JPH0750794B2 - Method for manufacturing photoelectric conversion element - Google Patents
Method for manufacturing photoelectric conversion elementInfo
- Publication number
- JPH0750794B2 JPH0750794B2 JP2171525A JP17152590A JPH0750794B2 JP H0750794 B2 JPH0750794 B2 JP H0750794B2 JP 2171525 A JP2171525 A JP 2171525A JP 17152590 A JP17152590 A JP 17152590A JP H0750794 B2 JPH0750794 B2 JP H0750794B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode film
- photoelectric conversion
- conversion element
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title description 15
- 238000000034 method Methods 0.000 title description 8
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 16
- 229920001721 polyimide Polymers 0.000 claims description 15
- 238000007872 degassing Methods 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Description
【発明の詳細な説明】 （イ）産業上の利用分野 本発明は、光電変換素子の製造方法に関し、詳細には、
テクスチャー構造を備えた光電変換素子の製造方法に係
る。TECHNICAL FIELD The present invention relates to a method for manufacturing a photoelectric conversion element, and more specifically,
The present invention relates to a method for manufacturing a photoelectric conversion element having a texture structure.
（ロ）従来の技術 光起電力装置、光センサ等の光電変換素子において、そ
の光電変換効率を向上させるために、半導体膜中への入
射光を散乱させる方法が取られている。具体的には、透
明基板上に、透明電極膜、半導体膜及び金属電極膜をこ
の順に形成した構造の光電変換素子にあっては、特開昭
59-123283号公報等に示された如く、基板表面またはこ
の基板上に形成される透明電極表面を、エッチング等の
手法を施すことによって、テクスチャー構造（凹凸状）
としている。(B) Conventional Technology In photoelectric conversion elements such as photovoltaic devices and photosensors, a method of scattering incident light into a semiconductor film has been adopted in order to improve the photoelectric conversion efficiency. Specifically, a photoelectric conversion element having a structure in which a transparent electrode film, a semiconductor film and a metal electrode film are formed in this order on a transparent substrate is disclosed in
As shown in Japanese Patent Publication No. 59-123283, etc., a texture structure (unevenness) is obtained by subjecting the surface of the substrate or the surface of the transparent electrode formed on this substrate to a method such as etching.
I am trying.
一方、可撓性を有する光電変換素子を形成すべく、表面
に絶縁膜を形成したステンレス等の可撓性基板を用いた
ものが、特開昭59-124175号公報等に記載されている。
このような光電変換素子においては、基板の絶縁膜上
に、金属電極膜、半導体膜及び透明電極膜をこの順に形
成するために、基板側と反対側から光入射が行われる構
成となる。この場合、上述の如く、半導体膜への入射光
の散乱を行わしめるには、最後に形成される透明電極膜
の表面をテクスチャー構造とする必要がある。On the other hand, JP-A-59-124175 discloses a device using a flexible substrate such as stainless steel having an insulating film formed on its surface in order to form a flexible photoelectric conversion element.
In such a photoelectric conversion element, since the metal electrode film, the semiconductor film, and the transparent electrode film are formed in this order on the insulating film of the substrate, light is incident from the side opposite to the substrate side. In this case, as described above, in order to scatter the incident light on the semiconductor film, it is necessary to make the surface of the finally formed transparent electrode film a texture structure.
（ハ）発明が解決しようとする課題 基板の反対側から光入射が行われる構造の光電変換素子
においては、透明電極膜の表面をテクスチャー構造とす
るに当って、既に形成されている金属電極膜や半導体膜
にダメージを与える可能性があり、従って、透明電極膜
表面をテクスチャー構造とするのは好ましくない。(C) Problems to be Solved by the Invention In a photoelectric conversion element having a structure in which light is incident from the opposite side of a substrate, a metal electrode film that has already been formed when the surface of the transparent electrode film has a texture structure Moreover, it may damage the semiconductor film, and therefore it is not preferable to make the surface of the transparent electrode film a texture structure.
また、透明基板側から光入射を行う構造の光電変換素子
にあっても、この表面に形成される透明電極膜の表面を
テクスチャー構造とするには、従来、基板表面または透
明電極膜表面をエッチング処理しており、作業的に繁雑
である。Further, even in a photoelectric conversion element having a structure in which light is incident from the transparent substrate side, in order to make the surface of the transparent electrode film formed on this surface a texture structure, conventionally, the substrate surface or the transparent electrode film surface is etched. It is processed, and it is complicated in terms of work.
そこで、本発明の目的は、光電変換素子の構造に関係な
く、簡単に透明電極膜表面をテクスチャー構造とするこ
とにある。Therefore, an object of the present invention is to easily make the surface of the transparent electrode film a texture structure regardless of the structure of the photoelectric conversion element.
（ニ）課題を解決するための手段 本発明の光電変換素子の製造方法は、基板上に、ポリイ
ミド膜及び第１電極膜をこの順に積層形成した後に、上
記ポリイミド膜からの脱ガスに因り、上記第１電極膜の
表面をテクスチャー構造とすべく、低圧状態で加熱処理
し、該第１電極膜上に、半導体膜及び第２電極膜を積層
形成することを特徴とする。(D) Means for Solving the Problems The method for manufacturing a photoelectric conversion element of the present invention is, on a substrate, after forming a polyimide film and a first electrode film in this order, due to degassing from the polyimide film, In order to make the surface of the first electrode film have a texture structure, heat treatment is performed in a low pressure state, and a semiconductor film and a second electrode film are laminated and formed on the first electrode film.
（ホ）作用 本発明によれば、基板上に、ポリイミド膜及び第１電極
膜をこの順に積層形成して低圧状態で加熱処理すること
により、ポリイミド膜中から水素、酸素等の脱ガスが生
じ、そして、この脱ガスは、ポリイミド膜内に閉じ込め
られたままとなる。よって、第１電極膜の表面がテクス
チャー状態となり、その後、上記第１電極膜上に形成さ
れる半導体膜及び第２電極膜の表面もテクスチャー状態
となる。(E) Function According to the present invention, a polyimide film and a first electrode film are laminated in this order on a substrate and subjected to heat treatment under a low pressure, whereby degassing of hydrogen, oxygen, etc. occurs from the polyimide film. , And this outgas remains trapped within the polyimide film. Therefore, the surface of the first electrode film is in a textured state, and then the surfaces of the semiconductor film and the second electrode film formed on the first electrode film are also in a textured state.
（ヘ）実施例 第１図（Ａ）乃至第１図（Ｄ）は本発明の光電変換素子
の製造方法を工程順に示す断面図である。(F) Example FIGS. 1A to 1D are sectional views showing a method of manufacturing a photoelectric conversion element of the present invention in the order of steps.
同図（Ａ）の工程において、ステンレス等の可撓性基板
１上に、スピンコート法等によりポリイミド膜２が形成
され、更に、第１電極膜３として、Al、Ti等の金属膜が
積層形成される。In the step of FIG. 3A, a polyimide film 2 is formed on a flexible substrate 1 made of stainless steel or the like by a spin coating method or the like, and a metal film such as Al or Ti is laminated as a first electrode film 3. It is formed.
同図（Ｂ）の工程において、上述のようにしてポリイミ
ド膜２及び第１電極膜３が積層形成された基板１を、１
×10-2Torr以下の圧力のチャンバー内に導入し、ランプ
ヒータ等を用いて基板１を300〜350℃に加熱する。この
ような、所謂真空アニールを行うことにより、ポリイミ
ド膜２中から水素、酸素等の脱ガスが生じるが、この脱
ガスは、第１電極膜３の存在によって外部に逃げられ
ず、ポリイミド膜２内に閉じ込められたままとなる。よ
って、第１電極膜３の表面は、同図（Ｂ）に示すよう
に、テクスチャー状態となる。In the step of FIG. 1B, the substrate 1 on which the polyimide film 2 and the first electrode film 3 are laminated and formed as described above is
The substrate 1 is introduced into a chamber having a pressure of × 10 -2 Torr or less, and the substrate 1 is heated to 300 to 350 ° C by using a lamp heater or the like. By performing such so-called vacuum annealing, degassing of hydrogen, oxygen, etc. occurs in the polyimide film 2, but this degassing does not escape to the outside due to the existence of the first electrode film 3, and the polyimide film 2 It remains trapped inside. Therefore, the surface of the first electrode film 3 is in a textured state as shown in FIG.
尚、基板１の温度が300℃より低い場合には、ポリイミ
ド膜２からの脱ガス量が少なく、第１電極膜３の表面は
テクスチャー構造とならず、また、逆に350℃より高い
場合には、ポリイミド膜２からの脱ガス量が多すぎて、
適切なテクスチャー構造とならない。従って、真空アニ
ールにおける基板１の温度は、上述のように、300〜350
℃の範囲とする。When the temperature of the substrate 1 is lower than 300 ° C, the amount of degassing from the polyimide film 2 is small, the surface of the first electrode film 3 does not have a texture structure, and conversely, when the temperature is higher than 350 ° C. Is too much degassed from the polyimide film 2,
Does not have an appropriate texture structure. Therefore, the temperature of the substrate 1 in the vacuum annealing is 300 to 350 as described above.
It shall be in the range of ° C.
次に、同図（Ｃ）の工程において、第１電極膜３上に、
半導体膜４を形成する。この半導体膜４は、原料ガスと
してSiH4、SiF4等のシリコン化合物ガスを用いたプラズ
マCVD法や光CVD法等により形成されるアモルファスシリ
コン（a-Si）、アモルファスシリコンカーバイド（a-Si
C）等のアモルファス半導体からなり、光電変換動作を
行うべく、膜面と平行にpn、pin等の半導体接合を有す
る。Next, in the step of FIG. 3C, on the first electrode film 3,
The semiconductor film 4 is formed. This semiconductor film 4 is formed of amorphous silicon (a-Si) or amorphous silicon carbide (a-Si) formed by a plasma CVD method or a photo CVD method using a silicon compound gas such as SiH 4 or SiF 4 as a raw material gas.
It is made of amorphous semiconductor such as C) and has semiconductor junctions such as pn and pin parallel to the film surface in order to perform photoelectric conversion operation.
最後に、同図（Ｄ）の工程において、半導体膜４上に、
第２電極膜５として、ITO、SnO2等の透光性導電酸化物
（TCO）からなる透明電極膜が形成される。Finally, in the step of FIG.
As the second electrode film 5, a transparent electrode film made of a transparent conductive oxide (TCO) such as ITO or SnO 2 is formed.
以上の方法により製造された光電変換素子は、第１電極
膜３の表面がテクスチャー構造となっているため、この
影響を受けて、この第１電極膜３上に順に積層形成され
る半導体膜４及び第２電極膜５の表面もテクスチャー構
造となる。よって、第２電極膜５側から照射される光
は、第２電極膜５にて散乱されて半導体膜４中に入射さ
れる。In the photoelectric conversion element manufactured by the above method, the surface of the first electrode film 3 has a textured structure, and under the influence of this, the semiconductor film 4 sequentially stacked on the first electrode film 3 is formed. The surface of the second electrode film 5 also has a texture structure. Therefore, the light emitted from the second electrode film 5 side is scattered by the second electrode film 5 and enters the semiconductor film 4.
（ト）発明の効果 本発明によれば、基板上に、ポリイミド膜及び第１電極
膜をこの順に積層形成した後、低圧状態で加熱すること
によってポリイミド膜から脱ガスが生じ、その結果第１
電極膜表面がテクスチャー構造となり、よって、その後
に上記第１電極膜上に積層形成される半導体膜及び第２
電極膜の表面を、容易にテクスチャー構造とすることが
できる。従って、半導体膜中に光が散乱して入射して光
の吸収効率が増大し、出力特性が向上する。(G) Effect of the Invention According to the present invention, a polyimide film and a first electrode film are laminated in this order on a substrate and then heated at a low pressure to cause degassing from the polyimide film, resulting in the first film.
The surface of the electrode film has a textured structure, so that the semiconductor film and the second film that are subsequently laminated on the first electrode film are formed.
The surface of the electrode film can easily have a texture structure. Therefore, the light is scattered and incident on the semiconductor film to increase the light absorption efficiency and improve the output characteristics.
第１図（Ａ）乃至（Ｄ）は、本発明の製造方法を工程順
に示す断面図である。FIGS. 1A to 1D are cross-sectional views showing the manufacturing method of the present invention in the order of steps.
Claims (1)
この順に積層形成した後に、 上記ポリイミド膜からの脱ガスに因り、上記第１電極膜
の表面をテクスチャー構造とすべく、低圧状態で加熱処
理し、 該第１電極膜上に、半導体膜及び第２電極膜を積層形成
することを特徴とする光電変換素子の製造方法。1. A polyimide film and a first electrode film are laminated in this order on a substrate, and a low pressure state is formed so that the surface of the first electrode film has a texture structure due to degassing from the polyimide film. And a semiconductor film and a second electrode film are laminated and formed on the first electrode film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2171525A JPH0750794B2 (en) | 1990-06-28 | 1990-06-28 | Method for manufacturing photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2171525A JPH0750794B2 (en) | 1990-06-28 | 1990-06-28 | Method for manufacturing photoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0461285A JPH0461285A (en) | 1992-02-27 |
| JPH0750794B2 true JPH0750794B2 (en) | 1995-05-31 |
Family
ID=15924737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2171525A Expired - Fee Related JPH0750794B2 (en) | 1990-06-28 | 1990-06-28 | Method for manufacturing photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0750794B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008146896A1 (en) | 2007-05-23 | 2008-12-04 | Teijin Dupont Films Japan Limited | Multilayer film for solar cell base |
| WO2009096610A1 (en) | 2008-01-31 | 2009-08-06 | Teijin Dupont Films Japan Limited | Solar battery base |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2652089B2 (en) * | 1991-06-14 | 1997-09-10 | シャープ株式会社 | Photovoltaic device |
| EP2339645A4 (en) | 2008-10-03 | 2014-03-26 | Toppan Printing Co Ltd | SOLAR BATTERY MODULE |
| EP2356696A4 (en) * | 2009-05-06 | 2013-05-15 | Thinsilicon Corp | PHOTOVOLTAIC CELLS AND METHODS FOR ENHANCING LIGHT TRAPPING IN SEMICONDUCTOR LAYER STACKS |
-
1990
- 1990-06-28 JP JP2171525A patent/JPH0750794B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008146896A1 (en) | 2007-05-23 | 2008-12-04 | Teijin Dupont Films Japan Limited | Multilayer film for solar cell base |
| WO2009096610A1 (en) | 2008-01-31 | 2009-08-06 | Teijin Dupont Films Japan Limited | Solar battery base |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0461285A (en) | 1992-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI459577B (en) | Method for manufacturing crystal 矽 solar cell with improved surface protection film | |
| CN101199060B (en) | Solar cell element and method for manufacturing solar cell element | |
| JP3469729B2 (en) | Solar cell element | |
| TWI453939B (en) | Solar cell and manufacturing method thereof | |
| JP2002270879A (en) | Semiconductor device | |
| KR20080074127A (en) | Method of manufacturing n-type polycrystalline silicon solar cell | |
| JP2931498B2 (en) | Solar cell and method of manufacturing the same | |
| JP2012023228A (en) | Method and device of manufacturing solar cell | |
| JPWO2009131111A1 (en) | SOLAR CELL MANUFACTURING METHOD, SOLAR CELL MANUFACTURING DEVICE, AND SOLAR CELL | |
| TWM517422U (en) | Heterojunction solar cell structure with local passivation | |
| JPWO2007060744A1 (en) | Solar cell and manufacturing method thereof | |
| JP2989373B2 (en) | Method for manufacturing photoelectric conversion device | |
| TWI650872B (en) | Solar cell and its manufacturing method, solar cell module and solar cell power generation system | |
| JPH0750794B2 (en) | Method for manufacturing photoelectric conversion element | |
| KR101065384B1 (en) | Solar cell and manufacturing method | |
| CN113611754A (en) | Solar cell, solar cell manufacturing method and photovoltaic module | |
| JP2014239104A (en) | Solar cell, solar cell module, and method for manufacturing the same | |
| CN102403398A (en) | Method for manufacturing solar cell | |
| JP2004235272A (en) | Solar cell element and method of manufacturing the same | |
| JP4486622B2 (en) | Manufacturing method of solar cell | |
| JP3346907B2 (en) | Solar cell and method of manufacturing the same | |
| JP3609147B2 (en) | Photoelectric conversion device | |
| TWI474495B (en) | Method of manufacturing solar cells | |
| CN120239367B (en) | Solar cell and preparation method thereof and photovoltaic module | |
| JP3016950B2 (en) | Method for manufacturing photovoltaic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |