JPH076895A - Microwave plasma processing equipment - Google Patents
Microwave plasma processing equipmentInfo
- Publication number
- JPH076895A JPH076895A JP5317712A JP31771293A JPH076895A JP H076895 A JPH076895 A JP H076895A JP 5317712 A JP5317712 A JP 5317712A JP 31771293 A JP31771293 A JP 31771293A JP H076895 A JPH076895 A JP H076895A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- microwave
- waveguide
- plasma processing
- plasma generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Plasma Technology (AREA)
Abstract
(57)【要約】
【目的】プラズマ発生室内に安定して均一なガスプラズ
マを生成し、処理の均一性を向上させる。
【構成】マイクロ波を発振する手段1と、マイクロ波を
導波管内で伝播する手段2,3,4と、伝播中のマイク
ロ波を導波管内で分割する手段9,10と、分割された
マイクロ波をプラズマ発生領域へ入射しプラズマを発生
させる手段5と、プラズマ発生領域を真空排気する手段
と、プラズマ発生領域にプラズマ処理用のガスを導入す
る手段8とから構成する。
(57) [Abstract] [Purpose] Stable and uniform gas plasma is generated in the plasma generation chamber to improve processing uniformity. [Structure] A means 1 for oscillating a microwave, means 2, 3, 4 for propagating a microwave in a waveguide, and means 9, 10 for dividing a propagating microwave in a waveguide are divided. It comprises means 5 for injecting microwaves into the plasma generation region to generate plasma, means for evacuating the plasma generation region, and means 8 for introducing gas for plasma processing into the plasma generation region.
Description
【0001】[0001]
【産業上の利用分野】本発明はマイクロ波プラズマ処理
装置に係り、特に半導体デバイスや光学用部品等を製造
するのに好適なマイクロ波プラズマ処理装置に関するも
のである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave plasma processing apparatus, and more particularly to a microwave plasma processing apparatus suitable for manufacturing semiconductor devices and optical parts.
【0002】[0002]
【従来の技術】従来の装置は、特開昭63−72123
号公報や、特開昭63−72124号公報に記載のよう
にマイクロ波導波管内に金属製の移相器を設けたり、導
波管の一部を突起させたりして、処理速度の向上と処理
むらの解消を図っている。2. Description of the Related Art A conventional device is disclosed in Japanese Patent Laid-Open No. 63-72123.
As disclosed in Japanese Patent Laid-Open No. 63-72124 and Japanese Patent Laid-Open No. 63-72124, a metal phase shifter is provided in the microwave waveguide or a part of the waveguide is projected to improve the processing speed. We are trying to eliminate uneven processing.
【0003】また、特開昭63−73624号公報に記
載のように試料の被処理面と対応するベルジャーの誘電
率分布を調整することにより、プラズマ密度の均質化を
行ない、処理の均一性を向上していた。Further, as described in JP-A-63-73624, by adjusting the dielectric constant distribution of the bell jar corresponding to the surface to be processed of the sample, the plasma density is homogenized and the uniformity of the processing is improved. It was improving.
【0004】[0004]
【発明が解決しようとする課題】上記従来技術で、特開
昭63−72123号公報や特開昭63−72124号
公報に記載される技術はマイクロ波の伝播の対象性が考
慮されておらず、このため処理条件が変化する毎に、移
相器やそれに相当するものを変化させることが必要であ
る。Among the above-mentioned conventional techniques, the techniques described in JP-A-63-72123 and JP-A-63-72124 do not consider the object of microwave propagation. Therefore, it is necessary to change the phase shifter and its equivalent whenever the processing conditions change.
【0005】また特開昭63−73624号公報では対
象性は確保されるものの、ベルジャー自体を加工する必
要があり、加工中におけるベルジャーの消耗による誘電
率の変化を保障し得るようになっていないという問題が
あった。Further, in Japanese Patent Laid-Open No. 63-73624, although the symmetry is secured, it is necessary to process the bell jar itself, and it is not possible to guarantee the change in the dielectric constant due to the consumption of the bell jar during the process. There was a problem.
【0006】本発明の目的は、安定して均一なガスプラ
ズマを生成し、処理の均一性を向上させることのできる
マイクロ波プラズマ処理装置を提供することにある。An object of the present invention is to provide a microwave plasma processing apparatus capable of generating a stable and uniform gas plasma and improving the processing uniformity.
【0007】[0007]
【課題を解決するための手段】上記目的は、マイクロ波
を発振する手段と、マイクロ波を導波管内で伝播する手
段と、伝播中のマイクロ波を導波管内で分割する手段
と、分割されたマイクロ波をプラズマ発生領域へ入射し
プラズマを発生させる手段と、プラズマ発生領域を真空
排気する手段と、プラズマ発生領域にプラズマ処理用の
ガスを導入する手段とから構成することにより、達成さ
せる。The above-mentioned object is divided into a means for oscillating microwaves, a means for propagating microwaves in a waveguide, and a means for dividing a propagating microwave in the waveguide. This is achieved by comprising means for injecting microwaves into the plasma generation region to generate plasma, means for evacuating the plasma generation region, and means for introducing gas for plasma processing into the plasma generation region.
【0008】[0008]
【作用】マイクロ波発振手段から発振させられたマイク
ロ波は、マイクロ波伝播手段により導波管内を伝播し、
伝播中のマイクロ波は導波管内で分割手段により分割さ
れて、導波管内で均一なモードのマイクロ波となって、
ガス導入手段および真空排気手段によってプラズマ処理
用ガスが所定の圧力に減圧保持されたプラズマ発生領域
へ入射され、プラズマ処理用ガスがプラズマ化される。
これにより、試料を処理するためのプラズマが安定して
均一に生成され、処理の均一性を向上させることができ
る。The microwave oscillated by the microwave oscillating means propagates in the waveguide by the microwave propagating means,
The propagating microwave is divided by the dividing means in the waveguide, and becomes a microwave of a uniform mode in the waveguide.
The plasma processing gas is made incident into the plasma generation region kept at a predetermined pressure under reduced pressure by the gas introduction means and the vacuum exhaust means, and the plasma processing gas is turned into plasma.
Thereby, the plasma for processing the sample is stably and uniformly generated, and the uniformity of the processing can be improved.
【0009】[0009]
【実施例】以下、本発明の一実施例を図1により説明す
る。本発明のマイクロ波プラズマ処理装置では、この場
合、試料6が配置される試料台7を覆ってベルジャー5
が真空容器に気密に設けられている。真空容器には真空
排気装置(図示省略)が接続されるとともに、ベルジャ
ー7内に向けて試料台7を囲むように複数個のガス供給
ノズルが均等に設けられている。ベルジャー7の外側周
囲には、ベルジャー7を囲んで円形導波管4が設けられ
ている。円形導波管4内でベルジャー5の反試料台7側
には、円筒9および仕切板10から成るマイクロ波を分
割し均一なモードのマイクロ波を形成する移相器が設け
られている。円筒9は円形導波管4内に、円形導波管4
と同心状に配置されるように、対象配置された複数枚の
仕切板10によって支持される。円形導波管4の移相器
上部はテーパ状に形成され、更にテーパ状に絞られた開
口端部には変換導波管3を介して矩形導波管2が接続さ
れ、矩形導波管2の端部にマグネトロン1が取り付けら
れている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIG. In the microwave plasma processing apparatus of the present invention, in this case, the bell jar 5 is covered by covering the sample table 7 on which the sample 6 is arranged.
Is hermetically provided in the vacuum container. A vacuum exhaust device (not shown) is connected to the vacuum container, and a plurality of gas supply nozzles are evenly provided so as to surround the sample stage 7 toward the bell jar 7. A circular waveguide 4 is provided around the outside of the bell jar 7 so as to surround the bell jar 7. On the side of the bell jar 5 opposite to the sample stage 7 in the circular waveguide 4, there is provided a phase shifter composed of a cylinder 9 and a partition plate 10 for dividing the microwave to form a microwave of a uniform mode. The cylinder 9 is inside the circular waveguide 4 and the circular waveguide 4
It is supported by a plurality of partition plates 10 that are symmetrically arranged so as to be arranged concentrically with. The upper part of the phase shifter of the circular waveguide 4 is formed in a taper shape, and the rectangular waveguide 2 is connected to the opening end that is further narrowed in a taper shape through the conversion waveguide 3. The magnetron 1 is attached to the end of 2.
【0010】このように構成された装置では、プラズマ
処理用のガスはガス供給ノズル8によりベルジャー5に
導入されるとともに、真空排気装置によって所定の処理
圧力に減圧保持される。マイクロ波はマグネトロン1に
より発生され、短形導波管2,変換導波管3,円形導波
管4内を伝播してプラズマ発生室を構成するベルジャー
5に導入される。ベルジャー5の下には試料6とそれを
保持する試料台7が設置され、試料台7の周囲の隙間よ
りプラズマ発生室中の反応生成物や未反応ガスなどが真
空排気される。In the apparatus constructed as described above, the gas for plasma processing is introduced into the bell jar 5 by the gas supply nozzle 8 and is maintained at a predetermined processing pressure by the vacuum exhaust apparatus. The microwave is generated by the magnetron 1, propagates through the short waveguide 2, the conversion waveguide 3, and the circular waveguide 4, and is introduced into a bell jar 5 that constitutes a plasma generation chamber. A sample 6 and a sample table 7 holding the sample 6 are installed under the bell jar 5, and reaction products and unreacted gas in the plasma generation chamber are evacuated through a gap around the sample table 7.
【0011】この場合、円形導波管4内には、金属製の
円筒9を複数の仕切板10によって互いに締結した移相
器が形成されていて、仕切板10はマイクロ波の伝播方
向と垂直な面内で円筒9および円形導波管4を含めて対
称に設置されている。仕切板10の数量は、円形導波管
4および円筒9の寸法によりマイクロ波の均一なモード
が発生するように設定される。円形導波管4に導入され
たマイクロ波は、この固定された移相器により分割さ
れ、均一なモードのマイクロ波となってベルジャー5内
に入射する。これにより、均一なモードのマイクロ波が
常に安定してベルジャー5内に入射されるので、プラズ
マ発生室内で均一なプラズマが形成され、試料の均一な
プラズマ処理が実施できるようになる。In this case, a phase shifter in which a metal cylinder 9 is fastened to each other by a plurality of partition plates 10 is formed in the circular waveguide 4, and the partition plates 10 are perpendicular to the microwave propagation direction. It is symmetrically installed in the plane including the cylinder 9 and the circular waveguide 4. The number of partition plates 10 is set so that uniform modes of microwaves are generated depending on the dimensions of the circular waveguide 4 and the cylinder 9. The microwave introduced into the circular waveguide 4 is split by this fixed phase shifter and becomes a microwave of a uniform mode and enters the bell jar 5. As a result, microwaves of a uniform mode are always stably incident on the bell jar 5, so that uniform plasma is formed in the plasma generation chamber, and uniform plasma treatment of the sample can be performed.
【0012】以上、本実施例によれば、均一なプラズマ
処理が可能となるガスプラズマをマイクロ波を用いて生
成、すなわち、プラズマ発生室に入射する前のマイクロ
波のモードを固定した移相器によって均一なモードに限
定して、プラズマ発生室に導入することができるので、
プラズマ発生室に安定した均一モードのマイクロ波が導
入でき、均一なプラズマが生成されて試料の処理むらを
防止、すなわち、処理の均一性が向上できるという効果
があり、プラズマ処理の生産性を向上できる。As described above, according to this embodiment, a gas plasma that enables uniform plasma processing is generated by using microwaves, that is, a phase shifter in which the microwave mode is fixed before entering the plasma generation chamber. Since it can be introduced into the plasma generation chamber by limiting to a uniform mode,
Microwaves in a stable uniform mode can be introduced into the plasma generation chamber, uniform plasma is generated, and there is the effect of preventing uneven processing of the sample, that is, the uniformity of processing can be improved, and the productivity of plasma processing is improved. it can.
【0013】なお、本実施例は円筒と円形導波管で示し
たが、短形の筒と円形導波管や、短形の筒と短形導波管
あるいは円筒と短形導波管の組合せであってもさしつか
えないことは言うまでもない。In the present embodiment, the cylinder and the circular waveguide are shown. However, a short cylinder and a circular waveguide, a short cylinder and a short waveguide, or a cylinder and a short waveguide are used. It goes without saying that even a combination may be used.
【0014】[0014]
【発明の効果】本発明によれば、安定して均一なガスプ
ラズマを生成でき、処理の均一性を向上できるという効
果がある。According to the present invention, there is an effect that a stable and uniform gas plasma can be generated and the processing uniformity can be improved.
【図1】本発明の一実施例を示すマイクロ波プラズマ処
理装置の縦断面斜視図である。FIG. 1 is a vertical cross-sectional perspective view of a microwave plasma processing apparatus showing an embodiment of the present invention.
1…マグネトロン、2…短形導波管、3…変換導波管、
4…円形導波管、5…ベルジャー、6…試料、7…試料
台、8…ガス供給ノズル、9…円筒、10…仕切板。1 ... Magnetron, 2 ... Short waveguide, 3 ... Conversion waveguide,
4 ... Circular waveguide, 5 ... Bell jar, 6 ... Sample, 7 ... Sample stand, 8 ... Gas supply nozzle, 9 ... Cylinder, 10 ... Partition plate.
Claims (1)
波を導波管内で伝播する手段と、該伝播中のマイクロ波
を導波管内で分割する手段と、該分割されたマイクロ波
をプラズマ発生領域へ入射しプラズマを発生させる手段
と、該プラズマ発生領域を真空排気する手段と、該プラ
ズマ発生領域にプラズマ処理用のガスを導入する手段と
から構成したことを特徴とするマイクロ波プラズマ処理
装置。1. A means for oscillating microwaves, a means for propagating the microwaves in a waveguide, a means for dividing the propagating microwaves in the waveguide, and a plasma for the divided microwaves. Microwave plasma processing, characterized in that it comprises means for injecting plasma into the generation area, means for evacuating the plasma generation area, and means for introducing gas for plasma processing into the plasma generation area. apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5317712A JP2607832B2 (en) | 1993-12-17 | 1993-12-17 | Microwave plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5317712A JP2607832B2 (en) | 1993-12-17 | 1993-12-17 | Microwave plasma processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH076895A true JPH076895A (en) | 1995-01-10 |
| JP2607832B2 JP2607832B2 (en) | 1997-05-07 |
Family
ID=18091194
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5317712A Expired - Lifetime JP2607832B2 (en) | 1993-12-17 | 1993-12-17 | Microwave plasma processing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2607832B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117265514A (en) * | 2023-08-28 | 2023-12-22 | 中国工程物理研究院应用电子学研究所 | A microwave plasma chemical vapor deposition device in the millimeter wave band |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62122217A (en) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | Microwave plasma processing equipment |
| JPS6372123A (en) * | 1986-09-13 | 1988-04-01 | Fujitsu Ltd | Microwave plasma treatment device |
| JPH0267637U (en) * | 1988-11-11 | 1990-05-22 | ||
| JPH03110798A (en) * | 1989-09-25 | 1991-05-10 | Ryohei Itaya | Microwave plasma generating device |
-
1993
- 1993-12-17 JP JP5317712A patent/JP2607832B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62122217A (en) * | 1985-11-22 | 1987-06-03 | Hitachi Ltd | Microwave plasma processing equipment |
| JPS6372123A (en) * | 1986-09-13 | 1988-04-01 | Fujitsu Ltd | Microwave plasma treatment device |
| JPH0267637U (en) * | 1988-11-11 | 1990-05-22 | ||
| JPH03110798A (en) * | 1989-09-25 | 1991-05-10 | Ryohei Itaya | Microwave plasma generating device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117265514A (en) * | 2023-08-28 | 2023-12-22 | 中国工程物理研究院应用电子学研究所 | A microwave plasma chemical vapor deposition device in the millimeter wave band |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2607832B2 (en) | 1997-05-07 |
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