JPH0725700A - Method for manufacturing superconductor and thin film superconductor - Google Patents

Method for manufacturing superconductor and thin film superconductor

Info

Publication number
JPH0725700A
JPH0725700A JP5258163A JP25816393A JPH0725700A JP H0725700 A JPH0725700 A JP H0725700A JP 5258163 A JP5258163 A JP 5258163A JP 25816393 A JP25816393 A JP 25816393A JP H0725700 A JPH0725700 A JP H0725700A
Authority
JP
Japan
Prior art keywords
thin film
mercury
alkaline earth
superconductor
earth element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5258163A
Other languages
Japanese (ja)
Inventor
Hideaki Adachi
秀明 足立
Kentaro Setsune
謙太郎 瀬恒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5258163A priority Critical patent/JPH0725700A/en
Priority to US08/239,963 priority patent/US5462921A/en
Priority to DE69404214T priority patent/DE69404214T2/en
Priority to EP94303459A priority patent/EP0624910B1/en
Publication of JPH0725700A publication Critical patent/JPH0725700A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/60Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

PURPOSE:To obtain a new mercury-based oxide superconductor having >100K critical temperature and to provide a method for formation of a thin film. CONSTITUTION:This substance is obtained by forming a coating film composed mainly of mercury, an alkaline earth element (Ba or Ca) and copper on a base, subsequently heat-treating the base and the thin film and this substance has a chemical formula of HgBa2CaCu2O6+x (-1<x<1) and a crystal structure in which an oxygen-deficient perovskite layer 14 containing two CuO5 pyramids 12 facing to each other and sandwiching a uniatom layer 11 of Ca element belonging to an alkaline earth element is sandwiched between a pair of uniatom layers 15 each composed mainly of mercury. In addition, the mercury-based thin film superconductor can be produced even in a low vapor pressure Hg system by forming a coating film composed mainly of mercury, an alkaline earth element and copper on a base and heat-treating the base and the coating film in a low-oxidative atmosphere at a low temperature.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、100K以上の臨界温
度を持つ新規の銅酸化物超電導体、および薄膜製造方法
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a novel copper oxide superconductor having a critical temperature of 100 K or higher, and a thin film manufacturing method.

【0002】[0002]

【従来の技術】高温超伝導体として、ミュラー等により
ペロブスカイト類型構造の酸化物超伝導体が発見された
後、種々の化学組成を持つペロブスカイト類型構造の酸
化物系で超伝導性の確認が為された。
2. Description of the Related Art As a high temperature superconductor, after the discovery of an oxide superconductor having a perovskite type structure by Muller et al., The superconductivity of an oxide system having a perovskite type structure having various chemical compositions was confirmed. Was done.

【0003】その後、主体成分に水銀を含むペロブスカ
イト類型構造のHgBa2CuO4+x化合物が、臨界温度
94Kの超伝導性を示すことが発見された(ネイチャー
第362巻第226頁(S. N. Putilin他, Nature, Vol.
362, p.226 (1993))。この物質は、CuO6八面体を含
むペロブスカイト層Ba2CuO4が、水銀元素を主成分
とする1原子層で挟まれた結晶構造を持つ考えられてい
る。
Thereafter, it was discovered that a HgBa 2 CuO 4 + x compound having a perovskite type structure containing mercury as a main component exhibits superconductivity at a critical temperature of 94 K (Nature 362, 226 (SN Putilin et al. , Nature, Vol.
362, p. 226 (1993)). It is considered that this substance has a crystal structure in which a perovskite layer Ba 2 CuO 4 containing a CuO 6 octahedron is sandwiched between monoatomic layers containing mercury element as a main component.

【0004】[0004]

【発明が解決しようとする課題】この水銀を含む超伝導
体を、液体窒素温度(77K)で使おうとした場合、温
度マージンを見込むと、ちょうど限界の臨界温度であ
り、液体窒素温度で安定に使用するにはさらに臨界温度
の向上が必要とされる。
When the superconductor containing mercury is to be used at liquid nitrogen temperature (77K), the temperature margin is taken into consideration, and it is just the critical temperature, and it is stable at liquid nitrogen temperature. Further improvement in critical temperature is required for use.

【0005】また、従来この系の物質は、セラミックス
の形態でしか得られておらず、電子デバイス等に工業的
応用を行なうには、薄膜の形態に加工することが必須で
あるが、この水銀系超伝導体は、水銀元素の蒸気圧が高
いこともあって未だ薄膜が得られていない。
Conventionally, this type of substance has been obtained only in the form of ceramics, and it is essential to process it into a thin film form for industrial application to electronic devices and the like. A thin film of a superconducting material has not yet been obtained because the vapor pressure of elemental mercury is high.

【0006】本発明は、臨界温度が液体窒素を充分に越
える超伝導体の提供と、薄膜化が可能な製造方法とを提
供することを目的とする。
It is an object of the present invention to provide a superconductor having a critical temperature sufficiently higher than that of liquid nitrogen and a manufacturing method capable of forming a thin film.

【0007】[0007]

【課題を解決するための手段】上記問題点を克服する本
発明の超伝導体は、水銀、アルカリ土類元素、銅の酸素
物からなり、アルカリ土類元素の1原子層を介して向か
い合った2つのCuO 5ピラミッドを含む酸素欠損ペロ
ブスカイト層が、水銀を主成分とする1原子層で挟まれ
た結晶構造の、化学式HgA3Cu26+x(-1<x<1)で表
される物質で構成するというものである。
[Means for Solving the Problems] A book that overcomes the above problems
The superconductor of the invention is mercury, alkaline earth elements, copper oxygen.
Composed of a material, and goes through one atomic layer of alkaline earth element
Two CuO that met each other FiveOxygen-deficient pero containing pyramids
The skeleton layer is sandwiched by one atomic layer containing mercury as the main component.
Chemical structure of HgA3Cu2O6 + xTable with (-1 <x <1)
It is composed of substances that are processed.

【0008】また、本発明の他の超伝導体は、水銀、ア
ルカリ土類元素、銅の酸素物からなり、1枚のCuO2
面および両側の1原子層のアルカリ土類元素を介して向
かい合った2つのCuO5ピラミッドを含む酸素欠損ペ
ロブスカイトト層が、水銀を主成分とする1原子層で挟
まれた結晶構造の、化学式HgA4Cu38+x(-1<x<1)
で表される物質で構成するというものである。
Further, another superconductor of the present invention comprises mercury, an alkaline earth element, and an oxygen compound of copper, and a sheet of CuO 2
A chemical formula HgA having a crystal structure in which an oxygen-deficient perovskite layer containing two CuO 5 pyramids facing each other with one atomic layer of alkaline earth element on the surface and both sides is sandwiched by one atomic layer containing mercury as a main component. 4 Cu 3 O 8 + x (-1 <x <1)
It is composed of a substance represented by.

【0009】また、本発明における超伝導体の薄膜製造
方法としては、基体上に水銀、アルカリ土類元素、銅を
主体成分とする被膜を設け、前記基体および被膜を熱処
理をして作製するというものである。特に従来の酸化物
超伝導体に比べて比較的低温かつ低酸化雰囲気で熱処理
を行うものである。
In addition, as a method for producing a thin film of a superconductor in the present invention, a coating containing mercury, an alkaline earth element, and copper as a main component is provided on a substrate, and the substrate and the coating are heat-treated. It is a thing. In particular, the heat treatment is performed at a relatively low temperature and a low oxidizing atmosphere as compared with the conventional oxide superconductor.

【0010】[0010]

【作用】本発明の超伝導体の臨界温度が高くなった理由
は、超伝導理論が未だ確立していないため定かではない
が、従来の水銀を含む超伝導体が、単位格子当り1枚の
CuO2面を有するのに対し、本発明の超伝導体は、2
枚あるいは3枚を持つことが関係していると推定され
る。
The reason why the critical temperature of the superconductor of the present invention becomes high is not clear because the superconductivity theory has not been established yet. However, the conventional superconductor containing mercury has one sheet per unit lattice. While having a CuO 2 surface, the superconductor of the present invention has 2
It is presumed that having three or three sheets is related.

【0011】この場合、一般にCuO2面数が増えれば
臨界温度が必ず増すというものではなく、実際に物質の
合成を行うことにより初めて判断されるものである。
In this case, the critical temperature generally does not necessarily increase as the number of CuO 2 planes increases, but it can be determined only by actually synthesizing the substance.

【0012】しかし、これまで水銀、アルカリ土類元
素、銅からなる酸化物において、CuO2面が2枚以上
持つ物質は合成されていなかった。そこで本発明者ら
は、この合成方法を発見することにより、本発明の超伝
導体を見い出すことが出来た。
However, up to now, in the oxides composed of mercury, alkaline earth elements and copper, a substance having two or more CuO 2 faces has not been synthesized. Therefore, the present inventors were able to find the superconductor of the present invention by discovering this synthesis method.

【0013】また、本発明の製造方法によりCuO2
を2枚以上有する物質が合成できたのは、薄膜製造プロ
セスを応用したことにより、従来得られなかった非熱平
衡相の出現が可能になったためと考えられる。
Further, the reason why the material having two or more CuO 2 faces can be synthesized by the manufacturing method of the present invention is that the application of the thin film manufacturing process enables the appearance of a non-thermal equilibrium phase which has not been obtained conventionally. It is thought to be a tame.

【0014】同時に本製造方法は、蒸気圧の高い水銀元
素を含むため、従来得られていなかったこの系の薄膜
を、実現可能なものにした。
At the same time, the present manufacturing method, which contains a mercury element having a high vapor pressure, makes it possible to realize a thin film of this system which has not been obtained in the past.

【0015】薄膜製造プロセスは数多くあり、通常は成
膜時に基体を加熱して、結晶化した薄膜を形成するが、
水銀を含む系の物質では、基体に被膜を堆積した後、熱
処理時に結晶化させる方法をとることで、安定に薄膜合
成が出来ることを本発明者らは見い出した。
There are many thin film manufacturing processes, and a substrate is usually heated during film formation to form a crystallized thin film.
The present inventors have found that, in the case of a mercury-containing substance, a thin film can be stably synthesized by adopting a method in which a film is deposited on a substrate and then crystallized during heat treatment.

【0016】従来の酸化物超伝導薄膜を熱処理して得る
方法から類推すると、水銀系超伝導薄膜の場合にも、被
膜をセラミックスの焼成温度と同じ800℃程度で熱処
理すれば得られると考えられるが、本薄膜の場合には意
外にも従来では考えられない低い温度の650以上70
0℃以下の熱処理が適していることを見いだした。
By analogy with the conventional method of heat-treating an oxide superconducting thin film, it is considered that a mercury-based superconducting thin film can be obtained by heat-treating the coating at about 800 ° C., which is the same as the firing temperature of ceramics. However, in the case of this thin film, surprisingly, a low temperature of 650 or more, which cannot be considered in the past, is 70
It was found that a heat treatment at 0 ° C. or lower is suitable.

【0017】また、水銀系セラミックスの焼成時の様
に、例えばカプセルに封入して水銀蒸気を供給する必要
もなく、酸素を1/500から1/10気圧含む雰囲気
中で熱処理するだけで簡単に超伝導薄膜が得られること
も併せて確認した。
Further, it is not necessary to supply mercury vapor by encapsulating it in a capsule as in the case of burning mercury-based ceramics, and it is easy to perform heat treatment in an atmosphere containing 1/500 to 1/10 atmospheric pressure of oxygen. It was also confirmed that a superconducting thin film could be obtained.

【0018】さらに、従来の酸化物超伝導薄膜を熱処理
で作製する場合、酸化を促進させるのがよいとされてき
たが、本発明の水銀系超伝導薄膜では酸素分圧の低いと
きのみ作製が可能であることも見いだした。
Further, it has been said that when a conventional oxide superconducting thin film is produced by heat treatment, it is preferable to promote oxidation, but the mercury-based superconducting thin film of the present invention can be produced only when the oxygen partial pressure is low. I also found it possible.

【0019】[0019]

【実施例】以下具体的実施例を挙げ、本発明をより詳細
に説明する。
EXAMPLES The present invention will be described in more detail with reference to specific examples.

【0020】(実施例1)酸化マグネシウムMgO単結
晶(100)面基体上に、スパッタリング法を用いてH
g-Ba-Ca-Cu-O薄膜を1μm形成した。スパッタ
ターゲットは、Ba2CuO3、Ca2CuO3、CuOお
よびHgOの各粉末を、金属組成Hg:Ba:Ca:Cu
=2:2:1:2となるように混合し、円盤状に成形した
ものを用い、アルゴン雰囲気3Paのガス圧で50Wの
スパッタリングを行い成膜した。
Example 1 On a magnesium oxide MgO single crystal (100) plane substrate, H was formed by a sputtering method.
A g-Ba-Ca-Cu-O thin film was formed to a thickness of 1 μm. As the sputter target, powders of Ba 2 CuO 3 , Ca 2 CuO 3 , CuO and HgO were used, and a metal composition of Hg: Ba: Ca: Cu was used.
= 2: 2: 1: 2 and mixed into a disk shape, and sputtering was performed at 50 W under a gas pressure of 3 Pa in an argon atmosphere to form a film.

【0021】形成温度を室温とした場合、薄膜は非晶質
状態であり、膜組成はHg:Ba:Ca:Cu=2.5:2:
0.7:1.7であった。
When the formation temperature is room temperature, the thin film is in an amorphous state and the film composition is Hg: Ba: Ca: Cu = 2.5: 2:
It was 0.7: 1.7.

【0022】このようにして形成した被膜の熱処理を行
い、薄膜の特性を評価した。但し、熱処理は、ガラス製
のカプセルに被膜の付いた基体を入れ蓋をして、10%
酸素を含む窒素流中で赤外線ランプにより加熱して行っ
た。
The film thus formed was heat-treated to evaluate the characteristics of the thin film. However, the heat treatment is 10% by putting the substrate with the coating in a glass capsule and closing the lid.
It was carried out by heating with an infrared lamp in a stream of nitrogen containing oxygen.

【0023】650℃で20分間熱処理を行った場合、
膜組成はHg:Ba:Ca:Cu=0.8:2:0.4:1.5
となり、軸長9.5Åの配向した薄膜が得られた。
When heat treatment is performed at 650 ° C. for 20 minutes,
The film composition is Hg: Ba: Ca: Cu = 0.8: 2: 0.4: 1.5
Thus, an oriented thin film having an axial length of 9.5Å was obtained.

【0024】詳細な分析の結果、この薄膜は、これまで
知られている水銀を含む超伝導体、すなわち、CuO6
八面体を含むペロブスカイト層が、水銀元素を主成分と
する1原子層で挟まれた結晶構造を持つHgBa2Cu
4+x(但し、-1<x<1)化合物のc軸配向膜であった。こ
の種の水銀を含む化合物の薄膜が、この方法で作製可能
であることが判った。
As a result of detailed analysis, this thin film was found to be a known superconductor containing mercury, that is, CuO 6
HgBa 2 Cu having a crystal structure in which a perovskite layer containing an octahedron is sandwiched between monoatomic layers containing mercury element as a main component.
It was a c-axis oriented film of an O 4 + x (however, -1 <x <1) compound. It has been found that thin films of compounds of this type containing mercury can be produced by this method.

【0025】この薄膜の電気抵抗率は、室温で1mΩcm
と低く、低温の90Kで超伝導転移による抵抗ドロップ
をみせた。
The electrical resistivity of this thin film is 1 mΩcm at room temperature.
The resistance drop due to the superconducting transition was shown at 90 K at a low temperature.

【0026】熱処理をやや低い温度、すなわち620℃
で20分間行った際には、膜組成Hg:Ba:Ca:Cu
=1:2:0.8:1.7で、軸長12.7Åの配向した薄膜
が得られた。
Heat treatment is performed at a slightly low temperature, that is, 620 ° C.
Film composition Hg: Ba: Ca: Cu after 20 minutes
= 1: 2: 0.8: 1.7, an oriented thin film having an axial length of 12.7Å was obtained.

【0027】得られた物質は、分析の結果図1に示す結
晶構造すなわち、Ca元素の1原子層11を介して向か
い合った2つのCuO5ピラミッド12、およびBa元
素13からなる酸素欠損ペロブスカイト層14が、水銀
を主成分とする1原子層15で挟まれた構造を持つ、H
gBa2CaCu26+x(但し、-1<x<1)化合物のc軸配
向膜であった。
As a result of analysis, the obtained substance has a crystal structure shown in FIG. 1, that is, two CuO 5 pyramids 12 facing each other through a monoatomic layer 11 of Ca element and an oxygen-deficient perovskite layer 14 composed of Ba element 13. , H having a structure sandwiched between monoatomic layers 15 containing mercury as a main component,
The film was a c-axis alignment film of a gBa 2 CaCu 2 O 6 + x (where -1 <x <1) compound.

【0028】この薄膜は、従来の水銀を含む超伝導体の
臨界温度よりも高い102Kで、超伝導転移による抵抗
ドロップをみせた。すなわち、HgBa2CaCu2
6+xは新しい超伝導体であることが確認された。
This thin film showed a resistance drop due to the superconducting transition at 102 K, which is higher than the critical temperature of the conventional superconductor containing mercury. That is, HgBa 2 CaCu 2 O
It was confirmed that 6 + x is a new superconductor.

【0029】なお、本実施例ではアルカリ土類元素の組
合せとしてBaとCaを用いたが、これ以外のアルカリ
土類元素の組合せでも、超伝導体が作製できること勿論
である。
Although Ba and Ca are used as the combination of alkaline earth elements in this embodiment, it is needless to say that a superconductor can be produced by a combination of other alkaline earth elements.

【0030】また、熱処理時に、被膜の付いた基体と一
緒に、水銀を含む化合物の粉体あるいはセラミックペレ
ットを入れておくと、被膜からの水銀元素の蒸発が抑え
られて超伝導体作製の再現性向上に有効であることも確
認した。
When a powder of a compound containing mercury or a ceramic pellet is put together with the substrate with the coating during the heat treatment, the evaporation of elemental mercury from the coating is suppressed and the production of the superconductor is reproduced. It was also confirmed to be effective in improving the sex.

【0031】さらに、熱処理後の冷却は、毎時500℃
以上の急冷にした方が超伝導特性がよいことも併せて確
認した。
Further, cooling after the heat treatment is performed at 500 ° C./hour.
It was also confirmed that the above rapid cooling has better superconducting properties.

【0032】(実施例2)酸化マグネシウムMgO単結
晶(100)面基体上に、金属組成Hg:Ba:Ca:C
u=2:2:2.2:3.2のターゲットを用いて、スパッ
タリング成膜を行った。膜組成は、Hg:Ba:Ca:C
u=2.5:2:1.8:3.2であった。
(Example 2) On a magnesium oxide MgO single crystal (100) plane substrate, a metal composition Hg: Ba: Ca: C was prepared.
Sputtering was performed using a target of u = 2: 2: 2.2: 3.2. The film composition is Hg: Ba: Ca: C
u = 2.5: 2: 1.8: 3.2.

【0033】この被膜をガラス製のカプセルに入れ蓋を
して、620℃で20分間熱処理を行った。その結果、
膜組成Hg:Ba:Ca:Cu=1:2:2:3で、軸長1
5.9Åの配向した薄膜が得られた。
This coating was put in a glass capsule and covered with a cap, and heat-treated at 620 ° C. for 20 minutes. as a result,
Film composition Hg: Ba: Ca: Cu = 1: 2: 2: 3, axial length 1
A oriented film of 5.9Å was obtained.

【0034】得られた物質は、分析の結果図2に示す結
晶構造すなわち、1枚のCuO2面21および両側の1
原子層のCa元素22を介して向かい合った2つのCu
5ピラミッド23、およびBa元素24からなる酸素
欠損ペロブスカイトト層25が、水銀を主成分とする1
原子層26で挟まれた構造を持つ、HgBa2Ca2Cu
38+x(但し、-1<x<1)化合物のc軸配向膜であった。
As a result of the analysis, the obtained substance had a crystal structure shown in FIG. 2, that is, one CuO 2 surface 21 and 1 on both sides.
Two Cu facing each other through the Ca element 22 in the atomic layer
The oxygen-deficient perovskite layer 25 composed of the O 5 pyramid 23 and the Ba element 24 contains mercury as a main component 1.
HgBa 2 Ca 2 Cu with a structure sandwiched by atomic layers 26
The film was a c-axis oriented film of 3 O 8 + x (however, -1 <x <1) compound.

【0035】この薄膜は、従来の水銀を含む超伝導体の
臨界温度よりも高い105Kで、超伝導転移による抵抗
ドロップをみせた。すなわち、HgBa2Ca2Cu3
8+xは新しい超伝導体であることが確認された。
This thin film showed a resistance drop due to the superconducting transition at 105 K, which is higher than the critical temperature of a conventional superconductor containing mercury. That is, HgBa 2 Ca 2 Cu 3 O
It was confirmed that 8 + x is a new superconductor.

【0036】なお、薄膜の組成として、主体成分の水
銀、アルカリ土類元素、銅以外に微量成分として、例え
ば鉛などの他の成分が入った場合にも、本発明の薄膜製
造方法により超伝導薄膜が作製できること勿論である。
Even if the composition of the thin film contains other components such as lead as a minor component in addition to the main components such as mercury, alkaline earth elements, and copper, the superconductivity of the thin film production method of the present invention can be improved. Needless to say, a thin film can be produced.

【0037】(実施例3)チタン酸ストロンチウムSr
TiO3単結晶(100)面基体上に、スパッタリング
法を用いてHg-Ba-Cu-O薄膜を5000Å形成し
た。スパッタターゲットの金属組成はHg:Ba:Cu=
2.5:2:1とし、アルゴン雰囲気0.5Paのガス圧で
スパッタリングを行った。基板加熱を行わずに室温で形
成した被膜の組成は条件により多少変動したが、およそ
Hg:Ba:Cu=(1−y):2:(1+y)(但し、
0≦y≦0.7)程度の非晶質膜であった。
(Example 3) Strontium titanate Sr
An Hg-Ba-Cu-O thin film of 5000 Å was formed on the TiO 3 single crystal (100) plane substrate by a sputtering method. The metal composition of the sputter target is Hg: Ba: Cu =
Sputtering was carried out at a gas pressure of 0.5 Pa with an argon atmosphere of 2.5: 2: 1. The composition of the film formed at room temperature without heating the substrate varied somewhat depending on the conditions, but about Hg: Ba: Cu = (1-y): 2: (1 + y) (however,
The film was an amorphous film of 0 ≦ y ≦ 0.7).

【0038】被膜の熱処理条件を変えた場合の薄膜超伝
導体の特性について検討した。まず、1%酸素を含む窒
素雰囲気中で加熱した。加熱温度が600℃以上の際に
水銀系超伝導体HgBa2CuO4+xの構造が結晶化する
ことを確認した。しかし750℃以上では水銀元素が膜
中から離脱して、もはや構造を作ることが出来なかっ
た。この結果、薄膜において良質のHgBa2CuO4+x
構造を作るには、従来の酸化物超伝導体の熱処理法に比
べて低温の650℃から700℃の間が適していること
を見いだした。
The characteristics of the thin film superconductor when the heat treatment conditions of the coating were changed were examined. First, heating was performed in a nitrogen atmosphere containing 1% oxygen. It was confirmed that the structure of the mercury-based superconductor HgBa 2 CuO 4 + x was crystallized when the heating temperature was 600 ° C. or higher. However, at 750 ° C. or higher, elemental mercury was released from the film, and the structure could no longer be formed. As a result, in the thin film, good quality HgBa 2 CuO 4 + x
It was found that a low temperature between 650 ° C. and 700 ° C. is suitable for forming the structure, as compared with the conventional heat treatment method for oxide superconductors.

【0039】次に、熱処理の昇温速度について検討し
た。従来の酸化物超伝導薄膜の熱処理では毎時100℃
以下の遅い昇降速度がよいとされていたが、水銀系超伝
導薄膜の場合、毎時500℃以上の急速な昇降が結晶構
造形成に良いことも併せて見いだした。図3は、熱処理
温度670℃で45分間加熱して作製した膜のX線回折
パターンを示す。軸長9.5Åのc軸配向した良質な薄
膜が得られていることが判る。
Next, the heating rate of the heat treatment was examined. In conventional heat treatment of oxide superconducting thin film, 100 ℃ / hour
Although it was said that the slow ascending / descending speed described below was good, it was also found that in the case of a mercury-based superconducting thin film, a rapid ascending / descending of 500 ° C. or more per hour is good for crystal structure formation. FIG. 3 shows an X-ray diffraction pattern of a film produced by heating at a heat treatment temperature of 670 ° C. for 45 minutes. It can be seen that a good quality c-axis oriented thin film with an axial length of 9.5Å was obtained.

【0040】次に熱処理雰囲気中の酸素の含有量を変え
てその影響を調べた。熱処理条件を670℃45分と
し、窒素中の酸素量を0%〜50%まで変化させてX線
回折パターンの004回折ピーク強度を測定した。
Next, the effect was investigated by changing the oxygen content in the heat treatment atmosphere. The heat treatment condition was 670 ° C. for 45 minutes, the oxygen content in nitrogen was changed from 0% to 50%, and the 004 diffraction peak intensity of the X-ray diffraction pattern was measured.

【0041】図4は、その相対強度と酸素分圧の関係の
結果である。従来の酸化物超伝導薄膜を熱処理して作製
する場合、酸化を促進させるために酸素量が多い方がよ
いとされていたが、水銀系超伝導薄膜の場合逆に酸素量
が多いと結晶性が悪くなるという意外な結果であった。
FIG. 4 shows the result of the relationship between the relative intensity and the oxygen partial pressure. When a conventional oxide superconducting thin film is prepared by heat treatment, it was said that it is better to have a large amount of oxygen in order to accelerate the oxidation. It was an unexpected result that it became worse.

【0042】また、図4より、酸素分圧が1/500〜
1/10気圧の範囲において良好な結晶性の薄膜が得ら
れることが判明した。この酸素量で熱処理して作られた
膜において、超伝導転移温度90K以上の特性が得られ
た。
From FIG. 4, the oxygen partial pressure is 1/500 to
It was found that a thin film having good crystallinity can be obtained in the range of 1/10 atmospheric pressure. A film having a superconducting transition temperature of 90 K or higher was obtained in the film formed by heat treatment with this oxygen content.

【0043】この薄膜をさらに酸素中で300〜500
℃程度の低温熱処理を施すと、超伝導特性の再現性の向
上がみられることも併せて確認した。
This thin film was further exposed to 300 to 500 in oxygen.
It was also confirmed that the low temperature heat treatment at about ℃ improved the reproducibility of superconducting properties.

【0044】なお、本実施例ではアルカリ土類元素とし
てBaを用いたが、水銀系超伝導薄膜はこれ以外のアル
カリ土類元素の組合せでも構成できること勿論である。
Although Ba was used as the alkaline earth element in this embodiment, it is a matter of course that the mercury-based superconducting thin film can be formed by a combination of other alkaline earth elements.

【0045】また、本実施例では熱処理時に酸素と窒素
の混合ガスを用いたが、酸素さえ所定の量含まれていれ
ば、例えばアルゴンなどの不活性ガスと酸素の混合ガス
でも同様である。
Further, in this embodiment, a mixed gas of oxygen and nitrogen was used at the time of heat treatment, but a mixed gas of an inert gas such as argon and oxygen may also be used as long as a predetermined amount of oxygen is contained.

【0046】[0046]

【発明の効果】以上のように本発明の超伝導体は、水銀
(Hg)、アルカリ土類元素(A)、銅(Cu)からな
る酸素物で、前記アルカリ土類元素の1原子層を介して
向かい合った2つのCuO5ピラミッドを含む酸素欠損
ペロブスカイト層A3Cu26が、水銀を主成分とする
1原子層で挟まれた結晶構造を持ち、化学式HgA3
26+x(但し、-1<x<1)の物質、または、水銀(H
g)、アルカリ土類元素(A)、銅(Cu)からなる酸
素物で、1枚のCuO2面および両側の1原子層の前記
アルカリ土類元素を介して向かい合った2つのCuO5
ピラミッドを含む酸素欠損ペロブスカイトト層A4Cu3
8が、水銀を主成分とする1原子層で挟まれた結晶構
造を持ち、化学式HgA4Cu38+x(但し、-1<x<1)の
物質であるため、100Kを越える臨界温度を持つ新規
の水銀を含む酸化物超伝導体である。
INDUSTRIAL APPLICABILITY As described above, the superconductor of the present invention is an oxygen substance composed of mercury (Hg), alkaline earth element (A) and copper (Cu). An oxygen-deficient perovskite layer A 3 Cu 2 O 6 containing two CuO 5 pyramids facing each other has a crystal structure sandwiched by one atomic layer containing mercury as a main component, and has a chemical formula of HgA 3 C
u 2 O 6 + x (provided that -1 <x <1) or mercury (H
g), an alkaline earth element (A), and an oxygenate composed of copper (Cu), and two CuO 5 facing each other through one CuO 2 surface and one atomic layer of the alkaline earth element on both sides.
Oxygen-deficient perovskite layer containing pyramids A 4 Cu 3
O 8 has a crystal structure in which it is sandwiched by one atomic layer containing mercury as its main component and has a chemical formula of HgA 4 Cu 3 O 8 + x (however, -1 <x <1). It is a novel mercury-containing oxide superconductor with a critical temperature.

【0047】本発明の超伝導体は、100Kを越えるた
め、安価で大量供給の可能な液体窒素を冷媒とした77
Kでの安定な使用が可能となり、この結果水銀を含む酸
化物超伝導体の実用化も期待できるようになった。
Since the superconductor of the present invention has a temperature exceeding 100K, it is inexpensive and can be supplied in large quantities.
Stable use of K is possible, and as a result, commercialization of an oxide superconductor containing mercury can be expected.

【0048】また、本発明は基体上に水銀、アルカリ土
類元素、銅を主体成分とする被膜を設け、前記基体およ
び被膜を熱処理する製造方法であり、薄膜化によるこの
系の電子デバイス応用を可能ならしめるものであり、本
発明の工業的価値は大きい。
Further, the present invention is a manufacturing method in which a coating containing mercury, an alkaline earth element, and copper as a main component is provided on a substrate, and the substrate and the coating are heat-treated. If possible, the industrial value of the present invention is great.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例で作製されたHgBa2Ca
Cu26+x薄膜の結晶構造図
FIG. 1 shows HgBa 2 Ca produced in one example of the present invention.
Crystal structure diagram of Cu 2 O 6 + x thin film

【図2】本発明の一実施例で作製されたHgBa2Ca2
Cu38+x薄膜の結晶構造図
FIG. 2 HgBa 2 Ca 2 produced in one example of the present invention
Crystal structure diagram of Cu 3 O 8 + x thin film

【図3】本発明の一実施例で作製されたHgBa2Cu
4+x薄膜のX線回折パターン
FIG. 3 is a graph showing HgBa 2 Cu prepared according to an embodiment of the present invention.
X-ray diffraction pattern of O 4 + x thin film

【図4】本発明の一実施例で作製されたHg−Ba−C
u−O薄膜の結晶性と熱処理中の酸素量の間系図
FIG. 4 Hg-Ba-C produced in one example of the present invention
System diagram between crystallinity of u-O thin film and oxygen content during heat treatment

【符号の説明】 11 Ca元素1原子層 12 CuO5ピラミッド 13 Ba元素 14 酸素欠損ペロブスカイト層 15 水銀元素1原子層 21 CuO2面 22 Ca元素1原子層 23 CuO5ピラミッド 24 Ba元素 25 酸素欠損ペロブスカイト層 26 水銀元素1原子層[Explanation of symbols] 11 Ca element 1 atomic layer 12 CuO 5 pyramid 13 Ba element 14 Oxygen-deficient perovskite layer 15 Mercury element 1 atomic layer 21 CuO 2 surface 22 Ca element 1 atomic layer 23 CuO 5 pyramid 24 Ba element 25 Oxygen-deficient perovskite Layer 26 1 elemental atomic layer of mercury

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01B 12/00 ZAA 7244−5G H01L 39/24 ZAA B 9276−4M ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01B 12/00 ZAA 7244-5G H01L 39/24 ZAA B 9276-4M

Claims (11)

【特許請求の範囲】[Claims] 【請求項1】水銀(Hg)、アルカリ土類元素(A)、
銅(Cu)からなる酸素物で、前記アルカリ土類元素の
1原子層を介して向かい合った2つのCuO5ピラミッ
ドを含む酸素欠損ペロブスカイト層A3Cu26が、水
銀を主成分とする1原子層で挟まれた結晶構造を持ち、
化学式HgA3Cu26+xの物質であることを特徴とす
る超伝導体。ここでxは、−1<x<1の範囲の数値で
ある。
1. Mercury (Hg), alkaline earth element (A),
An oxygen deficient perovskite layer A 3 Cu 2 O 6 containing two CuO 5 pyramids, which are oxygen compounds made of copper (Cu) and face each other through one atomic layer of the alkaline earth element, contains mercury as a main component. Has a crystal structure sandwiched between atomic layers,
A superconductor characterized by being a substance having a chemical formula of HgA 3 Cu 2 O 6 + x . Here, x is a numerical value in the range of -1 <x <1.
【請求項2】アルカリ土類元素Aが、バリウム(Ba)
とカルシウム(Ca)の組合せで構成され、HgBa2
CaCu26+xなる化学式の物質であることを特徴とす
る、請求項1記載の超伝導体。
2. The alkaline earth element A is barium (Ba).
And HgBa 2 composed of calcium and calcium (Ca).
The superconductor according to claim 1, which is a substance having a chemical formula of CaCu 2 O 6 + x .
【請求項3】水銀(Hg)、アルカリ土類元素(A)、
銅(Cu)からなる酸素物で、1枚のCuO2面および
両側の1原子層の前記アルカリ土類元素を介して向かい
合った2つのCuO5ピラミッドを含む酸素欠損ペロブ
スカイト層A4Cu38が、水銀を主成分とする1原子
層で挟まれた結晶構造を持ち、化学式HgA4Cu3
8+xの物質であることを特徴とする超伝導体。ここでx
は、−1<x<1の範囲の数値である。
3. Mercury (Hg), alkaline earth element (A),
An oxygen deficient perovskite layer A 4 Cu 3 O 8 containing oxygen (Cu) containing two CuO 5 pyramids facing each other through one CuO 2 plane and one atomic layer of both sides of the alkaline earth element. Has a crystal structure sandwiched by one atomic layer containing mercury as a main component, and has a chemical formula of HgA 4 Cu 3 O
A superconductor characterized by being an 8 + x substance. Where x
Is a numerical value in the range of -1 <x <1.
【請求項4】アルカリ土類元素Aが、バリウム(Ba)
とカルシウム(Ca)の組合せで構成され、HgBa2
Ca2Cu38+xなる化学式の物質であることを特徴と
する、請求項3記載の超伝導体。
4. The alkaline earth element A is barium (Ba).
And HgBa 2 composed of calcium and calcium (Ca).
The superconductor according to claim 3, which is a substance having a chemical formula of Ca 2 Cu 3 O 8 + x .
【請求項5】基体上に水銀、アルカリ土類元素、銅を主
体成分とする被膜を設け、前記基体および被膜を熱処理
することを特徴とする薄膜超伝導体の製造方法。
5. A method for producing a thin film superconductor, which comprises providing a coating film containing mercury, an alkaline earth element, and copper as a main component on a substrate and heat treating the substrate and the coating film.
【請求項6】熱処理の温度が650以上700℃以下の
範囲であることを特徴とする、請求項5記載の薄膜超伝
導体の製造方法。
6. The method for producing a thin film superconductor according to claim 5, wherein the temperature of the heat treatment is in the range of 650 to 700 ° C.
【請求項7】熱処理の昇降速度が、毎時500℃以上で
あることを特徴とする、請求項5または6何れかに記載
の薄膜超伝導体の製造方法。
7. The method for producing a thin film superconductor according to claim 5, wherein the ascending / descending speed of the heat treatment is 500 ° C. or more per hour.
【請求項8】熱処理を1/500気圧以上1/10気圧
以下の範囲の酸素含有雰囲気で行うことを特徴とする、
請求項5〜7何れかに記載の薄膜超伝導体の製造方法。
8. The heat treatment is performed in an oxygen-containing atmosphere in the range of 1/500 atm to 1/10 atm.
A method for producing a thin film superconductor according to claim 5.
【請求項9】熱処理の後、さらに酸素中で300以上5
00℃以下の低温熱処理を加えることを特徴とする、請
求項5〜8何れかに記載の薄膜超伝導体の製造方法。
9. After heat treatment, further 300 or more 5 in oxygen
The method for producing a thin film superconductor according to claim 5, wherein a low temperature heat treatment at a temperature of 00 ° C. or less is applied.
【請求項10】薄膜超伝導体の組成比が、水銀(H
g)、アルカリ土類元素(A)、銅(Cu)とし、Hg
(1-y)2Cu(1+y)で表わすと、yが0≦y≦0.7の
値を主成分とすることを特徴とする、請求項5記載の薄
膜超伝導体の製造方法。
10. A thin film superconductor having a composition ratio of mercury (H
g), alkaline earth element (A), copper (Cu), Hg
The production of a thin film superconductor according to claim 5, characterized in that when represented by (1-y) A 2 Cu (1 + y) , y has a value of 0 ≦ y ≦ 0.7 as a main component. Method.
【請求項11】アルカリ土類元素(A)が、バリウム元
素であることを特徴とする、請求項5または10何れか
に記載の薄膜超伝導体の製造方法。
11. The method for producing a thin film superconductor according to claim 5, wherein the alkaline earth element (A) is a barium element.
JP5258163A 1993-05-14 1993-10-15 Method for manufacturing superconductor and thin film superconductor Pending JPH0725700A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP5258163A JPH0725700A (en) 1993-05-14 1993-10-15 Method for manufacturing superconductor and thin film superconductor
US08/239,963 US5462921A (en) 1993-05-14 1994-05-09 Method of forming Hg-containing oxide superconducting films
DE69404214T DE69404214T2 (en) 1993-05-14 1994-05-13 Process for producing an Hg-type superconducting thin film
EP94303459A EP0624910B1 (en) 1993-05-14 1994-05-13 Method of fabricating a Hg-based superconducting thin film

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5-112848 1993-05-14
JP11284893 1993-05-14
JP5258163A JPH0725700A (en) 1993-05-14 1993-10-15 Method for manufacturing superconductor and thin film superconductor

Publications (1)

Publication Number Publication Date
JPH0725700A true JPH0725700A (en) 1995-01-27

Family

ID=26451919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5258163A Pending JPH0725700A (en) 1993-05-14 1993-10-15 Method for manufacturing superconductor and thin film superconductor

Country Status (1)

Country Link
JP (1) JPH0725700A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0753212A (en) * 1993-08-13 1995-02-28 Agency Of Ind Science & Technol High temperature superconductor and its production
CN110670045A (en) * 2019-11-12 2020-01-10 复旦大学 Method for preparing organic-inorganic hybrid halogen perovskite material by atomic layer deposition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0753212A (en) * 1993-08-13 1995-02-28 Agency Of Ind Science & Technol High temperature superconductor and its production
CN110670045A (en) * 2019-11-12 2020-01-10 复旦大学 Method for preparing organic-inorganic hybrid halogen perovskite material by atomic layer deposition

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