JPH0781925A - Silicon dioxide coating film producing device - Google Patents
Silicon dioxide coating film producing deviceInfo
- Publication number
- JPH0781925A JPH0781925A JP25235293A JP25235293A JPH0781925A JP H0781925 A JPH0781925 A JP H0781925A JP 25235293 A JP25235293 A JP 25235293A JP 25235293 A JP25235293 A JP 25235293A JP H0781925 A JPH0781925 A JP H0781925A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- silicon dioxide
- processing
- soln
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 76
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 38
- 239000011248 coating agent Substances 0.000 title abstract description 4
- 238000000576 coating method Methods 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000001914 filtration Methods 0.000 claims abstract description 9
- 239000002253 acid Substances 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 71
- 239000011149 active material Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 239000012190 activator Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 3
- 239000004327 boric acid Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemically Coating (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、二酸化珪素被膜の製造
装置に係り、特に半導体製造工程や液晶表示装置等の電
子部品製造工程で、半導体ウエハ或いはガラス基板等の
被処理基板上に二酸化珪素被膜を液相より生成する二酸
化珪素被膜の製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon dioxide coating manufacturing apparatus, and more particularly, to a silicon wafer on a substrate to be processed such as a semiconductor wafer or a glass substrate in a semiconductor manufacturing process or a manufacturing process of electronic parts such as a liquid crystal display device. The present invention relates to an apparatus for producing a silicon dioxide film that produces a film from a liquid phase.
【０００２】[0002]
【従来の技術】係る二酸化珪素被膜の液相成膜法（ＬＰ
Ｄ法）は、室温近傍での温度で成膜が可能であり、サブ
ミクロンレベルの表面凹凸でも追随性良く、均一な厚み
の欠陥の少ない被膜が得られるため、近年その実用化が
検討されている。この二酸化珪素被膜の液相成膜法は、
例えば特開昭６０−３３２３３号公報、特開昭６２−２
０８７６号公報等により提案されている。2. Description of the Related Art A liquid phase film forming method (LP
Since the method D) can form a film at a temperature near room temperature and has a good followability even on a submicron level surface irregularity, a film with a uniform thickness and few defects can be obtained. There is. The liquid phase film forming method of this silicon dioxide film is
For example, JP-A-60-33233 and JP-A-62-2
It is proposed by Japanese Patent Publication No. 0876.
【０００３】図２は、従来の液相成膜法による二酸化珪
素被膜の製造装置の装置構成を示す説明図である。処理
槽１には、被処理基板３である半導体基板又はガラス基
板が装填され、二酸化珪素の過飽和状態となった珪弗化
水素酸溶液を含む処理液２に浸漬され、基板３の表面に
は、二酸化珪素被膜が析出される。処理液調整槽４で
は、処理液２の二酸化珪素の過飽和状態を維持するため
に、アルミ、ホウ酸などの活性材７を溶解させる。FIG. 2 is an explanatory view showing a device configuration of a conventional device for producing a silicon dioxide film by a liquid phase film forming method. The processing tank 1 is loaded with a semiconductor substrate or a glass substrate which is the substrate 3 to be processed, and is immersed in a processing liquid 2 containing a hydrosilicofluoric acid solution in a supersaturated state of silicon dioxide. , A silicon dioxide film is deposited. In the treatment liquid adjusting tank 4, in order to maintain the supersaturated state of the silicon dioxide of the treatment liquid 2, the active material 7 such as aluminum or boric acid is dissolved.
【０００４】二酸化珪素を過飽和状態に含む処理液に被
処理基板である例えば半導体ウエハを浸漬し、その表面
に二酸化珪素被膜を形成する場合、処理液中で析出する
二酸化珪素等の粒子（ダスト）がウエハ表面に付着し、
半導体装置の歩止まりを下げてしまうことがしばしばあ
る。そこで処理液２中の二酸化珪素等の粒子（ダスト）
を除去するため、循環手段５と、濾過手段６を設け、処
理液を循環濾過することが行われている。循環手段とし
ては脈動が無く、濾過に悪影響を与えない、又循環流量
が比較的多くとれるポンプが使用されている。濾過手段
としては孔径０．０５〜１μｍ程度のフィルタが用いら
れる。When a substrate to be processed, for example, a semiconductor wafer is immersed in a processing solution containing silicon dioxide in a supersaturated state and a silicon dioxide film is formed on the surface thereof, particles (dust) of silicon dioxide or the like precipitated in the processing solution. Adheres to the wafer surface,
The yield of semiconductor devices is often reduced. Therefore, particles such as silicon dioxide (dust) in the processing liquid 2
In order to remove the above, the circulation means 5 and the filtration means 6 are provided to circulate and filter the treatment liquid. As a circulation means, a pump is used which has no pulsation, does not adversely affect filtration, and has a relatively large circulation flow rate. A filter having a pore size of about 0.05 to 1 μm is used as the filtering means.
【０００５】処理槽１と処理液調整槽４とは、相隣接し
て一体的に配置され処理装置１０を構成している。ポン
プ５で圧送された処理液２は処理槽１で被処理基板３表
面に二酸化珪素被膜を析出させ、処理槽１からオーバフ
ローして隣接して配置された処理液調整槽４に流入す
る。処理液調整槽４では、活性材７を溶解させながら、
処理液２は上方から下方に流れ、循環手段５のポンプに
より吸い込まれる。更にポンプ５により圧送されフィル
タ６で濾過され再び処理槽１に処理液２は循環する。The processing tank 1 and the processing liquid adjusting tank 4 are integrally arranged adjacent to each other to form a processing apparatus 10. The processing liquid 2 pumped by the pump 5 deposits a silicon dioxide film on the surface of the substrate 3 to be processed in the processing tank 1, overflows from the processing tank 1 and flows into the processing liquid adjusting tank 4 arranged adjacently thereto. In the treatment liquid adjusting tank 4, while dissolving the active material 7,
The treatment liquid 2 flows from the upper side to the lower side and is sucked by the pump of the circulation means 5. Further, the treatment liquid 2 is circulated in the treatment tank 1 again by being pumped by the pump 5 and filtered by the filter 6.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら処理液調
整槽４では、アルミ、ホウ酸等の活性材７の溶解に伴
い、水素ガス等の気体が大量に発生する。この気体は気
泡となり、一部は上昇して液面から離脱するが、一部は
処理液調整槽４内を上方から下方に流れる処理液２の流
れにより、調整槽４から流出する。更に、処理液２の循
環に伴って、循環賂８の配管内、ポンプ５、フィルタ６
を通り、処理槽１内に流れ込む。成膜中の被処理基板３
に気泡が付着すると、二酸化珪素被膜の欠陥となり、被
処理基板３上に形成する半導体デバイス等の不良率を高
めることとなる。However, in the treatment liquid adjusting tank 4, a large amount of gas such as hydrogen gas is generated as the active material 7 such as aluminum and boric acid is dissolved. This gas becomes bubbles and partly rises and separates from the liquid surface, but partly flows out from the adjusting tank 4 by the flow of the processing liquid 2 flowing from the upper side to the lower side in the processing liquid adjusting tank 4. Further, as the treatment liquid 2 circulates, the inside of the piping of the circulation case 8, the pump 5, the filter 6
And flows into the processing tank 1. Substrate 3 to be processed during film formation
If air bubbles adhere to the silicon dioxide film, the silicon dioxide film becomes defective, and the defect rate of semiconductor devices and the like formed on the substrate 3 to be processed is increased.
【０００７】処理液の循環賂８には、濾過手段であるフ
ィルタ６が備えられ、フィルタ６である程度の大きさの
気泡が分離されるものと考えられる。しかしながら、フ
ィルタの孔径以下の大きさの気泡は、フィルタ６を通過
し、処理槽１内の被処理基板３に付着したり、或いは循
環賂８の配管内または処理槽１の内壁に付着する。配管
内或いは処理槽１内に付着した気泡の周辺には、二酸化
珪素の粒子が折出し、これが成長して粒子層となる。気
泡が配管内壁或いは槽内壁から剥離するときに、配管内
壁或いは槽内壁に付着している二酸化珪素の粒子層を剥
離し処理液内にばらまくこととなり、いわゆる処理液中
のダストとなる。二酸化珪素の粒子（ダスト）が被処理
基板に付着すると被処理基板の成膜に欠陥を生じさせる
こととなる。It is considered that the circulation tub 8 of the treatment liquid is provided with a filter 6 which is a filtering means, and bubbles of a certain size are separated by the filter 6. However, bubbles having a size equal to or smaller than the pore diameter of the filter pass through the filter 6 and adhere to the substrate 3 to be processed in the processing tank 1, or adhere to the inside of the piping of the circulation container 8 or the inner wall of the processing tank 1. Particles of silicon dioxide are projected around the bubbles adhering to the inside of the pipe or the processing tank 1, and these particles grow to form a particle layer. When the bubbles are separated from the inner wall of the pipe or the inner wall of the tank, the particle layer of silicon dioxide adhering to the inner wall of the pipe or the inner wall of the tank is separated and scattered in the treatment liquid, which is so-called dust in the treatment liquid. If particles (dust) of silicon dioxide adhere to the substrate to be processed, defects will occur in the film formation on the substrate to be processed.
【０００８】本発明は、係る従来技術の問題点に鑑みて
為されたものであり、処理液調整槽において発生する気
泡が処理液調整槽から循環して処理槽に流入することを
防止し、良質な二酸化珪素被膜を成膜することのできる
二酸化珪素被膜の製造装置を提供することを目的とす
る。The present invention has been made in view of the problems of the prior art, and prevents bubbles generated in the processing liquid adjusting tank from circulating from the processing liquid adjusting tank and flowing into the processing tank. An object of the present invention is to provide a silicon dioxide film manufacturing apparatus capable of forming a high-quality silicon dioxide film.
【０００９】[0009]
【課題を解決するための手段】本発明の二酸化珪素被膜
の製造装置は、二酸化珪素の過飽和状態となった珪弗化
水素酸溶液を含む処理液と、該処理液を被処理基板と接
触させて該基板表面に二酸化珪素被膜を析出させる処理
槽と、前記処理液の二酸化珪素の過飽和状態を維持する
ために活性材を溶解させる処理液調整槽と、前記処理液
を前記処理槽と前記処理液調整槽に循環させる循環手段
と、該処理液の循環路に配置された濾過手段とを備えた
二酸化珪素被膜の製造装置において、相隣接して一体的
に構成された前記処理槽と前記処理液調整槽間にバッフ
ルプレートを配置し、前記処理槽をオーバフローした処
理液は該バッフルプレートにより仕切られた前記処理液
調整槽内を下方から上方に流れ、該処理液調整槽をオー
バフローして循環するように構成されたことを特徴とす
る。SUMMARY OF THE INVENTION An apparatus for producing a silicon dioxide film according to the present invention comprises a treatment liquid containing a hydrosilicofluoric acid solution in which silicon dioxide is supersaturated, and the treatment liquid being brought into contact with a substrate to be treated. Processing tank for depositing a silicon dioxide film on the surface of the substrate, a processing solution adjusting tank for dissolving an active material to maintain a supersaturated state of the silicon dioxide of the processing solution, the processing solution, and the processing tank In the apparatus for producing a silicon dioxide film, which comprises a circulating means for circulating the solution adjusting tank and a filtering means arranged in a circulating path of the processing solution, the processing tank and the processing integrally formed adjacent to each other. A baffle plate is arranged between the solution adjusting tanks, and the processing solution overflowing the processing tank flows upward from below in the processing solution adjusting tank partitioned by the baffle plate and circulates by overflowing the processing solution adjusting tank. Characterized in that configured so that.
【００１０】[0010]
【作用】処理槽をオーバフローした処理液は、バッフル
プレートにより仕切られた処理液調整槽内を下方から上
方へ流れ、処理液調整槽をオーバフローする。活性材の
溶解に伴い発生する気泡は、上方に浮上し、処理液も下
方から上方に流れる。即ち、気泡の流れと処理液の流れ
が一致し、気泡は処理液調整槽を処理液がオーバフロー
する際に、処理液上面の空間に離脱する。したがって、
処理液が処理液調整槽４をオーバフローする際に活性材
の溶解にともなう気泡が分離され、調整槽から流出する
処理液中に溶存する気泡量を大幅に低減することができ
る。The processing liquid overflowing the processing tank flows from the lower side to the upper side in the processing liquid adjusting tank partitioned by the baffle plate, and overflows the processing liquid adjusting tank. The bubbles generated by the dissolution of the active material float upward, and the treatment liquid also flows upward from below. That is, the flow of the bubbles and the flow of the processing liquid coincide with each other, and when the processing liquid overflows the processing liquid adjusting tank, the bubbles are separated into the space above the processing liquid. Therefore,
When the treatment liquid overflows the treatment liquid adjusting tank 4, the bubbles accompanying the dissolution of the active material are separated, and the amount of bubbles dissolved in the treatment liquid flowing out of the adjusting tank can be greatly reduced.
【００１１】[0011]
【実施例】以下、本発明の一実施例を添付図１を参照し
ながら説明する。本実施例においては、被処理基板３に
成膜する処理槽１、循環手段５及び濾過手段６等の基本
的な構成は、図２に示す従来の技術と同様であり、同一
又は相当の構成要素には同一の符号を付してその説明を
省略する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the attached FIG. In this embodiment, the basic structure of the processing tank 1, the circulation means 5, the filtration means 6, etc. for forming a film on the substrate 3 to be processed is the same as the conventional technique shown in FIG. The same reference numerals are given to the elements and the description thereof will be omitted.
【００１２】処理槽１と処理液調整槽４とが相隣接して
一体的に構成されている処理装置１０において、処理液
調整槽４を仕切る底部が開口した隔壁であるバッフルプ
レート１１が配置されている。このため、処理槽１をオ
ーバフローした処理液２は、バッフルプレート１１と処
理槽１の側部隔壁１ｂとから構成される流路１２に自然
落下して、処理槽下部流路１３から多孔板１４を介して
処理液調整槽４に流入する。バッフルプレート１１で仕
切られた処理液調整槽４では、処理液は下方から上方に
流れる。処理液調整槽４内では、処理液に活性材７が溶
解され、処理液の二酸化珪素の過飽和状態が高められ
る。アルミ、ホウ酸等の活性材７が処理液２に溶解する
際に、水素等のガスを発生し多量の気泡が発生し、気泡
は上方に浮上する。処理液２は、処理液調整槽４の上縁
部４ａをオーバフローし、自然落下して流路１５を通
り、循環賂８の配管を通って、循環手段５により処理槽
１に循環される。In a processing apparatus 10 in which the processing tank 1 and the processing liquid adjusting tank 4 are adjacently integrated with each other, a baffle plate 11 which is a partition having an open bottom for partitioning the processing liquid adjusting tank 4 is arranged. ing. Therefore, the processing liquid 2 that overflows the processing tank 1 naturally drops into the flow path 12 constituted by the baffle plate 11 and the side partition wall 1b of the processing tank 1, and flows from the lower processing tank flow path 13 to the perforated plate 14. And flows into the processing liquid adjusting tank 4 via. In the processing liquid adjusting tank 4 partitioned by the baffle plate 11, the processing liquid flows from the lower side to the upper side. In the treatment liquid adjusting tank 4, the active material 7 is dissolved in the treatment liquid, and the supersaturated state of silicon dioxide in the treatment liquid is enhanced. When the active material 7 such as aluminum or boric acid is dissolved in the treatment liquid 2, a gas such as hydrogen is generated, a large amount of bubbles are generated, and the bubbles float upward. The processing liquid 2 overflows the upper edge portion 4a of the processing liquid adjusting tank 4 and spontaneously drops, passes through the flow path 15, passes through the pipe of the circulation case 8, and is circulated to the processing tank 1 by the circulation means 5.
【００１３】処理液調整槽４では、底部が開口した隔壁
であるバッフルプレート１１により、処理液２は、前述
のように活性材７に沿って下方から上方に流れる。活性
材７が溶解する際に発生する多量のガスも、気泡となっ
て上方に浮上する。従って、処理液の上昇流と気泡の上
昇とが合致し、処理液調整槽４の上面で処理液が上縁部
４ａをオーバフローする際に気泡が解放される。気泡が
解放され分離された後の処理液２は、気泡の含有量が大
幅に減少する。気泡が離脱した処理液は、流路１５を経
て循環路８の配管内を通り、ポンプ５によりフィルタ６
を通って、処理槽１の底部から処理槽１内に圧送され
る。処理槽１で、気泡を含まない処理液は被処理基板３
に良質な二酸化珪素被膜を析出する。In the treatment liquid adjusting tank 4, the treatment liquid 2 flows from the lower side to the upper side along the active material 7 by the baffle plate 11 which is a partition having an open bottom. A large amount of gas generated when the active material 7 is dissolved also becomes bubbles and floats upward. Therefore, the rising flow of the processing liquid and the rising of the bubbles are matched with each other, and the bubbles are released when the processing liquid overflows the upper edge portion 4 a on the upper surface of the processing liquid adjusting tank 4. The content of bubbles in the treatment liquid 2 after the bubbles are released and separated is significantly reduced. The processing liquid from which the air bubbles have separated passes through the flow path 15 and the inside of the pipe of the circulation path 8, and the pump 5 filters
Through the bottom of the processing tank 1 and is pressure fed into the processing tank 1. In the treatment tank 1, the treatment liquid containing no bubbles is treated as the substrate 3 to be treated.
A high-quality silicon dioxide film is deposited on.
【００１４】尚、底部が開口した隔壁であるバッフルプ
レート１１により、処理液は調整槽４内を多孔板１４を
通して下方から上方に流れる。このため、調整槽内の処
理液の流れは、多孔板１４の整流作用により均一な流れ
の層流に近いものとなり、活性材７間を流れながら活性
材７を溶解する。従って調整槽４内において、過飽和度
の局部的な上昇、二酸化珪素粒子の折出という問題を防
止し、過飽和度が均一に高められた処理液を処理槽１に
供給することができる。By the baffle plate 11 which is a partition wall having an open bottom, the treatment liquid flows from the lower side to the upper side through the perforated plate 14 in the adjusting tank 4. Therefore, the flow of the treatment liquid in the adjusting tank becomes close to a uniform laminar flow due to the rectifying action of the porous plate 14, and the active material 7 is dissolved while flowing between the active materials 7. Therefore, in the adjusting tank 4, it is possible to prevent problems such as a local increase in the degree of supersaturation and the protrusion of silicon dioxide particles, and to supply the processing solution having an even higher degree of supersaturation to the processing tank 1.
【００１５】以上に説明したように本発明によれば、処
理液調整槽を処理液がオーバフローする際に、活性材の
溶解にともなって発生する多量の気泡が、調整槽内の処
理液上面で解放される。従って、処理槽内に循環して流
入する処理液は、気泡が含まれず、被処理基板に付着す
る気泡、あるいは気泡に起因する粒子（ダスト）を低減
することができ、良質な二酸化珪素被膜を成膜すること
ができる。As described above, according to the present invention, when the processing liquid overflows the processing liquid adjusting tank, a large amount of bubbles generated by the dissolution of the active material are generated on the upper surface of the processing liquid in the adjusting tank. To be released. Therefore, the processing liquid that circulates and flows into the processing tank does not contain bubbles, and it is possible to reduce bubbles adhering to the substrate to be processed or particles (dust) caused by the bubbles, and to form a high-quality silicon dioxide film. A film can be formed.
【図１】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図。FIG. 1 is an explanatory diagram showing a device configuration of a silicon dioxide film manufacturing apparatus according to an embodiment of the present invention.
【図２】従来の二酸化珪素被膜の製造装置の装置構成を
示す説明図。FIG. 2 is an explanatory diagram showing a device configuration of a conventional silicon dioxide film manufacturing apparatus.
１ 処理槽 ２ 処理液 ３ 被処理基板 ４ 処理液調整槽 ５ 循環手段 ６ 濾過手段 ７ 活性材 １１ バッフルプレート １２，１３，１５ 流路 １４ 多孔板 DESCRIPTION OF SYMBOLS 1 processing tank 2 processing liquid 3 substrate to be processed 4 processing liquid adjusting tank 5 circulating means 6 filtering means 7 active material 11 baffle plate 12, 13, 15 flow path 14 perforated plate
Claims (1)
水素酸溶液を含む処理液と、該処理液を被処理基板と接
触させて該基板表面に二酸化珪素被膜を析出させる処理
槽と、前記処理液の二酸化珪素の過飽和状態を維持する
ために活性材を溶解させる処理液調整槽と、前記処理液
を前記処理槽と前記処理液調整槽に循環させる循環手段
と、該処理液の循環路に配置された濾過手段とを備えた
二酸化珪素被膜の製造装置において、 相隣接して一体的に構成された前記処理槽と前記処理液
調整槽間にバッフルプレートを配置し、前記処理槽をオ
ーバフローした処理液は該バッフルプレートにより仕切
られた前記処理液調整槽内を下方から上方に流れ、該処
理液調整槽をオーバフローして循環するように構成され
たことを特徴とする二酸化珪素被膜の製造装置。1. A treatment solution containing a hydrosilicofluoric acid solution in which silicon dioxide is supersaturated, and a treatment tank for bringing the treatment solution into contact with a substrate to be treated to deposit a silicon dioxide film on the surface of the substrate. A treatment liquid adjusting tank for dissolving an active material in order to maintain the supersaturated state of silicon dioxide in the treatment liquid, a circulation means for circulating the treatment liquid between the treatment tank and the treatment liquid adjusting tank, and circulation of the treatment liquid In a device for producing a silicon dioxide film, which comprises a filtering means arranged in a channel, a baffle plate is arranged between the treatment tank and the treatment liquid adjusting tank which are integrally formed adjacent to each other, and the treatment tank is The overflowed processing liquid flows from the lower side to the upper side in the processing liquid adjusting tank partitioned by the baffle plate and overflows and circulates in the processing liquid adjusting tank. Manufacturing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25235293A JPH0781925A (en) | 1993-09-14 | 1993-09-14 | Silicon dioxide coating film producing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25235293A JPH0781925A (en) | 1993-09-14 | 1993-09-14 | Silicon dioxide coating film producing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0781925A true JPH0781925A (en) | 1995-03-28 |
Family
ID=17236101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25235293A Pending JPH0781925A (en) | 1993-09-14 | 1993-09-14 | Silicon dioxide coating film producing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0781925A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007154081A (en) * | 2005-12-07 | 2007-06-21 | Japan Organo Co Ltd | Functional group introduction reaction column, functional group introduction apparatus, and functional group introduction method |
-
1993
- 1993-09-14 JP JP25235293A patent/JPH0781925A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007154081A (en) * | 2005-12-07 | 2007-06-21 | Japan Organo Co Ltd | Functional group introduction reaction column, functional group introduction apparatus, and functional group introduction method |
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