JPH07239552A - Offcontact exposure device - Google Patents
Offcontact exposure deviceInfo
- Publication number
- JPH07239552A JPH07239552A JP6056588A JP5658894A JPH07239552A JP H07239552 A JPH07239552 A JP H07239552A JP 6056588 A JP6056588 A JP 6056588A JP 5658894 A JP5658894 A JP 5658894A JP H07239552 A JPH07239552 A JP H07239552A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thickness
- stage
- copy film
- distance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract description 67
- 239000006185 dispersion Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/703—Gap setting, e.g. in proximity printer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Projection-Type Copiers In General (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明はオフコンタクト露光装
置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an off-contact exposure apparatus.
【０００２】[0002]
【従来の技術】プリント基板等の製造に際して、露光装
置を用いて回路パターンを基板上に焼き付けるリソグラ
フィ法が近年用いられるようになって来ている。露光装
置には回路パターンを描いたコピーフィルムを装着し、
該コピーフィルムを保持具に保持させて基板上に設置
し、光源からの紫外線光等の照射光により基板上のフォ
トレジスト上に回路パターンを焼き付ける方法が採用さ
れている。コピーフィルムと基板とは密着させて露光を
行う方法と、離間させて露光を行う方法とがあり、後者
を通常オフコンタクト方式と呼んでいる。このオフコン
タクト露光装置において、重要なことは基板とコピーフ
ィルムの距離を厳密に調整することである。そのため、
オフコンタクト露光装置では予め基板の厚さを計測して
おき、この厚さを勘案して基板とコピーフィルム間のギ
ャップの設定を行っている。2. Description of the Related Art In manufacturing a printed circuit board or the like, a lithographic method has recently been used in which a circuit pattern is printed on a substrate using an exposure device. Attach a copy film with a circuit pattern on the exposure device,
A method is employed in which the copy film is held by a holder and placed on a substrate, and a circuit pattern is printed on a photoresist on the substrate by irradiation light such as ultraviolet light from a light source. There are a method of exposing the copy film and the substrate in close contact with each other, and a method of exposing the copy film and the substrate in a separated state. In this off-contact exposure apparatus, what is important is to strictly adjust the distance between the substrate and the copy film. for that reason,
In the off-contact exposure apparatus, the thickness of the substrate is measured in advance, and the gap between the substrate and the copy film is set in consideration of this thickness.
【０００３】[0003]
【発明が解決しようとする課題】しかし、基板の厚さは
公差（基板厚さの±１０〜２０％程度）の範囲でバラツ
キがあり、そのため基板とコピーフィルムのギャップも
基板毎にバラツキが生ずる問題があった。本発明は上記
した従来技術の問題点を解決することを目的とする。However, the thickness of the substrate varies within the tolerance range (about ± 10 to 20% of the substrate thickness), and thus the gap between the substrate and the copy film also varies from substrate to substrate. There was a problem. The present invention aims to solve the above-mentioned problems of the prior art.
【０００４】[0004]
【課題を解決するための手段】上記目的を達成するため
に本発明のオフコンタクト露光装置は、転写すべきパタ
ーンを描いたコピーフィルムを保持するコピーフィルム
保持手段と、該コピーフィルムと所定距離をあけて前記
パターンを転写される対象物を保持する対象物保持手段
と、該対象物の厚さを測定する手段と、前記コピーフィ
ルム保持手段と、前記対象物保持手段の間の距離を調整
する手段と、前記対象物の厚さからコピーフィルム表面
と対象物表面との間隔を所定値にすべく前記調整する手
段を制御する手段とを備えたことを特徴とする。また、
請求項２のオフコンタクト露光装置においては、前記制
御する手段が、コピーフィルム保持手段と対象物保持手
段の間隔を測定する手段を備え、該測定する手段からの
信号を入力して該コピーフィルム保持手段と対象物保持
手段の間隔を所定値とするように閉ループ制御を行うこ
とを特徴とする。In order to achieve the above object, an off-contact exposure apparatus of the present invention comprises a copy film holding means for holding a copy film on which a pattern to be transferred is drawn, and a predetermined distance from the copy film. An object holding means for holding the object to which the pattern is transferred is opened, a means for measuring the thickness of the object, the copy film holding means, and the distance between the object holding means are adjusted. Means, and means for controlling the means for adjusting the gap between the surface of the copy film and the surface of the object to a predetermined value based on the thickness of the object. Also,
3. The off-contact exposure apparatus according to claim 2, wherein the controlling means comprises means for measuring a distance between the copy film holding means and the object holding means, and a signal from the measuring means is inputted to hold the copy film holding means. It is characterized in that the closed loop control is performed so that the distance between the means and the object holding means becomes a predetermined value.
【０００５】[0005]
【作用】対象物の厚さが測定され、この測定厚さに基づ
いてコピーフィルム保持手段と対象物保持手段の距離調
整の制御がなされる。そのため、対象物の厚さが変動し
ても、常に一定の距離に調整することが可能である。ま
た請求項２のオフコンタクト露光装置では、コピーフィ
ルム保持手段と対象物保持手段の間隔を測定して、該測
定値に基づいて閉ループ制御により間隔調整を行うた
め、更に精度の高い調整を行える効果がある。The thickness of the object is measured, and the distance adjustment between the copy film holding means and the object holding means is controlled based on the measured thickness. Therefore, even if the thickness of the object changes, it is possible to always adjust the distance to a constant value. Further, in the off-contact exposure apparatus according to claim 2, the distance between the copy film holding means and the object holding means is measured, and the distance is adjusted by the closed loop control based on the measured value. There is.
【０００６】[0006]
【実施例】以下本発明の実施例を図面に基づいて説明す
る。このオフコンタクト露光装置は、コピーフィルム吸
着装置１と基板ステージ２と基板厚さ測定装置３及び制
御装置５を備えている。コピーフィルム吸着装置１は基
板ステージ２の上方に位置し、ガラス板１０の下面に真
空ポンプ１１により吸引してコピーフィルムＦを密着さ
せるようなっている。この実施例ではコピーフィルム吸
着装置１は固定されており、動かないようになってい
る。このコピーフィルム吸着装置１の上方には更に光源
９が設けられており、ここから紫外線などの露光波長の
光を照射するようになっている。Embodiments of the present invention will be described below with reference to the drawings. This off-contact exposure apparatus comprises a copy film suction device 1, a substrate stage 2, a substrate thickness measuring device 3 and a control device 5. The copy film suction device 1 is located above the substrate stage 2 and is adapted to bring the copy film F into close contact with the lower surface of the glass plate 10 by suction using a vacuum pump 11. In this embodiment, the copy film suction device 1 is fixed and immovable. A light source 9 is further provided above the copy film adsorbing device 1, and light having an exposure wavelength such as ultraviolet rays is emitted from the light source 9.
【０００７】基板ステージ２は吸着ステージ２０を備え
ており、この上面に基板Ｗを吸着するようになってい
る。真空ポンプ２５は基板Ｗを吸着するためのものであ
る。吸着ステージ２０はＸステージ２１、Ｙステージ２
２、Ｚステージ２３、θステージ２４に支持されてお
り、縦横方向、上下方向及び回転方向に可動になってい
る。これらのステージ２１、２２、２３、２４は制御装
置５に制御されており、制御装置５からの指令信号によ
り稼働するように構成されている。The substrate stage 2 is equipped with a suction stage 20, and the substrate W is sucked onto the upper surface thereof. The vacuum pump 25 is for sucking the substrate W. The suction stage 20 is an X stage 21 and a Y stage 2
2, the Z stage 23, and the θ stage 24, and is movable in the vertical and horizontal directions, the vertical direction, and the rotation direction. These stages 21, 22, 23, 24 are controlled by the control device 5 and are configured to be operated by a command signal from the control device 5.
【０００８】基板厚さ測定装置３は基板ステージ２の近
傍に設けられており、吸着ステージ２０上に載置される
基板Ｗの厚さをその都度測定するように構成されてい
る。この基板厚さ測定装置３は基板ステージ２に基板Ｗ
が搬入される直前の位置に設けるのが好ましい。基板厚
さ測定装置３は一対の測長器３０と演算装置３１から構
成され、基板Ｗの実際の厚さを測定するようになってい
る。基板厚さ測定装置３の構成としては種々の態様が可
能であり、機械的、光学的或いは磁気的に厚さを測定す
るものなどが使用可能である。また静電容量型の測定装
置を使用することも可能である。また基板Ｗの測定は基
板Ｗ全面に亘っても良いし、或いは所定箇所をサンプリ
ングして測定する等適宜の態様を採ることが可能であ
る。The substrate thickness measuring device 3 is provided near the substrate stage 2 and is configured to measure the thickness of the substrate W placed on the suction stage 20 each time. The substrate thickness measuring device 3 is mounted on the substrate stage 2 with the substrate W.
Is preferably provided at a position immediately before being loaded. The substrate thickness measuring device 3 is composed of a pair of length measuring devices 30 and a computing device 31, and measures the actual thickness of the substrate W. The substrate thickness measuring device 3 may have various configurations, and a device that mechanically, optically, or magnetically measures the thickness may be used. It is also possible to use a capacitance type measuring device. In addition, the measurement of the substrate W may be performed over the entire surface of the substrate W, or an appropriate mode such as sampling and measuring a predetermined portion can be adopted.
【０００９】演算装置３１で計算された基板厚さｔは制
御装置５に入力され、制御装置５はこの基板厚さｔと設
定されたギャップ量ｇに基づいてＺステージ２３を制御
して吸着ステージ２０を昇降させ基板Ｗの上下位置を調
整させるように構成されている。制御装置５は演算装置
３１から基板厚さｔを入力すると共に、入力装置６から
既知のコピーフィルム厚さｈと所望のギャップ量ｇとを
入力するようになっている。ギャップ量ｇは必要とする
基板表面Ｓｗとコピーフィルム表面Ｓｆ間の間隔であ
る。この実施例では吸着ステージ２０の上面とガラス板
１０の下面の距離ｄをフィルム基板間距離測定装置７に
より計測しており、この距離ｄを制御装置５に入力し
て、閉ループ制御を行っている。即ち制御装置５は距離
ｄ＝基板厚さｔ＋ギャップ量ｇ＋コピーフィルム厚さｈ
の演算を行い、距離ｄの調整を行うことによりギャップ
量ｇの調整を行うようになっている。このように閉ルー
プ制御を行えば確実に入力装置６で指定されたギャップ
量ｇを設定することが可能になる。The substrate thickness t calculated by the arithmetic unit 31 is input to the control unit 5, and the control unit 5 controls the Z stage 23 based on the substrate thickness t and the set gap amount g to control the suction stage. It is configured to raise and lower 20 to adjust the vertical position of the substrate W. The control unit 5 inputs the substrate thickness t from the arithmetic unit 31, and inputs the known copy film thickness h and the desired gap amount g from the input unit 6. The gap amount g is a required space between the substrate surface Sw and the copy film surface Sf. In this embodiment, the distance d between the upper surface of the suction stage 20 and the lower surface of the glass plate 10 is measured by the film substrate distance measuring device 7, and this distance d is input to the control device 5 to perform closed loop control. . That is, the control device 5 controls the distance d = substrate thickness t + gap amount g + copy film thickness h.
Is calculated and the distance d is adjusted to adjust the gap amount g. By performing the closed loop control in this manner, it becomes possible to reliably set the gap amount g designated by the input device 6.
【００１０】なお、コピーフィルム吸着装置１の上方に
はＴＶカメラ５０が設けられており、この画像信号は画
像処理装置５１を介して制御装置５に入力している。制
御装置５は該画像信号を解析して、コピーフィルムＦと
基板Ｗのｘ−ｙ方向及びθ方向の位置調整をＸステージ
２１、Ｙステージ２２及びθステージ２４に行わせるよ
うになっている。A TV camera 50 is provided above the copy film suction device 1, and this image signal is input to the control device 5 via the image processing device 51. The control device 5 analyzes the image signal and causes the X stage 21, the Y stage 22, and the θ stage 24 to perform position adjustment of the copy film F and the substrate W in the xy direction and the θ direction.
【００１１】次に動作を説明する。前工程から搬入され
た基板Ｗは最初に基板厚さ測定装置３によりその基板厚
さｔを計測され、基板ステージ２の吸着ステージ２０上
に載置される。計測された基板厚さｔは制御装置５に送
られる。コピーフィルム吸着装置１にはコピーフィルム
Ｆを装着しておき、ＴＶカメラ５０及び画像処理装置５
１により得られる画像信号により、制御装置５を介して
Ｘステージ２１、Ｙステージ２２、θステージ２４を制
御してコピーフィルムＦと基板Ｗの位置合わせを行う。Next, the operation will be described. The substrate W carried in from the previous step is first measured for its substrate thickness t by the substrate thickness measuring device 3 and placed on the suction stage 20 of the substrate stage 2. The measured substrate thickness t is sent to the control device 5. The copy film F is attached to the copy film suction device 1, and the TV camera 50 and the image processing device 5 are installed.
The X stage 21, the Y stage 22, and the θ stage 24 are controlled by the image signal obtained by 1 through the control device 5 to align the copy film F and the substrate W.
【００１２】次いで制御装置５は演算装置３１から入力
した基板厚さｔと入力装置６により指定されたギャップ
量ｇ、コピーフィルム厚さｈに基づいて距離ｄを計算
し、Ｚステージ２３に指令信号を出して、フィルム基板
間距離測定装置７からの帰還信号が設定されたギャップ
量ｇに一致するようにＺステージ２３を制御する。距離
ｄの調整により、入力装置６で指定されたギャップ量ｇ
が設定される。Next, the control unit 5 calculates the distance d based on the substrate thickness t input from the arithmetic unit 31, the gap amount g specified by the input unit 6, and the copy film thickness h, and a command signal to the Z stage 23. Then, the Z stage 23 is controlled so that the feedback signal from the inter-film-substrate distance measuring device 7 matches the set gap amount g. By adjusting the distance d, the gap amount g specified by the input device 6
Is set.
【００１３】次に光源９を稼働して露光を照射し、コピ
ーフィルムＦ上のパターンを基板Ｗ上に転写し、基板Ｗ
を次工程に送る。Next, the light source 9 is operated to irradiate it with exposure light, and the pattern on the copy film F is transferred onto the substrate W.
To the next step.
【００１４】以上説明したように上記した構成のオフコ
ンタクト露光装置は、基板Ｗの基板厚さｔを計測し、実
際の基板厚さｔに基づいてコピーフィルム表面Ｓｆと基
板表面Ｓｗ間のギャップ量ｇを設定ギャップ量となるよ
うに調整制御しているため、基板Ｗの基板厚さｔにバラ
ツキがあっても、これに影響されることなく、常に所望
のギャップ量ｇに設定することが可能になる。また、フ
ィルム基板間距離測定装置７により距離ｄを計測しつつ
制御する閉ループ制御を行っているため、確実にギャッ
プ量ｇの設定を行える効果がある。As described above, the off-contact exposure apparatus having the above-described structure measures the substrate thickness t of the substrate W, and based on the actual substrate thickness t, the gap amount between the copy film surface Sf and the substrate surface Sw. Since g is adjusted and controlled to be the set gap amount, even if the substrate thickness t of the substrate W varies, it is possible to always set the desired gap amount g without being affected by this. become. Further, since the closed-loop control for controlling while measuring the distance d by the film-substrate distance measuring device 7 is performed, there is an effect that the gap amount g can be reliably set.
【００１５】[0015]
【発明の効果】以上説明したように本発明のオフコンタ
クト露光装置は、対象物の厚さを測定する手段とにより
対象物の厚さを測定し、測定した対象物の厚さからコピ
ーフィルム表面と対象物表面との間隔を所定値にするよ
うに調整するように構成されているため、基板の基板厚
さにバラツキがあっても、コピーフィルム表面と対象物
表面との間隔を所定値にすることができる。また請求項
２のオフコンタクト露光装置においては、コピーフィル
ム保持手段と対象物保持手段の間隔を測定する手段を備
え、該測定する手段からの信号を入力して該コピーフィ
ルム保持手段と対象物保持手段の間隔を所定値とすべく
閉ループ制御を行うように構成されているため、更に間
隔の調整を精度良く行える効果がある。As described above, the off-contact exposure apparatus of the present invention measures the thickness of the object by the means for measuring the thickness of the object and determines the measured thickness of the object from the surface of the copy film. Since it is configured to adjust the distance between the target surface and the target surface to a predetermined value, the distance between the copy film surface and the target surface is set to a predetermined value even if there is variation in the substrate thickness of the substrate. can do. The off-contact exposure apparatus according to claim 2 further comprises means for measuring the distance between the copy film holding means and the object holding means, and a signal from the measuring means is input to the copy film holding means and the object holding means. Since the closed loop control is performed so that the distance between the means is set to a predetermined value, there is an effect that the distance can be adjusted more accurately.
【図１】本発明の一実施例を示す概略ブロック図。FIG. 1 is a schematic block diagram showing an embodiment of the present invention.
１：コピーフィルム吸着装置、２：基板ステージ、３：
基板厚さ測定装置、５：制御装置、６：入力装置、７：
フィルム基板間距離測定装置、９：光源、１０：ガラス
板、１１：真空ポンプ、２０：吸着ステージ、２１：Ｘ
ステージ、２２：Ｙステージ、２３：Ｚステージ、２
４：θステージ、２５：真空ポンプ、３０：測長器、３
１：演算装置、５０：ＴＶカメラ、５１：画像処理装
置。1: Copy film suction device, 2: Substrate stage, 3:
Substrate thickness measuring device, 5: control device, 6: input device, 7:
Film substrate distance measuring device, 9: light source, 10: glass plate, 11: vacuum pump, 20: suction stage, 21: X
Stage, 22: Y stage, 23: Z stage, 2
4: θ stage, 25: vacuum pump, 30: length measuring device, 3
1: computing device, 50: TV camera, 51: image processing device.
Claims (2)
ルムを保持するコピーフィルム保持手段と、 該コピーフィルムと所定距離をあけて前記パターンを転
写される対象物を保持する対象物保持手段と、 該対象物の厚さを測定する手段と、 前記コピーフィルム保持手段と、前記対象物保持手段の
間の距離を調整する手段と、 前記対象物の厚さからコピーフィルム表面と対象物表面
との間隔を所定値にすべく前記調整する手段を制御する
手段と、 を備えたことを特徴とするオフコンタクト露光装置。1. A copy film holding means for holding a copy film on which a pattern to be transferred is drawn, an object holding means for holding an object to which the pattern is transferred at a predetermined distance from the copy film, Means for measuring the thickness of the object, the copy film holding means, means for adjusting the distance between the object holding means, the distance between the copy film surface and the object surface from the thickness of the object And a means for controlling the adjusting means so as to bring the value to a predetermined value.
持手段と対象物保持手段の間隔を測定する手段を備え、
該測定する手段からの信号を入力して該コピーフィルム
保持手段と対象物保持手段の間隔を所定値とするように
閉ループ制御を行う、 請求項１に記載のオフコンタクト露光装置。2. The control means comprises means for measuring the distance between the copy film holding means and the object holding means,
The off-contact exposure apparatus according to claim 1, wherein a signal from the measuring unit is input to perform closed loop control so that a distance between the copy film holding unit and the object holding unit becomes a predetermined value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6056588A JPH07239552A (en) | 1994-03-01 | 1994-03-01 | Offcontact exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6056588A JPH07239552A (en) | 1994-03-01 | 1994-03-01 | Offcontact exposure device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07239552A true JPH07239552A (en) | 1995-09-12 |
Family
ID=13031351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6056588A Pending JPH07239552A (en) | 1994-03-01 | 1994-03-01 | Offcontact exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07239552A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007212861A (en) * | 2006-02-10 | 2007-08-23 | Nsk Ltd | Exposure equipment |
| JP2010080980A (en) * | 2004-11-17 | 2010-04-08 | Asml Netherlands Bv | Lithographic equipment and substrate manufacturing method |
-
1994
- 1994-03-01 JP JP6056588A patent/JPH07239552A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010080980A (en) * | 2004-11-17 | 2010-04-08 | Asml Netherlands Bv | Lithographic equipment and substrate manufacturing method |
| US7978306B2 (en) | 2004-11-17 | 2011-07-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9188882B2 (en) | 2004-11-17 | 2015-11-17 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9581916B2 (en) | 2004-11-17 | 2017-02-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2007212861A (en) * | 2006-02-10 | 2007-08-23 | Nsk Ltd | Exposure equipment |
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