JPH0730343A - 分布型増幅器及び双方向増幅器 - Google Patents

分布型増幅器及び双方向増幅器

Info

Publication number
JPH0730343A
JPH0730343A JP5173907A JP17390793A JPH0730343A JP H0730343 A JPH0730343 A JP H0730343A JP 5173907 A JP5173907 A JP 5173907A JP 17390793 A JP17390793 A JP 17390793A JP H0730343 A JPH0730343 A JP H0730343A
Authority
JP
Japan
Prior art keywords
distributed
side circuit
fet
input
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5173907A
Other languages
English (en)
Japanese (ja)
Inventor
Kazuhiko Nakahara
和彦 中原
Yoshinobu Sasaki
善伸 佐々木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5173907A priority Critical patent/JPH0730343A/ja
Priority to US08/258,831 priority patent/US5414387A/en
Priority to EP94109213A priority patent/EP0634836A3/de
Publication of JPH0730343A publication Critical patent/JPH0730343A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
JP5173907A 1993-07-14 1993-07-14 分布型増幅器及び双方向増幅器 Pending JPH0730343A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5173907A JPH0730343A (ja) 1993-07-14 1993-07-14 分布型増幅器及び双方向増幅器
US08/258,831 US5414387A (en) 1993-07-14 1994-06-13 Distributed amplifier and bidirectional amplifier
EP94109213A EP0634836A3 (de) 1993-07-14 1994-06-15 Kettenverstärker und Zweirichtungsverstärker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5173907A JPH0730343A (ja) 1993-07-14 1993-07-14 分布型増幅器及び双方向増幅器

Publications (1)

Publication Number Publication Date
JPH0730343A true JPH0730343A (ja) 1995-01-31

Family

ID=15969297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5173907A Pending JPH0730343A (ja) 1993-07-14 1993-07-14 分布型増幅器及び双方向増幅器

Country Status (3)

Country Link
US (1) US5414387A (de)
EP (1) EP0634836A3 (de)
JP (1) JPH0730343A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2239942A1 (de) * 1972-08-14 1974-03-07 Wacker Chemie Gmbh Verfahren zur polymerisation von vinylchlorid
JP5200541B2 (ja) * 2005-10-24 2013-06-05 日本電気株式会社 分布型増幅器、集積回路および送受信器
JP7625154B1 (ja) * 2024-04-24 2025-01-31 三菱電機株式会社 分布型増幅器

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6049250A (en) * 1998-04-03 2000-04-11 Trw Inc. Dittributed feed back distributed amplifier
US6008694A (en) * 1998-07-10 1999-12-28 National Scientific Corp. Distributed amplifier and method therefor
JP3951495B2 (ja) 1999-03-18 2007-08-01 株式会社日立製作所 進行波型電力合成回路及び無線基地局
US6377125B1 (en) * 2001-03-15 2002-04-23 Motorola.Inc. Distributed amplifier having separately biased sections
GB2373937A (en) * 2001-03-27 2002-10-02 Secr Defence Improvements in travelling wave amplifiers
US6650200B2 (en) * 2001-04-20 2003-11-18 Anaren Microwave, Inc. Dynamic combiner/splitter for RF signal systems
WO2003065572A1 (en) * 2002-01-25 2003-08-07 Centellax, Inc. Distributed level-shifting network for cascading broadband amplifiers
US7239852B2 (en) * 2003-08-01 2007-07-03 Northrop Grumman Corporation Asymmetric, optimized common-source bi-directional amplifier
US8669812B2 (en) * 2004-11-23 2014-03-11 Schilmass Co., L.L.C. High power amplifier
US8076975B1 (en) 2004-11-23 2011-12-13 Bae Systems Information And Electronic Systems Integration Inc. Broadband high power amplifier
US8035449B1 (en) * 2009-01-02 2011-10-11 Rf Micro Devices, Inc. Capacitively-coupled distributed amplifier with baseband performance
JP5764742B2 (ja) * 2010-05-17 2015-08-19 パナソニックＩｐマネジメント株式会社 接合型電界効果トランジスタ、その製造方法及びアナログ回路
US8665022B2 (en) 2011-04-28 2014-03-04 Rf Micro Devices, Inc. Low noise-linear power distributed amplifier
US8823455B2 (en) 2011-09-13 2014-09-02 Rf Micro Devices, Inc. Matrix distributed power amplifier
US9093420B2 (en) 2012-04-18 2015-07-28 Rf Micro Devices, Inc. Methods for fabricating high voltage field effect transistor finger terminations
US9124221B2 (en) 2012-07-16 2015-09-01 Rf Micro Devices, Inc. Wide bandwidth radio frequency amplier having dual gate transistors
US9202874B2 (en) 2012-08-24 2015-12-01 Rf Micro Devices, Inc. Gallium nitride (GaN) device with leakage current-based over-voltage protection
US9147632B2 (en) 2012-08-24 2015-09-29 Rf Micro Devices, Inc. Semiconductor device having improved heat dissipation
US9142620B2 (en) 2012-08-24 2015-09-22 Rf Micro Devices, Inc. Power device packaging having backmetals couple the plurality of bond pads to the die backside
US8988097B2 (en) 2012-08-24 2015-03-24 Rf Micro Devices, Inc. Method for on-wafer high voltage testing of semiconductor devices
US9917080B2 (en) 2012-08-24 2018-03-13 Qorvo US. Inc. Semiconductor device with electrical overstress (EOS) protection
US9070761B2 (en) 2012-08-27 2015-06-30 Rf Micro Devices, Inc. Field effect transistor (FET) having fingers with rippled edges
WO2014035794A1 (en) 2012-08-27 2014-03-06 Rf Micro Devices, Inc Lateral semiconductor device with vertical breakdown region
US9325281B2 (en) 2012-10-30 2016-04-26 Rf Micro Devices, Inc. Power amplifier controller
US9455327B2 (en) 2014-06-06 2016-09-27 Qorvo Us, Inc. Schottky gated transistor with interfacial layer
US9536803B2 (en) 2014-09-05 2017-01-03 Qorvo Us, Inc. Integrated power module with improved isolation and thermal conductivity
US10615158B2 (en) 2015-02-04 2020-04-07 Qorvo Us, Inc. Transition frequency multiplier semiconductor device
US10062684B2 (en) 2015-02-04 2018-08-28 Qorvo Us, Inc. Transition frequency multiplier semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918401A (en) * 1985-09-30 1990-04-17 Siemens Aktiengesellschaft Step adjustable distributed amplifier network structure
US5081706A (en) * 1987-07-30 1992-01-14 Texas Instruments Incorporated Broadband merged switch
JPH01205458A (ja) * 1988-02-10 1989-08-17 Matsushita Electron Corp モノリシックマイクロ波集積回路
US4973918A (en) * 1988-12-27 1990-11-27 Raytheon Company Distributed amplifying switch/r.f. signal splitter
US4983865A (en) * 1989-01-25 1991-01-08 Pacific Monolithics High speed switch matrix
JPH0349401A (ja) * 1989-07-18 1991-03-04 Mitsubishi Electric Corp マイクロ波素子
US5046155A (en) * 1990-04-06 1991-09-03 Wisconsin Alumni Research Foundation Highly directive, broadband, bidirectional distributed amplifier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2239942A1 (de) * 1972-08-14 1974-03-07 Wacker Chemie Gmbh Verfahren zur polymerisation von vinylchlorid
JP5200541B2 (ja) * 2005-10-24 2013-06-05 日本電気株式会社 分布型増幅器、集積回路および送受信器
JP7625154B1 (ja) * 2024-04-24 2025-01-31 三菱電機株式会社 分布型増幅器

Also Published As

Publication number Publication date
US5414387A (en) 1995-05-09
EP0634836A2 (de) 1995-01-18
EP0634836A3 (de) 1997-11-19

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