JPH073848B2 - Semiconductor device - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a semiconductor device, and is suitable for use in a transistor for high output power and a semiconductor integrated circuit that require particularly good heat dissipation effect.

[Background technology]

Taking the transistor for high output power as an example, it is no exaggeration to say that the output power is determined by whether or not the heat dissipation effect is good. Therefore, although various proposals have been made for the heat sink of the semiconductor device, the present inventors have various technical studies in consideration of heat dissipation of the output transistor whose output power is, for example, 1 W or more. The
The present invention has been completed.

In addition, Japanese Patent Laid-Open No. 177548/1982 proposes a heat dissipation plate.

[Object of the Invention]

An object of the present invention is to provide a semiconductor device that can achieve a good heat dissipation effect by utilizing external connection terminals.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[Outline of Invention]

To briefly describe the outline of the invention disclosed in the present application,
It is as follows.

That is, each of a plurality of predetermined external connection terminals having a plurality of external connection terminals bent downward from the package side portion and connected to the tab to which the semiconductor chip is attached is exposed to the outside of the package. A heat dissipation plate wider than the width of the external connection terminal is integrally provided, and both sides of the heat dissipation plate are bent outward, thereby achieving the object of the present invention to improve the heat dissipation effect.

Next, an example of a semiconductor device made prior to the present invention will be described with reference to FIGS. In this embodiment, an application example to a high output power transistor will be described.

First, regarding the structure of the frame in FIG.
Is a tab, and the semiconductor chip 2 shown by a dotted line is provided on the upper surface thereof. The semiconductor chip 2 is large in size as shown by the dotted line for high output power, but is small in shape for small output power. The tab 1 is integrated with the collector external connection terminal 3, and the two collector external connection terminals 3 and 3 are integrally formed with a heat dissipation plate 4.

What should be noted here is the size of the heat dissipation plate 4.

That is, both sides of the heat dissipation plate 4 are larger than the external connection terminal 3 for collector by the width W, and therefore larger than the length 1 between the two terminals. The surface area of the heat dissipation plate 4 increases as the size of the heat dissipation plate 4 increases, and the heat dissipation effect improves.

In addition, 5 is an external connection terminal which becomes an emitter terminal, and 6
Is an external connection terminal serving as a base.

Then, in the external connection terminals 3, 5, and 6, groove portions 7, 8, and 9 are formed in the portions that engage with the package 21, which will be described later.
Further, since the lead frame is provided with the space portion 10, the upper and lower parts of the resin, which becomes a package, are improved to reduce the intrusion of water and improve the moisture-proof effect. Further, the cutouts 11 and 12 formed in the external connection terminals 5 and 6 are for preventing the external connection terminals 5 and 6 from coming off,
Bonding pads (not shown) formed on the semiconductor chip 2 and the external connection terminals 5, 6 are connected by wire bonding 13, 14 as shown in FIG.

Then, it is molded with resin or the like from the state shown in FIG. 2 to form the package 21 as shown in FIG.

According to the transistor having the above structure, the heat dissipation effect is extremely good, and the transistor can be sufficiently used in an electronic circuit that requires an output power of 1 W or more. Also, the groove portion 7,8,
Providing 9 lengthens the path for moisture to penetrate into the package 21 through the external connection terminals 3, 5, 6 and improves moisture resistance.

〔Example〕

Next, a concrete embodiment of the present invention will be described with reference to FIG. The same parts as those described above and shown in FIGS. 1 to 3 are designated by the same reference numerals to avoid redundant description.

As shown in FIG. 4, the two external connection terminals 3 are individually provided with heat radiating plates 4a and 4b, which are each bent outward. As a result, the contact state between the heat dissipation plate 4 and the outside air can be improved, so that the heat dissipation effect can be improved as compared with the semiconductor device made prior to the present invention. Further, since the mechanical strength of the external connection terminal 3 can be improved, the deformation of the external connection terminal 3 at the time of mounting can be suppressed, and the work efficiency at the time of mounting can be improved. The heat radiating plates 4a and 4b are cut at the position of the dotted line A in FIG. 1 and then bent. However, in this embodiment, the width W is wider than the width of the heat dissipation plate portion on the side of the dotted line A, and as shown in FIG. The heat sink is wider. This allows
It is possible to improve the heat dissipation efficiency. This structure does not simply provide a heat radiating plate on the external connection terminal, but bends both sides of the heat radiating plate of each terminal to the outside as shown in FIG. By forming the air in the atmosphere to flow along the extending direction of the external connection terminal, that is, to form the air flow path so that the air is most in contact with the external connection terminal,
This has the effect of further improving the heat dissipation effect.

The heat sinks 4a and 4b have a bent structure to prevent contact between the heat sinks and the heat sinks, that is, accidental contact between the collectors and the collectors when the transistors having the same structure are mounted adjacent to each other. You can

〔effect〕

(1) The external connection terminal of the semiconductor device is integrally formed with a heat dissipation plate wider than the width of the semiconductor device, and both sides of the heat dissipation plate are bent outward so that the external connection terminal is in good contact with the outside air. Since the semiconductor chip is efficiently radiated, the semiconductor device can be driven with a large output power.

(2) By providing the external connection terminal with the heat dissipation plate having the bent structure, the mechanical strength of the external connection terminal is increased, undesired deformation of the external connection terminal is reduced, and the work efficiency at the time of mounting is improved.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments and can be variously modified without departing from the scope of the invention. Nor.

For example, based on the heat dissipation plates 4a and 4b as shown in the second embodiment,
You may provide in the external connection terminal for emitters.

[Field of Application] In the above description, the inventions mainly made by the present inventor are the fields of application, which are the fields of application behind the invention.
However, the present invention is not limited thereto.

For example, it can be used for a hybrid IC.

[Brief description of drawings]

FIG. 1 is a plan view of a frame applied to the present invention, FIG. 2 is a perspective view showing a relationship between the frame and a semiconductor chip, and FIG. 3 is an example of a semiconductor device made prior to the present invention. FIG. 4 is an external view of a semiconductor device showing an embodiment of the present invention. 1 ... tab, 2 ... semiconductor chip, 3,5,6,31 ... external connection terminals, 4,4a, 4b, 32 ... heat sink, l ... length, W ... width, 21 ... package.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Tetsuro Iijima 111 Nishiyokote-cho, Takasaki-shi, Gunma Hitachi Takasaki Plant (56) References JP-A-57-177548 (JP, A) JP-A-52 -111384 (JP, A) Actually opened 58-140647 (JP, U) Actually opened 48-16756 (JP, U)

Claims (2)

[Claims] 1. A plurality of external connection terminals bent downward from a package side portion, of which two predetermined external connection terminals connected to a tab to which a semiconductor chip is attached are provided outside the package. A semiconductor device, characterized in that a heat dissipation plate wider than the width of the exposed external connection terminal is integrally provided, and both sides of the heat dissipation plate are bent outward. 2. The semiconductor device according to claim 1, wherein a groove is formed in a boundary region sealed by the package in the external connection terminal.