JPH077779B2 - Infrared detector - Google Patents

Infrared detector

Info

Publication number
JPH077779B2
JPH077779B2 JP63231237A JP23123788A JPH077779B2 JP H077779 B2 JPH077779 B2 JP H077779B2 JP 63231237 A JP63231237 A JP 63231237A JP 23123788 A JP23123788 A JP 23123788A JP H077779 B2 JPH077779 B2 JP H077779B2
Authority
JP
Japan
Prior art keywords
film
hgcdte
contact
wire
infrared detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63231237A
Other languages
Japanese (ja)
Other versions
JPH0278240A (en
Inventor
有弘 橋本
通 前川
知史 上田
昌弘 田中
敏之 上田
邦広 谷川
宏 瀧川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63231237A priority Critical patent/JPH077779B2/en
Publication of JPH0278240A publication Critical patent/JPH0278240A/en
Publication of JPH077779B2 publication Critical patent/JPH077779B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Wire Bonding (AREA)
  • Light Receiving Elements (AREA)

Description

【発明の詳細な説明】 〔概要〕 配線接続電極の構成に関し、 電極膜による素子特性の変化を抑制することを目的と
し、 HgCdTe結晶素子上にNiからなるHgCdTe結晶コンタクト膜
とボンディングワイヤーのコンタクト膜とを積層した電
極膜を構成する。DETAILED DESCRIPTION OF THE INVENTION [Outline] Concerning the structure of a wiring connection electrode, a HgCdTe crystal contact film made of Ni and a contact film of a bonding wire are formed on a HgCdTe crystal device for the purpose of suppressing changes in device characteristics due to the electrode film. To form an electrode film in which and are laminated.

〔産業上の利用分野〕[Industrial application field]

本発明は赤外検知装置のうち、配線接続電極の構成に関
する。The present invention relates to the configuration of wiring connection electrodes in an infrared detection device.

〔従来の技術〕[Conventional technology]

第２図はHgCdTe（水銀・カドミウム・テルル）からなる
光伝導型多素子赤外検知装置の平面図を示しており、Hg
CdTe素子１がサファイヤ基板２の上にアレイ状に配置さ
れて、このHgCdTe素子の受光部６の両側に電極3,共通電
極４が設けられ、これらの電極に金ワイヤー５が接続さ
れており、素子中央の受光部６で赤外線を受けるとキャ
リアが発生してそれを感知する。Figure 2 shows a plan view of a photoconductive multi-element infrared detector made of HgCdTe (mercury, cadmium, tellurium).
CdTe elements 1 are arranged in an array on a sapphire substrate 2, electrodes 3 and a common electrode 4 are provided on both sides of a light receiving portion 6 of this HgCdTe element, and gold wires 5 are connected to these electrodes, When infrared rays are received by the light receiving section 6 at the center of the element, carriers are generated and are sensed.

第３図はこのような赤外線検知装置の従来の断面図を部
分拡大して示したもので、第３図において第２図で説明
した記号の他の11はHgCdTe層,12はIn（インジウム）電
極膜,13は酸化膜,14はZnS（硫化亜鉛）膜である。赤外
線はZnS膜，酸化膜を透過してHgCdTe層11で受光しキャ
リアが発生する。酸化膜13はキャリアの再結合を防ぐた
めに設けられている膜である。FIG. 3 is a partially enlarged view of a conventional cross-sectional view of such an infrared detector. In FIG. 3, the other 11 of the symbols explained in FIG. 2 are HgCdTe layers, and 12 is In (indium). The electrode film, 13 is an oxide film, and 14 is a ZnS (zinc sulfide) film. Infrared rays pass through the ZnS film and oxide film and are received by the HgCdTe layer 11 to generate carriers. The oxide film 13 is a film provided to prevent recombination of carriers.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

ところで、上記のHgCdTe素子はコンタクトに電極として
In電極膜を用いており、このIn電極膜がボンディングパ
ッドとなつて金ワイヤー５がボンディングされる。By the way, the above HgCdTe element is used as an electrode for the contact.
An In electrode film is used, and the In electrode film serves as a bonding pad to bond the gold wire 5.

このInはHgCdTe層への密着性が良く、且つ、ボンディン
グワイヤーである金と合金をつくつてボンディング強度
も優れた材料である。This In is a material that has good adhesion to the HgCdTe layer and also has excellent bonding strength by forming an alloy with gold that is a bonding wire.

しかし、InはHgCdTe結晶への拡散係数が大きいために結
晶内にInが入り込んで、Inの真空蒸着時に基板加熱（約
100℃）によつて拡散したり、また、赤外検知装置を使
用して長時間を経過すると拡散が進行して、ノイズが増
えて素子特性が変化すると云う問題がある。However, since In has a large diffusion coefficient into the HgCdTe crystal, In penetrates into the crystal and the substrate is heated (approximately
However, there is a problem that diffusion occurs at 100 ° C., or diffusion progresses after a long time using an infrared detection device, noise increases, and element characteristics change.

本発明はそのような電極膜による素子特性の変化を抑制
することを目的とした赤外検知装置の構成を提案するも
のである。The present invention proposes a configuration of an infrared detection device aiming at suppressing a change in element characteristics due to such an electrode film.

〔課題を解決するための手段〕[Means for Solving the Problems]

その課題は、HgCdTe結晶素子上にNi（ニッケル）膜から
なるHgCdTe結晶コンタクト膜が設けられている赤外検知
装置、また、そのHgCdTe結晶コンタクト膜上にボンディ
ングワイヤーのコンタクト膜を積層した電極膜が設けら
れている赤外検知装置によつて解決される。The challenge is to use an infrared detector that has an HgCdTe crystal contact film made of a Ni (nickel) film on a HgCdTe crystal element, and an electrode film that has a bonding wire contact film laminated on the HgCdTe crystal contact film. It is solved by the infrared detection device provided.

〔作用〕[Action]

即ち、本発明は、HgCdTe結晶に拡散し難いHgCdTe結晶コ
ンタクト膜としてNiを用い、その上にボンディングワイ
ヤーとのコンタクト性の良い膜を積層した電極膜に構成
する。That is, according to the present invention, Ni is used as the HgCdTe crystal contact film that hardly diffuses into the HgCdTe crystal, and an electrode film is formed by laminating a film having a good contact property with the bonding wire thereon.

そうすれば、素子特性を変化させることなく、ボンディ
ングワイヤーとのコンタクト強度の強い電極膜が得られ
て、赤外検知器の品質が向上する。Then, an electrode film having a high contact strength with the bonding wire can be obtained without changing the element characteristics, and the quality of the infrared detector is improved.

〔実施例〕〔Example〕

以下、図面を参照して実施例によつて詳細に説明する。 Hereinafter, embodiments will be described in detail with reference to the drawings.

第１図は本発明にかかるHgCdTe素子の断面図を示してお
り、２はサファイヤ基板,5は金ワイヤー,11はHgCdTe層,
13は酸化膜,14はZnS膜,21はNi膜（膜厚500Å）,22はIn
膜（膜厚１μｍ）である。即ち、本発明にかかる赤外検
知装置のHgCdTe素子にはNi膜21,In膜22を積層した電極
膜の構造となつており、Ni膜21はHgCdTe結晶とのコンタ
クト膜,In膜22は金ワイヤーとのコンタクト膜である。FIG. 1 is a sectional view of an HgCdTe element according to the present invention, 2 is a sapphire substrate, 5 is a gold wire, 11 is a HgCdTe layer,
13 is an oxide film, 14 is a ZnS film, 21 is a Ni film (film thickness 500Å), 22 is In
It is a film (film thickness 1 μm). That is, the HgCdTe element of the infrared detection device according to the present invention has a structure of an electrode film in which a Ni film 21 and an In film 22 are laminated, the Ni film 21 is a contact film with a HgCdTe crystal, and the In film 22 is gold. It is a contact film with the wire.

その形成方法はHgCdTe結晶11表面に酸化膜13を形成し、
この酸化膜13をレジスト膜をマスクとしてエッチングし
てパターンニングした後、そのレジスト膜を残存したま
ま上記のNi膜21,In膜22からなる電極膜を被着して、リ
フトオフ法によつてパターンニングする方法が採られ
る。The formation method is to form an oxide film 13 on the surface of the HgCdTe crystal 11,
After patterning by etching this oxide film 13 using a resist film as a mask, an electrode film consisting of the Ni film 21 and In film 22 is deposited with the resist film remaining, and a pattern is formed by a lift-off method. The method of training is adopted.

このように構成すれば、Ni膜21はHgCdTe結晶とのコンタ
クト性が良く、且つ、高温で安定で、HgCdTe結晶に拡散
し難い。また、In膜22は金ワイヤーとのコンタクト性が
良く、Ni膜とのコンタクト性も良い。従って、このよう
な二層の電極膜はHgCdTe結晶とのコンタクトが良く、金
ワイヤーとのコンタクトも良くて、素子特性の安定した
赤外検知装置がえられる。With this structure, the Ni film 21 has good contact properties with the HgCdTe crystal, is stable at high temperature, and is difficult to diffuse into the HgCdTe crystal. Further, the In film 22 has good contact properties with the gold wire and also has good contact properties with the Ni film. Therefore, such a two-layer electrode film has a good contact with the HgCdTe crystal and a good contact with the gold wire, and an infrared detection device having stable element characteristics can be obtained.

上記例のように、本発明はHgCdTe結晶とのコンタクト性
が良く、HgCdTe結晶に拡散し難いNiコンタクト膜を介在
させることを特徴としており、ワイヤーとのコンタクト
膜は必ずしもIn膜22を用いる必要がなく、他の材料膜、
例えばCr（クロム）膜でもよい。また、金ワイヤーの代
わりにアルミニウムワイヤーを使用すれば、当然、ワイ
ヤーとのコンタクト膜は他の材料膜が必要になり、本発
明はワイヤーコンタクト膜を限定するものではない。As in the above example, the present invention has a good contact property with the HgCdTe crystal, and is characterized by interposing a Ni contact film that is difficult to diffuse into the HgCdTe crystal, and the contact film with the wire does not necessarily need to use the In film 22. Without other material films,
For example, a Cr (chrome) film may be used. Further, if an aluminum wire is used instead of the gold wire, the contact film with the wire naturally requires another material film, and the present invention does not limit the wire contact film.

〔発明の効果〕〔The invention's effect〕

以上の説明から明らかなように、本発明によれば検知器
の特性変動が抑制されて、しかも、ワイヤーの接続性が
良いために、振動の多い飛行機や宇宙開発に搭載する赤
外検知装置の高品質化に著しく効果のあるものである。As is clear from the above description, according to the present invention, fluctuations in the characteristics of the detector are suppressed, and since the wire connectivity is good, the infrared detection device mounted on an airplane or in space development with many vibrations It is extremely effective in improving the quality.

【図面の簡単な説明】[Brief description of drawings]

第１図は本発明にかかるHgCdTe素子の断面図、 第２図は光伝導型多素子赤外検知装置の平面図、 第３図は従来のHgCdTe素子の断面図である。 図において、 １はHgCdTe素子、２はサファイヤ基板、５は金ワイヤ
ー、11はHgCdTe層、13は酸化膜、14はZnS膜、21はNi膜
（HgCdTe結晶とのコンタクト膜）、22はIn膜（金ワイヤ
ーとのコンタクト膜） を示している。FIG. 1 is a sectional view of an HgCdTe element according to the present invention, FIG. 2 is a plan view of a photoconductive multi-element infrared detector, and FIG. 3 is a sectional view of a conventional HgCdTe element. In the figure, 1 is a HgCdTe element, 2 is a sapphire substrate, 5 is a gold wire, 11 is a HgCdTe layer, 13 is an oxide film, 14 is a ZnS film, 21 is a Ni film (contact film with a HgCdTe crystal), and 22 is an In film. (Contact film with gold wire) is shown.

フロントページの続き (72)発明者 田中 昌弘 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 上田 敏之 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 谷川 邦広 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (72)発明者 瀧川 宏 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭61−279177（ＪＰ，Ａ)Front Page Continuation (72) Inventor Masahiro Tanaka 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Toshiyuki Ueda 1015, Kamedotachu, Nakahara-ku, Kawasaki, Kanagawa Prefecture (72) Invention Kunihiro Tanigawa 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Within Fujitsu Limited (72) Inventor Hiroshi Takigawa 1015, Kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa Within Fujitsu Limited (56) Reference JP 61-279177 ( JP, A)

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】HgCdTe結晶素子上にNi（ニッケル）からな
るHgCdTe結晶コンタクト膜が設けられてなることを特徴
とする赤外検知装置。1. An infrared detector comprising a HgCdTe crystal contact film made of Ni (nickel) provided on a HgCdTe crystal element. 【請求項２】前記HgCdTe結晶コンタクト膜上にボンディ
ングワイヤー用のコンタクト膜が設けられてなることを
特徴とする請求項（１）記載の赤外検知装置。2. The infrared detector according to claim 1, wherein a contact film for a bonding wire is provided on the HgCdTe crystal contact film.
JP63231237A 1988-09-13 1988-09-13 Infrared detector Expired - Fee Related JPH077779B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63231237A JPH077779B2 (en) 1988-09-13 1988-09-13 Infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63231237A JPH077779B2 (en) 1988-09-13 1988-09-13 Infrared detector

Publications (2)

Publication Number Publication Date
JPH0278240A JPH0278240A (en) 1990-03-19
JPH077779B2 true JPH077779B2 (en) 1995-01-30

Family

ID=16920469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63231237A Expired - Fee Related JPH077779B2 (en) 1988-09-13 1988-09-13 Infrared detector

Country Status (1)

Country Link
JP (1) JPH077779B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030056676A (en) * 2001-12-28 2003-07-04 주식회사 케이이씨 infrared detector and method of fabricating the same
WO2020157029A1 (en) * 2019-01-29 2020-08-06 Trinamix Gmbh Optical detector

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61279177A (en) * 1985-06-05 1986-12-09 Mitsubishi Electric Corp Photoconduction type infrared ray detecting element

Also Published As

Publication number Publication date
JPH0278240A (en) 1990-03-19

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