JPH0729144A - Magnetic recording medium - Google Patents

Magnetic recording medium

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Publication number
JPH0729144A
JPH0729144A JP17426893A JP17426893A JPH0729144A JP H0729144 A JPH0729144 A JP H0729144A JP 17426893 A JP17426893 A JP 17426893A JP 17426893 A JP17426893 A JP 17426893A JP H0729144 A JPH0729144 A JP H0729144A
Authority
JP
Japan
Prior art keywords
magnetic
atomic
recording medium
magnetic layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17426893A
Other languages
Japanese (ja)
Inventor
Jun Nozawa
順 野沢
Keiji Moroishi
圭二 諸石
Masato Kobayashi
正人 小林
Junichi Horikawa
順一 堀川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP17426893A priority Critical patent/JPH0729144A/en
Publication of JPH0729144A publication Critical patent/JPH0729144A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To set a combination of the coercive force and the squareness ratio at a desired optimum value, by adjusting the coercive force of a magnetic layer of Co alloy laminated on an undercoat of Cr alloy and the squareness ratio within a predetermined range. CONSTITUTION:A non-magnetic substrate 1 constitutes a glass disc. The substrate 1 and a sputtering target are set in a chamber of an RF magnetron sputtering device, when the pressure is reduced. While the substrate is kept at a specific temperature, Ar gas is introduced into the chamber to form a non-magnetic undercoating layer 2 by sputtering. Similarly, a layer 3 of Co, Pt, Cr and Mo alloy is formed on the undercoating layer 2 using Ar gas as a sputtering gas and a target of Co, Pt, Cr and Mo. A protecting layer 4 is formed with the use of a carbon plate as a target. Then, a lubricant layer 5 is applied on the protecting film 4, whereby a magnetic recording medium 6 is formed. The coercive force of the magnetic layer of Co alloy laminated on the undercoat of Cr alloy and the squareness ratio can be set at desired optimum values.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、大容量・高速アクセス
可能な磁気記憶装置であるハードディスク装置用の磁気
記録媒体に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic recording medium for a hard disk device which is a magnetic storage device having a large capacity and capable of high speed access.

【0002】[0002]

【従来の技術】近年、情報処理装置の高速・大容量化に
伴って主記憶装置の一部を成すハードディスク装置の高
速・大容量化が絶え間なく続けられている。大容量化に
は、高密度磁気記録が不可欠である。このために、薄膜
状の合金組織を用いる薄膜磁気記録技術が急速に進歩し
た。
2. Description of the Related Art In recent years, as the speed and capacity of information processing devices have increased, the speed and capacity of hard disk devices forming a part of main memory have been continuously increased. High-density magnetic recording is indispensable for increasing capacity. For this reason, thin-film magnetic recording technology using a thin-film alloy structure has made rapid progress.

【0003】特に、六方晶系の結晶構造を有し、c軸方
向に強い結晶磁気異方性を示すCo系金属が高密度磁性
材料として注目されている。Coそのものはc軸を磁化
容易軸とするが、磁化が大きすぎて最大減磁界が結晶磁
気異方性より少し大きい。したがって、適当な非磁化性
元素と混合して合金を作り、最大減磁界を結晶磁気異方
性より小さくするのである。
In particular, Co-based metal, which has a hexagonal crystal structure and exhibits a strong magnetocrystalline anisotropy in the c-axis direction, has attracted attention as a high-density magnetic material. Co itself has the c-axis as the easy axis of magnetization, but the magnetization is too large and the maximum demagnetizing field is slightly larger than the magnetocrystalline anisotropy. Therefore, the maximum demagnetizing field is made smaller than the magnetocrystalline anisotropy by mixing with an appropriate non-magnetizable element to form an alloy.

【0004】また、高密度水平記録を可能にするには、
膜平面内にc軸配向成分を有するように、かつ均一に粒
子状(膜面に対して柱状)に結晶成長させうること、お
よび基板との接着性が十分高い合金薄膜が得られること
が必要である。このために、従来の湿式塗布法に代っ
て、スパッタリングやイオンプレーティングという物理
蒸着法が開発された。これら物理蒸着法においては、蒸
着中または蒸着後に適当な温度で加熱処理することによ
って、結晶を再配列させて均質性を高め、保磁力Hcを
向上させることが出来る。保磁力は、磁気記録上、重要
な特性のひとつである。保磁力が小さいと外部の擾乱磁
界によって記録が乱されるが、あまり大きすぎるとヘッ
ドのコイルへの入力信号を大きくするか、あるいは飽和
磁束密度の大きな材料をヘッドコアに用いなければ記録
できなくなる。
In order to enable high density horizontal recording,
It is necessary to have a crystal growth in the form of particles (columnar to the film surface) so that the film has a c-axis orientation component in the film plane, and to obtain an alloy thin film with sufficiently high adhesion to the substrate. Is. For this reason, physical vapor deposition methods such as sputtering and ion plating have been developed in place of the conventional wet coating method. In these physical vapor deposition methods, by performing heat treatment at an appropriate temperature during or after vapor deposition, crystals can be rearranged to enhance homogeneity and improve coercive force Hc. Coercive force is one of the important characteristics in magnetic recording. If the coercive force is small, the external disturbing magnetic field disturbs the recording, but if the coercive force is too large, recording cannot be performed unless the input signal to the coil of the head is increased or a material having a high saturation magnetic flux density is used for the head core.

【0005】もうひとつの磁気記録媒体の重要な特性
は、角形比である。角形比とは飽和磁化Bsに対する残
留磁化Brの比、Br/Bsを指し、これが大きい(1
に近い)程、再生時の信号出力を大きくすることができ
る。残留磁化が大きいのは、その方向の磁気異方性エネ
ルギーが他の方向のエネルギーに比べて充分大きいから
である。すなわち、c軸が磁化容易軸である前記Co系
磁性体の場合は、c軸配向性が膜面内で高くなる程、残
留磁化が大きくなる傾向を示す。
Another important characteristic of magnetic recording media is the squareness ratio. The squareness ratio refers to the ratio of residual magnetization Br to saturation magnetization Bs, Br / Bs, which is large (1
The closer to), the larger the signal output during reproduction can be. The residual magnetization is large because the magnetic anisotropy energy in that direction is sufficiently larger than the energy in other directions. That is, in the case of the Co-based magnetic body in which the c-axis is the easy axis of magnetization, the residual magnetization tends to increase as the c-axis orientation increases in the film plane.

【0006】Co系合金薄膜媒体の中で、Co−Pt系
合金は高い飽和磁化Bsと高い保磁力、耐蝕性を示す磁
気材料として知られていたが、更に第3の元素Mとし
て、周期律表第IV族、第V族元素のいくつかから成る群
から選ばれた1種類を添加することにより、Hcおよび
Bsが広範囲に制御できることが報告された(山口他;
テレビジョン学会誌,第40巻,第6号,475−48
0頁,1986年刊)。また、Co−Ni−Cr合金磁
性層をガラス(又はNiP/Al)基板上に堆積したC
r系金属下地層上に物理蒸着すると、磁性層は下地層上
にエピタキシャル成長し、Hcが下地層の組成、すなわ
ちCrと合金を形成する元素の種類と混入濃度によって
影響を受けることが示された(N.Tani et a
l; J.Appl.Phys.67/(12)pp.
7507−7509(1990))。
Among Co-based alloy thin film media, Co-Pt-based alloys have been known as magnetic materials exhibiting high saturation magnetization Bs, high coercive force and corrosion resistance. It has been reported that Hc and Bs can be controlled over a wide range by adding one selected from the group consisting of some of the group IV and group V elements (Yamaguchi et al .;
Journal of Television Society, Volume 40, No. 6, 475-48
0 page, published in 1986). In addition, a Co—Ni—Cr alloy magnetic layer was deposited on a glass (or NiP / Al) substrate to form C.
When physical vapor deposition was performed on the r-based metal underlayer, the magnetic layer was epitaxially grown on the underlayer, and it was shown that Hc was influenced by the composition of the underlayer, that is, the kind and mixing concentration of elements forming an alloy with Cr. (N. Tani et a
l; J. Appl. Phys. 67 / (12) pp.
7507-7509 (1990)).

【0007】さらに、Co−Pt合金磁性層をCr系合
金(CrVやCrFe)下地層上に物理蒸着させ、合金
下地層の格子定数を変化させることにより膜面内におけ
る磁性層のc軸配向性を改善してHcおよび角形比を向
上させた例が報告されている(特公平4−16848号
公報)。
Further, a Co-Pt alloy magnetic layer is physically vapor-deposited on a Cr-based alloy (CrV or CrFe) underlayer, and the lattice constant of the alloy underlayer is changed to change the c-axis orientation of the magnetic layer in the film plane. Has been reported to improve Hc and squareness ratio (Japanese Patent Publication No. 4-16848).

【0008】[0008]

【発明が解決しようとする課題】前記した従来技術は、
Co系合金磁性層の磁気的性質がCr系合金下地層の組
成によって影響を受けHcおよび角形比(又は飽和磁
化)が改善されることを開示している。また、これら特
性の変化が堆積した磁性層合金粒子のc軸配向性に関連
することも示唆している。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention
It is disclosed that the magnetic properties of the Co-based alloy magnetic layer are influenced by the composition of the Cr-based alloy underlayer and Hc and squareness (or saturation magnetization) are improved. It is also suggested that these changes in properties are related to the c-axis orientation of the deposited magnetic layer alloy particles.

【0009】しかし、磁性層合金粒子のc軸配向性を膜
面内においてのみ高めることが問題にされており、事実
上角形比の向上だけが目的視され充分高い保磁力Hcと
角形比Br/Bsの組合せが得られているとは云えな
い。たとえば、前記した特公平4−16848号公報に
よれば、膜面から垂直方向に向くc軸配向粒子の分布を
制御できる技術が開示されておらず、その結果Co−P
t系磁性層で所望のHcとBr/Bsの組合せを得るよ
う組成制御できない場合が生ずる。特に、経済的観点か
らPt含有量を減少させると、c軸配向性を制御しうる
組成範囲が一層減少する結果となり、Hcおよび角形比
の最適化が困難であるという問題点があった。
However, it has been a problem to enhance the c-axis orientation of the magnetic layer alloy particles only in the film plane, and in fact, only the improvement of the squareness ratio is aimed at, and the sufficiently high coercive force Hc and the squareness ratio Br / It cannot be said that the combination of Bs has been obtained. For example, Japanese Patent Publication No. 4-16848 described above does not disclose a technique capable of controlling the distribution of c-axis oriented particles oriented in the vertical direction from the film surface, and as a result, Co-P
In some cases, the composition cannot be controlled to obtain a desired combination of Hc and Br / Bs in the t-based magnetic layer. In particular, when the Pt content is reduced from the economical point of view, the composition range in which the c-axis orientation can be controlled is further reduced, and it is difficult to optimize the Hc and the squareness ratio.

【0010】本発明の目的は、Cr系合金下地層上に積
層したCo系合金磁性層の保磁力Hcと角形比Br/B
sの組合せを所望の最適値に制御した比較的安価な磁気
記録媒体を提供することにある。
The object of the present invention is to provide a coercive force Hc and a squareness ratio Br / B of a Co-based alloy magnetic layer laminated on a Cr-based alloy underlayer.
It is to provide a relatively inexpensive magnetic recording medium in which the combination of s is controlled to a desired optimum value.

【0011】[0011]

【課題を解決するための手段】前記した従来技術の問題
点は、ひとつには磁性層合金粒子のc軸配向分布と保磁
力Hcおよび角形比との関係が大局的に把握されていな
かったことによって、また他のひとつには、c軸配向分
布の垂直方向の制御を有効に行なう方法が開発されてい
なかったことによって生じている。
One of the problems of the above-mentioned prior art is that the relationship between the c-axis orientation distribution of the magnetic layer alloy particles and the coercive force Hc and the squareness ratio has not been comprehensively understood. Another reason is that the method for effectively controlling the vertical direction of the c-axis orientation distribution has not been developed.

【0012】本発明は、X線回折法を用いることによっ
て、磁性層膜面内から垂直方向へ向って分布するc軸配
向性と保磁力および角形比の関係を求め、下地層および
磁性層の組成を所定のc軸配向パターン内に調節するこ
とによって所望のHcと角形比の組合せを満足するPt
配合比の小さな磁気記録媒体を得たものである。
In the present invention, by using the X-ray diffraction method, the relationship between the coercive force and the squareness ratio of the c-axis orientation distributed in the perpendicular direction from the film surface of the magnetic layer is obtained, and the underlayer and the magnetic layer are formed. Pt that satisfies a desired combination of Hc and squareness by adjusting the composition within a predetermined c-axis orientation pattern
A magnetic recording medium having a small compounding ratio was obtained.

【0013】すなわち、本発明は、非磁性基板上に少な
くとも(1)CrおよびCrより原子半径の大きな非磁
性元素Xを含む非磁性下地層と、(2)CoおよびCo
より原子半径の大きな非磁性元素Yを含む磁性層と、を
この順で積層して成り、前記磁性層を構成する磁性粒子
のc軸配向分布が、前記非磁性下地層に含まれる前記元
素Xの配合濃度xの関数であり、xが増大するにつれて
前記磁性層膜面に垂直配向型から当該膜面内配向型へと
移行するc軸配向遷移領域を有するように前記元素Yの
配合濃度yおよび前記xを選択することを特徴とする磁
気記録媒体を要旨とする。
That is, according to the present invention, at least (1) a nonmagnetic underlayer containing Cr and a nonmagnetic element X having a larger atomic radius than Cr, and (2) Co and Co.
A magnetic layer containing a non-magnetic element Y having a larger atomic radius is laminated in this order, and the c-axis orientation distribution of the magnetic particles forming the magnetic layer is the element X contained in the non-magnetic underlayer. Is a function of the compounding concentration x, and the compounding concentration y of the element Y has a c-axis orientation transition region that transitions from the vertical orientation type to the in-plane orientation type on the magnetic layer film surface as x increases. And a magnetic recording medium characterized by selecting the above-mentioned x.

【0014】本発明の磁気記録媒体において、前記xと
yの関係は、yを所定値に選んだとき、前記c軸配向分
布が前記c軸配向遷移領域に入るようにxを選択するこ
とが好ましい。また、本発明の磁気記録媒体において、
前記磁性層は、さらにPtおよびCrを含む合金層であ
ることが好ましい。
In the magnetic recording medium of the present invention, the relation between x and y may be selected so that the c-axis orientation distribution falls within the c-axis orientation transition region when y is selected as a predetermined value. preferable. In the magnetic recording medium of the present invention,
The magnetic layer is preferably an alloy layer further containing Pt and Cr.

【0015】本発明の磁気記録媒体において、前記元素
Xは、Mo,Al,Ti,Zr,Nb,Hf,Taおよ
びWから成る群より選ばれた少なくとも1種類であるの
が好ましい。また、本発明の磁気記録媒体において、前
記元素Yは、Mo,Al,V,Zr,Nb,Hf,Ta
およびWから成る群より選ばれた少なくとも1種類であ
るのが好ましい。
In the magnetic recording medium of the present invention, the element X is preferably at least one selected from the group consisting of Mo, Al, Ti, Zr, Nb, Hf, Ta and W. In the magnetic recording medium of the present invention, the element Y is Mo, Al, V, Zr, Nb, Hf, Ta.
It is preferably at least one selected from the group consisting of and W.

【0016】また、本発明の磁気記録媒体において、各
元素のより好ましい組成は、非磁性下地層中のCrが4
0原子%以上100原子%未満、磁性層中のCoが70
原子%以上90原子%以下であるのが好ましい。また磁
性層がPtおよびCrを含む場合、磁性層中のPtは4
原子%以上20原子%以下、Crは2原子%以上16原
子%以下であるのが好ましい。また前記元素Xは60原
子%以下であり、また前記元素Yは20原子%以下であ
るのが好ましい。
In the magnetic recording medium of the present invention, the more preferable composition of each element is that the Cr in the non-magnetic underlayer is 4 or less.
0 atomic% or more and less than 100 atomic%, Co in the magnetic layer is 70
It is preferable that the content is not less than atomic% and not more than 90 atomic%. When the magnetic layer contains Pt and Cr, Pt in the magnetic layer is 4
It is preferable that the content of Cr is 2 atomic% or more and 20 atomic% or less, and the content of Cr is 2 atomic% or more and 16 atomic% or less. Further, it is preferable that the element X is 60 atomic% or less and the element Y is 20 atomic% or less.

【0017】本発明によれば、前記非磁性下地層に配合
する非磁性元素Xおよび前記磁性層に配合する非磁性元
素Yを、それぞれ各層の主成分であるCrおよびCoよ
り原子半径が大きくすることにより、これら元素の合金
化によって各層の格子定数を増大させる。格子定数の変
化量は元素X,Yの配合量であるx,yの値によって決
まるので、適当なX,Y,x,yを選択することによっ
て非磁性下地層と磁性層間の格子整合をはかることがで
きる。その結果、磁性層粒子のc軸配向分布を適切に制
御することができ、白金配合比の低い組成において従来
より高い保磁力と角形比をもつ磁気記録媒体を得ること
ができる。
According to the present invention, the non-magnetic element X contained in the non-magnetic underlayer and the non-magnetic element Y contained in the magnetic layer have atomic radii larger than those of Cr and Co, which are the main components of each layer. This increases the lattice constant of each layer by alloying these elements. The amount of change in the lattice constant is determined by the values of x and y, which are the compounding amounts of the elements X and Y. Therefore, by selecting appropriate X, Y, x, and y, the lattice matching between the non-magnetic underlayer and the magnetic layer can be achieved. be able to. As a result, the c-axis orientation distribution of the magnetic layer particles can be appropriately controlled, and a magnetic recording medium having a higher coercive force and squareness ratio than before can be obtained in a composition having a low platinum compounding ratio.

【0018】次に本発明の磁気記録媒体における各元素
の好ましい配合量について説明する。磁性層の主成分で
あるCoが60原子%未満であると、磁化能力が低下す
るため所望の残留磁化Brが得られなくなる。逆に、9
0原子%を超えると他の成分であるPtやCrの含有量
が10原子%以下となり、保磁力Hcを充分高めること
ができなくなる。したがって、Coは60〜90原子%
が好ましく、HcとBrの両方を考慮すると特に70〜
86原子%が好ましい。
Next, the preferable blending amount of each element in the magnetic recording medium of the present invention will be described. When Co, which is the main component of the magnetic layer, is less than 60 atomic%, the magnetizing ability is deteriorated and the desired residual magnetization Br cannot be obtained. Conversely, 9
If it exceeds 0 atomic%, the content of Pt and Cr, which are other components, becomes 10 atomic% or less, and the coercive force Hc cannot be sufficiently increased. Therefore, Co is 60 to 90 atomic%
Is preferred, and when considering both Hc and Br, it is especially 70-
86 atom% is preferable.

【0019】一方、磁性層中のPtは、Brを小さくす
ることなくHcを増大させるために配合されるが、4原
子%未満ではその効果が薄く、20原子%を超えるとB
rが減少する上に経済的観点からも好ましくない。した
がって、Ptの配合量は4〜20原子%が好ましく、B
rとHcの両方を考慮すると、特に好ましくは5〜16
原子%の範囲である。
On the other hand, Pt in the magnetic layer is added in order to increase Hc without reducing Br, but if the amount is less than 4 atom%, the effect is small, and if it exceeds 20 atom%, B is increased.
In addition to reducing r, it is not preferable from an economical point of view. Therefore, the compounding amount of Pt is preferably 4 to 20 atomic%, and
Considering both r and Hc, particularly preferably 5 to 16
It is in the atomic% range.

【0020】さらに、磁性層中に配合されるCrは、磁
性層形成中または形成後に加熱することによってHcを
増加させる作用を有する。その配合量は、2原子%未満
では効果が小さく、16原子%を超えるとBrを低下さ
せるため、2〜16原子%が好ましく、BrとHcの両
方を考慮すると6〜14原子%が好ましい。
Further, Cr mixed in the magnetic layer has an action of increasing Hc by heating during or after the formation of the magnetic layer. If the content is less than 2 atomic%, the effect is small, and if it exceeds 16 atomic%, Br is lowered. Therefore, 2 to 16 atomic% is preferable, and 6 to 14 atomic% is preferable in consideration of both Br and Hc.

【0021】また、磁性層に添加される元素Y(Mo,
Al,Ti,V,Zr,Nb,Hf,Ta,W)は磁性
層の格子定数を変化させ、保磁力と角形比を制御する作
用を示すが、20原子%を超えると、Brが減少して好
ましくないので、20原子%以下が好ましく、Br、角
形比およびHc等を考慮すると、1〜14原子%が特に
好ましい。
Further, the element Y (Mo,
Al, Ti, V, Zr, Nb, Hf, Ta, W) changes the lattice constant of the magnetic layer and controls the coercive force and squareness ratio, but when it exceeds 20 atomic%, Br decreases. 20 atomic% or less is preferable, and 1 to 14 atomic% is particularly preferable in view of Br, squareness ratio, Hc and the like.

【0022】次に下地層の主成分であるCrは、非磁性
原子であり、基板および磁性層との密着性にすぐれてい
るために含有させるが、その配合量が40原子%未満で
は密着性,格子整合性の観点から不適切となり、100
原子%では元素Xを含有させることができず、保磁力,
角形比を大きくできないので、40原子%以上100原
子%未満が好ましく、特に70〜90原子%が好まし
い。
Next, Cr, which is the main component of the underlayer, is a non-magnetic atom and is included because it has excellent adhesion to the substrate and the magnetic layer. However, if the compounding amount is less than 40 atomic%, the adhesion is improved. , Becomes unsuitable from the viewpoint of lattice matching, 100
At atomic%, the element X cannot be contained, and the coercive force,
Since the squareness ratio cannot be increased, it is preferably 40 atomic% or more and less than 100 atomic%, and particularly preferably 70 to 90 atomic%.

【0023】また下地層に添加される元素X(Mo,A
l,Ti,V,Zr,Nb,Hf,Ta,W)は下地層
の格子定数を変化させ、保磁力と角形比を制御する作用
を有するが、60原子%以下の配合量が好ましい。60
原子%を超えると格子定数が過大となりすぎ、磁性層と
格子整合できないからである。Br,Hc,角形比など
を考慮するとXは1〜30原子%であるのが好ましい。
The element X (Mo, A added to the underlayer)
(l, Ti, V, Zr, Nb, Hf, Ta, W) has the effect of changing the lattice constant of the underlayer to control the coercive force and the squareness ratio, but the compounding amount of 60 atomic% or less is preferable. 60
This is because if the atomic percentage is exceeded, the lattice constant becomes too large and lattice matching with the magnetic layer is impossible. Considering Br, Hc, squareness ratio, etc., X is preferably 1 to 30 atom%.

【0024】なお、物理蒸着による成膜は100℃〜4
00℃に加熱して行なわれるならば、再配列が容易にな
るため成膜条件(スパッタ,ガス圧,成膜速度,真空度
等)の影響をあまり受けずにc軸配向を制御することが
できる上に保磁力も大きくできるので好ましい。基板温
度が100℃未満の低温成膜は成膜条件によりc軸配向
が支配され、また400℃を超える加熱では保磁力が小
さくなる。これは、Crの結晶粒が大きくなるためと考
えられる。なお、成膜後は400℃を超えて加熱しても
よい。
The film formation by physical vapor deposition is 100 ° C. to 4 ° C.
If the heating is performed at 00 ° C., the rearrangement becomes easy, and therefore the c-axis orientation can be controlled without being affected by the film forming conditions (sputtering, gas pressure, film forming rate, vacuum degree, etc.). In addition to being capable of increasing the coercive force, it is preferable. The c-axis orientation is dominated by the film forming conditions in the low temperature film formation in which the substrate temperature is less than 100 ° C., and the coercive force becomes small in the case of heating above 400 ° C. It is considered that this is because the crystal grains of Cr become large. Note that after the film formation, heating may be performed at higher than 400 ° C.

【0025】[0025]

【実施例】図1は、本発明の実施例における磁気記録媒
体の層構成を示す図である。図において、非磁性基板1
は、直径65mmφ、厚さ0.9mmのガラスディスク
である。この基板1およびスパッタリングターゲットを
RFマグネトロンスパッタリング装置のチャンバー内に
装填して、5×10-7Torr以下の真空度まで減圧す
る。次に基板温度を300℃に保持し、Arガスを20
mTorrの分圧でチャンバー内に導入して、投入電力
密度2.5W/cm2 でまず非磁性下地層2をスパッタ
リングにより形成した。非磁性下地層2のスパッタリン
グには、Cr90原子%、Mo10原子%のスパッタリ
ングターゲットを用い厚さ100nmのCrMo合金層
を成膜した。
FIG. 1 is a diagram showing the layer structure of a magnetic recording medium in an embodiment of the present invention. In the figure, the non-magnetic substrate 1
Is a glass disk having a diameter of 65 mmφ and a thickness of 0.9 mm. The substrate 1 and the sputtering target are loaded into the chamber of the RF magnetron sputtering apparatus, and the pressure is reduced to a vacuum degree of 5 × 10 −7 Torr or less. Next, the substrate temperature is maintained at 300 ° C., and Ar gas is set to 20.
It was introduced into the chamber with a partial pressure of mTorr, and the nonmagnetic underlayer 2 was first formed by sputtering with an input power density of 2.5 W / cm 2 . For the sputtering of the non-magnetic underlayer 2, a CrMo alloy layer having a thickness of 100 nm was formed using a sputtering target of 90 atomic% Cr and 10 atomic% Mo.

【0026】同様に、アルゴンをスパッタリングガスと
して、組成Co77原子%、Pt9原子%、Cr10原
子%、Mo4原子%のターゲットを用い、前記非磁性下
地層2上に厚さ40nmのCoPtCrMo合金層を成
膜した。次に、同様にアルゴンをスパッタリングガスと
して、カーボンプレートをターゲットに用い、膜厚40
nmの保護層4を成膜した。
Similarly, a target having a composition of 77 atomic% Co, 9 atomic% Pt, 10 atomic% Cr and 4 atomic% Mo was used with argon as a sputtering gas to form a 40 nm thick CoPtCrMo alloy layer on the non-magnetic underlayer 2. Filmed Next, similarly, argon was used as a sputtering gas, a carbon plate was used as a target, and a film thickness of 40
A protective layer 4 having a thickness of 4 nm was formed.

【0027】保護層4を成膜後試料をスパッタリング装
置外へ取出し、保護層4上に厚さ2nmのパーフロロポ
リエーテルから成る潤滑層5を塗布して磁気記録媒体6
を得た。この磁気記録媒体の磁気特性を測定すると、保
磁力は1750(Oe)、角形比は0.78であった。
After forming the protective layer 4, the sample is taken out of the sputtering apparatus, and the protective layer 4 is coated with a lubricating layer 5 made of perfluoropolyether having a thickness of 2 nm to form a magnetic recording medium 6.
Got When the magnetic characteristics of this magnetic recording medium were measured, the coercive force was 1750 (Oe) and the squareness ratio was 0.78.

【0028】実施例1に対する比較例として、非磁性下
地層合金および磁性層合金にMoを添加しない磁気記録
媒体(比較例1)、磁性層合金にMoを添加しない磁気
記録媒体(比較例2)、非磁性下地層合金にMoを添加
しない磁気記録媒体(比較例3)を作製し、保磁力およ
び角形比を測定した結果を表1に示す。
As a comparative example to Example 1, a magnetic recording medium in which Mo is not added to the non-magnetic underlayer alloy and the magnetic layer alloy (Comparative Example 1) and a magnetic recording medium in which Mo is not added to the magnetic layer alloy (Comparative Example 2) A magnetic recording medium (Comparative Example 3) in which Mo was not added to the non-magnetic underlayer alloy was prepared, and the coercive force and the squareness ratio were measured.

【0029】[0029]

【表1】 [Table 1]

【0030】表1から明らかな如く、非磁性下地層のみ
にMoを配合した比較例2では、全くMoを配合しない
場合に比べて角形比は向上するが、保磁力は低下する。
また、磁性層のみにMoを配合した比較例3では角形
比,保磁力共に低下する。これに対して、両層にMoを
配合した本実施例の場合、保磁力,角形比共に向上する
ことがわかる。
As is clear from Table 1, in Comparative Example 2 in which Mo is mixed only in the non-magnetic underlayer, the squareness ratio is improved, but the coercive force is decreased, as compared with the case where Mo is not mixed at all.
Further, in Comparative Example 3 in which Mo is mixed only in the magnetic layer, both the squareness ratio and the coercive force decrease. On the other hand, in the case of this example in which both layers are mixed with Mo, it is understood that both the coercive force and the squareness ratio are improved.

【0031】表1に示した二つの磁性層組成、すなわち
非磁性元素Y(=Mo)を配合しないCo81Pt9 Cr
10および非磁性元素Y(=Mo)をCoおよびCrの一
部と置換して配合した組成Co78Pt9 Cr9 Mo4
各場合について、非磁性下地層組成の変化(非磁性元素
X(=Mo)の配合割合)が磁性層の磁気特性に与える
影響を測定した。得られた結果を、それぞれ図2および
図3に示す。
The two magnetic layer compositions shown in Table 1, that is, Co 81 Pt 9 Cr containing no non-magnetic element Y (= Mo)
In each case of the composition Co 78 Pt 9 Cr 9 Mo 4 in which 10 and the non-magnetic element Y (= Mo) were replaced by a part of Co and Cr, the change in the composition of the non-magnetic underlayer (the non-magnetic element X ( The effect of the composition ratio of Mo) on the magnetic characteristics of the magnetic layer was measured. The obtained results are shown in FIGS. 2 and 3, respectively.

【0032】いずれの場合も非磁性下地層は配合する非
磁性元素X(=Mo)の量xが増大するにつれて角形比
Br/Bsは増加する傾向を示すが、保磁力Hcは異な
る挙動を示す。すなわち、Hcは磁性層にY(=Mo)
を配合した場合、xの増加につれてピーク値を示すが、
Yを配合しない場合は、xは増加と共に単純に減少す
る。
In any case, the nonmagnetic underlayer tends to increase the squareness ratio Br / Bs as the amount x of the nonmagnetic element X (= Mo) to be mixed increases, but the coercive force Hc behaves differently. . That is, Hc is Y (= Mo) in the magnetic layer.
In the case of blending, the peak value is shown as x increases,
Without Y, x simply decreases with increasing.

【0033】この理由を調べるために、X線回折による
極点解析法を利用して各場合について磁性層粒子のc軸
配向分布を測定した。加速電圧50kVのCuKα線
(λ=1.5405A)を15mmφに加工した試料に
照射してSchulzの反射法によるX線回折を行な
い、極点解析のデータとした。スリットは、D.S.=
1.0度,S.S.=6.0mm,R.S.=6.0m
mとした。測定角度範囲は、20〜90度である。X線
回折は反射法を用いて行なったので、20度以下は測定
してない。測定角度間隔は、膜面から垂直方向への角度
αが5.0度、膜面内の角度βが5.0度とした。ま
た、測定時間は1測定点につき5.00秒である。
In order to investigate the reason for this, the c-axis orientation distribution of the magnetic layer particles was measured in each case using the pole analysis method by X-ray diffraction. CuKα rays (λ = 1.5405A) with an accelerating voltage of 50 kV were irradiated to the sample processed to 15 mmφ, and X-ray diffraction was performed by the Schulz reflection method to obtain data for pole analysis. The slit is D.I. S. =
1.0 degree, S.I. S. = 6.0 mm, R.I. S. = 6.0 m
m. The measurement angle range is 20 to 90 degrees. Since the X-ray diffraction was performed by using the reflection method, the measurement was not performed at 20 degrees or less. The measurement angle interval was such that the angle α from the film surface in the vertical direction was 5.0 degrees and the angle β in the film surface was 5.0 degrees. The measurement time is 5.00 seconds for each measurement point.

【0034】X線回折は、六方晶構造を有するCoの
(002),(100)および(101)について行な
った。α=20〜90度におけるc軸配向分布は(00
2)から求め、α<20度におけるc軸配向分布はCo
(100)およびCo(101)から求めた。これらの
データを基にして膜面から垂直方向への角度θにおける
c軸配向分布を決定した。
X-ray diffraction was performed on Co (002), (100) and (101) having a hexagonal crystal structure. The c-axis orientation distribution at α = 20 to 90 degrees is (00
2), the c-axis orientation distribution at α <20 degrees is Co
Calculated from (100) and Co (101). Based on these data, the c-axis orientation distribution at the angle θ from the film surface to the vertical direction was determined.

【0035】図2および図3に対応した磁性層粒子のc
軸配向分布の角度θ依存性を、それぞれ図4および図5
に示す。図4は、Moを含まない磁性層Co81Pt9
10の非磁性下地組成が異なる二つの場合について調べ
たc軸配向分布である。図4(a)はx=0、すなわち
Cr下地層の場合であり、図4(b)はx=20原子%
すなわちCr80Mo20下地層の場合である。この2つの
図は代表例として示したものであるが、非磁性下地層の
Mo含有量xが増加するにつれて磁性層粒子のc軸配向
分布が磁性層膜面内に集中することがわかる。この傾向
はxの増加につれて保磁力Hcが単調に減少することに
対応している。
C of the magnetic layer particles corresponding to FIGS. 2 and 3.
The angle θ dependence of the axial orientation distribution is shown in FIG. 4 and FIG. 5, respectively.
Shown in. FIG. 4 shows a magnetic layer Co 81 Pt 9 C containing no Mo.
It is a c-axis orientation distribution examined for two cases in which r 10 has different non-magnetic underlayer compositions. FIG. 4A shows the case of x = 0, that is, the case of the Cr underlayer, and FIG. 4B shows x = 20 atomic%.
That is, the case of Cr 80 Mo 20 underlayer. Although these two figures are shown as representative examples, it can be seen that the c-axis orientation distribution of the magnetic layer particles concentrates in the magnetic layer film surface as the Mo content x of the nonmagnetic underlayer increases. This tendency corresponds to the coercive force Hc monotonically decreasing as x increases.

【0036】一方、図5はMoを4原子%含む磁性層C
78Pt9 Cr9 Mo4 のc軸配向分布に与える非磁性
下地層組成の影響を示したものである。この図は、3つ
の代表的な下地層組成、すなわち、図3において、x=
0のCr下地層(図5(a))、図3でHcがピークを
示すx=10原子%のCr90Mo10下地層(図5
(b))、および図3でHcの減少領域に当るx=20
原子%のCr80Mo20下地層(図5(c))についての
c軸配向分布を示す。図5(a),(b),(c)は、
xの増加につれて、最初膜面から垂直方向(θ=90
度)に分布していたc軸配向粒子が磁性層膜面内(θ=
0度)に次第に分布をかえていくことを示している。そ
して、途中の遷移領域(図5(b))でHcがピークを
示すことがわかる。遷移領域では40度≦θ≦70度の
中間角度をとるc軸配向粒子の割合が高くなる。
On the other hand, FIG. 5 shows a magnetic layer C containing 4 atomic% of Mo.
It shows the effect of the composition of the non-magnetic underlayer on the c-axis orientation distribution of o 78 Pt 9 Cr 9 Mo 4 . This figure shows three typical underlayer compositions, that is, x =
Cr underlayer 0 (FIG. 5 (a)), x = 10 atomic% of Cr 90 Mo 10 underlayer Hc exhibits a peak in Figure 3 (Fig. 5
(B)), and x = 20 corresponding to the Hc decreasing region in FIG.
5 shows the c-axis orientation distribution for an atomic% Cr 80 Mo 20 underlayer (FIG. 5 (c)). 5 (a), (b), and (c)
As x increases, the direction perpendicular to the film surface (θ = 90)
C-axis oriented particles distributed in the magnetic layer film surface (θ =
It shows that the distribution gradually changes to 0 degree). Then, it can be seen that Hc shows a peak in the transition region (FIG. 5B) in the middle. In the transition region, the proportion of c-axis oriented particles having an intermediate angle of 40 ° ≦ θ ≦ 70 ° is high.

【0037】図2〜図5のデータを比較すると、次のよ
うに考えられる。磁性層および非磁性下地層が共にMo
を含まない場合(x=y=0の場合、比較例1)には、
下地層Crの格子定数が磁性層よりやや大きく、磁性層
には圧縮性歪がかかっている。下地層の合金化(元素X
の配合)によって格子定数がさらに大きくなれば、磁性
層の圧縮歪はますます大きくなる。このような場合、磁
性層粒子のc軸は膜面内に分布し、圧縮歪の大きさに応
じてHcは低下する。次に、磁性層に元素Yを加えて格
子定数を下地層より大きくすると、磁性層には引張り歪
が印加される。この時、磁性層粒子は膜面と垂直方向に
c軸配向する傾向を示す。この状態で下地層に元素Xを
配合して元素Xの配合量xを増加させると、引張り歪は
次第に緩和されてやがて歪の小さい(又は、無歪)状態
になる。歪が小さくなるにつれて、Hcは増加し、それ
と共にc軸配向性が乱れて上記した「遷移領域」に入
る。歪がもっとも小さな状態でHcはピークを示す。さ
らにxを増加させると、下地層の格子定数が磁性層より
大きくなり圧縮歪に転ずる。この領域では磁性層粒子の
c軸は膜面内配向性が強まり、歪の増大と共にHcは低
下する。ただしc軸の膜面内配向性が高まると角形比B
r/Bsは増加する。
Comparing the data of FIGS. 2 to 5, the following can be considered. Both the magnetic layer and the non-magnetic underlayer are Mo
When not including (when x = y = 0, Comparative Example 1),
The lattice constant of the underlayer Cr is slightly larger than that of the magnetic layer, and compressive strain is applied to the magnetic layer. Underlayer alloying (element X
If the lattice constant is further increased due to the (composition of), the compressive strain of the magnetic layer becomes even larger. In such a case, the c-axis of the magnetic layer particles is distributed in the film surface, and Hc decreases according to the magnitude of compressive strain. Next, when the element Y is added to the magnetic layer to make the lattice constant larger than that of the underlayer, tensile strain is applied to the magnetic layer. At this time, the magnetic layer particles tend to be c-axis oriented in the direction perpendicular to the film surface. In this state, when the element X is mixed in the underlayer to increase the blending amount x of the element X, the tensile strain is gradually relaxed and eventually the strain becomes small (or strain-free). As the strain becomes smaller, Hc increases, and along with this, the c-axis orientation is disturbed and enters the above-mentioned “transition region”. Hc shows a peak when the strain is the smallest. When x is further increased, the lattice constant of the underlayer becomes larger than that of the magnetic layer, and it turns into compressive strain. In this region, the c-axis of the magnetic layer grains has stronger in-plane orientation of the film, and Hc decreases as the strain increases. However, if the in-plane orientation of the c-axis increases, the squareness ratio B
r / Bs increases.

【0038】前記した実施例1の非磁性下地層の組成お
よび厚み、磁性層の組成および厚みを変えることなく、
成膜時の基板温度のみを変化させて得られた図1に示す
構造の磁気記録媒体の保磁力Hcを測定したデータを図
6に示す。基板温度100〜400℃の範囲において高
い保磁力が得られることがわかる。基板温度が400℃
を超えると下地層と磁性層の界面状態が合金化によって
劣化するので、実験を行なわなかった。また、図示して
ないが、磁性層の成膜後にたとえば300℃以上で加熱
処理してHc等の調節を行なってもよい。
Without changing the composition and thickness of the non-magnetic underlayer and the composition and thickness of the magnetic layer of Example 1 described above,
FIG. 6 shows data obtained by measuring the coercive force Hc of the magnetic recording medium having the structure shown in FIG. 1 obtained by changing only the substrate temperature during film formation. It can be seen that a high coercive force is obtained in the substrate temperature range of 100 to 400 ° C. Substrate temperature is 400 ° C
If it exceeds, the interface state between the underlayer and the magnetic layer deteriorates due to alloying, so no experiment was conducted. Although not shown, Hc and the like may be adjusted by heat treatment at 300 ° C. or higher after the magnetic layer is formed.

【0039】(実施例2)実施例1と同一のRFマグネ
トロンスパッタリング装置を用いて直径65mmφ、厚
さ0.9mmのガラスディスク基板上に、まず厚さ10
0nmのCr70Mo30非磁性下地層2を、次いでその上
に厚さ40nmのCo75Pt9 Cr6 Mo10磁性層3
を、さらにその上に厚さ40nmのカーボン保護層4を
連続的にスパッタリングした。基板温度を200℃とす
る以外、成膜条件は実施例1と同じにした。スパッタリ
ング装置から取出してカーボン保護層4上に潤滑層5を
塗布して磁気記録媒体6を得た。
(Embodiment 2) Using the same RF magnetron sputtering apparatus as in Embodiment 1, a glass disk substrate having a diameter of 65 mm and a thickness of 0.9 mm is first formed to a thickness of 10
0 nm of Cr 70 Mo 30 non-magnetic underlayer 2 and then 40 nm thick Co 75 Pt 9 Cr 6 Mo 10 magnetic layer 3
And a carbon protective layer 4 having a thickness of 40 nm was continuously sputtered thereon. The film forming conditions were the same as in Example 1 except that the substrate temperature was 200 ° C. The magnetic recording medium 6 was obtained by taking out from the sputtering device and applying the lubricating layer 5 on the carbon protective layer 4.

【0040】この磁気記録媒体の磁気特性を測定する
と、保磁力Hcが1600(Oe)、角形比Br/Bs
が0.85であった。実施例1の値と比較すると、Hc
が低下しているが、角形比は向上している。これは、磁
性層3に配合されたMo(元素Y)の量が実施例1の場
合より多いため、磁性層3の結晶磁気異方性が低下して
最大保磁力の得られるc軸配向性の分布が膜面内方向に
シフトしたためと考えられる。
When the magnetic characteristics of this magnetic recording medium were measured, the coercive force Hc was 1600 (Oe) and the squareness ratio Br / Bs.
Was 0.85. Compared with the values of Example 1, Hc
However, the squareness ratio is improved. This is because the amount of Mo (element Y) compounded in the magnetic layer 3 is larger than that in the case of Example 1, so that the crystal magnetic anisotropy of the magnetic layer 3 is decreased and the maximum coercive force is obtained. It is considered that the distribution of is shifted in the in-plane direction of the film.

【0041】次に、磁性層3の組成をCo75Pt9 Cr
6 Mo10に固定して、非磁性下地層2の組成を変化させ
た時の磁気記録媒体の磁気特性を調べ、非磁性下地層C
rX(X=Mo)の元素Xの配合濃度xの関数として図
示したのが、図7である。
Next, the composition of the magnetic layer 3 is changed to Co 75 Pt 9 Cr.
The magnetic characteristics of the magnetic recording medium were investigated when the composition of the non-magnetic underlayer 2 was changed by fixing to 6 Mo 10.
FIG. 7 shows a function of the compounding concentration x of the element X of rX (X = Mo).

【0042】図7を図3と対比すると、磁性層3に配合
された元素Y(Y=Mo)の濃度yが高い分だけ磁性層
3の格子定数が大きくなり、したがってHcのピークを
与える非磁性下地層2の元素Xの配合濃度xが、より高
濃度にシフトしていることがわかる。換言すれば、下地
層より磁性層の格子定数が大きく引張り歪を磁性層に与
える領域が広がったとも云える。x=30原子%付近で
格子歪がもっとも小さい状態となってHcがピーク値を
示す。この前後のxに関する組成領域が、実施例1で述
べたc軸配向分布の遷移領域に該当する。しかし前記し
たようにxが最適値付近に選択されても、磁性層3中に
配合された非磁性元素Yの濃度yが高いために保磁力H
cのピーク値そのものは実施例1の場合よりも相対的に
小さな値を示す。
Comparing FIG. 7 with FIG. 3, the lattice constant of the magnetic layer 3 increases as the concentration y of the element Y (Y = Mo) compounded in the magnetic layer 3 increases, and therefore the peak of Hc is not given. It can be seen that the compounding concentration x of the element X in the magnetic underlayer 2 is shifted to a higher concentration. In other words, it can be said that the lattice constant of the magnetic layer is larger than that of the underlayer, and the region that gives tensile strain to the magnetic layer is expanded. Hc shows a peak value when the lattice strain becomes the smallest in the vicinity of x = 30 atomic%. The composition region for x before and after this corresponds to the transition region of the c-axis orientation distribution described in Example 1. However, as described above, even if x is selected near the optimum value, the coercive force H is high because the concentration y of the non-magnetic element Y mixed in the magnetic layer 3 is high.
The peak value of c itself is relatively smaller than that in the first embodiment.

【0043】(実施例3)磁性層の組成をCo72Pt16
Cr8 Mo4 、非磁性下地層の組成をCr80Mo20とし
た以外は実施例1〜2と同様にして磁気記録媒体を得
た。得られた磁気記録媒体の保持力および角形比は表2
に示すように、それぞれ2050(Oe)、0.71で
あり、優れた値を示した。
Example 3 The composition of the magnetic layer was changed to Co 72 Pt 16
Magnetic recording media were obtained in the same manner as in Examples 1 and 2 except that Cr 8 Mo 4 and the composition of the nonmagnetic underlayer were Cr 80 Mo 20 . Table 2 shows the coercive force and squareness of the obtained magnetic recording medium.
As shown in Table 1, the values were 2050 (Oe) and 0.71, respectively, which were excellent values.

【0044】(実施例4〜10)実施例1,2と同様に
して100〜400℃の範囲で基板加熱を行ないながら
連続スパッタリングと潤滑層塗布によって異なる組成を
有する非磁性下地層2と磁性層3を組合せた磁気記録媒
体を形成し、その磁気特性と共に表示したのが、表2で
ある。表2に記載した実施例4では元素XおよびYとし
てNbを配合し、実施例5ではXおよびYがAl、実施
例6ではXおよびYがTa、実施例7ではXがMoTa
合金、YがTa、実施例8ではXおよびYがZr、実施
例9ではXがMoZr合金、YがZr、実施例10では
XおよびYがMoZr合金となっている。また、本発明
の各実施例と磁気特性を比較するために、比較例4〜7
の磁気記録媒体も作成し、表2中に併せて示した。
(Examples 4 to 10) Non-magnetic underlayer 2 and magnetic layer having different compositions by continuous sputtering and coating of the lubricating layer while heating the substrate in the range of 100 to 400 ° C in the same manner as in Examples 1 and 2. Table 2 shows a magnetic recording medium in which No. 3 is combined and the magnetic characteristics are shown together. In Example 4 listed in Table 2, Nb is blended as the elements X and Y, in Example 5 X and Y are Al, in Example 6 X and Y are Ta, and in Example 7, X is MoTa.
Alloy, Y is Ta, X and Y are Zr in Example 8, X is MoZr alloy in Example 9, Y is Zr, and X and Y are MoZr alloy in Example 10. Further, in order to compare the magnetic characteristics with the respective examples of the present invention, Comparative Examples 4 to 7
The magnetic recording medium of was also prepared and shown in Table 2 together.

【0045】表2から明らかなように、非磁性下地層の
主成分のCrより原子半径の大きな非磁性元素Xおよび
磁性層の主成分であるCoより原子半径の大きな非磁性
元素Yの適量配合によって非磁性下地層と磁性層の格子
定数を調整することが可能となる。その結果、磁性層粒
子のc軸配向分布を適切に制御することができ、従来よ
り低い白金配合比で高い保持力と角形比をもつ磁気記録
媒体の製造が可能であることが示された。
As is clear from Table 2, a suitable amount of the nonmagnetic element X having a larger atomic radius than Cr as the main component of the nonmagnetic underlayer and the nonmagnetic element Y having a larger atomic radius than Co as the main component of the magnetic layer is mixed. This makes it possible to adjust the lattice constants of the non-magnetic underlayer and the magnetic layer. As a result, it was shown that the c-axis orientation distribution of the magnetic layer particles can be appropriately controlled, and a magnetic recording medium having a high coercive force and a squareness ratio can be manufactured with a platinum compounding ratio lower than conventional ones.

【0046】[0046]

【表2】 [Table 2]

【0047】なお、表2に記載した元素以外にもXおよ
び/又はYとしてTi,V,HfおよびWのうち少なく
とも1種類を用いることが適当であることも明らかとな
っている。
It has been clarified that it is appropriate to use at least one of Ti, V, Hf and W as X and / or Y in addition to the elements shown in Table 2.

【0048】以上実施例により本発明を説明したが、本
発明はこれらの実施例に限定されるものではなく、以下
のような応用例や変形例を含むものである。前記実施例
では非磁性基板としてガラスディスク(非晶質)を用い
たが、この他にも結晶化ガラス、アルミニウム合金、セ
ラミックス、プラスチック、カーボンや適当な無機素材
を用いることがでる。
Although the present invention has been described with reference to the embodiments, the present invention is not limited to these embodiments and includes the following application examples and modifications. Although a glass disk (amorphous) was used as the non-magnetic substrate in the above-mentioned examples, other than this, crystallized glass, aluminum alloy, ceramics, plastic, carbon, or a suitable inorganic material can be used.

【0049】また上記材料から成る非磁性基板と非磁性
下地層との間に、Cr,Mo,W,Ti,Zr,V,N
b,Ta,Mg,Bi等の金属やこれらの合金、或いは
SiO2 やAl2 3 などの酸化物からなる非磁性バッ
ファ層を更に設けることが可能である。このバッファ層
は非磁性下地層の粒子成長や配向性を助長するなどの役
割をもつ。
Further, Cr, Mo, W, Ti, Zr, V and N are provided between the non-magnetic substrate and the non-magnetic underlayer made of the above materials.
It is possible to further provide a non-magnetic buffer layer made of a metal such as b, Ta, Mg, or Bi, an alloy thereof, or an oxide such as SiO 2 or Al 2 O 3 . This buffer layer plays a role of promoting grain growth and orientation of the nonmagnetic underlayer.

【0050】さらに前記実施例では、カーボンを保護層
に用いたが、これ以外にもたとえばSiO2 、Zr
2 ,Si3 4 ,BN,Cr,CrMo合金等を用い
ることができる。さらに前記実施例では、パフロロポリ
エーテルを潤滑層に用いたが、これ以外にも、たとえば
脂肪酸、脂肪酸アミド、脂肪酸エステル、フロロカーボ
ン等を単独で或いは混合して用いることができる。
Further, although carbon is used for the protective layer in the above-mentioned embodiment, other than this, for example, SiO 2 and Zr are used.
O 2 , Si 3 B 4 , BN, Cr, CrMo alloy or the like can be used. Further, in the above-mentioned embodiment, although pafluoropolyether was used for the lubricating layer, other than this, for example, fatty acid, fatty acid amide, fatty acid ester, fluorocarbon or the like can be used alone or in combination.

【0051】[0051]

【発明の効果】以上説明したように、本発明によれば、
Cr系合金下地上に積層したCo系合金磁性層の保磁力
と角形比を高価なPt成分を増すことなく高めることが
可能である。この結果、使用目的にあわせて磁気特性を
制御した磁気記録媒体を提供することができる。
As described above, according to the present invention,
It is possible to increase the coercive force and squareness of the Co-based alloy magnetic layer laminated on the Cr-based alloy underlayer without increasing the expensive Pt component. As a result, it is possible to provide a magnetic recording medium whose magnetic characteristics are controlled according to the purpose of use.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例における磁気記録媒体の積層構造を示す
図である。
FIG. 1 is a diagram showing a laminated structure of a magnetic recording medium in an example.

【図2】比較例における磁気特性の元素X(=Mo)の
配合濃度x依存性を示す図である。
FIG. 2 is a diagram showing the dependence of the magnetic characteristic in the comparative example on the compounding concentration x of the element X (= Mo).

【図3】比較例における磁気特性の元素X(=Mo)の
配合濃度x依存性を示す図である。
FIG. 3 is a diagram showing the dependence of the magnetic characteristics of the comparative example on the compounding concentration x of the element X (= Mo).

【図4】図2に示した比較例における磁性層粒子のc軸
配向分布を示す図である。
4 is a diagram showing a c-axis orientation distribution of magnetic layer particles in the comparative example shown in FIG.

【図5】図3に示した実施例における磁性層粒子のc軸
配向分布を示す図である。
5 is a diagram showing a c-axis orientation distribution of magnetic layer particles in the example shown in FIG.

【図6】図5の中央の図における組成を有する実施例
(実施例1)の成膜時基板温度と保磁力の関係を示す図
である。
FIG. 6 is a diagram showing the relationship between the substrate temperature during film formation and the coercive force of an example (Example 1) having the composition shown in the center of FIG.

【図7】別の実施例における元素X(=Mo)濃度xと
磁性特性との関係を示す図である。
FIG. 7 is a diagram showing a relationship between an element X (= Mo) concentration x and magnetic properties in another example.

【符号の説明】[Explanation of symbols]

1 非磁性基板 2 非磁性下地層(CrX) 3 磁性層(CoPtCrY) 4 保護層 5 潤滑層 6 磁気記録媒体 1 Nonmagnetic Substrate 2 Nonmagnetic Underlayer (CrX) 3 Magnetic Layer (CoPtCrY) 4 Protective Layer 5 Lubricating Layer 6 Magnetic Recording Medium

フロントページの続き (72)発明者 堀川 順一 東京都新宿区中落合2丁目7番5号 ホー ヤ株式会社内Front page continuation (72) Inventor Junichi Horikawa 2-7-5 Nakaochiai, Shinjuku-ku, Tokyo Hoya Co., Ltd.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 非磁性基板上に少なくとも(1)Crお
よびCrより原子半径の大きな非磁性元素Xを含む非磁
性下地層と、(2)CoおよびCoより原子半径の大き
な非磁性元素Yを含む磁性層と、をこの順で積層して成
り、 前記磁性層を構成する磁性粒子のc軸配向分布が、前記
非磁性下地層に含まれる前記元素Xの配合濃度xの関数
であり、xが増大するにつれて前記磁性層膜面に垂直配
向型から当該膜面内配向型へと移行するc軸配向遷移領
域を有するように前記元素Yの配合濃度yおよび前記x
を選択することを特徴とする磁気記録媒体。
1. A nonmagnetic underlayer containing at least (1) Cr and a nonmagnetic element X having a larger atomic radius than Cr and (2) Co and a nonmagnetic element Y having a larger atomic radius than Co on a nonmagnetic substrate. And a magnetic layer containing a magnetic layer, which is laminated in this order, and the c-axis orientation distribution of the magnetic particles forming the magnetic layer is a function of the compounding concentration x of the element X contained in the nonmagnetic underlayer, and x And the x concentration of the element Y so that the magnetic layer film surface has a c-axis orientation transition region that shifts from the vertical orientation type to the in-plane orientation type.
A magnetic recording medium characterized by selecting.
【請求項2】 前記yを所定値に選んだとき、前記c軸
配向分布が前記c軸配向遷移領域に入るように前記xを
選択することを特徴とする請求項1記載の磁気記録媒
体。
2. The magnetic recording medium according to claim 1, wherein when the y is selected as a predetermined value, the x is selected so that the c-axis orientation distribution falls within the c-axis orientation transition region.
【請求項3】 前記磁性層がさらにPtおよびCrを含
む請求項1記載の磁気記録媒体。
3. The magnetic recording medium according to claim 1, wherein the magnetic layer further contains Pt and Cr.
【請求項4】 前記元素Xが、Mo,Al,Ti,Z
r,Nb,Hf,TaおよびWから成る群より選ばれた
少なくとも1種類である請求項1記載の磁気記録媒体。
4. The element X is Mo, Al, Ti, Z.
The magnetic recording medium according to claim 1, wherein the magnetic recording medium is at least one selected from the group consisting of r, Nb, Hf, Ta and W.
【請求項5】 前記元素Yが、Mo,Al,V,Zr,
Nb,Hf,TaおよびWから成る群より選ばれた少な
くとも1種類である請求項1記載の磁気記録媒体。
5. The element Y is Mo, Al, V, Zr,
The magnetic recording medium according to claim 1, wherein the magnetic recording medium is at least one selected from the group consisting of Nb, Hf, Ta and W.
【請求項6】 前記非磁性下地層中のCrの含有量が4
0原子%以上100原子%未満であり、前記磁性層中の
Coの含有量が60原子%以上90原子%以下である請
求項1記載の磁気記録媒体。
6. The content of Cr in the non-magnetic underlayer is 4
The magnetic recording medium according to claim 1, wherein the content of Co in the magnetic layer is 0 atomic% or more and less than 100 atomic%, and the Co content in the magnetic layer is 60 atomic% or more and 90 atomic% or less.
【請求項7】 前記磁性層中のPtの含有量が4原子%
以上20原子%以下であり、Crの含有量が2原子%以
上16原子%以下である請求項3記載の磁気記録媒体。
7. The Pt content in the magnetic layer is 4 atomic%.
The magnetic recording medium according to claim 3, wherein the content is not less than 20 atomic% and not more than 20 atomic%, and the content of Cr is not less than 2 atomic% and not more than 16 atomic%.
【請求項8】 前記元素Xの含有量が60原子%以下で
あり、また前記元素Yの含有量が20原子%以下である
請求項1記載の磁気記録媒体。
8. The magnetic recording medium according to claim 1, wherein the content of the element X is 60 atomic% or less, and the content of the element Y is 20 atomic% or less.
JP17426893A 1993-07-14 1993-07-14 Magnetic recording medium Pending JPH0729144A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17426893A JPH0729144A (en) 1993-07-14 1993-07-14 Magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17426893A JPH0729144A (en) 1993-07-14 1993-07-14 Magnetic recording medium

Publications (1)

Publication Number Publication Date
JPH0729144A true JPH0729144A (en) 1995-01-31

Family

ID=15975684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17426893A Pending JPH0729144A (en) 1993-07-14 1993-07-14 Magnetic recording medium

Country Status (1)

Country Link
JP (1) JPH0729144A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100703169B1 (en) * 2004-08-26 2007-04-05 여환동 Insulation, waterproof structure and construction method of building

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100703169B1 (en) * 2004-08-26 2007-04-05 여환동 Insulation, waterproof structure and construction method of building

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