JPH0740464B2 - CRT manufacturing method - Google Patents
CRT manufacturing methodInfo
- Publication number
- JPH0740464B2 JPH0740464B2 JP59238307A JP23830784A JPH0740464B2 JP H0740464 B2 JPH0740464 B2 JP H0740464B2 JP 59238307 A JP59238307 A JP 59238307A JP 23830784 A JP23830784 A JP 23830784A JP H0740464 B2 JPH0740464 B2 JP H0740464B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- coating
- ray tube
- cathode ray
- sio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/89—Optical or photographic arrangements structurally combined or co-operating with the vessel
- H01J29/896—Anti-reflection means, e.g. eliminating glare due to ambient light
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明はブラウン管、特に、前面パネル表面で正反射す
る外来光によつて画像が読み取り難くなることを避ける
ために、SiO2からなる透明で微細な凹凸を有する被膜を
設けて外来光を拡散反射させ、防眩効果をもたせるよう
にしたブラウン管の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a cathode ray tube, and in particular, in order to avoid making an image difficult to read due to extraneous light specularly reflected on the front panel surface, it is made of SiO 2 and is transparent and fine. The present invention relates to a method for manufacturing a cathode ray tube in which a coating film having irregularities is provided to diffusely reflect external light so as to have an antiglare effect.
〔発明の背景〕 一般にブラウン管は、そのパネル表面が光沢状態となつ
ているので、外来光を強烈に反射し易くなり、パネル面
に表示される画像が読み取り難くなるという問題があつ
た。このような問題を改善したものとしては、パネル表
面にノングレヤー処理を施して外来光を拡散反射させた
ブラウン管が提案されている。このようにパネルの表面
に拡散反射を形成する手段には従来から各種の方法が提
案されている。例えば、ブラウン管パネル表面のガラス
を弗酸により選択エツチングして凹凸を設ける方法があ
る。このような方法によると、条件を充分に制御するこ
とにより、一部実用化されているが、公害の問題が発生
し易いこと,傷が付き易いこと,再生処理が不可能なこ
と,完成球では処理できないことなどの問題点が極めて
多い。次にサンドブラスト法と称する研磨剤の吹付けに
よつてパネル表面に凹凸を形成する方法がある。この方
法は、一定の品質が得られないこと,再生が不可能なこ
と,研磨剤などの異物混入の恐れがあることなどの問題
点が多い。その他にプラスチツクフイルムをコーテイン
グする方法もあるが、その表面に傷が付き易いこと,有
機溶剤に溶出し易いことなどの欠点が多い。[Background of the Invention] Generally, since the panel surface of a cathode ray tube is in a glossy state, external light is likely to be strongly reflected, which makes it difficult to read an image displayed on the panel surface. As a solution to this problem, there has been proposed a cathode ray tube in which a panel surface is subjected to a non-glare treatment to diffusely reflect external light. Various methods have heretofore been proposed as means for forming diffuse reflection on the surface of the panel. For example, there is a method of forming irregularities by selectively etching the glass on the surface of the cathode ray tube panel with hydrofluoric acid. According to such a method, some conditions have been put into practical use by controlling the conditions sufficiently, but pollution problems are likely to occur, scratches are likely to occur, recycling processing is impossible, and finished balls There are many problems such as the inability to process. Next, there is a method of forming irregularities on the panel surface by spraying an abrasive called a sand blast method. This method has many problems such as not being able to obtain a certain quality, being unable to be regenerated, and being likely to be mixed with foreign substances such as abrasives. Another method is to coat the plastic film, but it has many drawbacks such as scratches on the surface and easy elution into organic solvents.
また、実公昭44−11150号公報に開示されているように
珪酸のアルカリ塩水溶液(通称水ガラスとも言う)をブ
ラウン管のパネル表面にスプレー等により吹き付けて熱
処理することによつて表面に凹凸状の被膜を形成する方
法もある。しかしながら、この方法では、アルカリが含
有されているために空気中の水分と反応して白濁した
り、表面が溶出したりする問題があつた。Further, as disclosed in Japanese Utility Model Publication No. 44-11150, an aqueous solution of an alkali salt of silicic acid (also called water glass) is sprayed onto the surface of a cathode ray tube by a spray or the like to heat-treat the surface of the surface to make it uneven. There is also a method of forming a film. However, this method has a problem that it reacts with moisture in the air and becomes cloudy or the surface elutes because it contains an alkali.
また、実公昭50−26277号公報に開示されているように
ブラウン管パネルの表面に四塩化珪素とアルコール類ま
たはエステル類との混合溶液を吹き付けることにより、
微細な凹凸状の被膜を形成する方法もある。しかしなが
ら、この方法は良好な被膜が得られるが、塩酸酸性液で
あるためにスプレーノズルを損傷させたり、製造工程に
おける設備,液の取り扱い等に多くの問題がある。さら
に塩酸などのハロゲンイオンはブラウン管の生命である
エミツシヨンスランプに直結するので、その残留分の徹
底的な除去工程が必要となり、工程数が増大して生産コ
ストが高価となる問題がある。また、これらSiO2からな
る凹凸状の被膜を形成する方法において十分な膜強度を
得るためには少なくとも150℃以上、より望ましくは200
℃以上で焼成を行なう必要があるが、その場合、帯電性
が強くなり、電荷の減衰速度が遅くなつて空気中のごみ
やほこりが付着し、長時間の使用により画像を見難くす
る問題があつた。Further, as disclosed in Japanese Utility Model Publication No. 50-26277, by spraying a mixed solution of silicon tetrachloride and alcohols or esters on the surface of a cathode ray tube panel,
There is also a method of forming a fine uneven coating film. However, although this method produces a good film, it has many problems in damaging the spray nozzle, handling the equipment in the manufacturing process, handling the solution, etc. because it is a hydrochloric acid acidic solution. Further, since halogen ions such as hydrochloric acid are directly connected to the emission slump, which is the life of the cathode ray tube, a thorough removal process of the residue is required, and there is a problem that the number of processes increases and the production cost becomes expensive. Further, in order to obtain sufficient film strength in the method for forming the uneven coating film made of SiO 2 , at least 150 ° C. or higher, more preferably 200 ° C. or higher.
It is necessary to perform baking at ℃ or above, but in that case, the chargeability becomes strong, the charge decay rate becomes slow, and dust and dirt in the air adhere, which makes the image difficult to see after long-term use. Atsuta
本発明はこのような事情に鑑みてなされたもので、その
目的は、SiO2反射防止被膜を備えて良好な防眩効果を有
し、しかも帯電量が少なく電荷の減衰速度が速いブラウ
ン管の製造方法を提供することにある。The present invention has been made in view of the above circumstances, and an object thereof is to manufacture a cathode ray tube having a SiO 2 antireflection coating, having a good antiglare effect, and having a small amount of charge and a high charge decay rate. To provide a method.
このような目的を達成するために、本発明は、前述した
ように150℃以上の高温で焼成した被膜の構造がほとん
どすべてSi−O−Siのシロキサン構造に変化しており、
これが帯電性を強くし電荷減衰速度を遅くしているとい
う事実に着目し、前面パネル外表面にSi(OR)4のアル
コール溶液を吹付け塗布し焼成してなるSiO2反射防止被
膜を設けるとともに、最表面層としてシラノール基を含
む帯電防止膜を設けたものである。In order to achieve such an object, according to the present invention, as described above, the structure of the coating film baked at a high temperature of 150 ° C. or higher is almost all changed to a Si—O—Si siloxane structure.
Paying attention to the fact that this enhances the charging property and slows the charge decay rate, an SiO 2 antireflection coating formed by spraying and baking an alcohol solution of Si (OR) 4 is provided on the outer surface of the front panel. The outermost surface layer is provided with an antistatic film containing a silanol group.
このようにシラノール基≡Si−OHの存在により帯電防止
効果が得られるのは、表面のシラノール基は、第1図に
破線で示すような水素結合により水分を吸着しやすく、
その水分によりガラス表面の電気抵抗が109Ωのオーダ
にまで下がるためである。In this way, the presence of the silanol group ≡Si—OH provides the antistatic effect because the surface silanol group easily adsorbs water due to the hydrogen bond as shown by the broken line in FIG.
This is because the water content lowers the electrical resistance of the glass surface to the order of 10 9 Ω.
シラノール基を含む帯電防止膜を形成するには例えば四
塩化ケイ素系の帯電防止剤を塗布する方法がある。ま
た、Si(OR)4のアルコール溶液を塗布後、150℃〜80
℃の低温で焼成しても、Si−O−Siのシロキサン構造に
≡Si−OHが一部残つた帯電防止膜が形成できる。To form an antistatic film containing a silanol group, for example, there is a method of applying a silicon tetrachloride-based antistatic agent. Also, after applying Si (OR) 4 alcohol solution, 150 ℃ ~ 80 ℃
Even if it is fired at a low temperature of ° C, an antistatic film in which ≡Si-OH is partially left in the siloxane structure of Si-O-Si can be formed.
なお、全体の層構造は2層とは限らず、3層以上の多層
としてもよく、いずれにしても最表面層を帯電防止膜と
すればよい。The overall layer structure is not limited to two layers, and may be a multilayer structure of three or more layers. In any case, the outermost surface layer may be the antistatic film.
表は、形成条件を変えて被膜を形成した実球についてそ
の特性を調べた結果を示す。試料中AはSi(OR)4のア
ルコール溶液からなる吹付け液をスプレーで吹付け塗布
し、180℃で30分間の焼成を行なつた参考例で、被膜の
構造はほとんどすべてSi−O−Siのシロキサン構造とな
つており、誘導電圧が初期値の0%に減衰するまで10分
以上かかる。The table shows the results of examining the characteristics of real spheres on which coatings were formed under different forming conditions. In the sample, A is a reference example in which a spray solution consisting of an alcohol solution of Si (OR) 4 was spray-applied and baked at 180 ° C for 30 minutes, and the structure of the coating was almost all Si-O- It has a siloxane structure of Si, and it takes more than 10 minutes for the induced voltage to decay to 0% of the initial value.
これに対し、B,C,D,EはAの被膜に、さらに四塩化ケイ
素系及びエチルシリケート系の帯電防止剤を吹付け液と
して形成した帯電防止膜を積層した例で、焼成を行なわ
ないB,Dでは上記誘導電圧の減衰時間が5秒以内、80℃
で30分間の焼成を行なつたものでも10秒以内と、きわめ
て良好な帯電防止効果を有する。被膜構造はいずれもSi
−O−Siの一部に≡Si−OHを含んだ構造であつた。On the other hand, B, C, D, and E are examples in which an antistatic film formed by spraying a silicon tetrachloride-based and ethylsilicate-based antistatic agent as a spraying liquid is laminated on the film of A, and firing is not performed. In B and D, the decay time of the above induced voltage is within 5 seconds, 80 ℃
Even if it is baked for 30 minutes, it has an excellent antistatic effect within 10 seconds. All coating structures are Si
The structure was such that ≡Si—OH was included in a part of —O—Si.
第2図は、これらA,B,C,D,Eの被膜を形成した実球につ
いて、画像点灯時以降、前面パネル外表面5cm上方で観
測される誘導電位が減衰する様子を示したものである。
図中、△印で示した(イ)がA,○印で示した(ロ)がB,
D, で示した(ハ)がC,Eの各結果を示すが、B,C,D,Eいずれ
の実施例とも、Aに比較して格段に改善されている。 Fig. 2 shows how the induced potential observed on the outer surface 5 cm above the front panel decays after the image is turned on for the real spheres coated with A, B, C, D, and E. is there.
In the figure, △ indicates (A), A indicates ○, and (B) indicates B.
D, (C) shows the respective results of C and E, but in any of the examples of B, C, D, and E, it is markedly improved as compared with A.
このように最表面層にシラノール基を含む帯電防止膜を
設けることにより、空気中のちりやほこりを吸着して汚
れる問題を解消することができる。また、下層にSi(O
R)4のアルコール溶液を吹付け塗布し焼成してなるSiO
2の透明で微細な凹凸を有する膜を設けることにより良
好な防眩効果が得られる。特にその焼成温度を150℃以
上とすれば、十分に大きな膜接着強度が得られる。上述
した実施例では、下層のSiO2反射防止被膜を形成するた
めの吹付け液に、触媒としてHNO3を加えているが、これ
は膜接着強度をさらに高める効果がある。なお、このよ
うに下地のSiO2被膜表面が凹凸を有する状態であるた
め、その上に積層される帯電防止膜の接着強度は大き
い。By thus providing the antistatic film containing a silanol group on the outermost surface layer, it is possible to eliminate the problem of adhering dirt and dust in the air and becoming dirty. In addition, Si (O
R) SiO formed by spraying and baking the alcohol solution of 4.
A good antiglare effect can be obtained by providing the transparent and fine film having fine irregularities. Particularly, if the baking temperature is 150 ° C. or higher, a sufficiently large film adhesion strength can be obtained. In the embodiment described above, HNO 3 is added as a catalyst to the spray liquid for forming the lower SiO 2 antireflection coating, but this has the effect of further increasing the film adhesion strength. Since the surface of the underlying SiO 2 film has irregularities in this way, the adhesion strength of the antistatic film laminated thereon is high.
なお、このような複数層構造の帯電防止膜を備えたSiO2
被膜は、その反射防止という本来の目的から、少なくと
も前面パネルの有効面を覆うように被着する。It should be noted that SiO 2 provided with such a multi-layered antistatic film
The coating is applied so as to cover at least the effective surface of the front panel for its original purpose of preventing reflection.
以上説明したように、本発明によれば、Si(OR)4のア
ルコール溶液を吹付け塗布後焼成してなるSiO2被膜の最
表面層に帯電防止膜を設けたことにより、十分な防眩効
果を有し、しかも帯電防止効果があつて長期間使用して
もほこりやごみの付着による汚れがなく、画像を見難く
し、あるいはユーザに不快感を与えることのない反射防
止膜を備えたブラウン管が得られる。特に、下地のSiO2
膜を150℃以上の高温で焼成した膜とした場合には、被
膜強度が機械的にも化学的にも非常に強く高信頼性の被
膜を形成することができる。As described above, according to the present invention, the antistatic film is provided on the outermost surface layer of the SiO 2 film formed by spraying and baking the alcoholic solution of Si (OR) 4 to obtain sufficient antiglare property. Equipped with an anti-reflective coating that is effective and has no anti-static effect and is free from dirt and dust even when used for a long period of time, making the image difficult to see or causing discomfort to the user. A cathode ray tube is obtained. Especially, the underlying SiO 2
When the film is fired at a high temperature of 150 ° C. or higher, the film strength is very strong mechanically and chemically, and a highly reliable film can be formed.
また、いうまでもないが、本発明による方法は、完成球
にコーテイングするものであり、従来外来光を拡散反射
させるためのノングレア処理として実施されているフツ
酸によりパネル表面自体をエツチングする方法のように
部材からの材料投入ではないため、部材の使用倍率が低
くでき、コストが非常に安くなる。Needless to say, the method according to the present invention is a method of coating on a finished sphere, which is a method of etching the panel surface itself with hydrofluoric acid, which is conventionally performed as a non-glare treatment for diffusely reflecting external light. Since the material is not input from the member as described above, the use magnification of the member can be reduced, and the cost is very low.
第1図は本発明の一実施例を示す帯電防止被膜中のシラ
ノール基の作用を説明するための図、第2図は本発明に
よるブラウン管の帯電特性例を示す図である。FIG. 1 is a diagram for explaining the action of silanol groups in an antistatic coating showing an embodiment of the present invention, and FIG. 2 is a diagram showing an example of charging characteristics of a cathode ray tube according to the present invention.
フロントページの続き (56)参考文献 実開 昭57−154053(JP,U) 実開 昭48−49945(JP,U) 実公 昭50−26277(JP,Y1) 実公 昭45−1946(JP,Y1)Continuation of the front page (56) Bibliography Sho 57-154053 (JP, U) Steady Sho 48-49945 (JP, U) Steal 50-26277 (JP, Y1) Steal 45-1946 (JP , Y1)
Claims (1)
ルキル基)のアルコール溶液を吹付け塗布後150℃以上
で焼成しSiO2の透明で微細な凹凸を有する反射防止被膜
を形成後、この反射防止被膜上にSi(OC2H5)4を吹付
けてシラノール基を含む帯電防止膜を形成することを特
徴とするブラウン管の製造方法。1. An antireflection coating having a transparent and fine irregularity of SiO 2 is formed by spray-coating an alcohol solution of Si (OR) 4 (R is an alkyl group) on the outer surface of the front panel and baking it at 150 ° C. or higher. After the formation, a Si (OC 2 H 5 ) 4 is sprayed on the antireflection film to form an antistatic film containing a silanol group, which is a method for producing a cathode ray tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59238307A JPH0740464B2 (en) | 1984-11-14 | 1984-11-14 | CRT manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59238307A JPH0740464B2 (en) | 1984-11-14 | 1984-11-14 | CRT manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61118946A JPS61118946A (en) | 1986-06-06 |
| JPH0740464B2 true JPH0740464B2 (en) | 1995-05-01 |
Family
ID=17028257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59238307A Expired - Lifetime JPH0740464B2 (en) | 1984-11-14 | 1984-11-14 | CRT manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0740464B2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6237850A (en) * | 1985-08-12 | 1987-02-18 | Taiyo Bussan Kk | Cathode-ray tube |
| JPH0798380B2 (en) * | 1987-08-13 | 1995-10-25 | 東レ株式会社 | Transparent molded product with surface coating |
| US4987338A (en) * | 1988-03-31 | 1991-01-22 | Kabushiki Kaisha Toshiba | Cathode ray tube with film on face-plate |
| US5291097A (en) * | 1990-05-14 | 1994-03-01 | Hitachi, Ltd. | Cathode-ray tube |
| US5660876A (en) * | 1991-06-07 | 1997-08-26 | Sony Corporation | Method of manufacturing cathode ray tube with a nonglare multi-layered film |
| JP3378441B2 (en) | 1996-07-24 | 2003-02-17 | 株式会社東芝 | Cathode ray tube and method of manufacturing the same |
| JP3884110B2 (en) * | 1996-10-09 | 2007-02-21 | 株式会社東芝 | Cathode ray tube |
| TW420817B (en) | 1997-07-08 | 2001-02-01 | Toshiba Corp | Conductive antireflection film and cathod ray tube |
| TW588856U (en) | 1998-06-19 | 2004-05-21 | Tokyo Shibaura Electric Co | Cathode ray tube |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS451946Y1 (en) * | 1966-05-04 | 1970-01-27 | ||
| JPS5026277U (en) * | 1973-07-03 | 1975-03-26 |
-
1984
- 1984-11-14 JP JP59238307A patent/JPH0740464B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61118946A (en) | 1986-06-06 |
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