JPH0774378A - Solar cell sheet - Google Patents

Abstract

PURPOSE:To improve constant temperature and constant humidity characteristics of an amorphous silicon solar cell by laminating a macromolecular film on silicon oxide layer and then forming an amorphous silicon solar cell on a film with an improved gas barrier property. CONSTITUTION:A gas barrier property film 35 is obtained by forming silicon oxide thin film on both surfaces of a plastic film by the plasma CVD method. A first electrode layer 12 is formed on the entire film surface of the gas barrier property film 35 by the sputtering method. Then, a mask with a hole is fitted to the film 35 and is transferred to a plasma CVD device. Then, a first conductive layer 15, an intrinsic layer 20, and a second conductive layer 25 are manufactured by the plasma CVD method. Then, the film is taken out with the mask fitted and is moved to a vacuum deposition device, thus forming a second electrode layer 27 consisting of aluminum film thickness. Further, a copper wire is adhered to the first and second electrodes by a conductive paste.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an amorphous silicon solar cell, and more particularly to a flexible amorphous silicon solar cell formed on a gas barrier film.

[0002]

2. Description of the Related Art Amorphous silicon solar cells have already been put to practical use as a low-output energy source for driving calculators and watches. However, when it is used for solar power generation, it is necessary to produce a large amount of amorphous silicon solar cells at a cost that can be industrially accepted, and research for that purpose has been conducted. As one of the methods for solving the above problems, continuous production on a polymer film has been studied for large-scale production at low cost.
3-2155083, JP-A-1-198081, JP-A-2
-94574, JP-A-2-187076 and the like can be mentioned, but they are not sufficient.

[0003]

The inventors of the present invention produced an amorphous silicon solar cell on a polymer film in order to solve the above problems and conducted a reliability test. It has been found that significant performance degradation occurs. When the cause of this performance deterioration was investigated, it was found that it was due to the active gas passing through the transparent polymer film. Therefore, as a result of diligent research to manufacture a highly reliable solar cell, it is possible to obtain an amorphous silicon solar cell having an excellent constant temperature and humidity characteristic by using a transparent polymer film having an excellent gas barrier property. They have found the present invention and reached the present invention.

[0004]

That is, the present invention has been made in order to solve the above problems.
A highly reliable flexible solar cell sheet is provided by forming an amorphous silicon solar cell on a film having a gas barrier property enhanced by laminating a silicon oxide layer on a polymer film.

That is, the present invention is an amorphous silicon solar cell formed on a gas barrier film, or the gas barrier film is a polymer film in which silicon oxide is laminated on at least one side. An amorphous silicon solar cell, or a layer of silicon oxide,
An amorphous silicon solar cell manufactured by a plasma chemical vapor deposition method (hereinafter abbreviated as PCVD method) using at least an organic silicon compound and oxygen, or
Oxygen permeability of gas barrier transparent film is 1 atm 2
An amorphous silicon solar cell having a temperature of 0.2 cc · m −2 · day ⁻¹ or less at 3 ° C.

The present invention will be described in detail below. It should be noted that the solar cell obtained by the present invention necessarily has a sheet-like appearance, and thus may be referred to as a solar cell sheet. First, referring to the attached drawings, FIG. 1 is a sectional view of a solar cell sheet manufactured in Example 1, and FIG. 2 is a sectional view of a solar cell sheet manufactured in Example 2. Here, 10 is a gas barrier transparent polymer film, 12 is a first electrode, 15 is a first conductive thin film, 20 is a substantially intrinsic thin film, 25 is a second conductive thin film, and 27 is a first conductive thin film. Second electrode, 35
Is a gas barrier polymer film, and 40 is a transparent protective layer.

In the present invention, it is desirable that the polymer film as a base material has a high glass transition temperature and a low hygroscopicity, and is a polyether sulfone, a polyether ether ketone, a polycarbonate, a polyethylene terephthalate, a polyethylene naphthalate, a polyamide. , Polyimide and the like are preferable. The thickness of the polymer film is not particularly limited, but is preferably 25 to 200 μm, more preferably 50 to 100 μm.

The present invention provides a gas barrier film by forming a gas barrier layer on such a film, and silicon oxide is most preferred as the gas barrier layer. The layer of silicon oxide to be laminated on the polymer film substrate used here can be prepared by a physical vapor deposition method, a chemical vapor deposition method, a wet method or the like. Specifically, in the physical vapor deposition method,
There are a vacuum vapor deposition method, an ion plating method, a sputtering method and the like, a chemical vapor deposition method includes a thermal CVD method, a photo CVD method, a plasma CVD method and the like, and a wet method includes a sol-gel method and the like. However, in the present invention, since the base material is a polymer film, it is preferable to form the film at a lower temperature than a general metal substrate, and a physical vapor deposition method or a plasma CVD method is preferable. In the vacuum deposition method, raw materials of silicon dioxide and silicon monoxide are evaporated by resistance heating or electron beam heating and deposited on a polymer film. In the sputtering method, a silicon dioxide target is sputtered with argon to deposit a film on the polymer film.

However, as proposed by the present inventors, the plasma CVD method is particularly preferably used for this purpose. That is, the layer of silicon oxide to be laminated on the polymer film substrate used in the present invention is more preferably prepared by introducing at least an organosilicon compound and oxygen gas into the reactor by plasma CVD. Then,
Specific examples of the organosilicon compound used include acetoxytrimethylsilane, allyloxytrimethylsilane,
Allyltrimethylsilane, bistrimethylsilyladipate, butoxytrimethylsilane, butyltrimethoxysilane, cyclohexyloxytrimethylsilane, decamethylcyclopentasiloxane, decamethyltetrasiloxane, diacetoxydimethylsilane, diacetoxymethylvinylsilane, diethoxydimethylsilane, diethoxy Diphenylsilane, diethoxy-3-glycidoxypropylmethylsilane, diethoxymethyloctadecylsilane, diethoxymethylsilane, diethoxymethylphenylsilane, diethoxymethylvinylsilane, dimethoxydimethylsilane, dimethoxydiphenylsilane, dimethoxymethylphenylsilane, dimethyl Ethoxyphenylsilane, dimethylethoxysilane, dimethylisopentyloxyvinyl Silane, 1,3-dimethyl-1,
1,3,3-tetraphenyldisiloxane, diphenylethoxymethylsilane, diphenylsilanediol,
1,3-divinyl-1,1,3,3-tetramethyldisilazane, 2- (3,4-epoxycyclophenylethyl) trimethoxysilane, ethoxydimethylvinylsilane, ethoxytrimethylsilane, ethyltriacetoxysilane, ethyl Triethoxysilane, ethyltrimethoxysilane, ethyltrimethylsilane, 3-glycidoxypropyltrimethoxysilane, 1,1,1,3,5
5,5-heptamethyltrisiloxane, hexamethylcyclotrisiloxane, hexamethyldisiloxane, hexyltrimethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, methoxytrimethylsilane, methyltriacetoxysilane , Methyltriethoxysilane, methyltrimethoxysilane, methylisopropenoxysilane, methylpropoxysilane, octadecyltriethoxyethoxysilane, octamethylcyclotetrasiloxane,
1,1,1,3,5,7,7,7-octamethyltetrasiloxane, octamethyltrisiloxane, octyltriethoxysilane, 1,3,5,7,9-pentamethylcyclopentasiloxane, pentamethyldisiloxane Siloxane,
1,1,3,5,5-pentaphenyl-1,3,5-trimethyltrisiloxane, phenyltriethoxysilane, phenyltrimethoxysilane, phenyltrimethylsilane, propoxytrimethylsilane, propyltriethoxysilane, tetraacetoxysilane, Tetrabutoxysilane, tetrateethoxysilane, tetraisoprapoxysilane, tetramethoxysilane, 1,3,5,7-
Tetramethoxycyclotetrasiloxane, 1,1,3
3-tetramethyldiloxane, tetramethylsilane,
1,3,3,5-tetramethyl-1,1,5,5-tetraphenyltrisiloxane, 1,3,5,7-tetramethyl-1,3,5,7-tetravinylcyclotetrasiloxane, tetrapropoxysilane , Triacetoxyvinylsilane, triethoxyvinylsilane, triethylsilane, trihexylsilane, trimethoxysilane, trimethoxyvinylsilane, trimethylsilanol, 1,3,3
5-trimethyl-1,3,5-trivinylcyclotrisiloxane, trimethylvinylsilane, triphenylsilanol, tris (2-methoxyethoxy) vinylsilane and the like can be used, but not limited to these, aminosilane, Silazane and the like are also used.

To introduce the above organic compounds into the reaction vessel, a rare gas such as helium or argon can be used as a carrier gas. It is also possible to heat the organic silicon compound to raise the vapor pressure and directly introduce the organic silicon gas. Further, instead of oxygen gas, a gas having an oxidizing effect, such as ozone, water vapor, laughing gas, etc., may be used. The ratio of the flow rates of the organic silicon gas and the oxygen gas to be introduced depends on the type of the organic silicon compound, but is preferably in the range of oxygen gas / organic silicon gas = 0.2 to 1.2.
When a rare gas such as helium is used as the carrier gas, the range of the flow rate of the organic gas and the flow rate of the oxygen gas in the helium is preferably within the above range of 0.2 to 1.2. If the oxygen flow rate is too low, the light transmittance and gas barrier property of the produced film will be reduced, and if the oxygen flow rate is high, the film adhesion and gas barrier property will be reduced. Further, the pressure during the reaction may be in the range where plasma discharge occurs, and when the film is formed by a normal parallel plate type high frequency plasma device, it is preferably 0.05 to 2.5 Torr, more preferably 0. It is 1 to 1.5 Torr. If the pressure is too low, it becomes difficult to maintain the plasma discharge, and if the pressure is too high, the adhesion of the film tends to decrease. However, in the case of using electron cyclotron resonance discharge, helicon wave discharge, or magnetron discharge that can be discharged at a lower pressure, the pressure range is not limited to the above range. The discharge power is appropriately selected in relation to the deposition rate, but is preferably about 0.1 to 10 W per 1 cm 2 of the electrode. A mass flow controller, a float type flow meter, a bubble meter or the like can be used for measuring and controlling the flow rate. A Pirani vacuum gauge, a diaphragm vacuum gauge, a spinning rotor vacuum gauge, a heat conduction vacuum gauge, an ionization vacuum gauge, or the like can be used to measure the pressure, but a diaphragm vacuum gauge is preferably used.

The thickness of the silicon oxide layer in the present invention is preferably within a range that does not impair the transparency while maintaining the gas barrier property, specifically, 20 to 500 nm.
Is preferable, and more preferably 50 to 200 nm.
Furthermore, if the thickness is the same, it is preferable to provide a silicon oxide layer on both sides of the film. That is, it is preferable to provide a 100 nm layer on both sides rather than a 200 nm layer on one side.

The oxygen permeability of the gas barrier film thus produced is, for example, 0.2 cc · m ⁻² · day ⁻¹ or less as measured by ASTM D-1434. In the silicon oxide, iron, chromium, nickel, titanium, magnesium, aluminum,
Indium, zinc, tin, antimony, tungsten,
A small amount of molybdenum, copper, etc. may be contained. For the measurement of the film thickness, there are a stylus roughness meter, a repeated reflection interferometer, a microbalance, a crystal oscillator method and the like. The crystal oscillator method is suitable for obtaining a desired film thickness because the film thickness can be measured during film formation. Further, there is also a method in which the conditions for film formation are determined in advance, the film is formed on a test substrate, the relationship between the film formation and the film thickness is investigated, and then the film thickness is controlled by the film formation time.

As a method for improving the gas barrier property of the polymer film, in addition to the above, a method for forming an inorganic layer (Japanese Patent Laid-Open Nos. 62-196139 and 63-20).
5094, JP-A-1-297237) and a method of forming silicon oxide by a vacuum deposition method (JP-A-49-3).
4984), which is basically applicable. Further, as a method for improving the gas barrier property, a method of using a polymer material having an excellent gas barrier property is also known. As a specific example, polyvinylidene chloride, ethylene-vinyl alcohol copolymer, polyvinyl alcohol, nylon, etc. may be appropriately coated on the transparent polymer film substrate. Those skilled in the art will understand that it is effective to appropriately laminate an inorganic layer and a polymer layer in order to further improve the performance.

There are no particular restrictions on the type of amorphous silicon solar cell formed on the gas barrier transparent film, but single-type cells or stack-type cells (two-layer tandem or three-layer triple cells, etc.) can be used. It is preferably used. The layer structure itself of such a solar cell is basically widely known already, and this can be applied. To specifically exemplify the case of a single cell, the first electrode, the first conductive thin film, the substantially intrinsic thin film, and the second conductive film are formed on the gas barrier transparent film described in detail above. Thin film,
There is an amorphous silicon solar cell in which a second electrode is formed in this order. In forming the conductive thin film, the first conductive thin film and the second conductive thin film have different conductivity types. For example, if the first conductivity type is p-type, the second conductivity type is n-type. It goes without saying that the opposite is also possible.

In the present invention, it is preferable to seal the solar cell thus formed. In this case, the second embodiment (
As shown in FIG. 2), it is preferable to make a solar cell by sealing the surface of the cell not in contact with the film with a protective layer such as a resin having a high transparent moistureproof property after the cell is formed. Also,
A silicon oxide layer may be formed together when forming the protective layer. Further, as shown in Example 1 (FIG. 1), it is possible to seal by using a gas barrier film itself used for the substrate instead of the resin. It is preferable to use a PVA-based pot melt adhesive or thermocompression-bonding using a fluororesin-based PVDF or the like for bonding the film, and polyisobutylene can also be used for sealing. .

The conductive thin film layer except the electrode layer is a substantially amorphous or crystalline silicon thin film, and the intrinsic thin film is a substantially amorphous silicon thin film. In the formation of the thin film, it is preferable that the thin film growth step is performed in an atmosphere containing charged particles generated by discharging at least a mixed gas of an organosilicon compound and a non-depositing gas. The means for supplying the thin film forming raw material, and further, the film forming means itself is not limited. Specifically, it is performed by a physical vapor deposition method such as a vacuum vapor deposition method, a sputtering method, an ion plating method, an optical CVD method, or a plasma CVD method. The atmosphere containing charged particles is an atmosphere containing at least an organic silicon compound and cations and / or anions or / and electrons of a non-depositing gas.

The electrode layer may be formed by a known thin film forming method, and generally, a vacuum vapor deposition method, an ion plating method, a sputtering method and the like are preferably used.
When transparency is required for the electrode material, a tin oxide film,
Indium oxide (tin oxide doped), zinc oxide (aluminum doped) and the like are used. If transparency is not required, metals or alloys such as silver, aluminum and chromium are used. The first conductive thin film, the substantially intrinsic thin film, and the second conductive thin film are substantially amorphous silicon thin films or crystalline silicon thin films.

As a starting material for forming the amorphous silicon thin film or the crystalline silicon thin film, elements or compounds such as silicon, silicon carbide, silicon nitride, silicon-germanium alloy or mixed powder can be effectively used. . The film forming conditions are not particularly limited, except that the film is exposed to an atmosphere containing charged particles during thin film growth.
The film can be formed in an atmosphere of a rare gas such as argon, xenon, helium, neon, or krypton, hydrogen, hydrocarbon, fluorine, nitrogen, or oxygen gas. As a concrete condition,
The gas flow rate is 0.1 to 100 sccm, and the reaction pressure is 0.1.
It is in the range of 001 to 100 mTorr. In addition, film forming conditions such as flow rate, pressure, and electric power are appropriately selected according to the film forming rate.

The film forming temperature is controlled by controlling the substrate temperature. The temperature range is basically preferably 200 ° C. or lower due to the limitation of the heat resistant temperature of the transparent film, but is not limited to this temperature as long as the heat resistant temperature of the film is higher. Raw material as a gas, the general formula _{Si n H 2n + 2 (n} -1,2,3.──) in monosilane represented, disilane, trisilane, tetrasilane, silane compounds and fluoride silane for deposition, organic Silane, hydrocarbon, germane compound and the like are used. Also, hydrogen,
Fluorine, chlorine, helium, argon, neon, xenon,
A gas such as krypton or nitrogen may be introduced together with the source gas. When these gases are used, it is effective to use them in the range of 0.01 to 100% (volume ratio) with respect to the raw material gas, and they are appropriately selected in consideration of the film forming rate and film characteristics. Is.

Similar to the physical film forming method, the film forming conditions are not particularly limited except that the film formation is performed in an atmosphere containing charged particles. Specific conditions are illustrated below. As a plasma CVD discharge method, high-frequency discharge, DC discharge, microwave discharge, ECR discharge or the like can be effectively used. Flow rate of source gas 1 to 90
0 sccm, reaction pressure 0.001 mTorr to atmospheric pressure, input power per 1 cm 2 of electrode is 1 mW to 10 W
The range of is sufficient. These film forming conditions are the film forming speed,
It is appropriately changed according to the discharge method. The first and second conductive thin films are formed by the above method so that one is a p-type thin film and the other is an n-type thin film.

As a method for forming the p-type thin film, a gas containing a boron compound such as diborane, a boron halide such as boron trifluoride, a group III element such as an organic boron such as trimethylboron is used as the source gas, if necessary. And mix to form a film.
At this time, it is also a preferable mode to appropriately mix and use hydrogen gas, hydrogen fluoride gas, fluorine gas, argon gas, and helium gas. The mixing ratio of the gas containing the Group III element and the other gas is appropriately selected in accordance with the desired conductivity and carrier density of the thin film, but is usually 10 ppm to 20 ppm.
%, More preferably 200 ppm to 5% by volume. The thickness of the p-type thin film is not particularly limited, but is usually 5 to 100 nm, more preferably 10
Formed to ˜50 nm.

The n-type thin film is formed by adding phosphine, arsine, phosphorus halide, arsenic halide, alkyl phosphorus, etc. to the source gas. The addition rate is 10 ppm to 10% with respect to the source gas, and more preferably,
It is in the range of 100 ppm to 5% by volume. The thickness of the n-type thin film is not particularly limited, but is usually 5 to 100 nm,
More preferably, it is formed in the range of 20 to 50 nm.

Substantially, the intrinsic thin film layer is a silicon hydride thin film, a silicon hydride germanium thin film, a silicon hydride carbon thin film, etc., and forms the photoactive region of the photoelectric conversion element. These substantially intrinsic thin films are compounds having silicon in a molecule such as silane and disilane, compounds having germanium in a molecule such as germane, organic silane compounds such as methylsilane, or a mixture of these compounds and a hydrocarbon gas. It can be formed more easily by applying a film forming means such as a plasma CVD method or a photo CVD method to a raw material gas appropriately selected according to a target semiconductor thin film from a mixed gas or the like. Diluting the raw material gas with hydrogen, deuterium, helium, argon, xenon, neon, krypton or the like does not hinder the effects of the present invention. The film thickness of the substantially intrinsic thin film layer is not particularly limited, but is usually 30 to 600 nm, and more preferably 50 to 500 nm. It goes without saying that the silicon oxide layer and the solar cells can be formed on a flexible film one by one in a batch method, but it is particularly industrially preferable to continuously produce a long film by a roll-to-roll method. Those skilled in the art will recognize that this is the preferred form. Hereinafter, an example of an embodiment of the present invention will be described with reference to examples.

[0024]

Example 1 (Production of Gas Barrier Film) Three polyethersulfone films each having a thickness of 125 μm and a size of 70 × 70 mm were prepared, and both surfaces thereof were subjected to the plasma CVD method under the conditions shown in Table 1. Using TMDSO (tetramethyldisiloxane) as a raw material, a silicon oxide thin film having a thickness of 50 nm was formed to obtain a bus barrier film. When the oxygen gas permeability of one of the films was measured according to ASTM D-1434, it was 0.16 cc · m −2 · day ⁻¹ .

(Preparation of Solar Cell Element) One of the prepared gas barrier films was selected, and the first electrode layer was formed by sputtering under the conditions shown in Table 2 by the sputtering method.
A film having a thickness of 00 nm was formed on the entire surface of the film. Then 50x
A mask having a hole of 50 mm was attached to the film, the plasma CVD apparatus was moved, and the first conductive layer, the intrinsic layer, and the second conductive layer were produced by the plasma CVD method under the conditions shown in Table 3. The film was taken out with the mask attached and transferred to a vacuum vapor deposition apparatus to form a second electrode layer of aluminum with a film thickness of 300 nm. A copper wire was bonded to the first and second electrodes with a conductive paste.

(Sealing of Solar Cell Element) The remaining one of the gas barrier films produced above was coated with a polyvinyl alcohol-based hot melt adhesive with a width of 5 mm from the edge, and the solar cell element produced above was used. The edges were thermocompression-bonded and sealed to obtain a solar cell. FIG. 1 shows a schematic sectional view of the produced solar cell. Of the manufactured solar cell,
When the characteristics were measured, under the condition of AM1.5, the open end voltage was 0.82 V, the short circuit current was 14.7 mA / cm ² ,
FF = 0.62, and the conversion efficiency was 7.8%.
When the characteristics of this solar cell were put in a thermo-hygrostat at 60 ° C. and 85% RH for 2000 hours, the characteristics were examined. Under the condition of AM1.5, the open end voltage was 0.81 V and the short-circuit current was 14.
5 mA / cm ² , FF = 0.61, and the conversion efficiency is
Yield 7.2%. Therefore, the deterioration rate was 8% or less.

Comparative Example 1 A solar cell was produced in the same procedure as in Example 1 except that a polyether fulphone film having no silicon oxide formed on both sides was used. The oxygen transmission rate of a polyether fluphone film that does not form silicon oxide on both sides is determined by ASTM D
When measured in accordance with -1434, 324 cc · m
It was −2 · day ⁻¹ . The characteristics of the manufactured solar cell were measured. As a result, under the condition of AM1.5, the open end voltage was 0.82 V, the short circuit current was 14.5 mA / cm ² , and FF =
The conversion efficiency was 0.62, and the conversion efficiency was 7.4%. Put this solar cell in a thermo-hygrostat at 60 ° C and 85% RH for 20
When the characteristics were examined after 00 hours, the open end voltage was 0.32 V and the short-circuit current was 8.7 mA / under the condition of AM1.5.
cm ² , FF = 0.52, the conversion efficiency is 1.5%
Became. The deterioration rate was about 80%, and the deterioration was remarkable, and the solar cell was unusable.

[0028]

[Table 1]

[0029]

[Table 2]

[0030]

[Table 3]

Example 2 (Production of Gas Barrier Film) Polyimide film (Kapton) having a thickness of 50 μm and a size of 70 × 70 mm
-V, DuPont Co., Ltd.) on both sides of the TMDSO under the conditions shown in Table 1 by the plasma-CVD method.
Using (tetramethyldisiloxane) as a raw material, a thickness of 50
nm of silicon oxide was formed to obtain a bus barrier film. Use one sheet of this film as ASTM D-1434
The oxygen gas permeability was measured in accordance with
It was cc · m−2 · day ⁻¹ .

(Preparation of Solar Cell Element) One of the prepared gas barrier films was selected, and aluminum was formed as a first electrode layer to a thickness of 200 nm by a vacuum deposition method under the conditions shown in Table 2 by a sputtering method. It was formed on the entire surface of the film. Then, a mask having a hole of 50 × 50 mm is attached to the film, the plasma CVD apparatus is moved, and the first conductive layer, the intrinsic layer, and the second conductive layer are shown in Table 3 by the plasma CVD method. It was made in. The film was taken out with the mask attached and transferred to a sputtering apparatus to form a second electrode layer with a film thickness of 50 nm under the conditions shown in Table 2. Next, the mask was exchanged, and a silver electrode layer was vapor-deposited so as to form a comb shape. A copper wire was attached to the first and silver electrodes with a conductive paste.

(Sealing of Solar Cell Element) A silicon oxide layer was formed on the entire surface of the element produced as described above under the conditions shown in Table 1, and a silicone-based transparent resin was formed as a protective layer. FIG. 2 shows a schematic sectional view of the produced solar cell. When the characteristics of the manufactured solar cell were measured, the open end voltage was 0.83 under the condition of AM1.5.
V, short circuit current 14.8 mA / cm ² , FF = 0.64,
The conversion efficiency was 7.9%. This solar cell
When the characteristics were examined after 2000 hours in a constant temperature and humidity tank of 60 ° C. and 85% RH, under the condition of AM1.5, the open end voltage was 0.83 V, the short circuit current was 14.5 mA / cm ² ,
FF = 0.63, and the conversion efficiency was 7.6%.
Therefore, the deterioration rate was 4% or less.

Comparative Example 2 A solar cell was manufactured by the same procedure as in Example 1 except that a polyimide film on which silicon oxide was not formed was used. The oxygen transmission rate of a polyimide film (Kapton-V, thickness 25 μm) on which silicon oxide is not formed on both sides is A
When measured according to STM D-1434, 12
It was 5 cc · m−2 · day ⁻¹ . When the characteristics of the manufactured solar cell were measured, the open end voltage was 0.85 V and the short-circuit current was 14.9 mA / c under the condition of AM1.5.
m ² , FF = 0.61, and a conversion efficiency of 7.7% was obtained. This solar cell was placed in a constant temperature and humidity chamber at 60 ° C. and 85% RH, and its characteristics were examined after 2000 hours.
Under the condition of 1.5, the open end voltage was 0.57 V, the short-circuit current was 6.7 mA / cm ² , FF = 0.52, and the conversion efficiency was 2.1%. The deterioration rate was about 73%, and the deterioration was remarkable and the solar cell could not be used.

[0035]

EFFECTS OF THE INVENTION It can be suitably used outdoors, etc., and has very little deterioration in performance even under high temperature and high humidity conditions.
A flexible solar cell sheet having excellent reliability can be obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a solar cell sheet manufactured in Example 1.

FIG. 2 is a cross-sectional view of the solar cell sheet produced in Example 2.

[Explanation of symbols]

 10 Gas Barrier Transparent Polymer Film 12 First Electrode 15 First Conductive Thin Film 20 Substantially Intrinsic Film 25 Second Conductive Thin Film 27 Second Electrode 35 Gas Barrier Polymer Film 40 Transparent Protective Layer

Claims (4)

[Claims] 1. An amorphous silicon solar cell formed on a gas barrier film. 2. The amorphous silicon solar cell according to claim 1, wherein the gas barrier film is a polymer film in which silicon oxide is laminated on at least one surface. 3. A silicon oxide layer is formed by plasma chemical vapor deposition (hereinafter PC) using at least an organic silicon compound and oxygen.
The amorphous silicon solar cell according to claim 2, which is manufactured by a VD method). 4. A gas barrier transparent film having an oxygen permeability of 0.2 cc · m−2 · day at 1 atmospheric pressure of 23 ° C.
^-1 or less, The amorphous silicon solar cell in any one of Claims 1-3.