JPH0732209B2 - Ceramic container for semiconductor device - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a ceramic container for a semiconductor device, and particularly to a structure having a hollow portion in which a semiconductor element is housed and then hermetically sealed with a lid member. The present invention relates to a ceramic container for a semiconductor device.

[Conventional technology]

Conventionally, as shown in FIGS. 3A and 3B, a ceramic container for a semiconductor device of this type has a metal wiring layer 2 for mounting a semiconductor element and leading an electrode of the semiconductor element to the outside. On the ceramic substrate 1 provided, a ceramic frame 3a having a hollow central portion and a lid metallizing layer 5 for attaching a lid member to the upper surface is stacked and integrally fired, for connecting an external circuit. After attaching the lead-out terminal 4 of Fig. 1 by using a brazing material, it is easy to fix the semiconductor element and to bond the thin metal wire for electrically connecting the electrode of the semiconductor element and the metal wiring layer 2, and to easily attach the lid member. In order to do so, each surface of the metal wiring layer 2, the lid metallization layer 5 and the lead-out terminal 4 is
The structure was such that the two-layer wiring plating layer 7 of Ni and Au and the lid plating layer 8 were formed by coating by electroplating or the like.

[Problems to be Solved by the Invention]

However, in the above-described conventional ceramic container for a semiconductor device, the metal wiring layer 2 on the ceramic substrate 1 and the lead-out terminal 4 electrically connected to the metal wiring layer 2 are Ni and Ni by electroplating using the lead-out terminal 4. The Au wiring plating layer 7 can be easily formed by coating, but since the lid metallization layer 5 provided on the ceramic frame 3a is electrically insulated from the lead-out terminal 4, electroplating is performed. At this time, by connecting to the lead-out terminal 4 with a metal wire, or by bringing a needle-shaped conductive pin provided on the plating jig into contact with the lid metallized layer 5 to establish electrical conduction, And the lid plating layer 8 of Au is formed by coating.

For this reason, it is difficult to electrically connect the lid metallization layer 5 on the ceramic frame 3a during electroplating, resulting in poor workability and high cost, as well as contact with metal wires or conductive pins. When the contact portion with the lid metallized layer 5 is not covered with plating and the contact with the metal wire or the conduction pin is loosened, a poorly adhered plating layer is formed or the thickness is uneven. In any case, when the lid member is hermetically sealed using the low melting point brazing filler metal, the brazing filler metal is poorly wetted and causes poor airtightness, or the plating layer peels off and the lid member falls off. There was a drawback in terms of reliability and quality.

An object of the present invention is to provide a ceramic container for a semiconductor device, which has improved workability, is inexpensive, can prevent airtightness and the lid member from falling off, and can improve reliability quality.

[Means for Solving the Problems]

A ceramic container for a semiconductor device of the present invention is a ceramic substrate for mounting a semiconductor element in a central portion, and a metal for connecting to an electrode of the semiconductor element formed from the central portion to the peripheral portion on the ceramic substrate. A wiring layer, a ceramic frame body having a hollow portion for accommodating the semiconductor element in the center on the ceramic substrate and integrally formed with the ceramic substrate, and the metal wiring layer is connected to the outside of the ceramic frame body. A lead terminal for connecting an external circuit, a lid metallization layer formed on the upper surface of the ceramic frame for attaching a lid member, connected to the lid metallization layer, and insulated from the metal wiring layer and the lead terminal. And a lid plating metallization layer formed from the ceramic frame to the peripheral portion of the ceramic substrate and led out of the ceramic frame, and the lid. The metal wiring layer metallization layer and the leading terminals use the Ki Tsu as an electrode, and a lead-out terminal and plating layer formed on the surface of the lid portion metallization layer.

Further, outside the periphery of the ceramic substrate, the lead terminal and the lid are commonly connected to the plating metallization layer, and after forming a plating layer on each surface of the metal wiring layer, the lead terminal and the lid metallization layer, the lead terminal and the lid. It has a structure in which a plating metallization layer and a plating lead electrode to be cut are provided.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings.

1 (a) and 1 (b) are a plan view and an AA 'sectional view showing a first embodiment of the present invention, respectively.

In this embodiment, a ceramic substrate 1 for mounting a semiconductor element in the central portion thereof, and a metal wiring layer 2 for connecting to the electrodes of the semiconductor element, which is formed from the central portion to the peripheral portion of the ceramic substrate 1. A ceramic frame body 3 having an aerial portion for accommodating semiconductor elements in the center on the ceramic substrate 1 and integrally fired with the ceramic substrate 1, and a metal wiring layer 2 and a brazing material on the outside of the ceramic frame body 3. External circuit connection lead-out terminal 4 to be connected by means of, and lid metallization layer 5 formed on the top of ceramic frame 3 for attaching a lid member.
And is connected to the lid metallization layer 5 and insulated from the metal wiring layer 22 and the lead-out terminal 4, is formed from the side surface of the ceramic frame 3 to the peripheral portion of the ceramic substrate 1, and is led out of the ceramic frame 3. The metallized layer 6 for plating the lid,
On the surface of the metal plating layer 7 and the lid metallization layer 5 formed on each surface of the metal wiring layer 2 and the lead-out terminal 4 by electroplating with the metallization layer 6 for lid plating and the lead-out terminal 4 as electrodes. The lid plating layer 8 thus formed is provided.

Therefore, the metallization layer 6 for plating the lid can be used as an electrode for electroplating the surface without touching the metallization 5 for the lid, and the plating layer can be formed uniformly and reliably with good workability. As a result, the lid member adheres well, and poor airtightness can be prevented.

FIG. 2 is a plan view of a ceramic container for a semiconductor device in an intermediate step of the second embodiment of the present invention.

In this embodiment, outside the periphery of the ceramic substrate 1,
A lead electrode 9 for plating, which is integrally formed of the same material as the lead-out terminal 4 connected to the metal wiring layer 2 and connected to the metallization layer 6 for lid plating, is provided, and the lead electrode 9 for plating is used as an electrode for electroplating. After forming a plating layer on each surface of the metal wiring layer 2, lead-out terminal 4 and lid metallization layer 5 by
It is configured to be cut at the part.

Therefore, there is an advantage that connection of electrodes for electroplating becomes extremely easy.

〔The invention's effect〕

INDUSTRIAL APPLICABILITY As described above, the present invention provides a lid plating metallization layer which is connected to the lid metallization layer provided on the upper surface of the ceramic frame body and is led out to the outside of the ceramic frame body. By forming the plating layer on the surface of the lid metallization layer as an electrode, it is possible to reliably connect to the electrode for electroplating without touching the lid metallization layer. A ceramic container for a semiconductor device that can form a plating layer with good adhesion and uniform thickness over the entire surface of the device with good workability, prevent airtightness and falling of the lid member, and be inexpensive and have excellent reliability quality. There is an effect that can be obtained.

Further, by providing the lead electrode for plating which is connected to the lead-out terminal 4 and the metallized layer for plating the lid, workability can be further improved.

[Brief description of drawings]

1 (a) and 1 (b) are a plan view and a sectional view taken along the line AA 'of the first embodiment of the present invention, respectively, and FIG. 2 is a semiconductor device in an intermediate step of the second embodiment of the present invention. 3A and 3B are plan views of a conventional ceramic container for a semiconductor device and FIG. 3A and FIG.
It is an A'cross section figure. DESCRIPTION OF SYMBOLS 1 ... Ceramic substrate, 2 ... Metal wiring layer, 3, 3a ... Ceramic frame, 4 ... Derivation terminal, 5 ... Lid metallization layer, 6 ... Lid plating metallization layer, 7 ... Wiring plating layer, 8 ... Lid plating layer, 9 ... Lead electrode for plating, 10 ... Cutting line.

Claims (2)

[Claims] 1. A ceramic substrate on which a semiconductor element is mounted in the central portion, a metal wiring layer formed from the central portion to the peripheral portion of the ceramic substrate for connecting to an electrode of the semiconductor element, and the ceramic. A ceramic frame body integrally formed with the ceramic substrate having a hollow portion for accommodating the semiconductor element on the substrate, and an external circuit connecting outside the ceramic frame body to the metal wiring layer. A lead terminal, a lid metallization layer formed on the upper surface of the ceramic frame for attaching a lid member, connected to the lid metallization layer, and insulated from the metal wiring layer and the lead terminal, and the ceramic frame A metallization layer for plating the lid, which is formed from the body to the periphery of the ceramic substrate and is led out to the outside of the ceramic frame, and the metallization layer for plating the lid and the conductor. The metal wiring layer terminal as an electrode,
A ceramic container for a semiconductor device, comprising: a lead-out terminal and a plating layer formed on each surface of the lid metallization layer. 2. A lead-out terminal after forming a plating layer on each surface of the metal wiring layer, the lead-out terminal and the lid-portion metallization layer on the outside of the periphery of the ceramic substrate in common connection with the lead-out terminal and the lid-plating metallization layer. The ceramic container for a semiconductor device according to claim 1, further comprising a metallizing layer for plating the lid and a lead electrode for plating that is cut.