JPH07243097A - Wafer plating rack and plating method using the rack - Google Patents
Wafer plating rack and plating method using the rackInfo
- Publication number
- JPH07243097A JPH07243097A JP3614694A JP3614694A JPH07243097A JP H07243097 A JPH07243097 A JP H07243097A JP 3614694 A JP3614694 A JP 3614694A JP 3614694 A JP3614694 A JP 3614694A JP H07243097 A JPH07243097 A JP H07243097A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- wafer
- rack
- wafers
- plating solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims description 12
- 235000012431 wafers Nutrition 0.000 claims abstract description 50
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000007790 scraping Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 description 26
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体用のウエーハに
めっきを施すための技術に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for plating a semiconductor wafer.
【0002】[0002]
【従来の技術】ウエーハにバンプめっきなどのめっき処
理を施すについてはそのめっき対象面だけを選択的にめ
っき液に接触させるようにすることが重要な要素になっ
ている。そのため従来では一般に図5に示すような基本
構造を持つめっきシステムが用いられている。このシス
テムは、めっき槽20の中にウエーハWの支持手段でも
あるカップ状の噴射槽21を設け、この噴射槽21の上
端にウエーハWをそのめっき対象面が下側になる状態で
被せるようにして固定し、この状態で噴射槽21内にめ
っき液を加熱槽22から循環管路23を介して噴射状で
供給するようにしており、噴射槽21に供給されためっ
き液Mは、ウエーハWのめっき対象面に接触しつつ周辺
へ広がる流れを形成してめっき槽20に流れ出して行く
(例えば実公昭58−8774号公報、実開平3−19
70号公報、実開平4−44371号公報等を参照)。2. Description of the Related Art When a wafer is subjected to a plating treatment such as bump plating, it is an important element to selectively bring only the surface to be plated into contact with a plating solution. Therefore, conventionally, a plating system having a basic structure as shown in FIG. 5 is generally used. In this system, a cup-shaped jetting tank 21 which also serves as a supporting means for the wafer W is provided in the plating tank 20, and the upper end of the jetting tank 21 is covered with the wafer W with the surface to be plated facing downward. In this state, the plating solution is supplied in a jet form from the heating tank 22 through the circulation pipe 23 in this state, and the plating solution M supplied to the jet tank 21 is a wafer W. And a flow spreading to the periphery while forming contact with the surface to be plated and flowing out into the plating tank 20 (for example, Japanese Utility Model Publication No. 58-8774, Japanese Utility Model Publication 3-19).
70, Japanese Utility Model Publication No. 4-44371, etc.).
【0003】これから分かるように、従来のシステムで
は、1個の噴射槽について1枚ずつしかウエーハを処理
することができない。このことは、処理効率上の問題、
特にウエーハ1枚につき使用するめっき液の量が多くな
るという問題をもたらし、また大量のウエーハを効率的
に処理するために多数の噴射槽を横方向に並べて設けな
ければならず、そのために装置全体が大型化するという
問題ももたらしている。As can be seen from the above, the conventional system can process only one wafer per injection tank. This is a matter of processing efficiency,
In particular, it causes a problem that a large amount of plating solution is used for each wafer, and in order to efficiently process a large amount of wafers, a large number of injection tanks must be provided side by side, and therefore the entire apparatus is required. Has also brought the problem of becoming larger.
【0004】また従来のシステムでは、噴射槽内にめっ
き液を噴射供給する必要があるので、めっき槽やめっき
液供給機構などの装置要素が複雑になり、このことが、
装置全体の大型化の他の要因ともなると共に、装置の固
定的な配置を要求する所以となって工場スペースの効率
的利用を妨げることになっていた。Further, in the conventional system, since it is necessary to jet and supply the plating solution into the jetting tank, the device elements such as the plating tank and the plating solution feeding mechanism are complicated.
This is not only a factor for increasing the size of the entire apparatus, but also requires a fixed arrangement of the apparatus, which hinders efficient use of the factory space.
【0005】[0005]
【発明が解決しようとする課題】従って本発明の目的
は、2枚のウエーハを1個の支持手段、具体的にはラッ
クで支持させて処理できるようにすることで、ウエーハ
1枚当たりのめっき液の使用量の節減や装置全体の小型
化、さらにはめっき槽やめっき液供給機構などの装置要
素の簡易化を図れるようにすることにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to allow two wafers to be processed by being supported by one supporting means, specifically, a rack, so that plating per wafer can be performed. It is intended to reduce the amount of liquid used, downsize the entire apparatus, and simplify the apparatus elements such as a plating tank and a plating solution supply mechanism.
【0006】[0006]
【課題を解決するための手段】このような目的のため
に、本発明では、それぞれ内周面に2本の保持溝が形成
された半環状の枠部材を互いの一端で回動可能に組み合
わせて、保持対象のウエーハの外周に相似な環状に形成
した枠体を有し、この枠体における両枠部材の保持溝が
組み合わさって形成される環状の保持溝にそれぞれの周
縁部を嵌合させることで2枚一組のウエーハをそれぞれ
のめっき対象面が表側になる背中合わせにして保持させ
るようにした構造のめっき用ラックを用いるものとして
おり、2枚一組のウエーハを保持させたこのめっき用ラ
ックをめっき槽内のめっき液に浸漬させ、この浸漬状態
で表側の各ウエーハのめっき対象面にめっき液を流動的
に接触させてめっきを施すようにしている。To this end, according to the present invention, semi-annular frame members each having two holding grooves formed on the inner peripheral surface thereof are rotatably combined at one end thereof. Has a frame body formed in an annular shape similar to the outer periphery of the wafer to be held, and the respective peripheral portions are fitted to the annular holding grooves formed by combining the holding grooves of both frame members in this frame body. By using a plating rack having a structure in which two sets of wafers are held back to back with the surfaces to be plated on the front side, the plating rack holding two sets of wafers is used. The rack is immersed in the plating solution in the plating tank, and in this immersion state, the plating solution is brought into fluid contact with the surface to be plated of each front side wafer to perform plating.
【0007】このような本発明によると、一個のラック
で2枚のウエーハを同時に処理できるので、ウエーハ1
枚当たりのめっき液の使用量を大幅に節減できるし、ま
た処理能力当たりの装置サイズを小さくできる。According to the present invention as described above, since one wafer can process two wafers at the same time, the wafer 1
The amount of plating solution used per plate can be significantly reduced, and the device size per processing capacity can be reduced.
【0008】また本発明によると、めっき用ラックをめ
っき槽内のめっき液に浸漬させた状態でめっき液をウエ
ーハに接触させるようにしているので、従来のようなめ
っき液の噴射供給を行なう必要がなく、従ってめっき槽
やめっき液供給機構などの装置要素の大幅な簡易化を図
ることができる。Further, according to the present invention, the plating solution is brought into contact with the wafer while the plating rack is immersed in the plating solution in the plating tank. Therefore, the device elements such as the plating tank and the plating solution supply mechanism can be greatly simplified.
【0009】このめっき液の噴射供給を行なわずにウエ
ーハに対するめっき液の流動状態を与える点について
は、めっき槽内でめっき液を攪拌する方法も可能である
が、めっき用ラックをめっき液中で回転させる方法が、
めっき対象面におけるめっき液の流動分布についてより
高い均一性が得られるという点で、より好ましい。Regarding the point of giving the flow state of the plating solution to the wafer without jetting and supplying the plating solution, a method of stirring the plating solution in the plating tank is also possible, but the plating rack is placed in the plating solution. How to rotate is
It is more preferable in that a higher distribution of the flow distribution of the plating solution on the surface to be plated can be obtained.
【0010】また本発明では、上記のようなめっき用ラ
ックについて、保持溝の内側壁に電極端子の先端部を突
出させて設け、保持溝にウエーハの周縁部を嵌合させる
際にこの電極端子の先端部で対応部位のレジスト膜を削
り取ってウエーハへの通電を行なえるようにしている。
これはその周縁部を保持溝に嵌合させてウエーハの保持
をなすという構造を活用したもので、この結果、安定的
なめっき処理に不可欠であり従来でも様々な工夫を要求
されていたウエーハに対するカソードの通電を簡単且つ
確実に確保することができる。Further, according to the present invention, in the plating rack as described above, the tip of the electrode terminal is provided so as to project on the inner wall of the holding groove, and the electrode terminal is fitted when the peripheral portion of the wafer is fitted in the holding groove. The resist film of the corresponding portion is scraped off at the tip of the wafer so that the wafer can be energized.
This utilizes the structure in which the peripheral edge is fitted into the holding groove to hold the wafer, and as a result, it is essential for stable plating treatment and for wafers that have been conventionally required various innovations. Energization of the cathode can be ensured easily and reliably.
【0011】[0011]
【実施例】以下、本発明の一実施例について説明する。
図1及び図2に示すように、本実施例によるめっき用ラ
ック1は、保持対象のウエーハWの外周に相似な円環状
に形成された枠体2に回転力伝達部3を接続してなって
いる。EXAMPLES An example of the present invention will be described below.
As shown in FIGS. 1 and 2, the plating rack 1 according to the present embodiment has a rotational force transmitting portion 3 connected to a frame body 2 formed in an annular shape similar to the outer periphery of a wafer W to be held. ing.
【0012】枠体2は、それぞれ内周面に2本の保持溝
4、4を有する一対の半円環状の枠部材5、5を互いの
一端で回動可能に接続して形成されており、ウエーハW
の装着・取出しのために図中に想像線で示すように回動
させて開くことができるようにされている。また各枠部
材5の保持溝4、4の内側壁には図3に示すようにカソ
ード用の電極端子6の先端部が弾性的に出没可能となる
ようにして僅かに突出させられている。The frame 2 is formed by connecting a pair of semi-annular frame members 5 and 5 each having two holding grooves 4 and 4 on the inner peripheral surface thereof so as to be rotatable at one end of each other. , Wafer W
In order to attach / remove the device, it can be rotated and opened as shown by an imaginary line in the figure. Further, as shown in FIG. 3, the tip ends of the cathode electrode terminals 6 are slightly protruded from the inner side walls of the holding grooves 4 and 4 of each frame member 5 so as to be elastically retractable.
【0013】このめっき用ラック1にウエーハWを保持
させるには、先ず両枠部材5、5を上述のように開き、
そこで両枠部材5、5の間にウエーハW、Wを互いにめ
っき対象面が外側になる背中合わせにして挟んでから両
枠部材5、5を閉じる。すると各ウエーハWは、両枠部
材5、5の保持溝4、4にそれぞれの周縁部を全周にわ
たって嵌合させた状態で枠体2に保持される。この際
に、ウエーハWの周縁部は電極端子6の先端部を保持溝
4の内側壁内に押し込むようにして擦り、この結果そこ
に施されているレジスト膜が電極端子6の先端部で削り
取られ、電極端子6とウエーハWとの導通状態が得られ
る。To hold the wafer W on the plating rack 1, first open both frame members 5, 5 as described above,
Therefore, the wafers W and W are sandwiched between the frame members 5 and 5 so that the surfaces to be plated are outside each other, and then the frame members 5 and 5 are closed. Then, each wafer W is held by the frame body 2 in a state in which the peripheral edges of the respective wafers W are fitted in the holding grooves 4, 4 of both the frame members 5, 5. At this time, the peripheral edge of the wafer W is rubbed by pushing the tip of the electrode terminal 6 into the inner side wall of the holding groove 4, and as a result, the resist film applied thereto is scraped off by the tip of the electrode terminal 6. As a result, a conductive state between the electrode terminal 6 and the wafer W is obtained.
【0014】このようにして保持された両ウエーハW、
Wの裏側はめっき液に対し完全な密封状態になり、ラッ
ク1を図4に示すようにめっき槽7内のめっき液Mに漬
けた場合に両ウエーハW、Wの表側面、つまりめっき対
象面だけを選択的にめっき液Mに接触させることができ
る。Both wafers W thus held,
The back side of W is completely sealed with the plating solution, and when the rack 1 is immersed in the plating solution M in the plating tank 7 as shown in FIG. It is possible to selectively contact only the plating solution M.
【0015】このようなめっき用ラック1を用いてのめ
っき処理は、図4に示すようにめっき用ラック1をめっ
き槽7内のめっき液Mに漬けた状態で静かに回転させつ
つ進める。めっき用ラック1を回転させるには回転力伝
達部3を介して図外の駆動系から回転力を伝えることに
なるが、その機構は一般に知られている機構を用いるこ
とができるので、その説明及び図示は省略する。The plating process using such a plating rack 1 proceeds while gently rotating the plating rack 1 immersed in the plating solution M in the plating tank 7 as shown in FIG. In order to rotate the plating rack 1, a rotational force is transmitted from a drive system (not shown) via the rotational force transmission section 3, but a generally known mechanism can be used as the mechanism. And the illustration is omitted.
【0016】一般にめっき液Mは加熱する必要がある
が、この例ではホットバス方式による間接加熱を用いて
いる。即ち、加熱用の液体Lを満たしたホットバス8内
にめっき槽7を漬けてめっき槽7内のめっき液Mを加熱
するようにしている。Generally, the plating solution M needs to be heated, but in this example, indirect heating by a hot bath system is used. That is, the plating bath 7 is immersed in the hot bath 8 filled with the heating liquid L to heat the plating liquid M in the plating bath 7.
【0017】[0017]
【発明の効果】以上説明したごとく本発明によると、一
個のラックで2枚のウエーハを同時に処理できるので、
ウエーハ1枚当たりのめっき液の使用量を大幅に節減で
き、また処理能力当たりの装置サイズを小さくできる
し、さらに従来のようなめっき液の噴射的供給を行なう
必要がないので、めっき槽やめっき液供給機構などの装
置要素の大幅な簡易化を図ることができる。As described above, according to the present invention, one rack can process two wafers at the same time.
The amount of plating solution used per wafer can be significantly reduced, the equipment size per processing capacity can be reduced, and there is no need to supply the plating solution by jetting as in the conventional method. It is possible to greatly simplify the device elements such as the liquid supply mechanism.
【図1】本発明によるめっき用ラックの側面図。FIG. 1 is a side view of a plating rack according to the present invention.
【図2】図1中のSA2 ─SA2 線に沿う断面図。FIG. 2 is a sectional view taken along the line SA 2 —SA 2 in FIG.
【図3】枠部材の保持溝への電極端子の組込み状態を示
す断面図。FIG. 3 is a cross-sectional view showing a state where the electrode terminals are assembled in the holding grooves of the frame member.
【図4】図1のめっき用ラックを用いためっき処理の状
態を示す断面図。FIG. 4 is a sectional view showing a state of a plating process using the plating rack of FIG.
【図5】従来のめっき処理システムの構成図。FIG. 5 is a block diagram of a conventional plating system.
1 めっき用ラック 2 枠体 3 回転力伝達部 4 保持溝 5 枠部材 6 電極端子 7 めっき槽 M めっき液 W ウエーハ 1 Plating rack 2 Frame 3 Rotational force transmission part 4 Holding groove 5 Frame member 6 Electrode terminal 7 Plating tank M Plating solution W Wafer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C25D 7/12 H01L 21/68 N 21/321 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location C25D 7/12 H01L 21/68 N 21/321
Claims (4)
させる状態でウエーハを保持するウエーハのめっき用ラ
ックにおいて、それぞれ内周面に2本の保持溝が形成さ
れた半環状の枠部材を互いの一端で回動可能に組み合わ
せて保持対象のウエーハの外周に相似な環状に形成した
枠体を有し、この枠体における両枠部材の各保持溝にそ
れぞれの周縁部を嵌合させることで2枚一組のウエーハ
をそれぞれのめっき対象面が表側になる背中合わせにし
て保持させるようにしたことを特徴とするウエーハのめ
っき用ラック。1. A rack for plating a wafer, which holds a wafer in a state where a surface to be plated is selectively brought into contact with a plating solution, comprising a semi-annular frame member having two holding grooves formed on an inner peripheral surface thereof. To have a frame body formed in an annular shape similar to the outer periphery of the wafer to be held by being rotatably combined at one end of each other, and fitting the respective peripheral portions to the respective holding grooves of both frame members in this frame body 2. A rack for plating a wafer, characterized in that a set of two wafers is held back to back with the surfaces to be plated on the front side.
出させて設け、保持溝にウエーハの周縁部を嵌合させる
際にこの電極端子の先端部で対応部位のレジストを削り
取ってウエーハへの通電を行なえるようにした請求項1
記載のめっき用ラック。2. The wafer is provided by projecting the tip of an electrode terminal on the inner wall of the holding groove, and scraping off the resist at the corresponding portion at the tip of the electrode terminal when fitting the peripheral edge of the wafer into the holding groove. Claim 1 which can energize electricity to
The described rack for plating.
ックを用いてウエーハにめっきを施すめっき方法であっ
て、2枚一組のウエーハを保持させためっき用ラックを
めっき槽内のめっき液に浸漬させ、この浸漬状態で各ウ
エーハのめっき対象面にめっき液を流動的に接触させて
めっきを施すようにしてなるめっき方法。3. A plating method for plating a wafer using the plating rack according to claim 1 or 2, wherein the plating rack holding a set of two wafers is plated in a plating tank. A plating method in which a plating solution is immersed in a liquid and the surface of each wafer to be plated is brought into fluid contact with the plating solution to perform plating.
ウエーハに対するめっき液の流動状態を与えるようにし
た請求項3記載のめっき方法。4. The plating method according to claim 3, wherein the plating rack is rotated to impart a flow state of the plating solution to the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3614694A JP3286063B2 (en) | 1994-03-07 | 1994-03-07 | Wafer plating rack and plating method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3614694A JP3286063B2 (en) | 1994-03-07 | 1994-03-07 | Wafer plating rack and plating method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07243097A true JPH07243097A (en) | 1995-09-19 |
| JP3286063B2 JP3286063B2 (en) | 2002-05-27 |
Family
ID=12461660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3614694A Expired - Fee Related JP3286063B2 (en) | 1994-03-07 | 1994-03-07 | Wafer plating rack and plating method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3286063B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015198955A1 (en) * | 2014-06-27 | 2015-12-30 | 株式会社村田製作所 | Plating device |
| JP2017137523A (en) * | 2016-02-01 | 2017-08-10 | アスカコーポレーション株式会社 | Semiconductor wafer |
-
1994
- 1994-03-07 JP JP3614694A patent/JP3286063B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015198955A1 (en) * | 2014-06-27 | 2015-12-30 | 株式会社村田製作所 | Plating device |
| KR20170008300A (en) | 2014-06-27 | 2017-01-23 | 가부시키가이샤 무라타 세이사쿠쇼 | Plating device |
| JPWO2015198955A1 (en) * | 2014-06-27 | 2017-04-27 | 株式会社村田製作所 | Plating equipment |
| JP2017137523A (en) * | 2016-02-01 | 2017-08-10 | アスカコーポレーション株式会社 | Semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3286063B2 (en) | 2002-05-27 |
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