JPH07261398A - エネルギー感受性材料及びそれらの使用方法 - Google Patents

エネルギー感受性材料及びそれらの使用方法

Info

Publication number
JPH07261398A
JPH07261398A JP7036387A JP3638795A JPH07261398A JP H07261398 A JPH07261398 A JP H07261398A JP 7036387 A JP7036387 A JP 7036387A JP 3638795 A JP3638795 A JP 3638795A JP H07261398 A JPH07261398 A JP H07261398A
Authority
JP
Japan
Prior art keywords
pattern
plasma
substrate
radiation
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP7036387A
Other languages
English (en)
Japanese (ja)
Inventor
Ajey M Joshi
マドハヴ ジョシ アジェイ
Timothy W Weidman
ウィリアム ウェイドマン ティモスィ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Inc
Original Assignee
American Telephone and Telegraph Co Inc
AT&T Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc, AT&T Inc filed Critical American Telephone and Telegraph Co Inc
Publication of JPH07261398A publication Critical patent/JPH07261398A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/167—Coating processes; Apparatus therefor from the gas phase, by plasma deposition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Silicon Polymers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP7036387A 1994-02-25 1995-02-24 エネルギー感受性材料及びそれらの使用方法 Withdrawn JPH07261398A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201823 1994-02-25
US08/201,823 US5635338A (en) 1992-04-29 1994-02-25 Energy sensitive materials and methods for their use

Publications (1)

Publication Number Publication Date
JPH07261398A true JPH07261398A (ja) 1995-10-13

Family

ID=22747452

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7036387A Withdrawn JPH07261398A (ja) 1994-02-25 1995-02-24 エネルギー感受性材料及びそれらの使用方法

Country Status (6)

Country Link
US (1) US5635338A (2)
EP (1) EP0670522A1 (2)
JP (1) JPH07261398A (2)
KR (1) KR950033680A (2)
CA (1) CA2135413C (2)
TW (1) TW274629B (2)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001297970A (ja) * 2000-04-13 2001-10-26 Fujitsu Ltd 薄膜パターン及びその形成方法
WO2007026652A1 (ja) * 2005-08-29 2007-03-08 Tokyo Ohka Kogyo Co., Ltd. 膜形成組成物、これを用いたパターン形成方法及び三次元モールド

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013418A (en) * 1992-04-29 2000-01-11 Lucent Technologies Inc. Method for developing images in energy sensitive materials
US6270948B1 (en) * 1996-08-22 2001-08-07 Kabushiki Kaisha Toshiba Method of forming pattern
US5885751A (en) * 1996-11-08 1999-03-23 Applied Materials, Inc. Method and apparatus for depositing deep UV photoresist films
WO1998056513A1 (en) * 1997-06-12 1998-12-17 Kubacki Ronald M Photosensitive organosilicon films
US6291356B1 (en) 1997-12-08 2001-09-18 Applied Materials, Inc. Method for etching silicon oxynitride and dielectric antireflection coatings
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
EP0942330A1 (en) 1998-03-11 1999-09-15 Applied Materials, Inc. Process for depositing and developing a plasma polymerized organosilicon photoresist film
JPH11307431A (ja) * 1998-04-23 1999-11-05 Sony Corp 半導体装置の製造方法
KR100881472B1 (ko) 1999-02-04 2009-02-05 어플라이드 머티어리얼스, 인코포레이티드 소정 기판 상에 놓여져 있는 패턴화된 마스크 표면 위로 적층 구조물을 증착하기 위한 방법
CA2367204A1 (en) * 1999-03-19 2000-09-28 Electron Vision Corporation Cluster tool for wafer processing having an electron beam exposure module
WO2002048264A1 (fr) * 2000-12-11 2002-06-20 Jsr Corporation Composition sensible aux rayonnements, a indice de refraction variable et procede pour modifier son indice de refraction
US6579730B2 (en) * 2001-07-18 2003-06-17 Applied Materials, Inc. Monitoring process for oxide removal
US20040157430A1 (en) * 2003-02-07 2004-08-12 Asml Netherlands B.V. Methods and apparatus for processing semiconductor wafers with plasma processing chambers in a wafer track environment
US7294449B1 (en) 2003-12-31 2007-11-13 Kovio, Inc. Radiation patternable functional materials, methods of their use, and structures formed therefrom

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129345A (en) * 1979-03-29 1980-10-07 Ulvac Corp Electron beam plate making method by vapor phase film formation and vapor phase development
WO1989007285A1 (en) * 1988-01-29 1989-08-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
CA1334911C (en) * 1989-02-15 1995-03-28 David M. Dobuzinsky Process for the vapor deposition of polysilanes
US5439780A (en) * 1992-04-29 1995-08-08 At&T Corp. Energy sensitive materials and methods for their use

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001297970A (ja) * 2000-04-13 2001-10-26 Fujitsu Ltd 薄膜パターン及びその形成方法
WO2007026652A1 (ja) * 2005-08-29 2007-03-08 Tokyo Ohka Kogyo Co., Ltd. 膜形成組成物、これを用いたパターン形成方法及び三次元モールド

Also Published As

Publication number Publication date
TW274629B (2) 1996-04-21
EP0670522A1 (en) 1995-09-06
CA2135413C (en) 1999-11-02
US5635338A (en) 1997-06-03
CA2135413A1 (en) 1995-08-26
KR950033680A (ko) 1995-12-26

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Legal Events

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A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20020507