An adhesion treatment device 46 for hydrophobicizing the surface of the substrate G, a cooling treatment device 48 for cooling the substrate G to a predetermined temperature, a resist coating device 50 for coating a resist liquid on the surface of the substrate G, and a resist liquid coating device. Heat treatment apparatus 5 for pre-baking or post-baking by heating the substrate G before and after
2 and the resist removing device 54 for removing the resist on the peripheral portion of the substrate G, the developing device 55 and the like are assembled to improve the work efficiency.
【0012】また各処理装置を多段に積層して、例えば
レジスト処理装置50を上下二段に配置して(図示せ
ず)、設置面積を少なくしクリーンルーム内のスペース
の有効利用を図っている。そして処理システムの上部に
はフィルターを設け処理システム内の各処理装置及び基
板Gへのパーティクルの付着を防止している。Further, the respective processing units are stacked in multiple stages, for example, the resist processing units 50 are arranged in upper and lower two stages (not shown) to reduce the installation area and effectively use the space in the clean room. A filter is provided above the processing system to prevent particles from adhering to each processing device and substrate G in the processing system.
【0013】上記のように構成される処理システムの中
央部には、長手方向に沿って基板搬送路56が設けら
れ、この基板搬送路56は中央のエクステンション部5
7で分割されている。このエクステンション部57は取
り外し可能で、処理システムの保守を容易にする効果が
ある。前記基板搬送路56に各装置40〜54が正面を
向けて配置され、各装置40〜54との間で基板Gの受
け渡しを行う基板搬送機構58が基板搬送路56に沿っ
て移動自在に設けられている。この基板搬送機構58
は、真空吸着などによって基板Gを保持するためのアー
ム59を備えている。アーム59は上下に例えば2本配
設されており、支持基部がコの字形二重構造に設けら
れ、移動機構によりそれぞれ独立に各装置40〜54の
基板載置位置まで移動できるようになっている。A substrate transfer path 56 is provided along the longitudinal direction in the central portion of the processing system configured as described above, and the substrate transfer path 56 has the central extension portion 5.
Divided by 7. This extension part 57 is removable and has the effect of facilitating maintenance of the processing system. The devices 40 to 54 are arranged on the substrate transfer path 56 with their front sides facing each other, and a substrate transfer mechanism 58 for transferring the substrate G to and from the devices 40 to 54 is movably provided along the substrate transfer path 56. Has been. This substrate transfer mechanism 58
Has an arm 59 for holding the substrate G by vacuum suction or the like. For example, two arms 59 are arranged above and below, the support base is provided in a U-shaped double structure, and it can be independently moved to the substrate mounting position of each of the devices 40 to 54 by the moving mechanism. There is.
【0014】上記レジスト塗布現像装置は、例えば、ロ
ーダ部40に設けられた処理前の基板Gを収納した図示
省略のカセットから基板Gを1枚ずつ取り出して、順
に、ブラシ洗浄装置42、ジェット水洗浄装置44、ア
ドヒージョン処理装置46、冷却処理装置48、レジス
ト塗布装置50、レジスト除去装置54、プリベークを
行う加熱処理装置52、図示省略の露光装置、現像装置
55、ポストベークを行う加熱処理装置52に搬送して
各処理を行い、処理済みの基板Gをローダ部40に設け
られた図示省略のカセットに収納する。In the resist coating and developing apparatus, for example, the substrate G is taken out one by one from a cassette (not shown), which stores the unprocessed substrate G provided in the loader section 40, and the brush cleaning device 42 and the jet water are sequentially provided. Cleaning device 44, adhesion processing device 46, cooling processing device 48, resist coating device 50, resist removing device 54, heat treatment device 52 for pre-baking, exposure device (not shown), developing device 55, heat treatment device 52 for post-baking. The processed substrate G is transported to the substrate and processed, and the processed substrate G is stored in a cassette (not shown) provided in the loader unit 40.
【0015】なお上記レジスト塗布現像装置において、
隣り合うブラシ洗浄装置42とジェット水洗浄装置4
4、及びレジスト塗布装置50とレジスト除去装置54
間の基板Gの搬送は、基板搬送路56を移動する基板搬
送機構58によらず、隣り合った処理装置間で個別に搬
送機構を持つため、スループットを上げ作業効率を高め
るとともに、基板搬送機構58による搬送途中の基板G
の破損及び基板搬送路56等の汚染防止にも著しい効果
がある。In the above resist coating and developing apparatus,
Adjacent brush cleaning device 42 and jet water cleaning device 4
4, and resist coating device 50 and resist removing device 54
Since the substrate G is transferred between the adjacent processing apparatuses independently of the substrate transfer mechanism 58 that moves along the substrate transfer path 56, throughput is increased and work efficiency is increased, and the substrate transfer mechanism is also increased. Substrate G being transferred by 58
It is also very effective in preventing damage to the substrate and preventing contamination of the substrate transport path 56 and the like.
【0016】次に、この発明の処理装置を図1に示した
LCD基板のレジスト塗布現像装置に使用される加熱処
理装置に適用した場合について説明する。図2はこの発
明の一実施例の加熱処理装置の概略斜視図、図3及び図
4は図2の加熱処理装置の断面図、図5は図2の加熱処
理装置の要部断面図が示されている。Next, the case where the processing apparatus of the present invention is applied to the heat processing apparatus used in the resist coating and developing apparatus for the LCD substrate shown in FIG. 1 will be described. 2 is a schematic perspective view of a heat treatment apparatus according to an embodiment of the present invention, FIGS. 3 and 4 are cross-sectional views of the heat treatment apparatus of FIG. 2, and FIG. 5 is a cross-sectional view of essential parts of the heat treatment apparatus of FIG. Has been done.
【0017】加熱処理装置52は、基板搬送路56側に
面して開口部52Aを有する複数の加熱処理装置52が
多段に積み重なった1つのブロック体として設けられ、
かつ複数のブロックが並設されている。The heat treatment device 52 is provided as a block body in which a plurality of heat treatment devices 52 facing the substrate transport path 56 and having an opening 52A are stacked in multiple stages.
And a plurality of blocks are arranged in parallel.
【0018】そして、各加熱処理装置52は、例えば図
2、図3及び図4に示すように、基板Gを載置する載置
台60と、この載置台60を介して基板Gに熱を供給す
るヒータを内蔵した発熱体62と、基板Gの上方に処理
空間64を形成すべく配置されると共に加熱処理時に発
生するガスを排気するカバー部材66と、載置台60及
び発熱体62に形成された複数の貫通口68を上下方向
に挿通して基板Gを載置台60の上方で受け渡しする支
持ピン70とで主要部が構成されている。Then, each heat treatment apparatus 52 supplies heat to the substrate G via the mounting table 60 on which the substrate G is mounted and the mounting table 60, as shown in FIGS. 2, 3 and 4, for example. A heating element 62 having a built-in heater, a cover member 66 arranged to form a processing space 64 above the substrate G and exhausting gas generated during the heat treatment, a mounting table 60 and the heating element 62. A main portion is configured by the support pins 70 that pass the substrate G above the mounting table 60 by vertically inserting the plurality of through holes 68.
【0019】この場合、載置台60は熱伝導性の良好な
矩形状のアルミニウム合金製の板にて形成されており、
酸化アルミ皮膜によるタフラム処理を施し、溝71を設
けることによってこの載置台60の表面は粗面に構成さ
れる。一方、発熱体62は、載置台60と大体同じ平面
寸法のアルミニウム合金製の板の内部にヒータを埋設し
て構成されている。In this case, the mounting table 60 is formed of a rectangular aluminum alloy plate having good thermal conductivity,
The surface of the mounting table 60 is roughened by performing the tough ram treatment with the aluminum oxide film and providing the groove 71. On the other hand, the heating element 62 is configured by embedding a heater inside a plate made of an aluminum alloy having substantially the same plane size as the mounting table 60.
【0020】図3に示す加熱処理装置52においては、
支持ピン70側を固定し、載置台60及び発熱体62を
昇降シリンダ72のピストン74にて移動可能にして、
支持ピン70を載置台60上に出没させるようにしてい
る。一方、図4に示す加熱処理装置52においては、載
置台60及び発熱体62を固定し、支持ピン70をシリ
ンダ76のピストン78に連結して載置台60上に出没
可能としている。なお、図4において、載置台60の外
周部には筒状のシャッタ80が昇降可能に配置されてお
り、このシャッタ80は、シャッタ昇降用シリンダ82
のピストン84に連結されて、昇降移動によって処理空
間64の容積を調節できるようになっている。In the heat treatment device 52 shown in FIG.
By fixing the support pin 70 side, the mounting table 60 and the heating element 62 can be moved by the piston 74 of the lifting cylinder 72,
The support pins 70 are made to appear and disappear on the mounting table 60. On the other hand, in the heat treatment device 52 shown in FIG. 4, the mounting table 60 and the heating element 62 are fixed, and the support pin 70 is connected to the piston 78 of the cylinder 76 so that the mounting table 60 can be retracted. Note that, in FIG. 4, a cylindrical shutter 80 is arranged so as to be able to move up and down on the outer peripheral portion of the mounting table 60. This shutter 80 includes a shutter raising / lowering cylinder 82.
Of the processing space 64 is connected to the piston 84 of FIG.
【0021】そして図6に示すように、載置台60の上
面には基板Gと載置台60との接触を避けるためのスペ
ーサ85が、基板Gの載置位置の周縁に沿って設けられ
ている。このスペーサ85は扁平小判形のセラミックス
製の板片からなり、その一端部に形成した貫通孔に取付
ねじ86を挿通し、これを載置台60の上面に刻設され
たねじ孔87にねじ込むことによって載置台60上に装
着される。なお図6では第二実施例として、溝71を同
心円状に設けた例を示した。As shown in FIG. 6, spacers 85 for avoiding contact between the substrate G and the mounting table 60 are provided on the upper surface of the mounting table 60 along the periphery of the mounting position of the substrate G. . The spacer 85 is made of a flat oval ceramic plate piece, and a mounting screw 86 is inserted into a through hole formed at one end of the spacer 85, and the mounting screw 86 is screwed into a screw hole 87 formed on the upper surface of the mounting table 60. It is mounted on the mounting table 60 by. Note that FIG. 6 shows an example in which the grooves 71 are concentrically provided as a second embodiment.
【0022】次に、上記のように構成された加熱処理装
置52の動作について説明する。まず、図2に示すよう
に、搬送機構58の搬送アーム59によって載置台60
の上方に搬送された基板Gは上昇した支持ピン70に受
け渡され、支持ピン70の下降によって載置台60の上
面のスペーサ85上に載置される。次に、図示省略のシ
ャッタが駆動されて処理部と外部が区画される。処理部
内では、発熱体62からの熱が載置台60に伝達され、
載置台60の上面から基板Gに伝達される。この場合の
発熱体62から載置台60への熱伝達は、熱伝導性の良
いアルミニウム合金同士の直接接触による熱伝導によっ
て達成されるので極めて熱伝達効率が良く、しかも、そ
れが載置台60の下面と発熱体62の上面との接触面全
体を通して成されるので、載置台60全体が均一に加熱
される。したがって、発熱体62から載置台60を介し
て基板Gに伝達される熱の温度分布は均一となり、基板
Gが均一に加熱処理される。なお、載置台60を装着す
る際その下面にシリコングリースなどの熱の良導体を塗
るなどして、載置台60と発熱体62との間に熱の良導
体を介在させるようにしてもよい。Next, the operation of the heat treatment device 52 configured as described above will be described. First, as shown in FIG. 2, the mounting table 60 is moved by the transfer arm 59 of the transfer mechanism 58.
The substrate G conveyed above is transferred to the raised support pins 70 and is placed on the spacers 85 on the upper surface of the mounting table 60 by the lowering of the support pins 70. Next, a shutter (not shown) is driven to partition the processing unit from the outside. In the processing section, heat from the heating element 62 is transferred to the mounting table 60,
It is transmitted from the upper surface of the mounting table 60 to the substrate G. In this case, the heat transfer from the heating element 62 to the mounting table 60 is achieved by the heat conduction by direct contact between the aluminum alloys having good thermal conductivity, so that the heat transfer efficiency is extremely good, and the heat transfer efficiency of the mounting table 60 is high. Since it is formed through the entire contact surface between the lower surface and the upper surface of the heating element 62, the entire mounting table 60 is uniformly heated. Therefore, the temperature distribution of the heat transferred from the heating element 62 to the substrate G via the mounting table 60 becomes uniform, and the substrate G is uniformly heat-treated. When mounting the mounting table 60, a good thermal conductor such as silicon grease may be applied to the lower surface of the mounting table 60 so that a good thermal conductor is interposed between the mounting table 60 and the heating element 62.
【0023】熱処理の終了した基板Gは、支持ピン70
の上昇によって載置台60より離間される。この際、載
置台60の表面が平滑であれば容易に帯電しやすいガラ
スからなる基板Gは、載置台60の表面からの剥離帯電
により静電気をおび、載置台60の表面に吸着しようと
し、その結果基板Gの位置ずれ、破損、落下という可能
性もあるが、載置台60の表面に温度の均一性を保つ範
囲内で溝71を設けたことにより、基板Gは支持ピン7
0の上昇によって静電気をおびることなく、載置台60
より離間することができる。The substrate G that has been heat-treated has support pins 70.
Is lifted away from the mounting table 60. At this time, if the surface of the mounting table 60 is smooth, the substrate G made of glass that is easily charged is charged with static electricity due to peeling charging from the surface of the mounting table 60, and tends to be attracted to the surface of the mounting table 60. As a result, the substrate G may be displaced, damaged, or dropped, but since the groove 71 is provided on the surface of the mounting table 60 within the range of maintaining the temperature uniformity, the substrate G is supported by the support pins 7.
The mounting table 60 does not become charged with static electricity due to the rise of 0.
Can be more separated.
【0024】溝71は第一実施例及び第二実施例に図示
した平行線状、同心円状に限らず、載置台60の表面に
温度の均一性を保つ範囲内であれば、螺旋状等どのよう
な形態でもかまわない。また表面を粗面に構成すること
が目的であるため、載置台60の表面に温度の均一性を
保つ範囲内であれば、表面の形状は穴を設けてもよい
し、突起物を設けても、また他の形状であっても構わな
い。The groove 71 is not limited to the parallel line shape and the concentric circle shape shown in the first and second embodiments, but may be a spiral shape or the like as long as the temperature of the surface of the mounting table 60 is kept uniform. It does not matter even if it is a form. Further, since the purpose is to make the surface rough, the shape of the surface may be provided with holes or projections may be provided as long as the surface of the mounting table 60 maintains the temperature uniformity. Alternatively, it may have another shape.
【0025】また、貫通口68と支持ピン70の隙間よ
り、図示しないガス供給源より例えばN2ガス等を供給
することも、剥離帯電による静電気の発生を防止する上
で効果がある。更に加熱処理装置52にイオン供給源を
設けて、カバー部材66内に設置された、図示しないエ
ミッターバーの下面に突出する電極から、イオンを載置
台60上に支持ピン70によって支持された基板Gに照
射するようにしてもよい。特に、このような加熱処理装
置52の場合、帯電し易くなり、加熱処理後、載置台6
0から支持ピン70により基板Gを支持して持ち上げる
際に、基板Gが載置台60に吸引されていると傾いた
り、また、放電したりので、このように構成することに
より、処理される基板Gの処理の前後に帯電される静電
気を除去することも静電気の発生を防止する上で効果が
ある。Further, supplying N2 gas or the like from a gas supply source (not shown) through the gap between the through-hole 68 and the support pin 70 is also effective in preventing generation of static electricity due to peeling charging. Further, an ion supply source is provided in the heat treatment device 52, and ions are ion-supported from the electrode protruding from the lower surface of the emitter bar (not shown) installed in the cover member 66 on the mounting table 60 by the support pins 70. You may make it irradiate. In particular, in the case of such a heat treatment device 52, charging becomes easier, and after the heat treatment, the mounting table 6
When the substrate G is supported and lifted by the support pins 70 from 0, the substrate G tilts or is discharged when being sucked by the mounting table 60, and thus the substrate to be processed is configured by such a configuration. Removing static electricity charged before and after the G treatment is also effective in preventing static electricity from occurring.
【0026】以上の実施例では被処理体がLCD基板の
場合について説明したが、被処理体は必ずしもLCD基
板に限られるものではなく、例えば半導体基板について
同様に加熱処理するものについても適用できるものであ
る。In the above embodiments, the case where the object to be processed is the LCD substrate has been described, but the object to be processed is not necessarily limited to the LCD substrate, and can be applied to, for example, a semiconductor substrate which is similarly heat-treated. Is.
【0027】また、上記実施例では処理装置をレジスト
塗布現像装置に適用した場合について説明したが、これ
以外にも、例えばエッチング液塗布処理や磁性液塗布処
理を行う装置にも適用できることは勿論である。In the above embodiment, the case where the processing apparatus is applied to the resist coating / developing apparatus has been described, but it is needless to say that the present invention can be applied to an apparatus for performing etching liquid coating processing or magnetic liquid coating processing, for example. is there.
【0028】[0028]
【発明の効果】本発明によれば、載置台の表面を粗面で
構成し、或いはタフラム処理を施し、また或いは溝を設
け、被処理体と載置台との接触面積を減らすことによ
り、静電気の発生を防止し、載置台上に載置されている
被処理体を搬送する際の、剥離帯電現象による被処理体
の破損、破壊を起こさずに、均一に熱処理を行うことが
できる。また被処理体にパーティクルが付着することも
防止することができる。According to the present invention, the surface of the mounting table is made rough, or the tough ram treatment is performed, or the groove is provided, and the contact area between the object to be processed and the mounting table is reduced. It is possible to prevent the occurrence of heat generation, and to uniformly perform the heat treatment without causing damage or destruction of the object to be processed due to the peeling electrification phenomenon when the object to be processed placed on the mounting table is conveyed. It is also possible to prevent particles from adhering to the object to be processed.
【図1】この発明の処理装置を適用する処理システムを
示す斜視図である。FIG. 1 is a perspective view showing a processing system to which a processing apparatus of the present invention is applied.
【図2】この発明の処理装置の一実施例の概略斜視図で
ある。FIG. 2 is a schematic perspective view of an embodiment of the processing apparatus of the present invention.
【図3】図2の加熱処理装置の断面図である。3 is a cross-sectional view of the heat treatment apparatus of FIG.
【図4】図2の加熱処理装置の断面図である。FIG. 4 is a sectional view of the heat treatment apparatus of FIG.
【図5】この発明の処理装置の要部断面図である。FIG. 5 is a cross-sectional view of essential parts of the processing apparatus of the present invention.
【図6】この発明の処理装置の他の実施例を示す要部平
面図である。FIG. 6 is a plan view of an essential part showing another embodiment of the processing apparatus of the present invention.
G 基板 52 加熱処理装置 59 アーム 60 載置台 62 発熱体 66 カバー部材 68 貫通口 70 支持ピン 71 溝 85 スペーサ G substrate 52 heat treatment device 59 arm 60 mounting table 62 heating element 66 cover member 68 through hole 70 support pin 71 groove 85 spacer
Claims (4)
制御する熱処理装置において、被処理体を載置する載置
台と、この載置台を介して被処理体に熱を供給する発熱
体と、被処理体を支持する支持手段とを具備し、前記載
置台の表面を粗面で構成したことを特徴とする熱処理装
置。1. In a heat treatment apparatus for mounting an object to be processed and controlling the temperature of the object to be processed, a mounting table on which the object to be processed is mounted, and heat is supplied to the object to be processed through the mounting table. A heat treatment apparatus comprising a heating element and a supporting means for supporting an object to be processed, wherein the surface of the mounting table is a rough surface.
制御する熱処理装置において、被処理体を載置する載置
台と、この載置台を介して被処理体に熱を供給する発熱
体と、被処理体を支持する支持手段とを具備し、前記載
置台の表面にタフラム処理を施したことを特徴とする熱
処理装置。2. A heat treatment apparatus which mounts an object to be processed and controls the temperature of the object to be processed, and a mounting table on which the object to be processed is mounted, and heat is supplied to the object to be processed through the mounting table. A heat treatment apparatus comprising a heating element and a supporting means for supporting an object to be processed, wherein the surface of the mounting table is subjected to a tough lam treatment.
制御する熱処理装置において、被処理体を載置する載置
台と、この載置台を介して被処理体に熱を供給する発熱
体と、被処理体を支持する支持手段とを具備し、前記載
置台の表面に溝を設け、前記載置台の表面と被処理体と
の接触面積を少なくしたことを特徴とする熱処理装置。3. A heat treatment apparatus which mounts an object to be processed and controls the temperature of the object to be processed, and a mounting table on which the object to be processed is mounted, and heat is supplied to the object to be processed through the mounting table. A heat treatment apparatus comprising a heating element and a support means for supporting the object to be processed, wherein a groove is provided on the surface of the table to reduce the contact area between the surface of the table and the object to be processed. .
制御するに際して、被処理体を載置する載置台と、この
載置台を介して被処理体に熱を供給する発熱体と、被処
理体を支持する支持体とによって、前記載置台の表面と
被処理体との接触面積を少なくするとともに、均一に熱
処理を行うことを特徴とする熱処理方法。4. A mounting table on which the object to be processed is mounted when mounting the object to be processed and controlling the temperature of the object to be processed, and a heating element for supplying heat to the object to be processed through the mounting table. And a support for supporting the object to be processed, wherein the contact area between the surface of the mounting table and the object to be processed is reduced and the heat treatment is performed uniformly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35298593A JP3158829B2 (en) | 1993-12-31 | 1993-12-31 | Heat treatment apparatus and heat treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35298593A JP3158829B2 (en) | 1993-12-31 | 1993-12-31 | Heat treatment apparatus and heat treatment method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07201718A true JPH07201718A (en) | 1995-08-04 |
| JP3158829B2 JP3158829B2 (en) | 2001-04-23 |
Family
ID=18427792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35298593A Expired - Fee Related JP3158829B2 (en) | 1993-12-31 | 1993-12-31 | Heat treatment apparatus and heat treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3158829B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11162695A (en) * | 1997-11-27 | 1999-06-18 | Tokyo Ohka Kogyo Co Ltd | Plasma processing device |
| JP2000100807A (en) * | 1998-09-21 | 2000-04-07 | Dainippon Screen Mfg Co Ltd | Substrate heat treatment equipment |
| US6051815A (en) * | 1998-03-05 | 2000-04-18 | Nec Corporation | Apparatus for heat-treating substrate and method for separating the substrate from the apparatus |
| WO2001011923A1 (en) * | 1999-08-09 | 2001-02-15 | Ibiden Co., Ltd. | Ceramic heater |
| WO2001011922A1 (en) * | 1999-08-09 | 2001-02-15 | Ibiden Co., Ltd. | Ceramic heater |
| US6835916B2 (en) | 1999-08-09 | 2004-12-28 | Ibiden, Co., Ltd | Ceramic heater |
| JP2007515077A (en) * | 2003-12-17 | 2007-06-07 | 東京エレクトロン株式会社 | Chemical oxide removal processing system and method |
-
1993
- 1993-12-31 JP JP35298593A patent/JP3158829B2/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11162695A (en) * | 1997-11-27 | 1999-06-18 | Tokyo Ohka Kogyo Co Ltd | Plasma processing device |
| EP0940843A3 (en) * | 1998-03-05 | 2002-10-23 | Nec Corporation | Apparatus for heat-treating substrate and method for separating the substrate from the apparatus |
| US6051815A (en) * | 1998-03-05 | 2000-04-18 | Nec Corporation | Apparatus for heat-treating substrate and method for separating the substrate from the apparatus |
| JP2000100807A (en) * | 1998-09-21 | 2000-04-07 | Dainippon Screen Mfg Co Ltd | Substrate heat treatment equipment |
| WO2001011923A1 (en) * | 1999-08-09 | 2001-02-15 | Ibiden Co., Ltd. | Ceramic heater |
| US6465763B1 (en) | 1999-08-09 | 2002-10-15 | Ibiden Co., Ltd. | Ceramic heater |
| WO2001011922A1 (en) * | 1999-08-09 | 2001-02-15 | Ibiden Co., Ltd. | Ceramic heater |
| US6710307B2 (en) | 1999-08-09 | 2004-03-23 | Ibiden Co., Ltd. | Ceramic heater |
| US6835916B2 (en) | 1999-08-09 | 2004-12-28 | Ibiden, Co., Ltd | Ceramic heater |
| US6861620B2 (en) | 1999-08-09 | 2005-03-01 | Ibiden Co., Ltd. | Ceramic heater |
| US8409399B2 (en) | 2003-03-17 | 2013-04-02 | Tokyo Electron Limited | Reduced maintenance chemical oxide removal (COR) processing system |
| JP2007515077A (en) * | 2003-12-17 | 2007-06-07 | 東京エレクトロン株式会社 | Chemical oxide removal processing system and method |
| JP2011176365A (en) * | 2003-12-17 | 2011-09-08 | Tokyo Electron Ltd | Chemical oxide removal processing system and method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3158829B2 (en) | 2001-04-23 |
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