JPH0722465A - Semiconductor device mounting method - Google Patents
Semiconductor device mounting methodInfo
- Publication number
- JPH0722465A JPH0722465A JP5150079A JP15007993A JPH0722465A JP H0722465 A JPH0722465 A JP H0722465A JP 5150079 A JP5150079 A JP 5150079A JP 15007993 A JP15007993 A JP 15007993A JP H0722465 A JPH0722465 A JP H0722465A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- circuit board
- thick film
- electrode
- conductive paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/011—Apparatus therefor
- H10W72/0113—Apparatus for manufacturing die-attach connectors
Landscapes
- Die Bonding (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】
【目的】 各種電気機器に使用される半導体装置と回路
基板との電気的接続に関し、特に半導体装置をフェース
ダウンにより実装する際に、配線導体とのマッチング、
歩留り、無洗浄化を解決し、汎用性が高くかつ信頼性の
高い実装方法を提供することを目的とする。
【構成】 半導体装置１の電極パッド部２上に形成され
たバンプ電極３と、回路基板６上に形成された厚膜端子
電極部５とを、銀・ガラス・有機バインダーから構成さ
れた導電性ペースト４で接着する。導電性ペーストの脱
バインダー、焼成処理によって、ガラス分を含む厚膜端
子電極部５とのマッチングがとれた強固な接続が得られ
る。
(57) [Abstract] [Purpose] Regarding electrical connection between a semiconductor device used in various electric devices and a circuit board, particularly when mounting the semiconductor device face down, matching with a wiring conductor,
It is an object of the present invention to solve the problems of yield and no cleaning, and to provide a mounting method having high versatility and high reliability. A bump electrode 3 formed on an electrode pad portion 2 of a semiconductor device 1 and a thick film terminal electrode portion 5 formed on a circuit board 6 are made of a conductive material composed of silver, glass and an organic binder. Bond with paste 4. By the binder removal of the conductive paste and the firing treatment, a strong connection that matches the thick film terminal electrode portion 5 containing the glass component can be obtained.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置と回路基板
上の厚膜端子電極部との電気的接続に関するものであ
り、特に、導電性ペーストを用いたフェースダウンボン
ディング法に係る半導体装置の実装方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrical connection between a semiconductor device and a thick film terminal electrode portion on a circuit board, and more particularly to a semiconductor device according to a face-down bonding method using a conductive paste. It concerns the implementation method.
【０００２】[0002]
【従来の技術】従来、電子部品の接続端子と回路基板上
の厚膜回路パターン端子との接続には半田付けがよく利
用されていたが、近年、例えばＩＣフラットパッケージ
等の小型化と、接続端子の増加により接続端子間、いわ
ゆるピッチ間隔が次第に狭くなり、従来の半田付け技術
で対処することが次第に困難になってきた。そこで、裸
の半導体装置を回路基板上の厚膜端子電極部に直付けし
て実装面積の効率的使用を図ろうとする方法が考案され
てきた。2. Description of the Related Art Conventionally, soldering has often been used to connect a connection terminal of an electronic component and a thick film circuit pattern terminal on a circuit board. Due to the increase in the number of terminals, the so-called pitch interval between the connection terminals is gradually narrowed, and it has become increasingly difficult to cope with this with conventional soldering techniques. Therefore, a method has been devised in which a bare semiconductor device is directly attached to a thick film terminal electrode portion on a circuit board so as to efficiently use a mounting area.
【０００３】以下図面を参照しながら、上述した従来の
半田バンプによる半導体装置の実装方法の一例について
説明する。図３は従来の半田バンプによる半導体装置の
概略説明図である。図３において、７は半導体装置であ
り、８は半田バンプ電極である。９は厚膜端子電極部で
あり、１０は回路基板である。An example of the conventional method for mounting a semiconductor device using the solder bumps will be described below with reference to the drawings. FIG. 3 is a schematic explanatory view of a conventional semiconductor device using solder bumps. In FIG. 3, 7 is a semiconductor device, and 8 is a solder bump electrode. Reference numeral 9 is a thick film terminal electrode portion, and 10 is a circuit board.
【０００４】以上のように構成された半田バンプによる
半導体装置について、以下その実装方法の概略について
説明する。まず、半導体装置７のＡｌからなる電極パッ
ド部に予め半田バンプ電極８をメッキ等により形成して
おき、この半導体装置７をフェースダウウンで回路基板
１０の厚膜端子電極部９に位置合わせを行った後、２０
０〜３００℃の高温に加熱して半田バンプ電極８を溶融
し、回路基板１０の厚膜端子電極部９に融着させる事に
よって図３に示す半導体装置を得るものである。With respect to the semiconductor device having the solder bumps configured as described above, an outline of the mounting method will be described below. First, the solder bump electrode 8 is formed in advance on the electrode pad portion made of Al of the semiconductor device 7 by plating or the like, and the semiconductor device 7 is aligned with the thick film terminal electrode portion 9 of the circuit board 10 by face down. After going 20
The semiconductor device shown in FIG. 3 is obtained by heating to a high temperature of 0 to 300 ° C. to melt the solder bump electrode 8 and fuse it to the thick film terminal electrode portion 9 of the circuit board 10.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら上記のよ
うな半田バンプ電極による半導体装置においては、 （１）半田による接続のために回路基板側の厚膜端子電
極部の導電材料が半田接続可能なものである必要があ
り、汎用性に欠ける。 （２）半田バンプ電極を形成する半田が加熱溶融する際
に広がり、隣接とショートが発生する危険がある。 （３）半田を使用するため、フラックス成分の洗浄が必
要である。 などといった課題を有していた。However, in the semiconductor device using the solder bump electrodes as described above, (1) the conductive material of the thick film terminal electrode portion on the circuit board side can be connected by soldering for connection by soldering. It needs to be and lacks versatility. (2) There is a risk that the solder forming the solder bump electrode spreads when heated and melted, causing short-circuit with the adjacent. (3) Since solder is used, it is necessary to clean the flux component. Had problems such as.
【０００６】本発明は上記課題に鑑みてなされたもので
あり、その目的とするところは、半導体装置と回路基板
とを信頼性の良い電気的な接続を行う事のできる半導体
装置の実装方法を提供するものである。The present invention has been made in view of the above problems, and an object of the present invention is to provide a mounting method of a semiconductor device capable of reliable and electrical connection between the semiconductor device and a circuit board. It is provided.
【０００７】[0007]
【課題を解決するための手段】上記課題を解決するため
本発明の半導体装置の実装方法は、半導体装置の電極パ
ッド上にバンプ電極を備え、ガラスを含む無機物の導電
性材料と有機バインダーとからなる導電性ペーストを介
して、前記バンプ電極と回路基板上の厚膜端子電極部と
を接着し、前記有機バインダーの脱バインダー及び焼成
処理により前記導電性ペーストを焼結させて、前記バン
プ電極と厚膜端子電極部とを固定することを特徴とする
ものである。In order to solve the above problems, a method for mounting a semiconductor device according to the present invention comprises a bump electrode on an electrode pad of the semiconductor device, and an inorganic conductive material containing glass and an organic binder. The bump electrode and the thick film terminal electrode portion on the circuit board are bonded via the conductive paste, and the conductive paste is sintered by debinding and firing treatment of the organic binder to form the bump electrode. The thick film terminal electrode portion is fixed.
【０００８】[0008]
【作用】上記方法によれば、バンプ電極と回路基板の電
極部とを接続する際に、従来のような半田の溶融やフラ
ックスの洗浄等の問題はなく、また導電性ペースト中に
ガラス分を含んでいるため、半田のように回路基板上の
厚膜電極端子の電極材料を選ばず汎用性に富むものであ
る。According to the above method, when connecting the bump electrode and the electrode portion of the circuit board, there is no problem such as melting of solder and cleaning of flux as in the conventional case, and the glass component is contained in the conductive paste. Since it contains solder, it is versatile and does not select the electrode material of the thick film electrode terminal on the circuit board like solder.
【０００９】[0009]
【実施例】以下、本発明の一実施例の半導体装置の実装
方法について、図面を参照しながら説明する。図１は本
発明の一実施例における半導体装置の接続部の拡大図で
あり、図２は、本発明の一実施例における半導体装置の
概略説明図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device mounting method according to an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is an enlarged view of a connecting portion of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a schematic explanatory view of a semiconductor device according to an embodiment of the present invention.
【００１０】図１及び図２において、１は半導体装置で
あり、２は電極パッド部である。３はＡｕからなるバン
プ電極であり、４は銀・ガラス・有機バインダーから構
成される導電性ペーストである。５は厚膜端子電極部で
あり、６は回路基板である。In FIGS. 1 and 2, 1 is a semiconductor device, and 2 is an electrode pad portion. 3 is a bump electrode made of Au, and 4 is a conductive paste made of silver, glass and an organic binder. Reference numeral 5 is a thick film terminal electrode portion, and 6 is a circuit board.
【００１１】以上のように構成された半導体装置につい
て、以下図面を用いて説明する。まず、半導体装置１の
電極パッド部２上に予めメッキ等によりバンプ電極３を
形成しておき、このバンプ電極３に転写や印刷によって
銀・ガラス・有機バインダーからなる導電性ペースト４
を形成する。The semiconductor device configured as described above will be described below with reference to the drawings. First, the bump electrode 3 is previously formed on the electrode pad portion 2 of the semiconductor device 1 by plating or the like, and the conductive paste 4 made of silver, glass, or an organic binder is transferred to the bump electrode 3 by transfer or printing.
To form.
【００１２】その後、この半導体装置１をフェースダウ
ンで回路基板６の厚膜端子電極部５に位置合わせを行
い、回路基板６上に半導体装置１をマウントした後、乾
燥・脱バインダー・焼成処理により導電性ペースト４を
焼結させる事によって、図１及び図２に示すように、半
導体装置１がバンプ電極３及び焼結した導電性ペースト
４を介して回路基板６の厚膜端子電極５に電気的に接続
される。Thereafter, the semiconductor device 1 is positioned face down on the thick film terminal electrode portion 5 of the circuit board 6, and after mounting the semiconductor device 1 on the circuit board 6, the semiconductor device 1 is dried, debindered, and baked. By sintering the conductive paste 4, as shown in FIGS. 1 and 2, the semiconductor device 1 is electrically connected to the thick film terminal electrode 5 of the circuit board 6 through the bump electrode 3 and the sintered conductive paste 4. Connected.
【００１３】一般に厚膜回路基板においては、その導体
材料にガラスが含まれたものが広く使用されているた
め、本実施例の導電性ペーストのようにガラス分を含ま
せてあれば、導電性ペースト４の焼結後において、厚膜
端子電極部５との熱膨張係数のマッチングがとれる。こ
のため従来の半田のように厚膜導体の材料を限定するこ
となく、厚膜導体材料の汎用性が増すとともに、半導体
装置１と厚膜端子電極部５とは非常に強固に接続され、
接続の信頼性が向上する。In general, thick film circuit boards are widely used in which the conductive material contains glass. Therefore, if the conductive paste of the present embodiment contains a glass component, the conductive material will be conductive. After the paste 4 is sintered, the coefficient of thermal expansion of the thick film terminal electrode portion 5 can be matched. Therefore, the versatility of the thick-film conductor material is increased without limiting the material of the thick-film conductor unlike the conventional solder, and the semiconductor device 1 and the thick-film terminal electrode portion 5 are connected very firmly.
Improves connection reliability.
【００１４】また導電性ペースト４であれば乾燥・脱バ
インダー・焼成処理においてペースト自身の広がりもな
く隣接とショートする恐れはなく、半田材料を使用して
いないため、半田濡れを促進するため必要であるフラッ
クスも必要なく、無洗浄プロセスでの実装が可能であ
る。In the case of the conductive paste 4, the paste itself does not spread in the drying, debinding and firing processes, and there is no risk of short-circuiting with the adjacent one. Since no solder material is used, it is necessary to promote solder wetting. It does not require a certain flux and can be mounted in a non-cleaning process.
【００１５】なお本実施例において、導電性ペースト４
の導電性材料は銀を使用したが、金などの貴金属であっ
てよい。またバンプ電極３をＡｕよりなるものとした
が、その材質はＡｕに限られるものでなく、例えば、Ｃ
ｕなどの他の金属によって形成しても良い。さらに導電
性ペースト４をバンプ電極３上に形成するとしたが、導
電性ペースト４を回路基板６上の端子電極部５側に印刷
や転写法などを用いて形成しても良い。In this embodiment, the conductive paste 4 is used.
Although silver was used as the conductive material, it may be a noble metal such as gold. Further, although the bump electrode 3 is made of Au, the material is not limited to Au.
It may be formed of another metal such as u. Further, the conductive paste 4 is formed on the bump electrodes 3, but the conductive paste 4 may be formed on the terminal electrode portion 5 side of the circuit board 6 by using a printing method or a transfer method.
【００１６】[0016]
【発明の効果】以上に説明したように、本発明の半導体
装置の実装方法は、ガラスを含む無機物の導電性材料
と、有機バインダーとからなる導電性ペーストによっ
て、半導体装置の電極パッド部上に形成したバンプ電極
と、回路基板上の厚膜端子電極とを焼成によって電気的
な接続を行うものである。導電性ペーストの焼結後に
は、ガラス分を含む導体配線とのマッチングがとれるた
めに汎用性があり、微細ピッチでの信頼性の高い、か
つ、経時変化のない接続が実現できるため、極めて実用
上価値の高いものである。As described above, according to the method of mounting a semiconductor device of the present invention, a conductive paste made of an inorganic conductive material containing glass and an organic binder is used to form an electrode pad on the semiconductor device. The formed bump electrodes are electrically connected to the thick film terminal electrodes on the circuit board by firing. After the conductive paste is sintered, it is versatile because it can be matched with the conductor wiring containing the glass component, and it is possible to realize highly reliable connections at a fine pitch, and to achieve connections that do not change over time, making it extremely practical. It is of high value.
【図１】本発明の一実施例を示す半導体装置の接続部の
拡大図FIG. 1 is an enlarged view of a connecting portion of a semiconductor device showing an embodiment of the present invention.
【図２】同半導体装置の概略説明図FIG. 2 is a schematic explanatory diagram of the semiconductor device.
【図３】従来の半田バンプによる半導体装置の実装法の
概略説明図FIG. 3 is a schematic explanatory view of a conventional method of mounting a semiconductor device by solder bumps.
１，７ 半導体装置 ２ 電極パッド部 ３ バンプ電極 ４ 導電性ペースト ５，９ 厚膜端子電極部 ６，１０ 回路基板 ８ 半田バンプ電極 1,7 Semiconductor device 2 Electrode pad part 3 Bump electrode 4 Conductive paste 5,9 Thick film terminal electrode part 6,10 Circuit board 8 Solder bump electrode
Claims (1)
を備え、ガラスを含む無機物の導電性材料と有機バイン
ダーとからなる導電性ペーストを介して、前記バンプ電
極と回路基板上の厚膜端子電極部とを接着し、前記有機
バインダーの脱バインダー及び焼成処理により前記導電
性ペーストを焼結させて、前記バンプ電極と厚膜端子電
極部とを固定することを特徴とする半導体装置の実装方
法。1. A bump electrode is provided on an electrode pad of a semiconductor device, and the bump electrode and a thick film terminal electrode on a circuit board are provided through a conductive paste made of an inorganic conductive material including glass and an organic binder. Section, and the conductive paste is sintered by debinding the organic binder and firing treatment to fix the bump electrode and the thick film terminal electrode section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150079A JPH0722465A (en) | 1993-06-22 | 1993-06-22 | Semiconductor device mounting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5150079A JPH0722465A (en) | 1993-06-22 | 1993-06-22 | Semiconductor device mounting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0722465A true JPH0722465A (en) | 1995-01-24 |
Family
ID=15489059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5150079A Pending JPH0722465A (en) | 1993-06-22 | 1993-06-22 | Semiconductor device mounting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0722465A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009302511A (en) * | 2008-05-12 | 2009-12-24 | Tanaka Holdings Kk | Bump, manufacturing method for the bump, and mounting method for substrate having the bump formed |
| JP2014078558A (en) * | 2012-10-09 | 2014-05-01 | Mitsubishi Materials Corp | Semiconductor device, ceramic circuit board, and method for manufacturing semiconductor device |
-
1993
- 1993-06-22 JP JP5150079A patent/JPH0722465A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009302511A (en) * | 2008-05-12 | 2009-12-24 | Tanaka Holdings Kk | Bump, manufacturing method for the bump, and mounting method for substrate having the bump formed |
| US8492894B2 (en) | 2008-05-12 | 2013-07-23 | Tanaka Kikinzoku Kogyo K.K. | Bump, method for forming the bump, and method for mounting substrate having the bump thereon |
| WO2010101236A1 (en) * | 2009-03-06 | 2010-09-10 | 田中貴金属工業株式会社 | Bump, method for forming bump, and method for mounting substrate having the bump formed thereon |
| US8962471B2 (en) | 2009-03-06 | 2015-02-24 | Tanaka Kikinzoku Kogyo K.K. | Bump, method for forming the bump, and method for mounting substrate having the bump thereon |
| JP2014078558A (en) * | 2012-10-09 | 2014-05-01 | Mitsubishi Materials Corp | Semiconductor device, ceramic circuit board, and method for manufacturing semiconductor device |
| US9401340B2 (en) | 2012-10-09 | 2016-07-26 | Mitsubishi Materials Corporation | Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device |
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