JPH07268640A - Electroless gold plating method - Google Patents
Electroless gold plating methodInfo
- Publication number
- JPH07268640A JPH07268640A JP8379794A JP8379794A JPH07268640A JP H07268640 A JPH07268640 A JP H07268640A JP 8379794 A JP8379794 A JP 8379794A JP 8379794 A JP8379794 A JP 8379794A JP H07268640 A JPH07268640 A JP H07268640A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- gold plating
- gold
- film
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Wire Bonding (AREA)
Abstract
(57)【要約】
【目的】 置換型の無電解金めっき液を使用して密着性
の良好な厚付け金めっき皮膜を形成する方法の確立。
【構成】 素材上にNi−Pめっき下地を形成し、該N
i−Pめっき下地上に置換型金めっき液を用いて金めっ
き皮膜を形成する無電解金めっき方法において、Ni−
Pめっき下地を2層以上のNi−Pめっき層としそして
Ni−Pめっき層間にNiより貴な金属(例:Au、A
g、Pt、Ru、Pd及びRh)のバリアー層を形成す
ること特徴とする。図1に示すように、Ni−Pめっき
皮膜中にNiより貴な金属のバリアー層を設けて、腐食
が起こってもそこで止め、腐食がストレートに素材に到
達するのを抑える。密着性の良い0.3μm以上の厚い
Auめっき皮膜が得られる。
(57) [Summary] [Purpose] The establishment of a method for forming a thick gold plating film with good adhesion using a substitution type electroless gold plating solution. [Structure] A Ni-P plating base is formed on the material, and the N
In an electroless gold plating method for forming a gold plating film on an i-P plating base using a substitutional gold plating solution, Ni-
The P plating base is made into two or more Ni-P plating layers, and a metal nobler than Ni (for example, Au, A
g, Pt, Ru, Pd and Rh) is formed as a barrier layer. As shown in FIG. 1, a barrier layer made of a metal nobler than Ni is provided in the Ni-P plating film, and even if corrosion occurs, it is stopped there to prevent the corrosion from reaching the material straight. A thick Au plating film with a good adhesion of 0.3 μm or more can be obtained.
Description
【0001】[0001]
【産業上の利用分野】本発明は、置換による無電解金め
っき方法に関するものであり、特には例えば現在急速に
発展しつつある各種半導体デバイス向けに軽量化、小型
化、高信頼性化を指向しているプリント回路におけるワ
イヤボンディング等を目的としてプリント基板上に密着
性の良い0.3〜0.5μmの厚付け金めっき皮膜を形
成することのできる無電解金めっき方法に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of electroless gold plating by substitution, and is directed to weight reduction, downsizing and high reliability particularly for various semiconductor devices which are currently rapidly developing. The present invention relates to an electroless gold plating method capable of forming a thick gold plating film having a good adhesiveness of 0.3 to 0.5 μm on a printed circuit board for the purpose of wire bonding in a printed circuit.
【0002】[0002]
【従来の技術】銅張りプリント基板、リードフレーム、
TAB、半導体デバイス等のワイヤボンディング、金電
極形成等に代表されるように、電子デバイスにおいては
金めっきが必要とされることが非常に多い。例えば、プ
リント基板におけるワイヤーボンディングを目的とする
金めっき皮膜の形成においては、必要とされるめっき皮
膜厚0.3μm以上を得ることのできる無電解金めっき
液がこれまでなかったため、電気めっきで対応してい
た。2. Description of the Related Art Copper-clad printed circuit boards, lead frames,
As typified by TAB, wire bonding of semiconductor devices and the like, gold electrode formation, etc., gold plating is very often required in electronic devices. For example, in the formation of a gold plating film for the purpose of wire bonding on a printed circuit board, there is no electroless gold plating solution that can obtain the required plating film thickness of 0.3 μm or more. Was.
【0003】しかし、パターンが微細化すると電気めっ
きではもはや対応できず、無電解めっき液が要望される
ようになった。また、プリント基板のCOB用として電
気めっきで金めっき皮膜を得、ワイヤーボンディングに
供しているが、回路の引き廻しの関係から、無電解金め
っきが望まれている。この他、従来からの電気金めっき
では、ボンディングパッドや本来の回路配線の他にリー
ドが必要であるのに対して、無電解金めっきではこれら
が不要となる等の多くのメリットがある。こうした点か
ら優れた無電解金めっき技術を確立することが急務とな
っている。However, as the pattern becomes finer, electroplating cannot be dealt with anymore, and an electroless plating solution has been demanded. In addition, although a gold plating film is obtained by electroplating for COB of a printed circuit board and is used for wire bonding, electroless gold plating is desired in view of circuit layout. In addition, conventional electro gold plating requires leads in addition to bonding pads and original circuit wiring, whereas electroless gold plating has many advantages such as the fact that these are unnecessary. From these points, there is an urgent need to establish excellent electroless gold plating technology.
【0004】無電解金めっきには還元型と置換型があ
る。還元型金めっき液は還元剤をめっき液中に含ませる
ものであり、他方置換型金めっき液はイオン化傾向の差
を利用するものである。これまで厚めっき(0.3〜
0.5μm)に対しては還元型金めっきが行なわれて来
た。しかし、アルカリ性の浴であるため、レジスト皮膜
や基板に悪影響を与えるため中性浴が求められている。The electroless gold plating has a reduction type and a substitution type. The reduction type gold plating solution contains a reducing agent in the plating solution, while the substitution type gold plating solution utilizes the difference in ionization tendency. Until now, thick plating (0.3 ~
0.5 μm) has been subjected to reduction gold plating. However, since it is an alkaline bath, it adversely affects the resist film and the substrate, so a neutral bath is required.
【0005】こうした中で、本件出願人を含め当業界に
おいては、中性浴として置換型金めっき液を開発してき
た。例えば、特開平4−314870号、特開平5−2
87541号、特開平5−295558号等を参照され
たい。置換型金めっきは、被めっき物を溶解し、金が電
子を受けて析出するものであるため、下地及び素材の腐
食を必然的に伴う。プリント基板は、銅材にNi−Pめ
っき下地を形成した後金めっき皮膜を形成するのが一般
である。置換型金めっきは、Ni−P下地を腐食して成
立するため下地のみでなく、腐食が進むと素材の侵食も
行なわれる。これが外観不良や密着性不良が起こり又液
の汚染さらに金皮膜の汚染が起こる等の悪影響の原因と
なる。すなわち、置換型のめっきであるため、下地の溶
解をしながら析出させる事から、Ni−P及び素材の銅
の侵食が生じ得る。Ni−P下地は柱状晶の結晶析出で
あるためP%の低い部分の侵食が早く、縦方向に銅に到
達する腐食が進む。このことからNi−P皮膜の下の銅
表面が腐食され、Ni−Pとの密着性を悪化するのであ
る。Under these circumstances, the substitution gold plating solution has been developed as a neutral bath in the industry including the applicant. For example, JP-A-4-314870 and JP-A-5-22
See 87541, JP-A-5-295558 and the like. The substitutional gold plating involves melting an object to be plated, and gold is deposited by receiving electrons, so that the underlying material and the material are necessarily corroded. A printed circuit board is generally formed by forming a Ni—P plating base on a copper material and then forming a gold plating film. Since substitutional gold plating is established by corroding the Ni-P base, not only the base but also the material is corroded as the corrosion progresses. This causes adverse effects such as poor appearance and poor adhesion, contamination of the liquid, and contamination of the gold film. That is, since it is substitutional type plating, since it is deposited while melting the underlayer, corrosion of Ni-P and copper of the material can occur. Since the Ni—P base is columnar crystal precipitation, the portion with a low P% erodes quickly, and the corrosion reaching the copper in the vertical direction progresses. From this, the copper surface under the Ni-P film is corroded, and the adhesion with Ni-P is deteriorated.
【0006】そこで、置換めっきを薄付けにとどめ、侵
食を少なくした上で、還元型めっき液を用いて厚付け金
めっきを行い、必要とする金皮膜厚0.3μ〜0.5μ
mを得る手法が一般に採用されている。他方、置換のみ
で厚付けを得るために、Ni−P皮膜中のP%を変化さ
せた低P含有Ni層/高P含有Ni層という2層めっき
が提案されている。Ni−P皮膜はP%が低い程、Ni
の溶出が進み易く、金が置換し易いのであるが、P%を
高くすると溶解が抑制されることに着目したものであ
る。例えば、サーキットテクノロジーVol.8 N
o.6(1993)477〜478頁に報告されてい
る。しかし、Ni−P皮膜のP%を安定化することや、
2種類の浴の管理面から現実的でない。Therefore, the displacement plating is limited to a thin thickness to reduce erosion, and then a thick gold plating is performed using a reduction type plating solution to obtain a required gold film thickness of 0.3 μ to 0.5 μ.
The method of obtaining m is generally adopted. On the other hand, in order to obtain thickening only by substitution, two-layer plating of a low P-containing Ni layer / high P-containing Ni layer in which P% in the Ni-P coating is changed has been proposed. The lower the P% of the Ni-P coating, the more Ni
It is because the elution of gold is easy to proceed and the gold is easily replaced, but it is focused on that the dissolution is suppressed when the P% is increased. For example, Circuit Technology Vol. 8 N
o. 6 (1993) pp. 477-478. However, stabilizing the P% of the Ni-P coating,
It is not realistic from the management aspect of the two types of baths.
【0007】[0007]
【発明が解決しようとする課題】本発明の課題は、通常
的に使用されるNi−Pめっき液を使用して、上述した
問題点のない置換型の無電解金めっき液を使用して密着
性の良好な厚付け金めっき皮膜を形成する方法を確立す
ることである。SUMMARY OF THE INVENTION An object of the present invention is to use a Ni-P plating solution which is usually used, and a substitution type electroless gold plating solution which does not have the above-mentioned problems. It is to establish a method for forming a thick gold plating film having good properties.
【0008】[0008]
【課題を解決するための手段】本発明者は、同一のNi
−Pめっき皮膜を同一浴から得ることの中で、Ni−P
下地の耐食性を高める方法として、中間にNi−Pより
貴な金属めっき層をバリアー層として介在させることを
想到し、試行の結果、好成績を得た。この知見に基づい
て、本発明は、素材上にNi−Pめっき下地を形成し、
該Ni−Pめっき下地上に置換型金めっき液を用いて金
めっき皮膜を形成する無電解金めっき方法において、N
i−Pめっき下地を2層以上のNi−Pめっき下地層と
しそして該Ni−Pめっき下地層間にNiより貴な金属
のバリアー層を形成することを特徴とする無電解金めっ
き方法を提供する。本方法は、好適には、銅素材上に第
1Ni−Pめっき下地層を形成し、貴金属液に浸漬して
該第1Ni−Pめっき下地層上にNiより貴な金属のバ
リアー層を形成し、該バリアー層上に第2Ni−Pめっ
き下地層を形成し、その後該第2Ni−Pめっき下地層
上に置換型金めっき液を用いて金めっき皮膜を形成する
ことにより具現することができる。Niより貴な金属は
Au、Ag、Pt、Ru、Pd及びRhから成る群から
選択することが好ましい。金めっき皮膜は0.3〜0.
5μmの厚付けめっきであり、そして優れた密着性を有
している。The present inventor has found that the same Ni
-P plating film from the same bath, Ni-P
As a method of enhancing the corrosion resistance of the underlayer, it was conceived to interpose a metal plating layer, which is more precious than Ni-P, as a barrier layer, and as a result of the trial, good results were obtained. Based on this finding, the present invention forms a Ni-P plating base on a material,
In the electroless gold plating method of forming a gold plating film on the Ni-P plating base using a substitutional gold plating solution,
Provided is an electroless gold plating method characterized in that an i-P plating underlayer is made up of two or more Ni-P plating underlayers, and a barrier layer of a metal nobler than Ni is formed between the Ni-P plating underlayers. . This method preferably forms a first Ni-P plated underlayer on a copper material and immerses it in a noble metal solution to form a barrier layer of a metal nobler than Ni on the first Ni-P plated underlayer. It can be embodied by forming a second Ni-P plating underlayer on the barrier layer, and then forming a gold plating film on the second Ni-P plating underlayer using a substitutional gold plating solution. The metal nobler than Ni is preferably selected from the group consisting of Au, Ag, Pt, Ru, Pd and Rh. The gold plating film has a thickness of 0.3-0.
It has a thickness of 5 μm and has excellent adhesion.
【0009】[0009]
【作用】Ni−P皮膜はP%が低い程、Niの溶出が進
み易い、すなわち金が置換し易い。P%が均一で層状析
出であれば好ましいのであるが、柱状晶でP%が不均一
であると、P%の低い所から溶出が起こるため、局部的
に素材の銅に達する溶解が進行してしまうこととなる。
他方、P%を高くすると、溶解が抑制されるが、金置換
析出が減少し、厚付け金めっき皮膜が得られない。Pが
一般に6〜8%の皮膜となる中PタイプのNi−P浴が
多く用いられており、金めっき厚が高くなるほど腐食起
こすこととなる。その対応として、Ni−Pめっき皮膜
の中にNiより貴な金属のバリアー層を設けて、腐食が
起こってもバリアー層で止め、腐食がストレートに素材
に到達するのを抑える。The lower the P% of the Ni-P coating, the easier the elution of Ni, that is, the easier the gold is replaced. It is preferable that the P% is uniform and layered, but if the P% is non-uniform in the columnar crystals, elution occurs from a place where the P% is low, so that the dissolution locally reaches the material copper and progresses. Will be lost.
On the other hand, if the P% is increased, the dissolution is suppressed, but the gold displacement precipitation is reduced, and the thick gold plating film cannot be obtained. A medium P type Ni-P bath, which generally forms a 6 to 8% P film, is often used, and corrosion will occur as the gold plating thickness increases. As a countermeasure, a barrier layer made of a metal nobler than Ni is provided in the Ni-P plating film, and even if corrosion occurs, it is stopped by the barrier layer to prevent the corrosion from reaching the material straight.
【0010】[0010]
【実施例】本発明が対象とする素材としては、銅張りプ
リント基板、リードフレーム、TAB、半導体デバイ
ス、透明導電膜回路、硝子、セラミック等を例示するこ
とができ、ワイヤボンディングのための金皮膜形成、金
電極形成等を必要としそして電位が金より卑なもの全般
を包括する。[Examples] Examples of materials targeted by the present invention include copper-clad printed boards, lead frames, TABs, semiconductor devices, transparent conductive film circuits, glass, and ceramics. Gold films for wire bonding. Formation, gold electrode formation, etc. are required, and the electric potential includes all things that are baser than gold.
【0011】Ni−Pめっきとしては、市販の通常的な
Ni−Pめっき液のいずれでも使用することができる。
形成されるNi−Pメッキ膜中のP含有量が8〜12%
となる高Pめっき液、P含有量が3〜7%となる低Pめ
っき液、P含有量が6〜8%となる中Pめっき液いずれ
も使用可能である。特に対半田性の良好な中Pめっき液
の使用が推奨される。例えば、日鉱メタルプレーティン
グ(株)製ニコム−Nは、5g/lNiを含むpH4.
5の中性のNi−Pめっき液である。めっき時間5〜2
0分で1〜5μmの膜厚を形成することができる。Ni
−Pめっきに先立って銅素材を脱脂及び酸洗したのちP
d等の貴金属触媒付与処理を行うことが好ましい。As the Ni-P plating, any of commercially available ordinary Ni-P plating solutions can be used.
P content in the formed Ni-P plating film is 8 to 12%
It is possible to use any of a high P plating solution having a P content of 3 to 7%, a low P plating solution having a P content of 3 to 7%, and a medium P plating solution having a P content of 6 to 8%. In particular, it is recommended to use a medium P plating solution having good solderability. For example, Nicom-N manufactured by Nikko Metal Plating Co., Ltd. has a pH of 4.
5 is a neutral Ni-P plating solution. Plating time 5-2
A film thickness of 1 to 5 μm can be formed in 0 minutes. Ni
-P after degreasing and pickling the copper material prior to P plating
It is preferable to carry out a treatment for applying a noble metal catalyst such as d.
【0012】バリアー層金属としては、Ni−Pより貴
なものであれば良く、上下のNi−P層との密着を害さ
ないように、例えば0.01〜5μmの範囲の極めて薄
い層とすれば良い。Au、Ag、Pt、Ru、Pd、R
h等を使用することができる。幾つかのめっき浴の例及
びその使用条件例を挙げておく: (1)Ptめっき液 塩化第2白金酸:0.2〜0.8g/l(Pt量) pH:1〜3 液温:室温 処理時間:10〜50秒 (2)Ruめっき液 硫酸ルテニウム:2〜10g/l(Ru量) pH:1〜3 液温:室温 処理時間:2〜10秒 (3)Pdめっき液: 塩化パラジウム:0.2〜1.0g/l(Pd量) pH:0.5〜3 液温:20〜50℃ 処理時間:10秒〜3分 (4)Rhめっき液: 硫酸ロジウム:0.1〜0.6g/l(Rh量) pH:1〜2.5 液温:40℃ 処理時間:2〜15秒 (5)Auめっき液: シアン化金カリウム:0.1〜0.6g/l(Au量) pH:4〜5 液温:室温 処理時間:5〜30秒The barrier layer metal may be any metal that is more noble than Ni-P, and may be an extremely thin layer having a thickness of, for example, 0.01 to 5 μm so as not to impair the adhesion with the upper and lower Ni-P layers. Good. Au, Ag, Pt, Ru, Pd, R
h or the like can be used. Some examples of plating baths and their use conditions are given below: (1) Pt plating solution Chloroplatinic acid chloride: 0.2 to 0.8 g / l (Pt amount) pH: 1 to 3 Solution temperature: Room temperature Treatment time: 10 to 50 seconds (2) Ru plating solution Ruthenium sulfate: 2 to 10 g / l (Ru amount) pH: 1 to 3 Liquid temperature: room temperature Treatment time: 2 to 10 seconds (3) Pd plating solution: Chloride Palladium: 0.2 to 1.0 g / l (Pd amount) pH: 0.5 to 3 Liquid temperature: 20 to 50 ° C. Treatment time: 10 seconds to 3 minutes (4) Rh plating solution: Rhodium sulfate: 0.1 ~ 0.6 g / l (Rh amount) pH: 1 to 2.5 Solution temperature: 40 ° C Treatment time: 2 to 15 seconds (5) Au plating solution: Potassium gold cyanide: 0.1 to 0.6 g / l (Au amount) pH: 4 to 5 Liquid temperature: room temperature Treatment time: 5 to 30 seconds
【0013】置換による無電解金めっき液としては、最
初に文献を挙げたように、これまで様々のものが知られ
ている。例えば、可溶性金塩にシアン化アルカリ安定化
剤等を添加した置換金めっき液が知られている。本発明
はそのいずれをも使用することができるが、特に好まし
い置換形金めっき液の例はKG−550の商品名で市販
されているものである。これは次の組成及び使用条件を
有する: (A)組成 KAu(CN)2 :0.5〜5g/l 錯化剤:10〜50g/l pH緩衝剤:10〜150g/l 添加剤:1〜20ml/l (B)使用条件 pH:6 温度:60℃ めっき厚:0.5μm/30分As the electroless gold plating solution by substitution, various kinds are known so far, as mentioned in the first document. For example, a displacement gold plating solution in which an alkali cyanide stabilizer or the like is added to a soluble gold salt is known. In the present invention, any of them can be used, but a particularly preferable example of the displacement type gold plating solution is that marketed under the trade name of KG-550. It has the following composition and conditions of use: (A) Composition KAu (CN) 2 : 0.5-5 g / l Complexing agent: 10-50 g / l pH buffer: 10-150 g / l Additive: 1 ~ 20 ml / l (B) Usage conditions pH: 6 Temperature: 60 ° C Plating thickness: 0.5 μm / 30 minutes
【0014】本発明に従えば、優れた密着性を有する
0.3〜0.5μmの厚付け金めっきが可能である。置
換金めっきに先立ってNi−P下地を貴金属液に浸漬し
て活性化処理を行うことが好ましい。According to the present invention, 0.3 to 0.5 μm thick gold plating having excellent adhesion can be performed. Prior to the displacement gold plating, it is preferable to immerse the Ni-P undercoat in a precious metal solution to perform activation treatment.
【0015】以下に、実施例及び比較例を示す。密着性
試験として、ピーリングテストは事務用のセロテープ
(日東電工製)を金めっきしたプリント基板表面に張
り、布ロールでこすりつけた後、指先でテープの端を持
ち、一挙にテープを引き剥すことにより行った。Auめ
っき皮膜または下地Ni−Pが密着不良の場合、テープ
にめっき皮膜が付着する。また、一部のサンプルについ
ては、走査電子顕微鏡でめっき状況を詳しく観察した。Examples and comparative examples are shown below. As an adhesion test, the peeling test is to stick a cellophane tape (made by Nitto Denko) for office work on the surface of a gold-plated printed circuit board, rub it with a cloth roll, hold the end of the tape with your fingertips, and peel off the tape all at once. went. When the Au plating film or the underlying Ni-P has poor adhesion, the plating film adheres to the tape. Further, with respect to some of the samples, the plating state was observed in detail with a scanning electron microscope.
【0016】(実施例1)Cu素材上に次の手順でめっ
き処理を行った。 (A)第1回Ni−Pめっき Ni:5g/l pH:4.5 液温:85℃ めっき時間:5分 膜厚:1μm (B)水洗 (C)Ptめっき液浸漬 塩化白金酸めっき液(Pt:0.5g/l) pH:2 液温:室温 時間:30秒 (D)水洗 (E)第2回Ni−Pめっき 第1回Ni−Pめっき液と同じものを使用。 めっき時間:15分 膜厚:4μm (F)水洗 (G)活性化処理 硫酸ルテニウム:5g/l(Ru量) pH:1.0 液温:室温 浸漬時間:5秒 (H)水洗 (I)置換Auめっき Au:2g/l pH:6 液温:60℃ 時間:30分 膜厚:0.52μm (J)水洗 (K)乾燥 こうして0.52μmの厚い金めっき皮膜が得られた。
ピーリング密着試験の結果は良好であり、断面観察の結
果銅素材に達する侵食はなかった。Example 1 A Cu material was plated by the following procedure. (A) 1st Ni-P plating Ni: 5 g / l pH: 4.5 Liquid temperature: 85 ° C. Plating time: 5 minutes Film thickness: 1 μm (B) Rinse with water (C) Pt plating solution immersion Chloroplatinic acid plating solution (Pt: 0.5 g / l) pH: 2 Solution temperature: room temperature Time: 30 seconds (D) Washing with water (E) Second Ni-P plating The same as the first Ni-P plating solution is used. Plating time: 15 minutes Film thickness: 4 μm (F) Washing with water (G) Activation treatment Ruthenium sulfate: 5 g / l (Ru amount) pH: 1.0 Liquid temperature: room temperature Immersion time: 5 seconds (H) Washing with water (I) Substitution Au plating Au: 2 g / l pH: 6 Liquid temperature: 60 ° C. Time: 30 minutes Film thickness: 0.52 μm (J) Washing with water (K) Drying A thick gold plating film of 0.52 μm was thus obtained.
The result of the peeling adhesion test was good, and the cross-section observation showed no erosion reaching the copper material.
【0017】(比較例1)バリアー層を設けず、単一層
のNi−Pめっきを使用し(実施例1と同一のNi−P
めっき液を使用して第1回及び第2回のNi−Pめっき
合計厚さと同じ厚さを形成した)、その上に0.55μ
m厚付けの金めっきを施した。手順は次の通りとした。 (A)Ni−Pめっき Ni:5g/l pH:4.5 液温:85℃ めっき時間:20分 膜厚:5μm (B)水洗 (C)活性化処理 硫酸ルテニウム:5g/l(Ru量) pH:1.0 液温:室温 浸漬時間:5秒 (D)水洗 (E)置換Auめっき Au:2g/l pH:6 液温:60℃ 時間:30分 膜厚:0.55μm (F)水洗 (G)乾燥(Comparative Example 1) A single layer of Ni-P plating was used without providing a barrier layer (the same Ni-P as in Example 1).
The plating solution was used to form the same thickness as the total thickness of the first and second Ni-P plating), on which 0.55μ
m thick gold plating was applied. The procedure was as follows. (A) Ni-P plating Ni: 5 g / l pH: 4.5 Liquid temperature: 85 ° C. Plating time: 20 minutes Film thickness: 5 μm (B) Washing with water (C) Activation treatment Ruthenium sulfate: 5 g / l (Ru amount ) PH: 1.0 Liquid temperature: room temperature Immersion time: 5 seconds (D) Washing with water (E) Substitution Au plating Au: 2 g / l pH: 6 Liquid temperature: 60 ° C. Time: 30 minutes Film thickness: 0.55 μm (F ) Washing with water (G) Drying
【0018】こうして0.55μmの厚い金めっき皮膜
が得られた。ピーリング密着試験の結果は不良であり、
断面観察の結果銅素材に達する侵食が認められた。図2
はピーリング密着試験後に密着不良を起こした部分の走
査電子顕微鏡写真を示す。Au層が剥離して、その下の
Ni−P層が露出し更にその下側のCu素材(黒い部
分)が露出しているのが観察される。図3は、Ni−P
及びCu素材の侵食状況を示す。Ni−P層は柱状に縦
に侵食部が走っており、Cu素材まで侵食が拡がってい
る。Thus, a thick gold plating film of 0.55 μm was obtained. The result of the peeling adhesion test is poor,
As a result of cross-sectional observation, erosion reaching the copper material was recognized. Figure 2
Shows a scanning electron micrograph of a portion where adhesion failure occurred after the peeling adhesion test. It is observed that the Au layer is peeled off, the underlying Ni-P layer is exposed, and further the Cu material (black portion) underneath is exposed. Fig. 3 shows Ni-P
And shows the erosion status of Cu material. The Ni-P layer has columnar erosion portions running vertically, and the erosion extends to the Cu material.
【0019】(実施例2)実施例1で示した第1回及び
第2回Ni−Pめっきの間の貴金属浸漬めっきを次のめ
っき液及び条件で行った。他の条件は同じとした。 (C)Pdめっき液浸漬 塩化パラジウムめっき液(Pd:0.6g/l) pH:2 液温:室温 時間:2分 こうして0.5μmの厚い金めっき皮膜が得られた。ピ
ーリング密着試験の結果は良好であり、断面観察の結果
銅素材に達する侵食はなかった。めっき後の素材の断面
写真を図1に示す。Cu素材に達する侵食はなく、Ni
−P第2層の柱状の腐食はPdバリアー層で止まり、そ
の下に及んでいない。(Example 2) The noble metal immersion plating between the first and second Ni-P plating shown in Example 1 was performed under the following plating solution and conditions. The other conditions were the same. (C) Immersion in Pd plating solution Palladium chloride plating solution (Pd: 0.6 g / l) pH: 2 Solution temperature: room temperature Time: 2 minutes Thus, a thick gold plating film of 0.5 μm was obtained. The result of the peeling adhesion test was good, and the cross-section observation showed no erosion reaching the copper material. A cross-sectional photograph of the material after plating is shown in FIG. There is no erosion reaching the Cu material, Ni
The columnar corrosion of the -P second layer stops at the Pd barrier layer and does not extend therebelow.
【0020】(実施例3)実施例1で示した第1回及び
第2回Ni−Pめっきの間の貴金属浸漬めっきを次のめ
っき液及び条件で行った。他の条件は同じとした。 (C)Auめっき液浸漬 シアン化金カリウムめっき液(Au:0.5g/l) pH:4.5 液温:室温 時間:15秒 こうして0.48μmの厚い金めっき皮膜が得られた。
ピーリング密着試験の結果は良好であり、断面観察の結
果銅素材に達する侵食はなかった。(Example 3) The noble metal immersion plating between the first and second Ni-P plating shown in Example 1 was performed under the following plating solution and conditions. The other conditions were the same. (C) Immersion in Au plating solution Potassium cyanide plating solution (Au: 0.5 g / l) pH: 4.5 Solution temperature: room temperature Time: 15 seconds Thus, a thick gold plating film of 0.48 μm was obtained.
The result of the peeling adhesion test was good, and the cross-section observation showed no erosion reaching the copper material.
【0021】(実施例4)実施例1で示した第1回及び
第2回Ni−Pめっきの間の貴金属浸漬めっきを次のめ
っき液及び条件で行った。他の条件は同じとした。 (C)Rhめっき液浸漬 硫酸ロジウムめっき液(Rh:0.3g/l) pH:1.5 液温:40℃ 時間:8秒 こうして0.44μmの厚い金めっき皮膜が得られた。
ピーリング密着試験の結果は良好であり、断面観察の結
果銅素材に達する侵食はなかった。(Example 4) The noble metal immersion plating between the first and second Ni-P plating shown in Example 1 was performed under the following plating solution and conditions. The other conditions were the same. (C) Immersion in Rh plating solution Rhodium sulfate plating solution (Rh: 0.3 g / l) pH: 1.5 Solution temperature: 40 ° C. Time: 8 seconds Thus, a thick gold plating film of 0.44 μm was obtained.
The result of the peeling adhesion test was good, and the cross-section observation showed no erosion reaching the copper material.
【0022】[0022]
【発明の効果】Ni−P下地めっき中にバリアー層を介
在させることにより金めっき中に素材に到達するような
侵食が抑制されることから、密着性の良い厚いAuめっ
き皮膜が得られる。ワイヤーボンディングを行うプリン
ト基板に於いて、0.3μm以上の厚い金めっき皮膜を
得ることができるため、微細化するパターンへのめっき
が可能となり、軽量化、小型化、高信頼性化を指向して
いるプリント回路等の製造に大きく寄与する。EFFECTS OF THE INVENTION By interposing a barrier layer during Ni-P undercoating, erosion that reaches the material during gold plating is suppressed, so that a thick Au plating film with good adhesion can be obtained. On printed circuit boards for wire bonding, a thick gold plating film of 0.3 μm or more can be obtained, which enables plating on finer patterns, aiming at weight reduction, downsizing, and high reliability. This greatly contributes to the manufacture of printed circuits and the like.
【図1】めっき後の素材の断面金属組織の電子顕微鏡写
真であり、Cu素材に達する侵食はなく、Ni−Pの腐
食はPdバリアー層で止まっていることを示す。FIG. 1 is an electron micrograph of the cross-sectional metallographic structure of the material after plating, showing that there is no erosion reaching the Cu material and the corrosion of Ni—P is stopped at the Pd barrier layer.
【図2】ピーリング密着試験後に密着不良を起こした部
分の金属組織の走査電子顕微鏡写真を示す。FIG. 2 shows a scanning electron micrograph of a metal structure of a portion where adhesion failure occurs after a peeling adhesion test.
【図3】Ni−P及びCu素材の侵食状況を示す断面の
金属組織の電子顕微鏡写真であり、Ni−P層には柱状
に縦に侵食部が走っており、Cu素材まで侵食が拡がっ
ている状況を示す。FIG. 3 is an electron micrograph of a metal structure of a cross section showing the erosion state of Ni-P and Cu materials, in which the erosion portion runs vertically in a columnar shape in the Ni-P layer, and the erosion extends to the Cu material. Indicates the situation.
Claims (4)
該Ni−Pめっき下地上に置換型金めっき液を用いて金
めっき皮膜を形成する無電解金めっき方法において、N
i−Pめっき下地を2層以上のNi−Pめっき下地層と
しそして該Ni−Pめっき下地層間にNiより貴な金属
のバリアー層を形成することを特徴とする無電解金めっ
き方法。1. A Ni-P plating base is formed on a material,
In the electroless gold plating method of forming a gold plating film on the Ni-P plating base using a substitutional gold plating solution,
A method of electroless gold plating, which comprises forming the i-P plating base layer into two or more Ni-P plating base layers and forming a barrier layer of a metal nobler than Ni between the Ni-P plating base layers.
形成し、該第1Ni−Pめっき下地層上にNiより貴な
金属のバリアー層を形成し、該バリアー層上に第2Ni
−Pめっき下地層を形成し、その後該第2Ni−Pめっ
き下地層上に置換型金めっき液を用いて金めっき皮膜を
形成することを特徴とする無電解金めっき方法。2. A first Ni—P plating underlayer is formed on a copper material, a barrier layer of a metal nobler than Ni is formed on the first Ni—P plating underlayer, and a second Ni layer is formed on the barrier layer.
A non-electrolytic gold plating method, which comprises forming a -P plating underlayer, and then forming a gold plating film on the second Ni-P plating underlayer using a substitutional gold plating solution.
Ru、Pd及びRhから成る群から選択されることを特
徴とする請求項1乃至2の無電解金めっき方法。3. A metal that is more precious than Ni is Au, Ag, Pt,
3. The electroless gold plating method according to claim 1, wherein the electroless gold plating method is selected from the group consisting of Ru, Pd and Rh.
付けめっきであり、そして優れた密着性を有しているこ
とを特徴とする請求項1乃至3の無電解金めっき方法。4. The electroless gold plating method according to claim 1, wherein the gold plating film is a thick plating having a thickness of 0.3 to 0.5 μm, and has excellent adhesion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6083797A JP2785102B2 (en) | 1994-03-31 | 1994-03-31 | Electroless gold plating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6083797A JP2785102B2 (en) | 1994-03-31 | 1994-03-31 | Electroless gold plating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07268640A true JPH07268640A (en) | 1995-10-17 |
| JP2785102B2 JP2785102B2 (en) | 1998-08-13 |
Family
ID=13812652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6083797A Expired - Fee Related JP2785102B2 (en) | 1994-03-31 | 1994-03-31 | Electroless gold plating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2785102B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116256A (en) * | 1995-10-20 | 1997-05-02 | Nec Corp | Printed wiring board and its manufacture |
| JPH11330652A (en) * | 1997-06-10 | 1999-11-30 | Canon Inc | Substrate and method of manufacturing the same |
| EP0884934A3 (en) * | 1997-06-10 | 2000-03-15 | Canon Kabushiki Kaisha | Substrate and method for producing it |
| WO2006112215A1 (en) * | 2005-04-01 | 2006-10-26 | Nippon Mining & Metals Co., Ltd. | Plated base material |
| JP2010205991A (en) * | 2009-03-04 | 2010-09-16 | Mitsubishi Electric Corp | Semiconductor device and method for manufacturing the same |
| US7898814B2 (en) * | 2007-03-15 | 2011-03-01 | Samsung Sdi Co., Ltd. | Protection circuit board for secondary battery and secondary battery using the same |
| JP2011074484A (en) * | 2009-09-02 | 2011-04-14 | Tdk Corp | Plating film, printed wiring board, and module substrate |
| DE102017007572A1 (en) | 2016-08-30 | 2018-03-01 | Shimano Inc. | Outdoor component |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916961A (en) * | 1982-07-21 | 1984-01-28 | Hitachi Ltd | Formation of plating film |
-
1994
- 1994-03-31 JP JP6083797A patent/JP2785102B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5916961A (en) * | 1982-07-21 | 1984-01-28 | Hitachi Ltd | Formation of plating film |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09116256A (en) * | 1995-10-20 | 1997-05-02 | Nec Corp | Printed wiring board and its manufacture |
| JPH11330652A (en) * | 1997-06-10 | 1999-11-30 | Canon Inc | Substrate and method of manufacturing the same |
| EP0884934A3 (en) * | 1997-06-10 | 2000-03-15 | Canon Kabushiki Kaisha | Substrate and method for producing it |
| WO2006112215A1 (en) * | 2005-04-01 | 2006-10-26 | Nippon Mining & Metals Co., Ltd. | Plated base material |
| CN101151399B (en) | 2005-04-01 | 2010-12-29 | 日矿金属株式会社 | Plating base material |
| JP4926053B2 (en) * | 2005-04-01 | 2012-05-09 | Jx日鉱日石金属株式会社 | Plating substrate |
| US7898814B2 (en) * | 2007-03-15 | 2011-03-01 | Samsung Sdi Co., Ltd. | Protection circuit board for secondary battery and secondary battery using the same |
| US20110111265A1 (en) * | 2007-03-15 | 2011-05-12 | Samsung Sdi Co.,Ltd. | Protection circuit board for secondary battery and secondary battery using the same |
| US8492013B2 (en) | 2007-03-15 | 2013-07-23 | Samsung Sdi Co., Ltd. | Protection circuit board for secondary battery and secondary battery using the same |
| JP2010205991A (en) * | 2009-03-04 | 2010-09-16 | Mitsubishi Electric Corp | Semiconductor device and method for manufacturing the same |
| JP2011074484A (en) * | 2009-09-02 | 2011-04-14 | Tdk Corp | Plating film, printed wiring board, and module substrate |
| DE102017007572A1 (en) | 2016-08-30 | 2018-03-01 | Shimano Inc. | Outdoor component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2785102B2 (en) | 1998-08-13 |
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