JPH07202152A - Solid-state imaging device - Google Patents

Solid-state imaging device

Info

Publication number
JPH07202152A
JPH07202152A JP5349016A JP34901693A JPH07202152A JP H07202152 A JPH07202152 A JP H07202152A JP 5349016 A JP5349016 A JP 5349016A JP 34901693 A JP34901693 A JP 34901693A JP H07202152 A JPH07202152 A JP H07202152A
Authority
JP
Japan
Prior art keywords
solid
imaging device
state imaging
chip
image pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5349016A
Other languages
Japanese (ja)
Inventor
Hideo Yamamoto
秀男 山本
Yoshiro Nishimura
芳郎 西村
Hiroshi Suzushima
浩 鈴島
Takashi Nakayama
高志 中山
Kazue Tanaka
和恵 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Olympus Corp
Original Assignee
Olympus Optical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Olympus Optical Co Ltd filed Critical Olympus Optical Co Ltd
Priority to JP5349016A priority Critical patent/JPH07202152A/en
Publication of JPH07202152A publication Critical patent/JPH07202152A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/804Containers or encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/806Optical elements or arrangements associated with the image sensors
    • H10F39/8063Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

(57)【要約】 【目的】 マイクロレンズを備えた固体撮像素子チップ
でもマイクロレンズを備えないものと同程度の小型実装
化できるようにした固体撮像装置を提供する。 【構成】 マイクロレンズ3を備えた受光エリア2を有
する固体撮像素子チップ1の受光エリア2のみに対し、
下面縁部に枠部4aを一体的に形成した透明材料からな
る封止部材4を配置し、マイクロレンズ3の表面と封止
部材4の下面の間に5μ以上の空間を形成して気密封止
し、小型実装したマイクロレンズ付の固体撮像装置を構
成する。
(57) [Abstract] [PROBLEMS] To provide a solid-state image pickup device that can be mounted in a small size as small as a solid-state image pickup element chip including a microlens, which does not include the microlens. [Structure] Only for the light receiving area 2 of the solid-state imaging device chip 1 having the light receiving area 2 including the microlens 3,
The sealing member 4 made of a transparent material integrally formed with the frame portion 4a at the lower surface edge is arranged, and a space of 5 μm or more is formed between the surface of the microlens 3 and the lower surface of the sealing member 4 to hermetically seal. Then, a solid-state imaging device with a microlens mounted in a small size is constructed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、固体撮像素子チップ
を実装した固体撮像装置、特にオンチップマイクロレン
ズを備えた固体撮像素子チップを実装した固体撮像装置
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device having a solid-state image pickup element chip mounted thereon, and more particularly to a solid-state image pickup device having a solid-state image pickup element chip provided with an on-chip microlens.

【0002】[0002]

【従来の技術】従来、マイクロレンズ付きの固体撮像素
子チップは、次のように実装が施されている。すなわ
ち、図8又は図9に示すように、受光エリアにマイクロ
レンズ102 を設けた固体撮像素子チップ101 を、セラミ
ックなどからなるパッケージ103又は基板104 にダイボ
ンドし、ボンディングワイヤ105 を用いて固体撮像素子
チップ101 とパッケージ103 又は基板104 との所定の接
続を行ったのち、パッケージ103 の縁部に設けた段部 1
03a又は封止枠106 を用いて、素子チップ101 の表面と
の間に空間を設けて、ガラスリッド107 を接着して気密
封止し、固体撮像装置を構成している。なお図8におい
て、108 はリードを示している。
2. Description of the Related Art Conventionally, a solid-state image pickup device chip with a microlens is mounted as follows. That is, as shown in FIG. 8 or FIG. 9, a solid-state image sensor chip 101 having a microlens 102 provided in a light receiving area is die-bonded to a package 103 or a substrate 104 made of ceramic or the like, and a bonding wire 105 is used to form the solid-state image sensor. After a predetermined connection between the chip 101 and the package 103 or the substrate 104, the stepped portion 1 provided at the edge of the package 103
A space is provided between the element chip 101 and the surface of the element chip 101 by using the 03a or the sealing frame 106, and the glass lid 107 is adhered and hermetically sealed to form a solid-state imaging device. In FIG. 8, 108 indicates a lead.

【0003】[0003]

【発明が解決しようとする課題】ところで、マイクロレ
ンズを備えた受光エリアを有する固体撮像素子チップに
おいては、受光エリア表面に直接、保護ガラス又はフィ
ルタ,レンズ,プリズム等の光学部品を接着すると、接
着剤の屈折率によりマイクロレンズの集光能力が低下し
てしまうという問題を生じるため、かかる固体撮像素子
チップを実装する場合は、上記のように、固体撮像素子
チップ全体を気密封止せざるを得ない。したがって、固
体撮像素子チップ全体の気密封止を行うと実装形状が大
きくなってしまい、小型実装、特に電子内視鏡の先端部
などの微小部分に配置される固体撮像装置など、超小型
実装を必要とする分野への適用が困難であった。
By the way, in a solid-state image pickup device chip having a light-receiving area provided with a microlens, if a protective glass or an optical component such as a filter, a lens or a prism is directly adhered to the surface of the light-receiving area, the adhesion will occur. Since there is a problem that the light collecting ability of the microlens is deteriorated due to the refractive index of the agent, when mounting such a solid-state imaging device chip, the entire solid-state imaging device chip must be hermetically sealed as described above. Absent. Therefore, if the entire solid-state imaging element chip is hermetically sealed, the mounting shape becomes large, and it is necessary to carry out small-sized mounting, especially ultra-small mounting such as a solid-state imaging device arranged in a minute portion such as the tip of an electronic endoscope. It was difficult to apply it to the required fields.

【0004】また固体撮像素子チップの受光エリアに設
けられるマイクロレンズは、アクリルなどの樹脂で形成
されているため、固体撮像素子チップの作成の際のダイ
シング時の汚れ防止のために、ダイシング時に固体撮像
素子ウェハを保護膜でコートし、ダイシング後に、その
保護膜を剥離するという余分な作業を必要としていた。
Further, since the microlenses provided in the light receiving area of the solid-state image pickup device chip are made of resin such as acrylic resin, the solid-state image pickup device chip is solid-stated at the time of dicing in order to prevent contamination during dicing. The extra work of coating the image sensor wafer with a protective film and peeling the protective film after dicing has been required.

【0005】本発明は、従来のマイクロレンズを備えた
固体撮像素子チップを実装して構成した固体撮像装置に
おける上記問題点を解消するためになされたもので、マ
イクロレンズを備えた固体撮像素子チップでも、マイク
ロレンズを備えない固体撮像素子チップとほぼ同サイズ
で小型実装できるようにした固体撮像装置を提供するこ
とを目的とする。
The present invention has been made in order to solve the above problems in a solid-state image pickup device configured by mounting a conventional solid-state image pickup element chip having a microlens. However, it is an object of the present invention to provide a solid-state image pickup device which has substantially the same size as a solid-state image pickup element chip without a microlens and can be mounted in a small size.

【0006】[0006]

【課題を解決するための手段及び作用】上記問題点を解
決するため、本発明は、オンチップマイクロレンズを備
えた受光エリアを有する固体撮像素子チップの受光エリ
アのみに、透明部材からなる気密封止部を設けて固体撮
像装置を構成するものである。
In order to solve the above problems, the present invention provides an airtight seal made of a transparent member only in the light receiving area of a solid state image pickup device chip having a light receiving area provided with an on-chip microlens. A solid-state imaging device is configured by providing a stop portion.

【0007】このように固体撮像素子チップ表面の受光
エリアのみに透明部材からなる気密封止部を設けたの
で、実装サイズの小型化を図ることができ、特に電子内
視鏡に好適な固体撮像装置が実現できる。また気密封止
部の表面にフィルタ,レンズ,プリズム等の光学部品を
接着することが可能となり、マイクロレンズの集光能力
の低下を伴うことなく実装サイズの小型化を図ることが
できる。また固体撮像素子チップのウェハ状態で、受光
エリアに全チップ一括して気密封止部を設けることが可
能であり、これによりダイシング時の汚れ防止処理が不
要となる。
Since the airtight sealing portion made of a transparent member is provided only in the light-receiving area on the surface of the solid-state image pickup element chip, the mounting size can be reduced, and the solid-state image pickup particularly suitable for an electronic endoscope is possible. The device can be realized. Further, optical parts such as filters, lenses and prisms can be adhered to the surface of the hermetically sealed portion, and the mounting size can be reduced without deteriorating the light collecting ability of the microlenses. Further, in the wafer state of the solid-state imaging device chip, it is possible to collectively provide an airtight sealing portion for all the chips in the light-receiving area, which eliminates the need for a stain prevention process during dicing.

【0008】[0008]

【実施例】次に、実施例について説明する。図1の
(A),(B)は本発明に係る固体撮像装置の第1実施
例を示す概略上面図及びその断面図である。図におい
て、1は固体撮像素子チップで、該固体撮像素子チップ
1の受光エリア2にはマイクロレンズ3が各画素に対応
して設けられている。4はガラス,石英,サファイア,
透明樹脂などの透明材料からなる封止部材で、下面の縁
部には枠部4aが一体的に形成されており、そして、前
記固体撮像素子チップ1の受光エリア2のみを気密封止
し、且つ受光エリア2のマイクロレンズ3の表面と封止
部材4の裏面の間には、干渉縞が生じないように少なく
とも5μm以上の空間が形成されるように、固体撮像素
子チップ1の表面に接着されている。固体撮像素子チッ
プ1の表面への封止部材4の接着方法としては、陽極接
合又は超音波接合を利用すれば接合面積を小さくするこ
とができるが、エポキシ樹脂などの接着剤を用いてもよ
いことは勿論である。なお図1の(A)において、5は
固体撮像素子チップ1の電極を示している。
EXAMPLES Next, examples will be described. 1A and 1B are a schematic top view and a sectional view showing a first embodiment of a solid-state imaging device according to the present invention. In the figure, reference numeral 1 denotes a solid-state image pickup device chip, and a microlens 3 is provided in a light receiving area 2 of the solid-state image pickup device chip 1 corresponding to each pixel. 4 is glass, quartz, sapphire,
A sealing member made of a transparent material such as a transparent resin, a frame portion 4a is integrally formed on an edge portion of a lower surface, and only the light receiving area 2 of the solid-state imaging device chip 1 is hermetically sealed, In addition, between the front surface of the microlens 3 in the light receiving area 2 and the back surface of the sealing member 4, it is adhered to the front surface of the solid-state imaging element chip 1 so that a space of at least 5 μm or more is formed so that interference fringes do not occur. Has been done. As a method for adhering the sealing member 4 to the surface of the solid-state imaging device chip 1, the bonding area can be reduced by utilizing anodic bonding or ultrasonic bonding, but an adhesive such as epoxy resin may be used. Of course. In FIG. 1A, reference numeral 5 denotes an electrode of the solid-state image sensor chip 1.

【0009】このように構成された固体撮像装置は、封
止部材4で固体撮像素子チップの受光エリア2のみを気
密封止しているので、マイクロレンズ3の集光能力低下
を伴うことなく実装サイズの小型化が実現できる。
In the solid-state image pickup device constructed as described above, since only the light receiving area 2 of the solid-state image pickup element chip is hermetically sealed by the sealing member 4, the light-collecting ability of the microlens 3 is not deteriorated. The size can be reduced.

【0010】次に、第2実施例を図2に基づいて説明す
る。この実施例は、封止部材11を透明部材からなる平板
部11aと枠部11bの2部材で構成したものである。この
際、枠部11bはセラミック,ガラス,シリコン等の無機
物又はコバール,42アロイ等の金属を用いて形成しても
よいが、固体撮像素子チップ1の表面に、エポキシ,フ
ェノール,シリコンなどの樹脂を印刷又はフォトリソ技
術でパターン形成してもよい。また透明平板部11aに枠
部11bを陽極接合等で接着したものを、固体撮像素子チ
ップ1の表面に接着するようにしてもよい。
Next, a second embodiment will be described with reference to FIG. In this embodiment, the sealing member 11 is composed of two members, a flat plate portion 11a and a frame portion 11b which are transparent members. At this time, the frame portion 11b may be formed by using an inorganic material such as ceramic, glass, or silicon, or a metal such as Kovar, 42 alloy, or the like, but the surface of the solid-state imaging element chip 1 is made of resin such as epoxy, phenol, or silicon. May be patterned by printing or photolithographic techniques. Alternatively, the transparent flat plate portion 11a to which the frame portion 11b is bonded by anodic bonding or the like may be bonded to the surface of the solid-state imaging element chip 1.

【0011】この実施例では、封止部材を透明平板部と
枠部の2部材で構成しているため、各部材の加工が容易
でコストを低減することができる。
In this embodiment, since the sealing member is composed of two members, the transparent flat plate portion and the frame portion, each member can be easily processed and the cost can be reduced.

【0012】次に、第3実施例を図3に基づいて説明す
る。この実施例は、図1に示した第1実施例と同様に、
マイクロレンズ3を設けた受光エリア2のみを透明封止
部材4で気密封止した固体撮像素子チップ1を、基板21
と直接ダイボンドで接着し、固体撮像素子チップ1の電
極と基板21との電極間をボンディングワイヤ22で接続し
たのち、固体撮像素子チップ1の受光エリア2のみに設
けた封止部材4以外のチップ表面及びボンディングワイ
ヤ22による接続部分を、エポキシ,フェノール,シリコ
ンなどの封止樹脂23で封止して固体撮像装置を構成した
ものである。
Next, a third embodiment will be described with reference to FIG. This embodiment is similar to the first embodiment shown in FIG.
The solid-state imaging device chip 1 in which only the light receiving area 2 provided with the microlens 3 is hermetically sealed by the transparent sealing member 4 is provided on the substrate 21.
After bonding by direct die bonding to the electrodes of the solid-state imaging device chip 1 and the electrodes of the substrate 21 with bonding wires 22, chips other than the sealing member 4 provided only in the light-receiving area 2 of the solid-state imaging device chip 1 A solid-state imaging device is configured by sealing the surface and the connecting portion by the bonding wire 22 with a sealing resin 23 such as epoxy, phenol, or silicon.

【0013】この実施例によれば、固体撮像素子チップ
を基板に接着して構成する固体撮像装置の小型実装を図
ることができる。
According to this embodiment, it is possible to realize a small-sized mounting of the solid-state image pickup device constituted by adhering the solid-state image pickup element chip to the substrate.

【0014】次に、第4実施例を図4に基づいて説明す
る。この実施例は、図3に示した第3実施例の固体撮像
装置における透明封止部材4の表面に、赤外線カットフ
ィルタ,紫外線カットフィルタ,レンズ,プリズム等の
光学部品31を接着剤32で接着して構成したものであり、
この実施例によれば、光学部品を装着して構成した固体
撮像装置の小型実装が可能となる。
Next, a fourth embodiment will be described with reference to FIG. In this embodiment, an optical component 31 such as an infrared cut filter, an ultraviolet cut filter, a lens and a prism is adhered to the surface of the transparent sealing member 4 in the solid-state imaging device of the third embodiment shown in FIG. Is configured as
According to this embodiment, it is possible to mount the solid-state imaging device, which is configured by mounting the optical component, in a small size.

【0015】次に、第5実施例を図5に基づいて説明す
る。この実施例は、下面の縁部に枠部41aを一体的に形
成したプリズム等の光学部品41を、固体撮像素子チップ
1のマイクロレンズ3を備えた受光エリア2のみに対し
て、枠部41aを介して配置し接着する。そして、固体撮
像素子チップ1を、図3に示した第3実施例と同様に、
基板21にダイボンドで接着し、ボンディングワイヤ22で
所定の接続を行ったのち、光学部品41以外のチップ表面
とボンディングワイヤ22の接続部分を封止樹脂23で封止
して、固体撮像装置を構成するものである。なお、この
実施例においても、光学部品41の下面と固体撮像素子チ
ップ1のマイクロレンズ3の表面との間には、5μm以
上の空間が形成されるようになっている。
Next, a fifth embodiment will be described with reference to FIG. In this embodiment, an optical component 41 such as a prism in which a frame portion 41a is integrally formed on an edge portion of a lower surface is provided to the frame portion 41a only for the light receiving area 2 including the microlens 3 of the solid-state image sensor chip 1. Place through and glue. Then, the solid-state image pickup device chip 1 is set in the same manner as in the third embodiment shown in FIG.
After being bonded to the substrate 21 by die bonding and making a predetermined connection with the bonding wire 22, the connection part between the chip surface other than the optical component 41 and the bonding wire 22 is sealed with the sealing resin 23 to form a solid-state imaging device. To do. Also in this embodiment, a space of 5 μm or more is formed between the lower surface of the optical component 41 and the surface of the microlens 3 of the solid-state image sensor chip 1.

【0016】この実施例においては、光学部品自体が封
止部材を兼ねているので、光学部品を備えた固体撮像装
置の一層の小型化並びに薄型化を実現することができ
る。
In this embodiment, since the optical component itself also serves as the sealing member, it is possible to further reduce the size and thickness of the solid-state image pickup device including the optical component.

【0017】次に、第6実施例を図6に基づいて説明す
る。図6において、51は固体撮像素子チップで、該固体
撮像素子チップ51にはチップ表面より凹んで形成された
凹部52が設けられており、この凹部52にはマイクロレン
ズ3を設けた受光エリア2のみが形成されている。そし
て、受光エリア2が形成されている凹部52を覆うように
透明部材からなる平板状封止部材53を、チップ表面に配
置して接着し、固体撮像装置を構成している。この実施
例においても、凹部52に形成されている受光エリア2の
マイクロレンズ3の表面と平板状封止部材(ガラスリッ
ド)53の裏面との間には、5μm以上の空間が形成され
るようになっている。
Next, a sixth embodiment will be described with reference to FIG. In FIG. 6, reference numeral 51 denotes a solid-state image pickup element chip, and the solid-state image pickup element chip 51 is provided with a recessed portion 52 which is recessed from the surface of the chip, and the recessed portion 52 has a light receiving area 2 provided with the microlens 3. Only formed. Then, a flat plate-shaped sealing member 53 made of a transparent member is arranged on the chip surface and bonded so as to cover the concave portion 52 in which the light receiving area 2 is formed, thereby forming a solid-state imaging device. Also in this embodiment, a space of 5 μm or more is formed between the front surface of the microlens 3 in the light receiving area 2 formed in the recess 52 and the back surface of the flat plate-shaped sealing member (glass lid) 53. It has become.

【0018】この実施例によれば、封止部材に枠部を必
要とせず、したがって封止部材のコストを低減できるば
かりでなく、一層の薄型化が可能になる。
According to this embodiment, the frame member is not required for the sealing member, so that not only the cost of the sealing member can be reduced, but also the thickness can be further reduced.

【0019】次に、第7実施例を図7に基づいて説明す
る。この実施例は、図6に示した第6実施例における平
板状封止部材53の変わりに、プリズム等の光学部品31を
封止部材を兼ねさせて固体撮像素子チップ51の凹部52を
覆うように配置して接着し、固体撮像装置を構成するも
のである。
Next, a seventh embodiment will be described with reference to FIG. In this embodiment, instead of the flat plate-shaped sealing member 53 in the sixth embodiment shown in FIG. 6, the optical component 31 such as a prism also serves as a sealing member so as to cover the recess 52 of the solid-state imaging element chip 51. Then, the solid-state imaging device is configured by arranging and adhering.

【0020】この実施例では、光学部品を備えた固体撮
像装置の更に一層の小型化及び薄型化を図ることができ
る。
In this embodiment, it is possible to further reduce the size and thickness of the solid-state image pickup device having the optical component.

【0021】[0021]

【発明の効果】以上実施例に基づいて説明したように、
本発明によれば、固体撮像素子チップ表面のマイクロレ
ンズを備えた受光エリアのみに透明部材からなる気密封
止部を設けたので、実装サイズの小型化を図った固体撮
像装置を得ることができる。また気密封止部の表面に、
受光エリアに対して間接的にプリズム等の光学部品を接
着することができ、マイクロレンズの集光能力の低下を
伴うことなく実装サイズの小型化を図ることができる。
また固体撮像素子チップのウェハ状態で、受光エリアに
全チップ一括して気密封止部を設けることが可能であ
り、これによりダイシング時の汚れ防止処理が不要とな
る等の効果が得られる。
As described above on the basis of the embodiments,
According to the present invention, since the hermetically sealed portion made of the transparent member is provided only in the light receiving area provided with the microlenses on the surface of the solid-state image pickup element chip, it is possible to obtain the solid-state image pickup device having a reduced mounting size. . Also, on the surface of the hermetically sealed part,
An optical component such as a prism can be indirectly adhered to the light receiving area, and the mounting size can be reduced without deteriorating the light collecting ability of the microlens.
Further, in the wafer state of the solid-state imaging device chip, it is possible to collectively provide the light-tight area with the airtight sealing portion for all the chips, and thus, the effect of eliminating the stain prevention process during dicing can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る固体撮像装置の第1実施例の概略
平面図及び断面図である。
FIG. 1 is a schematic plan view and a cross-sectional view of a first embodiment of a solid-state imaging device according to the present invention.

【図2】第2実施例を示す断面図である。FIG. 2 is a sectional view showing a second embodiment.

【図3】第3実施例を示す断面図である。FIG. 3 is a sectional view showing a third embodiment.

【図4】第4実施例を示す断面図である。FIG. 4 is a sectional view showing a fourth embodiment.

【図5】第5実施例を示す断面図である。FIG. 5 is a sectional view showing a fifth embodiment.

【図6】第6実施例を示す断面図である。FIG. 6 is a sectional view showing a sixth embodiment.

【図7】第7実施例を示す断面図である。FIG. 7 is a sectional view showing a seventh embodiment.

【図8】従来の固体撮像装置の実装態様の構成例を示す
断面図である。
FIG. 8 is a cross-sectional view showing a configuration example of a mounting manner of a conventional solid-state imaging device.

【図9】従来の固体撮像装置の実装態様の他の構成例を
示す断面図である。
FIG. 9 is a cross-sectional view showing another configuration example of a mounting manner of a conventional solid-state imaging device.

【符号の説明】[Explanation of symbols]

1 固体撮像素子チップ 2 受光エリア 3 マイクロレンズ 4 封止部材 4a 枠部 5 電極 11 封止部材 11a 平板部 11b 枠部 21 基板 22 ボンディングワイヤ 23 封止樹脂 31 光学部品 32 接着剤 41 光学部品 41a 枠部 51 固体撮像素子チップ 52 凹部 53 平板状封止部材 1 Solid-state imaging device chip 2 Light receiving area 3 Micro lens 4 Sealing member 4a Frame part 5 Electrode 11 Sealing member 11a Flat plate part 11b Frame part 21 Substrate 22 Bonding wire 23 Sealing resin 31 Optical component 32 Adhesive 41 Optical component 41a Frame 51 Solid-state image sensor chip 52 Recess 53 Flat plate-shaped sealing member

───────────────────────────────────────────────────── フロントページの続き (72)発明者 中山 高志 東京都渋谷区幡ケ谷2丁目43番2号 オリ ンパス光学工業株式会社内 (72)発明者 田中 和恵 東京都渋谷区幡ケ谷2丁目43番2号 オリ ンパス光学工業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Takashi Nakayama 2-43-2 Hatagaya, Shibuya-ku, Tokyo Inside Olympus Optical Co., Ltd. (72) Kazue Tanaka 2-43-2 Hatagaya, Shibuya-ku, Tokyo Olympus Optical Co., Ltd.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 オンチップマイクロレンズを備えた受光
エリアを有する固体撮像素子チップの受光エリアのみ
に、透明部材からなる気密封止部を設けたことを特徴と
する固体撮像装置。
1. A solid-state image pickup device comprising a hermetically sealed portion made of a transparent member provided only in a light-receiving area of a solid-state image pickup element chip having a light-receiving area provided with an on-chip microlens.
【請求項2】 前記気密封止部は、平板部とその下面縁
部に一体的に形成された枠部とで構成されていることを
特徴とする請求項1記載の固体撮像装置。
2. The solid-state imaging device according to claim 1, wherein the hermetically sealed portion is composed of a flat plate portion and a frame portion integrally formed with a lower surface edge portion thereof.
【請求項3】 前記気密封止部は、平板部とその下面縁
部に接着された枠部とで構成されていることを特徴とす
る請求項1記載の固体撮像装置。
3. The solid-state imaging device according to claim 1, wherein the hermetically sealed portion includes a flat plate portion and a frame portion adhered to an edge portion of a lower surface thereof.
【請求項4】 前記気密封止部は、透明光学部品とその
下面の縁部に一体的に形成された枠部とで構成されてい
ることを特徴とする請求項1記載の固体撮像装置。
4. The solid-state imaging device according to claim 1, wherein the hermetically sealed portion is composed of a transparent optical component and a frame portion integrally formed with an edge portion of a lower surface thereof.
【請求項5】 前記固体撮像素子チップは、チップ表面
に凹部が形成されていて、該凹部に受光エリアが形成さ
れていることを特徴とする請求項1記載の固体撮像装
置。
5. The solid-state imaging device according to claim 1, wherein the solid-state imaging device chip has a recess formed on the surface of the chip, and a light-receiving area is formed in the recess.
【請求項6】 前記受光エリアのオンチップマイクロレ
ンズ表面と前記気密封止部の裏面との距離が、少なくと
も5μm以上であることを特徴とする請求項1〜5のい
ずれか1項に記載の固体撮像装置。
6. The distance between the front surface of the on-chip microlens in the light receiving area and the back surface of the hermetically sealed portion is at least 5 μm or more, and any one of claims 1 to 5 is provided. Solid-state imaging device.
【請求項7】 前記固体撮像素子チップに設けた気密封
止部以外のチップ表面に樹脂封止を施したことを特徴と
する請求項1〜6のいずれか1項に記載の固体撮像装
置。
7. The solid-state image pickup device according to claim 1, wherein the chip surface other than the hermetically sealed portion provided on the solid-state image pickup element chip is resin-sealed.
【請求項8】 前記気密封止部の表面に光学部品を接着
していることを特徴とする請求項1〜3及び5〜7のい
ずれか1項に記載の固体撮像装置。
8. The solid-state imaging device according to claim 1, wherein an optical component is bonded to the surface of the hermetically sealed portion.
JP5349016A 1993-12-28 1993-12-28 Solid-state imaging device Pending JPH07202152A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5349016A JPH07202152A (en) 1993-12-28 1993-12-28 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5349016A JPH07202152A (en) 1993-12-28 1993-12-28 Solid-state imaging device

Publications (1)

Publication Number Publication Date
JPH07202152A true JPH07202152A (en) 1995-08-04

Family

ID=18400924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5349016A Pending JPH07202152A (en) 1993-12-28 1993-12-28 Solid-state imaging device

Country Status (1)

Country Link
JP (1) JPH07202152A (en)

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001065839A1 (en) * 2000-03-02 2001-09-07 Olympus Optical Co., Ltd. Small-sized image pickup module
JP2002231919A (en) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd Solid-state image pickup device and its manufacturing method
US6483179B2 (en) 2000-03-10 2002-11-19 Olympus Optical Co., Ltd. Solid-state image pickup apparatus and fabricating method thereof
JP2003318377A (en) * 2002-04-24 2003-11-07 Fuji Photo Film Co Ltd Manufacturing method and fixing method for solid-state image sensor
JP2004088082A (en) * 2002-06-24 2004-03-18 Fuji Photo Film Co Ltd Solid-state imaging device and manufacturing method thereof
JP2004335794A (en) * 2003-05-08 2004-11-25 Fuji Photo Film Co Ltd Solid-state imaging device, camera module, and camera module manufacturing method
JP2005056999A (en) * 2003-08-01 2005-03-03 Fuji Photo Film Co Ltd Solid-state imaging device and manufacturing method thereof
JP2005322851A (en) * 2004-05-11 2005-11-17 Fuji Photo Film Co Ltd Solid-state imaging apparatus
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
EP1503421A3 (en) * 2003-08-01 2006-07-12 Fuji Photo Film Co., Ltd. Solid-state imaging device and method for manufacturing the same
US7084922B2 (en) 2000-02-23 2006-08-01 Mitsubishi Denki Kabushiki Kaisha Pickup device
US7126637B2 (en) 2001-02-06 2006-10-24 Olympus Optical Co., Ltd. Solid-state image pickup apparatus having a hermetic seal portion and fabricating method thereof
JP2006295481A (en) * 2005-04-08 2006-10-26 Matsushita Electric Ind Co Ltd Semiconductor imaging device and manufacturing method thereof
US7172923B2 (en) 2002-04-26 2007-02-06 Fuji Photo Film Co., Ltd. Imaging device and manufacturing method for imaging device
JP2007221231A (en) * 2006-02-14 2007-08-30 Denso Corp Imaging module and manufacturing method thereof
KR100791730B1 (en) * 2005-02-15 2008-01-03 샤프 가부시키가이샤 Semiconductor device and manufacturing method thereof
US7332783B2 (en) 2002-07-17 2008-02-19 Fujifilm Corporation Semiconductor device with a photoelectric converting portion and a light-shading means
JP2008042186A (en) * 2006-07-11 2008-02-21 Sumitomo Bakelite Co Ltd Light receiving device and method for manufacturing light receiving device
US7365379B2 (en) 2004-06-22 2008-04-29 Fujifilm Corporation Solid state imaging unit and endoscope
CN100394607C (en) * 2003-11-18 2008-06-11 宏齐科技股份有限公司 packaging method of optical sensing chip
EP1942522A2 (en) 2002-07-29 2008-07-09 FUJIFILM Corporation Solid-state imaging device and method of manufacturing the same
CN100411122C (en) * 2001-12-27 2008-08-13 精工爱普生株式会社 Optical device manufacturing method
CN100423277C (en) * 2004-06-15 2008-10-01 夏普株式会社 Semiconductor wafer manufacturing method and semiconductor device manufacturing method having lid portion
JP2008252127A (en) * 2008-06-30 2008-10-16 Fujifilm Corp Solid-state imaging device and manufacturing method thereof
US7456483B2 (en) 2004-05-10 2008-11-25 Sharp Kabushiki Kaisha Semiconductor device, manufacturing method of semiconductor device and module for optical device
JP2008288603A (en) * 2008-06-16 2008-11-27 Fujifilm Corp Solid-state imaging device and manufacturing method thereof
US7501304B2 (en) 2005-09-20 2009-03-10 Fujifilm Corporation Method of cleaning cover glass having spacer
JP2009224400A (en) * 2008-03-13 2009-10-01 Olympus Corp Solid-state image pickup apparatus and method for manufacturing the same
US8243461B2 (en) 2008-12-04 2012-08-14 Renesas Electronics Corporation Electronic device and process for manufacturing electronic device
US8241951B2 (en) 2008-12-19 2012-08-14 Canon Kabushiki Kaisha Method of manufacturing solid-state image pickup device and solid-state image pickup device
US8270177B2 (en) 2007-07-27 2012-09-18 Renesas Electronics Corporation Electronic device and method for manufacturing electronic device
US8279336B2 (en) 2009-06-09 2012-10-02 Canon Kabushiki Kaisha Solid-state image pickup device
JP2013077839A (en) * 2013-01-11 2013-04-25 Toppan Printing Co Ltd Solid-state imaging apparatus
US10009523B2 (en) 2015-05-11 2018-06-26 Samsung Electro-Mechanics Co., Ltd. Electronic module and method of manufacturing the same
US10164602B2 (en) 2015-09-14 2018-12-25 Samsung Electro-Mechanics Co., Ltd. Acoustic wave device and method of manufacturing the same
US10600835B2 (en) 2016-12-12 2020-03-24 Samsung Electro-Mechanics Co., Ltd. Electronic module and method of manufacturing the same
WO2020079735A1 (en) * 2018-10-15 2020-04-23 オリンパス株式会社 Optical device for endoscope, endoscope, and method for manufacturing optical device for endoscope

Cited By (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7084922B2 (en) 2000-02-23 2006-08-01 Mitsubishi Denki Kabushiki Kaisha Pickup device
WO2001065839A1 (en) * 2000-03-02 2001-09-07 Olympus Optical Co., Ltd. Small-sized image pickup module
US6483179B2 (en) 2000-03-10 2002-11-19 Olympus Optical Co., Ltd. Solid-state image pickup apparatus and fabricating method thereof
US6780667B2 (en) 2000-03-10 2004-08-24 Olympus Optical, Co., Ltd. Solid-state image pickup apparatus and fabricating method thereof
JP2002231919A (en) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd Solid-state image pickup device and its manufacturing method
US7126637B2 (en) 2001-02-06 2006-10-24 Olympus Optical Co., Ltd. Solid-state image pickup apparatus having a hermetic seal portion and fabricating method thereof
CN100411122C (en) * 2001-12-27 2008-08-13 精工爱普生株式会社 Optical device manufacturing method
US7411230B2 (en) 2002-04-22 2008-08-12 Fujifilm Corporation Solid-state imaging device and method of manufacturing said solid-state imaging device
US7638823B2 (en) 2002-04-22 2009-12-29 Fujifilm Corporation Solid-state imaging device and method of manufacturing said solid-state imaging device
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
US7659136B2 (en) 2002-04-22 2010-02-09 Fujifilm Corporation Solid-state imaging device and method of manufacturing said solid-state imaging device
US7582505B2 (en) 2002-04-22 2009-09-01 Fujifilm Corporation Solid-state imaging device and method of manufacturing said solid-state imaging device
JP2003318377A (en) * 2002-04-24 2003-11-07 Fuji Photo Film Co Ltd Manufacturing method and fixing method for solid-state image sensor
US7172923B2 (en) 2002-04-26 2007-02-06 Fuji Photo Film Co., Ltd. Imaging device and manufacturing method for imaging device
JP2004088082A (en) * 2002-06-24 2004-03-18 Fuji Photo Film Co Ltd Solid-state imaging device and manufacturing method thereof
US6930327B2 (en) 2002-06-24 2005-08-16 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing the same
US7592200B2 (en) 2002-06-24 2009-09-22 Fujifilm Corporation Solid-state imaging device and method of manufacturing the same
US7518206B2 (en) 2002-07-17 2009-04-14 Fujifilm Corporation Semiconductor device with a photoelectric converting portion and a light-shading means
US7332783B2 (en) 2002-07-17 2008-02-19 Fujifilm Corporation Semiconductor device with a photoelectric converting portion and a light-shading means
US7384812B2 (en) 2002-07-17 2008-06-10 Fujifilm Corporation Method of manufacturing a semiconductor device with light shading means
EP1942522A2 (en) 2002-07-29 2008-07-09 FUJIFILM Corporation Solid-state imaging device and method of manufacturing the same
EP1990829A2 (en) 2002-07-29 2008-11-12 FUJIFILM Corporation Solid-state imaging device and method of manufacturing the same
EP2178112A2 (en) 2002-07-29 2010-04-21 Fujifilm Corporation Solid-state imaging device and method of manufacturing the same
JP2004335794A (en) * 2003-05-08 2004-11-25 Fuji Photo Film Co Ltd Solid-state imaging device, camera module, and camera module manufacturing method
US7692720B2 (en) 2003-08-01 2010-04-06 Fujifilm Corporation Solid-state imaging device and method for manufacturing the same
JP2005056999A (en) * 2003-08-01 2005-03-03 Fuji Photo Film Co Ltd Solid-state imaging device and manufacturing method thereof
US7688382B2 (en) 2003-08-01 2010-03-30 Fujifilm Corporation Solid-state imaging device and method for manufacturing the same
EP1503421A3 (en) * 2003-08-01 2006-07-12 Fuji Photo Film Co., Ltd. Solid-state imaging device and method for manufacturing the same
CN100355080C (en) * 2003-08-01 2007-12-12 富士胶片株式会社 Solid-state imaging device and method for manufacturing the same
CN100394607C (en) * 2003-11-18 2008-06-11 宏齐科技股份有限公司 packaging method of optical sensing chip
CN100446223C (en) * 2004-05-10 2008-12-24 夏普株式会社 Semiconductor device, manufacturing method thereof, and optical device module
US7456483B2 (en) 2004-05-10 2008-11-25 Sharp Kabushiki Kaisha Semiconductor device, manufacturing method of semiconductor device and module for optical device
JP2005322851A (en) * 2004-05-11 2005-11-17 Fuji Photo Film Co Ltd Solid-state imaging apparatus
CN100423277C (en) * 2004-06-15 2008-10-01 夏普株式会社 Semiconductor wafer manufacturing method and semiconductor device manufacturing method having lid portion
US7365379B2 (en) 2004-06-22 2008-04-29 Fujifilm Corporation Solid state imaging unit and endoscope
KR100791730B1 (en) * 2005-02-15 2008-01-03 샤프 가부시키가이샤 Semiconductor device and manufacturing method thereof
JP2006295481A (en) * 2005-04-08 2006-10-26 Matsushita Electric Ind Co Ltd Semiconductor imaging device and manufacturing method thereof
US7501304B2 (en) 2005-09-20 2009-03-10 Fujifilm Corporation Method of cleaning cover glass having spacer
JP2007221231A (en) * 2006-02-14 2007-08-30 Denso Corp Imaging module and manufacturing method thereof
JP2008042186A (en) * 2006-07-11 2008-02-21 Sumitomo Bakelite Co Ltd Light receiving device and method for manufacturing light receiving device
US9327457B2 (en) 2007-07-27 2016-05-03 Renesas Electronics Corporation Electronic device and method for manufacturing electronic device
US8270177B2 (en) 2007-07-27 2012-09-18 Renesas Electronics Corporation Electronic device and method for manufacturing electronic device
US8159575B2 (en) 2008-03-13 2012-04-17 Olympus Corporation Solid-state image pickup apparatus and method for manufacturing the same
JP2009224400A (en) * 2008-03-13 2009-10-01 Olympus Corp Solid-state image pickup apparatus and method for manufacturing the same
JP2008288603A (en) * 2008-06-16 2008-11-27 Fujifilm Corp Solid-state imaging device and manufacturing method thereof
JP2008252127A (en) * 2008-06-30 2008-10-16 Fujifilm Corp Solid-state imaging device and manufacturing method thereof
US8986588B2 (en) 2008-12-04 2015-03-24 Renesas Electronics Corporation Electronic device and process for manufacturing electronic device
US8243461B2 (en) 2008-12-04 2012-08-14 Renesas Electronics Corporation Electronic device and process for manufacturing electronic device
US8241951B2 (en) 2008-12-19 2012-08-14 Canon Kabushiki Kaisha Method of manufacturing solid-state image pickup device and solid-state image pickup device
US8279336B2 (en) 2009-06-09 2012-10-02 Canon Kabushiki Kaisha Solid-state image pickup device
JP2013077839A (en) * 2013-01-11 2013-04-25 Toppan Printing Co Ltd Solid-state imaging apparatus
US10009523B2 (en) 2015-05-11 2018-06-26 Samsung Electro-Mechanics Co., Ltd. Electronic module and method of manufacturing the same
US10602036B2 (en) 2015-05-11 2020-03-24 Samsung Electro-Mechanics Co., Ltd. Electronic module and method of manufacturing the same
US10164602B2 (en) 2015-09-14 2018-12-25 Samsung Electro-Mechanics Co., Ltd. Acoustic wave device and method of manufacturing the same
US10600835B2 (en) 2016-12-12 2020-03-24 Samsung Electro-Mechanics Co., Ltd. Electronic module and method of manufacturing the same
WO2020079735A1 (en) * 2018-10-15 2020-04-23 オリンパス株式会社 Optical device for endoscope, endoscope, and method for manufacturing optical device for endoscope

Similar Documents

Publication Publication Date Title
JPH07202152A (en) Solid-state imaging device
JP3880278B2 (en) Solid-state imaging device and manufacturing method thereof
KR100575094B1 (en) Module for optical device, and manufacturing method therefor
KR970005706B1 (en) Ccd and the manufacturing method
JP2001351997A (en) Mounting structure of light receiving sensor and method of using the same
JP4846910B2 (en) Solid-state imaging device
CN100581216C (en) Ultra-small camera module and manufacturing method thereof
JP2010103490A (en) Optical element, optical element wafer, optical element wafer module, optical element module, method of manufacturing optical element module, electron device wafer module, method of manufacturing electronic device module, electronic element module, and electronic information device
JP2608048B2 (en) Integrated imager-prism structure
JP4618639B2 (en) Manufacturing method of semiconductor device
US7655505B2 (en) Manufacturing method of semiconductor device
JPH01202989A (en) Solid-state image pickup device
JP2002231920A (en) Solid-state imaging device and manufacturing method thereof
JP2001108878A (en) Optical module, imaging device and camera system
JPS61134187A (en) Solid-state image pickup device
JPS61123288A (en) Solid-state pick up device
JPH08116042A (en) Solid-state imaging device and manufacturing method thereof
JP3896586B2 (en) Solid-state imaging device and solid-state imaging camera
JP3121100B2 (en) Solid-state imaging device
JP3166216B2 (en) Solid-state imaging device with on-chip lens and method of manufacturing the same
JPH09199701A (en) Solid-state image pick-up device
JPS61134186A (en) Solid-state image pickup device
JP4521938B2 (en) Imaging device
JPS6360561A (en) Solid-state image sensing device
JP2878875B2 (en) CCD module

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20020611