JPH0728092B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH0728092B2 JPH0728092B2 JP62038251A JP3825187A JPH0728092B2 JP H0728092 B2 JPH0728092 B2 JP H0728092B2 JP 62038251 A JP62038251 A JP 62038251A JP 3825187 A JP3825187 A JP 3825187A JP H0728092 B2 JPH0728092 B2 JP H0728092B2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- waveguide
- light
- semiconductor laser
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 17
- 230000003287 optical effect Effects 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/14—Heads, e.g. forming of the optical beam spot or modulation of the optical beam specially adapted to record on, or to reproduce from, more than one track simultaneously
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は光学デイスク読取装置の光源として最適な半導
体レーザ装置に関する。The present invention relates to a semiconductor laser device most suitable as a light source for an optical disk reader.
（ロ）従来の技術 現在、光学デイスクの読取用の装置としては、消去用、
読取用、書込用の各ビームを個々に出力できるように３
つの独立した共振器を約100μｍの間隔で並列させてな
る３ビーム型の半導体レーザ装置が提案されている（実
願昭61-40952号）。(B) Conventional technology Currently, as a device for reading an optical disc, an erasing device,
To be able to output each beam for reading and writing 3
A three-beam type semiconductor laser device in which three independent resonators are arranged in parallel at intervals of about 100 μm has been proposed (Japanese Utility Model Application No. 61-40952).
（ハ）発明が解決しようとする問題点 このように近接した共振器から出射されるレーザ光を夫
々独立にモニタにするためには特開昭58-102590号公報
に開示されている如く共振器近傍に共振器個々に対応し
てモニタ用の受光素子を配する方法が考えられる。(C) Problems to be Solved by the Invention In order to independently monitor the laser beams emitted from the resonators close to each other in this way, the resonator is disclosed in Japanese Patent Laid-Open No. 58-102590. A method is conceivable in which a light-receiving element for monitoring is arranged near each resonator.
然るに、半導体レーザチツプ（共振器）から出力される
レーザ光のビーム拡がりθ は少なくとも10°程度ある
ため、上記チツプと受光素子との間隔は500μｍ以下と
しない限り正確にモニタすることはできない。Therefore, it is output from the semiconductor laser chip (resonator).
Beam divergence of laser light θ Is at least about 10 °
Therefore, the distance between the chip and the light receiving element should be 500 μm or less.
It cannot be monitored accurately without it.
即ち、第３図に示す如く、100μｍ間隔（具体的には各
チツプから出力されるレーザ光の光軸（４）間距離）で
並列された半導レーザチツプ（１）〜（３）の各々の出
射面に対向して複数の受光素子（５）〜（７）が配さ
れ、更に上記各チツプから出力されるレーザ光（1a）〜
（3a）の各広がり角が10°でかつ各チツプ（１）〜
（３）と受光素子（５）〜（７）との距離が500μｍ以
上である際、受光素子側において各レーザ光が重畳する
こととなる。従つて各受光素子（５）〜（７）は夫々対
向するレーザチツプ以外のチツプから出力されるレーザ
光をも受光することとなり、個々のレーザチツプ毎のモ
ニタが不可能となる。That is, as shown in FIG. 3, each of the semiconductor laser chips (1) to (3) arranged in parallel at 100 μm intervals (specifically, the distance between the optical axes (4) of the laser beams output from the respective chips). A plurality of light receiving elements (5) to (7) are arranged so as to face the emission surface, and further laser light (1a) to be output from each of the above chips.
Each spread angle of (3a) is 10 ° and each chip (1) ~
When the distance between (3) and the light receiving elements (5) to (7) is 500 μm or more, the laser beams are superposed on the light receiving element side. Therefore, the light receiving elements (5) to (7) also receive the laser light output from the chips other than the laser chips facing each other, and it becomes impossible to monitor each laser chip.
尚、各チツプ（１）〜（３）と受光素子（５）〜（７）
との距離を500μｍ以下とすると上記問題は解決できる
が、このように近接させることはレーザチツプと受光素
子との光軸合せ及びワイヤボンドによる配線等が繁雑と
なり実用的ではない。Incidentally, each of the chips (1) to (3) and the light receiving elements (5) to (7)
Although the above problem can be solved by setting the distance between and to 500 μm or less, such close proximity is not practical because alignment of the optical axis between the laser chip and the light receiving element and wiring by wire bonding are complicated.
そこで、本願出願人は実願昭61-185273号においてシリ
コン基板上に溝幅が同一の複数の導波溝が末広がり状に
形成された導波部材を各レーザチツプと受光素子との間
に配し、上記導波溝により各レーザチツプから出力され
るレーザ光を完全に分離する構成を提案した。Therefore, the applicant of the present application, in Japanese Utility Model Application No. 61-185273, arranges a waveguide member in which a plurality of waveguide grooves having the same groove width are formed in a divergent shape on a silicon substrate between each laser chip and a light receiving element. , A structure has been proposed in which the laser light output from each laser chip is completely separated by the waveguide groove.
第４図は実願昭61-185273号において提案された装置を
示し（８）は導波部材であり、（９）〜（11）は該導波
部材に形成された導波溝である。尚、第４図中、第３図
と同一箇所には同一番号を付し、説明を省略する。FIG. 4 shows the device proposed in Japanese Utility Model Application No. 61-185273 (8) is a waveguide member, and (9) to (11) are waveguide grooves formed in the waveguide member. In FIG. 4, the same parts as those in FIG. 3 are designated by the same reference numerals, and the description thereof will be omitted.
然るに、斯る構成では、中央のレーザチツプ（２）と対
応する導波溝（10）の延在方向は斯るチツプ（２）から
出力されるレーザ光（2a）の出射方向と平行となるため
問題はないが、左右のレーザチツプ（１）（３）と対応
する導波溝（９）（11）の延在方向は斯るチツプ（１）
（３）から出力されるレーザ光（1a）（3a）の出射方向
と平行とはならないため、上記中央の導波溝（10）を導
波するレーザ光（2a）に較べて左右の導波溝（９）（1
1）を導波するレーザ光（1a）（3a）の溝壁面では反射
減衰量が大となる。この結果受光素子（５）〜（７）の
出力は左右のものが中央のものに比べて1/10以下に減少
するので、充分なモニタが不可能であつた。However, in such a configuration, the extending direction of the waveguide groove (10) corresponding to the central laser chip (2) is parallel to the emission direction of the laser light (2a) output from the chip (2). Although there is no problem, the extending direction of the waveguide grooves (9) and (11) corresponding to the left and right laser chips (1) and (3) is such chip (1).
Since it is not parallel to the emission direction of the laser light (1a) (3a) output from (3), the left and right waveguides are guided as compared to the laser light (2a) guided through the central waveguide groove (10). Groove (9) (1
The return loss becomes large on the groove wall surface of the laser light (1a) (3a) that guides 1). As a result, the outputs of the light receiving elements (5) to (7) on the left and right sides are reduced to 1/10 or less of those on the center side, so that it is impossible to monitor them sufficiently.
（ニ）問題点を解決するための手段 本発明は斯る点に鑑みてなされたもので、その構成的特
徴は、複数の平行な軸に沿つて、夫々前後２方向にレー
ザビームを出射する半導体レーザ手段と、該半導体レー
ザ手段から１方向に出射される各レーザビームを夫々個
々に検出する複数の受光領域が配された受光素子と、上
記半導体レーザ手段と上記受光素子との間に配置され、
上記各レーザビームを上記各受光領域へ導く複数の導波
溝が形成された導波部材からなる半導体レーザ装置にお
いて、 上記導波溝はその延在方向が上記各レーザビームの出射
方向に対して角度をもつものほど幅広としたことにあ
る。(D) Means for Solving the Problems The present invention has been made in view of the above points, and its structural feature is to emit a laser beam in two front and rear directions along a plurality of parallel axes. The semiconductor laser means, a light receiving element having a plurality of light receiving regions for individually detecting the laser beams emitted from the semiconductor laser means in one direction, and the light receiving element are arranged between the semiconductor laser means and the light receiving element. Is
In a semiconductor laser device comprising a waveguide member in which a plurality of waveguide grooves for guiding the laser beams to the light receiving regions are formed, the waveguide groove has an extending direction with respect to an emission direction of the laser beams. The wider the angle, the wider.
（ホ）作用 斯る構成によれば、導波溝内でのレーザ光の反射回数を
減少できる。(E) Action According to this configuration, the number of times the laser light is reflected in the waveguide groove can be reduced.
（ヘ）実施例 第１図及び第２図は本発明の一実施例を示し、（21）は
ヒートシンクであり、シリコン等の半導体もしくは金属
等の良放熱体からなる。（22）はヒートシンク（21）の
一主面上に積層されたIn層、（23）は１対のレーザ光出
射面を有する第１〜第３半導体レーザチツプ（24）〜
（26）からなるレーザアレイであり、該アレイはヒート
シンク（21）の一主面の左端側に各チツプ（24）〜（2
6）から出力されるレーザ光（24a）〜（26a）の光軸（2
4b）〜（26b）が平行となるように整列配置される。（2
7）はシリコンからなる受光素子、（28）〜（30）は該
受光素子の一主面に形成された第１〜第３受光領域であ
り、上記受光素子（27）はその一主面が各レーザチツプ
（24）〜（26）の１方のレーザ光出射面と対向するよう
にヒートシンク（21）の右側に配される。尚、上記領域
（28）〜（30）の間隔は上記光軸（24b）〜（26b）の間
隔より大である。（31）はシリコンからなる導波手段で
あり、該手段は上記レーザチツプ（24）〜（26）に隣接
してヒートシンク（21）上に固着される。（32）〜（3
4）は上記導波手段（31）の固着面側にダイシングもし
くはエツチングにより形成された第１〜第３導波溝であ
り、該溝は上記レーザアレイ（23）側から受光素子（2
7）側へ延在し、その開口はレーザアレイ（23）側では
上記光軸（24b）〜（26b）の間隔と、また受光素子（2
3）側では受光領域（28）〜（30）の間隔と夫々同一と
なるように形成される。従つて、第２図に示す如く第２
レーザチツプ（25）のレーザ光出射面と第２受光領域
（29）とが対向する場合、第２導波溝（33）は光軸（24
b）〜（26b）と平行に延在し、第１、第３導波溝（32）
（34）は光軸（24b）〜（26b）に平行に延在しないこと
となる。また、上記第１、３導波溝（32）（34）の溝幅
は第１導波溝（33）のそれの約２倍とすると共に各溝
（32）〜（34）の内面には金等を蒸着し、光反射性を高
めている。(F) Embodiment FIG. 1 and FIG. 2 show an embodiment of the present invention, and (21) is a heat sink, which is made of a semiconductor such as silicon or a good heat radiator such as metal. (22) is an In layer laminated on one main surface of the heat sink (21), and (23) is a first to third semiconductor laser chip (24) having a pair of laser light emitting surfaces.
(26) is a laser array, and the array is provided on each of the chips (24) to (2) on the left end side of one main surface of the heat sink (21).
6) Laser beams (24a) to (26a) output from the optical axis (2
4b) to (26b) are arranged in parallel. (2
7) is a light receiving element made of silicon, (28) to (30) are first to third light receiving regions formed on one main surface of the light receiving element, and the light receiving element (27) has one main surface The laser chips (24) to (26) are arranged on the right side of the heat sink (21) so as to face one of the laser light emitting surfaces. The distance between the regions (28) to (30) is larger than the distance between the optical axes (24b) to (26b). Reference numeral (31) is a waveguide means made of silicon, and the means is fixed on the heat sink (21) adjacent to the laser chips (24) to (26). (32) ~ (3
4) are first to third waveguide grooves formed on the fixed surface side of the waveguide means (31) by dicing or etching, and these grooves are formed from the laser array (23) side to the light receiving element (2).
7) side, and the opening is on the laser array (23) side at the interval between the optical axes (24b) to (26b) and at the light receiving element (2
On the 3) side, the light receiving regions (28) to (30) are formed so as to have the same intervals. Therefore, as shown in FIG.
When the laser light emitting surface of the laser chip (25) and the second light receiving region (29) face each other, the second waveguide groove (33) is provided with the optical axis (24
b) to (26b), extending in parallel with the first and third waveguide grooves (32)
(34) does not extend parallel to the optical axes (24b) to (26b). The groove widths of the first and third waveguide grooves (32) and (34) are about twice those of the first waveguide groove (33), and the inner surfaces of the grooves (32) to (34) are Gold etc. are vapor-deposited to enhance light reflectivity.
斯る装置では、第１〜第３レーザチツプ（24）〜（26）
から出射されるレーザ光（24a）〜（26a）は夫々第１〜
第３導波溝（32）〜（34）を伝わつて第１〜第３受光領
域（28）〜（30）に入射することとなる。In such a device, the first to third laser chips (24) to (26)
The laser beams (24a) to (26a) emitted from the
The light propagates through the third waveguide grooves (32) to (34) and enters the first to third light receiving regions (28) to (30).
また、斯る装置において第１〜第３レーザチツプ（24）
〜（26）から夫々同一出力のレーザ光を出射させたとこ
ろ、第１〜第３受光領域（28）〜（30）に入射するレー
ザ光量の比は1:3:1乃至1:1:1となつた。Further, in such a device, the first to third laser chips (24)
When the laser light having the same output is emitted from each of (26) to (26), the ratio of the amount of laser light incident on the first to third light receiving regions (28) to (30) is 1: 3: 1 to 1: 1: 1. Tonatsuta.
尚、本実施例では光軸（24b）〜（26b）に平行でない導
波溝の溝幅を光軸に平行な導波溝の溝幅の約２倍とした
が、このような溝幅は光軸と導波溝との角度によつて変
更すべきものである。即ち、上記光軸と導波溝との角度
が大きくなればなるほど上記倍率を大きくすることによ
り導波溝内での光反射回数を減少させて、反射によるレ
ーザ光の減衰を抑止できる。In the present embodiment, the groove width of the waveguide groove that is not parallel to the optical axes (24b) to (26b) is set to about twice the groove width of the waveguide groove that is parallel to the optical axis. It should be changed depending on the angle between the optical axis and the waveguide groove. That is, as the angle between the optical axis and the waveguide groove increases, the magnification is increased to reduce the number of times light is reflected in the waveguide groove, and it is possible to suppress attenuation of laser light due to reflection.
（ト）発明の効果 本発明によれば、各レーザチツプから出力される各レー
ザ光を従来に比して充分大きくモニタできる。(G) Effect of the Invention According to the present invention, each laser beam output from each laser chip can be monitored sufficiently larger than in the conventional case.
【図面の簡単な説明】 第１図及び第２図は本発明の実施例を示し、第１図は第
２図のＢ−Ｂ′線断面図、第２図は第１図のＡ−Ａ′線
断面図、第３図及び第４図は夫々従来例を説明するため
の模式図及び断面図である。 （23）…レーザアレイ、（24）〜（26）…第１〜第３半
導体レーザチツプ、（27）…受光素子、（28）〜（30）
…第１〜第３受光領域、（31）…導波部材、（32）〜
（34）…第１〜第３導波溝。BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 and 2 show an embodiment of the present invention. FIG. 1 is a sectional view taken along the line BB ′ of FIG. 2, and FIG. 2 is AA of FIG. A line sectional view, FIG. 3 and FIG. 4 are a schematic view and a sectional view for explaining a conventional example, respectively. (23) ... Laser array, (24) to (26) ... First to third semiconductor laser chips, (27) ... Light receiving element, (28) to (30)
... First to third light receiving regions, (31) ... Waveguide member, (32) to
(34) ... First to third waveguide grooves.
Claims (1)
にレーザビームを出射する半導体レーザ手段と、該半導
体レーザ手段から１方向に出射される各レーザビームを
夫々個々に検出する複数の受光領域が配された受光素子
と、上記半導体レーザ手段と上記受光素子との間に配置
され、上記各レーザビームを上記各受光領域へ導く複数
の導波溝が形成された導波部材と、からなる半導体レー
ザ装置において、 上記導波溝はその延在方向が上記各レーザビームの出射
方向に対して角度をもつものほど幅広としたことを特徴
とする半導体レーザ装置。1. A plurality of semiconductor laser means for emitting laser beams in two front and rear directions along a plurality of parallel axes, and a plurality of semiconductor laser means for individually detecting each laser beam emitted in one direction from the semiconductor laser means. A light-receiving element having a light-receiving region, and a waveguide member disposed between the semiconductor laser means and the light-receiving element and having a plurality of waveguide grooves for guiding the laser beams to the light-receiving regions. In the semiconductor laser device according to the present invention, the waveguide groove is wider as the extending direction of the waveguide groove has an angle with respect to the emission direction of each laser beam.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038251A JPH0728092B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor laser device |
| KR1019880001238A KR900008629B1 (en) | 1987-02-20 | 1988-02-10 | Semiconductor laser system |
| US07/157,049 US4847848A (en) | 1987-02-20 | 1988-02-16 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62038251A JPH0728092B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63204781A JPS63204781A (en) | 1988-08-24 |
| JPH0728092B2 true JPH0728092B2 (en) | 1995-03-29 |
Family
ID=12520093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62038251A Expired - Lifetime JPH0728092B2 (en) | 1987-02-20 | 1987-02-20 | Semiconductor laser device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0728092B2 (en) |
| KR (1) | KR900008629B1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0297081A (en) * | 1988-10-03 | 1990-04-09 | Mitsubishi Electric Corp | Semiconductor array laser |
| JPH0323959U (en) * | 1989-07-20 | 1991-03-12 | ||
| JPH06169136A (en) * | 1992-11-30 | 1994-06-14 | Canon Inc | Light emitting device, optical semiconductor device and manufacture thereof |
-
1987
- 1987-02-20 JP JP62038251A patent/JPH0728092B2/en not_active Expired - Lifetime
-
1988
- 1988-02-10 KR KR1019880001238A patent/KR900008629B1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63204781A (en) | 1988-08-24 |
| KR900008629B1 (en) | 1990-11-26 |
| KR880010523A (en) | 1988-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |