JPH0752623B2 - Liquid boron-containing alloy ion source structure - Google Patents
Liquid boron-containing alloy ion source structureInfo
- Publication number
- JPH0752623B2 JPH0752623B2 JP60077306A JP7730685A JPH0752623B2 JP H0752623 B2 JPH0752623 B2 JP H0752623B2 JP 60077306 A JP60077306 A JP 60077306A JP 7730685 A JP7730685 A JP 7730685A JP H0752623 B2 JPH0752623 B2 JP H0752623B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- ion source
- containing alloy
- source structure
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910045601 alloy Inorganic materials 0.000 title claims description 19
- 239000000956 alloy Substances 0.000 title claims description 19
- 229910052796 boron Inorganic materials 0.000 title claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims description 7
- 239000007788 liquid Substances 0.000 title claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 10
- 238000010884 ion-beam technique Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 229910001338 liquidmetal Inorganic materials 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- 150000001247 metal acetylides Chemical class 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910008423 Si—B Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021397 glassy carbon Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/26—Ion sources; Ion guns using surface ionisation, e.g. field effect ion sources, thermionic ion sources
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 本発明は、高輝度でかつ点状のイオンビームが得られる
液体硼素（Ｂ）含有金属イオン源に関する。The present invention relates to a liquid boron (B) -containing metal ion source capable of obtaining a spot-like ion beam with high brightness.
液体金属を用いたイオンビームは、従来の電子ビーム露
光のサブミクロンの微細加工が限界であるのに対して、
ナノメーターの微細加工が可能であり、大いに注目され
ている。また、マスクレスイオン注入、ミーリング、Ｘ
線マスクの修正用等に応用が可能である。In the ion beam using liquid metal, the sub-micron fine processing of conventional electron beam exposure is the limit, whereas
Nano-scale microfabrication is possible, and it has received much attention. Also, maskless ion implantation, milling, X
It can be applied to repair line masks.
これらの用途のうち、イオン注入用には、B,As,P,Si,B
e,など多種類のイオン源が必要である。従来のGa金属イ
オン源は、タングステン線の先端を電解研磨により尖ら
せたエミツターが使用されている。この場合、Gaの融点
が30℃と低いので、100〜200℃でイオンビームを発生で
きる。Of these applications, B, As, P, Si, B are used for ion implantation.
Many types of ion sources such as e are required. The conventional Ga metal ion source uses an emitter in which the tip of a tungsten wire is sharpened by electrolytic polishing. In this case, since the melting point of Ga is as low as 30 ° C, an ion beam can be generated at 100 to 200 ° C.
従つて、タングステンエミツターとGaの反応も起こら
ず、長期間安定に使用できる。Therefore, the reaction between the tungsten emitter and Ga does not occur, and it can be used stably for a long time.
一方、前記した各種のイオン源を含んだ金属の場合、融
点も高く、反応性が激しいので、例えばタングステンエ
ミツターを使用すると、極端な場合数秒で反応が起こ
り、安定したイオンビームが得られない。特に、Ｂを含
んだ合金の場合に、この現象が顕著である。この他、エ
ミツターに要求される性能としては、（１）液体金属と
の濡れが良いこと、（２）密度が高く、先端部に気泡や
欠陥を含まないこと、（３）機械的強度が大で、熱的電
気的衝撃で先端がかけないこと、（４）導電性であるこ
と、（５）リザーバ及びヒーターとの反応がないことな
どである。On the other hand, in the case of the metal containing the above-mentioned various ion sources, the melting point is high and the reactivity is high. For example, when a tungsten emitter is used, a reaction occurs in a few seconds in an extreme case and a stable ion beam cannot be obtained. . This phenomenon is particularly remarkable in the case of an alloy containing B. In addition, as the performance required for the emitter, (1) good wetting with liquid metal, (2) high density, no bubbles or defects at the tip, (3) high mechanical strength Then, the tip should not be hit by thermal and electrical shock, (4) it should be conductive, and (5) it should not react with the reservoir and heater.
エミツターの材質としては、従来のＷの他に、Ti,Zr,H
f,V,Nb,Taの炭化物、窒化物、二硼化物、原子番号57か
ら70までの希土類元素の六硼化物または炭素（特開昭57
−132632号公報、以下公知例１という）や、シリコンカ
ーバイド（SiC）（特開昭59−31542号公報、以下公知例
２という）やBNとTiB2の複合物（特開昭60−1717号公
報、以下公知例３という）等が提案されている。公知例
１には、H2,He,Ar,O2ガス及びGa,In,Bi,AuPbと前記した
炭化物、窒化物、硼化物との相互作用が少なく、かつ金
属との濡れが良いこと、 公知例２には、ＢまたはAlなど反応性の大きい元素を含
む合金用に、グラツシーカーボンよりも濡れが良く、耐
食性も優れているエミツター材料としてSiCが良いとい
うこと、 公知例３には、Al金属に適したエミツター材料として、
TiB2,CrB2の硼化物、TiCの炭化物、TiB2−BNの複合物が
あげられ、これらの中で特にTiB2−BN系が、Alとの濡れ
及び耐食性の点で優れていることが示されている。Besides the conventional W, the material of the emitter is Ti, Zr, H
Carbides, nitrides, diborides of f, V, Nb, Ta, hexaborides of rare earth elements with atomic numbers 57 to 70, or carbon (JP-A-57
-132632, hereinafter referred to as known example 1), silicon carbide (SiC) (JP-A-59-31542, hereinafter referred to as known example 2) and a composite of BN and TiB 2 (JP-A-60-1717). Gazette, hereinafter referred to as known example 3) and the like have been proposed. In the known example 1, there is little interaction between H 2 , He, Ar, O 2 gas and Ga, In, Bi, AuPb and the above-mentioned carbides, nitrides and borides, and good wetting with metal, In the known example 2, for an alloy containing a highly reactive element such as B or Al, SiC is good as an emitter material having better wettability than glassy carbon and excellent corrosion resistance, and in the known example 3, As an emitter material suitable for Al metal,
TiB 2 , borides of CrB 2 , carbides of TiC, TiB 2 -BN composites can be mentioned, among them, especially TiB 2 -BN system is superior in terms of wetting with Al and corrosion resistance. It is shown.
しかし、これらの公知例の技術ではＢ含有合金に対し使
用できる可能性のあるエミツター材料としてSiCがある
が、SiCは比抵抗が200Ωcmと大きいので、エミツター材
料としては使用できない。However, although SiC is a potential emitter material that can be used for B-containing alloys in these known examples, SiC cannot be used as an emitter material because it has a large specific resistance of 200 Ωcm.
Ti,Zr,Hf,V,Nb,Taの周期律表第IVa族、及び第Va族の硼
化物、炭化物、窒化物はいづれも融点が3000℃近くであ
り、フローテイングゾーン法での良質な単結晶化が難し
い。また、ホツトプレス法でも気孔率10％以下の成型体
を作ることは困難である。従つて、これらの単結晶又は
焼結体を加工して作つたエミツターは、歩留り良く先端
曲率半径１〜２μｍに加工することが著しく困難であつ
た。Borates, carbides and nitrides of Group IVa and Va of the periodic table of Ti, Zr, Hf, V, Nb and Ta all have melting points close to 3000 ° C and are of good quality in the floating zone method. Single crystallization is difficult. Further, it is difficult to make a molded product having a porosity of 10% or less even by the hot press method. Therefore, it has been extremely difficult to process the single crystal or the sintered body produced by processing these single crystals or sintered bodies to a tip radius of curvature of 1 to 2 μm with good yield.
また、LaB6をはじめとするランタノイドの六硼化物は、
電子放射材料として、さらにその製法及び加工法が知ら
れているが、Ｂ含有金属、特にNi−Ｂ系の合金と反応し
やすく、本目的のエミツター材料には適さない。Also, lanthanoid hexaborides such as LaB 6 are
As an electron emitting material, its manufacturing method and processing method are further known, but it is not suitable for the purpose of the emitter material because it easily reacts with a B-containing metal, particularly a Ni—B alloy.
（問題点を解決するための手段） 本発明は硼素含有合金を保持すると共に先端が針状であ
るエミツターチツプを具えたリザーバとヒーターを介し
てエミツターチツプに電界をかけイオンを引出す電極と
を接続した液体硼素含有合金のイオン源構造体におい
て、前記エミツターチツプがクロム、モリブデン、タン
グステンから選ばれた少なくとも１種の元素の硼化物の
成形体から成ることを特徴とする液体硼素含有合金イオ
ン源構造体である。(Means for Solving the Problems) The present invention relates to a liquid which holds a boron-containing alloy and which is connected to an electrode for drawing an ion by applying an electric field to the emitter chip through a heater and a reservoir equipped with an emitter chip having a needle-like tip. A boron-containing alloy ion source structure, characterized in that the emitter chip comprises a molded body of a boride of at least one element selected from chromium, molybdenum, and tungsten. .
以下さらに本発明を詳しく説明する。The present invention will be described in more detail below.
本発明でいうＢ含有合金とは、Ni−B,Ni−Pd−B,Pt−B,
Au−Si−B,Ni−Au−Si−Ｂ、Pd−Ｂ、Pd−Pt−Ｂ、Pd−
Pt−Ｂ−Siなど、Ｂを含有する低融点合金であり、この
他、In,As,Pなどを含んでも良い。The B-containing alloy in the present invention means Ni-B, Ni-Pd-B, Pt-B,
Au-Si-B, Ni-Au-Si-B, Pd-B, Pd-Pt-B, Pd-
It is a low melting point alloy containing B such as Pt-B-Si, and may also contain In, As, P and the like.
エミツターの材質は、Cr,Mo及びＷから選ばれた少なく
とも１種類の元素からなる硼化物からなり、その硼化物
にあつては、CrB,CrB2,MoB2,Mo2B5,W2B5などがあげら
れ、金属元素とＢ元素の比は定比、不定比を問わない。
また、前記した化合物の固溶もしくは混晶であつても良
い。エミツターチツプは、必要に応じてバインダーとし
て、Fe,Ni,Coを少量添加して、100kg/cm2以上の圧力で
成型し、その温度範囲は1600〜2100℃で焼成した焼結体
か、100kg/cm2以上の加圧下で1600〜2100℃の温度範囲
でホツトプレス成型した成型体またはフローテイングゾ
ーン法等で作成した単結晶を切断加工し、先端を機械研
磨又は電解研磨で先端曲率半径が１〜２μｍ以下になる
様に加工する。また、あらかじめ先端曲率半径１〜２μ
ｍに研磨したW,Ta,Mo等の高融点金属成形体に、前記し
たCr,Mo及びＷから選ばれた少なくとも１種類の元素か
らなる硼化物をCVD法又は溶融塩電解法、プラスマ溶射
法等で薄く被覆しても良い。The material of the emitter is a boride made of at least one element selected from Cr, Mo and W. For the boride, CrB, CrB 2 , MoB 2 , Mo 2 B 5 , W 2 B 5, etc., and the ratio between the metal element and the B element may be either stoichiometric or non-stoichiometric.
Further, it may be a solid solution or a mixed crystal of the above-mentioned compounds. The Emitter Chip, if necessary, as a binder, with a small amount of Fe, Ni, Co added, is molded at a pressure of 100 kg / cm 2 or more, and the temperature range is 1600 to 2100 ° C. or a sintered body or a sintered body. A press-molded body under pressure of 1 cm to 2100 ° C under a pressure of cm 2 or more, or a single crystal created by the floating zone method or the like is cut, and the tip has a radius of curvature of 1 to 1 by mechanical polishing or electrolytic polishing. Process so that the thickness is 2 μm or less. In addition, the tip radius of curvature is 1-2 μ in advance.
A boride composed of at least one element selected from the above-mentioned Cr, Mo and W is added to a high melting point metal compact such as W, Ta, Mo polished to m by the CVD method, the molten salt electrolysis method or the plasma spraying method. You may coat thinly with etc.
リザーバは、Ta等の加工しやすい高融点金属を用いて、
必要により、表面に前記した方法で、硼化物を被覆す
る。リザーバの形状は実質的に溶融合金を保持されると
ともにエミツターに該溶融金属を安定に供給できる構造
であれば良い。The reservoir uses a refractory metal such as Ta that is easy to process,
If necessary, the surface is coated with boride by the method described above. The shape of the reservoir may be any structure as long as it substantially holds the molten alloy and can stably supply the molten metal to the emitter.
ヒーターは、w,Ta等の幸融点金属線を、リザーバまたは
エミツターの一部にスポツト溶接等で接合する。また、
グラツシーカーボンもしくは熱分解カーボン等の炭素質
ヒーターを、リザーバまたエミツターの一部に接合して
も良い。以上説明した方法により第１図に示すようなイ
オン源構造体が得られる。For the heater, a metal wire having a good melting point such as w or Ta is joined to a part of the reservoir or the emitter by spot welding or the like. Also,
A carbonaceous heater such as glassy carbon or pyrolytic carbon may be joined to a part of the reservoir or the emitter. The ion source structure as shown in FIG. 1 is obtained by the method described above.
実施例１ 温度1900℃、圧力150kg/cm230分間のホツトプレス条件
で、CrB2,Mo2B5,W2B5の成型体を作成した。各々の相対
密度は95％以上であつた。これを0.5×0.5×3mmに切断
し、先端の円錐角30゜、先端曲率半径２μｍに機械研磨
してエミツターチツプを作成した。これを第２図に示す
幅0.7、長さ６、厚さ0.1mmのTa板７の中央部に、該チツ
プ１の底部に電子ビーム溶接し、第３図に示す様に、Ta
板７を折り曲げてリザーバを作成した。Example 1 A molded body of CrB 2 , Mo 2 B 5 , and W 2 B 5 was prepared under hot press conditions of a temperature of 1900 ° C. and a pressure of 150 kg / cm 2 for 30 minutes. The relative density of each was 95% or more. This was cut into 0.5 × 0.5 × 3 mm and mechanically polished to a cone angle of 30 ° and a tip curvature radius of 2 μm to prepare an emitter chip. This was electron-beam welded to the center of a Ta plate 7 having a width of 0.7, a length of 6 and a thickness of 0.1 mm shown in FIG. 2 and the bottom of the chip 1, and as shown in FIG.
The plate 7 was bent to create a reservoir.
次いで、リザーバの底部に、径0.18mmのＷ線をスポツト
溶接して、第１図に示すような液体金属イオン源を作成
した。また、１×10-6Torrの真空下で、BNルツボ中にN
i,Pd,B（40,40,20）の合金を溶融し、この溶融合金中に
エミツターチツプを加熱しながら浸漬し、これをエミツ
ターチツプに沿つて上昇させ、エミツターチツプとリザ
ーバの間に合金を10mg溜めた。この様にして作成した液
体合金イオン源のエミツターチツプ温度950℃とし、イ
オンビームの取出しを行つたところ、引出し電圧7.5kv
で、100μＡのイオンビームが、200時間に渡り安定に得
られた。Then, a W wire having a diameter of 0.18 mm was spot welded to the bottom of the reservoir to prepare a liquid metal ion source as shown in FIG. Also, under a vacuum of 1 × 10 -6 Torr, N in the BN crucible
The alloy of i, Pd, B (40, 40, 20) is melted and the emmitter chip is immersed in this molten alloy while being heated, and this is raised along the emmitter chip to collect 10 mg of alloy between the emmitter chip and the reservoir. It was When the emission temperature of the liquid alloy ion source created in this way was set to 950 ° C and the ion beam was extracted, the extraction voltage was 7.5 kv.
Then, an ion beam of 100 μA was stably obtained for 200 hours.
比較のために、TiB2のホツトプレス焼結体（温度2000
℃、圧力150kg/cm2、30分間）で作成したエミツターチ
ツプで前記したと同様の液体金属イオン源を作成した。For comparison, a hot-pressed sintered body of TiB 2 (temperature 2000
A liquid metal ion source similar to that described above was prepared using an emitter chip prepared at a temperature of 150 ° C. and a pressure of 150 kg / cm 2 for 30 minutes.
エミツターチツプの温度は1050℃の時にイオンビームの
放出が起こつた。20時間で溶融合金が蒸発して無くなつ
た。TiB2のエミツターチツプの場合、温度を高くしない
と、表面に溶融金属が均一に濡れないため、イオンビー
ムが引出せずまた温度が高いために、合金の蒸発損失が
多かつた。Ion beam emission occurred when the temperature of the emitter chip was 1050 ℃. After 20 hours, the molten alloy had evaporated and disappeared. In the case of the TiB 2 emitter chip, unless the temperature was raised, the molten metal did not uniformly wet the surface, the ion beam could not be extracted, and the temperature was high, so that the evaporation loss of the alloy was large.
実施例２ アルゴンガス15kg/cm2の雰囲気下、高周波誘導加熱によ
るフローテイングゾーン方で、CrB2,Mo2B5,W2B5の単結
晶を育成した。実施例１と同様の方法で、Ni,Pd,B,Be
（30,60,8,2）の合金を10mg溜めた液体金属イオン源を
作成した。エミツターの温度850℃の時、引出し電圧5k
v、100μＡを1000時間に渡つて安定に得ることができ
た。Example 2 A single crystal of CrB 2 , Mo 2 B 5 , and W 2 B 5 was grown in a floating zone by high-frequency induction heating in an atmosphere of argon gas of 15 kg / cm 2 . In the same manner as in Example 1, Ni, Pd, B, Be
A liquid metal ion source containing 10 mg of (30,60,8,2) alloy was prepared. When the temperature of the emitter is 850 ℃, the extraction voltage is 5k
It was possible to stably obtain v and 100 μA over 1000 hours.
（発明の効果） Cr,Mo,Wの硼化物のエミツターチツプを用いているの
で、Ｂ含有金属と濡れが良く反応しにくいので長時間安
定に高輝度のイオンビームが得られる利点がある。(Effects of the Invention) Since the emitter chip of a boride of Cr, Mo, W is used, it is difficult to react well with the B-containing metal so that there is an advantage that an ion beam of high brightness can be stably obtained for a long time.
図面は本発明の実施例を示すもので、第１図は液体金属
イオン源構造体の説明図、第２図及び第３図は、その製
造工程の説明図である。 符号 1;エミツターチツプ、2;リザーバ 3;溶融金属、4;ヒーター 5;絶縁碍子、6;電極 7;タンタル板The drawings show an embodiment of the present invention. FIG. 1 is an explanatory view of a liquid metal ion source structure, and FIGS. 2 and 3 are explanatory views of the manufacturing process thereof. Reference numeral 1; Emitter chip, 2; Reservoir 3; Molten metal, 4; Heater 5; Insulator, 6; Electrode 7; Tantalum plate
Claims (1)
であるエミツターチツプを具えたリザーバとヒーターを
介してエミツターチツプに電界をかけイオンを引出す電
極とを接続した液体硼素含有合金のイオン源構造体にお
いて、前記エミツターチツプがクロム、モリブデン、タ
ングステンから選ばれた少なくとも１種の元素の硼化物
の成形体から成ることを特徴とする液体硼素含有合金イ
オン源構造体。1. An ion source structure of a liquid boron-containing alloy, which holds a boron-containing alloy and is connected to a reservoir equipped with an emitter chip having a needle-like tip and an electrode for drawing an ion by applying an electric field to the emitter via a heater. 2. The liquid boron-containing alloy ion source structure according to claim 1, wherein the emitter chip is a molded body of a boride of at least one element selected from chromium, molybdenum and tungsten.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60077306A JPH0752623B2 (en) | 1985-04-11 | 1985-04-11 | Liquid boron-containing alloy ion source structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60077306A JPH0752623B2 (en) | 1985-04-11 | 1985-04-11 | Liquid boron-containing alloy ion source structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61237328A JPS61237328A (en) | 1986-10-22 |
| JPH0752623B2 true JPH0752623B2 (en) | 1995-06-05 |
Family
ID=13630225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60077306A Expired - Lifetime JPH0752623B2 (en) | 1985-04-11 | 1985-04-11 | Liquid boron-containing alloy ion source structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0752623B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6383264A (en) * | 1986-09-26 | 1988-04-13 | Anelva Corp | Liquid metallic ion source |
| JPH02250238A (en) * | 1989-03-24 | 1990-10-08 | Denki Kagaku Kogyo Kk | Liquid metal ion source |
| JP2517678B2 (en) * | 1989-09-21 | 1996-07-24 | 電気化学工業株式会社 | Liquid metal ion source |
| CN108754079A (en) * | 2018-06-13 | 2018-11-06 | 武汉科技大学 | It is a kind of to promote the heat treatment method that nano-carbide is precipitated in steel containing W alloy |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5846542A (en) * | 1981-09-11 | 1983-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Field emission liquid metal aluminum ion gun and its manufacture |
| JPS6056327A (en) * | 1983-09-07 | 1985-04-01 | Hitachi Ltd | Liquid metal ion product alloy |
-
1985
- 1985-04-11 JP JP60077306A patent/JPH0752623B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61237328A (en) | 1986-10-22 |
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