JPH07210828A - Magnetoresistive thin film magnetic head - Google Patents
Magnetoresistive thin film magnetic headInfo
- Publication number
- JPH07210828A JPH07210828A JP6003937A JP393794A JPH07210828A JP H07210828 A JPH07210828 A JP H07210828A JP 6003937 A JP6003937 A JP 6003937A JP 393794 A JP393794 A JP 393794A JP H07210828 A JPH07210828 A JP H07210828A
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- layer
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- magnetic
- thin film
- effect
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Abstract
(57)【要約】
【目的】 縦バイアス層である硬磁性膜の保磁力を高
め、永続してバイアス磁界を供給できるので磁区制御を
安定して行うことができ、バルクハウゼンノイズの低減
を達成できる高性能で信頼性の高いMR効果型薄膜磁気
ヘッドの提供を目的とする。
【構成】 下部シールド層3と上部シールド層11との
間に横バイアス層5,磁気抵抗効果層7,硬磁性層8,
リード層9等を有する再生感知部を備えた磁気抵抗効果
型薄膜磁気ヘッドであって、硬磁性層8が強磁性膜と非
磁性膜が交互に積層された3層以上の多層構造を有する
硬磁性層8である構成を有している。
(57) [Abstract] [Purpose] The coercive force of the hard magnetic film, which is the longitudinal bias layer, can be increased and the bias magnetic field can be supplied permanently, so that stable domain control can be performed and Barkhausen noise can be reduced. It is an object of the present invention to provide an MR effect type thin film magnetic head having high performance and high reliability. [Structure] Between the lower shield layer 3 and the upper shield layer 11, a lateral bias layer 5, a magnetoresistive layer 7, a hard magnetic layer 8,
A magnetoresistive thin film magnetic head including a read sensing portion having a lead layer 9 and the like, wherein a hard magnetic layer 8 has a multilayer structure of three or more layers in which ferromagnetic films and nonmagnetic films are alternately laminated. It has a structure which is the magnetic layer 8.
Description
【0001】[0001]
【産業上の利用分野】本発明は磁気ディスク装置等の磁
気記録装置に用いられる磁気抵抗効果型薄膜磁気ヘッド
(以下、MR効果型薄膜磁気ヘッドと略す)に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect thin film magnetic head (hereinafter referred to as MR effect thin film magnetic head) used in a magnetic recording device such as a magnetic disk device.
【0002】[0002]
【従来の技術】近年、磁気ディスク装置等の小型化・大
容量化に伴い、超高密度化を図るために、磁気抵抗(M
R)効果を使ったMR効果型薄膜磁気ヘッドが用いられ
るようになった。2. Description of the Related Art In recent years, magnetic resistance (M
The MR effect thin film magnetic head using the (R) effect has come to be used.
【0003】以下に従来のMR効果型薄膜磁気ヘッドに
ついて説明する。一般的にMR効果層を再生ヘッドとし
て安定して機能させるには横方向バイアスと縦方向バイ
アスの2種類のバイアス磁界をMR効果層に印加する必
要がある。横方向バイアス磁界はR−H特性曲線の最も
直線的な範囲に再生ヘッドの動作点をシフトさせるため
に必要なバイアス磁界であり、再生出力の線形性を保つ
ことを目的とする。この横方向バイアス磁界は、磁気記
録媒体面に垂直であり、MR効果層の表面に対しては平
行な方向に印加されるもので、シャントバイアスやSA
Lバイアス等の種々の方法がある。A conventional MR effect thin film magnetic head will be described below. Generally, in order for the MR effect layer to function stably as a reproducing head, it is necessary to apply two types of bias magnetic fields, that is, a lateral bias and a longitudinal bias. The lateral bias magnetic field is a bias magnetic field necessary to shift the operating point of the reproducing head to the most linear range of the RH characteristic curve, and is intended to maintain the linearity of the reproducing output. This lateral bias magnetic field is applied in a direction perpendicular to the surface of the magnetic recording medium and parallel to the surface of the MR effect layer.
There are various methods such as L bias.
【0004】一方、縦方向バイアス磁界は、磁気記録媒
体面に平行かつMR効果層の長手方向に平行な方向に印
加され、MR効果層を単磁区化することで、多磁区作用
から生じるバルクハウゼンノイズを抑える機能を有して
いる。従来より、この縦方向バイアス磁界は、大きく分
けて2つの方法により実現されている。一つは、例え
ば、特開昭62−40610号公報に開示されているよ
うに、FeMn等の反強磁性膜を用いてMR効果層との
間で交換結合をさせる方法であり、他方はCoCrPt
等の保磁力の高い硬磁性層と、軟磁性膜であるMR効果
層とを強磁性結合あるいは静磁結合をさせる方法であ
り、特開昭60−59518号公報,特開平2−220
213号公報に各々開示されている。On the other hand, the longitudinal bias magnetic field is applied in the direction parallel to the surface of the magnetic recording medium and parallel to the longitudinal direction of the MR effect layer, and by making the MR effect layer into a single domain, Barkhausen generated from the multi-domain action. It has the function of suppressing noise. Conventionally, this longitudinal bias magnetic field is roughly divided into two methods. One is, for example, as disclosed in Japanese Patent Application Laid-Open No. 62-40610, a method of performing exchange coupling with an MR effect layer using an antiferromagnetic film such as FeMn, and the other is CoCrPt.
Is a method of ferromagnetically coupling or magnetostatically coupling a hard magnetic layer having a high coercive force, such as the MR effect layer, which is a soft magnetic film.
No. 213 publications.
【0005】このように反強磁性膜,硬磁性層のいずれ
を縦方向バイアスとして利用しても、MR効果層の磁区
や磁壁を制御することでバルクハウゼンノイズを低減さ
せることが可能である。反強磁性膜を使用して磁区制御
を行う場合は、ブロッキング温度等の磁気特性の制約か
ら反強磁性材料としては、略FeMnに限定される。As described above, no matter whether the antiferromagnetic film or the hard magnetic layer is used as the longitudinal bias, it is possible to reduce the Barkhausen noise by controlling the magnetic domain or domain wall of the MR effect layer. When magnetic domain control is performed using an antiferromagnetic film, the antiferromagnetic material is limited to substantially FeMn because of restrictions on magnetic properties such as blocking temperature.
【0006】[0006]
【発明が解決しようとする課題】しかしながら上記従来
の構成では、縦バイアス層に硬磁性層を使用した場合、
バイアス磁界の減少をなくし、磁区制御の効果を永続的
に保持する高い保磁力が必要であり、CoCrTa膜等
の一般的な硬磁性層においては、この高い保磁力を得る
ために、Cr膜等の下地層を形成する必要があるが、こ
のCr膜厚により硬磁性層の膜厚が実質的に厚くなりプ
ロセス上不利になる問題点を有していた。また、Ptを
添加することで下地層がなくても高い保磁力が得られる
という報告もあるが、これは、磁気ディスクのような非
常に高い平面度を必要とし、レジスト処理等の様々なプ
ロセスが加わるMR効果型薄膜磁気ヘッドに適用するに
は困難であり、安定性に欠けることからMR効果型薄膜
磁気ヘッドの磁区制御に用いられる硬磁性層の保磁力は
一般的に1500Oe程度であり、保磁力に欠けるとい
う問題点を有していた。更に、前述の特開昭60−59
518号公報においては、MR効果層と硬磁性層との強
磁性結合を利用した磁区制御を行っており、この強磁性
結合は硬磁性層固有の保磁力を減少させるためにバイア
ス磁界の永続性に欠けるという問題点を有していた。ま
た、前述の特開平2−220213号公報においては、
非磁性層を介することで、MR効果素子と硬磁性層との
静磁結合を利用しているが、この方法においてもバルク
ハウゼンノイズの発生を完全に抑えることは困難である
という問題点を有していた。However, in the above conventional structure, when a hard magnetic layer is used as the longitudinal bias layer,
It is necessary to have a high coercive force that eliminates the decrease of the bias magnetic field and maintains the effect of controlling the magnetic domain permanently. In general hard magnetic layers such as CoCrTa film, in order to obtain this high coercive force, the Cr film, etc. However, there is a problem in that the film thickness of the hard magnetic layer is substantially increased due to this Cr film thickness, which is disadvantageous in the process. It is also reported that the addition of Pt can provide a high coercive force without an underlayer, but this requires very high flatness like a magnetic disk, and various processes such as resist processing are required. Is difficult to apply to an MR effect type thin film magnetic head, and because of lack of stability, the coercive force of the hard magnetic layer used for controlling magnetic domains of the MR effect type thin film magnetic head is generally about 1500 Oe, It had a problem that it lacked coercive force. Further, the above-mentioned JP-A-60-59.
In Japanese Patent No. 518, the magnetic domain control is performed by utilizing the ferromagnetic coupling between the MR effect layer and the hard magnetic layer. This ferromagnetic coupling reduces the coercive force specific to the hard magnetic layer, and thus the durability of the bias magnetic field is increased. It had a problem that it lacked. Further, in the above-mentioned JP-A-2-220213,
Although the magnetostatic coupling between the MR effect element and the hard magnetic layer is used by interposing the non-magnetic layer, it is difficult to completely suppress Barkhausen noise even in this method. Was.
【0007】本発明は上記従来の問題点を解決するもの
で、縦バイアス層である硬磁性層の保磁力を高め、永続
してバイアス磁界を供給できるので磁区制御を安定して
行うことができ、バルクハウゼンノイズの低減を達成で
きる高性能で信頼性の高いMR効果型薄膜磁気ヘッドを
提供することを目的とする。The present invention solves the above problems of the prior art. Since the coercive force of the hard magnetic layer, which is the longitudinal bias layer, can be increased and the bias magnetic field can be supplied permanently, the magnetic domain control can be stably performed. It is an object of the present invention to provide a high-performance and highly-reliable MR effect type thin film magnetic head capable of reducing Barkhausen noise.
【0008】[0008]
【課題を解決するための手段】この目的を達成するため
に本発明の請求項1に記載のMR効果型薄膜磁気ヘッド
は、下部シールド層と上部シールド層との間に横バイア
ス層,磁気抵抗効果層,硬磁性層,リード層等を有する
再生感知部を備えた磁気抵抗効果型薄膜磁気ヘッドであ
って、前記硬磁性層が強磁性膜と非磁性膜が交互に積層
された3層以上の多層構造を有する構成からなり、請求
項2に記載のMR効果型薄膜磁気ヘッドは、請求項1に
おいて、前記硬磁性層が前記磁気抵抗効果層の前記リー
ド層側及び/又は上部シールド層のリード層側に直接接
して形成されている構成を有しており、請求項3に記載
のMR効果型薄膜磁気ヘッドは、請求項2において、前
記硬磁性層の前記磁気抵抗効果層及び/又は上部シール
ド層と接触している層が、強磁性膜である構成を有して
おり、請求項4に記載のMR効果型薄膜磁気ヘッドは、
下部シールド層と上部シールド層との間に横バイアス
層,磁気抵抗効果層,硬磁性層,リード層等を有する再
生感知部を備えた磁気抵抗効果型薄膜磁気ヘッドであっ
て、前記硬磁性層が単層の硬磁性層で、かつ前記上部シ
ールド層のリード層側に非磁性膜を介して形成されてい
る構成を有している。In order to achieve this object, an MR effect thin film magnetic head according to a first aspect of the present invention has a lateral bias layer and a magnetic resistance between a lower shield layer and an upper shield layer. A magnetoresistive effect thin film magnetic head having a reproduction sensing part having an effect layer, a hard magnetic layer, a lead layer, etc., wherein the hard magnetic layer comprises three or more layers in which ferromagnetic films and nonmagnetic films are alternately laminated. The MR effect thin film magnetic head according to claim 2, wherein the hard magnetic layer is the lead layer side of the magnetoresistive effect layer and / or the upper shield layer. The MR effect thin film magnetic head according to claim 3, wherein the MR effect thin film magnetic head is formed in direct contact with the lead layer side, and the magnetoresistive effect layer and / or the hard magnetic layer according to claim 2. In contact with the upper shield layer Layer has a structure which is a ferromagnetic film, the MR effect type thin film magnetic head according to claim 4,
What is claimed is: 1. A magnetoresistive effect thin-film magnetic head comprising a reproducing sensing part having a lateral bias layer, a magnetoresistive effect layer, a hard magnetic layer, a lead layer, etc. between a lower shield layer and an upper shield layer, said hard magnetic layer. Is a single hard magnetic layer and is formed on the lead layer side of the upper shield layer via a non-magnetic film.
【0009】ここで、3層以上の多層構造を有する硬磁
性層を構成する強磁性膜としては、CoCrPt膜の他
に、CoNi膜,CoCrTa膜等であってもよい。ま
た、非磁性膜としては、Cr膜の他にTa,Ti,W等
であってもよい。強磁性層と非磁性層の層数は、強磁性
結合及び静磁結合を同時に利用する場合は、強磁性膜の
層数は2層以上必要である。また、上部シールド層のリ
ード層側のみに硬磁性層を設ける場合は硬磁性層の保磁
力を高めるために下地層を厚くし、硬磁性層は単層構造
でもよいが、上部シールド層との間に非磁性膜を介した
静磁結合とした方が効果的である。Here, the ferromagnetic film forming the hard magnetic layer having a multi-layered structure of three or more layers may be a CoCrPt film, a CoNi film, a CoCrTa film, or the like. Further, as the non-magnetic film, Ta, Ti, W or the like may be used instead of the Cr film. The number of ferromagnetic layers and the number of non-magnetic layers are required to be two or more when the ferromagnetic coupling and the magnetostatic coupling are used simultaneously. When the hard magnetic layer is provided only on the lead layer side of the upper shield layer, the hard magnetic layer may have a single layer structure in order to increase the coercive force of the hard magnetic layer. It is more effective to use magnetostatic coupling via a non-magnetic film between them.
【0010】[0010]
【作用】この構成によって、縦バイアス層である硬磁性
層を強磁性膜と非磁性膜とを交互に積層された3層以上
の多層構造とすることにより、保磁力を大きくすること
ができるので、永続的に安定した磁区制御を行うことが
できる。また、強磁性膜と非磁性膜を交互にすることに
より、MR効果層に強磁性膜を直接接した部分は強磁性
結合となり、非磁性層を介した強磁性膜とは静磁結合と
なり、この両方で磁区制御を行うことができる。また、
硬磁性層をMR効果層だけでなく、上部シールド層のリ
ード層側にも設けた磁区制御を行うために、バルクハウ
ゼンノイズの発生を抑えることができる。With this structure, the coercive force can be increased by forming the hard magnetic layer, which is the longitudinal bias layer, into a multilayer structure of three or more layers in which ferromagnetic films and nonmagnetic films are alternately laminated. It is possible to carry out stable and stable magnetic domain control. Further, by alternating the ferromagnetic film and the non-magnetic film, the portion where the ferromagnetic film is in direct contact with the MR effect layer is ferromagnetically coupled, and the ferromagnetic film via the non-magnetic layer is magnetostatically coupled. Magnetic domain control can be performed by both of them. Also,
Since the magnetic domain control is performed by providing the hard magnetic layer not only on the MR effect layer but also on the lead layer side of the upper shield layer, it is possible to suppress the generation of Barkhausen noise.
【0011】[0011]
(実施例1)以下本発明の第1の実施例について、図面
を参照しながら説明する。図1は本発明の第1の実施例
におけるMR効果型薄膜磁気ヘッドの要部断面図であ
り、図2は図1のA部分の拡大図である。1はAl2O3
−TiC等のセラミック材からなる基板、2はAl
2O3,SiO2等からなる絶縁層、3はNiFe等の軟
磁性体からなる下部シールド層、4はAl2O3,SiO
2等の絶縁層からなる下部再生ギャップ、5は後述のM
R効果膜に横バイアス磁界を与えるためのアモルファス
合金膜,NiFe系合金等で形成された横バイアス層、
6はTa,Ti,SiO2等からなり横バイアス層5と
後述のMR効果層とを磁気的に分離する非磁性層、7は
NiFe系合金膜やNiCo系合金膜からなるMR効果
層、8はMR効果層7の磁区を制御するための非磁性膜
と強磁性膜とを交互に積層した多層構造を有する硬磁性
層、9はAu,W等で形成されたリード層、10はAl
2O3,SiO2等の絶縁層からなる上部再生ギャップ、
11はNiFe等からなる上部シールド層、12はAl
2O3,SiO2等からなり再生ヘッドであるMR効果ヘ
ッドと記録ヘッドとを分離するための絶縁層、13はN
iFe膜等の軟磁性膜からなる記録ヘッドの下部コア、
14はAl2O3,SiO2等の絶縁層からなる記録ギャ
ップ、15はNiFe等の軟磁性膜からなる記録ヘッド
の上部コア、16はAl2O3等の保護層である。(First Embodiment) A first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view of an essential part of an MR effect thin film magnetic head in a first embodiment of the present invention, and FIG. 2 is an enlarged view of a portion A in FIG. 1 is Al 2 O 3
-Substrate made of ceramic material such as TiC, 2 is Al
An insulating layer made of 2 O 3 , SiO 2, etc., 3 is a lower shield layer made of a soft magnetic material such as NiFe, 4 is Al 2 O 3 , SiO
Lower reproduction gap composed of insulating layer such as 2
An amorphous alloy film for applying a lateral bias magnetic field to the R effect film, a lateral bias layer formed of a NiFe-based alloy, or the like,
6 is a non-magnetic layer made of Ta, Ti, SiO 2 or the like, which magnetically separates the lateral bias layer 5 from the MR effect layer described later, 7 is an MR effect layer made of a NiFe-based alloy film or a NiCo-based alloy film, 8 Is a hard magnetic layer having a multilayer structure in which a non-magnetic film and a ferromagnetic film for controlling the magnetic domains of the MR effect layer 7 are alternately laminated, 9 is a lead layer formed of Au, W or the like, and 10 is Al.
An upper reproducing gap made of an insulating layer such as 2 O 3 or SiO 2 ,
11 is an upper shield layer made of NiFe or the like, 12 is Al
An insulating layer made of 2 O 3 , SiO 2, etc. for separating the MR effect head, which is a reproducing head, from the recording head, and 13 is N
a lower core of a recording head made of a soft magnetic film such as an iFe film,
Reference numeral 14 is a recording gap made of an insulating layer such as Al 2 O 3 or SiO 2 , 15 is an upper core of a recording head made of a soft magnetic film such as NiFe, and 16 is a protective layer such as Al 2 O 3 .
【0012】図2において、8aはCr膜、8bはCo
CrPt膜であり、MR効果層7上にCr膜8a,Co
CrPt膜8bの順に非磁性膜と強磁性膜をそれぞれ交
互に各3層積層した多層構造を有しており、各層の膜厚
は100Åとした。In FIG. 2, 8a is a Cr film and 8b is Co.
It is a CrPt film, and a Cr film 8a, Co is formed on the MR effect layer 7.
The CrPt film 8b has a multilayer structure in which three nonmagnetic films and three ferromagnetic films are alternately laminated in this order, and the film thickness of each layer is 100Å.
【0013】以上のように構成されたMR効果型薄膜磁
気ヘッドについて、以下その動作を説明する。再生動作
中は、リード層9を介してMR効果層7に一定のセンス
電流が供給されている。そして対向する磁気記録媒体に
記録された情報の磁束をMR効果層7の感知部が電気抵
抗の変化として再生出力し、これを検知することにより
再生動作を行っている。このとき、縦バイアス層である
硬磁性層8は非磁性層と強磁性層が交互に積層された保
磁力の大きい3層以上の多層構造を有しており、安定し
た磁区制御を行うことができる。The operation of the MR effect type thin film magnetic head having the above structure will be described below. During the reproducing operation, a constant sense current is supplied to the MR effect layer 7 via the lead layer 9. Then, the magnetic flux of information recorded on the opposing magnetic recording medium is reproduced and output as a change in electric resistance by the sensing portion of the MR effect layer 7, and the reproducing operation is performed by detecting this. At this time, the hard magnetic layer 8 which is a longitudinal bias layer has a multilayer structure of three or more layers having a large coercive force in which nonmagnetic layers and ferromagnetic layers are alternately laminated, and stable magnetic domain control can be performed. it can.
【0014】(実験例1)縦バイアス層である硬磁性層
を非磁性層と強磁性層を交互に積層した多層構造とする
ことで高い保磁力が得られることを確認するために非磁
性層であるCr膜及び強磁性膜であるCoCrPt膜の
層数を5層一定にして各膜厚を変化させた場合の保磁力
を測定し、その結果を図3に示す。図3はCr膜の膜厚
と保磁力の関係を示す図である。図3において、例えば
Cr膜とCoCrPt膜との膜厚の合計が1500Åの
場合Cr膜の一層の膜厚は200Å,CoCrPt膜厚
は100Åとした。(Experimental Example 1) In order to confirm that a high coercive force can be obtained by making the hard magnetic layer, which is a longitudinal bias layer, have a multi-layer structure in which nonmagnetic layers and ferromagnetic layers are alternately laminated, The coercive force was measured when the number of layers of the Cr film and the CoCrPt film which is a ferromagnetic film was made constant, and each film thickness was changed, and the result is shown in FIG. FIG. 3 is a diagram showing the relationship between the thickness of the Cr film and the coercive force. In FIG. 3, for example, when the total thickness of the Cr film and the CoCrPt film is 1500Å, the thickness of one layer of the Cr film is 200Å and the CoCrPt film thickness is 100Å.
【0015】(比較例1)比較例として硬磁性層を膜厚
500ÅのCoCrPt膜とCr膜の2層構造としてC
r膜厚を変化させた場合の保磁力を測定し、その結果を
図3に示す。(Comparative Example 1) As a comparative example, a hard magnetic layer having a two-layer structure of a CoCrPt film and a Cr film having a film thickness of 500 liters was used as C.
The coercive force was measured when the r film thickness was changed, and the results are shown in FIG.
【0016】図3から明らかなように、2層膜,5層膜
共にCr膜の膜厚が厚くなるにともない全体の保磁力は
増加するが5層膜の方がCr膜の依存性が小さく保磁力
の値も高いことがわかった。As is clear from FIG. 3, the coercive force of both the two-layer film and the five-layer film increases as the film thickness of the Cr film increases, but the dependence of the Cr film on the five-layer film is smaller. It was found that the value of coercive force was also high.
【0017】以上のように本実施例によれば、MR効果
層上の縦バイアス層を非磁性膜であるCr膜と強磁性膜
であるCoCrPt膜を交互に各3層ずつ積層した6層
構造の硬磁性層とすることにより保磁力を高め、MR効
果層の磁区を安定して制御することができ、従来の2層
膜の硬磁性層に比べ製品歩留りにおいても30%以上向
上させることができた。As described above, according to this embodiment, the longitudinal bias layer on the MR effect layer has a 6-layer structure in which a Cr film which is a non-magnetic film and a CoCrPt film which is a ferromagnetic film are alternately laminated by three layers each. The hard magnetic layer can increase the coercive force and stably control the magnetic domains of the MR effect layer, and the product yield can be improved by 30% or more as compared with the conventional hard magnetic layer of the two-layer film. did it.
【0018】(実施例2)以下本発明の第2の実施例に
ついて、図面を参照しながら説明する。図4は本発明の
第2の実施例におけるMR効果型薄膜磁気ヘッドの縦バ
イアス層の要部断面拡大図である。実施例1と異なるの
は、MR効果層7の磁区を制御する縦バイアス層である
硬磁性層8′の積層順序をMR効果層7に接する側から
CoCrPt膜8b,Cr膜8aの順に交互に各3層ず
つ積層した6層構造の硬磁性層とした点である。(Second Embodiment) A second embodiment of the present invention will be described below with reference to the drawings. FIG. 4 is an enlarged cross-sectional view of a main portion of a vertical bias layer of an MR effect thin film magnetic head according to a second embodiment of the present invention. The difference from the first embodiment is that the hard magnetic layers 8'which are longitudinal bias layers for controlling the magnetic domains of the MR effect layer 7 are alternately stacked in the order of CoCrPt film 8b and Cr film 8a from the side in contact with the MR effect layer 7. The point is that a hard magnetic layer having a six-layer structure is formed by laminating three layers each.
【0019】以上のように構成されたMR効果型薄膜磁
気ヘッドについて、以下その動作を説明する。再生時の
動作については実施例1と同様であるが、MR効果層側
7に強磁性膜を配置したことで第1層の強磁性膜とMR
効果層7とは強磁性結合となり、更に、第2層目の非磁
性膜を介して第3層目の強磁性膜とは静磁結合となり、
この強磁性結合と静磁結合の2つの効果により、MR効
果層7の磁区をより安定して制御することができる。こ
の強磁性結合と静磁結合の効果を確認するために以下の
実験を行った。The operation of the MR effect type thin film magnetic head having the above structure will be described below. The operation at the time of reproduction is the same as that of the first embodiment, but by disposing the ferromagnetic film on the MR effect layer side 7, the ferromagnetic film of the first layer and the MR
Ferromagnetic coupling with the effect layer 7, and magnetostatic coupling with the ferromagnetic film of the third layer through the non-magnetic film of the second layer,
Due to the two effects of the ferromagnetic coupling and the magnetostatic coupling, the magnetic domain of the MR effect layer 7 can be controlled more stably. The following experiment was conducted in order to confirm the effect of this ferromagnetic coupling and magnetostatic coupling.
【0020】(実験例2)本実験例としてNiFe膜上
に膜厚100ÅのCoCrPt膜と膜厚100ÅのCr
膜を交互に各5層形成した多層膜を積層し、B−H特性
を測定し、その結果を図5(a)に示した。図5(a)
はCoCrPt膜とCr膜の5層膜のB−H特性を示し
た図である。(Experimental Example 2) In this experimental example, a CoCrPt film having a film thickness of 100Å and a Cr film having a film thickness of 100Å are formed on a NiFe film.
The BH characteristics were measured by laminating a multilayer film in which five films were alternately formed, and the results are shown in FIG. Figure 5 (a)
FIG. 4 is a diagram showing BH characteristics of a 5-layer film of CoCrPt film and Cr film.
【0021】(比較例2)比較例として、膜厚500Å
のCoCrPtの単層膜,保磁力0.3Oeの膜厚50
0ÅのNiFe層上に膜厚500ÅのCoCrPt膜を
積層したNiFe−CoCrPt複合膜,保磁力0.3
Oeの膜厚500ÅのNiFe層上に膜厚100ÅのC
r膜を積層し、更に膜厚500ÅのCoCrPt膜を積
層した3層膜の各々について、B−H特性を測定し、そ
の結果を図5(b)〜(d)に示した。図5(b)はN
iFe−CoCrPt複合膜のB−H特性を示した図で
あり、図5(c)はCoCrPt複合膜にCr膜を介し
たB−H特性を示した図であり、図5(d)はCoCr
Pt膜とCr膜の多層膜のB−H特性を示した図であ
る。硬磁性層が膜厚500ÅのCoCrPt単層膜の場
合は、図5(b)に示すように、保磁力が1500Oe
であるのに対し、保磁力0.3Oeの膜厚500ÅのN
iFe膜上に膜厚500ÅのCoCrPt膜を形成した
複合膜の場合は、図5(c)に示すように、保磁力は2
00Oeと単層膜に比べ大きく減少する。また、B−H
カーブはスムーズな形を示していることからNiFe膜
とCoCrPt膜との間では強磁性結合が起きているこ
とがわかる。また、上記のNiFe膜とCoCrPt膜
の間に100ÅのCr膜を介した場合は、図5(d)に
示すように、B−H特性はNiFe膜とCoCrPt膜
のそれぞれの磁化曲線の和として表されるため、静磁結
合が起きていることがわかる。更に、NiFe膜上に膜
厚100ÅのCoCrPt膜と膜厚100ÅのCr膜と
を交互に各5層形成した多層膜にした場合、B−H特性
は図5(a)に示すように、NiFe膜と直接接したC
oCrPt膜との間で強磁性結合した磁化曲線と残りの
CoCrPt膜の磁化曲線の和として表される。つま
り、一対の硬磁性層により強磁性結合と静磁結合を両方
同時に起こすことが可能である。Comparative Example 2 As a comparative example, a film thickness of 500Å
CoCrPt single layer film, coercive force 0.3 Oe film thickness 50
NiFe-CoCrPt composite film in which a CoCrPt film having a film thickness of 500Å is laminated on a NiFe layer having a film thickness of 0Å, a coercive force of 0.3.
Oe film thickness of 500Å on NiFe layer with 100Å film thickness of C
The B-H characteristics were measured for each of the three-layered films in which the r film was laminated and a CoCrPt film having a film thickness of 500 Å was further laminated, and the results are shown in FIGS. FIG. 5B shows N
It is a figure which showed the BH characteristic of the iFe-CoCrPt composite film, FIG.5 (c) is the figure which showed the BH characteristic which mediated the Cr film to the CoCrPt composite film, and FIG.5 (d) is CoCr.
It is a figure showing the BH characteristic of a multilayer film of a Pt film and a Cr film. When the hard magnetic layer is a CoCrPt single layer film having a film thickness of 500 Å, the coercive force is 1500 Oe as shown in FIG. 5 (b).
On the other hand, coercive force of 0.3 Oe and film thickness of 500ÅN
In the case of a composite film in which a CoCrPt film with a film thickness of 500 Å is formed on the iFe film, the coercive force is 2 as shown in FIG. 5 (c).
The value is 00 Oe, which is much smaller than that of a single layer film. Also, B-H
Since the curve shows a smooth shape, it can be seen that ferromagnetic coupling occurs between the NiFe film and the CoCrPt film. When a 100 Å Cr film is interposed between the NiFe film and the CoCrPt film, the BH characteristic is the sum of the magnetization curves of the NiFe film and the CoCrPt film, as shown in FIG. 5D. Since it is represented, it can be seen that magnetostatic coupling occurs. Furthermore, when a CoCrPt film having a film thickness of 100 Å and a Cr film having a film thickness of 100 Å are alternately formed on the NiFe film to form a multilayer film, five layers each have BH characteristics as shown in FIG. C in direct contact with the membrane
It is expressed as the sum of the magnetization curves of the ferromagnetic coupling with the oCrPt film and the remaining CoCrPt films. That is, it is possible to cause both ferromagnetic coupling and magnetostatic coupling simultaneously by the pair of hard magnetic layers.
【0022】(実験例3)実施例2と同じ構成のMR効
果型磁気ヘッドを10個用意し、3.5インチの磁気デ
ィスク装置を用いて、周速8m/s,記録周波数6MH
zで記録再生特性を測定した。測定方法は6MHzの信
号を連続して10回記録再生を行い、その平均値(x)
と、ばらつき(δ)を求め、記録再生の安定度の指標と
してδ/xを求めた。10個のMR効果型薄膜磁気ヘッ
ドについてのδ/xの平均値とばらつきを(表1)に示
す。(Experimental Example 3) Ten MR effect type magnetic heads having the same structure as in Example 2 were prepared and a peripheral speed of 8 m / s and a recording frequency of 6 MH were used by using a 3.5-inch magnetic disk device.
The recording / reproducing characteristics were measured by z. The measurement method was to record and reproduce 6MHz signals 10 times in succession, and average (x)
Then, the variation (δ) was obtained, and δ / x was obtained as an index of the stability of recording and reproduction. Table 1 shows the average value and variation of δ / x for ten MR effect thin film magnetic heads.
【0023】[0023]
【表1】 [Table 1]
【0024】(比較例3)比較例3として、縦バイアス
層の硬磁性層がCoCrPt単層膜でMR効果層と直接
接しているMR効果型薄膜磁気ヘッドを10個用意し、
実験例3と同一条件で記録再生特性試験を行った。その
結果を(表1)に示す。(Comparative Example 3) As Comparative Example 3, ten MR effect thin film magnetic heads in which the hard magnetic layer of the longitudinal bias layer is a CoCrPt single layer film and are in direct contact with the MR effect layer are prepared.
A recording / reproducing characteristic test was conducted under the same conditions as in Experimental Example 3. The results are shown in (Table 1).
【0025】(比較例4)比較例4として、実施例2と
同じ構成で硬磁性層をMR効果層上にCr膜を積層し、
その上にCoCrPt膜を積層して2層構造としMR効
果型薄膜磁気ヘッドを10個用意し、実験例2と同一条
件で記録再生特性試験を行い、その結果を(表1)に示
す。(Comparative Example 4) As Comparative Example 4, a hard magnetic layer having the same structure as in Example 2 was laminated with a Cr film on the MR effect layer,
Ten Co effect magnetic thin film magnetic heads were prepared by stacking a CoCrPt film on top of this and 10 recording and reproducing characteristics tests were conducted under the same conditions as in Experimental Example 2, and the results are shown in (Table 1).
【0026】以上のように本実施例によれば、強磁性膜
と非磁性膜とを交互に積層して構成された多層構造を有
する硬磁性層の強磁性膜をMR効果層に直接重ねること
により、強磁性結合と静磁結合の2つの効果によりMR
効果層の磁区を制御することができる。As described above, according to this embodiment, the ferromagnetic film of the hard magnetic layer having a multilayer structure constituted by alternately stacking the ferromagnetic film and the non-magnetic film is directly laminated on the MR effect layer. By the two effects of ferromagnetic coupling and magnetostatic coupling
The magnetic domain of the effect layer can be controlled.
【0027】尚、本実施例では、MR効果膜としてNi
Fe膜、硬磁性層としてCoCrPt膜を例示したが、
これらは材料を特に限定するものではなく、軟磁性膜に
NiCo系合金膜,アモルファス合金膜、また硬磁性層
にCoNi膜,CoCrTa膜等を用いて同様の効果を
得られることを確認している。また、非磁性膜としては
Cr膜だけでなく、Ta,Ti,W等であってもよい。
更に、層数を特に限定するものではないが、強磁性結合
及び静磁結合の両方を同時に利用するには硬磁性層の層
数は強磁性層の間に非磁性を介した3層以上必要であ
る。また、強磁性結合と静磁結合の割合は一層当たりの
硬磁性層の膜厚の変化により任意に選定できるため、個
々のMR効果型薄膜磁気ヘッドに適用でき、最適化を容
易に行うことが可能である。In this embodiment, Ni is used as the MR effect film.
Although the CoCrPt film is exemplified as the Fe film and the hard magnetic layer,
It is confirmed that the same effect can be obtained by using NiCo-based alloy film or amorphous alloy film as the soft magnetic film and CoNi film, CoCrTa film or the like as the hard magnetic layer without limiting the material in particular. . The non-magnetic film is not limited to the Cr film, but may be Ta, Ti, W or the like.
Further, although the number of layers is not particularly limited, in order to utilize both ferromagnetic coupling and magnetostatic coupling at the same time, the number of hard magnetic layers must be three or more with non-magnetism between the ferromagnetic layers. Is. Further, the ratio of the ferromagnetic coupling and the magnetostatic coupling can be arbitrarily selected by changing the film thickness of the hard magnetic layer per layer, so that it can be applied to each MR effect thin film magnetic head and the optimization can be easily performed. It is possible.
【0028】(実施例3)以下本発明の第3の実施例に
ついて、図面を参照しながら説明する。図6は本発明の
第3の実施例におけるMR効果型薄膜磁気ヘッドの要部
断面図である。実施例1と異なるのは、上部シールド層
11のリード層9側に硬磁性層8を設けMR効果層7と
上部シールド層11の両方の磁区制御を行うようにした
点である。(Embodiment 3) A third embodiment of the present invention will be described below with reference to the drawings. FIG. 6 is a sectional view of the essential parts of an MR effect type thin film magnetic head according to the third embodiment of the present invention. The difference from Example 1 is that the hard magnetic layer 8 is provided on the lead layer 9 side of the upper shield layer 11 to control the magnetic domains of both the MR effect layer 7 and the upper shield layer 11.
【0029】以上のように構成されたMR効果型薄膜磁
気ヘッドについて、記録再生特性試験を行った。A recording / reproducing characteristic test was conducted on the MR effect type thin film magnetic head constructed as described above.
【0030】(実験例4)実施例3と同じ構成のMR効
果型薄膜磁気ヘッドを10個用意し、実験例3と同一の
条件で記録再生特性を測定した。その結果を(表1)に
示した。(Experimental Example 4) Ten MR effect thin film magnetic heads having the same construction as in Example 3 were prepared, and the recording / reproducing characteristics were measured under the same conditions as in Experimental Example 3. The results are shown in (Table 1).
【0031】この(表1)から明らかなように、シール
ド層とMR効果層の両方の磁区制御を行うことにより、
バルクハウゼンノイズをより抑えられることがわかっ
た。As is clear from this (Table 1), by controlling the magnetic domains of both the shield layer and the MR effect layer,
It turns out that Barkhausen noise can be suppressed more.
【0032】以上のように本実施例によれば、多層構造
の硬磁性層によりMR効果層及びシールド層の両方の磁
区制御を行うことで、バルクハウゼンノイズのない最適
な特性を持つMR効果型薄膜磁気ヘッドを得ることがで
きる。As described above, according to the present embodiment, by controlling the magnetic domains of both the MR effect layer and the shield layer by the hard magnetic layer having the multilayer structure, the MR effect type having optimum characteristics without Barkhausen noise. A thin film magnetic head can be obtained.
【0033】(実施例4)以下本発明の第4の実施例に
ついて、図面を参照しながら説明する。図7は本発明の
第4の実施例におけるMR効果型薄膜磁気ヘッドの要部
断面図である。実施例1と異なるのは、リード層9の下
側の硬磁性層を配置せずに、上部シールド層11のリー
ド層9側に硬磁性層8を設け、上部シールド層11の磁
区を制御するようにした点である。(Embodiment 4) A fourth embodiment of the present invention will be described below with reference to the drawings. FIG. 7 is a cross-sectional view of an essential part of an MR effect thin film magnetic head according to the fourth embodiment of the present invention. The difference from Example 1 is that the hard magnetic layer below the lead layer 9 is not arranged, but the hard magnetic layer 8 is provided on the lead layer 9 side of the upper shield layer 11 to control the magnetic domain of the upper shield layer 11. That is the point.
【0034】以上のように構成されたMR効果型薄膜磁
気ヘッドについて、記録再生特性試験を行った。A recording / reproducing characteristic test was conducted on the MR effect type thin film magnetic head configured as described above.
【0035】(実験例5)実施例3と同じ構成のMR効
果型薄膜磁気ヘッドを10個用意し、実験例1と同一の
条件で記録再生特性試験を行い、その結果を(表1)に
示した。(Experimental Example 5) Ten MR effect type thin film magnetic heads having the same construction as in Example 3 were prepared, a recording / reproducing characteristic test was conducted under the same conditions as in Experimental Example 1, and the results are shown in (Table 1). Indicated.
【0036】この(表1)から明らかなように、上部シ
ールド層の磁区を制御することで、バルクハウゼンノイ
ズを抑えられることがわかった。As is clear from (Table 1), it was found that Barkhausen noise can be suppressed by controlling the magnetic domain of the upper shield layer.
【0037】以上のように本実施例によれば、上部シー
ルド層の磁区を制御することでバルクハウゼンノイズを
低減させることができる。また、上部シールド層の下に
硬磁性層を設けることで、プロセス上硬磁性層の保磁力
を高める下地層を厚くすることができるため単層膜でも
効果がある。この場合、上部シールド層と硬磁性層との
間に、Cr層等の非磁性膜を介して強磁性結合させない
方が効果的である。As described above, according to this embodiment, Barkhausen noise can be reduced by controlling the magnetic domain of the upper shield layer. Further, by providing the hard magnetic layer under the upper shield layer, the underlayer for increasing the coercive force of the hard magnetic layer can be made thicker in the process, so that a single layer film is also effective. In this case, it is more effective not to ferromagnetically couple the upper shield layer and the hard magnetic layer via a non-magnetic film such as a Cr layer.
【0038】[0038]
【発明の効果】以上のように本発明は、強磁性膜と非磁
性膜とを交互に積層された3層以上の多層構造を有する
硬磁性層により保磁力を高め、永続してバイアス磁界を
供給でき、磁区制御を安定して行うことができる。ま
た、強磁性結合と静磁結合を同時に利用できるため、M
R効果層及び/又は上部シールド層の磁区制御をより効
果的に行うことができバルクハウゼンノイズの低減を達
成でき、高性能で信頼性に優れたMR効果型薄膜磁気ヘ
ッドを実現できるものである。As described above, according to the present invention, the coercive force is enhanced by the hard magnetic layer having a multilayer structure of three or more layers in which the ferromagnetic film and the non-magnetic film are alternately laminated, and the bias magnetic field is permanently applied. The magnetic field can be supplied and the magnetic domain can be stably controlled. Also, since ferromagnetic coupling and magnetostatic coupling can be used simultaneously, M
The magnetic domain of the R effect layer and / or the upper shield layer can be more effectively controlled, the Barkhausen noise can be reduced, and the MR effect type thin film magnetic head having high performance and excellent reliability can be realized. .
【図1】本発明の第1の実施例におけるMR効果型薄膜
磁気ヘッドの要部断面図FIG. 1 is a sectional view of an essential part of an MR effect thin film magnetic head in a first embodiment of the invention.
【図2】図1のA部分の拡大図FIG. 2 is an enlarged view of part A of FIG.
【図3】Cr膜の膜厚と保磁力の関係を示す図FIG. 3 is a diagram showing the relationship between the thickness of the Cr film and the coercive force.
【図4】本発明の第2の実施例におけるMR効果型薄膜
磁気ヘッドの縦バイアス層の要部断面拡大図FIG. 4 is an enlarged cross-sectional view of an essential part of a vertical bias layer of an MR effect thin film magnetic head according to a second embodiment of the present invention.
【図5】(a)CoCrPt膜とCr膜の5層膜のB−
H特性を示した図 (b)NiFe−CoCrPt複合膜のB−H特性を示
した図 (c)CoCrPt複合膜にCr膜を介したB−H特性
を示した図 (d)CoCrPt膜とCr膜の多層膜のB−H特性を
示した図FIG. 5 (a) B- of a five-layer film of CoCrPt film and Cr film.
Figure showing H characteristics (b) Figure showing BH characteristics of NiFe-CoCrPt composite film (c) Figure showing BH characteristics of CoCrPt composite film with Cr film interposed (d) CoCrPt film and Cr The figure which showed BH characteristic of the multilayer film of a film
【図6】本発明の第3の実施例におけるMR効果型薄膜
磁気ヘッドの要部断面図FIG. 6 is a sectional view of an essential part of an MR effect thin film magnetic head in a third embodiment of the invention.
【図7】本発明の第4の実施例におけるMR効果型薄膜
磁気ヘッドの要部断面図FIG. 7 is a cross-sectional view of an essential part of an MR effect thin film magnetic head according to a fourth embodiment of the present invention.
1 基板 2,12 絶縁層 3 下部シールド層 4 下部再生ギャップ 5 横バイアス層 6 非磁性層 7 MR効果層 8,8′ 硬磁性層 8a Cr膜 8b CoCrPt膜 9 リード層 10 上部再生ギャップ 11 上部シールド層 13 下部コア 14 記録ギャップ 15 上部コア 16 保護層 1 Substrate 2, 12 Insulating Layer 3 Lower Shield Layer 4 Lower Reproducing Gap 5 Transverse Bias Layer 6 Non-Magnetic Layer 7 MR Effect Layer 8, 8'Hard Magnetic Layer 8a Cr Film 8b CoCrPt Film 9 Lead Layer 10 Upper Reproducing Gap 11 Upper Shield Layer 13 Lower core 14 Recording gap 15 Upper core 16 Protective layer
Claims (4)
横バイアス層,磁気抵抗効果層,硬磁性層,リード層等
を有する再生感知部を備えた磁気抵抗効果型薄膜磁気ヘ
ッドであって、前記硬磁性層が強磁性膜と非磁性膜が交
互に積層された3層以上の多層構造を有することを特徴
とする磁気抵抗効果型薄膜磁気ヘッド。1. A magnetoresistive effect thin film magnetic head comprising a reproducing sensing part having a lateral bias layer, a magnetoresistive effect layer, a hard magnetic layer, a lead layer, etc. between a lower shield layer and an upper shield layer. A magnetoresistive effect thin film magnetic head, wherein the hard magnetic layer has a multilayer structure of three or more layers in which ferromagnetic films and nonmagnetic films are alternately laminated.
リード層側及び/又は上部シールド層のリード層側に直
接接して形成されていることを特徴とする請求項1に記
載の磁気抵抗効果型薄膜磁気ヘッド。2. The magnetic according to claim 1, wherein the hard magnetic layer is formed in direct contact with the lead layer side of the magnetoresistive effect layer and / or the lead layer side of the upper shield layer. Resistive thin film magnetic head.
又は上部シールド層と接触している層が強磁性膜である
ことを特徴とする請求項2に記載の磁気抵抗効果型薄膜
磁気ヘッド。3. The magnetoresistive effect layer of the hard magnetic layer and / or
The magnetoresistive thin-film magnetic head according to claim 2, wherein the layer in contact with the upper shield layer is a ferromagnetic film.
横バイアス層,磁気抵抗効果層,硬磁性層,リード層等
を有する再生感知部を備えた磁気抵抗効果型薄膜磁気ヘ
ッドであって、前記硬磁性層が単層の硬磁性層で、かつ
前記上部シールド層のリード層側に非磁性膜を介して形
成されていることを特徴とする磁気抵抗効果型薄膜磁気
ヘッド。4. A magnetoresistive effect thin film magnetic head comprising a reproducing sensing part having a lateral bias layer, a magnetoresistive effect layer, a hard magnetic layer, a lead layer, etc. between a lower shield layer and an upper shield layer. The magnetoresistive effect thin film magnetic head, wherein the hard magnetic layer is a single hard magnetic layer and is formed on the lead layer side of the upper shield layer with a nonmagnetic film interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6003937A JPH07210828A (en) | 1994-01-19 | 1994-01-19 | Magnetoresistive thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6003937A JPH07210828A (en) | 1994-01-19 | 1994-01-19 | Magnetoresistive thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07210828A true JPH07210828A (en) | 1995-08-11 |
Family
ID=11571053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6003937A Pending JPH07210828A (en) | 1994-01-19 | 1994-01-19 | Magnetoresistive thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07210828A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7268985B2 (en) | 2004-05-28 | 2007-09-11 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic head having a layered hard bias layer exhibiting reduced noise |
| US12220768B2 (en) | 2019-06-13 | 2025-02-11 | Illinois Tool Works Inc. | Solder paste bead recovery system and method |
-
1994
- 1994-01-19 JP JP6003937A patent/JPH07210828A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7268985B2 (en) | 2004-05-28 | 2007-09-11 | Hitachi Global Storage Technologies Netherlands, B.V. | Magnetic head having a layered hard bias layer exhibiting reduced noise |
| US12220768B2 (en) | 2019-06-13 | 2025-02-11 | Illinois Tool Works Inc. | Solder paste bead recovery system and method |
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