JPH0750251A - Optical element and manufacturing method thereof - Google Patents
Optical element and manufacturing method thereofInfo
- Publication number
- JPH0750251A JPH0750251A JP19631193A JP19631193A JPH0750251A JP H0750251 A JPH0750251 A JP H0750251A JP 19631193 A JP19631193 A JP 19631193A JP 19631193 A JP19631193 A JP 19631193A JP H0750251 A JPH0750251 A JP H0750251A
- Authority
- JP
- Japan
- Prior art keywords
- multilayer film
- optical element
- substrate
- manufacturing
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
(57)【要約】
【目的】高い反射率を持った、Ｘ線用反射型マスク等の
光学素子の製造方法を提供すること。
【構成】基板１上に、屈折率の異なる少なくとも２種類
の物質の薄膜を順次積層してＸ線を反射する多層膜２を
形成し、この多層膜２上に、メッキ基板５を設け、電子
線レジスト３’のパターンを設け、これをマスクにし
て、Ｘ線吸収体６のパターンをメッキ法を用いて形成す
る。多層膜２を構成する物質の一種類を導電性物質と
し、多層膜の最上層をこの導電性物質の薄膜とすればメ
ッキ基板５は設けなくともよい。
(57) [Abstract] [Purpose] To provide a method of manufacturing an optical element having a high reflectance, such as an X-ray reflective mask. A multilayer film 2 for reflecting X-rays is formed by sequentially laminating thin films of at least two kinds of substances having different refractive indexes on a substrate 1, and a plated substrate 5 is provided on the multilayer film 2. A pattern of the line resist 3'is provided, and using this as a mask, the pattern of the X-ray absorber 6 is formed by a plating method. If one kind of the material forming the multilayer film 2 is a conductive material and the uppermost layer of the multilayer film is a thin film of this conductive material, the plating substrate 5 may not be provided.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、投影露光装置に用いる
Ｘ線用の反射型マスクや回折格子等の光学素子及びその
製造方法並びに反射型マスクの製造方法、回折格子の製
造方法及びフレネルゾーンプレートの製造方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical element such as a reflection type mask and a diffraction grating for X-ray used in a projection exposure apparatus, a method for manufacturing the same, a method for manufacturing a reflection type mask, a method for manufacturing a diffraction grating and a Fresnel zone. The present invention relates to a method for manufacturing a plate.
【０００２】[0002]
【従来の技術】マスク上に描かれた半導体素子の回路パ
ターン等をウェハ上に転写する投影露光装置には、微細
なパターンの転写を行うために、高い解像力が要求され
る。一般に、投影光学系の開口数（ＮＡ）が大きいほ
ど、あるいは露光波長が短いほど解像力は向上する。し
かし、大きなＮＡはパターン転写時に焦点深度の低下を
もたらすので、その大きさには限界がある。2. Description of the Related Art A projection exposure apparatus for transferring a circuit pattern of a semiconductor element drawn on a mask onto a wafer requires high resolution in order to transfer a fine pattern. Generally, the larger the numerical aperture (NA) of the projection optical system or the shorter the exposure wavelength, the higher the resolution. However, since a large NA causes a decrease in the depth of focus during pattern transfer, its size is limited.
【０００３】一方、Ｘ線領域では物質の屈折率が１に極
めて近いので、屈折型レンズの使用は困難で、反射型光
学系を使用する必要がある。近年、屈折率の異なる２種
類の物質の薄膜を交互に多数積層した多層膜鏡が実用化
され、Ｘ線の直入射反射が可能となってきたため、投影
露光装置の光源としてＸ線を使用し、解像力を向上させ
る検討が盛んに行われている。このような多層膜鏡を持
つＸ線用の反射型マスクについては、特開昭６４−４０
２１号公報に記載されている。On the other hand, in the X-ray region, since the refractive index of the substance is very close to 1, it is difficult to use the refraction type lens, and it is necessary to use the reflection type optical system. In recent years, a multilayer film mirror in which a large number of thin films of two kinds of substances having different refractive indices are alternately laminated has been put into practical use, and since X-rays can be directly incident and reflected, it is possible to use X-rays as a light source of a projection exposure apparatus. , Studies to improve the resolution have been actively conducted. An X-ray reflective mask having such a multilayer mirror is disclosed in Japanese Patent Laid-Open No. 64-40.
No. 21 publication.
【０００４】図２は、従来の反射型マスクの製造方法を
示す。まず図２（ａ）に示す如く、十分な厚さをもつ基
板１の上に、重元素を主とする物質と軽元素を主とする
物質を交互に多数積層した多層膜２を形成する。この多
層膜は垂直入射に近いＸ線に対して、高い反射率を有す
る。この多層膜上にＸ線吸収体４を積層し、さらにその
上にレジストパターン３を形成する。次いで図２（ｂ）
に示す如く、レジストパターン３をマスクにして、Ｘ線
吸収体４’をドライエッチングにより形成する。次いで
レジストパターンを除去することにより、図２（ｃ）に
示すようなＸ線反射部とＸ線非反射部とを有する反射型
マスクが製造できる。FIG. 2 shows a conventional method of manufacturing a reflective mask. First, as shown in FIG. 2A, a multilayer film 2 in which a large number of substances containing a heavy element and a main substance of light elements are alternately stacked is formed on a substrate 1 having a sufficient thickness. This multilayer film has a high reflectance for X-rays that are close to normal incidence. An X-ray absorber 4 is laminated on this multilayer film, and a resist pattern 3 is further formed thereon. Then, FIG. 2 (b)
As shown in FIG. 5, the X-ray absorber 4'is formed by dry etching using the resist pattern 3 as a mask. Then, by removing the resist pattern, a reflection type mask having an X-ray reflection portion and an X-ray non-reflection portion as shown in FIG. 2C can be manufactured.
【０００５】[0005]
【発明が解決しようとする課題】上記従来技術は、多層
膜上のＸ線吸収体をドライエッチングにより加工するた
め、プラズマやイオンにより多層膜表面が損傷を受け、
Ｘ線の反射率が低下する問題があった。In the above-mentioned prior art, since the X-ray absorber on the multilayer film is processed by dry etching, the surface of the multilayer film is damaged by plasma or ions.
There is a problem that the reflectance of X-rays is lowered.
【０００６】本発明の目的は、高い反射率を持った、Ｘ
線用反射型マスク等の光学素子及びその製造方法並びに
高い反射率を持った反射型マスクの製造方法、回折格子
の製造方法及びフレネルゾーンプレートの製造方法を提
供することにある。It is an object of the present invention to have a high reflectivity, X
An object of the present invention is to provide an optical element such as a reflective mask for lines and a method for manufacturing the same, a method for manufacturing a reflective mask having a high reflectance, a method for manufacturing a diffraction grating, and a method for manufacturing a Fresnel zone plate.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明の光学素子の製造方法は、基板上に、屈折率
の異なる少なくとも２種類の物質の薄膜を順次積層して
Ｘ線を反射する多層膜を形成し、この多層膜上に、Ｘ線
吸収体の所望のパターンをメッキ法を用いて形成するよ
うにしたものである。In order to achieve the above object, a method of manufacturing an optical element according to the present invention comprises a step of sequentially laminating thin films of at least two kinds of substances having different refractive indexes on a substrate, and performing X-ray irradiation. A reflective multilayer film is formed, and a desired pattern of the X-ray absorber is formed on the multilayer film by a plating method.
【０００８】さらに、上記目的を達成するために、本発
明の反射型マスクの製造方法は、基板上に、屈折率の異
なる少なくとも２種類の物質の薄膜を順次積層してＸ線
を反射する多層膜を形成し、この多層膜上に、Ｘ線吸収
体の所望のパターンをメッキ法を用いて形成するように
したものである。Further, in order to achieve the above object, in the method of manufacturing a reflective mask of the present invention, a thin film of at least two kinds of substances having different refractive indexes is sequentially laminated on a substrate to form a multi-layer for reflecting X-rays. A film is formed, and a desired pattern of the X-ray absorber is formed on the multilayer film by a plating method.
【０００９】さらに、上記目的を達成するために、本発
明の回折格子の製造方法は、基板上に、屈折率の異なる
少なくとも２種類の物質の薄膜を順次積層してＸ線を反
射する多層膜を形成し、この多層膜上に、Ｘ線吸収体の
所望のパターンをメッキ法を用いて形成するようにした
ものである。Further, in order to achieve the above object, the method of manufacturing a diffraction grating according to the present invention is a multilayer film which reflects X-rays by sequentially laminating thin films of at least two kinds of substances having different refractive indexes on a substrate. And a desired pattern of the X-ray absorber is formed on the multilayer film by a plating method.
【００１０】さらに、上記目的を達成するために、本発
明のフレネルゾーンプレートの製造方法は、基板上に、
屈折率の異なる少なくとも２種類の物質の薄膜を順次積
層してＸ線を反射する多層膜を形成し、この多層膜上
に、Ｘ線吸収体の所望のパターンをメッキ法を用いて形
成するようにしたものである。Further, in order to achieve the above object, the method of manufacturing a Fresnel zone plate according to the present invention comprises:
A multilayer film that reflects X-rays is formed by sequentially laminating thin films of at least two kinds of substances having different refractive indexes, and a desired pattern of the X-ray absorber is formed on the multilayer film by using a plating method. It is the one.
【００１１】いずれの方法においても、多層膜を形成し
た後、多層膜上に、所望の材質のパターンを形成し、こ
のパターンをマスクとしてＸ線吸収体の所望のパターン
を形成することが好ましい。また、多層膜を構成する物
質の少なくとも一種類を導電性物質とし、多層膜の最上
層をこの導電性物質の薄膜とするか、或いは多層膜上に
導電性のメッキ基板を形成することにより、メッキを容
易に行うことができる。メッキは、電解メッキでも無電
解メッキでもよい。また、Ｘ線吸収体は、Ａｕ、Ｎｉ、
Ｃｕ、Ｃｒ及びＰｂからなる群から選ばれた少なくとも
一種の材料であることが好ましい。In any of the methods, it is preferable that after forming the multilayer film, a pattern of a desired material is formed on the multilayer film, and using this pattern as a mask, the desired pattern of the X-ray absorber is formed. In addition, by using at least one kind of a material constituting the multilayer film as a conductive material and forming the uppermost layer of the multilayer film as a thin film of this conductive material, or by forming a conductive plated substrate on the multilayer film, Plating can be easily performed. The plating may be electrolytic plating or electroless plating. Further, the X-ray absorber is Au, Ni,
It is preferably at least one material selected from the group consisting of Cu, Cr and Pb.
【００１２】さらにまた、上記目的を達成するために、
本発明の光学素子は、基板上に、屈折率の異なる少なく
とも２種類の物質の薄膜が順次積層された、Ｘ線を反射
する多層膜を配置し、この多層膜上に、導電性のメッキ
基板と、所望のパターンのＸ線吸収体を積層して構成し
たものである。Furthermore, in order to achieve the above object,
In the optical element of the present invention, an X-ray-reflecting multilayer film, in which thin films of at least two kinds of substances having different refractive indexes are sequentially laminated, is arranged on the substrate, and a conductive plating substrate is provided on the multilayer film. And an X-ray absorber having a desired pattern are laminated.
【００１３】[0013]
【作用】Ｘ線吸収体のパターンがドライエッチング工程
を用いることなく製造できるので、Ｘ線反射部の反射率
を劣化させることがない。そのため、反射したＸ線の強
度が高い。Since the pattern of the X-ray absorber can be manufactured without using the dry etching process, the reflectance of the X-ray reflecting portion is not deteriorated. Therefore, the intensity of the reflected X-ray is high.
【００１４】[0014]
【実施例】図１は、本発明の一実施例の反射型マスクの
製造方法を示す工程図である。基板１は厚さ５ｍｍのＳ
ｉＣであり、表面粗さｒｍｓ（２乗平均根）値０．３ｎ
ｍに光学研磨されている。多層膜２は、マグネトロンス
パッタ装置を用い、厚さ２．５ｎｍのＭｏ薄膜と、厚さ
４．２ｎｍのＳｉ薄膜を、交互に各々５０層積層したも
ので、最上層はＳｉで終端した。この多層膜上に、メッ
キ基板５として、厚さ２．５ｎｍのＡｕを積層し、ＰＭ
ＭＡ（ポリメチルメタクリレート）からなる電子線レジ
スト３’を０．３μｍの厚さに塗布し、電子線露光及び
現像を行ってパターンを形成した（図１（ａ））。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a process chart showing a method of manufacturing a reflective mask according to an embodiment of the present invention. Substrate 1 is 5 mm thick S
iC, surface roughness rms (root mean square) value 0.3n
It is optically polished to m. The multilayer film 2 was formed by alternately stacking 50 layers of a Mo thin film having a thickness of 2.5 nm and a Si thin film having a thickness of 4.2 nm using a magnetron sputtering apparatus, and the uppermost layer was terminated with Si. On this multilayer film, a plated substrate 5 of Au with a thickness of 2.5 nm is laminated, and PM
An electron beam resist 3 ′ made of MA (polymethylmethacrylate) was applied to a thickness of 0.3 μm, and electron beam exposure and development were performed to form a pattern (FIG. 1A).
【００１５】次いで、メッキ液としてアルカリ性電解メ
ッキ液を用い、１ｍＡ／ｃｍ2の通電を行い、メッキ基
板上にＸ線吸収体６としてＡｕを０．１μｍの厚さにな
るように析出させた（図１（ｂ））。この時レジストの
パターンにはＡｕの付着はなく、レジストをアセトン等
の有機溶剤により除去することにより、図１（ｃ）に示
す構造の反射型マスクが得られた。レジストを除去した
反射面は、波長１４ｎｍ、入射角５°のＸ線に対し、反
射率５０％を示した。Next, an alkaline electrolytic plating solution was used as a plating solution, and a current of 1 mA / cm 2 was applied to deposit Au as an X-ray absorber 6 on the plated substrate to a thickness of 0.1 μm ( FIG. 1B). At this time, Au was not attached to the resist pattern, and the resist was removed by an organic solvent such as acetone to obtain a reflective mask having a structure shown in FIG. 1 (c). The reflection surface from which the resist was removed exhibited a reflectance of 50% with respect to X-rays having a wavelength of 14 nm and an incident angle of 5 °.
【００１６】なお、本発明は、上述した実施例に限定さ
れるものではない。基板としては、Ｓｉ、溶融石英等の
平滑加工しやすい材料を用いることができる。また、多
層膜の構成材料として、Ａｕ、Ｍｏ、Ｒｕ、Ｒｈ、Ｗ、
Ｒｅ、Ｎｉ、Ｃｒ等の重元素とＢｅ、Ｂ、Ｃ、Ｓｉ、Ｂ
Ｎ、ＳｉＣ、Ｂ4Ｃ、等の軽元素を組み合わせても略同
様の効果が得られた。特に重元素としてＡｕ、Ｎｉ、Ｃ
ｒを用い、これらの層を最上層とすれば、各々同一材料
のメッキ基板として用いることができるため、新たにメ
ッキ基板を積層する必要がなかった。また、それぞれの
層を２０層から６０層としても反射型マスクを製造する
ことができた。ただし、層数が少ないときは反射率が小
さくなる。多層膜の形成法としては、イオンビームスパ
ッタ法、電子ビーム蒸着法、ＣＶＤ法等を使用してもよ
い。The present invention is not limited to the above embodiment. As the substrate, a material such as Si or fused quartz that can be easily smoothed can be used. Further, as a constituent material of the multilayer film, Au, Mo, Ru, Rh, W,
Heavy elements such as Re, Ni, Cr and Be, B, C, Si, B
Even if light elements such as N, SiC, and B 4 C were combined, substantially the same effect was obtained. Especially as heavy elements Au, Ni, C
If r is used and these layers are used as the uppermost layers, they can be used as plated substrates of the same material, so that it is not necessary to stack another plated substrate. Further, the reflective mask could be manufactured even when each layer was 20 to 60 layers. However, when the number of layers is small, the reflectance becomes small. As a method for forming the multilayer film, an ion beam sputtering method, an electron beam vapor deposition method, a CVD method or the like may be used.
【００１７】また、メッキ基板を設けるときは、その厚
さは１ｎｍから２．５ｎｍの範囲とした。厚さが１ｎｍ
未満では均一な膜とするのが困難なためである。Ｘ線吸
収体としてＣｕ又はＰｂ用いるとき、これらのメッキの
ためには、メッキ基板としてＣｕ若しくはＡｕ又はこれ
らの合金とすることが好ましい。When the plated substrate is provided, its thickness is in the range of 1 nm to 2.5 nm. Thickness is 1 nm
This is because it is difficult to form a uniform film if the amount is less than 1. When Cu or Pb is used as the X-ray absorber, Cu or Au or an alloy thereof is preferably used as the plating substrate for plating these.
【００１８】Ｘ線吸収体は、無電解メッキでも得られ
た。さらに、Ａｕの他にＮｉ、Ｃｕ、Ｃｒ、Ｐｂ又はこ
れら（Ａｕも含む）の合金を用いても同様な結果が得ら
れた。Ｘ線吸収体の厚さは、加工しやすくするために
０．１μｍ以下とし、またＸ線吸収の効果を上げるため
に０．０５μｍ以上とした。なお、パターンの形成方法
としては、電子ビーム描画の他に、収束イオンビーム、
水銀ランプやエキシマレーザによる光学露光も考えられ
る。また、本発明は、半導体集積回路製作用の反射型マ
スクの他に、反射面にパターンを有する多層膜光学素子
にも適用できる。この多層膜光学素子としては、例えば
反射型フレネルゾーンプレートがある。The X-ray absorber was also obtained by electroless plating. Furthermore, similar results were obtained by using Ni, Cu, Cr, Pb or alloys of these (including Au) in addition to Au. The thickness of the X-ray absorber was set to 0.1 μm or less in order to facilitate processing, and was set to 0.05 μm or more in order to enhance the X-ray absorption effect. As the pattern forming method, in addition to electron beam writing, a focused ion beam,
Optical exposure using a mercury lamp or an excimer laser is also conceivable. Further, the present invention can be applied not only to a reflective mask for manufacturing a semiconductor integrated circuit, but also to a multilayer optical element having a pattern on its reflective surface. An example of the multilayer film optical element is a reflective Fresnel zone plate.
【００１９】[0019]
【発明の効果】本発明によれば、高い反射率を有する光
学素子、反射型マスク、回折格子、フレネルゾーンプレ
ートを作製することができた。例えば、このような反射
型マスクを用いれば、半導体素子製造のリソグラフィ工
程におけるスループットを向上することができた。According to the present invention, an optical element, a reflective mask, a diffraction grating and a Fresnel zone plate having a high reflectance could be manufactured. For example, if such a reflective mask is used, it is possible to improve the throughput in the lithography process of manufacturing a semiconductor device.
【図１】本発明の一実施例の反射型マスクの製造方法を
説明するための工程図である。FIG. 1 is a process chart for explaining a method of manufacturing a reflective mask according to an embodiment of the present invention.
【図２】従来の反射型マスクの製造方法を説明するため
の工程図である。FIG. 2 is a process drawing for explaining a conventional method of manufacturing a reflective mask.
１…基板 ２…多層膜 ３…レジストパターン ３’…電子線レジスト ４、４’、６…Ｘ線吸収体 ５…メッキ基板 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... Multilayer film 3 ... Resist pattern 3 '... Electron beam resist 4, 4', 6 ... X-ray absorber 5 ... Plating substrate
───────────────────────────────────────────────────── フロントページの続き (72)発明者 老泉 博昭 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 武田 英次 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Hiroaki Oizumi, 1-280 Higashi Koikeku, Kokubunji, Tokyo Metropolitan Research Laboratory, Hitachi, Ltd. (72) Eiji Takeda 1-280 Higashi Koikeku, Kokubunji, Tokyo Hitachi Central Research Laboratory
Claims (12)
類の物質の薄膜を順次積層してＸ線を反射する多層膜を
形成する第１の工程と、該多層膜上に、Ｘ線吸収体の所
望のパターンをメッキ法を用いて形成する第２の工程と
を有することを特徴とする光学素子の製造方法。1. A first step of sequentially laminating thin films of at least two kinds of substances having different refractive indexes on a substrate to form a multilayer film that reflects X-rays, and X-ray absorption on the multilayer film. A second step of forming a desired pattern on the body by using a plating method.
上記多層膜上に、所望の材質のパターンを形成する工程
を有し、上記第２の工程は、該所望の材質のパターンを
マスクとして行うことを特徴とする請求項１記載の光学
素子の製造方法。2. After the first step and before the second step,
The manufacturing of an optical element according to claim 1, further comprising a step of forming a pattern of a desired material on the multilayer film, wherein the second step is performed using the pattern of the desired material as a mask. Method.
であり、上記多層膜の最上層は、該導電性物質の薄膜で
あることを特徴とする請求項１又は２記載の光学素子の
製造方法。3. The manufacture of the optical element according to claim 1, wherein at least one kind of the substance is a conductive substance, and the uppermost layer of the multilayer film is a thin film of the conductive substance. Method.
上記多層膜上に、導電性のメッキ基板を形成する工程及
びメッキ基板上に、所望の材質のパターンを形成する工
程を有し、上記第２の工程は、該所望の材質のパターン
をマスクとして行うことを特徴とする請求項１記載の光
学素子の製造方法。4. After the first step and before the second step,
The method has a step of forming a conductive plated substrate on the multilayer film and a step of forming a pattern of a desired material on the plated substrate, and the second step uses the pattern of the desired material as a mask. The method for manufacturing an optical element according to claim 1, which is performed.
特徴とする請求項１から４のいずれか一に記載の光学素
子の製造方法。5. The method of manufacturing an optical element according to claim 1, wherein the plating method is electrolytic plating.
を特徴とする請求項１から４のいずれか一に記載の光学
素子の製造方法。6. The method for manufacturing an optical element according to claim 1, wherein the plating method is electroless plating.
ｒ及びＰｂからなる群から選ばれた少なくとも一種の材
料であることを特徴とする請求項１から６のいずれか一
に記載の光学素子の製造方法。7. The X-ray absorber is Au, Ni, Cu or C.
7. The method for manufacturing an optical element according to claim 1, wherein the material is at least one material selected from the group consisting of r and Pb.
類の物質の薄膜を順次積層してＸ線を反射する多層膜を
形成する第１の工程と、該多層膜上に、Ｘ線吸収体の所
望のパターンをメッキ法を用いて形成する第２の工程と
を有することを特徴とする反射型マスクの製造方法。8. A first step of sequentially laminating thin films of at least two kinds of substances having different refractive indexes on a substrate to form a multilayer film that reflects X-rays, and X-ray absorption on the multilayer film. And a second step of forming a desired pattern on the body by using a plating method.
類の物質の薄膜を順次積層してＸ線を反射する多層膜を
形成する第１の工程と、該多層膜上に、Ｘ線吸収体の所
望のパターンをメッキ法を用いて形成する第２の工程と
を有することを特徴とする回折格子の製造方法。9. A first step of sequentially laminating thin films of at least two kinds of substances having different refractive indexes on a substrate to form a multilayer film that reflects X-rays, and absorbing X-rays on the multilayer film. A second step of forming a desired pattern on the body by using a plating method.
種類の物質の薄膜を順次積層してＸ線を反射する多層膜
を形成する第１の工程と、該多層膜上に、Ｘ線吸収体の
所望のパターンをメッキ法を用いて形成する第２の工程
とを有することを特徴とするフレネルゾーンプレートの
製造方法。10. A substrate having at least two different refractive indices.
A first step of sequentially laminating thin films of various substances to form a multilayer film that reflects X-rays, and a second step of forming a desired pattern of an X-ray absorber on the multilayer film by a plating method And a step of manufacturing the Fresnel zone plate.
種類の物質の薄膜が順次積層された、Ｘ線を反射する多
層膜が配置され、該多層膜上に、導電性のメッキ基板
と、所望のパターンのＸ線吸収体が積層されていること
を特徴とする光学素子。11. A substrate having at least two different refractive indexes.
A multilayer film that reflects X-rays, in which thin films of various kinds of substances are sequentially stacked, is arranged, and a conductive plating substrate and an X-ray absorber having a desired pattern are stacked on the multilayer film. Characteristic optical element.
Ｃｒ及びＰｂからなる群から選ばれた少なくとも一種の
材料であることを特徴とする請求項１１記載の光学素
子。12. The X-ray absorber is made of Au, Ni, Cu,
The optical element according to claim 11, wherein the optical element is at least one material selected from the group consisting of Cr and Pb.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19631193A JP3192533B2 (en) | 1993-08-06 | 1993-08-06 | Optical element manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19631193A JP3192533B2 (en) | 1993-08-06 | 1993-08-06 | Optical element manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0750251A true JPH0750251A (en) | 1995-02-21 |
| JP3192533B2 JP3192533B2 (en) | 2001-07-30 |
Family
ID=16355703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19631193A Expired - Fee Related JP3192533B2 (en) | 1993-08-06 | 1993-08-06 | Optical element manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3192533B2 (en) |
-
1993
- 1993-08-06 JP JP19631193A patent/JP3192533B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP3192533B2 (en) | 2001-07-30 |
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