JPH0740104B2 - Non-linear resistance element manufacturing method - Google Patents
Non-linear resistance element manufacturing methodInfo
- Publication number
- JPH0740104B2 JPH0740104B2 JP60210617A JP21061785A JPH0740104B2 JP H0740104 B2 JPH0740104 B2 JP H0740104B2 JP 60210617 A JP60210617 A JP 60210617A JP 21061785 A JP21061785 A JP 21061785A JP H0740104 B2 JPH0740104 B2 JP H0740104B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal film
- linear resistance
- resistance element
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は，液晶と組み合わせて画像表示装置を構成する
非線形抵抗素子の製造方法に関する。Description: TECHNICAL FIELD The present invention relates to a method for manufacturing a non-linear resistance element that constitutes an image display device in combination with liquid crystal.
（発明の概要） 本発明は，非線形抵抗素子の製造方法において，非線形
抵抗膜と行または列電極である金属膜をほぼ同一形状に
形成することにより，マスク数を低減し，製造方法が容
易で信頼性を高くしたものである。(Summary of the Invention) According to the present invention, in a method of manufacturing a non-linear resistance element, the number of masks is reduced by forming the non-linear resistance film and the metal film that is a row or column electrode in substantially the same shape, and the manufacturing method is easy. It is highly reliable.
（従来技術） 第５図（ａ）（ｂ）（ｃ）は，従来の非線形抵抗素子の
製造方法を示す断面図を示す。第５図（ａ）は，ガラ
ス，石英等の透明絶縁基板１上に,ITO等の透明導電膜か
ら成る画素電極２を１回目のフオトエツチングにて形成
された断面図を示す。次に第５図（ｂ）に示すように，
非線形抵抗膜３を積層後２回目のフオトエツチングにて
形成する。次に第５図（ｃ）に示すように，行または列
電極となるCr,AI等の金属膜４をスパツタ等で積層して,
3回目のフオトエツチングにて形成している。(Prior Art) FIGS. 5A, 5B, and 5C are sectional views showing a conventional method for manufacturing a nonlinear resistance element. FIG. 5 (a) is a sectional view showing a pixel electrode 2 made of a transparent conductive film such as ITO formed on the transparent insulating substrate 1 made of glass, quartz or the like by the first photo-etching. Next, as shown in FIG. 5 (b),
After the non-linear resistance film 3 is laminated, it is formed by the second photo etching. Next, as shown in FIG. 5 (c), a metal film 4 of Cr, AI, etc., which becomes a row or column electrode, is laminated with a spatter or the like,
It is formed by the third photo etching.
（発明が解決しようとする問題点） 上述したように，非線形抵抗素子を作るのに３回のマス
ク工程を必要としていることと，プロセス工数が多いと
プロセス欠陥が多く発生し歩留りが悪くなる欠点があ
る。(Problems to be Solved by the Invention) As described above, three mask steps are required to form a non-linear resistance element, and if the number of process steps is large, many process defects occur and the yield deteriorates. There is.
（問題点を解決するための手段） 本発明は上記問題点をすみやかに解決するためになされ
たものであり非線形抵抗膜と行または列電極となる金属
膜を連続して積層し，同一のマスク工程にて金属膜と非
線形抵抗膜をほぼ同一形状に選択除去することよりな
る。(Means for Solving the Problems) The present invention has been made in order to solve the above problems promptly, and a non-linear resistance film and a metal film to be a row or column electrode are successively laminated to form the same mask. In the process, the metal film and the non-linear resistance film are selectively removed to have substantially the same shape.
（作用） 上記のように，行または列電極である金属膜と非線形抵
抗膜をほぼ同一形状に選択形成することによつて，マス
ク工程を１回少なくでき，かつ特にフオト工程での欠陥
が少なくなりプロセス歩留りが向上し製造コストの低減
と信頼性の高い非線形抵抗素子ができる。(Operation) As described above, by selectively forming the metal film, which is the row or column electrode, and the non-linear resistance film in substantially the same shape, the mask process can be reduced once, and the defects in the photo process are reduced. The process yield is improved, the manufacturing cost is reduced, and a highly reliable nonlinear resistance element can be obtained.
（実施例） 第１図（ａ）〜（ｅ）は，本発明による非線形抵抗素子
の製造工程順を示す断面図である。ガラス，石英等の透
明絶縁基板１の上に,ITO（インジウム・スズ酸化物）な
どの透明導電膜である画素電極２を１回目のホトマスク
によつて選択的に形成する工程（第１図（ａ）），非線
形抵抗膜３とCr,AI,Au/Cr等の金属膜４を連続して積層
する工程（第１図（ｂ））,2回目のホトマスクによつて
レジスト５をマスクにして金属膜４を選択的に形成する
工程（第１図（ｃ），上記金属膜４と上記レジスト５を
マスクにして非線形抵抗膜３を選択的に形成する工程
（第１図（ｄ））からできている。第１図（ｅ）は，工
程終了後の断面構造図を示し,2回のマスク工程で非線形
抵抗素子ができる。(Embodiment) FIGS. 1A to 1E are sectional views showing a manufacturing process sequence of a nonlinear resistance element according to the present invention. A step of selectively forming a pixel electrode 2 which is a transparent conductive film such as ITO (indium tin oxide) by a first photomask on a transparent insulating substrate 1 such as glass or quartz (see FIG. 1 ( a)), a step of continuously laminating the non-linear resistance film 3 and the metal film 4 of Cr, AI, Au / Cr or the like (FIG. 1 (b)), using the resist 5 as a mask by the second photomask. From the step of selectively forming the metal film 4 (FIG. 1C), the step of selectively forming the nonlinear resistance film 3 using the metal film 4 and the resist 5 as a mask (FIG. 1D) Fig. 1 (e) shows a cross-sectional structure diagram after the process is completed, and a nonlinear resistance element can be formed by two mask processes.
第２図（ａ）〜（ｅ）は，本発明による非線形抵抗素子
の製造工程順を示す断面図の他の例を示す。第２図
（ｃ）の工程までは，第１図（ａ）〜（ｃ）の例と全く
同じであるので詳細を省略する。第２図（ｄ）は，レジ
スト５をマスクにして金属膜４を選択的に形成した後，
例えばクリーンオーブにおいて,160℃−30分間熱処理し
て，レジスト５の端部が金属膜４の端部より外側まで拡
がつて断面図を示す。第２図（ｅ）は，レジスト５をマ
スクにして非線形抵抗素子３を選択的に形成した断面図
を示す。最後にレジスト５を剥離すると第２図（ｆ）に
示すように金属膜４が若干（例えば２μｍ）非線形抵抗
膜３よりも小さく形成され，液晶表示装置等に使用した
時，非線形抵抗膜３の端部を通じて，画素電極と行また
は列電極の金属膜間に電流が流れにくくなるのでより好
ましい。FIGS. 2A to 2E show other examples of cross-sectional views showing the manufacturing process sequence of the nonlinear resistance element according to the present invention. The process up to FIG. 2C is exactly the same as the example of FIGS. FIG. 2D shows that after the metal film 4 is selectively formed using the resist 5 as a mask,
For example, in a clean orb, a heat treatment is performed at 160 ° C. for 30 minutes, and the end portion of the resist 5 spreads beyond the end portion of the metal film 4 to show a sectional view. FIG. 2E shows a sectional view in which the non-linear resistance element 3 is selectively formed by using the resist 5 as a mask. Finally, when the resist 5 is peeled off, the metal film 4 is formed slightly (for example, 2 μm) smaller than the non-linear resistance film 3 as shown in FIG. 2 (f). It is more preferable that current does not easily flow between the pixel electrodes and the metal films of the row or column electrodes through the edges.
第３図（ａ）〜（ｆ）は，本発明による非線形抵抗素子
の製造工程順を示す断面図の他の例を示す。第３図
（ｄ）の工程までは，第１図（ａ）〜（ｄ）までと全く
同じであるので説明詳略する。第３図（ｅ）は，金属膜
4,非線形抵抗膜３を連続してエツチングした後，金属膜
４が非線形抵抗膜３よりも小さいパターンになるよう
に，再度金属膜４をオーバーエツチしてある。レジスト
５を剥離すると第３図（ｆ）のように金属膜４が非線形
抵抗膜３よりも若干（例えば約２μｍ）小さく形成さ
れ，第２図の例に示したのと同じ効果が得られ好まし
い。3 (a) to 3 (f) show other examples of cross-sectional views showing the manufacturing process sequence of the nonlinear resistance element according to the present invention. The process up to the step of FIG. 3D is exactly the same as the steps of FIGS. Figure 3 (e) shows a metal film
4. After the nonlinear resistance film 3 is continuously etched, the metal film 4 is overetched again so that the metal film 4 has a smaller pattern than the nonlinear resistance film 3. When the resist 5 is peeled off, the metal film 4 is formed to be slightly smaller (for example, about 2 μm) than the non-linear resistance film 3 as shown in FIG. 3 (f), and the same effect as shown in the example of FIG. 2 is obtained, which is preferable. .
なお，非線形抵抗膜3,プラズマCVD装置等で作成され，
化学量論比よりもシリコン含有量の多いシリコン酸化
膜，シリコン窒化膜またはシリコン酸化窒化膜であり，
例えば酸素とシリコンの原子組成比O/Siが，およそ0.1
〜1.5の範囲，窒素とシリコンの原子組成比N/Siが，お
よそ0.1〜1.0の範囲の膜を使用する。In addition, it is created by the non-linear resistance film 3, plasma CVD equipment,
A silicon oxide film, a silicon nitride film, or a silicon oxynitride film having a silicon content higher than the stoichiometric ratio,
For example, the atomic composition ratio O / Si of oxygen and silicon is approximately 0.1
A film having an atomic composition ratio N / Si of nitrogen and silicon of about 0.1 to 1.0 is used.
第４図は，本発明による非線形抵抗素子の１画素の斜視
図の例を示す。ガラス等の透明絶縁基板１上に,ITO等の
透明導電膜である画素電極2,非線形抵抗膜3,行または列
電極である金属膜４から成つている。液晶表示装置を製
作するには，その後液晶の配向処理を施して，行または
列電極配線のあるもう１枚のガラス基板と貼り合わせた
後，液晶を封入しなければならないが，本発明ではその
詳細については省略する。FIG. 4 shows an example of a perspective view of one pixel of the nonlinear resistance element according to the present invention. On a transparent insulating substrate 1 such as glass, a pixel electrode 2 which is a transparent conductive film such as ITO, a non-linear resistance film 3, and a metal film 4 which is a row or column electrode are formed. In order to manufacture a liquid crystal display device, it is necessary to subsequently subject the liquid crystal to an alignment treatment, bond the liquid crystal to another glass substrate having row or column electrode wiring, and then encapsulate the liquid crystal. Details are omitted.
（発明の効果） 上述の説明から明らかなように，本発明の非線形抵抗素
子の製造方法では，行または列電極となる金属膜と非線
形抵抗素子を同一マスクで選択形成するため，従来の非
線形抵抗素子の製造方法に比べてマスク工程が１回少な
くでき，製造コストの低減，高歩留り化が達成できる。(Effects of the Invention) As is apparent from the above description, in the method for manufacturing a nonlinear resistance element of the present invention, since the metal film to be the row or column electrode and the nonlinear resistance element are selectively formed by the same mask, the conventional nonlinear resistance element The number of mask processes can be reduced by one compared to the device manufacturing method, and the manufacturing cost can be reduced and the yield can be increased.
第１図（ａ）〜（ｅ）は本発明による非線形抵抗素子の
製造工程順を示す断面図，第２図（ａ）〜（ｆ）は本発
明の他の実施例の製造工程順を示す断面図，第３図
（ａ）〜（ｆ）は本発明のさらに他の実施例の製造工程
順を示す断面図，第４図は本発明の非線形抵抗素子の傾
斜図，第５図（ａ）〜（ｃ）は従来の非線形抵抗素子の
製造工程の断面図である。 １……基板,2……画素電極,3……非線形抵抗膜,4……金
属膜,5……レジスト1 (a) to 1 (e) are sectional views showing the manufacturing process sequence of the nonlinear resistance element according to the present invention, and FIGS. 2 (a) to 2 (f) are the manufacturing process sequence of another embodiment of the present invention. Sectional views, FIGS. 3 (a) to 3 (f) are sectional views showing a manufacturing process sequence of still another embodiment of the present invention, and FIG. 4 is an inclined view of the nonlinear resistance element of the present invention, and FIG. 5 (a). 8A to 8C are cross-sectional views of a conventional process for manufacturing a nonlinear resistance element. 1 ... Substrate, 2 ... Pixel electrode, 3 ... Non-linear resistance film, 4 ... Metal film, 5 ... Resist
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 49/02 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display H01L 49/02
Claims (2)
らなる画素電極を選択的に形成する第１工程、 （ｂ）化学量論比よりもシリコン含有量の多いシリコン
酸化膜、シリコン窒素膜またはシリコン酸化窒化膜から
なる非線形抵抗膜と金属膜を連続して積層する第２工
程、 （ｃ）レジストを形成し、上記金属膜をフォトエッチン
グにより選択的に除去する第３工程、 （ｄ）上記レジスタの端部を上記金属膜の端部よりも外
側まで変形させた後に、上記非線形抵抗膜を選択的に除
去して、上記金属膜とほぼ同一形状に形成する第４工
程、より成ることを特徴とする非線形抵抗素子の製造方
法。1. A first step of selectively forming a pixel electrode composed of a transparent electrode on at least an insulating substrate, and (b) a silicon oxide film or a silicon nitrogen film having a silicon content higher than a stoichiometric ratio. Or a second step of continuously laminating a nonlinear resistance film made of a silicon oxynitride film and a metal film, (c) a third step of forming a resist and selectively removing the metal film by photoetching, (d) A fourth step of deforming the end portion of the resistor to the outside of the end portion of the metal film and then selectively removing the non-linear resistance film to form a substantially same shape as the metal film. And a method for manufacturing a non-linear resistance element.
らなる画素電極を選択的に形成する第１工程、 （ｂ）化学量論比よりもシリコン含有量の多いシリコン
酸化膜、シリコン窒素膜またはシリコン酸化窒化膜から
なる非線形抵抗膜と金属膜を連続して積層する第２工
程、 （ｃ）レジストを形成し、上記金属膜をフォトエッチン
グにより選択的に除去する第３工程、 （ｄ）上記非線形抵抗膜を選択的に除去した後に、上記
金属膜をエッチングして上記非線形抵抗膜とほぼ同一形
状にする第４工程、より成ることを特徴とする非線形抵
抗素子の製造方法。2. A first step of selectively forming a pixel electrode composed of a transparent electrode on at least an insulating substrate, and (b) a silicon oxide film or a silicon nitrogen film having a silicon content higher than a stoichiometric ratio. Or a second step of continuously laminating a nonlinear resistance film made of a silicon oxynitride film and a metal film, (c) a third step of forming a resist and selectively removing the metal film by photoetching, (d) A method of manufacturing a non-linear resistance element, comprising a fourth step of selectively removing the non-linear resistance film and then etching the metal film to make the non-linear resistance film have substantially the same shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60210617A JPH0740104B2 (en) | 1985-09-24 | 1985-09-24 | Non-linear resistance element manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60210617A JPH0740104B2 (en) | 1985-09-24 | 1985-09-24 | Non-linear resistance element manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6269659A JPS6269659A (en) | 1987-03-30 |
| JPH0740104B2 true JPH0740104B2 (en) | 1995-05-01 |
Family
ID=16592289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60210617A Expired - Fee Related JPH0740104B2 (en) | 1985-09-24 | 1985-09-24 | Non-linear resistance element manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0740104B2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6161197A (en) * | 1984-09-01 | 1986-03-28 | 株式会社半導体エネルギー研究所 | Solid display unit |
| JPH0617956A (en) * | 1992-06-30 | 1994-01-25 | Akio Oba | Solenoid valve |
-
1985
- 1985-09-24 JP JP60210617A patent/JPH0740104B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6269659A (en) | 1987-03-30 |
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