JPH0761871A - Bonding structure between ceramic substrate and external metal terminal - Google Patents
Bonding structure between ceramic substrate and external metal terminalInfo
- Publication number
- JPH0761871A JPH0761871A JP5234060A JP23406093A JPH0761871A JP H0761871 A JPH0761871 A JP H0761871A JP 5234060 A JP5234060 A JP 5234060A JP 23406093 A JP23406093 A JP 23406093A JP H0761871 A JPH0761871 A JP H0761871A
- Authority
- JP
- Japan
- Prior art keywords
- metal terminal
- external metal
- ceramic substrate
- pad
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Ceramic Products (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】
【構成】セラミックス基板２のパッド部３に外部金属端
子４の一端面を銀銅（Ａｇ−Ｃｕ）系ろう材６にて接合
したものにおいて、パッド部３の接合面の直径をＤ、外
部金属端子４の前記一端面の直径をｄ、パッド部の前記
接合面の中心から前記一端面の中心までの距離をＸとす
るとき、セラミックス基板２の主成分がムライトであっ
て、下記の条件を充足していることを特徴とするセラミ
ックス基板と外部金属端子との接合構造１。 （Ｄ−
ｄ）／２−Ｘ≧０．２５ｍｍ
【効果】接合の信頼性に優れ、しかも生産歩留まりが高
いものである。従って、信号伝搬速度が速く、ＩＣとの
接続性に優れたＩＣパッケージを安定して供給すること
ができる。
(57) [Summary] [Structure] When one end surface of the external metal terminal 4 is joined to the pad portion 3 of the ceramic substrate 2 with the silver-copper (Ag-Cu) brazing material 6, the joint surface of the pad portion 3 is When the diameter is D, the diameter of the one end surface of the external metal terminal 4 is d, and the distance from the center of the bonding surface of the pad portion to the center of the one end surface is X, the main component of the ceramic substrate 2 is mullite. And a bonding structure 1 between a ceramics substrate and an external metal terminal, which satisfies the following conditions. (D-
d) /2-X≧0.25 mm [Effect] The bonding is excellent in reliability and the production yield is high. Therefore, it is possible to stably supply an IC package having a high signal propagation speed and excellent connectivity with an IC.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、セラミックス基板と外
部金属端子との接合構造に関するもので、特に多層配線
基板に形成されたろう付けパッドとリード、ピン等の入
出力端子部材とがろう材にて接合される、ピングリッド
アレイＩＣパッケージに好適に利用され得る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a joining structure between a ceramic substrate and an external metal terminal, and in particular, a brazing pad formed on a multilayer wiring board and an input / output terminal member such as a lead and a pin are used as a brazing material. It can be suitably used for a pin grid array IC package to be joined together.
【０００２】[0002]
【従来の技術】ピングリッドアレイ（ＰＧＡ）等の高密
度ＩＣパッケージは、集積回路ＩＣを搭載するとともに
主面上に縦横に多数配列して形成されたパッド部を備え
る多層配線基板と、この多層配線基板のパッド部に接合
された多数のコバール等からなるＩ／Ｏ（入出力）ピン
等の外部端子部材とで構成されており、場合により更に
その多層配線基板のＩＣ搭載部の周縁部にコバール等か
らなる封止用枠体が接合されている。2. Description of the Related Art A high density IC package such as a pin grid array (PGA) is a multilayer wiring board having an integrated circuit IC mounted thereon and a pad portion formed on the main surface in a large number of rows and columns, and the multilayer wiring board. It is composed of an external terminal member such as an I / O (input / output) pin made of a large number of Kovars or the like joined to the pad portion of the wiring board, and in some cases, it is further provided on the peripheral portion of the IC mounting portion of the multilayer wiring board. A sealing frame body made of Kovar or the like is joined.
【０００３】多層配線基板は、通常アルミナ等を主成分
とするセラミックスからなり、板形状の複数枚の絶縁層
と、各絶縁層の主表面に高融点金属にて形成された各種
配線パターンとを備えている。また、入出力ピン等の外
部金属端子は、例えば直径０．３〜０．４ｍｍ程度の丸
棒状の胴体部先端に、径大の鍔状部が設けられたネイル
（釘）形状をなしており、その鍔状部を接合面としてい
る。そして、セラミックスと外部金属端子との接合強度
は、セラミックス部分の信頼性確保のために、外部金属
端子自体の強度を上回ることが要請されることが非常に
多い。A multilayer wiring board is usually made of ceramics containing alumina as a main component, and comprises a plurality of plate-shaped insulating layers and various wiring patterns formed of refractory metal on the main surface of each insulating layer. I have it. The external metal terminals such as input / output pins have a nail shape in which a collar-shaped portion having a large diameter is provided at the tip of a round bar-shaped body having a diameter of 0.3 to 0.4 mm, for example. , The brim-shaped portion is used as the joint surface. In many cases, the bonding strength between the ceramic and the external metal terminal is required to exceed the strength of the external metal terminal itself in order to secure the reliability of the ceramic portion.
【０００４】[0004]
【発明が解決しようとする課題】ところで、近年、信号
伝播速度を速くすることと、集積回路ＩＣの接続不良及
び剥離を未然に防止することのために、上記のような高
密度ＩＣパッケージの多層基板中の絶縁層として、ムラ
イト質セラミックスを用いようとする提案がなされてい
る（特公昭５７−２３６７２号公報，特開昭５５−１３
９７０９号公報）。By the way, in recent years, in order to increase the signal propagation speed and prevent connection failures and peeling of integrated circuit ICs, the above-mentioned multi-layered high density IC packages are used. A proposal has been made to use mullite ceramics as an insulating layer in a substrate (Japanese Patent Publication No. 57-23672, Japanese Patent Laid-Open No. 55-13).
9709).
【０００５】すなわち、電気信号の伝播遅延時間は、配
線導体をとりまく絶縁層の誘電率の平方根に比例するの
で、比誘電率の小さいムライトを絶縁層の主成分として
信号の高速化を達成しようとするのである。また、集積
回路ＩＣが半導体シリコンよりなるものの場合、シリコ
ンの熱膨張係数が３．５×１０-6／℃であるから、これ
と熱膨張差の小さいムライトをＩＣ搭載部の絶縁層の主
成分とすることにより、ＩＣ接続部分の熱応力を軽減し
ようとするのである。That is, since the propagation delay time of an electric signal is proportional to the square root of the dielectric constant of the insulating layer surrounding the wiring conductor, mullite having a small relative dielectric constant is used as the main component of the insulating layer to achieve high speed signals. To do. Further, when the integrated circuit IC is made of semiconductor silicon, the thermal expansion coefficient of silicon is 3.5 × 10 −6 / ° C., and thus mullite having a small thermal expansion difference is used as the main component of the insulating layer of the IC mounting portion. By doing so, the thermal stress of the IC connecting portion is reduced.
【０００６】しかし、ムライト質焼結体よりなる多層配
線基板に従来のアルミナ基板に対するのと同じ要領で外
部金属端子を接合した構造のものを引っ張り強度試験に
かけると、低強度でセラミックス部分において破壊する
場合が頻繁に生じた。従って、パッケージ全体の信頼性
に欠けるとともに歩留まりを悪くしていた。However, when a tensile strength test was conducted on a multilayer wiring board made of a mullite sintered body and external metal terminals were joined in the same manner as for a conventional alumina board, the ceramic portion was broken at low strength. It often happened. Therefore, the reliability of the entire package is poor and the yield is low.
【０００７】本発明の第１の目的は、上記従来の課題を
解決し、接合の信頼性に優れたムライト質セラミックス
基板と外部金属端子との接合構造を提供することにあ
る。第２の目的は、接合体の歩留まりを向上させること
にある。A first object of the present invention is to solve the conventional problems described above and to provide a bonding structure of a mullite ceramics substrate and an external metal terminal, which has excellent bonding reliability. The second purpose is to improve the yield of the bonded body.
【０００８】[0008]
【課題を解決するための手段】上記目的達成のために本
発明接合構造は、セラミックス基板のパッド部に外部金
属端子の一端面を銀銅（Ａｇ−Ｃｕ）系ろう材にて接合
したものにおいて、パッド部の接合面の直径をＤ、外部
金属端子の前記一端面の直径をｄ、パッド部の前記接合
面の中心から前記一端面の中心までの距離をＸとすると
き、セラミックス基板の主成分がムライトであって、下
記の条件を充足していることを特徴とする。To achieve the above object, the joining structure of the present invention is one in which one end surface of an external metal terminal is joined to a pad portion of a ceramic substrate with a silver-copper (Ag-Cu) brazing material. , D is the diameter of the bonding surface of the pad portion, d is the diameter of the one end surface of the external metal terminal, and X is the distance from the center of the bonding surface of the pad portion to the center of the one end surface. The ingredient is mullite, and the following conditions are satisfied.
【０００９】（Ｄ−ｄ）／２−Ｘ≧０．２５ｍｍ ここで、パッド部の接合面の中心とは、パッド部の全面
積がろう材に濡れて接合に関与しているときは、その面
全体の中心のことをいう。また、その周縁が絶縁材料に
て被覆されているために被覆部分にろう材が濡れないと
きは、被覆部分を除いた面の中心のことをいう。そし
て、上記不等式の左辺は、パッド部と外部金属端子との
間で、ろう材によって形成されるメニスカス部分の最小
幅を示す。(D-d) /2-X≧0.25 mm Here, the center of the bonding surface of the pad portion means that when the entire area of the pad portion is wetted by the brazing material and is involved in the bonding, The center of the entire surface. In addition, when the brazing material does not get wet in the coated portion because its peripheral edge is coated with an insulating material, it means the center of the surface excluding the coated portion. The left side of the above inequality indicates the minimum width of the meniscus portion formed by the brazing material between the pad portion and the external metal terminal.
【００１０】[0010]
【作用効果】ろう付け時には、外部金属端子の接合端面
からはみ出たろう材が、その縦断面形状において図１に
示すように外方に向かって漸減する円錐状となる。この
円錐状に湾曲した表面がメニスカスである。そして、パ
ッド部の接合面の中心と金属端子の端面の中心とが一致
しているとき（Ｘ＝０）、メニスカスの幅は、一定値
（Ｄ−ｄ）／２となる。[Advantageous Effects] During brazing, the brazing material protruding from the joint end surface of the external metal terminal has a conical shape in which the longitudinal cross-sectional shape gradually decreases outward as shown in FIG. This conically curved surface is the meniscus. Then, when the center of the bonding surface of the pad portion and the center of the end surface of the metal terminal match (X = 0), the width of the meniscus becomes a constant value (D−d) / 2.
【００１１】しかし、Ｘ≠０のときのメニスカスの幅
は、金属端子の位置がずれた側で最小値［（Ｄ−ｄ）／
２−Ｘ］となり、その反対側で最大値［（Ｄ−ｄ）／２
＋Ｘ］となる。そして、ろう付け部分に引っ張り応力を
かけると接着力の弱いところからパッドが抉れる。However, the width of the meniscus when X ≠ 0 is the minimum value [(D−d) /
2-X] and the maximum value [(D-d) / 2 on the opposite side]
+ X]. Then, when a tensile stress is applied to the brazed portion, the pad is removed from the place where the adhesive strength is weak.
【００１２】そこで、種々実験の結果、セラミックス基
板の主成分がムライトである場合、ろう材によって形成
されるメニスカス部分の最小幅が０．２５ｍｍより小さ
いと、パッドの面積がたとえ大きくても低い引っ張り強
度で、パッドが抉れることが判った。従って、ろう付け
部分の接合強度は、メニスカス幅の最小値に依存する。Therefore, as a result of various experiments, when the main component of the ceramic substrate is mullite, if the minimum width of the meniscus portion formed by the brazing material is smaller than 0.25 mm, even if the pad area is large, the tensile strength is low. It was found that the pad was gouged with strength. Therefore, the joint strength of the brazed portion depends on the minimum value of the meniscus width.
【００１３】セラミックス基板が主としてアルミナより
なる場合、アルミナ焼結体の強度が高いので、外部金属
端子との接合部で熱膨張差による応力が発生してもセラ
ミックス基板の破壊が起こりにくい。従って、通常の製
造条件においてメニスカス幅を考慮する必要がない。When the ceramic substrate is mainly made of alumina, since the strength of the alumina sintered body is high, the ceramic substrate is less likely to be broken even if a stress due to a difference in thermal expansion occurs at the joint with the external metal terminal. Therefore, it is not necessary to consider the meniscus width under normal manufacturing conditions.
【００１４】これに対して、ムライト焼結体はアルミナ
焼結体よりも強度が弱い。加えて、外部金属端子との熱
膨張差もアルミナ焼結体の場合よりも大きい。従って、
ろう付け部分で破壊し易いことから、アルミナとは異な
る配慮が必要と考えられるのである。On the other hand, the strength of the mullite sintered body is weaker than that of the alumina sintered body. In addition, the difference in thermal expansion with the external metal terminal is also larger than that of the alumina sintered body. Therefore,
Since it is easy to break at the brazed part, it is thought that it is necessary to consider it differently from alumina.
【００１５】銀銅（Ａｇ−Ｃｕ）系ろう材の組成は、Ａ
ｇ／Ｃｕ重量比が５０／５０〜８７／１３の範囲に属す
るものが良い。この範囲よりＡｇが少なくても多くても
液相温度が高くなって９００℃より高い温度でろう付け
しなければならず、作業性が悪くなるからである。ま
た、銀銅（Ａｇ−Ｃｕ）系ろう材は、その特性を逸脱し
ない限り、例えばインジウムＩｎのようにＡｇＣｕ以外
の第三の成分を少量含むものであっても良い。The composition of the silver-copper (Ag-Cu) brazing material is A
It is preferable that the weight ratio of g / Cu belongs to the range of 50/50 to 87/13. This is because if the Ag content is lower or higher than this range, the liquidus temperature becomes high and brazing must be performed at a temperature higher than 900 ° C., resulting in poor workability. The silver-copper (Ag—Cu) -based brazing material may contain a small amount of a third component other than AgCu, such as indium In, as long as it does not deviate from its characteristics.
【００１６】尚、パッド部の周縁が絶縁材料で被覆され
ていると、パッド部周端へのろう材の流れがせき止めら
れる。その結果、応力の集中し易いパッド部周端への更
なる応力集中を抑え、端子部の破壊を防止することがで
きる。従って、パッド部の周縁が絶縁材料で被覆されて
いるのが望ましい。When the peripheral edge of the pad portion is covered with an insulating material, the flow of the brazing material to the peripheral edge of the pad portion is stopped. As a result, it is possible to prevent further stress concentration on the peripheral edge of the pad portion where stress is likely to concentrate, and prevent the terminal portion from being broken. Therefore, it is desirable that the periphery of the pad portion be covered with the insulating material.
【００１７】[0017]
［本発明接合構造］本発明接合構造の一実施例を図面と
ともに説明する。図１は、本発明接合構造を備えたセラ
ミックス基板とネイルピンとの接合部を示す断面図であ
る。[Joining Structure of the Present Invention] An embodiment of the joining structure of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view showing a joint portion between a ceramic substrate having a joint structure of the present invention and a nail pin.
【００１８】接合構造１は、ムライト７５重量％、密度
２．９ｇ／ｃｍ3のセラミックス基板２と、このセラミ
ックス基板２の表面に形成された金属化面からなるパッ
ド３と、パッド３に接合されたネイルピン４とで構成さ
れている。そして、セラミックス基板２の表面は、パッ
ド３の大部分を除いてセラミックス基板２と同質で厚さ
１５μｍの絶縁膜５で覆われている。The joining structure 1 is joined to the ceramic substrate 2 having a mullite content of 75% by weight and a density of 2.9 g / cm 3 , the pad 3 having a metallized surface formed on the surface of the ceramic substrate 2, and the pad 3. Nail pin 4 and The surface of the ceramic substrate 2 is covered with an insulating film 5 having the same quality as the ceramic substrate 2 and a thickness of 15 μm except for most of the pads 3.
【００１９】パッド３は、厚さ２０μｍのタングステン
からなる第１層及び厚さ２μｍのニッケルからなる第２
層の２層構造（但し、絶縁膜５の直下は第２層が存在し
ない。）で、直径１．５５〜２．０５ｍｍの大きさとな
っており、その周縁０．１５ｍｍが絶縁膜５で覆われて
いるので、ネイルピン４との接合に関与している部分の
大きさは直径１．４〜１．９ｍｍである。The pad 3 comprises a first layer made of tungsten having a thickness of 20 μm and a second layer made of nickel having a thickness of 2 μm.
It has a two-layer structure of layers (however, the second layer does not exist immediately below the insulating film 5) and has a diameter of 1.55 to 2.05 mm, and its peripheral edge of 0.15 mm is covered with the insulating film 5. Therefore, the size of the portion involved in the joining with the nail pin 4 is 1.4 to 1.9 mm in diameter.
【００２０】ネイルピン４は、本発明接合構造に用いら
れる外部金属端子であり、全長４．５ｍｍのコバール
（ＫＯＶＡＲ）製で、直径０．４５ｍｍの胴体部とその
一端に一体的に連なる直径０．７ｍｍ、厚さ０．３ｍｍ
の鍔状部とからなる。パッド３とネイルピン４とは、所
定量の銀ー銅ろう（Ａｇ８５重量％）６にて接合されて
いる。尚、ネイルピン４の材質は、４２アロイ、アロイ
１９４（Ｃｕ合金）でも良い。The nail pin 4 is an external metal terminal used in the joining structure of the present invention, is made of KOVAR having a total length of 4.5 mm, and has a diameter of 0.45 mm and a diameter of 0. 7mm, thickness 0.3mm
It consists of a collar part. The pad 3 and the nail pin 4 are joined with a predetermined amount of silver-copper brazing material (Ag 85% by weight) 6. The material of the nail pin 4 may be 42 alloy or alloy 194 (Cu alloy).
【００２１】［本発明接合構造を備えた接合体の製造方
法］このような接合体の製造方法を説明する。まず、ム
ライト等のセラミックス粉末を主成分とするグリーンシ
ートの表面に、タングステンＷのペーストを所定パター
ンにスクリーン印刷して、各パッドのパターンを形成す
る。次に同じ組成のセラミックス粉末を主成分とする絶
縁ペーストをグリーンシートの表面に印刷する。そし
て、これらグリーンシートが１５００℃前後の高温で焼
成され、Ｎｉ鍍金が施されてセラミックス基板２とな
る。[Manufacturing Method of Bonded Body Having Bonding Structure of the Present Invention] A manufacturing method of such a bonded body will be described. First, a paste of tungsten W is screen-printed in a predetermined pattern on the surface of a green sheet containing ceramic powder such as mullite as a main component to form a pattern of each pad. Next, an insulating paste containing ceramic powder of the same composition as a main component is printed on the surface of the green sheet. Then, these green sheets are fired at a high temperature of around 1500 ° C. and plated with Ni to form the ceramic substrate 2.
【００２２】別途、前記ネイルピン４を準備し、その鍔
状部端面に０．３ｍｇのＡｇ−Ｃｕろう６を付けてお
く。前記セラミックス基板２のパッド３にネイルピン４
をＡｇ−Ｃｕろう６にて炉設定温度９００℃、窒素−水
素混合ガス中で接合する。これにて接合構造１が完成す
る。Separately, the nail pin 4 is prepared and 0.3 mg of Ag—Cu solder 6 is attached to the end face of the collar portion. The nail pin 4 is attached to the pad 3 of the ceramic substrate 2.
Are joined with Ag-Cu braze 6 in a nitrogen-hydrogen mixed gas at a furnace setting temperature of 900 ° C. This completes the bonded structure 1.
【００２３】［実験及び評価］上記接合構造１におい
て、ネイルピン４の寸法及び形状を一定値とし、接合に
関与するパッド３の面積を種々変えたものにつき、ネイ
ルピン４の遊端部を図２に示すように４５°方向に引っ
張り、接合強度を測定するとともに破壊モードを観察し
た。パッド３の中心からネイルピン４の中心までの距離
すなわち位置ズレ量Ｘ（横軸）と接合強度（縦軸）との
関係を図３に打点した。[Experiment and Evaluation] In the joint structure 1 described above, the size and shape of the nail pin 4 were set to constant values, and the area of the pad 3 involved in the joint was variously changed. The free end portion of the nail pin 4 is shown in FIG. As shown, it was pulled in the direction of 45 °, the joint strength was measured, and the fracture mode was observed. The relationship between the distance from the center of the pad 3 to the center of the nail pin 4, that is, the positional deviation amount X (horizontal axis) and the bonding strength (vertical axis) is plotted in FIG.
【００２４】この図から、各々のパッド面積において、
位置ズレ量が一定値までは安定した接合強度を示すが、
一定値を越えると位置ズレ量が大きくなるにつれて接合
強度が低下することが判る。尚、パッド３の直径が１．
９ｍｍのものについても同様に測定したが同じ傾向を示
したので打点を省略した。更にミリメートルオーダー
で、パッド３の接合面の直径をＤ、ネイルピン４の鍔状
部端面の直径をｄ、位置ズレ量をＸとし、メニスカス幅
の最小値［（Ｄ−ｄ）／２−Ｘ］と接合強度との関係を
打点し、図４に示した。From this figure, in each pad area,
Stable bonding strength is shown up to a certain amount of positional deviation,
It can be seen that when the value exceeds a certain value, the bonding strength decreases as the amount of positional deviation increases. The diameter of the pad 3 is 1.
The same measurement was performed for the 9 mm taper, but the same tendency was exhibited, and thus the dot was omitted. Further, in millimeter order, the diameter of the joint surface of the pad 3 is D, the diameter of the end face of the collar portion of the nail pin 4 is d, and the positional deviation amount is X, and the minimum value of the meniscus width [(D-d) / 2-X]. The relationship between the bond strength and the bonding strength is plotted and shown in FIG.
【００２５】この図から、パッド３の直径にかかわら
ず、メニスカス幅の最小値が０．２５ｍｍ以上であると
きに、常に接合強度が５ｋｇｆ以上となることが判っ
た。そして、接合強度５ｋｇｆは、ネイルピン自体に要
求される機械的強度に相当する。従って、製品を設計す
る段階で、メニスカス幅の最小値が０．２５ｍｍとなる
ようにパッド径、ネイルピン径、寸法公差及び治具公差
を定めることにより、安定的に接合強度の高いＩＣパッ
ケージを製造することが可能となる。また、製品の品質
検査工程において、メニスカス幅の最小値を検査するこ
とにより、接合不良品の供給を未然に防止することがで
きる。From this figure, it was found that regardless of the diameter of the pad 3, the bonding strength is always 5 kgf or more when the minimum value of the meniscus width is 0.25 mm or more. The joint strength of 5 kgf corresponds to the mechanical strength required for the nail pin itself. Therefore, by designing the pad diameter, nail pin diameter, dimensional tolerance, and jig tolerance so that the minimum meniscus width will be 0.25 mm during the product design stage, a stable IC package with high joint strength can be manufactured. It becomes possible to do. In addition, by inspecting the minimum value of the meniscus width in the product quality inspection process, it is possible to prevent supply of defective products.
【００２６】[0026]
【発明の効果】この発明のムライトセラミックス基板と
外部金属端子との接合構造は、以上の構成を備えるの
で、接合の信頼性に優れ、しかも生産歩留まりが高いも
のである。従って、信号伝搬速度が速く、ＩＣとの接続
性に優れたＩＣパッケージを安定して供給することがで
きる。Since the joining structure of the mullite ceramics substrate and the external metal terminal of the present invention has the above-mentioned structure, the joining reliability is excellent and the production yield is high. Therefore, it is possible to stably supply an IC package having a high signal propagation speed and excellent connectivity with an IC.
【図１】セラミックス基板と外部金属端子との接合構造
を示す要部断面図である。FIG. 1 is a sectional view of an essential part showing a joint structure between a ceramics substrate and an external metal terminal.
【図２】接合強度を測定する方法を説明する図である。FIG. 2 is a diagram illustrating a method of measuring the bonding strength.
【図３】位置ズレ量Ｘに対して接合強度を打点したグラ
フである。FIG. 3 is a graph in which the bonding strength is plotted against the positional deviation amount X.
【図４】メニスカス量の最小値［（Ｄ−ｄ）／２−Ｘ］
に対して接合強度を打点したグラフである。FIG. 4 is a minimum meniscus value [(D−d) / 2−X].
Is a graph in which the bonding strength is plotted against.
１ 接合構造 ２ セラミックス基板 ３ パッド ４ ネイルピン（外部金属端子部材） 1 bonding structure 2 ceramics substrate 3 pad 4 nail pin (external metal terminal member)
Claims (1)
端子の一端面を銀銅（Ａｇ−Ｃｕ）系ろう材にて接合し
たものにおいて、パッド部の接合面の直径をＤ、外部金
属端子の前記一端面の直径をｄ、パッド部の前記接合面
の中心から前記一端面の中心までの距離をＸとすると
き、セラミックス基板の主成分がムライトであって、下
記の条件を充足していることを特徴とするセラミックス
基板と外部金属端子との接合構造。 （Ｄ−ｄ）／２−Ｘ≧０．２５ｍｍ1. A ceramic substrate, wherein one end surface of an external metal terminal is joined to a pad portion of a ceramic substrate with a silver-copper (Ag—Cu) -based brazing material, the diameter of the joint surface of the pad portion is D, and the external metal terminal is When the diameter of the one end face is d and the distance from the center of the bonding face of the pad portion to the center of the one end face is X, the main component of the ceramic substrate is mullite, and the following conditions are satisfied. A structure for joining a ceramics substrate and an external metal terminal. (D-d) /2-X≧0.25 mm
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5234060A JPH0761871A (en) | 1993-08-24 | 1993-08-24 | Bonding structure between ceramic substrate and external metal terminal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5234060A JPH0761871A (en) | 1993-08-24 | 1993-08-24 | Bonding structure between ceramic substrate and external metal terminal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0761871A true JPH0761871A (en) | 1995-03-07 |
Family
ID=16964964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5234060A Pending JPH0761871A (en) | 1993-08-24 | 1993-08-24 | Bonding structure between ceramic substrate and external metal terminal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0761871A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7847393B2 (en) | 1998-12-16 | 2010-12-07 | Ibiden Co., Ltd. | Conductive connecting pins for a package substrate |
| KR102488086B1 (en) * | 2022-06-17 | 2023-01-13 | 주식회사 제스코 | Electrostatic chuck |
| JP2023110741A (en) * | 2022-01-28 | 2023-08-09 | 京セラ株式会社 | Joints, fastening parts, insulators and current introduction terminals |
-
1993
- 1993-08-24 JP JP5234060A patent/JPH0761871A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7847393B2 (en) | 1998-12-16 | 2010-12-07 | Ibiden Co., Ltd. | Conductive connecting pins for a package substrate |
| US7902659B2 (en) | 1998-12-16 | 2011-03-08 | Ibiden Co., Ltd. | Conductive connecting pin and package substrate |
| US8035214B1 (en) | 1998-12-16 | 2011-10-11 | Ibiden Co., Ltd. | Conductive connecting pin for package substance |
| US8110917B2 (en) | 1998-12-16 | 2012-02-07 | Ibiden Co., Ltd. | Package substrate with a conductive connecting pin |
| US8536696B2 (en) | 1998-12-16 | 2013-09-17 | Ibiden Co., Ltd. | Conductive pin attached to package substrate |
| JP2023110741A (en) * | 2022-01-28 | 2023-08-09 | 京セラ株式会社 | Joints, fastening parts, insulators and current introduction terminals |
| KR102488086B1 (en) * | 2022-06-17 | 2023-01-13 | 주식회사 제스코 | Electrostatic chuck |
| KR20230173570A (en) * | 2022-06-17 | 2023-12-27 | 주식회사 제스코 | Electrostatic chuck |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4724472A (en) | Semiconductor device | |
| EP2753159B1 (en) | Laminated sintered ceramic wiring substrate, and semiconductor package containing wiring substrate | |
| JPS6273650A (en) | Electrical part | |
| JP2009074823A (en) | Wiring board for electronic component inspection apparatus and manufacturing method thereof | |
| US6680528B2 (en) | Electronic component and electronic equipment using the same | |
| EP2738799A1 (en) | Multilayer sintered ceramic wiring board, and semiconductor package including wiring board | |
| JP2572823B2 (en) | Ceramic joint | |
| JP3401102B2 (en) | Circuit board and method of manufacturing the same, electronic device package, green sheet | |
| JPH0761871A (en) | Bonding structure between ceramic substrate and external metal terminal | |
| JPH09298252A (en) | Semiconductor package and semiconductor device using the same | |
| JP3539571B2 (en) | Bonding structure between ceramic substrate and external metal terminals | |
| JPH09102560A (en) | External lead pin bonding structure of low temperature fired ceramic substrate | |
| JP2003249598A (en) | Semiconductor element storage package and semiconductor device | |
| JPH05144971A (en) | Structure of chip carrier | |
| JP2002134885A (en) | Circuit board and method of manufacturing the same, electronic device package, green sheet | |
| JP2955736B2 (en) | Multilayer ceramic package for semiconductor device | |
| JP4613410B2 (en) | Manufacturing method of ceramic circuit board | |
| JP2004327945A (en) | Ceramic electronic circuit components | |
| JP2630303B2 (en) | Multilayer wiring board | |
| JPH07130909A (en) | Aluminum nitride multilayer substrate | |
| JPH07101786A (en) | Bonding structure between ceramic substrate and external metal terminal | |
| JP3662910B2 (en) | Aluminum nitride multilayer substrate | |
| JPH09129769A (en) | Ceramic package | |
| JP2000164757A (en) | Package for housing semiconductor element and its mounting structure | |
| JPH06260768A (en) | Ceramic multilayer circuit board |