JPH0723032Y2 - Thyristor valve - Google Patents
Thyristor valveInfo
- Publication number
- JPH0723032Y2 JPH0723032Y2 JP1990115465U JP11546590U JPH0723032Y2 JP H0723032 Y2 JPH0723032 Y2 JP H0723032Y2 JP 1990115465 U JP1990115465 U JP 1990115465U JP 11546590 U JP11546590 U JP 11546590U JP H0723032 Y2 JPH0723032 Y2 JP H0723032Y2
- Authority
- JP
- Japan
- Prior art keywords
- insulating
- flange
- thyristor
- thyristor valve
- height
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Rectifiers (AREA)
- Power Conversion In General (AREA)
Description
【考案の詳細な説明】 [考案の目的] (産業上の利用分野) 本考案は、サイリスタバルブの絶縁支柱の強度向上及び
モジュール間の絶縁距離(沿面)増加を図ったサイリス
タバルブに関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial field of application) The present invention relates to a thyristor valve in which the strength of an insulating support of a thyristor valve is improved and the insulation distance (creeping surface) between modules is increased.
(従来の技術) 第3図はサイリスタバルブ10の構成図、第2図は従来の
サイリスタバルブの絶縁支柱のフランジとの取付部詳細
を示した図である。図中1はモジュール上下間を絶縁す
るための絶縁支柱、2は絶縁支柱を取付けるためフラン
ジ、4,5,6はサイリスタバルブ10の枠を構成するための
フレーム、7はサイリスタモジュール、8は絶縁支柱1
とフランジ2の接続部、9はフランジのネジ部高さであ
る。(Prior Art) FIG. 3 is a configuration diagram of a thyristor valve 10, and FIG. 2 is a view showing details of a mounting portion of a conventional thyristor valve on a flange of an insulating column. In the figure, 1 is an insulating pillar for insulating the upper and lower parts of the module, 2 is a flange for mounting the insulating pillar, 4, 5 and 6 are frames for forming a frame of the thyristor valve 10, 7 is a thyristor module, and 8 is insulating. Prop 1
And the connection portion of the flange 2 and 9 is the height of the thread portion of the flange.
サイリスタバルブ10は、フレーム4,5,6と絶縁支柱1で
サイリスタバルブ10の枠を構成している。この間にサイ
リスタモジュール7を図示しない固定機構により絶縁支
柱1に固定してサイリスタモジュール7の上・下間の絶
縁を保っている。絶縁支柱1は支柱本体両端にネジを切
り鋼製フランジ2をネジ込んでいる。In the thyristor valve 10, the frames 4, 5 and 6 and the insulating support 1 constitute a frame of the thyristor valve 10. During this time, the thyristor module 7 is fixed to the insulating column 1 by a fixing mechanism (not shown) to maintain insulation between the upper and lower parts of the thyristor module 7. The insulating column 1 has a steel flange 2 screwed into both ends of the column body.
サイリスタバルブ10を設計する際のポイントとして耐振
強度と絶縁性能があげられる。サイリスタバルブ10が水
平方向に加振された場合、第2図で示した従来の絶縁支
柱1とフランジ2の接続部8で最も大きな曲げモーメン
トが発生する。Vibration resistance and insulation performance are important points when designing the thyristor valve 10. When the thyristor valve 10 is horizontally vibrated, the largest bending moment is generated at the connecting portion 8 between the conventional insulating support column 1 and the flange 2 shown in FIG.
この場合、前述で示したように絶縁支柱1はネジ加工を
施しているため絶縁支柱1の材料そのものの曲げ応力よ
り極端に低くなる欠点があった。In this case, as described above, since the insulating pillar 1 is threaded, there is a drawback that the bending stress is extremely lower than the bending stress of the material of the insulating pillar 1.
従って、従来は絶縁支柱1にネジ込んでいるフランジ2
のネジ部高さ9を上げ、又絶縁支柱1のサイズをランク
アップすることにより強度の向上を図っていた。Therefore, conventionally, the flange 2 that is screwed into the insulating column 1 is used.
The height of the screw portion 9 was increased and the size of the insulating column 1 was increased to improve the strength.
一方、フランジ2のネジ部高さ9が大きくなると、この
フランジ2は絶縁支柱1の両端に取り付けられるため、
このネジ部高さ9が高くなる程サイリスタモジュール7
の上下間の絶縁距離は小さくなる。On the other hand, when the threaded portion height 9 of the flange 2 is increased, the flange 2 is attached to both ends of the insulating support column 1.
Thyristor module 7 increases as the screw height 9 increases.
The insulation distance between the top and bottom of is small.
(考案が解決しようとする課題) このような従来の対策では絶縁支柱1がコストアップ
し、サイリスタモジュール7の上・下間絶縁距離(沿面
距離)が減少してサイリスタバルブ10が大形化する等の
問題があった。(Problems to be solved by the invention) With such a conventional measure, the cost of the insulating column 1 increases, the insulation distance (creep distance) between the upper and lower sides of the thyristor module 7 decreases, and the thyristor valve 10 becomes larger. There was a problem such as.
本考案の目的は、絶縁支柱の強度の向上及びサイリスタ
モジュールの上下間絶縁距離(沿面距離)を増して、し
かもサイリスタバルブの小形化を図ることにある。An object of the present invention is to improve the strength of an insulating support column and increase the vertical insulation distance (creeping distance) of a thyristor module, and to downsize the thyristor valve.
[考案の構成] (課題を解決するための手段) 本考案は前述の目的を達成するために、絶縁支柱の両端
にネジ止めされたフランジを有する複数本の絶縁支柱で
上下フレームを固定し、且つ前記絶縁支柱でサイリスタ
素子及びその周面回路を収納した複数のサイリスタモジ
ュールを絶縁支持して構成したサイリスタバルブにおい
て、 前記絶縁支柱の端部の内側に前記フランジの高さの2倍
から3倍以下で、前記絶縁支柱と同じ肉厚の絶縁補強材
を密接圧入したことを特徴とするものである。[Means for Solving the Problems] (Means for Solving the Problems) In order to achieve the above-mentioned object, the present invention fixes the upper and lower frames with a plurality of insulating columns having flanges screwed to both ends of the insulating columns. Also, in a thyristor valve constituted by insulatingly supporting a plurality of thyristor modules accommodating a thyristor element and a peripheral surface circuit thereof by the insulating support, a height of the flange is 2 to 3 times inside the end of the insulating support. The following is characterized in that an insulating reinforcing material having the same thickness as that of the insulating pillar is closely press-fitted.
(作用) 本考案によれば、絶縁支柱の端部の内側にフランジの高
さより高い絶縁補強材を密接圧入したので、絶縁支柱と
フランジとの接続部の曲げ強度が向上すると共に、高さ
の低いフランジが使用出来るので、サイリスタモジュー
ルの上・下間の絶縁距離が増え、サイリスタバルブのコ
ンパクト化が図れる。(Operation) According to the present invention, since the insulating reinforcing material higher than the height of the flange is press-fitted inside the end portion of the insulating strut, the bending strength of the connection portion between the insulating strut and the flange is improved, and Since a low flange can be used, the insulation distance between the top and bottom of the thyristor module increases, and the thyristor valve can be made compact.
(実施例) 以下、本考案の実施例を第1図を参照して説明する。本
考案は第3図に示すように、絶縁支柱1とフレーム4,5,
6、モジュール7で構成するサイリスタバルブ10におい
て、絶縁支柱1の内側に、フランジ2の高さ9より高い
絶縁材料からなる補強材3を密接圧入するようにしたも
のである。(Embodiment) An embodiment of the present invention will be described below with reference to FIG. The present invention, as shown in FIG.
6. In the thyristor valve 10 composed of the module 7, the reinforcing material 3 made of an insulating material having a height higher than the height 9 of the flange 2 is press-fitted inside the insulating support column 1.
このように構成することにより、高さの低いフランジ2
が使用出来るので、サイリスタモジュール7の上・下間
の絶縁距離が増えサイリスタバルブ10のコンパクト化が
図れる。絶縁支柱1の中に補強材3を圧入しているの
で、絶縁支柱1とフランジ2との接続部8に曲げ応力が
集中するのを防ぎ、ネジせん断力は軽減され曲げ強度が
向上する。With this configuration, the flange 2 having a low height is
Can be used, the insulation distance between the upper and lower parts of the thyristor module 7 increases, and the thyristor valve 10 can be made compact. Since the reinforcing material 3 is press-fitted into the insulating column 1, the bending stress is prevented from concentrating on the connecting portion 8 between the insulating column 1 and the flange 2, and the screw shearing force is reduced and the bending strength is improved.
ここで、前述の実施例の具体的な作用効果について説明
する。絶縁支柱1のサイズとフランジ2の外形を任意に
設定して、補強材3を設けない場合の絶縁支柱1とフラ
ンジ2との接続部8の曲げ強度と、補強材3を密接圧入
した場合の曲げ強度を比較すると、前者の方は材料特性
そのものの曲げ強度より40%程度に強度が低下するのに
対し、後者の方はほぼ材料特性そのものの曲げ強度まで
強度を上げることができる。但し、補強材3の高さは、
フランジネジ部高さH×2倍、肉厚は同じに選定した場
合である。本値をH×2倍以上にすれば、曲げ強度を若
干上げることができるが、材料費等の経済的効果を考慮
すれば、H×2〜H×3の範囲が最適である。Here, the specific operational effects of the above-described embodiment will be described. When the size of the insulating column 1 and the outer shape of the flange 2 are arbitrarily set and the reinforcing member 3 is not provided, the bending strength of the connecting portion 8 between the insulating column 1 and the flange 2 and the case where the reinforcing member 3 is press-fitted Comparing the bending strengths, the former has a strength lower than that of the material properties by about 40%, while the latter has a strength almost equal to that of the material properties. However, the height of the reinforcing material 3 is
The case is the case where the flange screw portion height H × 2 times and the wall thickness are selected to be the same. If this value is set to H × 2 times or more, the bending strength can be slightly increased, but in consideration of economic effects such as material cost, the range of H × 2 to H × 3 is optimal.
[考案の効果] 以上説明のように本考案によれば、以下の効果を奏する
ことが出来る。[Effects of the Invention] As described above, according to the present invention, the following effects can be achieved.
(1)絶縁支柱の内側に絶縁材料による補強材を圧入す
ることにより、絶縁支柱とフラジ部との曲げ応力集中を
分散させ曲げ強度を向上することが出来る。(1) By press-fitting a reinforcing material made of an insulating material inside the insulating column, the bending stress concentration between the insulating column and the bulge portion can be dispersed to improve the bending strength.
(2)絶縁支柱のサイズをランクアップすることなく使
用出来るので、コストの低減を図ることが出来る。(2) Since it can be used without increasing the size of the insulating column, the cost can be reduced.
(3)フランジネジ部高さを低くおさえることにより、
サイリスタモジュール上・下間の絶縁距離(沿面距離)
を増加することが出来る。(3) By keeping the height of the flange screw part low,
Insulation distance between top and bottom of thyristor module (creeping distance)
Can be increased.
第1図は本考案の一実施例を示す絶縁支柱のフランジと
の接続部詳細図で,(A)は側断面図,(B)は平面
図、第2図は従来の絶縁支柱のフランジとの接続部詳細
図で,(A)は側断面図,(B)は平面図、第3図はサ
イリスタバルブの斜視図である。 1…絶縁支柱、2…フランジ、3…補強材、4,5,6…フ
レーム、7…サイリスタモジュール、8…絶縁支柱とフ
ランジの接続部、9…フランジネジ部高さ、10…サイリ
スタバルブ。FIG. 1 is a detailed view of a connection portion of an insulating strut with a flange according to an embodiment of the present invention. (A) is a side sectional view, (B) is a plan view, and FIG. 2 is a conventional insulating strut flange. 3A is a side sectional view, FIG. 3B is a plan view, and FIG. 3 is a perspective view of a thyristor valve. 1 ... Insulating columns, 2 ... Flange, 3 ... Reinforcing material, 4,5,6 ... Frame, 7 ... Thyristor module, 8 ... Insulating column and flange connection, 9 ... Flange screw height, 10 ... Thyristor valve.
Claims (1)
を有する複数本の絶縁支柱で上下フレームを固定し、且
つ前記絶縁支柱でサイリスタ素子及びその周辺回路を収
納した複数のサイリスタモジュールを絶縁支持して構成
したサイリスタバルブにおいて、 前記絶縁支柱の端部の内側に前記フランジの高さの2倍
から3倍以下で、前記絶縁支柱と同じ肉厚の絶縁補強材
を密接圧入したことを特徴とするサイリスタバルブ。1. An upper and lower frame is fixed by a plurality of insulating struts having flanges screwed to both ends of the insulating struts, and the insulating struts insulate and support a plurality of thyristor modules accommodating thyristor elements and their peripheral circuits. In the thyristor valve configured as described above, an insulating reinforcing material having a thickness equal to or less than 2 to 3 times the height of the flange is closely fitted inside the end portion of the insulating strut. Thyristor valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990115465U JPH0723032Y2 (en) | 1990-11-02 | 1990-11-02 | Thyristor valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990115465U JPH0723032Y2 (en) | 1990-11-02 | 1990-11-02 | Thyristor valve |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0472877U JPH0472877U (en) | 1992-06-26 |
| JPH0723032Y2 true JPH0723032Y2 (en) | 1995-05-24 |
Family
ID=31863240
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990115465U Expired - Fee Related JPH0723032Y2 (en) | 1990-11-02 | 1990-11-02 | Thyristor valve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0723032Y2 (en) |
-
1990
- 1990-11-02 JP JP1990115465U patent/JPH0723032Y2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0472877U (en) | 1992-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
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| S531 | Written request for registration of change of domicile |
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| R350 | Written notification of registration of transfer |
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| R371 | Transfer withdrawn |
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| LAPS | Cancellation because of no payment of annual fees |