JPH0721998A - Incandescent light bulb - Google Patents
Incandescent light bulbInfo
- Publication number
- JPH0721998A JPH0721998A JP16565693A JP16565693A JPH0721998A JP H0721998 A JPH0721998 A JP H0721998A JP 16565693 A JP16565693 A JP 16565693A JP 16565693 A JP16565693 A JP 16565693A JP H0721998 A JPH0721998 A JP H0721998A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- infrared
- index layer
- film thickness
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
(57)【要約】
【目的】ランプ効率をより一層向上させることができる
白熱電球を提供する。
【構成】光学膜厚がともに２１０〜３１０ｎｍである高
屈折率層と低屈折率層とを交互に積層してなる赤外線反
射膜３を内外面の少なくとも一方に設けたバルブ１と、
このバルブ１の中心に配置されたフィラメント２とを備
え、赤外線反射膜の最上層となる低屈折率層の光学膜厚
が１／２×（２１０〜３１０）ｎｍであり、かつ高屈折
率層の光学膜厚のうち少なくとも１層が２×（２１０〜
３１０）ｎｍとしている。
(57) [Abstract] [Purpose] To provide an incandescent lamp capable of further improving the lamp efficiency. A bulb 1 having an infrared reflection film 3 having an optical film thickness of 210 to 310 nm and a high refractive index layer and a low refractive index layer alternately laminated on at least one of the inner and outer surfaces thereof,
The filament 2 arranged at the center of the bulb 1 is provided, and the optical film thickness of the low refractive index layer which is the uppermost layer of the infrared reflecting film is 1/2 × (210 to 310) nm and the high refractive index layer. Of the optical film thickness of at least one layer is 2 × (210
310) nm.
Description
【０００１】[0001]
【産業上の利用分野】この発明は、白熱電球に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an incandescent light bulb.
【０００２】[0002]
【従来の技術】白熱電球は、点灯回路が不要で、しかも
その構造が簡略であることから、多くの用途に使われて
いる。しかし、フィラメントより放射されるエネルギー
の約８０％は赤外線であるため、入力電力の利用効率が
悪く、しかも被照射物の温度を上げてしまう欠点を持っ
ている。2. Description of the Related Art Incandescent light bulbs are used in many applications because they do not require a lighting circuit and have a simple structure. However, since about 80% of the energy radiated from the filament is infrared rays, it has a drawback that the utilization efficiency of the input power is poor and that the temperature of the irradiated object is raised.
【０００３】これに対して、ガラスバルブの外面に２種
類の金属酸化物の膜からなる赤外線反射膜を形成し、赤
外線をガラスバルブ内に戻してフィラメントを再加熱
し、これにより入力電力の低減を図ったものがあった
（特開昭５７−１２８４５５号公報）。この従来の白熱
電球の赤外線反射膜は、１／４λ干渉フィルタであり、
そのλ波長をフィラメントの赤外放射エネルギーのピー
ク波長（１０００ｎｍ近傍）に合わせている。On the other hand, an infrared reflection film composed of two kinds of metal oxide films is formed on the outer surface of the glass bulb, and infrared rays are returned to the glass bulb to reheat the filament, thereby reducing the input power. There has been a plan (JP-A-57-128455). The infrared reflective film of this conventional incandescent light bulb is a 1/4 λ interference filter,
The λ wavelength is adjusted to the peak wavelength (near 1000 nm) of infrared radiation energy of the filament.
【０００４】[0004]
【発明が解決しようとする課題】しかし、この白熱電球
では、赤外線の反射率は良好であるが、赤外線の反射領
域が狭く、しかも可視光の透過率が考慮されていないの
で、ランプ効率は必ずしも充分ではなかった。したがっ
て、この発明の目的は、ランプ効率をより一層向上させ
ることができる白熱電球を提供することである。However, in this incandescent light bulb, although the reflectance of infrared rays is good, the infrared reflection area is narrow and the transmittance of visible light is not taken into consideration. Therefore, the lamp efficiency is not always required. It wasn't enough. Therefore, an object of the present invention is to provide an incandescent light bulb that can further improve the lamp efficiency.
【０００５】[0005]
【課題を解決するための手段】この発明の白熱電球は、
光学膜厚がともに２１０〜３１０ｎｍである高屈折率層
と低屈折率層とを交互に積層してなる赤外線反射膜を内
外面の少なくとも一方に設けたバルブと、このバルブの
中心に配置されたフィラメントとを備え、赤外線反射膜
の最終層となる低屈折率層の光学膜厚が１／２×（２１
０〜３１０）ｎｍであり、かつ高屈折率層の光学膜厚の
うち少なくとも１層が２×（２１０〜３１０）ｎｍであ
ることを特徴とするものである。The incandescent light bulb of the present invention comprises:
A valve having an infrared reflection film, which has an optical film thickness of 210 to 310 nm and a high refractive index layer and a low refractive index layer alternately laminated, provided on at least one of the inner and outer surfaces, and is disposed at the center of the valve. And a low refractive index layer, which is a final layer of the infrared reflecting film, has an optical film thickness of ½ × (21
0 to 310) nm, and at least one layer of the high refractive index layer has an optical thickness of 2 × (210 to 310) nm.
【０００６】[0006]
【作用】この発明の構成によれば、フィラメントに電力
を供給して加熱するとフィラメントより放射エネルギー
が放射される。そのうち可視光は赤外線反射膜を透過
し、赤外線は赤外線反射膜を反射してフィラメントを再
加熱する。この場合、赤外線反射膜は、赤外線反射領域
を拡大できるとともに、可視光の透過率と赤外線の反射
率とを向上できるので、ランプ効率をより一層向上する
ことができる。According to the structure of the present invention, when electric power is supplied to the filament to heat it, radiant energy is emitted from the filament. Among them, visible light passes through the infrared reflection film, and infrared rays reflect the infrared reflection film to reheat the filament. In this case, the infrared reflection film can expand the infrared reflection region and can improve the transmittance of visible light and the reflectance of infrared light, so that the lamp efficiency can be further improved.
【０００７】[0007]
【実施例】この発明の一実施例について図１ないし図３
を用いて説明する。図１は、この発明の一実施例のハロ
ゲン電球の構成の概略を示したものである。図１におい
て、石英製のバルブ１内にその中心軸に一致するように
フィラメント２が設けられている。フィラメント２の一
端部はリード線４に接続され、他端部はリード線５に接
続されてバルブ１の中心軸上に支持されている。リード
線４，５はステムガラス６で一体化されている。またバ
ルブ１の外面に赤外線反射膜３が形成され、バルブ１内
にはアルゴン等の不活性ガスとともに所要のハロゲンが
封入されている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention is shown in FIGS.
Will be explained. FIG. 1 shows the outline of the configuration of a halogen bulb according to an embodiment of the present invention. In FIG. 1, a filament 2 is provided in a quartz bulb 1 so as to coincide with the central axis thereof. One end of the filament 2 is connected to the lead wire 4, and the other end is connected to the lead wire 5 and is supported on the central axis of the bulb 1. The lead wires 4 and 5 are integrated by a stem glass 6. An infrared reflecting film 3 is formed on the outer surface of the bulb 1, and a required halogen is enclosed in the bulb 1 together with an inert gas such as argon.
【０００８】赤外線反射膜３は図２に示すように、高屈
折率層Ｈと低屈折率層Ｌとを交互に積層し、最終層を低
屈折率層Ｌとしている。高屈折率層Ｈは、酸化チタン
（ＴｉＯ2 ），酸化タンタル（Ｔａ2 Ｏ5 ）, 酸化ジル
コニウム（ＺｒＯ2 ）, 硫化亜鉛（ＺｎＳ）等からな
る。低屈折率層Ｌは、酸化シリコン（ＳｉＯ2 ）, ふっ
化マグネシウム（ＭｇＦ2 ）からなる。低屈折率層Ｌの
光学膜厚は最終層を除く層が２１０〜３１０ｎｍであ
り、かつ最終層の光学膜厚が（１／２）×（２１０〜３
１０）ｎｍ＝１０５〜１５０ｎｍである。また高屈折率
層Ｈの光学膜厚のうち、少なくとも１層が２×（２１０
〜３１０）ｎｍ＝４２０〜６２０ｎｍ、残りの層の光学
膜厚がいずれも２１０〜３１０ｎｍである。As shown in FIG. 2, the infrared reflecting film 3 has high refractive index layers H and low refractive index layers L alternately laminated, and a final layer is a low refractive index layer L. The high refractive index layer H is made of titanium oxide (TiO 2 ), tantalum oxide (Ta 2 O 5 ), zirconium oxide (ZrO 2 ), zinc sulfide (ZnS), or the like. The low refractive index layer L is made of silicon oxide (SiO 2 ) and magnesium fluoride (MgF 2 ). The optical film thickness of the low refractive index layer L is 210 to 310 nm in the layers other than the final layer, and the optical film thickness of the final layer is (1/2) × (210-3).
10) nm = 105 to 150 nm. Further, in the optical film thickness of the high refractive index layer H, at least one layer is 2 × (210
˜310) nm = 420 to 620 nm, and the remaining layers have optical thicknesses of 210 to 310 nm.
【０００９】つぎにこの赤外線反射膜３の形成方法につ
いて述べる。高屈折率層ＨとしてはＴｉＯ2 を用いた。
このＴｉＯ2 のテトラブチルチタネートをエタノール系
の溶剤に溶かした液にバルブ１を浸漬し、管状体の部分
は一定速度で引き上げ、球体部分は引き上げ速度を変化
させることにより均一な膜を塗布し、乾燥・焼成を行
う。また低屈折率層ＬとしてはＳｉＯ2 を用いた。この
ＳｉＯ2 のテトラエチルシリケートをエタノール系の溶
剤に溶かした液にバルブ１を浸漬し、高屈折率層Ｈの場
合と同じように引き上げ、乾燥・焼成を行う。この工程
を繰り返して赤外線反射膜３を形成する。各層の膜厚
は、溶液の濃度と引き上げ速度によって決定される。Next, a method of forming the infrared reflecting film 3 will be described. TiO 2 was used as the high refractive index layer H.
The valve 1 is immersed in a solution of TiO 2 tetrabutyl titanate dissolved in an ethanol solvent, the tubular portion is pulled up at a constant speed, and the spherical portion is coated with a uniform film by changing the pulling speed, Dry and bake. Further, as the low refractive index layer L, SiO 2 was used. The valve 1 is dipped in a solution of this tetraethyl silicate of SiO 2 dissolved in an ethanol-based solvent, pulled up in the same manner as in the case of the high refractive index layer H, and dried and baked. This process is repeated to form the infrared reflective film 3. The film thickness of each layer is determined by the concentration of the solution and the pulling rate.
【００１０】つぎにこの電球の作用について説明する。
フィラメント２より放出されるエネルギーは、可視光
（波長３８０〜７８０ｎｍ）とともに多量の赤外線を放
出し、この赤外線放射のピークは波長８００〜１２００
ｎｍの範囲にある。フィラメント２から放射された光の
うち、可視光は赤外線反射膜３を透過してバルブ１外に
放射され、赤外線は赤外線反射膜３により反射されフィ
ラメント２に帰還してフィラメント２を加熱し、このた
め可視光の放射が増加して高効率となる。Next, the operation of this light bulb will be described.
The energy emitted from the filament 2 emits a large amount of infrared rays together with visible light (wavelength 380 to 780 nm), and the peak of this infrared emission is wavelengths 800 to 1200.
in the nm range. Of the light emitted from the filament 2, visible light passes through the infrared reflection film 3 and is emitted to the outside of the bulb 1. The infrared light is reflected by the infrared reflection film 3 and returns to the filament 2 to heat the filament 2. Therefore, the emission of visible light increases and the efficiency becomes high.
【００１１】ここで、赤外線反射膜３は可視光領域にお
いて高透過率を示し、かつ赤外領域、特に近赤外におい
て高反射率を示すのが好ましいが、どちらか一方をよく
すると他方が悪くなる関係にある。しかし、この発明に
おいて上述のように低屈折率層Ｌおよび高屈折率層Ｈの
光学膜厚を２１０〜３１０ｎｍとし、最上層の光学膜厚
は１０５〜１５０ｎｍ、かつ高屈折率層（Ｈ）のうち一
部の光学膜厚を４２０〜６２０ｎｍとすることによっ
て、近赤外線反射率および可視光透過率を両方ともに向
上させ、ランプの効率を上昇させることができたもので
ある。Here, it is preferable that the infrared reflecting film 3 has a high transmittance in the visible light region and a high reflectance in the infrared region, especially in the near infrared region, but if either one is improved, the other is bad. There is a relationship. However, in the present invention, as described above, the optical film thickness of the low refractive index layer L and the high refractive index layer H is 210 to 310 nm, the optical film thickness of the uppermost layer is 105 to 150 nm, and the optical film thickness of the high refractive index layer (H) is By setting a part of the optical film thickness to 420 to 620 nm, both the near-infrared reflectance and the visible light transmittance can be improved and the lamp efficiency can be increased.
【００１２】下記の表にこの実施例と従来例の赤外線反
射膜３の構成を示す。なお、膜厚は幾何学的膜厚であ
る。The following table shows the construction of the infrared reflecting film 3 of this embodiment and the conventional example. The film thickness is a geometric film thickness.
【００１３】[0013]
【表１】 [Table 1]
【００１４】つぎにこの実施例と従来例の分光透過率曲
線を図３に示す。実線は実施例、点線は従来例である。
図３から明らかなように、実施例の赤外線領域の透過率
が低くい範囲が広く、また反射のピークが近赤外部にも
現れるとともに、可視光領域の透過率が低下せず、赤外
線領域の反射率も低下していないことがわかる。また、
実施例の赤外線反射膜３を用い、図１に示す構造を有す
る１１０Ｖ，８５Ｗ定格のハロゲン電球を製作し、ラン
プ特性を調べた。その結果、従来例に示す赤外線反射膜
を有する１１０Ｖ，８５Ｗ定格のハロゲン電球の効率を
基準として実施例と比較すると、この発明の実施例は約
２０％の効率の上昇が得られることが認められた。Next, FIG. 3 shows the spectral transmittance curves of this example and the conventional example. The solid line is the example and the dotted line is the conventional example.
As is apparent from FIG. 3, the range of low transmittance in the infrared region of the example is wide, the reflection peak appears in the near infrared region, and the transmittance of the visible light region does not decrease. It can be seen that the reflectance is not lowered. Also,
Using the infrared reflective film 3 of the example, a 110 V, 85 W rated halogen light bulb having the structure shown in FIG. 1 was manufactured, and the lamp characteristics were examined. As a result, it is recognized that the efficiency of the embodiment of the present invention can be increased by about 20% when compared with the embodiment based on the efficiency of the halogen bulb of 110V, 85W rating having the infrared reflecting film shown in the conventional example. It was
【００１５】なお、この発明において、赤外線反射膜３
の各層の光学膜厚の基準となる２１０〜３１０ｎｍがこ
の範囲にある限り放射される光は、従来品と同様な光色
を示し、上述の効果に大差はない。また赤外線反射膜３
はバルブ１の外面に限らず、内面または内外面に形成す
ることができる。バルブ１の形状も赤外線反射膜３から
反射する赤外線がフィラメント２に帰還するような形状
であればどのような形状でもよい。In the present invention, the infrared reflecting film 3
As long as 210 to 310 nm, which is the reference for the optical film thickness of each layer, is within this range, the emitted light exhibits the same light color as the conventional product, and there is no great difference in the above effects. Infrared reflection film 3
Can be formed not only on the outer surface of the valve 1 but also on the inner surface or the inner and outer surfaces thereof. The bulb 1 may have any shape as long as infrared rays reflected from the infrared reflection film 3 return to the filament 2.
【００１６】[0016]
【発明の効果】この発明の白熱電球は、バルブの内外面
の少なくとも一方に設ける赤外線反射膜として、光学膜
厚がともに２１０〜３１０ｎｍである高屈折率層と低屈
折率層とを交互に積層してなり、赤外線反射膜の最終層
である低屈折率層の光学膜厚が１／２×（２１０〜３１
０）ｎｍであり、かつ高屈折率層の光学膜厚のうち少な
くとも１層が２×（２１０〜３１０）ｎｍからなるもの
を用いることにより、赤外線反射膜の赤外線反射領域を
拡大できるとともに、可視光の透過率と赤外線の反射率
とを向上できるので、ランプ効率をより一層向上するこ
とができるという効果がある。EFFECTS OF THE INVENTION The incandescent light bulb of the present invention comprises, as an infrared reflecting film provided on at least one of the inner and outer surfaces of a bulb, high refractive index layers and low refractive index layers having an optical film thickness of 210 to 310 nm alternately laminated. The optical film thickness of the low refractive index layer, which is the final layer of the infrared reflective film, is 1/2 × (210 to 31).
0) nm and at least one of the optical film thicknesses of the high refractive index layer is 2 × (210 to 310) nm, the infrared reflection region of the infrared reflection film can be expanded and visible Since the light transmittance and the infrared reflectance can be improved, the lamp efficiency can be further improved.
【図１】この発明の一実施例の白熱電球の一部断面図で
ある。FIG. 1 is a partial sectional view of an incandescent lamp according to an embodiment of the present invention.
【図２】同白熱電球の赤外線反射膜の拡大断面図であ
る。FIG. 2 is an enlarged sectional view of an infrared reflection film of the incandescent lamp.
【図３】赤外線反射膜の分光透過率曲線図である。FIG. 3 is a spectral transmittance curve diagram of an infrared reflective film.
１ バルブ ２ フィラメント ３ 赤外線反射膜 1 bulb 2 filament 3 infrared reflective film
Claims (1)
ある高屈折率層と低屈折率層とを交互に積層してなる赤
外線反射膜を内外面の少なくとも一方に設けたバルブ
と、このバルブの中心に配置されたフィラメントとを備
え、前記赤外線反射膜の最終層となる前記低屈折率層の
光学膜厚が１／２×（２１０〜３１０）ｎｍであり、か
つ前記高屈折率層の光学膜厚のうち少なくとも１層が２
×（２１０〜３１０）ｎｍであることを特徴とする白熱
電球。1. A valve having an infrared reflection film, which has an optical film thickness of 210 nm to 310 nm and a high refractive index layer and a low refractive index layer, which are alternately laminated, provided on at least one of the inner and outer surfaces, and a valve of the valve. An optical film thickness of the low refractive index layer, which is a final layer of the infrared reflecting film, is ½ × (210 to 310) nm, and a filament of the high refractive index layer. At least one layer of the film thickness is 2
An incandescent light bulb having a size of x (210 to 310) nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16565693A JP3153050B2 (en) | 1993-07-05 | 1993-07-05 | Incandescent light bulb |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16565693A JP3153050B2 (en) | 1993-07-05 | 1993-07-05 | Incandescent light bulb |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0721998A true JPH0721998A (en) | 1995-01-24 |
| JP3153050B2 JP3153050B2 (en) | 2001-04-03 |
Family
ID=15816509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16565693A Expired - Lifetime JP3153050B2 (en) | 1993-07-05 | 1993-07-05 | Incandescent light bulb |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3153050B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006238093A (en) * | 2005-02-25 | 2006-09-07 | Sony Corp | Imaging device |
| WO2018170117A1 (en) * | 2017-03-15 | 2018-09-20 | Applied Materials, Inc. | Additive manufacturing having energy beam and lamp array |
-
1993
- 1993-07-05 JP JP16565693A patent/JP3153050B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006238093A (en) * | 2005-02-25 | 2006-09-07 | Sony Corp | Imaging device |
| WO2018170117A1 (en) * | 2017-03-15 | 2018-09-20 | Applied Materials, Inc. | Additive manufacturing having energy beam and lamp array |
| US11117194B2 (en) | 2017-03-15 | 2021-09-14 | Applied Materials, Inc. | Additive manufacturing having energy beam and lamp array |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3153050B2 (en) | 2001-04-03 |
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