JPH0777211B2 - アッシング方法 - Google Patents

アッシング方法

Info

Publication number
JPH0777211B2
JPH0777211B2 JP62203985A JP20398587A JPH0777211B2 JP H0777211 B2 JPH0777211 B2 JP H0777211B2 JP 62203985 A JP62203985 A JP 62203985A JP 20398587 A JP20398587 A JP 20398587A JP H0777211 B2 JPH0777211 B2 JP H0777211B2
Authority
JP
Japan
Prior art keywords
oxygen
ashing
plasma
water
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62203985A
Other languages
English (en)
Other versions
JPS6448421A (en
Inventor
修三 藤村
啓介 品川
直道 阿部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62203985A priority Critical patent/JPH0777211B2/ja
Priority to KR1019880009223A priority patent/KR910009319B1/ko
Priority to EP88113392A priority patent/EP0304046B1/en
Priority to DE3856395T priority patent/DE3856395T2/de
Publication of JPS6448421A publication Critical patent/JPS6448421A/ja
Priority to US08/193,893 priority patent/US5773201A/en
Publication of JPH0777211B2 publication Critical patent/JPH0777211B2/ja
Priority to US08/972,435 priority patent/US5961775A/en
Priority to US08/972,251 priority patent/US5998104A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔概要〕 ァッシング方法の改良に関し、 被処理物に物理的損傷を与えることなく、かつ、アッシ
ングレートを下げることのない酸素プラズマ処理技術を
提供することを目的とし、 反応ガスとしての酸素を含むガスに水を添加し、水と酸
素との混合ガスを反応ガスとし、この反応ガスをプラズ
マ化してダウンストリームアッシングをなすように構成
される。
〔産業上の利用分野〕
本発明は酸素プラズマを利用したアッシング方法の改良
技術に関する。特に、フォトレジスト等の有機樹脂膜の
アッシングに好適な、被処理物に物理的損傷を与えない
というダウンストリームアッシングの特質を活かしつつ
もアッシングレートを実用的なレベルにまで向上させう
る改良技術に関する。
〔従来の技術〕
半導体装置の製造方法等において利用されるフォトリソ
グラフィー法等においてはフォトレジスト等をもって構
成されるマスクが必須であり、使用済みのフォトレジス
ト等は露光によって変質硬化しているため、これを除去
することは必ずしも容易ではない。
このような使用済みのフォトレジスト等を除去するに
は、従来、酸素をプラズマ化してなすダウンストリーム
アッシング方法が使用されているが、この酸素をプラズ
マ化してなすダウンストリームアッシング方法のアッシ
ングレートは数百Å／分であり、十分満足しうるところ
ではない。
この酸素をプラズマ化してなすダウンストリームアッシ
ング方法のアッシングレートを向上する努力は種々され
ており、反応ガスとしての酸素を含むガスに窒素を添加
して、プラズマ中の反応種としての酸素粒子（原子、ラ
ジカル、イオン等）の数を増加し、アッシングレートを
上昇する手法が開発されている。
また、プラズマを構成する粒子（原子、ラジカル、イオ
ン等）の数を制御するには、その粒子の数を検出するこ
とが必須であるが、このプラズマを構成する粒子（原
子、ラジカル、イオン等）の数を検出する方法に、アク
チノメトリーを利用する方法が知られている。これは、
プラズマにともなって発生する光の波長がそのプラズマ
に特有な元素に依存するという原理を利用するものであ
り、プラズマ中には反応に寄与する元素と、反応には寄
与せず基準としてのみ機能する基準元素例えばアルゴン
を含有させておき、このプラズマにともなって発生する
プラズマ光を分光し、反応に寄与する元素に特有な波長
の光の強度と基準元素例えばアルゴンに特有な波長の光
の強度とを検出して、反応に寄与する元素に特有な波長
の光の強度を、基準元素例えばアルゴンに特有な波長の
光の強度をもって正規化するものである。このアクチノ
メトリーを利用する方法を使用して、酸素を含むガスに
添加される窒素の量を制御すると、酸素をプラズマ化し
てなすダウンストリームアッシング方法のアッシングレ
ートを極めて正確に制御することが可能となり、アッシ
ングレートがすぐれているダウンストリームアッシング
方法が実現し、8,000Å／分程度のアッシングレートが
実現することが確認されている。
〔発明が解決しようとする問題点〕
たゞ、上記の反応ガスとしての酸素を含むガスに窒素を
添加してなすダウンストリームアッシング方法におけ
る、反応種は酸素原子、酸素ラジカル、酸素イオン励起
された酸素分子のみであり、上記の添加される窒素の機
能は、反応種としての酸素原子、酸素ラジカル、酸素イ
オン励起された酸素分子の数を添加させることであると
考えられているから、この手法をもって実現しうるアッ
シングレートの上昇には限度があり、よりすぐれた酸素
をプラズマ化してなすダウンストリームアッシング方法
の開発が望まれていた。
本発明の目的は、この要請に応えることにあり、アッシ
ングレートがさらに向上している酸素をプラズマ化して
なすダウンストリームアッシング方法を提供することに
ある。
〔問題点を解決するための手段〕 上記の目的は、少なくとも酸素を含むガスをプラズマ化
してなすアッシング方法であって、ダウンストリームア
ッシング方法において、1.5％以上20％以下の量の水
を、酸素を含むガスに添加するアッシング方法によって
達成される。
〔作用〕
酸素をプラズマ化してなすダウンストリームアッシング
方法の反応ガスに水を添加してなした実験の結果を第２
図に示す。使用ガスは1,000SCCMの酸素中に次第に増量
しながら水を添加してあり、内圧は0.8Torrに固定され
ている。基板温度は200℃である。Ｘ軸には水添加量を
％をもって表示してあり、Ｙ軸のうち左側には酸素原子
数を表す指数を、また、Ｙ軸のうち右側にはアッシング
レートをそれぞれ表示してある。
グラフより明らかなように、水添加量が1.5％以下であ
ると、酸素の粒子数は水の添加量に比例して増加する。
しかし、水添加量が1.5％を超えると、酸素の粒子数の
増加率は減少するが、アッシングレートの増加率は減少
せず、おゝむね等増加率をもって増加しつゞける。アッ
シングレートの極大値の存否と、極大値があるとすれば
その極大値に対応する水の混合率とは未確認であるが、
少なくとも20％程度までは上昇する継続することが実験
的に確認されている。
この現象は、本発明に係る酸素をプラズマ化してなすダ
ウンストリームアッシング方法における反応種が酸素の
粒子のみではなく、他の反応種例えば、水素イオン、水
酸イオン等も関与している可能性を示すものであり、本
発明が依拠する自然法則は、従来知られていなかった新
たな反応種にもとずくものであると推考される。
〔実施例〕
以下、図面を参照しつゝ、本発明の一実施例に係るアッ
シング方法について、さらに説明する。
第１図参照 図において、１は導波管であり、2.45GHの電磁波が矢印
の方向に供給される。２はプラズマ発生室であり、反応
ガス供給管３を介して酸素と水との混合ガスが例えば1,
000SCC/分をもって供給される。４はスリット41を有す
る隔壁でありプラズマ発生室２中で発生したプラズマに
含まれる活性種はこのスリット41を介して反応室５中に
供給される。６はステージであり、温度制御用のヒータ
61が設けられており、その上に被処理物例えば半導体ウ
ェーハ７が乗せられる。51は排気手段である。
ステージ６に被処理物たる半導体ウェーハ７を乗せ、ヒ
ータ61を使用して半導体ウェーハ７の温度を200℃に保
ち、装置の内圧を一旦0.01Torr程度に減圧して内部を清
浄化した後、所望の混合比に水を含有する酸素を、反応
ガス供給管３を介して供給し、装置の内圧を08Torr程度
に昇圧する。ここで、例えば2.45GHの電磁波を供給して
プラズマを発生する。
プラズマ中で生成し活性種（酸素原子、酸素ラジカル、
酸素イオン励起された酸素分子を含み、水素イオン、水
酸イオン等も含むと考えられる）が反応室５中に供給さ
れ、ここで、半導体ウェーハ７と接触してアッシング反
応が発生する。
ここで、反応ガスには、上記のとおり、酸素と水との混
合ガスが使用される。そして、水の添加量を次第に増大
させて行くと、第２図に示すように、水添加量が1.5％
程度に達するまでは、酸素粒子数もアッシングレート
も、水添加量に比例して増加する。しかし、水添加量が
1.5％を超えると酸素粒子数は飽和するが、水添加量が
1.5％を超えてもアッシングレートはさらに増加傾向を
継続し、この傾向は水添加量が20％程度に達するまで継
続する。このアッシング反応におけるアッシングレート
は、極めて速く、10,000Å／分を容易に超える。
〔発明の効果〕
以上説明せるとおり、本発明に係るダウンストリームア
ッシング方法は、少なくとも、酸素ガスと水との混合ガ
スをプラズマ化してこのプラズマ中で生成した活性種
（酸素原子、酸素ラジカル、酸素イオン励起された酸素
分子を含み、水素イオン、水酸イオン等も含むと考えら
れる）を反応種としており、水添加量を増加させた際
に、アッシングレートが増加傾向を継続する添加量の水
を、具体的には、1.5％以上20％以下の量の水を、酸素
ガスに添加することゝされているので、アッシングレー
トが極めて速い。
なお、四フッ化炭素を使用する必要がないという利点も
ある。
【図面の簡単な説明】
第１図は、本発明のに係るアッシング方法の実施に使用
される装置の構成図である。 第２図は、本発明に係るアッシング方法の作用を検討す
るためになした実験の結果を示すグラフである。 １……導波管、 ２……プラズマ発生室、 ３……反応ガス供給管、 ４……隔壁、 41……スリット、 ５……反応室、 51……排気孔、 61……ヒータ、 ７……被処理物（半導体ウェーハ）。
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−16424（ＪＰ，Ａ) 特開 昭56−21333（ＪＰ，Ａ) 特開 昭63−216346（ＪＰ，Ａ)

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】少なくとも酸素を含むガスをプラズマ化し
    てなすアッシング方法であって、ダウンストリームアッ
    シング方法において、 前記酸素を含むガスに、1.5％を超える量の水を添加す
    る ことを特徴とするアッシング方法。
JP62203985A 1987-08-19 1987-08-19 アッシング方法 Expired - Lifetime JPH0777211B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP62203985A JPH0777211B2 (ja) 1987-08-19 1987-08-19 アッシング方法
KR1019880009223A KR910009319B1 (ko) 1987-08-19 1988-07-22 레지스트 마스크 박리방법
EP88113392A EP0304046B1 (en) 1987-08-19 1988-08-18 A method of stripping a resist mask
DE3856395T DE3856395T2 (de) 1987-08-19 1988-08-18 Entschichtungsverfahren für Lackmaske
US08/193,893 US5773201A (en) 1987-08-19 1994-02-09 Method of stripping a resist mask
US08/972,435 US5961775A (en) 1987-08-19 1997-11-18 Apparatus for removing organic resist from semiconductor
US08/972,251 US5998104A (en) 1987-08-19 1997-11-18 Method of stripping a resist mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62203985A JPH0777211B2 (ja) 1987-08-19 1987-08-19 アッシング方法

Publications (2)

Publication Number Publication Date
JPS6448421A JPS6448421A (en) 1989-02-22
JPH0777211B2 true JPH0777211B2 (ja) 1995-08-16

Family

ID=16482878

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62203985A Expired - Lifetime JPH0777211B2 (ja) 1987-08-19 1987-08-19 アッシング方法

Country Status (5)

Country Link
US (3) US5773201A (ja)
EP (1) EP0304046B1 (ja)
JP (1) JPH0777211B2 (ja)
KR (1) KR910009319B1 (ja)
DE (1) DE3856395T2 (ja)

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KR890004407A (ko) 1989-04-21
EP0304046B1 (en) 2000-01-26
US5773201A (en) 1998-06-30
US5961775A (en) 1999-10-05
EP0304046A2 (en) 1989-02-22
EP0304046A3 (en) 1990-08-16
US5998104A (en) 1999-12-07
DE3856395T2 (de) 2000-06-08
KR910009319B1 (ko) 1991-11-09
DE3856395D1 (de) 2000-03-02
JPS6448421A (en) 1989-02-22

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