JPH0784652B2 - Ion plating device - Google Patents
Ion plating deviceInfo
- Publication number
- JPH0784652B2 JPH0784652B2 JP8974386A JP8974386A JPH0784652B2 JP H0784652 B2 JPH0784652 B2 JP H0784652B2 JP 8974386 A JP8974386 A JP 8974386A JP 8974386 A JP8974386 A JP 8974386A JP H0784652 B2 JPH0784652 B2 JP H0784652B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- ion plating
- evaporation
- plating device
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007733 ion plating Methods 0.000 title claims description 12
- 230000008020 evaporation Effects 0.000 claims description 31
- 238000001704 evaporation Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 230000005684 electric field Effects 0.000 claims description 5
- 230000001133 acceleration Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明はイオンプレーティング装置に関し、特に複数の
蒸発源を使用するイオンプレーティング装置に関する。TECHNICAL FIELD The present invention relates to an ion plating apparatus, and more particularly to an ion plating apparatus that uses a plurality of evaporation sources.
［従来の技術］ イオンプレーティング装置は真空室内に蒸発源と被蒸着
基板を対向位置せしめ、上記蒸発源より膜形成物質とし
ての蒸着材を蒸発せしめるとともに、蒸着材を高周波コ
イル等によりイオン化して電界中で加速し、上記基板に
衝突せしめるもので、膜強度の大きい薄膜を精度良く形
成することができる。[Prior Art] An ion plating apparatus positions an evaporation source and a substrate to be vapor-deposited in a vacuum chamber so as to evaporate an evaporation material as a film-forming material from the evaporation source, and ionizes the evaporation material by a high-frequency coil or the like. Since it is accelerated in an electric field and collides with the substrate, a thin film having high film strength can be accurately formed.
かかるイオンプレーティング装置において、１つの蒸発
源の膜形成範囲は限られているため、大型基板の膜形成
には複数の蒸発源を使用し、それぞれに高周波コイルお
よび必要に応じてイオン化促進用の不活性ガス供給管を
設けている。In such an ion plating apparatus, since the film forming range of one evaporation source is limited, a plurality of evaporation sources are used for forming a film on a large substrate, each of which is provided with a high-frequency coil and, if necessary, an ionization accelerating device. An inert gas supply pipe is provided.
［発明が解決しようとする問題点］ ところで、均一な薄膜を形成するには各蒸発源の蒸発速
度はもちろん、蒸着材上記のイオン化度についても各蒸
発源で等しくする必要がある。従来、蒸発速度について
は膜厚モニタの信号フィードバックにより正確な制御が
なされているが、イオン化度については複数の高周波コ
イル間に干渉が生じることにより変動が避けられず、均
一な薄膜を得る上で障害となっていた。また、高周波コ
イル間の干渉はこれに電力を供給する高周波電源の負担
を増す点でも好ましくない。[Problems to be Solved by the Invention] By the way, in order to form a uniform thin film, not only the evaporation rate of each evaporation source but also the above-mentioned ionization degree of the evaporation material needs to be made equal for each evaporation source. Conventionally, the evaporation rate is accurately controlled by the signal feedback of the film thickness monitor, but the ionization degree cannot be changed due to the interference between multiple high frequency coils, and it is necessary to obtain a uniform thin film. It was an obstacle. Further, the interference between the high frequency coils is not preferable in that the burden on the high frequency power supply that supplies electric power to the coils is increased.
本発明はかかる問題点に鑑み、高周波コイル間の干渉を
生じず、したがって各蒸発源において蒸着材蒸気の安定
なイオン化がなされ、大型基板に均一な薄膜を形成する
ことが可能なイオンプレーテイング装置を提供すること
を目的とする。In view of the above problems, the present invention does not cause interference between high frequency coils, and therefore stable vaporization of vapor deposition material is performed in each evaporation source, and an ion plating apparatus capable of forming a uniform thin film on a large substrate. The purpose is to provide.
［問題点を解決するための手段］ 本発明を第１図で説明すると、真空室６内には被蒸着基
板３と複数の蒸発源4A、4Bが対向して設けられ、これら
基板３と蒸発源4A、4B間にそれぞれ高周波コイル2A、2B
が設けてある。電源32は上記基板３と蒸発源4A、4B間に
イオン加速電界を形成している。[Means for Solving Problems] To explain the present invention with reference to FIG. 1, a vapor deposition substrate 3 and a plurality of evaporation sources 4A and 4B are provided in the vacuum chamber 6 so as to face each other. RF coils 2A and 2B between sources 4A and 4B, respectively
Is provided. The power supply 32 forms an ion acceleration electric field between the substrate 3 and the evaporation sources 4A and 4B.
上記各高周波コイル2A、2Bはその外周を筒状の電磁遮蔽
板1A、1Bで覆ってある。The high frequency coils 2A and 2B are covered with cylindrical electromagnetic shield plates 1A and 1B on their outer circumferences.
［作用、効果］ 高周波コイル2A、2Bからは電磁波が放出されてグロー放
電を生じ、該放電中で上記蒸発源4A、4Bより蒸発送出さ
れた蒸着材のイオン化がなされる。各高周波コイル2A、
2Bには上述の如く電磁遮蔽板1A、1Bが設けてあることに
より、遮蔽板1A、1Bの外方へはほとんど電磁波は伝達さ
れず、したがってコイル2A、2B間の相互干渉は生じな
い。[Operations and Effects] Electromagnetic waves are emitted from the high-frequency coils 2A and 2B to generate glow discharge, and during the discharge, the vapor deposition material vaporized and sent out from the vaporization sources 4A and 4B is ionized. Each high frequency coil 2A,
Since the electromagnetic shield plates 1A and 1B are provided on the 2B as described above, almost no electromagnetic waves are transmitted to the outside of the shield plates 1A and 1B, and therefore mutual interference between the coils 2A and 2B does not occur.
これにより、遮蔽板1A、1B内方の各コイル2A、2Bには安
定なグロー放電が得られ、基板３に均一な薄膜を形成す
ることができる。As a result, stable glow discharge can be obtained in the coils 2A and 2B inside the shield plates 1A and 1B, and a uniform thin film can be formed on the substrate 3.
［実施例］ 第１図において、真空室６は排気口61を介して図略の排
気装置に連結され、真空に保たれている。真空室６内に
は頂壁に沿って電界形成用の電極板31が設けてあり、該
電極板31は室外の直流高電圧源32に接続されている。電
極板31の下面には被蒸着基板３が設けてある。上記真空
室６内には底壁上に、上記基板３に向けて蒸着材を蒸発
供給する複数の蒸発源4A、4Bが設けてある。蒸発源4A、
4Bは公知のものであり、その蒸発速度は図略の膜厚モニ
タのフィードバック信号により互いに一致せしめてあ
る。なお、蒸発源4A、4Bの近くにはArとO2の混合ガスを
導入するガス供給管５が設けてあり、真空室６内は１〜
５×10-4Torr程度に保たれている。各蒸発源4A、4Bの上
方には上記基板３との間に高周波コイル2A、2Bが設けて
あり、これらコイル2A、2Bは室外のマッチングボックス
21を介して高周波電源22に接続されている。高周波コイ
ル2A、2Bは高周波グロー放電を生じて、上記蒸発源4A、
4Bより蒸発せしめられる蒸着材（例えばTiO2、SiO2）お
よび導入ガスをイオン化する。イオン化された蒸着材は
電極板31により形成される電界により加速され、基板３
に衝突付着して強固な薄膜を形成する。[Embodiment] In FIG. 1, the vacuum chamber 6 is connected to an exhaust device (not shown) through an exhaust port 61 and is kept in vacuum. An electrode plate 31 for forming an electric field is provided along the top wall in the vacuum chamber 6, and the electrode plate 31 is connected to a DC high voltage source 32 outside the room. The deposition target substrate 3 is provided on the lower surface of the electrode plate 31. Inside the vacuum chamber 6, a plurality of evaporation sources 4A and 4B are provided on the bottom wall for supplying the evaporation material toward the substrate 3 by evaporation. Evaporation source 4A,
4B is a known one, and its evaporation rates are made to coincide with each other by a feedback signal from a film thickness monitor (not shown). A gas supply pipe 5 for introducing a mixed gas of Ar and O 2 is provided near the evaporation sources 4A and 4B, and the inside of the vacuum chamber 6 is
It is kept at around 5 × 10 -4 Torr. High-frequency coils 2A and 2B are provided above the evaporation sources 4A and 4B between the evaporation sources 4A and 4B. The coils 2A and 2B are outdoor matching boxes.
It is connected to a high frequency power source 22 via 21. The high frequency coils 2A, 2B generate high frequency glow discharge, and the evaporation source 4A,
The vapor deposition material (eg, TiO 2 , SiO 2 ) and the introduced gas that are evaporated from 4B are ionized. The ionized vapor deposition material is accelerated by the electric field formed by the electrode plate 31, and the substrate 3
To adhere to and form a strong thin film.
上記各高周波コイル2A、2Bは外周をそれぞれ筒状の電磁
遮蔽板1A、1Bで覆ってある。これを第２図、第３図に示
す。電磁遮蔽板１はSUS等の金属板よりなり、接地線11
（第１図）により真空室壁に接続されてアースされてい
る。高周波コイル２の外周と上記遮へい板１との間隔Ｌ
は1mm〜100mm程度とするのが良い。また、遮へい板１の
筒長D2はコイル長D1の1/2以上とする。The high frequency coils 2A and 2B have outer peripheries covered with cylindrical electromagnetic shield plates 1A and 1B, respectively. This is shown in FIGS. 2 and 3. The electromagnetic shield plate 1 is made of a metal plate such as SUS and has a ground wire 11
(Fig. 1), it is connected to the wall of the vacuum chamber and grounded. Distance L between the outer periphery of the high frequency coil 2 and the shield plate 1
Is about 1 mm to 100 mm. Further, the tube length D 2 of the shield plate 1 is 1/2 or more of the coil length D 1 .
高周波コイル2A、2Bからは電磁波が放出されて上述の如
くグロー放電が生じるが、上記構造の電磁遮蔽板1A、1B
を設けたことにより、該遮蔽板1A、1Bの外方へはほとん
ど電磁波は伝達されず、したがつてコイル2A、2B間の相
互干渉は生じない。これにより、遮蔽板1A、1B内方の各
コイル2A、2Bには安定なグロー放電が得られ、基板３に
均一な薄膜を形成することができる。Electromagnetic waves are emitted from the high frequency coils 2A and 2B to cause glow discharge as described above, but the electromagnetic shielding plates 1A and 1B having the above structure are used.
With the provision of the electromagnetic wave, almost no electromagnetic wave is transmitted to the outside of the shield plates 1A and 1B, and therefore mutual interference between the coils 2A and 2B does not occur. As a result, stable glow discharge can be obtained in the coils 2A and 2B inside the shield plates 1A and 1B, and a uniform thin film can be formed on the substrate 3.
なお、電磁遮蔽板1A、1Bは筒状基体をガラスやセラミッ
クで成形し、その外周に金属膜等の導電膜を形成する構
造としても良い。The electromagnetic shield plates 1A and 1B may have a structure in which a cylindrical substrate is formed of glass or ceramic, and a conductive film such as a metal film is formed on the outer periphery thereof.
この場合、上記筒状基体を第４図、第５図に示す如き二
重筒とすることができる。図において、遮蔽板１の基体
11は内外二重壁の下端部を閉鎖してなり、二重壁間に高
周波コイル２が挿置してある。基体11は例えば石英管で
ある。そして、基体11の外周および底面には導電性の塗
膜12が形成してある。In this case, the tubular base body may be a double cylinder as shown in FIGS. 4 and 5. In the figure, the base of the shield plate 1
Reference numeral 11 is formed by closing the lower ends of the inner and outer double walls, and the high frequency coil 2 is inserted between the double walls. The base 11 is, for example, a quartz tube. A conductive coating film 12 is formed on the outer circumference and bottom surface of the base 11.
かかる構造によつても上記実施例と同様の効果があり、
しかも高周波コイル２の下方が密閉されていることによ
り以下の効果も有する。すなわち、SiO2等の高抵抗物質
を蒸着材とした場合には、これが上記コイル２を通過す
る際に付着し、付着が進行すると往々にして放電を不安
定にする。しかして、下方を密閉した上記基体11内に高
周波コイル２を収納することにより、蒸発源より至る蒸
着材は付着せず、放電を安定に保つことができる。Even with such a structure, the same effect as the above embodiment can be obtained.
Moreover, since the lower part of the high frequency coil 2 is hermetically sealed, the following effects are also obtained. That is, when a high resistance material such as SiO 2 is used as the vapor deposition material, the vapor deposition material adheres when passing through the coil 2, and when the adhesion progresses, the discharge is often unstable. By housing the high-frequency coil 2 in the base 11 whose lower part is hermetically sealed, the vapor deposition material from the evaporation source does not adhere and the discharge can be stably maintained.
なお、高周波コイルの設置数は上記実施例に限られない
ことはもちろんである。Needless to say, the number of high-frequency coils installed is not limited to that in the above embodiment.
第１図ないし第３図は本発明の一実施例を示し、第１図
はイオンプレーティング装置の概略断面側面図、第２図
は電磁遮蔽板の側面図、第３図はその平面図、第４図、
第５図は本発明の他の実施例を示し、第４図は電磁遮蔽
板の断面側面図、第５図はその平面図である。 １、1A、1B……電磁遮蔽板 11……筒状基体、12……導電膜 ２、2A、2B……高周波コイル ３……被蒸着基板、31……電極板 32……高電圧源（電源） 4A、4B……蒸発源 ５……ガス供給管、６……真空室1 to 3 show an embodiment of the present invention. FIG. 1 is a schematic sectional side view of an ion plating device, FIG. 2 is a side view of an electromagnetic shield plate, and FIG. 3 is a plan view thereof. Figure 4,
FIG. 5 shows another embodiment of the present invention, FIG. 4 is a sectional side view of the electromagnetic shielding plate, and FIG. 5 is a plan view thereof. 1, 1A, 1B ... Electromagnetic shield plate 11 ... Cylindrical substrate, 12 ... Conductive film 2, 2A, 2B ... High frequency coil 3 ... Evaporated substrate, 31 ... Electrode plate 32 ... High voltage source ( Power supply) 4A, 4B ... Evaporation source 5 ... Gas supply pipe, 6 ... Vacuum chamber
───────────────────────────────────────────────────── フロントページの続き (72)発明者 長谷川 弘 愛知県豊田市トヨタ町１番地 トヨタ自動 車株式会社内 (72)発明者 清水 達彦 愛知県豊田市トヨタ町１番地 トヨタ自動 車株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Hiroshi Hasegawa 1 Toyota-cho, Toyota-shi, Aichi Toyota Motor Co., Ltd. (72) Inventor Tatsuhiko Shimizu 1 Toyota-cho, Toyota-shi, Aichi Toyota Motor Co., Ltd.
Claims (4)
対向せしめられてこれに蒸着材を蒸発送給する複数の蒸
発源と、各蒸発源と基板間にそれぞれ設けられ蒸着材蒸
気をイオン化せしめる高周波コイルと、上記基板と各蒸
発源間にイオン加速電界を形成する電源とを具備するイ
オンプレーティング装置において、上記各高周波コイル
にはその外周を覆うように筒状の電磁遮蔽板を設けたこ
とを特徴とするイオンプレーティング装置。1. A substrate to be vapor-deposited provided in a vacuum chamber, a plurality of evaporation sources which are opposed to the substrate and vaporize and feed an evaporation material to the substrate, and vapor deposition materials vapor which are respectively provided between the evaporation sources and the substrate. In an ion plating apparatus comprising a high-frequency coil for ionizing a gas, and a power source for forming an ion acceleration electric field between the substrate and each evaporation source, each of the high-frequency coils has a cylindrical electromagnetic shield plate so as to cover the outer periphery thereof. An ion plating device characterized by being provided.
れを定電位に保持した特許請求の範囲第１項記載のイオ
ンプレーティング装置。2. The ion plating device according to claim 1, wherein the electromagnetic shield plate is made of a conductive material and is held at a constant potential.
料で構成し、該基体の外周面に導電膜を形成してこれを
定電位に保持した特許請求の範囲第１項記載のイオンプ
レーティング装置。3. The cylindrical substrate of the electromagnetic shielding plate is made of an electrically insulating material, a conductive film is formed on the outer peripheral surface of the substrate, and the conductive film is held at a constant potential. Ion plating device.
記蒸発源と対向する二重壁の下端を密閉し、二重壁間に
上記高周波コイルを挿置した特許請求の範囲第３項記載
のイオンプレーティング装置。4. The double-walled tubular base body, the lower end of the double-walled wall facing the evaporation source is sealed, and the high-frequency coil is inserted between the double-walled walls. The ion plating device according to the item.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8974386A JPH0784652B2 (en) | 1986-04-18 | 1986-04-18 | Ion plating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8974386A JPH0784652B2 (en) | 1986-04-18 | 1986-04-18 | Ion plating device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62247068A JPS62247068A (en) | 1987-10-28 |
| JPH0784652B2 true JPH0784652B2 (en) | 1995-09-13 |
Family
ID=13979238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8974386A Expired - Lifetime JPH0784652B2 (en) | 1986-04-18 | 1986-04-18 | Ion plating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0784652B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017025554A1 (en) * | 2015-08-13 | 2017-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for the deposition of thin layers |
-
1986
- 1986-04-18 JP JP8974386A patent/JPH0784652B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2017025554A1 (en) * | 2015-08-13 | 2017-02-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for the deposition of thin layers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62247068A (en) | 1987-10-28 |
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